Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5612) > Сторінка 94 з 94
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
| G3F40MT12K | GeneSiC Semiconductor | 1200V 40m TO-247-4 G3F SiC MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| G3F20MT12K | GeneSiC Semiconductor | 1200V 20m TO-247-4 G3F SiC MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MBR2X060A180 | GeneSiC Semiconductor |
Schottky Rectifier Module Type 120 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MBR2X060A120 | GeneSiC Semiconductor |
Schottky Rectifier Module Type 120 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MBR2X060A150 | GeneSiC Semiconductor |
Schottky Rectifier Vrrm 150 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MBR2X060A080 | GeneSiC Semiconductor |
Schottky Rectifier Module Type 120 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MBRH20060R | GeneSiC Semiconductor |
Rectifier Diode Schottky 60V 200A 2-Pin Case D-67 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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FR70BR02 | GeneSiC Semiconductor |
Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| S70YR | GeneSiC Semiconductor |
Diode Switching 1.6KV 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| S70D | GeneSiC Semiconductor |
Rectifier Diode Switching 200V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| S70M | GeneSiC Semiconductor |
Rectifier Diode Switching 1KV 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| FR70J05 | GeneSiC Semiconductor |
Diode Switching 600V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| S70JR | GeneSiC Semiconductor |
Rectifier Diode Switching 600V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| S70DR | GeneSiC Semiconductor |
Rectifier Diode Switching 200V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| S70V | GeneSiC Semiconductor |
Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| S70BR | GeneSiC Semiconductor |
Rectifier Diode Switching 100V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| S70B | GeneSiC Semiconductor |
Rectifier Diode Switching 100V 70A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MBR6040R | GeneSiC Semiconductor |
Rectifier Diode Schottky 40V 60A 2-Pin DO-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
G3R20MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W Mounting: THT Case: TO247-4 Gate-source voltage: -5...15V Gate charge: 219nC On-state resistance: 20mΩ Type of transistor: N-MOSFET Features of semiconductor devices: Kelvin terminal Drain current: 90A Technology: G3R™; SiC Kind of channel: enhancement Pulsed drain current: 240A Power dissipation: 542W Kind of package: tube Drain-source voltage: 1.2kV Polarisation: unipolar |
на замовлення 569 шт: термін постачання 21-30 дні (днів) |
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G3R30MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 155nC On-state resistance: 30mΩ Drain current: 63A Pulsed drain current: 200A Power dissipation: 400W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
G3R40MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 106nC On-state resistance: 40mΩ Drain current: 50A Pulsed drain current: 140A Power dissipation: 333W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 |
на замовлення 279 шт: термін постачання 21-30 дні (днів) |
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G3R75MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 54nC On-state resistance: 75mΩ Drain current: 29A Pulsed drain current: 80A Power dissipation: 207W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 |
на замовлення 453 шт: термін постачання 21-30 дні (днів) |
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G2R1000MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7 Mounting: SMD Technology: G2R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V On-state resistance: 1Ω Drain current: 4A Pulsed drain current: 8A Power dissipation: 54W Drain-source voltage: 1.7kV Kind of package: tube Case: TO263-7 Kind of channel: enhancement |
на замовлення 187 шт: термін постачання 21-30 дні (днів) |
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G3R20MT12N | GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFETDescription: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 74A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 240A Power dissipation: 365W Technology: G3R™; SiC Gate-source voltage: -5...15V Mechanical mounting: screw Kind of channel: enhancement |
на замовлення 107 шт: термін постачання 21-30 дні (днів) |
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G3R20MT17N | GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFETDescription: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.7kV Drain current: 70A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 300A Power dissipation: 523W Technology: G3R™; SiC Gate-source voltage: -5...15V Mechanical mounting: screw Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
G3R450MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 6A Pulsed drain current: 16A Power dissipation: 91W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal |
на замовлення 841 шт: термін постачання 21-30 дні (днів) |
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GC10MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube Max. forward voltage: 1.5V Load current: 10A Max. forward impulse current: 80A Max. off-state voltage: 1.2kV Mounting: THT Features of semiconductor devices: MPS Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Case: TO220-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
GC10MPS12-252 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A Max. forward voltage: 1.5V Load current: 10A Max. forward impulse current: 80A Max. off-state voltage: 1.2kV Mounting: SMD Features of semiconductor devices: MPS Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Case: TO252-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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GB20SLT12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.5V Max. forward impulse current: 160A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
GB50SLT12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.5V Max. forward impulse current: 0.4kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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GD30MPS06J | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-7; SiC; SMD; 650V; 30A; tube Case: TO263-7 Mounting: SMD Kind of package: tube Max. forward voltage: 1.5V Load current: 30A Max. forward impulse current: 0.168kA Max. off-state voltage: 650V Technology: SiC Features of semiconductor devices: MPS Type of diode: Schottky rectifying Semiconductor structure: single diode |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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G3R20MT17K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W Mounting: THT Case: TO247-4 Gate-source voltage: -5...15V Gate charge: 400nC On-state resistance: 20mΩ Type of transistor: N-MOSFET Features of semiconductor devices: Kelvin terminal Drain current: 88A Technology: G3R™; SiC Kind of channel: enhancement Pulsed drain current: 300A Power dissipation: 809W Kind of package: tube Drain-source voltage: 1.7kV Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. |
| G3F40MT12K |
Виробник: GeneSiC Semiconductor
1200V 40m TO-247-4 G3F SiC MOSFET
1200V 40m TO-247-4 G3F SiC MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| G3F20MT12K |
Виробник: GeneSiC Semiconductor
1200V 20m TO-247-4 G3F SiC MOSFET
1200V 20m TO-247-4 G3F SiC MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X060A180 |
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Виробник: GeneSiC Semiconductor
Schottky Rectifier Module Type 120 A
Schottky Rectifier Module Type 120 A
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X060A120 |
![]() |
Виробник: GeneSiC Semiconductor
Schottky Rectifier Module Type 120 A
Schottky Rectifier Module Type 120 A
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X060A150 |
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Виробник: GeneSiC Semiconductor
Schottky Rectifier Vrrm 150 V
Schottky Rectifier Vrrm 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X060A080 |
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Виробник: GeneSiC Semiconductor
Schottky Rectifier Module Type 120 A
Schottky Rectifier Module Type 120 A
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20060R |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Schottky 60V 200A 2-Pin Case D-67
Rectifier Diode Schottky 60V 200A 2-Pin Case D-67
товару немає в наявності
В кошику
од. на суму грн.
