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SIP32436ADN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
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SIP32436BDN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SIP32436BDN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
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SIP32437BDN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32437BDN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
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SIP32440BDN-T1E4 SIP32440BDN-T1E4 Vishay Siliconix sip32440.pdf Description: 2.7V TO 28V, 6A, 3M PROGRAMMABLE
Packaging: Tape & Reel (TR)
Features: Auto Restart, Load Discharge, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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SIP32440BDN-T1E4 SIP32440BDN-T1E4 Vishay Siliconix sip32440.pdf Description: 2.7V TO 28V, 6A, 3M PROGRAMMABLE
Packaging: Cut Tape (CT)
Features: Auto Restart, Load Discharge, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
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SIP32440ADN-T1E4 Vishay Siliconix sip32440.pdf Description: 2.7V TO 28V, 6A, 3M PROGRAMMABLE
Packaging: Tape & Reel (TR)
Features: Latch Function, Load Discharge, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SIP32440ADN-T1E4 Vishay Siliconix sip32440.pdf Description: 2.7V TO 28V, 6A, 3M PROGRAMMABLE
Packaging: Cut Tape (CT)
Features: Latch Function, Load Discharge, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
товару немає в наявності
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SIP32440BEVB Vishay Siliconix sip32440.pdf Description: EVAL BOARD FOR SIP32440
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: SIP32440B
Embedded: No
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SIP32437BEVB Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: SIP32437B EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32437B
Secondary Attributes: On-Board Test Points
Embedded: No
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SIP32436AEVB Vishay Siliconix sic3243x_usermanual.pdf Description: SIP32436A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32436A
Secondary Attributes: On-Board Test Points
Embedded: No
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SIP32433AEVB Vishay Siliconix sip32433.pdf Description: SIP32433 EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32433A
Embedded: No
товару немає в наявності
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SIP32437AEVB Vishay Siliconix sic3243x_usermanual.pdf Description: SIP32437A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32437A
Secondary Attributes: On-Board Test Points
Embedded: No
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SIP32436BEVB Vishay Siliconix sic3243x_usermanual.pdf Description: SIP32436B EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32436B
Secondary Attributes: On-Board Test Points
Embedded: No
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SIP32433BEVB Vishay Siliconix sip32433.pdf Description: SIP32433 EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32433B
Embedded: No
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SIP32440AEVB Vishay Siliconix sip32440.pdf Description: SIP32440A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32440A
Primary Attributes: 3.3V ~ 23V Input Voltage
Secondary Attributes: On-Board Test Points
Embedded: No
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SIHB24N80AE-T1-GE3 SIHB24N80AE-T1-GE3 Vishay Siliconix sihb24n80ae.pdf Description: N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
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SIHB155N60EF-GE3 SIHB155N60EF-GE3 Vishay Siliconix sihb155n60ef.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 159mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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SQ3427CEEV-T1_GE3 SQ3427CEEV-T1_GE3 Vishay Siliconix sq3427ceev.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SQ3427CEEV-T1_GE3 SQ3427CEEV-T1_GE3 Vishay Siliconix sq3427ceev.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Qualification: AEC-Q101
на замовлення 1959 шт:
термін постачання 21-31 дні (днів)
7+46.35 грн
11+27.84 грн
100+17.91 грн
500+12.77 грн
1000+11.47 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
SQJ742EP-T1_GE3 Vishay Siliconix sq4282ey.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 88W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2449pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+35.75 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQJ742EP-T1_GE3 Vishay Siliconix sq4282ey.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 88W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2449pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+129.62 грн
10+79.43 грн
100+53.58 грн
500+39.89 грн
1000+37.22 грн
Мінімальне замовлення: 3 шт
