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SQ4946AEY-T1_BE3 SQ4946AEY-T1_BE3 Vishay Siliconix Description: MOSFET 2N-CH 60V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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IRFR9024PBF-BE3 IRFR9024PBF-BE3 Vishay Siliconix sihfr902.pdf Description: P-CHANNEL 60V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+144.04 грн
10+112.42 грн
100+79.81 грн
500+60.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIC967ED-T1-GE3 SIC967ED-T1-GE3 Vishay Siliconix sic967.pdf Description: 4.5V TO 60V INPUT 6A MICROBRICK
Features: Adjustable Output, Remote On/Off, Remote Sense
Packaging: Tape & Reel (TR)
Package / Case: 54-PowerBFQFN
Size / Dimension: 0.42" L x 0.26" W x 0.12" H (10.6mm x 6.5mm x 3.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 60V
Efficiency: 97%
Current - Output (Max): 6A
Supplier Device Package: PowerPAK® MLP54-A6C
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.8 ~ 15V
Number of Outputs: 1
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SIC967ED-T1-GE3 SIC967ED-T1-GE3 Vishay Siliconix sic967.pdf Description: 4.5V TO 60V INPUT 6A MICROBRICK
Features: Adjustable Output, Remote On/Off, Remote Sense
Packaging: Cut Tape (CT)
Package / Case: 54-PowerBFQFN
Size / Dimension: 0.42" L x 0.26" W x 0.12" H (10.6mm x 6.5mm x 3.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 60V
Efficiency: 97%
Current - Output (Max): 6A
Supplier Device Package: PowerPAK® MLP54-A6C
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.8 ~ 15V
Number of Outputs: 1
на замовлення 928 шт:
термін постачання 21-31 дні (днів)
1+1510.45 грн
10+1041.37 грн
100+820.92 грн
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SIHP186N60EF-GE3 SIHP186N60EF-GE3 Vishay Siliconix sihp186n60ef.pdf Description: MOSFET N-CH 600V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
2+272.17 грн
10+195.88 грн
100+128.51 грн
500+109.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SI1424EDH-T1-BE3 SI1424EDH-T1-BE3 Vishay Siliconix si1424ed.pdf Description: MOSFET N-CH 20V 4A/4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+9.40 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1424EDH-T1-BE3 SI1424EDH-T1-BE3 Vishay Siliconix si1424ed.pdf Description: MOSFET N-CH 20V 4A/4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
8+41.38 грн
13+24.91 грн
100+15.83 грн
500+11.19 грн
1000+10.01 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SI1424EDH-T1-GE3 SI1424EDH-T1-GE3 Vishay Siliconix si1424ed.pdf Description: MOSFET N-CH 20V 4A SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
на замовлення 4024 шт:
термін постачання 21-31 дні (днів)
8+41.38 грн
13+24.91 грн
100+15.83 грн
500+11.19 грн
1000+10.01 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SI1922EDH-T1-BE3 SI1922EDH-T1-BE3 Vishay Siliconix si1922edh.pdf Description: MOSFET 2N-CH 20V 1.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta), 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1922EDH-T1-BE3 SI1922EDH-T1-BE3 Vishay Siliconix si1922edh.pdf Description: MOSFET 2N-CH 20V 1.3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta), 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 4880 шт:
термін постачання 21-31 дні (днів)
7+50.14 грн
11+29.81 грн
100+19.14 грн
500+13.61 грн
1000+12.21 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SQJA76EP-T1_GE3 SQJA76EP-T1_GE3 Vishay Siliconix sqja76ep.pdf Description: MOSFET N-CH 40V 75A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
3+151.20 грн
10+93.34 грн
100+63.02 грн
500+46.98 грн
1000+43.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQJA20EP-T1_BE3 SQJA20EP-T1_BE3 Vishay Siliconix sqja20ep.pdf Description: N-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
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SQJA20EP-T1_BE3 SQJA20EP-T1_BE3 Vishay Siliconix sqja20ep.pdf Description: N-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)
3+152.00 грн
10+93.72 грн
100+63.31 грн
500+47.20 грн
1000+43.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHK100N65E-T1-GE3 SIHK100N65E-T1-GE3 Vishay Siliconix sihk100n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+344.96 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SIHK100N65E-T1-GE3 SIHK100N65E-T1-GE3 Vishay Siliconix sihk100n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+594.47 грн
10+442.64 грн
25+410.23 грн
100+351.63 грн
250+335.72 грн
500+326.13 грн
1000+313.02 грн
В кошику  од. на суму  грн.
