Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (11884) > Сторінка 180 з 199

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SIRS580DPW-T1-RE3 SIRS580DPW-T1-RE3 Vishay Siliconix sirs580dpw.pdf Description: N-CHANNEL 80-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.9W (Ta), 171W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3+149.97 грн
10+106.75 грн
25+97.35 грн
100+81.69 грн
250+77.08 грн
500+74.30 грн
1000+70.82 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SQJA61EP-T1_GE3 SQJA61EP-T1_GE3 Vishay Siliconix sqja61ep.pdf Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54.5A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQJA61EP-T1_GE3 SQJA61EP-T1_GE3 Vishay Siliconix sqja61ep.pdf Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54.5A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1645 шт:
термін постачання 21-31 дні (днів)
3+152.35 грн
10+93.53 грн
50+70.56 грн
100+59.25 грн
500+47.03 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SQJ120EP-T1_GE3 SQJ120EP-T1_GE3 Vishay Siliconix sqj120elp.pdf Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5619 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+33.91 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQJ120EP-T1_GE3 SQJ120EP-T1_GE3 Vishay Siliconix sqj120elp.pdf Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5619 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
5+71.42 грн
10+49.67 грн
25+44.81 грн
100+37.07 грн
250+34.70 грн
500+33.27 грн
1000+31.57 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRF620 IRF620 Vishay Siliconix irf620.pdf Description: MOSFET N-CH 200V 5.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SiHP30N60E-E3 SiHP30N60E-E3 Vishay Siliconix sihp30n60e.pdf Description: MOSFET N-CH 600V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SQAA42CEJW-T1_GE3 SQAA42CEJW-T1_GE3 Vishay Siliconix sqaa42cejw.pdf Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQAA42CEJW-T1_GE3 SQAA42CEJW-T1_GE3 Vishay Siliconix sqaa42cejw.pdf Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SI5446DU-T1-GE3 Vishay Siliconix si5442du.pdf Description: MOSFET N-CH 30V 25A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 10A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Single
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
SQ3469CEV-T1_GE3 SQ3469CEV-T1_GE3 Vishay Siliconix sq3469cev.pdf Description: P-CHANNEL 22-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQ3469CEV-T1_GE3 SQ3469CEV-T1_GE3 Vishay Siliconix sq3469cev.pdf Description: P-CHANNEL 22-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQM120N04-1M7_JE3 SQM120N04-1M7_JE3 Vishay Siliconix sqrs144elp.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17350 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
SQM120N04-1M7_JE3 SQM120N04-1M7_JE3 Vishay Siliconix sqrs144elp.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17350 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQM120N04-1M7L_JE3 SQM120N04-1M7L_JE3 Vishay Siliconix sqm120n04-1m7.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
SQM120N04-1M7L_JE3 SQM120N04-1M7L_JE3 Vishay Siliconix sqm120n04-1m7.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
Qualification: AEC-Q101
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
2+278.52 грн
10+175.67 грн
50+135.97 грн
100+115.60 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DG444BDY-T1-E3 DG444BDY-T1-E3 Vishay Siliconix 72626.pdf Description: IC SWITCH SPST-NCX4 80OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 80Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+89.11 грн
5000+84.06 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DG444BDY-T1-E3 DG444BDY-T1-E3 Vishay Siliconix 72626.pdf Description: IC SWITCH SPST-NCX4 80OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 80Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+171.40 грн
10+122.56 грн
25+111.99 грн
100+94.18 грн
250+88.97 грн
500+85.83 грн
1000+81.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SIHD186N60EFT4-GE3 SIHD186N60EFT4-GE3 Vishay Siliconix sihd186n60ef.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIHD186N60EFT1-GE3 SIHD186N60EFT1-GE3 Vishay Siliconix sihd186n60ef.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DG301AAA Vishay Siliconix DG300A_MIL301A_MIL302A_MIL.pdf Description: IC SWITCH SPDTX1 50OHM TO100-10
Packaging: Bulk
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 8pC
Crosstalk: -74dB @ 500kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
товару немає в наявності
 Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
SIHB35N60ET5-GE3 SIHB35N60ET5-GE3 Vishay Siliconix sihb35n60e.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
SIHB35N60ET1-GE3 SIHB35N60ET1-GE3 Vishay Siliconix sihb35n60e.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF540 IRF540 Vishay Siliconix irf540.pdf Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SQ4850CEY-T1_GE3 SQ4850CEY-T1_GE3 Vishay Siliconix sq4850cey.pdf Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+28.70 грн