| FR70BR02 |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5
Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70YR |
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Виробник: GeneSiC Semiconductor
Diode Switching 1.6KV 70A 2-Pin DO-5
Diode Switching 1.6KV 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70D |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 200V 70A 2-Pin DO-5
Rectifier Diode Switching 200V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70M |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 1KV 70A 2-Pin DO-5
Rectifier Diode Switching 1KV 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| FR70J05 |
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Виробник: GeneSiC Semiconductor
Diode Switching 600V 70A 2-Pin DO-5
Diode Switching 600V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70JR |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 600V 70A 2-Pin DO-5
Rectifier Diode Switching 600V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70DR |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 200V 70A 2-Pin DO-5
Rectifier Diode Switching 200V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70V |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70BR |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
Rectifier Diode Switching 100V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| S70B |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
Rectifier Diode Switching 100V 70A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| MBR6040R |
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Виробник: GeneSiC Semiconductor
Rectifier Diode Schottky 40V 60A 2-Pin DO-5
Rectifier Diode Schottky 40V 60A 2-Pin DO-5
товару немає в наявності
В кошику
од. на суму грн.
| G3R20MT12K |
![]() |
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Mounting: THT
Case: TO247-4
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Features of semiconductor devices: Kelvin terminal
Drain current: 90A
Technology: G3R™; SiC
Kind of channel: enhancement
Pulsed drain current: 240A
Power dissipation: 542W
Kind of package: tube
Drain-source voltage: 1.2kV
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Mounting: THT
Case: TO247-4
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Features of semiconductor devices: Kelvin terminal
Drain current: 90A
Technology: G3R™; SiC
Kind of channel: enhancement
Pulsed drain current: 240A
Power dissipation: 542W
Kind of package: tube
Drain-source voltage: 1.2kV
Polarisation: unipolar
на замовлення 569 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2398.61 грн |
| 3+ | 2149.37 грн |
| G3R30MT12K |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
товару немає в наявності
В кошику
од. на суму грн.
| G3R40MT12K |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 279 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1158.68 грн |
| G3R75MT12K |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 453 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 624.38 грн |
| G2R1000MT17J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Technology: G2R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of package: tube
Case: TO263-7
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Technology: G2R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of package: tube
Case: TO263-7
Kind of channel: enhancement
на замовлення 187 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 419.49 грн |
| 3+ | 350.98 грн |
| G3R20MT12N |
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Виробник: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
на замовлення 107 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3786.90 грн |
| G3R20MT17N |
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Виробник: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
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| G3R450MT17J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
на замовлення 841 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 479.54 грн |
| GC10MPS12-220 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Mounting: THT
Features of semiconductor devices: MPS
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Mounting: THT
Features of semiconductor devices: MPS
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
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| GC10MPS12-252 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Mounting: SMD
Features of semiconductor devices: MPS
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO252-2
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Mounting: SMD
Features of semiconductor devices: MPS
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO252-2
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| GB20SLT12-247 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 160A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 160A
Kind of package: tube
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| GB50SLT12-247 |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.4kA
Kind of package: tube
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| GD30MPS06J |
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Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 650V; 30A; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 30A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
Technology: SiC
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 650V; 30A; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 30A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
Technology: SiC
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Semiconductor structure: single diode
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 356.79 грн |
| 5+ | 321.46 грн |
| 25+ | 315.72 грн |
| G3R20MT17K |
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Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Mounting: THT
Case: TO247-4
Gate-source voltage: -5...15V
Gate charge: 400nC
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Features of semiconductor devices: Kelvin terminal
Drain current: 88A
Technology: G3R™; SiC
Kind of channel: enhancement
Pulsed drain current: 300A
Power dissipation: 809W
Kind of package: tube
Drain-source voltage: 1.7kV
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Mounting: THT
Case: TO247-4
Gate-source voltage: -5...15V
Gate charge: 400nC
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Features of semiconductor devices: Kelvin terminal
Drain current: 88A
Technology: G3R™; SiC
Kind of channel: enhancement
Pulsed drain current: 300A
Power dissipation: 809W
Kind of package: tube
Drain-source voltage: 1.7kV
Polarisation: unipolar
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