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DG9233EDQ-T1-GE3 DG9233EDQ-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST-NOX2 25OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
на замовлення 1637 шт:
термін постачання 21-31 дні (днів)
2+159.53 грн
10+113.69 грн
25+103.70 грн
100+86.96 грн
250+82.01 грн
500+79.03 грн
1000+75.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHB100N65E-GE3 SIHB100N65E-GE3 Vishay Siliconix sihb100n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
1+669.71 грн
10+449.84 грн
100+386.21 грн
500+343.43 грн
В кошику  од. на суму  грн.
SIHP33N60E-GE3 SIHP33N60E-GE3 Vishay Siliconix sihp33n60e.pdf Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
на замовлення 803 шт:
термін постачання 21-31 дні (днів)
1+458.84 грн
50+235.79 грн
100+215.96 грн
500+170.09 грн
В кошику  од. на суму  грн.
SI3473CDV-T1-BE3 SI3473CDV-T1-BE3 Vishay Siliconix si3473cd.pdf Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+20.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI3473CDV-T1-BE3 SI3473CDV-T1-BE3 Vishay Siliconix si3473cd.pdf Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
4+82.13 грн
10+49.43 грн
100+32.38 грн
500+23.50 грн
1000+21.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIR500DP-T1-UE3 SIR500DP-T1-UE3 Vishay Siliconix sir500dp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SIR500DP-T1-UE3 SIR500DP-T1-UE3 Vishay Siliconix sir500dp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
3+131.89 грн
10+93.24 грн
25+84.78 грн
100+70.83 грн
250+66.68 грн
500+64.17 грн
1000+61.09 грн
2500+58.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHD240N65E-GE3 SIHD240N65E-GE3 Vishay Siliconix sihd240n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+341.96 грн
10+218.80 грн
100+156.03 грн
500+121.30 грн
1000+113.67 грн
В кошику  од. на суму  грн.
SISS5810DN-T1-GE3 SISS5810DN-T1-GE3 Vishay Siliconix siss5810dn.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+26.66 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
SISS5810DN-T1-GE3 SISS5810DN-T1-GE3 Vishay Siliconix siss5810dn.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3+108.20 грн
10+65.56 грн
100+43.77 грн
500+32.30 грн
1000+29.48 грн
2000+28.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISS588DN-T1-BE3 SISS588DN-T1-BE3 Vishay Siliconix siss588dn.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+35.16 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
SISS588DN-T1-BE3 SISS588DN-T1-BE3 Vishay Siliconix siss588dn.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3+134.26 грн
10+82.29 грн
100+55.59 грн
500+41.43 грн
1000+38.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG417DY DG417DY Vishay Siliconix dg417.pdf Description: IC SWITCH SPST-NCX1 35OHM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
DG417DJ DG417DJ Vishay Siliconix dg417.pdf Description: IC SWITCH SPST-NC X 1 35OHM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
DG418DJ DG418DJ Vishay Siliconix dg417.pdf Description: IC SWITCH SPST-NO X 1 35OHM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
DG418DY DG418DY Vishay Siliconix dg417.pdf Description: IC SWITCH SPST-NOX1 35OHM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
SQS482EN-T1_BE3 SQS482EN-T1_BE3 Vishay Siliconix sqs482en.pdf Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+28.22 грн
6000+25.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS482EN-T1_BE3 SQS482EN-T1_BE3 Vishay Siliconix sqs482en.pdf Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3+108.20 грн
10+65.63 грн
100+43.58 грн
500+32.00 грн
1000+29.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHP240N65E-GE3 SIHP240N65E-GE3 Vishay Siliconix sihp240n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
1+368.02 грн
50+185.59 грн
100+169.28 грн
500+132.03 грн
В кошику  од. на суму  грн.
DG308ADY DG308ADY Vishay Siliconix DG308A%2CDG309.pdf Description: IC SW SPST-NOX4 100OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Dual (V±): ±15V
Charge Injection: -10pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 11pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
товару немає в наявності
В кошику  од. на суму  грн.