IRFD9113 IRFD9113 Vishay Siliconix HRISSD79-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 60V 600MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Supplier Device Package: 4-HVMDIP
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
товару немає в наявності
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IRFD9123 IRFD9123 Vishay Siliconix HRISD017-5-100.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 100V 1A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
товару немає в наявності
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DG180AA Vishay Siliconix DG180%2C181%2C182.pdf Description: IC SW SPST-NCX2 10OHM TO100-10
Packaging: Tube
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 400ns, 200ns
Channel Capacitance (CS(off), CD(off)): 21pF, 17pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
товару немає в наявності
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IRFR9220PBF-BE3 IRFR9220PBF-BE3 Vishay Siliconix sihfr922.pdf Description: P-CHANNEL 200V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+211.69 грн
10+132.04 грн
100+93.45 грн
500+73.88 грн
1000+71.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR220TRPBF-BE3 IRFR220TRPBF-BE3 Vishay Siliconix sihfr220.pdf Description: N-CHANNEL 200V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
3+148.02 грн
10+91.19 грн
100+62.33 грн
500+46.15 грн
1000+43.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR220PBF-BE3 IRFR220PBF-BE3 Vishay Siliconix sihfr220.pdf Description: N-CHANNEL 200V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+132.10 грн
10+88.66 грн
100+61.77 грн
500+46.15 грн
1000+43.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFD210 IRFD210 Vishay Siliconix sihfd210.pdf Description: MOSFET N-CH 200V 600MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
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SQJ464EP-T2_GE3 SQJ464EP-T2_GE3 Vishay Siliconix sqj464ep.pdf Description: MOSFET N-CH 60V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Qualification: AEC-Q101
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SIR580DP-T1-RE3 SIR580DP-T1-RE3 Vishay Siliconix sir580dp.pdf Description: N-CHANNEL 80-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta), 146A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 40 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+56.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR580DP-T1-RE3 SIR580DP-T1-RE3 Vishay Siliconix sir580dp.pdf Description: N-CHANNEL 80-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta), 146A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 40 V
на замовлення 13869 шт:
термін постачання 21-31 дні (днів)
2+159.16 грн
10+108.82 грн
100+81.90 грн
500+61.79 грн
1000+56.95 грн
Мінімальне замовлення: 2
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SIHH100N65E-T1-GE3 SIHH100N65E-T1-GE3 Vishay Siliconix sihh100n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
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SIHH100N65E-T1-GE3 SIHH100N65E-T1-GE3 Vishay Siliconix sihh100n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
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SQ2310CES-T1_GE3 SQ2310CES-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 20V 6A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Qualification: AEC-Q101
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SQ2318CES-T1_GE3 SQ2318CES-T1_GE3 Vishay Siliconix sq2318ces.pdf Description: MOSFET N-CH 40V 8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Qualification: AEC-Q101
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SQ2319CES-T1_GE3 SQ2319CES-T1_GE3 Vishay Siliconix sq2319ces.pdf Description: MOSFET P-CH 40V 4.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Qualification: AEC-Q101
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SI2366DS-T1-BE3 SI2366DS-T1-BE3 Vishay Siliconix si2366ds.pdf Description: N-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.37 грн
6000+9.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI2366DS-T1-BE3 SI2366DS-T1-BE3 Vishay Siliconix si2366ds.pdf Description: N-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
на замовлення 7820 шт:
термін постачання 21-31 дні (днів)
8+39.79 грн
11+28.28 грн
100+20.74 грн
500+14.80 грн
