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SIHF9630STRL-GE3 SIHF9630STRL-GE3 Vishay Siliconix sihf9630.pdf Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHF9630STRL-GE3 SIHF9630STRL-GE3 Vishay Siliconix sihf9630.pdf Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 783 шт:
термін постачання 21-31 дні (днів)
3+136.88 грн
10+83.99 грн
100+56.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQS966ENW-T1_GE3 SQS966ENW-T1_GE3 Vishay Siliconix sqs966enw.pdf Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+29.19 грн
6000+26.77 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS966ENW-T1_GE3 SQS966ENW-T1_GE3 Vishay Siliconix sqs966enw.pdf Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8641 шт:
термін постачання 21-31 дні (днів)
5+70.83 грн
10+55.64 грн
100+43.25 грн
500+34.41 грн
1000+28.03 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIR610DP-T1-RE3 SIR610DP-T1-RE3 Vishay Siliconix sir610dp.pdf Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIR610DP-T1-RE3 SIR610DP-T1-RE3 Vishay Siliconix sir610dp.pdf Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
на замовлення 1757 шт:
термін постачання 21-31 дні (днів)
2+160.75 грн
10+111.73 грн
100+81.74 грн
500+61.66 грн
1000+56.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SiR618DP-T1-GE3 SiR618DP-T1-GE3 Vishay Siliconix sir618dp.pdf Description: MOSFET N-CH 200V 14.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SiR618DP-T1-GE3 SiR618DP-T1-GE3 Vishay Siliconix sir618dp.pdf Description: MOSFET N-CH 200V 14.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIR624DP-T1-RE3 SIR624DP-T1-RE3 Vishay Siliconix sir624dp.pdf Description: MOSFET N-CH 200V 5.7A/18.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
товару немає в наявності
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SIA110DJ-T1-GE3 SIA110DJ-T1-GE3 Vishay Siliconix sia110dj.pdf Description: MOSFET N-CH 100V 5.4A/12A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+28.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIA110DJ-T1-GE3 SIA110DJ-T1-GE3 Vishay Siliconix sia110dj.pdf Description: MOSFET N-CH 100V 5.4A/12A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
на замовлення 5330 шт:
термін постачання 21-31 дні (днів)
3+108.23 грн
10+65.67 грн
100+43.58 грн
500+32.00 грн
1000+29.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI4490DY-T1-GE3 SI4490DY-T1-GE3 Vishay Siliconix si4490dy.pdf Description: MOSFET N-CH 200V 2.85A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
товару немає в наявності
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SISH114ADN-T1-GE3 SISH114ADN-T1-GE3 Vishay Siliconix tf-sish114adn-t1-ge3.pdf Description: MOSFET N-CH 30V 18A/35A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+17.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SISH114ADN-T1-GE3 SISH114ADN-T1-GE3 Vishay Siliconix tf-sish114adn-t1-ge3.pdf Description: MOSFET N-CH 30V 18A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
на замовлення 5982 шт:
термін постачання 21-31 дні (днів)
10+33.42 грн
11+29.27 грн
100+27.18 грн
500+24.33 грн
1000+22.06 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SQJQ131EL-T1_GE3 SQJQ131EL-T1_GE3 Vishay Siliconix sqjq131el.pdf Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJQ131EL-T1_GE3 SQJQ131EL-T1_GE3 Vishay Siliconix sqjq131el.pdf Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Qualification: AEC-Q101
на замовлення 1229 шт:
термін постачання 21-31 дні (днів)
1+327.87 грн
10+208.06 грн
100+146.89 грн
500+113.36 грн
1000+105.49 грн
В кошику  од. на суму  грн.
IRFR9014PBF-BE3 IRFR9014PBF-BE3 Vishay Siliconix sihfr901.pdf Description: P-CHANNEL 60V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 2984 шт:
термін постачання 21-31 дні (днів)
4+104.25 грн
75+80.47 грн
150+63.77 грн
525+50.72 грн
1050+41.32 грн
2025+38.90 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFR9120PBF-BE3 IRFR9120PBF-BE3 Vishay Siliconix sihfr912.pdf Description: P-CHANNEL 100V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+166.32 грн
75+73.23 грн
150+69.37 грн
525+51.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SI1553CDL-T1-BE3 SI1553CDL-T1-BE3 Vishay Siliconix si1553cdl.pdf Description: MOSFET N/P-CH 20V 0.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta), 340mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
товару немає в наявності
В кошику  од. на суму  грн.
