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SI4936CDY-T1-E3 SI4936CDY-T1-E3 Vishay Siliconix si4936cdy.pdf Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+17.96 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4936CDY-T1-E3 SI4936CDY-T1-E3 Vishay Siliconix si4936cdy.pdf Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
5+71.88 грн
10+42.98 грн
100+28.05 грн
500+20.29 грн
1000+18.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SQ2361CES-T1_GE3 SQ2361CES-T1_GE3 Vishay Siliconix sq2361ces.pdf Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2720 шт:
термін постачання 21-31 дні (днів)
7+49.31 грн
12+29.14 грн
100+18.66 грн
500+13.29 грн
1000+11.93 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF9540 IRF9540 Vishay Siliconix 91078.pdf description Description: MOSFET P-CH 100V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товару немає в наявності
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IRF9520 IRF9520 Vishay Siliconix 91074.pdf Description: MOSFET P-CH 100V 6.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
товару немає в наявності
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SQS181ELNW-T1_GE3 SQS181ELNW-T1_GE3 Vishay Siliconix sqs181elnw.pdf Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11696 шт:
термін постачання 21-31 дні (днів)
3000+31.43 грн
6000+28.73 грн
9000+27.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS181ELNW-T1_GE3 SQS181ELNW-T1_GE3 Vishay Siliconix sqs181elnw.pdf Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11714 шт:
термін постачання 21-31 дні (днів)
3+117.85 грн
10+71.63 грн
100+47.91 грн
500+35.40 грн
1000+32.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIJK5100E-T1-GE3 Vishay Siliconix sijk5100e.pdf Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+267.69 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
SIJK5100E-T1-GE3 Vishay Siliconix sijk5100e.pdf Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+468.89 грн
10+345.52 грн
25+319.17 грн
100+272.35 грн
250+259.38 грн
500+251.57 грн
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IRFL9014TR IRFL9014TR Vishay Siliconix sihfl901.pdf Description: MOSFET P-CH 60V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
товару немає в наявності
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SIRA62DDP-T1-UE3 SIRA62DDP-T1-UE3 Vishay Siliconix sira62ddp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
товару немає в наявності
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SIRA62DDP-T1-UE3 SIRA62DDP-T1-UE3 Vishay Siliconix sira62ddp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
товару немає в наявності
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DG611EEY-T1-GE3 DG611EEY-T1-GE3 Vishay Siliconix Description: IC SW SPST-NCX4 115OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 600mOhm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
товару немає в наявності
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DG611EEQ-T1-GE3 DG611EEQ-T1-GE3 Vishay Siliconix dg611e.pdf Description: IC SW SPST-NCX4 115OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 600mOhm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
товару немає в наявності
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SQJ858AEP-T1_BE3 SQJ858AEP-T1_BE3 Vishay Siliconix sqj858aep.pdf Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
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SQJ858AEP-T1_BE3 SQJ858AEP-T1_BE3 Vishay Siliconix sqj858aep.pdf Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2893 шт:
термін постачання 21-31 дні (днів)
3+137.07 грн
10+83.79 грн
100+56.44 грн
500+41.98 грн
1000+39.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG1408EN-T1-GE4 DG1408EN-T1-GE4 Vishay Siliconix dg1408.pdf Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Number of Circuits: 1
товару немає в наявності
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SIHB125N65E-GE3 SIHB125N65E-GE3 Vishay Siliconix sihb125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+592.59 грн
10+388.82 грн
100+285.71 грн
500+231.59 грн
В кошику  од. на суму  грн.
SIHH125N65E-T1-GE3 SIHH125N65E-T1-GE3 Vishay Siliconix sihh125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+257.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIHH125N65E-T1-GE3 SIHH125N65E-T1-GE3 Vishay Siliconix sihh125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+595.93 грн
10+390.76 грн
100+303.97 грн
В кошику  од. на суму  грн.
SIHK125N65E-T1-GE3 SIHK125N65E-T1-GE3 Vishay Siliconix sihk125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+266.02 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SIHK125N65E-T1-GE3 SIHK125N65E-T1-GE3 Vishay Siliconix sihk125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+610.14 грн
10+400.58 грн
100+313.54 грн
В кошику  од. на суму  грн.