DG308ACJ DG308ACJ Vishay Siliconix DG308A%2CDG309.pdf Description: IC SWITCH SPST-NOX4 100OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Dual (V±): ±15V
Charge Injection: -10pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 11pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
товару немає в наявності
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SISS30LDN-T1-UE3 SISS30LDN-T1-UE3 Vishay Siliconix siss30ldn.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
SISS30LDN-T1-UE3 SISS30LDN-T1-UE3 Vishay Siliconix siss30ldn.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3+118.46 грн
10+72.55 грн
100+48.67 грн
500+36.31 грн
1000+33.08 грн
Мінімальне замовлення: 3
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MXP120A045FW-GE3 MXP120A045FW-GE3 Vishay Siliconix Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 2.38V @ 5mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1958 pF @ 800 V
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MXP120A045FL-GE3 MXP120A045FL-GE3 Vishay Siliconix Description: SILICON CARBIDE MOSFET
Packaging: Tube
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2N4393 Vishay Siliconix 2N%2CPN%2CSST4391.pdf Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Power - Max: 1.8 W
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
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SIHP105N60EF-GE3 SIHP105N60EF-GE3 Vishay Siliconix sihp105n60ef.pdf Description: MOSFET N-CH 600V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
на замовлення 986 шт:
термін постачання 21-31 дні (днів)
1+412.25 грн
50+209.84 грн
100+191.82 грн
500+150.43 грн
В кошику  од. на суму  грн.
SIHP100N65E-GE3 SIHP100N65E-GE3 Vishay Siliconix sihp100n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+662.60 грн
10+438.58 грн
100+326.06 грн
500+274.35 грн
В кошику  од. на суму  грн.
IRFRC20PBF-BE3 IRFRC20PBF-BE3 Vishay Siliconix sihfrc20.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+164.27 грн
10+105.63 грн
100+72.32 грн
500+54.48 грн
1000+54.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHP28N60EF-GE3 SIHP28N60EF-GE3 Vishay Siliconix sihp28n60ef.pdf Description: MOSFET N-CH 600V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
на замовлення 940 шт:
термін постачання 21-31 дні (днів)
1+451.74 грн
50+232.44 грн
100+212.89 грн
500+167.67 грн
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SI4136DY-T1-GE3 SI4136DY-T1-GE3 Vishay Siliconix si4136dy.pdf Description: MOSFET N-CH 20V 46A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
на замовлення 1581 шт:
термін постачання 21-31 дні (днів)
4+87.66 грн
10+63.27 грн
100+51.04 грн
500+46.05 грн
1000+44.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
Si4190BDY-T1-GE3 Si4190BDY-T1-GE3 Vishay Siliconix si4190bdy.pdf Description: N-CHANNEL 100 V (D-S) MOSFET SO-
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 8.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+58.57 грн
5000+56.08 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
Si4190BDY-T1-GE3 Si4190BDY-T1-GE3 Vishay Siliconix si4190bdy.pdf Description: N-CHANNEL 100 V (D-S) MOSFET SO-
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 8.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 50 V
на замовлення 7485 шт:
термін постачання 21-31 дні (днів)
2+193.49 грн
10+120.46 грн
100+83.07 грн
500+64.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHP125N65E-GE3 SIHP125N65E-GE3 Vishay Siliconix sihp125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+548.88 грн
10+360.02 грн
100+264.53 грн
500+214.35 грн
В кошику  од. на суму  грн.
SIR574DP-T1-RE3 SIR574DP-T1-RE3 Vishay Siliconix sir574dp.pdf Description: N-CHANNEL 150 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+40.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR574DP-T1-RE3 SIR574DP-T1-RE3 Vishay Siliconix sir574dp.pdf Description: N-CHANNEL 150 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 75 V
на замовлення 5935 шт:
термін постачання 21-31 дні (днів)
3+149.26 грн
10+91.94 грн
100+62.42 грн
500+46.71 грн
1000+44.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQ3426AEEV-T1_BE3 SQ3426AEEV-T1_BE3 Vishay Siliconix sq3426aeev.pdf Description: MOSFET N-CH 60V 7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
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SQ3426AEEV-T1_BE3 SQ3426AEEV-T1_BE3 Vishay Siliconix sq3426aeev.pdf Description: MOSFET N-CH 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2729 шт:
термін постачання 21-31 дні (днів)
4+81.34 грн
10+48.90 грн
100+32.00 грн
500+23.22 грн
1000+21.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI4936CDY-T1-E3 SI4936CDY-T1-E3 Vishay Siliconix si4936cdy.pdf Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+16.97 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4936CDY-T1-E3 SI4936CDY-T1-E3 Vishay Siliconix si4936cdy.pdf Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
5+67.92 грн
10+40.61 грн
100+26.50 грн
500+19.17 грн
1000+17.33 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SQ2361CES-T1_GE3 SQ2361CES-T1_GE3 Vishay Siliconix sq2361ces.pdf Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)
7+46.60 грн
12+27.45 грн
100+17.58 грн
500+12.52 грн
1000+11.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF9520 IRF9520 Vishay Siliconix 91074.pdf Description: MOSFET P-CH 100V 6.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
товару немає в наявності
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SQS181ELNW-T1_GE3 SQS181ELNW-T1_GE3 Vishay Siliconix sqs181elnw.pdf Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11696 шт:
термін постачання 21-31 дні (днів)
3000+29.70 грн
6000+27.14 грн
9000+26.01 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS181ELNW-T1_GE3 SQS181ELNW-T1_GE3 Vishay Siliconix sqs181elnw.pdf Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11714 шт:
термін постачання 21-31 дні (днів)
3+111.35 грн
10+67.68 грн
100+45.27 грн
500+33.45 грн
1000+30.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIJK5100E-T1-GE3 Vishay Siliconix sijk5100e.pdf Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+252.94 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
SIJK5100E-T1-GE3 Vishay Siliconix sijk5100e.pdf Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+443.05 грн
10+326.48 грн
25+301.58 грн
100+257.34 грн
250+245.09 грн
500+237.70 грн
В кошику  од. на суму  грн.