SI1553CDL-T1-BE3 SI1553CDL-T1-BE3 Vishay Siliconix si1553cdl.pdf Description: MOSFET N/P-CH 20V 0.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta), 340mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 2370 шт:
термін постачання 21-31 дні (днів)
8+44.57 грн
12+26.82 грн
100+16.00 грн
500+12.14 грн
1000+10.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SIS112LDN-T1-GE3 SIS112LDN-T1-GE3 Vishay Siliconix sis112ldn.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+18.66 грн
6000+17.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIS112LDN-T1-GE3 SIS112LDN-T1-GE3 Vishay Siliconix sis112ldn.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
7+49.34 грн
10+41.00 грн
100+28.37 грн
500+22.25 грн
1000+18.93 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SIHF18N50C-E3 SIHF18N50C-E3 Vishay Siliconix SIHP18N50C%2C%20SIHF18N50C.pdf Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG70N60AEF-GE3 SIHG70N60AEF-GE3 Vishay Siliconix sihg70n60aef.pdf Description: MOSFET N-CH 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5348 pF @ 100 V
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
1+806.16 грн
10+628.55 грн
100+474.81 грн
В кошику  од. на суму  грн.
SIHFR220TRL-GE3 SIHFR220TRL-GE3 Vishay Siliconix sihfr220.pdf Description: MOSFET N-CH 200V 4.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SQS140ELNW-T1_GE3 SQS140ELNW-T1_GE3 Vishay Siliconix sqs140elnw.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4051 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQS140ELNW-T1_GE3 SQS140ELNW-T1_GE3 Vishay Siliconix sqs140elnw.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4051 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2848 шт:
термін постачання 21-31 дні (днів)
4+95.50 грн
10+64.22 грн
100+49.93 грн
500+41.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SUM60061EL-GE3 SUM60061EL-GE3 Vishay Siliconix sum60061el.pdf Description: P-CHANNEL 80 V (D-S) MOSFET D2PA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+195.58 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
SUM60061EL-GE3 SUM60061EL-GE3 Vishay Siliconix sum60061el.pdf Description: P-CHANNEL 80 V (D-S) MOSFET D2PA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
на замовлення 825 шт:
термін постачання 21-31 дні (днів)
1+471.92 грн
10+314.89 грн
100+228.30 грн
В кошику  од. на суму  грн.
SISH112DN-T1-GE3 SISH112DN-T1-GE3 Vishay Siliconix sish112dn.pdf Description: MOSFET N-CH 30V 11.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+41.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SISH112DN-T1-GE3 SISH112DN-T1-GE3 Vishay Siliconix sish112dn.pdf Description: MOSFET N-CH 30V 11.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
на замовлення 5502 шт:
термін постачання 21-31 дні (днів)
3+133.70 грн
10+90.12 грн
100+62.07 грн
500+46.30 грн
1000+42.45 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISH116DN-T1-GE3 SISH116DN-T1-GE3 Vishay Siliconix sish116dn.pdf Description: MOSFET N-CH 40V 10.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+51.44 грн
6000+48.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SISH116DN-T1-GE3 SISH116DN-T1-GE3 Vishay Siliconix sish116dn.pdf Description: MOSFET N-CH 40V 10.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3+147.22 грн
10+98.78 грн
100+75.49 грн
500+56.76 грн
1000+52.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISH110DN-T1-GE3 SISH110DN-T1-GE3 Vishay Siliconix sish110dn.pdf Description: MOSFET N-CH 20V 13.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
товару немає в наявності
В кошику  од. на суму  грн.