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SQD23N06-31L_T4GE3 SQD23N06-31L_T4GE3 Vishay Siliconix sqd23n06-31l.pdf Description: MOSFET N-CH 60V 23A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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SI2301HDS-T1-GE3 SI2301HDS-T1-GE3 Vishay Siliconix si2301hds.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
товару немає в наявності
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SQ4940CEY-T1_GE3 SQ4940CEY-T1_GE3 Vishay Siliconix sq4940cey_rc_21081.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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SIHW22N65E-GE3 SIHW22N65E-GE3 Vishay Siliconix sihw22n65e.pdf Description: N-CHANNEL 650V
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 480 шт
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SIHL026N65E-GE3 SIHL026N65E-GE3 Vishay Siliconix sihl026n65e.pdf Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9286 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 480 шт
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SIHL026N65E-GE3 SIHL026N65E-GE3 Vishay Siliconix sihl026n65e.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9286 pF @ 100 V
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SIHG026N65E-GE3 SIHG026N65E-GE3 Vishay Siliconix sihg026n65e.pdf Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9286 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 500 шт
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SIHG026N65E-GE3 SIHG026N65E-GE3 Vishay Siliconix sihg026n65e.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9286 pF @ 100 V
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IRF9630 IRF9630 Vishay Siliconix IRF9630%2CSiHF9630.pdf Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товару немає в наявності
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SI2302HDS-T1-GE3 SI2302HDS-T1-GE3 Vishay Siliconix si2302hds.pdf Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
на замовлення 2670 шт:
термін постачання 21-31 дні (днів)
13+25.92 грн
20+15.43 грн
100+9.69 грн
500+6.75 грн
1000+5.99 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
DG419DJ DG419DJ Vishay Siliconix dg417.pdf Description: IC SWITCH SPDT X 1 35OHM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
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SIHH240N60E-T1-FE3 SIHH240N60E-T1-FE3 Vishay Siliconix sihh240n60e-fe3.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+85.83 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIHH240N60E-T1-FE3 SIHH240N60E-T1-FE3 Vishay Siliconix sihh240n60e-fe3.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+273.38 грн
10+172.25 грн
100+120.72 грн
500+93.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SIHF110N65SF-GE3 SIHF110N65SF-GE3 Vishay Siliconix sihf110n65sf.pdf Description: N-CHANNEL 650V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
2+308.73 грн
10+195.55 грн
100+138.09 грн
500+106.58 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SIHP110N65SF-GE3 SIHP110N65SF-GE3 Vishay Siliconix sihp110n65sf.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+314.22 грн
10+199.71 грн
100+141.20 грн
500+113.82 грн
В кошику  од. на суму  грн.
SIHG110N65SF-GE3 SIHG110N65SF-GE3 Vishay Siliconix sihg110n65sf.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
1+340.93 грн
10+217.64 грн
100+154.62 грн
В кошику  од. на суму  грн.
SIHK110N65SF-T1GE3 Vishay Siliconix sihk110n65sf.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2795 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+425.77 грн
10+274.75 грн
100+197.87 грн
500+171.24 грн
В кошику  од. на суму  грн.
SQ9945CEY-T1_GE3 SQ9945CEY-T1_GE3 Vishay Siliconix sq4282ey.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SQ9945CEY-T1_GE3 SQ9945CEY-T1_GE3 Vishay Siliconix sq4282ey.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2470 шт:
термін постачання 21-31 дні (днів)
4+81.70 грн
10+49.40 грн
100+32.53 грн
500+23.71 грн
1000+21.52 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SQJ504EP-T1_BE3 SQJ504EP-T1_BE3 Vishay Siliconix sqj504ep.pdf Description: MOSFET N/P-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+40.16 грн
6000+36.14 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQJ504EP-T1_BE3 SQJ504EP-T1_BE3 Vishay Siliconix sqj504ep.pdf Description: MOSFET N/P-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7637 шт:
термін постачання 21-31 дні (днів)
3+144.54 грн
10+88.88 грн
100+60.03 грн
500+44.75 грн
1000+41.03 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SIHH120N60E-T1-FE3 SIHH120N60E-T1-FE3 Vishay Siliconix sihh120n60e-fe3.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+134.60 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIHH120N60E-T1-FE3 SIHH120N60E-T1-FE3 Vishay Siliconix sihh120n60e-fe3.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+384.14 грн
10+246.61 грн
100+176.42 грн
500+148.88 грн
В кошику  од. на суму  грн.