5000+25.66 грн
7500+24.65 грн
12500+22.93 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SQ4850CEY-T1_GE3 SQ4850CEY-T1_GE3 Vishay Siliconix sq4850cey.pdf Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Qualification: AEC-Q101
на замовлення 19068 шт:
термін постачання 21-31 дні (днів)
4+105.54 грн
10+64.57 грн
100+43.04 грн
500+31.74 грн
1000+28.95 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIHR120N60E-T1-GE3 SIHR120N60E-T1-GE3 Vishay Siliconix sihr120n60e.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
SIHR120N60EF-T1GE3 SIHR120N60EF-T1GE3 Vishay Siliconix sihr120n60ef.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1929 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
SISS40DN-T1-GE3 SISS40DN-T1-GE3 Vishay Siliconix siss40dn.pdf Description: MOSFET N-CH 100V 36.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SISS40DN-T1-GE3 SISS40DN-T1-GE3 Vishay Siliconix siss40dn.pdf Description: MOSFET N-CH 100V 36.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 1780 шт:
термін постачання 21-31 дні (днів)
3+132.52 грн
10+81.45 грн
100+54.69 грн
500+40.56 грн
1000+37.10 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SIHG080N65SF-GE3 SIHG080N65SF-GE3 Vishay Siliconix sihg080n65sf.pdf Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 22A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+176.46 грн
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
SQJ886EP-T1_BE3 SQJ886EP-T1_BE3 Vishay Siliconix sqj886ep.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQJ886EP-T1_BE3 SQJ886EP-T1_BE3 Vishay Siliconix sqj886ep.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SIHK050N65E-T1-GE3 SIHK050N65E-T1-GE3 Vishay Siliconix sihk050n65e.pdf Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 16A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3992 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
SISF54DN-T1-GE3 Vishay Siliconix sizf54dn.pdf Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 118A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
товару немає в наявності
 Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
SIP32460DB-T2-GE1 SIP32460DB-T2-GE1 Vishay Siliconix sip32461.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
3000+15.55 грн
6000+14.58 грн
9000+14.38 грн
15000+13.29 грн
21000+13.17 грн
30000+13.05 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32460DB-T2-GE1 SIP32460DB-T2-GE1 Vishay Siliconix sip32461.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
на замовлення 59040 шт:
термін постачання 21-31 дні (днів)
10+34.91 грн
13+23.92 грн
25+21.36 грн
100+17.44 грн
250+16.19 грн
500+15.44 грн
1000+14.58 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
SIP32437ADN-T5E3 SIP32437ADN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+39.03 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32437ADN-T5E3 SIP32437ADN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
4+81.73 грн
10+56.77 грн
25+51.32 грн
100+42.54 грн
250+39.86 грн
500+38.24 грн
1000+36.80 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32436ADN-T5E3 SIP32436ADN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32436ADN-T5E3 SIP32436ADN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
4+81.73 грн
10+56.77 грн
25+51.32 грн
100+42.54 грн
250+39.86 грн
500+38.24 грн
1000+36.80 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32436BDN-T5E3 SIP32436BDN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32436BDN-T5E3 SIP32436BDN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
4+81.73 грн
10+56.77 грн
25+51.32 грн
100+42.54 грн
250+39.86 грн
500+38.24 грн
1000+36.80 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32437BDN-T5E3 SIP32437BDN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32437BDN-T5E3 SIP32437BDN-T5E3 Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 2458 шт:
термін постачання 21-31 дні (днів)
4+81.73 грн
10+56.77 грн
25+51.32 грн
100+42.54 грн
250+39.86 грн
500+38.24 грн
1000+36.80 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32440BDN-T1E4 SIP32440BDN-T1E4 Vishay Siliconix sip32440.pdf Description: IC POWER SW 10-DFN
Features: Auto Restart, Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SIP32440BDN-T1E4 SIP32440BDN-T1E4 Vishay Siliconix sip32440.pdf Description: IC POWER SW 10-DFN
Features: Auto Restart, Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
4+93.63 грн
10+65.64 грн
25+59.51 грн
100+49.44 грн
250+46.39 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32440ADN-T1E4 SIP32440ADN-T1E4 Vishay Siliconix sip32440.pdf Description: IC POWER SW 10-DFN
Features: Latch Function, Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+45.85 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SIP32440ADN-T1E4 SIP32440ADN-T1E4 Vishay Siliconix sip32440.pdf Description: IC POWER SW 10-DFN