SISH110DN-T1-GE3 SISH110DN-T1-GE3 Vishay Siliconix sish110dn.pdf Description: MOSFET N-CH 20V 13.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF720 IRF720 Vishay Siliconix 91043.pdf description Description: MOSFET N-CH 400V 3.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SI1902CDL-T1-BE3 SI1902CDL-T1-BE3 Vishay Siliconix si1902cdl.pdf Description: MOSFET 2N-CH 20V 1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta), 420mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.72 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1902CDL-T1-BE3 SI1902CDL-T1-BE3 Vishay Siliconix si1902cdl.pdf Description: MOSFET 2N-CH 20V 1A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta), 420mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 5985 шт:
термін постачання 21-31 дні (днів)
8+42.18 грн
13+24.29 грн
100+14.09 грн
500+11.32 грн
1000+9.68 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SQJQ184E-T1_GE3 SQJQ184E-T1_GE3 Vishay Siliconix sqjq184e.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16010 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+120.86 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQJQ184E-T1_GE3 SQJQ184E-T1_GE3 Vishay Siliconix sqjq184e.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16010 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4703 шт:
термін постачання 21-31 дні (днів)
1+341.40 грн
10+217.56 грн
100+154.05 грн
500+119.14 грн
1000+110.97 грн
В кошику  од. на суму  грн.
IRFR9120 IRFR9120 Vishay Siliconix sihfr912.pdf Description: MOSFET P-CH 100V 5.6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHLR120-GE3 SIHLR120-GE3 Vishay Siliconix sihlr120.pdf Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SIR5607DP-T1-RE3 SIR5607DP-T1-RE3 Vishay Siliconix sir5607dp.pdf Description: P-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22.2A (Ta), 90.9A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
SIR5607DP-T1-RE3 SIR5607DP-T1-RE3 Vishay Siliconix sir5607dp.pdf Description: P-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22.2A (Ta), 90.9A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 30 V
на замовлення 434 шт:
термін постачання 21-31 дні (днів)
2+254.66 грн
10+169.82 грн
100+118.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SiC645ER-T1-GE3 SiC645ER-T1-GE3 Vishay Siliconix sic645.pdf Description: IC HALF BRIDGE DRVR PWR MLP55-32
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.75 ~ 5.25V
Rds On (Typ): 0.76mOhm LS, 3.6mOhm HS
Applications: Synchronous Buck Converters, Voltage Regulators
Technology: NMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-32 Double Cooling
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
товару немає в наявності
В кошику  од. на суму  грн.
SiC645ER-T1-GE3 SiC645ER-T1-GE3 Vishay Siliconix sic645.pdf Description: IC HALF BRIDGE DRVR PWR MLP55-32
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Status Flag
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.75 ~ 5.25V
Rds On (Typ): 0.76mOhm LS, 3.6mOhm HS
Applications: Synchronous Buck Converters, Voltage Regulators
Technology: NMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-32 Double Cooling
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
на замовлення 1992 шт:
термін постачання 21-31 дні (днів)
2+293.65 грн
10+254.27 грн
25+240.35 грн
100+195.49 грн
250+185.47 грн
500+166.42 грн
1000+138.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIA4446DJ-T1-GE3 SIA4446DJ-T1-GE3 Vishay Siliconix sia4446dj.pdf Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
SIA4446DJ-T1-GE3 SIA4446DJ-T1-GE3 Vishay Siliconix sia4446dj.pdf Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V
на замовлення 2704 шт:
термін постачання 21-31 дні (днів)
7+50.14 грн
10+41.46 грн
100+28.69 грн
500+22.50 грн
1000+19.15 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SQ2308FES-T1_GE3 Vishay Siliconix sq2308fes.pdf Description: MOSFET N-CH 60V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IRFR224TRPBF-BE3 IRFR224TRPBF-BE3 Vishay Siliconix sihfr224.pdf Description: N-CHANNEL 250V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
3+109.82 грн
10+87.52 грн
100+69.68 грн
500+55.32 грн
1000+46.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIS606BDN-T1-GE3 SIS606BDN-T1-GE3 Vishay Siliconix sis606bdn.pdf Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+42.37 грн
6000+38.86 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIS606BDN-T1-GE3 SIS606BDN-T1-GE3 Vishay Siliconix sis606bdn.pdf Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
на замовлення 6370 шт:
термін постачання 21-31 дні (днів)
4+101.86 грн
10+80.77 грн
100+62.78 грн
500+49.94 грн
1000+40.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJA26EP-T1_GE3 SQJA26EP-T1_GE3 Vishay Siliconix sqja26ep.pdf Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tc)
Rds On (Max) @ Id, Vgs: 0.77mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9778 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+58.04 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJA26EP-T1_GE3 SQJA26EP-T1_GE3 Vishay Siliconix sqja26ep.pdf Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tc)
Rds On (Max) @ Id, Vgs: 0.77mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9778 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+128.13 грн