IRFL9014TR IRFL9014TR Vishay Siliconix sihfl901.pdf Description: MOSFET P-CH 60V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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SIRA62DDP-T1-UE3 SIRA62DDP-T1-UE3 Vishay Siliconix sira62ddp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
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SIRA62DDP-T1-UE3 SIRA62DDP-T1-UE3 Vishay Siliconix sira62ddp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
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DG611EEY-T1-GE3 DG611EEY-T1-GE3 Vishay Siliconix Description: IC SW SPST-NCX4 115OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 600mOhm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
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DG611EEQ-T1-GE3 DG611EEQ-T1-GE3 Vishay Siliconix dg611e.pdf Description: IC SW SPST-NCX4 115OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 600mOhm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
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SQJ858AEP-T1_BE3 SQJ858AEP-T1_BE3 Vishay Siliconix sqj858aep.pdf Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Qualification: AEC-Q101
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SQJ858AEP-T1_BE3 SQJ858AEP-T1_BE3 Vishay Siliconix sqj858aep.pdf Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2893 шт:
термін постачання 21-31 дні (днів)
3+129.52 грн
10+79.17 грн
100+53.33 грн
500+39.67 грн
1000+36.85 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG1408EN-T1-GE4 DG1408EN-T1-GE4 Vishay Siliconix dg1408.pdf Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Number of Circuits: 1
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SIHB125N65E-GE3 SIHB125N65E-GE3 Vishay Siliconix sihb125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+549.67 грн
10+360.71 грн
100+265.09 грн
500+214.88 грн
В кошику  од. на суму  грн.
SIHH125N65E-T1-GE3 SIHH125N65E-T1-GE3 Vishay Siliconix sihh125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+239.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIHH125N65E-T1-GE3 SIHH125N65E-T1-GE3 Vishay Siliconix sihh125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+552.82 грн
10+362.53 грн
100+282.03 грн
В кошику  од. на суму  грн.
SIHK125N65E-T1-GE3 SIHK125N65E-T1-GE3 Vishay Siliconix sihk125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+246.82 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SIHK125N65E-T1-GE3 SIHK125N65E-T1-GE3 Vishay Siliconix sihk125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+566.25 грн
10+371.66 грн
100+290.91 грн
В кошику  од. на суму  грн.
SIHG125N65E-GE3 SIHG125N65E-GE3 Vishay Siliconix sihg125n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
1+601.00 грн
10+395.92 грн
100+292.62 грн
В кошику  од. на суму  грн.
DG9233EDQ-T1-GE3 dg9232e.pdf
DG9233EDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 25OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 2
на замовлення 1637 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.53 грн
10+113.69 грн
25+103.70 грн
100+86.96 грн
250+82.01 грн
500+79.03 грн
1000+75.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHB100N65E-GE3 sihb100n65e.pdf
SIHB100N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+669.71 грн
10+449.84 грн
100+386.21 грн
500+343.43 грн
В кошику  од. на суму  грн.
SIHP33N60E-GE3 sihp33n60e.pdf
SIHP33N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
на замовлення 803 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+458.84 грн
50+235.79 грн
100+215.96 грн
500+170.09 грн
В кошику  од. на суму  грн.