SIHG125N65E-GE3 SIHG125N65E-GE3 Vishay Siliconix sihg125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
1+647.75 грн
10+426.73 грн
100+315.37 грн
В кошику  од. на суму  грн.
SIHFU024-GE3 SIHFU024-GE3 Vishay Siliconix sihfr024.pdf Description: LOGIC MOSFET N-CHANNEL 60V
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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SQS166ELNW-T1_GE3 SQS166ELNW-T1_GE3 Vishay Siliconix sqs166elnw.pdf Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 25 V
товару немає в наявності
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SQS166ELNW-T1_GE3 SQS166ELNW-T1_GE3 Vishay Siliconix sqs166elnw.pdf Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 25 V
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
7+50.98 грн
10+34.93 грн
25+31.26 грн
100+25.66 грн
250+23.89 грн
500+22.83 грн
1000+21.59 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SQS182ELNW-T1_GE3 SQS182ELNW-T1_GE3 Vishay Siliconix sqs182elnw.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2024 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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SQS182ELNW-T1_GE3 SQS182ELNW-T1_GE3 Vishay Siliconix sqs182elnw.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2024 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2736 шт:
термін постачання 21-31 дні (днів)
4+87.76 грн
10+56.18 грн
100+42.25 грн
500+31.61 грн
1000+28.76 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQS120ELNW-T1_GE3 SQS120ELNW-T1_GE3 Vishay Siliconix sqs120elnw.pdf Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+28.93 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS120ELNW-T1_GE3 SQS120ELNW-T1_GE3 Vishay Siliconix sqs120elnw.pdf Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
4+103.64 грн
10+66.32 грн
100+47.89 грн
500+35.34 грн
1000+32.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQS124ELNW-T1_GE3 SQS124ELNW-T1_GE3 Vishay Siliconix sqs124elnw.pdf Description: MOSFET N-CH 30V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 25 V
Qualification: AEC-Q101
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IRF710 IRF710 Vishay Siliconix 91041.pdf description Description: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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IRF520 IRF520 Vishay Siliconix irl620.pdf Description: MOSFET N-CH 100V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
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В кошику  од. на суму  грн.
SIHF9630S-GE3 SIHF9630S-GE3 Vishay Siliconix sihf9630.pdf Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
3+133.73 грн
10+97.95 грн
100+66.81 грн
500+50.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISS26LDN-T1-UE3 SISS26LDN-T1-UE3 Vishay Siliconix siss26ldn.pdf Description: N-CHANNEL 60 V (D-S) 150C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+32.50 грн
6000+29.14 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SISS26LDN-T1-UE3 SISS26LDN-T1-UE3 Vishay Siliconix siss26ldn.pdf Description: N-CHANNEL 60 V (D-S) 150C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3+121.19 грн
10+73.89 грн
100+49.43 грн
500+36.55 грн
1000+33.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF830 IRF830 Vishay Siliconix irl620.pdf description Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
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SIR570DP-T1-BE3 SIR570DP-T1-BE3 Vishay Siliconix sir570dp.pdf Description: N-CHANNEL 150 V (D-S) 175 C MOSF
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77.4A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V
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SIR570DP-T1-BE3 SIR570DP-T1-BE3 Vishay Siliconix sir570dp.pdf Description: N-CHANNEL 150 V (D-S) 175 C MOSF
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77.4A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V
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2N5116 Vishay Siliconix 2N5114-5116.PDF 124387-lds-0006 Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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IRF730 IRF730 Vishay Siliconix 91047.pdf Description: MOSFET N-CH 400V 5.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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IRFR9220TRRPBF IRFR9220TRRPBF Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
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IRFR9220TRRPBF IRFR9220TRRPBF Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
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IRLZ44STRRPBF IRLZ44STRRPBF Vishay Siliconix sihlz44s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
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В кошику  од. на суму  грн.