SIC546CD-T1-GE3 SIC546CD-T1-GE3 Vishay Siliconix sic546.pdf Description: 4 0 A V R P O W E R I N T E
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 24V
Applications: Synchronous Buck Converters
Current - Output / Channel: 40A
Technology: DrMOS
Supplier Device Package: PowerPAK® MLP4535-22L
Load Type: Inductive, Capacitive
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DG408DY DG408DY Vishay Siliconix DG408_DG409.pdf Description: IC MUX 8:1 100OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 1
товару немає в наявності
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SQJQ980EL-T1_GE3 SQJQ980EL-T1_GE3 Vishay Siliconix sqjq980el.pdf Description: MOSFET 2N-CH 80V 36A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3889 шт:
термін постачання 21-31 дні (днів)
2000+78.09 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
SQJQ980EL-T1_GE3 SQJQ980EL-T1_GE3 Vishay Siliconix sqjq980el.pdf Description: MOSFET 2N-CH 80V 36A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3889 шт:
термін постачання 21-31 дні (днів)
2+245.09 грн
10+153.71 грн
100+106.97 грн
500+81.65 грн
1000+80.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SIHB240N65E-GE3 SIHB240N65E-GE3 Vishay Siliconix sihb240n65e.pdf Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+83.98 грн
Мінімальне замовлення: 1000 шт
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SIHB240N65E-GE3 SIHB240N65E-GE3 Vishay Siliconix sihb240n65e.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+245.88 грн
10+154.09 грн
100+107.30 грн
500+81.93 грн
Мінімальне замовлення: 2 шт
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IRFC37N50AB Vishay Siliconix Description: MOSFET N-CHANNEL 500V
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 220 шт
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SIC675ACD-T1-GE3 Vishay Siliconix sic675a.pdf Description: 60A VRPOWER SMART POWERSTAGE MOD
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 30-PowerQFN
Mounting Type: Surface Mount
Interface: PWM
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 25V
Applications: Buck Converters
Current - Output / Channel: 60A
Current - Peak Output: 90A
Technology: NMOS
Supplier Device Package: PowerPAK® MLP30-55L
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+219.17 грн
10+158.03 грн
25+144.79 грн
100+122.26 грн
250+115.77 грн
500+114.04 грн
Мінімальне замовлення: 2 шт
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SIS472ADN-T1-GE3 SIS472ADN-T1-GE3 Vishay Siliconix sis472adn.pdf Description: MOSFET N-CH 30V 24A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+14.22 грн
Мінімальне замовлення: 3000 шт
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SIS472ADN-T1-GE3 SIS472ADN-T1-GE3 Vishay Siliconix sis472adn.pdf Description: MOSFET N-CH 30V 24A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
6+59.70 грн
10+35.71 грн
100+23.12 грн
500+16.59 грн
1000+14.95 грн
Мінімальне замовлення: 6 шт
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SIC450EVB-A Vishay Siliconix sic450_sic451_sic453.pdf Description: SIC450 EVALUATION BOARD
Packaging: Bulk
Voltage - Output: 0.3V ~ 12V
Voltage - Input: 4.5V ~ 20V
Current - Output: 40A
Contents: Board(s)
Frequency - Switching: 1.5MHz
Regulator Topology: Buck
Utilized IC / Part: SiC450
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
товару немає в наявності
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SI7454DP-T1-GE3 SI7454DP-T1-GE3 Vishay Siliconix 71618.pdf Description: MOSFET N-CH 100V 5A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SI7454DP-T1-GE3 SI7454DP-T1-GE3 Vishay Siliconix 71618.pdf Description: MOSFET N-CH 100V 5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
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SIHG050N65SF-GE3 SIHG050N65SF-GE3 Vishay Siliconix sihg050n65sf.pdf Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6369 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+190.95 грн
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
SIP32436ADN-T5E3 sip32435_sip32436_sip32437.pdf
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
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SIP32436BDN-T5E3 sip32435_sip32436_sip32437.pdf
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32436BDN-T5E3 sip32435_sip32436_sip32437.pdf
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
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SIP32437BDN-T5E3 sip32435_sip32436_sip32437.pdf
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32437BDN-T5E3 sip32435_sip32436_sip32437.pdf
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
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SIP32440BDN-T1E4 sip32440.pdf
SIP32440BDN-T1E4
Виробник: Vishay Siliconix
Description: 2.7V TO 28V, 6A, 3M PROGRAMMABLE
Packaging: Tape & Reel (TR)
Features: Auto Restart, Load Discharge, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
товару немає в наявності
Мінімальне замовлення: 2500 шт
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SIP32440BDN-T1E4 sip32440.pdf
SIP32440BDN-T1E4
Виробник: Vishay Siliconix
Description: 2.7V TO 28V, 6A, 3M PROGRAMMABLE
Packaging: Cut Tape (CT)
Features: Auto Restart, Load Discharge, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
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SIP32440ADN-T1E4 sip32440.pdf
Виробник: Vishay Siliconix
Description: 2.7V TO 28V, 6A, 3M PROGRAMMABLE
Packaging: Tape & Reel (TR)
Features: Latch Function, Load Discharge, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
товару немає в наявності
Мінімальне замовлення: 2500 шт
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SIP32440ADN-T1E4 sip32440.pdf
Виробник: Vishay Siliconix
Description: 2.7V TO 28V, 6A, 3M PROGRAMMABLE
Packaging: Cut Tape (CT)
Features: Latch Function, Load Discharge, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