Features: Latch Function, Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
на замовлення 3142 шт:
термін постачання 21-31 дні (днів)
4+93.63 грн
10+65.64 грн
25+59.51 грн
100+49.44 грн
250+46.39 грн
500+44.55 грн
1000+43.11 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32440BEVB Vishay Siliconix sip32440.pdf Description: EVAL BOARD FOR SIP32440
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: SIP32440B
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIP32437BEVB Vishay Siliconix sip32435_sip32436_sip32437.pdf Description: SIP32437B EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32437B
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIP32436AEVB Vishay Siliconix sic3243x_usermanual.pdf Description: SIP32436A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32436A
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIP32433AEVB Vishay Siliconix sip32433.pdf Description: SIP32433 EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32433A
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIP32437AEVB Vishay Siliconix sic3243x_usermanual.pdf Description: SIP32437A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32437A
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIP32436BEVB Vishay Siliconix sic3243x_usermanual.pdf Description: SIP32436B EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32436B
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIP32433BEVB Vishay Siliconix sip32433.pdf Description: SIP32433 EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32433B
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIP32440AEVB Vishay Siliconix sip32440.pdf Description: SIP32440A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32440A
Primary Attributes: 3.3V ~ 23V Input Voltage
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIHB24N80AE-T1-GE3 SIHB24N80AE-T1-GE3 Vishay Siliconix sihb24n80ae.pdf Description: N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
SIHB155N60EF-GE3 SIHB155N60EF-GE3 Vishay Siliconix sihb155n60ef.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 159mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SQ3427CEEV-T1_GE3 SQ3427CEEV-T1_GE3 Vishay Siliconix sq3427ceev.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+12.19 грн
6000+10.74 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIRS580DPW-T1-RE3 sirs580dpw.pdf
SIRS580DPW-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.9W (Ta), 171W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+149.97 грн
10+106.75 грн
25+97.35 грн
100+81.69 грн
250+77.08 грн
500+74.30 грн
1000+70.82 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SQJA61EP-T1_GE3 sqja61ep.pdf
SQJA61EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54.5A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQJA61EP-T1_GE3 sqja61ep.pdf
SQJA61EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54.5A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1645 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+152.35 грн
10+93.53 грн
50+70.56 грн
100+59.25 грн
500+47.03 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SQJ120EP-T1_GE3 sqj120elp.pdf
SQJ120EP-T1_GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5619 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+33.91 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQJ120EP-T1_GE3 sqj120elp.pdf
SQJ120EP-T1_GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5619 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+71.42 грн
10+49.67 грн
25+44.81 грн
100+37.07 грн
250+34.70 грн
500+33.27 грн
1000+31.57 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRF620 irf620.pdf
IRF620
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SiHP30N60E-E3 sihp30n60e.pdf
SiHP30N60E-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SQAA42CEJW-T1_GE3 sqaa42cejw.pdf
SQAA42CEJW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQAA42CEJW-T1_GE3 sqaa42cejw.pdf
SQAA42CEJW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
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SI5446DU-T1-GE3 si5442du.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 25A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 10A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Single
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
SQ3469CEV-T1_GE3 sq3469cev.pdf
SQ3469CEV-T1_GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 22-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQ3469CEV-T1_GE3 sq3469cev.pdf
SQ3469CEV-T1_GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 22-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Qualification: AEC-Q101
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SQM120N04-1M7_JE3 sqrs144elp.pdf
SQM120N04-1M7_JE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17350 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
SQM120N04-1M7_JE3 sqrs144elp.pdf