IRLZ44STRRPBF IRLZ44STRRPBF Vishay Siliconix sihlz44s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 623 шт:
термін постачання 21-31 дні (днів)
2+291.70 грн
10+184.63 грн
100+129.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG442LEDQ-GE3 DG442LEDQ-GE3 Vishay Siliconix dg441le.pdf Description: IC SW SPST-NOX4 26OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
3+122.03 грн
10+85.96 грн
25+78.14 грн
100+65.23 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG409LEDN-T1-GE4 DG409LEDN-T1-GE4 Vishay Siliconix dg408le.pdf Description: IC SWITCH SP4T X 2 23OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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В кошику  од. на суму  грн.
DG409LEDN-T1-GE4 DG409LEDN-T1-GE4 Vishay Siliconix dg408le.pdf Description: IC SWITCH SP4T X 2 23OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
на замовлення 2449 шт:
термін постачання 21-31 дні (днів)
3+126.21 грн
10+89.34 грн
25+81.26 грн
100+67.90 грн
250+63.91 грн
500+61.51 грн
1000+58.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF9610STRRPBF IRF9610STRRPBF Vishay Siliconix sihf9610.pdf Description: N-CHANNEL200V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
4+101.97 грн
10+61.97 грн
100+41.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFP460 IRFP460 Vishay Siliconix 91237.pdf Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товару немає в наявності
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SI1480DH-T1-BE3 SI1480DH-T1-BE3 Vishay Siliconix si1480dh.pdf Description: MOSFET N-CH 100V 2.1A/2.6A SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
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SI1480DH-T1-BE3 SI1480DH-T1-BE3 Vishay Siliconix si1480dh.pdf Description: MOSFET N-CH 100V 2.1A/2.6A SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
на замовлення 2957 шт:
термін постачання 21-31 дні (днів)
15+22.57 грн
18+18.35 грн
100+16.31 грн
500+15.24 грн
1000+13.41 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
SQM100N04-2m7_GE3 SQM100N04-2m7_GE3 Vishay Siliconix sqm100n04-2m7.pdf Description: MOSFET N-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V
Qualification: AEC-Q101
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SQM100N04-2m7_GE3 SQM100N04-2m7_GE3 Vishay Siliconix sqm100n04-2m7.pdf Description: MOSFET N-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V
Qualification: AEC-Q101
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IRF840PBF IRF840PBF Vishay Siliconix irf840_SiHF840_RevD_5-2-16.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 2813 шт:
термін постачання 21-31 дні (днів)
2+251.58 грн
50+122.05 грн
100+110.35 грн
500+84.35 грн
1000+78.18 грн
2000+73.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHFR420TRL-GE3 SIHFR420TRL-GE3 Vishay Siliconix sihfr420.pdf Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHFR420TRL-GE3 SIHFR420TRL-GE3 Vishay Siliconix sihfr420.pdf Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 2798 шт:
термін постачання 21-31 дні (днів)
5+82.75 грн
10+57.79 грн
100+38.25 грн
500+28.01 грн
1000+25.47 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIHFR9310-GE3 SIHFR9310-GE3 Vishay Siliconix sihfr931.pdf Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 2888 шт:
термін постачання 21-31 дні (днів)
4+84.42 грн
10+50.87 грн
100+33.48 грн
500+24.39 грн
1000+22.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHFZ48S-GE3 SIHFZ48S-GE3 Vishay Siliconix sihfz48s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+181.37 грн
10+126.60 грн
100+89.90 грн
500+68.17 грн
1000+62.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SI2302HDS-T1-GE3 SI2302HDS-T1-GE3 Vishay Siliconix Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
товару немає в наявності
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SI4936CDY-T1-E3 si4936cdy.pdf
SI4936CDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+17.96 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4936CDY-T1-E3 si4936cdy.pdf
SI4936CDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+71.88 грн
10+42.98 грн
100+28.05 грн
500+20.29 грн
1000+18.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SQ2361CES-T1_GE3 sq2361ces.pdf
SQ2361CES-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2720 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.31 грн
12+29.14 грн
100+18.66 грн
500+13.29 грн
1000+11.93 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF9540 description 91078.pdf
IRF9540
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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IRF9520 91074.pdf
IRF9520
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
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SQS181ELNW-T1_GE3 sqs181elnw.pdf
SQS181ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11696 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+31.43 грн
6000+28.73 грн
9000+27.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS181ELNW-T1_GE3 sqs181elnw.pdf
SQS181ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11714 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.85 грн
10+71.63 грн
100+47.91 грн
500+35.40 грн
1000+32.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIJK5100E-T1-GE3 sijk5100e.pdf
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+267.69 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
SIJK5100E-T1-GE3 sijk5100e.pdf