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SIP32440BEVB sip32440.pdf
Виробник: Vishay Siliconix
Description: EVAL BOARD FOR SIP32440
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: SIP32440B
Embedded: No
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SIP32437BEVB sip32435_sip32436_sip32437.pdf
Виробник: Vishay Siliconix
Description: SIP32437B EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32437B
Secondary Attributes: On-Board Test Points
Embedded: No
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SIP32436AEVB sic3243x_usermanual.pdf
Виробник: Vishay Siliconix
Description: SIP32436A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32436A
Secondary Attributes: On-Board Test Points
Embedded: No
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SIP32433AEVB sip32433.pdf
Виробник: Vishay Siliconix
Description: SIP32433 EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32433A
Embedded: No
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SIP32437AEVB sic3243x_usermanual.pdf
Виробник: Vishay Siliconix
Description: SIP32437A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32437A
Secondary Attributes: On-Board Test Points
Embedded: No
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SIP32436BEVB sic3243x_usermanual.pdf
Виробник: Vishay Siliconix
Description: SIP32436B EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32436B
Secondary Attributes: On-Board Test Points
Embedded: No
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SIP32433BEVB sip32433.pdf
Виробник: Vishay Siliconix
Description: SIP32433 EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32433B
Embedded: No
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SIP32440AEVB sip32440.pdf
Виробник: Vishay Siliconix
Description: SIP32440A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32440A
Primary Attributes: 3.3V ~ 23V Input Voltage
Secondary Attributes: On-Board Test Points
Embedded: No
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SIHB24N80AE-T1-GE3 sihb24n80ae.pdf
SIHB24N80AE-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 800 шт
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SIHB155N60EF-GE3 sihb155n60ef.pdf
SIHB155N60EF-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 159mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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SQ3427CEEV-T1_GE3 sq3427ceev.pdf
SQ3427CEEV-T1_GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQ3427CEEV-T1_GE3 sq3427ceev.pdf
SQ3427CEEV-T1_GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Qualification: AEC-Q101
на замовлення 1959 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
7+46.35 грн
11+27.84 грн
100+17.91 грн
500+12.77 грн
1000+11.47 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
SQJ742EP-T1_GE3 sq4282ey.pdf
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 88W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2449pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+35.75 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQJ742EP-T1_GE3 sq4282ey.pdf
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 88W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2449pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+129.62 грн
10+79.43 грн
100+53.58 грн
500+39.89 грн
1000+37.22 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SQD23N06-31L_T4GE3 sqd23n06-31l.pdf
SQD23N06-31L_T4GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 23A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SI2301HDS-T1-GE3 si2301hds.pdf
SI2301HDS-T1-GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SQ4940CEY-T1_GE3 sq4940cey_rc_21081.pdf
SQ4940CEY-T1_GE3
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SIHW22N65E-GE3 sihw22n65e.pdf
SIHW22N65E-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику  од. на суму  грн.
SIHL026N65E-GE3 sihl026n65e.pdf
SIHL026N65E-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9286 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику  од. на суму  грн.
SIHL026N65E-GE3 sihl026n65e.pdf
SIHL026N65E-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9286 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG026N65E-GE3 sihg026n65e.pdf
SIHG026N65E-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9286 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
SIHG026N65E-GE3 sihg026n65e.pdf
SIHG026N65E-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9286 pF @ 100 V
товару немає в наявності
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IRF9630 IRF9630%2CSiHF9630.pdf
IRF9630
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SI2302HDS-T1-GE3 si2302hds.pdf
SI2302HDS-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
на замовлення 2670 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
13+25.92 грн
20+15.43 грн
100+9.69 грн
500+6.75 грн
1000+5.99 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
DG419DJ dg417.pdf
DG419DJ
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 35OHM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
SIHH240N60E-T1-FE3 sihh240n60e-fe3.pdf
SIHH240N60E-T1-FE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+85.83 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIHH240N60E-T1-FE3 sihh240n60e-fe3.pdf
SIHH240N60E-T1-FE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+273.38 грн
10+172.25 грн
100+120.72 грн
500+93.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SIHF110N65SF-GE3 sihf110n65sf.pdf
SIHF110N65SF-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+308.73 грн
10+195.55 грн
100+138.09 грн
500+106.58 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SIHP110N65SF-GE3 sihp110n65sf.pdf
SIHP110N65SF-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+314.22 грн
10+199.71 грн
100+141.20 грн
500+113.82 грн
В кошику  од. на суму  грн.
