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IR3476MTR1PBF IR3476MTR1PBF Infineon Technologies ir3476m.pdf?fileId=5546d462533600a4015355ccb922172b Description: IC REG BUCK ADJ 12A 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 27V
Topology: Buck
Supplier Device Package: 16-QFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
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IR3476MTRPBF IR3476MTRPBF Infineon Technologies ir3476m.pdf?fileId=5546d462533600a4015355ccb922172b Description: IC REG BUCK ADJUSTABLE 12A 16QFN
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IR3477MTR1PBF IR3477MTR1PBF Infineon Technologies ir3477m.pdf?fileId=5546d462533600a4015355ccc110172d Description: IC REG BUCK ADJUSTABLE 15A 16QFN
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IR3865MTR1PBF IR3865MTR1PBF Infineon Technologies IR3865MPBF.pdf Description: IC REG BUCK ADJ 10A 17POWERQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PowerQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
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IRF6702M2DTR1PBF Infineon Technologies IRF6702M2DTR(1)PBF.pdf Description: MOSFET 2N-CH 30V 15A DIRECTFET
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IRF6702M2DTRPBF Infineon Technologies IRF6702M2DTR(1)PBF.pdf Description: MOSFET 2N-CH 30V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DIRECTFET™ MA
Part Status: Obsolete
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IRF6708S2TR1PBF IRF6708S2TR1PBF Infineon Technologies IRF6708S2TR(1)PBF.pdf Description: MOSFET N-CH 30V 13A DIRECTFET S1
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IRF6708S2TRPBF IRF6708S2TRPBF Infineon Technologies IRF6708S2TR(1)PBF.pdf Description: MOSFET N-CH 30V 13A DIRECTFET S1
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IRF6728MTR1PBF IRF6728MTR1PBF Infineon Technologies irf6728mpbf.pdf?fileId=5546d462533600a4015355ed73701a9c Description: MOSFET N-CH 30V 23A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V
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IRF6728MTRPBF IRF6728MTRPBF Infineon Technologies irf6728mpbf.pdf?fileId=5546d462533600a4015355ed73701a9c Description: MOSFET N-CH 30V 23A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V
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IRF9332PBF IRF9332PBF Infineon Technologies irf9332pbf.pdf?fileId=5546d462533600a40153561136b71d9f Description: MOSFET P-CH 30V 9.8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
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IRF9332TRPBF IRF9332TRPBF Infineon Technologies irf9332pbf.pdf?fileId=5546d462533600a40153561136b71d9f Description: MOSFET P-CH 30V 9.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
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IRF9358PBF IRF9358PBF Infineon Technologies irf9358pbf.pdf?fileId=5546d462533600a4015356114ffa1da5 Description: MOSFET 2P-CH 30V 9.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 9.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
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IRF9358TRPBF IRF9358TRPBF Infineon Technologies irf9358pbf.pdf?fileId=5546d462533600a4015356114ffa1da5 Description: MOSFET 2P-CH 30V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 9.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
4000+30.75 грн
8000+29.07 грн
Мінімальне замовлення: 4000
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IRF9392TRPBF IRF9392TRPBF Infineon Technologies IRF9392PBF.pdf Description: MOSFET P-CH 30V 9.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 7.8A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
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IRF9395MTR1PBF Infineon Technologies irf9395mpbf.pdf?fileId=5546d462533600a40153561198461db7 Description: MOSFET 2P-CH 30V 14A DIRECTFETMC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MC
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ MC
Part Status: Obsolete
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IRFB3607GPBF IRFB3607GPBF Infineon Technologies IRFB3607GPBF.pdf Description: MOSFET N-CH 75V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IRFH5104TR2PBF IRFH5104TR2PBF Infineon Technologies irfh5104pbf.pdf?fileId=5546d462533600a40153561add341ea4 Description: MOSFET N-CH 40V 24A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
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IRFH5104TRPBF IRFH5104TRPBF Infineon Technologies irfh5104pbf.pdf?fileId=5546d462533600a40153561add341ea4 Description: MOSFET N-CH 40V 24A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
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IRFH5204TRPBF IRFH5204TRPBF Infineon Technologies irfh5204pbf.pdf?fileId=5546d462533600a40153561af5511eaa Description: MOSFET N-CH 40V 22A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
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IRFH5215TRPBF IRFH5215TRPBF Infineon Technologies irfh5215pbf.pdf?fileId=5546d462533600a40153561b15111eb2 Description: MOSFET N-CH 150V 5A/27A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