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+468.89 грн
10+345.52 грн
25+319.17 грн
100+272.35 грн
250+259.38 грн
500+251.57 грн
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IRFL9014TR sihfl901.pdf
IRFL9014TR
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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SIRA62DDP-T1-UE3 sira62ddp.pdf
SIRA62DDP-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
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SIRA62DDP-T1-UE3 sira62ddp.pdf
SIRA62DDP-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
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DG611EEY-T1-GE3
DG611EEY-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX4 115OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 600mOhm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
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DG611EEQ-T1-GE3 dg611e.pdf
DG611EEQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX4 115OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 600mOhm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
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SQJ858AEP-T1_BE3 sqj858aep.pdf
SQJ858AEP-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Qualification: AEC-Q101
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SQJ858AEP-T1_BE3 sqj858aep.pdf
SQJ858AEP-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2893 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.07 грн
10+83.79 грн
100+56.44 грн
500+41.98 грн
1000+39.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG1408EN-T1-GE4 dg1408.pdf
DG1408EN-T1-GE4
Виробник: Vishay Siliconix
Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Number of Circuits: 1
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SIHB125N65E-GE3 sihb125n65e.pdf
SIHB125N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+592.59 грн
10+388.82 грн
100+285.71 грн
500+231.59 грн
В кошику  од. на суму  грн.
SIHH125N65E-T1-GE3 sihh125n65e.pdf
SIHH125N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+257.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIHH125N65E-T1-GE3 sihh125n65e.pdf
SIHH125N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+595.93 грн
10+390.76 грн
100+303.97 грн
В кошику  од. на суму  грн.
SIHK125N65E-T1-GE3 sihk125n65e.pdf
SIHK125N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+266.02 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SIHK125N65E-T1-GE3 sihk125n65e.pdf
SIHK125N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+610.14 грн
10+400.58 грн
100+313.54 грн
В кошику  од. на суму  грн.
SIHG125N65E-GE3 sihg125n65e.pdf
SIHG125N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+647.75 грн
10+426.73 грн
100+315.37 грн
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SIHFU024-GE3 sihfr024.pdf
SIHFU024-GE3
Виробник: Vishay Siliconix
Description: LOGIC MOSFET N-CHANNEL 60V
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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SQS166ELNW-T1_GE3 sqs166elnw.pdf
SQS166ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 25 V
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SQS166ELNW-T1_GE3 sqs166elnw.pdf
SQS166ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 25 V
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.98 грн
10+34.93 грн
25+31.26 грн
100+25.66 грн
250+23.89 грн
500+22.83 грн
1000+21.59 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SQS182ELNW-T1_GE3 sqs182elnw.pdf
SQS182ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2024 pF @ 25 V
Qualification: AEC-Q101
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SQS182ELNW-T1_GE3 sqs182elnw.pdf
SQS182ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2024 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2736 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.76 грн
10+56.18 грн
100+42.25 грн
500+31.61 грн
1000+28.76 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQS120ELNW-T1_GE3 sqs120elnw.pdf
SQS120ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+28.93 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS120ELNW-T1_GE3 sqs120elnw.pdf
SQS120ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.64 грн
10+66.32 грн
100+47.89 грн
500+35.34 грн
1000+32.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQS124ELNW-T1_GE3 sqs124elnw.pdf
SQS124ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 25 V
Qualification: AEC-Q101
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IRF710 description 91041.pdf
IRF710
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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IRF520 irl620.pdf
IRF520
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
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SIHF9630S-GE3 sihf9630.pdf
SIHF9630S-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.73 грн
10+97.95 грн
100+66.81 грн
500+50.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISS26LDN-T1-UE3 siss26ldn.pdf
SISS26LDN-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 150C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+32.50 грн
6000+29.14 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SISS26LDN-T1-UE3 siss26ldn.pdf
SISS26LDN-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 150C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.19 грн
10+73.89 грн
100+49.43 грн
500+36.55 грн
1000+33.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF830 description irl620.pdf