SIHG110N65SF-GE3 sihg110n65sf.pdf
SIHG110N65SF-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+340.93 грн
10+217.64 грн
100+154.62 грн
В кошику  од. на суму  грн.
SIHK110N65SF-T1GE3 sihk110n65sf.pdf
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2795 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+425.77 грн
10+274.75 грн
100+197.87 грн
500+171.24 грн
В кошику  од. на суму  грн.
SQ9945CEY-T1_GE3 sq4282ey.pdf
SQ9945CEY-T1_GE3
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SQ9945CEY-T1_GE3 sq4282ey.pdf
SQ9945CEY-T1_GE3
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2470 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+81.70 грн
10+49.40 грн
100+32.53 грн
500+23.71 грн
1000+21.52 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SQJ504EP-T1_BE3 sqj504ep.pdf
SQJ504EP-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+40.16 грн
6000+36.14 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQJ504EP-T1_BE3 sqj504ep.pdf
SQJ504EP-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7637 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+144.54 грн
10+88.88 грн
100+60.03 грн
500+44.75 грн
1000+41.03 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SIHH120N60E-T1-FE3 sihh120n60e-fe3.pdf
SIHH120N60E-T1-FE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+134.60 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIHH120N60E-T1-FE3 sihh120n60e-fe3.pdf
SIHH120N60E-T1-FE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+384.14 грн
10+246.61 грн
100+176.42 грн
500+148.88 грн
В кошику  од. на суму  грн.
SIC546CD-T1-GE3 sic546.pdf
SIC546CD-T1-GE3
Виробник: Vishay Siliconix
Description: 4 0 A V R P O W E R I N T E
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 24V
Applications: Synchronous Buck Converters
Current - Output / Channel: 40A
Technology: DrMOS
Supplier Device Package: PowerPAK® MLP4535-22L
Load Type: Inductive, Capacitive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DG408DY DG408_DG409.pdf
DG408DY
Виробник: Vishay Siliconix
Description: IC MUX 8:1 100OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
SQJQ980EL-T1_GE3 sqjq980el.pdf
SQJQ980EL-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 80V 36A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3889 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2000+78.09 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
SQJQ980EL-T1_GE3 sqjq980el.pdf
SQJQ980EL-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 80V 36A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3889 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+245.09 грн
10+153.71 грн
100+106.97 грн
500+81.65 грн
1000+80.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SIHB240N65E-GE3 sihb240n65e.pdf
SIHB240N65E-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1000+83.98 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SIHB240N65E-GE3 sihb240n65e.pdf
SIHB240N65E-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+245.88 грн
10+154.09 грн
100+107.30 грн
500+81.93 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRFC37N50AB
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 500V
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 220 шт
В кошику  од. на суму  грн.
SIC675ACD-T1-GE3 sic675a.pdf
Виробник: Vishay Siliconix
Description: 60A VRPOWER SMART POWERSTAGE MOD
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 30-PowerQFN
Mounting Type: Surface Mount
Interface: PWM
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 25V
Applications: Buck Converters
Current - Output / Channel: 60A
Current - Peak Output: 90A
Technology: NMOS
Supplier Device Package: PowerPAK® MLP30-55L
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+219.17 грн
10+158.03 грн
25+144.79 грн
100+122.26 грн
250+115.77 грн
500+114.04 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SIS472ADN-T1-GE3 sis472adn.pdf
SIS472ADN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 24A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+14.22 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIS472ADN-T1-GE3 sis472adn.pdf
SIS472ADN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 24A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
6+59.70 грн
10+35.71 грн
100+23.12 грн
500+16.59 грн
1000+14.95 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
SIC450EVB-A sic450_sic451_sic453.pdf
Виробник: Vishay Siliconix
Description: SIC450 EVALUATION BOARD
Packaging: Bulk
Voltage - Output: 0.3V ~ 12V
Voltage - Input: 4.5V ~ 20V
Current - Output: 40A
Contents: Board(s)
Frequency - Switching: 1.5MHz
Regulator Topology: Buck
Utilized IC / Part: SiC450
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
товару немає в наявності
В кошику  од. на суму  грн.
SI7454DP-T1-GE3 71618.pdf
SI7454DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SI7454DP-T1-GE3 71618.pdf
SI7454DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG050N65SF-GE3 sihg050n65sf.pdf
SIHG050N65SF-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6369 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
500+190.95 грн
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
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