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IRFH5220TRPBF IRFH5220TRPBF Infineon Technologies irfh5220pbf.pdf?fileId=5546d462533600a40153561b1bf41eb4 Description: MOSFET N-CH 200V 3.8A/20A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
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IRFH9310TRPBF IRFH9310TRPBF Infineon Technologies irfh9310pbf.pdf?fileId=5546d462533600a40153561fe1ae1f27 Description: MOSFET P-CH 30V 21A/40A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V
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IRFI4110GPBF IRFI4110GPBF Infineon Technologies irfi4110gpbf.pdf?fileId=5546d462533600a401535623f28d1f78 Description: MOSFET N-CH 100V 72A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 43A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9540 pF @ 50 V
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IRFI4121H-117P Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 100V 11A TO220-5
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
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IRFS4410ZTRLPBF IRFS4410ZTRLPBF Infineon Technologies irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a Description: MOSFET N-CH 100V 97A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+62.74 грн
1600+59.66 грн
2400+59.26 грн
Мінімальне замовлення: 800
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IRGP4066DPBF IRGP4066DPBF Infineon Technologies irgp4066dpbf.pdf?fileId=5546d462533600a401535655feed2454 Description: IGBT TRENCH 600V 140A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 155 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
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IRL6342TRPBF IRL6342TRPBF Infineon Technologies irl6342pbf.pdf?fileId=5546d462533600a40153565ffb7a2577 Description: MOSFET N-CH 30V 9.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+16.08 грн
8000+14.67 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRLHS6242TRPBF IRLHS6242TRPBF Infineon Technologies irlhs6242pbf.pdf?fileId=5546d462533600a401535663a52d25a9 Description: MOSFET N-CH 20V 10A/12A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
на замовлення 88000 шт:
термін постачання 21-31 дні (днів)
4000+10.56 грн
8000+9.47 грн
Мінімальне замовлення: 4000
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IRLHS6342TRPBF IRLHS6342TRPBF Infineon Technologies irlhs6342pbf.pdf?fileId=5546d462533600a401535663b52625ad Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
на замовлення 124000 шт:
термін постачання 21-31 дні (днів)
4000+14.30 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRLHS6376TRPBF IRLHS6376TRPBF Infineon Technologies irlhs6376pbf.pdf?fileId=5546d462533600a401535663bef425af Description: MOSFET 2N-CH 30V 3.6A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
на замовлення 112000 шт:
термін постачання 21-31 дні (днів)
4000+12.03 грн
8000+11.36 грн
20000+11.15 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRS2001MPBF IRS2001MPBF Infineon Technologies irs2001mpbf.pdf?fileId=5546d462533600a4015356759e20277c Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2053MTRPBF IRS2053MTRPBF Infineon Technologies IRS2053MPbF.pdf Description: IC LINE DRIVER 48MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Specifications: Class D
Applications: Pre-Amplifier
Supplier Device Package: 48-MLPQ (7x7)
Part Status: Obsolete
Number of Channels: 3
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IRS2113MPBF IRS2113MPBF Infineon Technologies irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS21844MPBF IRS21844MPBF Infineon Technologies irs21844mpbf.pdf?fileId=5546d462533600a401535676dfb027de Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS2302SPBF IRS2302SPBF Infineon Technologies Infineon-IRS2302S-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016a4e4998500c47 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)
3+118.29 грн
10+83.33 грн
95+67.50 грн
190+60.36 грн
285+58.87 грн
570+56.67 грн
1045+54.17 грн
2565+52.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRS25401PBF IRS25401PBF Infineon Technologies irs25401pbf.pdf?fileId=5546d462533600a40153567b06662826 Description: IC LED DRIVER CTRLR PWM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.260", 6.60mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-PDIP
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 16.6V
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IRS25411SPBF IRS25411SPBF Infineon Technologies irs25401pbf.pdf?fileId=5546d462533600a40153567b06662826 Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 16.6V
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IRS25411STRPBF IRS25411STRPBF Infineon Technologies irs25401pbf.pdf?fileId=5546d462533600a40153567b06662826 Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 16.6V
Part Status: Active
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IRS27951SPBF IRS27951SPBF Infineon Technologies irs27951s.pdf?fileId=5546d462533600a40153567b77792849 Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Discontinued at Digi-Key
Number of Outputs: 2
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IRS27951STRPBF IRS27951STRPBF Infineon Technologies irs27951s.pdf?fileId=5546d462533600a40153567b77792849 Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 2