10+103.00 грн
100+81.94 грн
500+65.07 грн
1000+55.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIB4316EDK-T1-GE3 SIB4316EDK-T1-GE3 Vishay Siliconix sib4316edk.pdf Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 10V
Power Dissipation (Max): 1.9W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.43 грн
6000+9.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIB4316EDK-T1-GE3 SIB4316EDK-T1-GE3 Vishay Siliconix sib4316edk.pdf Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 10V
Power Dissipation (Max): 1.9W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
на замовлення 8950 шт:
термін постачання 21-31 дні (днів)
11+31.04 грн
13+25.44 грн
100+17.69 грн
500+12.97 грн
1000+10.54 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SQA470EJ-T1_GE3 SQA470EJ-T1_GE3 Vishay Siliconix sqa470ej.pdf Description: MOSFET N-CH 30V 2.25A PPAK SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQA470EJ-T1_GE3 SQA470EJ-T1_GE3 Vishay Siliconix sqa470ej.pdf Description: MOSFET N-CH 30V 2.25A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
8+45.36 грн
10+37.24 грн
100+25.88 грн
500+18.96 грн
1000+15.41 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SIR5211DP-T1-GE3 SIR5211DP-T1-GE3 Vishay Siliconix sir5211dp.pdf Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+27.73 грн
6000+24.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR5211DP-T1-GE3 SIR5211DP-T1-GE3 Vishay Siliconix sir5211dp.pdf Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
4+105.84 грн
10+64.14 грн
100+42.68 грн
500+31.40 грн
1000+28.61 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHF9630STRL-GE3 sihf9630.pdf
SIHF9630STRL-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товару немає в наявності
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SIHF9630STRL-GE3 sihf9630.pdf
SIHF9630STRL-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 783 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.88 грн
10+83.99 грн
100+56.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQS966ENW-T1_GE3 sqs966enw.pdf
SQS966ENW-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+29.19 грн
6000+26.77 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS966ENW-T1_GE3 sqs966enw.pdf
SQS966ENW-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8641 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.83 грн
10+55.64 грн
100+43.25 грн
500+34.41 грн
1000+28.03 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIR610DP-T1-RE3 sir610dp.pdf
SIR610DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
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SIR610DP-T1-RE3 sir610dp.pdf
SIR610DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
на замовлення 1757 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+160.75 грн
10+111.73 грн
100+81.74 грн
500+61.66 грн
1000+56.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SiR618DP-T1-GE3 sir618dp.pdf
SiR618DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 14.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
товару немає в наявності
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SiR618DP-T1-GE3 sir618dp.pdf
SiR618DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 14.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
товару немає в наявності
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SIR624DP-T1-RE3 sir624dp.pdf
SIR624DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
товару немає в наявності
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SIA110DJ-T1-GE3 sia110dj.pdf
SIA110DJ-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5.4A/12A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+28.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIA110DJ-T1-GE3 sia110dj.pdf
SIA110DJ-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5.4A/12A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
на замовлення 5330 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+108.23 грн
10+65.67 грн
100+43.58 грн
500+32.00 грн
1000+29.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI4490DY-T1-GE3 si4490dy.pdf
SI4490DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.85A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
товару немає в наявності
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SISH114ADN-T1-GE3 tf-sish114adn-t1-ge3.pdf
SISH114ADN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 18A/35A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SISH114ADN-T1-GE3 tf-sish114adn-t1-ge3.pdf
SISH114ADN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 18A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
на замовлення 5982 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.42 грн
11+29.27 грн
100+27.18 грн
500+24.33 грн
1000+22.06 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SQJQ131EL-T1_GE3 sqjq131el.pdf
SQJQ131EL-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
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SQJQ131EL-T1_GE3 sqjq131el.pdf
SQJQ131EL-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Qualification: AEC-Q101
на замовлення 1229 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+327.87 грн
10+208.06 грн
100+146.89 грн
500+113.36 грн
1000+105.49 грн
В кошику  од. на суму  грн.