1000+11.82 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRFP150 IRFP150 Vishay Siliconix HRISD017-4-483.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 41A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
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IRFR420PBF-BE3 IRFR420PBF-BE3 Vishay Siliconix sihfr420.pdf Description: N-CHANNEL 500V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+179.85 грн
75+93.79 грн
150+71.35 грн
525+56.54 грн
1050+55.79 грн
Мінімальне замовлення: 2
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SQD100N04_3M6T4GE3 SQD100N04_3M6T4GE3 Vishay Siliconix sqd100n04-3m6.pdf Description: MOSFET N-CH 40V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Qualification: AEC-Q101
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SQS141ELNW-T1_GE3 SQS141ELNW-T1_GE3 Vishay Siliconix sqs141elnw.pdf Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7458 pF @ 25 V
Qualification: AEC-Q101
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SQS141ELNW-T1_GE3 SQS141ELNW-T1_GE3 Vishay Siliconix sqs141elnw.pdf Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7458 pF @ 25 V
Qualification: AEC-Q101
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
3+106.64 грн
10+66.82 грн
100+46.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF820ALPBF IRF820ALPBF Vishay Siliconix sihf820a.pdf Description: MOSFET N-CH 500V 2.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+155.98 грн
10+99.62 грн
100+76.28 грн
500+58.09 грн
1000+53.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF820 IRF820 Vishay Siliconix 91059.pdf description Description: MOSFET N-CH 500V 2.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
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SIJK140E-T1-GE3 SIJK140E-T1-GE3 Vishay Siliconix sijk140e.pdf Description: N-CHANNEL 40 V (D-S) 175 C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Ta), 795A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18510 pF @ 20 V
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SIJK140E-T1-GE3 SIJK140E-T1-GE3 Vishay Siliconix sijk140e.pdf Description: N-CHANNEL 40 V (D-S) 175 C MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Ta), 795A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18510 pF @ 20 V
на замовлення 1365 шт:
термін постачання 21-31 дні (днів)
1+460.77 грн
10+340.41 грн
25+314.53 грн
100+268.53 грн
250+255.82 грн
500+248.16 грн
В кошику  од. на суму  грн.
SQJ126EP-T1_GE3 SQJ126EP-T1_GE3 Vishay Siliconix sqj126ep.pdf Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8095 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJ126EP-T1_GE3 SQJ126EP-T1_GE3 Vishay Siliconix sqj126ep.pdf Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8095 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)
2+187.81 грн
10+116.33 грн
100+79.46 грн
500+59.78 грн
1000+55.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG9232EDQ-T1-GE3 DG9232EDQ-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST-NCX2 25OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
товару немає в наявності
В кошику  од. на суму  грн.
DG9232EDQ-T1-GE3 DG9232EDQ-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST-NCX2 25OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
на замовлення 2342 шт:
термін постачання 21-31 дні (днів)
2+160.75 грн
10+114.57 грн
25+104.50 грн
100+87.62 грн
250+82.64 грн
500+79.64 грн
1000+75.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG9233EDQ-T1-GE3 DG9233EDQ-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST-NOX2 25OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
товару немає в наявності
В кошику  од. на суму  грн.
DG9233EDQ-T1-GE3 DG9233EDQ-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST-NOX2 25OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
на замовлення 1637 шт:
термін постачання 21-31 дні (днів)
2+160.75 грн
10+114.57 грн
25+104.50 грн
100+87.62 грн
250+82.64 грн
500+79.64 грн
1000+75.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHB100N65E-GE3 SIHB100N65E-GE3 Vishay Siliconix sihb100n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
на замовлення 994 шт:
термін постачання 21-31 дні (днів)
1+692.35 грн
10+464.86 грн
100+399.12 грн
500+348.76 грн
В кошику  од. на суму  грн.
SIHP33N60E-GE3 SIHP33N60E-GE3 Vishay Siliconix sihp33n60e.pdf Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
на замовлення 588 шт:
термін постачання 21-31 дні (днів)
1+358.11 грн
50+235.04 грн
100+223.44 грн
500+193.23 грн
В кошику  од. на суму  грн.