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IRS27952SPBF IRS27952SPBF Infineon Technologies irs27951s.pdf?fileId=5546d462533600a40153567b77792849 Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 2
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IRS27952STRPBF IRS27952STRPBF Infineon Technologies irs27951s.pdf?fileId=5546d462533600a40153567b77792849 Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500Hz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+99.13 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BSZ0901NSIATMA1 BSZ0901NSIATMA1 Infineon Technologies BSZ0901NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f2550ff441cf9 Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+29.83 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ0904NSIATMA1 BSZ0904NSIATMA1 Infineon Technologies BSZ0904NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2a1ec7d90032 Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+21.10 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IKW50N60TAFKSA1 IKW50N60TAFKSA1 Infineon Technologies IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
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BSZ0901NSATMA1 BSZ0901NSATMA1 Infineon Technologies BSZ0901NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f20f7321863dd Description: MOSFET N-CH 30V 22A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
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BSZ0902NSIATMA1 BSZ0902NSIATMA1 Infineon Technologies BSZ0902NSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308e38cc9c33f9 Description: MOSFET N-CH 30V 21A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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IKW75N60TAFKSA1 IKW75N60TAFKSA1 Infineon Technologies IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25 Description: IGBT TRENCH/FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
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BSZ0901NSIATMA1 BSZ0901NSIATMA1 Infineon Technologies BSZ0901NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f2550ff441cf9 Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
на замовлення 13470 шт:
термін постачання 21-31 дні (днів)
3+119.88 грн
10+73.39 грн
100+49.20 грн
500+36.42 грн
1000+33.29 грн
2000+32.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSZ0904NSIATMA1 BSZ0904NSIATMA1 Infineon Technologies BSZ0904NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2a1ec7d90032 Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V
на замовлення 5610 шт:
термін постачання 21-31 дні (днів)
5+77.01 грн
10+46.02 грн
100+30.43 грн
500+22.08 грн
1000+20.00 грн
2000+18.46 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSZ0901NSATMA1 BSZ0901NSATMA1 Infineon Technologies BSZ0901NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f20f7321863dd Description: MOSFET N-CH 30V 22A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
на замовлення 3466 шт:
термін постачання 21-31 дні (днів)
4+100.03 грн
10+78.90 грн
100+61.36 грн
500+48.81 грн
1000+39.76 грн
2000+37.43 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY14B104NA-BA25I CY14B104NA-BA25I Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1415KV18-250BZCT CY7C1415KV18-250BZCT Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1513KV18-200BZXI CY7C1513KV18-200BZXI Infineon Technologies Infineon-CY7C1526KV18_CY7C1513KV18_CY7C1515KV18_72-Mbit_QDR(R)_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe15e1314b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C15632KV18-450BZXI CY7C15632KV18-450BZXI Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1565KV18-500BZXI CY7C1565KV18-500BZXI Infineon Technologies Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CY7C2563KV18-400BZXI CY7C2563KV18-400BZXI Infineon Technologies CY7C2561,63,65,76KV18.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 4M x 18
товару немає в наявності
В кошику  од. на суму  грн.
CY3210-24X33 Infineon Technologies Description: EVALUATION POD CY8C24X33
Packaging: Box
For Use With/Related Products: CY8C24x33
Accessory Type: Evaluation Pod (EvalPod)
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CY7C1308SV25C-167BZCT CY7C1308SV25C-167BZCT Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 165FBGA
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IR3476MTR1PBF ir3476m.pdf?fileId=5546d462533600a4015355ccb922172b
IR3476MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 12A 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 27V
Topology: Buck
Supplier Device Package: 16-QFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
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IR3476MTRPBF ir3476m.pdf?fileId=5546d462533600a4015355ccb922172b
IR3476MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 12A 16QFN
товару немає в наявності
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IR3477MTR1PBF ir3477m.pdf?fileId=5546d462533600a4015355ccc110172d
IR3477MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 15A 16QFN
товару немає в наявності
В кошику  од. на суму  грн.