SQM120N04-1M7_JE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17350 pF @ 25 V
Qualification: AEC-Q101
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SQM120N04-1M7L_JE3 sqm120n04-1m7.pdf
SQM120N04-1M7L_JE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
SQM120N04-1M7L_JE3 sqm120n04-1m7.pdf
SQM120N04-1M7L_JE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
Qualification: AEC-Q101
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+278.52 грн
10+175.67 грн
50+135.97 грн
100+115.60 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DG444BDY-T1-E3 72626.pdf
DG444BDY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 80OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 80Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+89.11 грн
5000+84.06 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DG444BDY-T1-E3 72626.pdf
DG444BDY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 80OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 80Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+171.40 грн
10+122.56 грн
25+111.99 грн
100+94.18 грн
250+88.97 грн
500+85.83 грн
1000+81.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SIHD186N60EFT4-GE3 sihd186n60ef.pdf
SIHD186N60EFT4-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIHD186N60EFT1-GE3 sihd186n60ef.pdf
SIHD186N60EFT1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DG301AAA DG300A_MIL301A_MIL302A_MIL.pdf
Виробник: Vishay Siliconix
Description: IC SWITCH SPDTX1 50OHM TO100-10
Packaging: Bulk
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 8pC
Crosstalk: -74dB @ 500kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
SIHB35N60ET5-GE3 sihb35n60e.pdf
SIHB35N60ET5-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
SIHB35N60ET1-GE3 sihb35n60e.pdf
SIHB35N60ET1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF540 irf540.pdf
IRF540
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SQ4850CEY-T1_GE3 sq4850cey.pdf
SQ4850CEY-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+28.70 грн
5000+25.66 грн
7500+24.65 грн
12500+22.93 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SQ4850CEY-T1_GE3 sq4850cey.pdf
SQ4850CEY-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Qualification: AEC-Q101
на замовлення 19068 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+105.54 грн
10+64.57 грн
100+43.04 грн
500+31.74 грн
1000+28.95 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIHR120N60E-T1-GE3 sihr120n60e.pdf
SIHR120N60E-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
SIHR120N60EF-T1GE3 sihr120n60ef.pdf
SIHR120N60EF-T1GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1929 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
SISS40DN-T1-GE3 siss40dn.pdf
SISS40DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 36.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SISS40DN-T1-GE3 siss40dn.pdf
SISS40DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 36.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 1780 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+132.52 грн
10+81.45 грн
100+54.69 грн
500+40.56 грн
1000+37.10 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SIHG080N65SF-GE3 sihg080n65sf.pdf
SIHG080N65SF-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 22A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
500+176.46 грн
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
SQJ886EP-T1_BE3 sqj886ep.pdf
SQJ886EP-T1_BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SQJ886EP-T1_BE3 sqj886ep.pdf
SQJ886EP-T1_BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
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SIHK050N65E-T1-GE3 sihk050n65e.pdf
SIHK050N65E-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 16A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3992 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
SISF54DN-T1-GE3 sizf54dn.pdf
Виробник: Vishay Siliconix
Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 118A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
SIP32460DB-T2-GE1 sip32461.pdf
SIP32460DB-T2-GE1
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+15.55 грн
6000+14.58 грн
9000+14.38 грн
15000+13.29 грн
21000+13.17 грн
30000+13.05 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32460DB-T2-GE1 sip32461.pdf
SIP32460DB-T2-GE1
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
на замовлення 59040 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+34.91 грн
13+23.92 грн
25+21.36 грн
100+17.44 грн
250+16.19 грн
500+15.44 грн
1000+14.58 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
SIP32437ADN-T5E3 sip32435_sip32436_sip32437.pdf
SIP32437ADN-T5E3
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+39.03 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32437ADN-T5E3 sip32435_sip32436_sip32437.pdf
SIP32437ADN-T5E3
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+81.73 грн
10+56.77 грн
25+51.32 грн
100+42.54 грн
250+39.86 грн