SI3473CDV-T1-BE3 SI3473CDV-T1-BE3 Vishay Siliconix si3473cd.pdf Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+20.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI3473CDV-T1-BE3 SI3473CDV-T1-BE3 Vishay Siliconix si3473cd.pdf Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
4+82.76 грн
10+49.81 грн
100+32.63 грн
500+23.69 грн
1000+21.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIR500DP-T1-UE3 SIR500DP-T1-UE3 Vishay Siliconix sir500dp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SIR500DP-T1-UE3 SIR500DP-T1-UE3 Vishay Siliconix sir500dp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
3+132.90 грн
10+93.95 грн
25+85.43 грн
100+71.38 грн
250+67.19 грн
500+64.66 грн
1000+61.56 грн
2500+59.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHD240N65E-GE3 SIHD240N65E-GE3 Vishay Siliconix sihd240n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+275.35 грн
10+200.17 грн
25+183.89 грн
100+155.75 грн
250+147.73 грн
500+142.90 грн
1000+136.64 грн
3000+131.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SISS5810DN-T1-GE3 SISS5810DN-T1-GE3 Vishay Siliconix siss5810dn.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+27.85 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
SISS5810DN-T1-GE3 SISS5810DN-T1-GE3 Vishay Siliconix siss5810dn.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3+113.00 грн
10+68.43 грн
100+45.72 грн
500+33.75 грн
1000+30.80 грн
2000+29.99 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISS588DN-T1-BE3 SISS588DN-T1-BE3 Vishay Siliconix siss588dn.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
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SISS588DN-T1-BE3 SISS588DN-T1-BE3 Vishay Siliconix siss588dn.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
товару немає в наявності
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DG417DY DG417DY Vishay Siliconix dg417.pdf Description: IC SWITCH SPST-NCX1 35OHM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
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DG417DJ DG417DJ Vishay Siliconix dg417.pdf Description: IC SWITCH SPST-NC X 1 35OHM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
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SQ4946AEY-T1_BE3
SQ4946AEY-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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IRFR9024PBF-BE3 sihfr902.pdf
IRFR9024PBF-BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 60V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.04 грн
10+112.42 грн
100+79.81 грн
500+60.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIC967ED-T1-GE3 sic967.pdf
SIC967ED-T1-GE3
Виробник: Vishay Siliconix
Description: 4.5V TO 60V INPUT 6A MICROBRICK
Features: Adjustable Output, Remote On/Off, Remote Sense
Packaging: Tape & Reel (TR)
Package / Case: 54-PowerBFQFN
Size / Dimension: 0.42" L x 0.26" W x 0.12" H (10.6mm x 6.5mm x 3.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 60V
Efficiency: 97%
Current - Output (Max): 6A
Supplier Device Package: PowerPAK® MLP54-A6C
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.8 ~ 15V
Number of Outputs: 1
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SIC967ED-T1-GE3 sic967.pdf
SIC967ED-T1-GE3
Виробник: Vishay Siliconix
Description: 4.5V TO 60V INPUT 6A MICROBRICK
Features: Adjustable Output, Remote On/Off, Remote Sense
Packaging: Cut Tape (CT)
Package / Case: 54-PowerBFQFN
Size / Dimension: 0.42" L x 0.26" W x 0.12" H (10.6mm x 6.5mm x 3.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 60V
Efficiency: 97%
Current - Output (Max): 6A
Supplier Device Package: PowerPAK® MLP54-A6C
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.8 ~ 15V
Number of Outputs: 1
на замовлення 928 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1510.45 грн
10+1041.37 грн
100+820.92 грн
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SIHP186N60EF-GE3 sihp186n60ef.pdf
SIHP186N60EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+272.17 грн
10+195.88 грн
100+128.51 грн
500+109.27 грн
Мінімальне замовлення: 2
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SI1424EDH-T1-BE3 si1424ed.pdf
SI1424EDH-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 4A/4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.40 грн
Мінімальне замовлення: 3000
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SI1424EDH-T1-BE3 si1424ed.pdf
SI1424EDH-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 4A/4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.38 грн
13+24.91 грн
100+15.83 грн
500+11.19 грн
1000+10.01 грн
Мінімальне замовлення: 8
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SI1424EDH-T1-GE3 si1424ed.pdf
SI1424EDH-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 4A SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
на замовлення 4024 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.38 грн
13+24.91 грн
100+15.83 грн
500+11.19 грн
1000+10.01 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SI1922EDH-T1-BE3 si1922edh.pdf
SI1922EDH-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta), 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1922EDH-T1-BE3 si1922edh.pdf
SI1922EDH-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta), 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 4880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.14 грн
11+29.81 грн
100+19.14 грн
500+13.61 грн
1000+12.21 грн
Мінімальне замовлення: 7
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SQJA76EP-T1_GE3 sqja76ep.pdf
SQJA76EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.20 грн
10+93.34 грн
100+63.02 грн
500+46.98 грн