SI3473CDV-T1-BE3 si3473cd.pdf
SI3473CDV-T1-BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+20.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI3473CDV-T1-BE3 si3473cd.pdf
SI3473CDV-T1-BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.13 грн
10+49.43 грн
100+32.38 грн
500+23.50 грн
1000+21.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIR500DP-T1-UE3 sir500dp.pdf
SIR500DP-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SIR500DP-T1-UE3 sir500dp.pdf
SIR500DP-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+131.89 грн
10+93.24 грн
25+84.78 грн
100+70.83 грн
250+66.68 грн
500+64.17 грн
1000+61.09 грн
2500+58.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHD240N65E-GE3 sihd240n65e.pdf
SIHD240N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+341.96 грн
10+218.80 грн
100+156.03 грн
500+121.30 грн
1000+113.67 грн
В кошику  од. на суму  грн.
SISS5810DN-T1-GE3 siss5810dn.pdf
SISS5810DN-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+26.66 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
SISS5810DN-T1-GE3 siss5810dn.pdf
SISS5810DN-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+108.20 грн
10+65.56 грн
100+43.77 грн
500+32.30 грн
1000+29.48 грн
2000+28.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISS588DN-T1-BE3 siss588dn.pdf
SISS588DN-T1-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+35.16 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
SISS588DN-T1-BE3 siss588dn.pdf
SISS588DN-T1-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.26 грн
10+82.29 грн
100+55.59 грн
500+41.43 грн
1000+38.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG417DY dg417.pdf
DG417DY
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX1 35OHM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
DG417DJ dg417.pdf
DG417DJ
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NC X 1 35OHM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
DG418DJ dg417.pdf
DG418DJ
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NO X 1 35OHM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
DG418DY dg417.pdf
DG418DY
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX1 35OHM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
SQS482EN-T1_BE3 sqs482en.pdf
SQS482EN-T1_BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+28.22 грн
6000+25.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS482EN-T1_BE3 sqs482en.pdf
SQS482EN-T1_BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+108.20 грн
10+65.63 грн
100+43.58 грн
500+32.00 грн
1000+29.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHP240N65E-GE3 sihp240n65e.pdf
SIHP240N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+368.02 грн
50+185.59 грн
100+169.28 грн
500+132.03 грн
В кошику  од. на суму  грн.
DG308ADY DG308A%2CDG309.pdf
DG308ADY
Виробник: Vishay Siliconix
Description: IC SW SPST-NOX4 100OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Dual (V±): ±15V
Charge Injection: -10pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 11pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
товару немає в наявності
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DG308ACJ DG308A%2CDG309.pdf
DG308ACJ
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 100OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Dual (V±): ±15V
Charge Injection: -10pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 11pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
товару немає в наявності
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SISS30LDN-T1-UE3 siss30ldn.pdf
SISS30LDN-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
товару немає в наявності
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SISS30LDN-T1-UE3 siss30ldn.pdf
SISS30LDN-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.46 грн
10+72.55 грн
100+48.67 грн
500+36.31 грн
1000+33.08 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MXP120A045FW-GE3
MXP120A045FW-GE3
Виробник: Vishay Siliconix
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 2.38V @ 5mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1958 pF @ 800 V
товару немає в наявності
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MXP120A045FL-GE3
MXP120A045FL-GE3
Виробник: Vishay Siliconix
Description: SILICON CARBIDE MOSFET
Packaging: Tube
товару немає в наявності
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2N4393 2N%2CPN%2CSST4391.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Power - Max: 1.8 W
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товару немає в наявності
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SIHP105N60EF-GE3 sihp105n60ef.pdf
SIHP105N60EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
на замовлення 986 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+412.25 грн
50+209.84 грн
100+191.82 грн
500+150.43 грн
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SIHP100N65E-GE3 sihp100n65e.pdf
SIHP100N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+662.60 грн
10+438.58 грн
100+326.06 грн
500+274.35 грн
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IRFRC20PBF-BE3 sihfrc20.pdf
IRFRC20PBF-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+164.27 грн
10+105.63 грн
100+72.32 грн
500+54.48 грн
1000+54.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHP28N60EF-GE3 sihp28n60ef.pdf
SIHP28N60EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
на замовлення 940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+451.74 грн
50+232.44 грн
100+212.89 грн
500+167.67 грн
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SI4136DY-T1-GE3 si4136dy.pdf
SI4136DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 46A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
на замовлення 1581 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.66 грн
10+63.27 грн
100+51.04 грн
500+46.05 грн
1000+44.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
Si4190BDY-T1-GE3 si4190bdy.pdf
Si4190BDY-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET SO-