IR3865MTR1PBF IR3865MPBF.pdf
IR3865MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 10A 17POWERQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PowerQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
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IRF6702M2DTR1PBF IRF6702M2DTR(1)PBF.pdf
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 15A DIRECTFET
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IRF6702M2DTRPBF IRF6702M2DTR(1)PBF.pdf
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DIRECTFET™ MA
Part Status: Obsolete
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IRF6708S2TR1PBF IRF6708S2TR(1)PBF.pdf
IRF6708S2TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A DIRECTFET S1
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IRF6708S2TRPBF IRF6708S2TR(1)PBF.pdf
IRF6708S2TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A DIRECTFET S1
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IRF6728MTR1PBF irf6728mpbf.pdf?fileId=5546d462533600a4015355ed73701a9c
IRF6728MTR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V
товару немає в наявності
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IRF6728MTRPBF irf6728mpbf.pdf?fileId=5546d462533600a4015355ed73701a9c
IRF6728MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V
товару немає в наявності
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IRF9332PBF irf9332pbf.pdf?fileId=5546d462533600a40153561136b71d9f
IRF9332PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9.8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
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IRF9332TRPBF irf9332pbf.pdf?fileId=5546d462533600a40153561136b71d9f
IRF9332TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
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IRF9358PBF irf9358pbf.pdf?fileId=5546d462533600a4015356114ffa1da5
IRF9358PBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 9.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 9.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
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IRF9358TRPBF irf9358pbf.pdf?fileId=5546d462533600a4015356114ffa1da5
IRF9358TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 9.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+30.75 грн
8000+29.07 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRF9392TRPBF IRF9392PBF.pdf
IRF9392TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 7.8A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
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IRF9395MTR1PBF irf9395mpbf.pdf?fileId=5546d462533600a40153561198461db7
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 14A DIRECTFETMC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MC
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ MC
Part Status: Obsolete
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IRFB3607GPBF IRFB3607GPBF.pdf
IRFB3607GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IRFH5104TR2PBF irfh5104pbf.pdf?fileId=5546d462533600a40153561add341ea4
IRFH5104TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 24A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
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IRFH5104TRPBF irfh5104pbf.pdf?fileId=5546d462533600a40153561add341ea4
IRFH5104TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 24A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
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IRFH5204TRPBF irfh5204pbf.pdf?fileId=5546d462533600a40153561af5511eaa
IRFH5204TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 22A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
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IRFH5215TRPBF irfh5215pbf.pdf?fileId=5546d462533600a40153561b15111eb2
IRFH5215TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 5A/27A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
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IRFH5220TRPBF irfh5220pbf.pdf?fileId=5546d462533600a40153561b1bf41eb4
IRFH5220TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 3.8A/20A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
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IRFH9310TRPBF irfh9310pbf.pdf?fileId=5546d462533600a40153561fe1ae1f27
IRFH9310TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 21A/40A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V
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IRFI4110GPBF irfi4110gpbf.pdf?fileId=5546d462533600a401535623f28d1f78
IRFI4110GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 72A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 43A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9540 pF @ 50 V
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IRFI4121H-117P IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A TO220-5
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
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IRFS4410ZTRLPBF irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a
IRFS4410ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 97A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+62.74 грн
1600+59.66 грн
2400+59.26 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRGP4066DPBF irgp4066dpbf.pdf?fileId=5546d462533600a401535655feed2454
IRGP4066DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 140A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 155 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
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IRL6342TRPBF irl6342pbf.pdf?fileId=5546d462533600a40153565ffb7a2577
IRL6342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 9.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+16.08 грн
8000+14.67 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRLHS6242TRPBF irlhs6242pbf.pdf?fileId=5546d462533600a401535663a52d25a9
IRLHS6242TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
на замовлення 88000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+10.56 грн
8000+9.47 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRLHS6342TRPBF irlhs6342pbf.pdf?fileId=5546d462533600a401535663b52625ad
IRLHS6342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