IRFR9014PBF-BE3 sihfr901.pdf
IRFR9014PBF-BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 60V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 2984 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.25 грн
75+80.47 грн
150+63.77 грн
525+50.72 грн
1050+41.32 грн
2025+38.90 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFR9120PBF-BE3 sihfr912.pdf
IRFR9120PBF-BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 100V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.32 грн
75+73.23 грн
150+69.37 грн
525+51.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SI1553CDL-T1-BE3 si1553cdl.pdf
SI1553CDL-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta), 340mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
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SI1553CDL-T1-BE3 si1553cdl.pdf
SI1553CDL-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta), 340mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 2370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.57 грн
12+26.82 грн
100+16.00 грн
500+12.14 грн
1000+10.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SIS112LDN-T1-GE3 sis112ldn.pdf
SIS112LDN-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.66 грн
6000+17.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIS112LDN-T1-GE3 sis112ldn.pdf
SIS112LDN-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.34 грн
10+41.00 грн
100+28.37 грн
500+22.25 грн
1000+18.93 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SIHF18N50C-E3 SIHP18N50C%2C%20SIHF18N50C.pdf
SIHF18N50C-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
товару немає в наявності
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SIHG70N60AEF-GE3 sihg70n60aef.pdf
SIHG70N60AEF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5348 pF @ 100 V
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+806.16 грн
10+628.55 грн
100+474.81 грн
В кошику  од. на суму  грн.
SIHFR220TRL-GE3 sihfr220.pdf
SIHFR220TRL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
товару немає в наявності
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SQS140ELNW-T1_GE3 sqs140elnw.pdf
SQS140ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4051 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQS140ELNW-T1_GE3 sqs140elnw.pdf
SQS140ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4051 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2848 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.50 грн
10+64.22 грн
100+49.93 грн
500+41.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SUM60061EL-GE3 sum60061el.pdf
SUM60061EL-GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+195.58 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
SUM60061EL-GE3 sum60061el.pdf
SUM60061EL-GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
на замовлення 825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+471.92 грн
10+314.89 грн
100+228.30 грн
В кошику  од. на суму  грн.
SISH112DN-T1-GE3 sish112dn.pdf
SISH112DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+41.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SISH112DN-T1-GE3 sish112dn.pdf
SISH112DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
на замовлення 5502 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.70 грн
10+90.12 грн
100+62.07 грн
500+46.30 грн
1000+42.45 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISH116DN-T1-GE3 sish116dn.pdf
SISH116DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 10.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+51.44 грн
6000+48.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SISH116DN-T1-GE3 sish116dn.pdf
SISH116DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 10.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.22 грн
10+98.78 грн
100+75.49 грн
500+56.76 грн
1000+52.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISH110DN-T1-GE3 sish110dn.pdf
SISH110DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
товару немає в наявності
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SISH110DN-T1-GE3 sish110dn.pdf
SISH110DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
товару немає в наявності
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IRF720 description 91043.pdf
IRF720
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 3.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
товару немає в наявності
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SI1902CDL-T1-BE3 si1902cdl.pdf
SI1902CDL-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta), 420mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.72 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1902CDL-T1-BE3 si1902cdl.pdf
SI1902CDL-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta), 420mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 5985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.18 грн
13+24.29 грн
100+14.09 грн
500+11.32 грн
1000+9.68 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SQJQ184E-T1_GE3 sqjq184e.pdf
SQJQ184E-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16010 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+120.86 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQJQ184E-T1_GE3 sqjq184e.pdf
SQJQ184E-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16010 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4703 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+341.40 грн
10+217.56 грн
100+154.05 грн
500+119.14 грн
1000+110.97 грн
В кошику  од. на суму  грн.