IRF830
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
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SIR570DP-T1-BE3 sir570dp.pdf
SIR570DP-T1-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) 175 C MOSF
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77.4A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V
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SIR570DP-T1-BE3 sir570dp.pdf
SIR570DP-T1-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) 175 C MOSF
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77.4A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V
товару немає в наявності
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2N5116 2N5114-5116.PDF 124387-lds-0006
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
товару немає в наявності
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IRF730 91047.pdf
IRF730
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товару немає в наявності
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IRFR9220TRRPBF sihfr922.pdf
IRFR9220TRRPBF
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
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IRFR9220TRRPBF sihfr922.pdf
IRFR9220TRRPBF
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
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IRLZ44STRRPBF sihlz44s.pdf
IRLZ44STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
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IRLZ44STRRPBF sihlz44s.pdf
IRLZ44STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 623 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+291.70 грн
10+184.63 грн
100+129.85 грн
Мінімальне замовлення: 2
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DG442LEDQ-GE3 dg441le.pdf
DG442LEDQ-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NOX4 26OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.03 грн
10+85.96 грн
25+78.14 грн
100+65.23 грн
Мінімальне замовлення: 3
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DG409LEDN-T1-GE4 dg408le.pdf
DG409LEDN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SWITCH SP4T X 2 23OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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DG409LEDN-T1-GE4 dg408le.pdf
DG409LEDN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SWITCH SP4T X 2 23OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
на замовлення 2449 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.21 грн
10+89.34 грн
25+81.26 грн
100+67.90 грн
250+63.91 грн
500+61.51 грн
1000+58.55 грн
Мінімальне замовлення: 3
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IRF9610STRRPBF sihf9610.pdf
IRF9610STRRPBF
Виробник: Vishay Siliconix
Description: N-CHANNEL200V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.97 грн
10+61.97 грн
100+41.12 грн
Мінімальне замовлення: 4
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IRFP460 91237.pdf
IRFP460
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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SI1480DH-T1-BE3 si1480dh.pdf
SI1480DH-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 2.1A/2.6A SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
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SI1480DH-T1-BE3 si1480dh.pdf
SI1480DH-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 2.1A/2.6A SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
на замовлення 2957 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+22.57 грн
18+18.35 грн
100+16.31 грн
500+15.24 грн
1000+13.41 грн
Мінімальне замовлення: 15
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SQM100N04-2m7_GE3 sqm100n04-2m7.pdf
SQM100N04-2m7_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V
Qualification: AEC-Q101
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SQM100N04-2m7_GE3 sqm100n04-2m7.pdf
SQM100N04-2m7_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V
Qualification: AEC-Q101
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IRF840PBF irf840_SiHF840_RevD_5-2-16.pdf
IRF840PBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 2813 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+251.58 грн
50+122.05 грн
100+110.35 грн
500+84.35 грн
1000+78.18 грн
2000+73.39 грн
Мінімальне замовлення: 2
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SIHFR420TRL-GE3 sihfr420.pdf
SIHFR420TRL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
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SIHFR420TRL-GE3 sihfr420.pdf
SIHFR420TRL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 2798 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+82.75 грн
10+57.79 грн
100+38.25 грн
500+28.01 грн
1000+25.47 грн
Мінімальне замовлення: 5
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SIHFR9310-GE3 sihfr931.pdf
SIHFR9310-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 2888 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+84.42 грн
10+50.87 грн
100+33.48 грн
500+24.39 грн
1000+22.12 грн
Мінімальне замовлення: 4
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SIHFZ48S-GE3 sihfz48s.pdf
SIHFZ48S-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+181.37 грн
10+126.60 грн
100+89.90 грн
500+68.17 грн
1000+62.97 грн
Мінімальне замовлення: 2
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SI2302HDS-T1-GE3
SI2302HDS-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
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