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 8.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+58.57 грн
5000+56.08 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
Si4190BDY-T1-GE3 si4190bdy.pdf
Si4190BDY-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET SO-
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 8.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 50 V
на замовлення 7485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.49 грн
10+120.46 грн
100+83.07 грн
500+64.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHP125N65E-GE3 sihp125n65e.pdf
SIHP125N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+548.88 грн
10+360.02 грн
100+264.53 грн
500+214.35 грн
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SIR574DP-T1-RE3 sir574dp.pdf
SIR574DP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+40.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR574DP-T1-RE3 sir574dp.pdf
SIR574DP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 75 V
на замовлення 5935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.26 грн
10+91.94 грн
100+62.42 грн
500+46.71 грн
1000+44.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQ3426AEEV-T1_BE3 sq3426aeev.pdf
SQ3426AEEV-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
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SQ3426AEEV-T1_BE3 sq3426aeev.pdf
SQ3426AEEV-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2729 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+81.34 грн
10+48.90 грн
100+32.00 грн
500+23.22 грн
1000+21.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI4936CDY-T1-E3 si4936cdy.pdf
SI4936CDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+16.97 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4936CDY-T1-E3 si4936cdy.pdf
SI4936CDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+67.92 грн
10+40.61 грн
100+26.50 грн
500+19.17 грн
1000+17.33 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SQ2361CES-T1_GE3 sq2361ces.pdf
SQ2361CES-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+46.60 грн
12+27.45 грн
100+17.58 грн
500+12.52 грн
1000+11.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF9520 91074.pdf
IRF9520
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
товару немає в наявності
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SQS181ELNW-T1_GE3 sqs181elnw.pdf
SQS181ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11696 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+29.70 грн
6000+27.14 грн
9000+26.01 грн
Мінімальне замовлення: 3000
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SQS181ELNW-T1_GE3 sqs181elnw.pdf
SQS181ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11714 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.35 грн
10+67.68 грн
100+45.27 грн
500+33.45 грн
1000+30.54 грн
Мінімальне замовлення: 3
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SIJK5100E-T1-GE3 sijk5100e.pdf
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+252.94 грн
Мінімальне замовлення: 1500
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SIJK5100E-T1-GE3 sijk5100e.pdf
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+443.05 грн
10+326.48 грн
25+301.58 грн
100+257.34 грн
250+245.09 грн
500+237.70 грн
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IRFL9014TR sihfl901.pdf
IRFL9014TR
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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SIRA62DDP-T1-UE3 sira62ddp.pdf
SIRA62DDP-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
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SIRA62DDP-T1-UE3 sira62ddp.pdf
SIRA62DDP-T1-UE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
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DG611EEY-T1-GE3
DG611EEY-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX4 115OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 600mOhm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
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DG611EEQ-T1-GE3 dg611e.pdf
DG611EEQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX4 115OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 600mOhm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
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SQJ858AEP-T1_BE3 sqj858aep.pdf
SQJ858AEP-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Qualification: AEC-Q101
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SQJ858AEP-T1_BE3 sqj858aep.pdf
SQJ858AEP-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2893 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+129.52 грн
10+79.17 грн
100+53.33 грн
500+39.67 грн
1000+36.85 грн
Мінімальне замовлення: 3
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DG1408EN-T1-GE4 dg1408.pdf
DG1408EN-T1-GE4
Виробник: Vishay Siliconix
Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Number of Circuits: 1
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SIHB125N65E-GE3 sihb125n65e.pdf
SIHB125N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+549.67 грн
10+360.71 грн
100+265.09 грн
500+214.88 грн
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SIHH125N65E-T1-GE3 sihh125n65e.pdf
SIHH125N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+239.28 грн
Мінімальне замовлення: 3000
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SIHH125N65E-T1-GE3 sihh125n65e.pdf
SIHH125N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+552.82 грн
10+362.53 грн
100+282.03 грн
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SIHK125N65E-T1-GE3 sihk125n65e.pdf
SIHK125N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+246.82 грн
Мінімальне замовлення: 2000
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SIHK125N65E-T1-GE3 sihk125n65e.pdf
SIHK125N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+566.25 грн
10+371.66 грн
100+290.91 грн
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SIHG125N65E-GE3 sihg125n65e.pdf
SIHG125N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+601.00 грн
10+395.92 грн
100+292.62 грн
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