IRFR9120 sihfr912.pdf
IRFR9120
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
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SIHLR120-GE3 sihlr120.pdf
SIHLR120-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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SIR5607DP-T1-RE3 sir5607dp.pdf
SIR5607DP-T1-RE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22.2A (Ta), 90.9A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 30 V
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SIR5607DP-T1-RE3 sir5607dp.pdf
SIR5607DP-T1-RE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22.2A (Ta), 90.9A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 30 V
на замовлення 434 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+254.66 грн
10+169.82 грн
100+118.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SiC645ER-T1-GE3 sic645.pdf
SiC645ER-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRVR PWR MLP55-32
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.75 ~ 5.25V
Rds On (Typ): 0.76mOhm LS, 3.6mOhm HS
Applications: Synchronous Buck Converters, Voltage Regulators
Technology: NMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-32 Double Cooling
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
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SiC645ER-T1-GE3 sic645.pdf
SiC645ER-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRVR PWR MLP55-32
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Status Flag
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.75 ~ 5.25V
Rds On (Typ): 0.76mOhm LS, 3.6mOhm HS
Applications: Synchronous Buck Converters, Voltage Regulators
Technology: NMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-32 Double Cooling
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
на замовлення 1992 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+293.65 грн
10+254.27 грн
25+240.35 грн
100+195.49 грн
250+185.47 грн
500+166.42 грн
1000+138.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIA4446DJ-T1-GE3 sia4446dj.pdf
SIA4446DJ-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V
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SIA4446DJ-T1-GE3 sia4446dj.pdf
SIA4446DJ-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V
на замовлення 2704 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.14 грн
10+41.46 грн
100+28.69 грн
500+22.50 грн
1000+19.15 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SQ2308FES-T1_GE3 sq2308fes.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V
Qualification: AEC-Q101
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IRFR224TRPBF-BE3 sihfr224.pdf
IRFR224TRPBF-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 250V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+109.82 грн
10+87.52 грн
100+69.68 грн
500+55.32 грн
1000+46.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIS606BDN-T1-GE3 sis606bdn.pdf
SIS606BDN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+42.37 грн
6000+38.86 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIS606BDN-T1-GE3 sis606bdn.pdf
SIS606BDN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
на замовлення 6370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.86 грн
10+80.77 грн
100+62.78 грн
500+49.94 грн
1000+40.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJA26EP-T1_GE3 sqja26ep.pdf
SQJA26EP-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tc)
Rds On (Max) @ Id, Vgs: 0.77mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9778 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+58.04 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJA26EP-T1_GE3 sqja26ep.pdf
SQJA26EP-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tc)
Rds On (Max) @ Id, Vgs: 0.77mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9778 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+128.13 грн
10+103.00 грн
100+81.94 грн
500+65.07 грн
1000+55.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIB4316EDK-T1-GE3 sib4316edk.pdf
SIB4316EDK-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 10V
Power Dissipation (Max): 1.9W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.43 грн
6000+9.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIB4316EDK-T1-GE3 sib4316edk.pdf
SIB4316EDK-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 10V
Power Dissipation (Max): 1.9W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
на замовлення 8950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.04 грн
13+25.44 грн
100+17.69 грн
500+12.97 грн
1000+10.54 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SQA470EJ-T1_GE3 sqa470ej.pdf
SQA470EJ-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 2.25A PPAK SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
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SQA470EJ-T1_GE3 sqa470ej.pdf
SQA470EJ-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 2.25A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.36 грн
10+37.24 грн
100+25.88 грн
500+18.96 грн
1000+15.41 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SIR5211DP-T1-GE3 sir5211dp.pdf
SIR5211DP-T1-GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+27.73 грн
6000+24.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR5211DP-T1-GE3 sir5211dp.pdf
SIR5211DP-T1-GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+105.84 грн
10+64.14 грн
100+42.68 грн
500+31.40 грн
1000+28.61 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
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