500+38.24 грн
1000+36.80 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32436ADN-T5E3 sip32435_sip32436_sip32437.pdf
SIP32436ADN-T5E3
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32436ADN-T5E3 sip32435_sip32436_sip32437.pdf
SIP32436ADN-T5E3
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+81.73 грн
10+56.77 грн
25+51.32 грн
100+42.54 грн
250+39.86 грн
500+38.24 грн
1000+36.80 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32436BDN-T5E3 sip32435_sip32436_sip32437.pdf
SIP32436BDN-T5E3
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32436BDN-T5E3 sip32435_sip32436_sip32437.pdf
SIP32436BDN-T5E3
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+81.73 грн
10+56.77 грн
25+51.32 грн
100+42.54 грн
250+39.86 грн
500+38.24 грн
1000+36.80 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32437BDN-T5E3 sip32435_sip32436_sip32437.pdf
SIP32437BDN-T5E3
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIP32437BDN-T5E3 sip32435_sip32436_sip32437.pdf
SIP32437BDN-T5E3
Виробник: Vishay Siliconix
Description: 10M EFUSE WITH PROGRAMMABLE TRAN
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 9.2mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 2458 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+81.73 грн
10+56.77 грн
25+51.32 грн
100+42.54 грн
250+39.86 грн
500+38.24 грн
1000+36.80 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32440BDN-T1E4 sip32440.pdf
SIP32440BDN-T1E4
Виробник: Vishay Siliconix
Description: IC POWER SW 10-DFN
Features: Auto Restart, Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SIP32440BDN-T1E4 sip32440.pdf
SIP32440BDN-T1E4
Виробник: Vishay Siliconix
Description: IC POWER SW 10-DFN
Features: Auto Restart, Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+93.63 грн
10+65.64 грн
25+59.51 грн
100+49.44 грн
250+46.39 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32440ADN-T1E4 sip32440.pdf
SIP32440ADN-T1E4
Виробник: Vishay Siliconix
Description: IC POWER SW 10-DFN
Features: Latch Function, Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+45.85 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SIP32440ADN-T1E4 sip32440.pdf
SIP32440ADN-T1E4
Виробник: Vishay Siliconix
Description: IC POWER SW 10-DFN
Features: Latch Function, Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 27V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
на замовлення 3142 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+93.63 грн
10+65.64 грн
25+59.51 грн
100+49.44 грн
250+46.39 грн
500+44.55 грн
1000+43.11 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SIP32440BEVB sip32440.pdf
Виробник: Vishay Siliconix
Description: EVAL BOARD FOR SIP32440
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: SIP32440B
Embedded: No
товару немає в наявності
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SIP32437BEVB sip32435_sip32436_sip32437.pdf
Виробник: Vishay Siliconix
Description: SIP32437B EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32437B
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
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SIP32436AEVB sic3243x_usermanual.pdf
Виробник: Vishay Siliconix
Description: SIP32436A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32436A
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
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SIP32433AEVB sip32433.pdf
Виробник: Vishay Siliconix
Description: SIP32433 EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32433A
Embedded: No
товару немає в наявності
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SIP32437AEVB sic3243x_usermanual.pdf
Виробник: Vishay Siliconix
Description: SIP32437A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32437A
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIP32436BEVB sic3243x_usermanual.pdf
Виробник: Vishay Siliconix
Description: SIP32436B EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32436B
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIP32433BEVB sip32433.pdf
Виробник: Vishay Siliconix
Description: SIP32433 EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32433B
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
SIP32440AEVB sip32440.pdf
Виробник: Vishay Siliconix
Description: SIP32440A EVALUATION BOARD
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Utilized IC / Part: SIP32440A
Primary Attributes: 3.3V ~ 23V Input Voltage
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
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SIHB24N80AE-T1-GE3 sihb24n80ae.pdf
SIHB24N80AE-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
SIHB155N60EF-GE3 sihb155n60ef.pdf
SIHB155N60EF-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 159mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SQ3427CEEV-T1_GE3 sq3427ceev.pdf
SQ3427CEEV-T1_GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+12.19 грн
6000+10.74 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.