1000+43.06 грн
Мінімальне замовлення: 3
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SQJA20EP-T1_BE3 sqja20ep.pdf
SQJA20EP-T1_BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
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SQJA20EP-T1_BE3 sqja20ep.pdf
SQJA20EP-T1_BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.00 грн
10+93.72 грн
100+63.31 грн
500+47.20 грн
1000+43.27 грн
Мінімальне замовлення: 3
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SIHK100N65E-T1-GE3 sihk100n65e.pdf
SIHK100N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+344.96 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SIHK100N65E-T1-GE3 sihk100n65e.pdf
SIHK100N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+594.47 грн
10+442.64 грн
25+410.23 грн
100+351.63 грн
250+335.72 грн
500+326.13 грн
1000+313.02 грн
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IRFD9113 HRISSD79-1.pdf?t.download=true&u=5oefqw
IRFD9113
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 600MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Supplier Device Package: 4-HVMDIP
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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IRFD9123 HRISD017-5-100.pdf?t.download=true&u=5oefqw
IRFD9123
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 1A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
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DG180AA DG180%2C181%2C182.pdf
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX2 10OHM TO100-10
Packaging: Tube
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 400ns, 200ns
Channel Capacitance (CS(off), CD(off)): 21pF, 17pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
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IRFR9220PBF-BE3 sihfr922.pdf
IRFR9220PBF-BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 200V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+211.69 грн
10+132.04 грн
100+93.45 грн
500+73.88 грн
1000+71.59 грн
Мінімальне замовлення: 2
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IRFR220TRPBF-BE3 sihfr220.pdf
IRFR220TRPBF-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 200V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.02 грн
10+91.19 грн
100+62.33 грн
500+46.15 грн
1000+43.92 грн
Мінімальне замовлення: 3
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IRFR220PBF-BE3 sihfr220.pdf
IRFR220PBF-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 200V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.10 грн
10+88.66 грн
100+61.77 грн
500+46.15 грн
1000+43.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFD210 sihfd210.pdf
IRFD210
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 600MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
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SQJ464EP-T2_GE3 sqj464ep.pdf
SQJ464EP-T2_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Qualification: AEC-Q101
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SIR580DP-T1-RE3 sir580dp.pdf
SIR580DP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta), 146A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 40 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+56.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR580DP-T1-RE3 sir580dp.pdf
SIR580DP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta), 146A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 40 V
на замовлення 13869 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.16 грн
10+108.82 грн
100+81.90 грн
500+61.79 грн
1000+56.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHH100N65E-T1-GE3 sihh100n65e.pdf
SIHH100N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
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SIHH100N65E-T1-GE3 sihh100n65e.pdf
SIHH100N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
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SQ2310CES-T1_GE3
SQ2310CES-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 6A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Qualification: AEC-Q101
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SQ2318CES-T1_GE3 sq2318ces.pdf
SQ2318CES-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Qualification: AEC-Q101
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SQ2319CES-T1_GE3 sq2319ces.pdf
SQ2319CES-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Qualification: AEC-Q101
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SI2366DS-T1-BE3 si2366ds.pdf
SI2366DS-T1-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.37 грн
6000+9.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI2366DS-T1-BE3 si2366ds.pdf
SI2366DS-T1-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
на замовлення 7820 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+39.79 грн
11+28.28 грн
100+20.74 грн
500+14.80 грн
1000+11.82 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRFP150 HRISD017-4-483.pdf?t.download=true&u=5oefqw
IRFP150
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 41A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
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IRFR420PBF-BE3 sihfr420.pdf
IRFR420PBF-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+179.85 грн
75+93.79 грн
150+71.35 грн
525+56.54 грн
1050+55.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQD100N04_3M6T4GE3 sqd100n04-3m6.pdf
SQD100N04_3M6T4GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Qualification: AEC-Q101
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SQS141ELNW-T1_GE3 sqs141elnw.pdf
SQS141ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7458 pF @ 25 V
Qualification: AEC-Q101
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SQS141ELNW-T1_GE3 sqs141elnw.pdf
SQS141ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7458 pF @ 25 V
Qualification: AEC-Q101
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+106.64 грн
10+66.82 грн
100+46.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF820ALPBF sihf820a.pdf
IRF820ALPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+155.98 грн
10+99.62 грн
100+76.28 грн
500+58.09 грн
1000+53.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF820 description 91059.pdf
IRF820
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
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SIJK140E-T1-GE3 sijk140e.pdf
SIJK140E-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175 C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Ta), 795A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18510 pF @ 20 V
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SIJK140E-T1-GE3 sijk140e.pdf
SIJK140E-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175 C MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Ta), 795A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18510 pF @ 20 V
на замовлення 1365 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+460.77 грн
10+340.41 грн
25+314.53 грн
100+268.53 грн
250+255.82 грн
500+248.16 грн
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SQJ126EP-T1_GE3 sqj126ep.pdf
SQJ126EP-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8095 pF @ 25 V
Qualification: AEC-Q101
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SQJ126EP-T1_GE3 sqj126ep.pdf
SQJ126EP-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8095 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+187.81 грн
10+116.33 грн
100+79.46 грн
500+59.78 грн
1000+55.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG9232EDQ-T1-GE3 dg9232e.pdf
DG9232EDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX2 25OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
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DG9232EDQ-T1-GE3 dg9232e.pdf
DG9232EDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX2 25OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
на замовлення 2342 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+160.75 грн
10+114.57 грн
25+104.50 грн
100+87.62 грн
250+82.64 грн
500+79.64 грн
1000+75.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG9233EDQ-T1-GE3 dg9232e.pdf
DG9233EDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 25OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
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DG9233EDQ-T1-GE3 dg9232e.pdf
DG9233EDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 25OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
на замовлення 1637 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+160.75 грн
10+114.57 грн
25+104.50 грн
100+87.62 грн
250+82.64 грн
500+79.64 грн
1000+75.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHB100N65E-GE3 sihb100n65e.pdf
SIHB100N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
на замовлення 994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+692.35 грн
10+464.86 грн
100+399.12 грн
500+348.76 грн
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SIHP33N60E-GE3 sihp33n60e.pdf
SIHP33N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
на замовлення 588 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+358.11 грн
50+235.04 грн
100+223.44 грн
500+193.23 грн
В кошику  од. на суму  грн.
SI3473CDV-T1-BE3 si3473cd.pdf
SI3473CDV-T1-BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+20.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI3473CDV-T1-BE3 si3473cd.pdf
SI3473CDV-T1-BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.76 грн
10+49.81 грн
100+32.63 грн
500+23.69 грн
1000+21.45 грн
Мінімальне замовлення: 4
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SIR500DP-T1-UE3 sir500dp.pdf
SIR500DP-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SIR500DP-T1-UE3 sir500dp.pdf
SIR500DP-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.90 грн
10+93.95 грн
25+85.43 грн
100+71.38 грн
250+67.19 грн
500+64.66 грн
1000+61.56 грн
2500+59.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHD240N65E-GE3 sihd240n65e.pdf
SIHD240N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+275.35 грн
10+200.17 грн
25+183.89 грн
100+155.75 грн
250+147.73 грн
500+142.90 грн
1000+136.64 грн
3000+131.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SISS5810DN-T1-GE3 siss5810dn.pdf
SISS5810DN-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+27.85 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
SISS5810DN-T1-GE3 siss5810dn.pdf
SISS5810DN-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.00 грн
10+68.43 грн
100+45.72 грн
500+33.75 грн
1000+30.80 грн
2000+29.99 грн
Мінімальне замовлення: 3
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SISS588DN-T1-BE3 siss588dn.pdf
SISS588DN-T1-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
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SISS588DN-T1-BE3 siss588dn.pdf
SISS588DN-T1-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
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DG417DY dg417.pdf
DG417DY
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX1 35OHM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
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DG417DJ dg417.pdf
DG417DJ
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NC X 1 35OHM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
товару немає в наявності
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