на замовлення 124000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+14.30 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRLHS6376TRPBF irlhs6376pbf.pdf?fileId=5546d462533600a401535663bef425af
IRLHS6376TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 3.6A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
на замовлення 112000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+12.03 грн
8000+11.36 грн
20000+11.15 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRS2001MPBF irs2001mpbf.pdf?fileId=5546d462533600a4015356759e20277c
IRS2001MPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2053MTRPBF IRS2053MPbF.pdf
IRS2053MTRPBF
Виробник: Infineon Technologies
Description: IC LINE DRIVER 48MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Specifications: Class D
Applications: Pre-Amplifier
Supplier Device Package: 48-MLPQ (7x7)
Part Status: Obsolete
Number of Channels: 3
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IRS2113MPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
IRS2113MPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS21844MPBF irs21844mpbf.pdf?fileId=5546d462533600a401535676dfb027de
IRS21844MPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS2302SPBF Infineon-IRS2302S-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016a4e4998500c47
IRS2302SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.29 грн
10+83.33 грн
95+67.50 грн
190+60.36 грн
285+58.87 грн
570+56.67 грн
1045+54.17 грн
2565+52.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRS25401PBF irs25401pbf.pdf?fileId=5546d462533600a40153567b06662826
IRS25401PBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.260", 6.60mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-PDIP
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 16.6V
товару немає в наявності
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IRS25411SPBF irs25401pbf.pdf?fileId=5546d462533600a40153567b06662826
IRS25411SPBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 16.6V
товару немає в наявності
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IRS25411STRPBF irs25401pbf.pdf?fileId=5546d462533600a40153567b06662826
IRS25411STRPBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 16.6V
Part Status: Active
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IRS27951SPBF irs27951s.pdf?fileId=5546d462533600a40153567b77792849
IRS27951SPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Discontinued at Digi-Key
Number of Outputs: 2
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IRS27951STRPBF irs27951s.pdf?fileId=5546d462533600a40153567b77792849
IRS27951STRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 2
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IRS27952SPBF irs27951s.pdf?fileId=5546d462533600a40153567b77792849
IRS27952SPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 2
товару немає в наявності
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IRS27952STRPBF irs27951s.pdf?fileId=5546d462533600a40153567b77792849
IRS27952STRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500Hz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+99.13 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BSZ0901NSIATMA1 BSZ0901NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f2550ff441cf9
BSZ0901NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+29.83 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ0904NSIATMA1 BSZ0904NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2a1ec7d90032
BSZ0904NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+21.10 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IKW50N60TAFKSA1 IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21
IKW50N60TAFKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
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BSZ0901NSATMA1 BSZ0901NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f20f7321863dd
BSZ0901NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
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BSZ0902NSIATMA1 BSZ0902NSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308e38cc9c33f9
BSZ0902NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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IKW75N60TAFKSA1 IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25
IKW75N60TAFKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH/FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
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BSZ0901NSIATMA1 BSZ0901NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f2550ff441cf9
BSZ0901NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
на замовлення 13470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.88 грн
10+73.39 грн
100+49.20 грн
500+36.42 грн
1000+33.29 грн
2000+32.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSZ0904NSIATMA1 BSZ0904NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2a1ec7d90032
BSZ0904NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V
на замовлення 5610 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.01 грн
10+46.02 грн
100+30.43 грн
500+22.08 грн
1000+20.00 грн
2000+18.46 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSZ0901NSATMA1 BSZ0901NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f20f7321863dd
BSZ0901NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
на замовлення 3466 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.03 грн
10+78.90 грн
100+61.36 грн
500+48.81 грн
1000+39.76 грн
2000+37.43 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY14B104NA-BA25I download
CY14B104NA-BA25I
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY7C1415KV18-250BZCT Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1415KV18-250BZCT
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1513KV18-200BZXI Infineon-CY7C1526KV18_CY7C1513KV18_CY7C1515KV18_72-Mbit_QDR(R)_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe15e1314b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1513KV18-200BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C15632KV18-450BZXI download
CY7C15632KV18-450BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1565KV18-500BZXI Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1565KV18-500BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C2563KV18-400BZXI CY7C2561,63,65,76KV18.pdf
CY7C2563KV18-400BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 4M x 18
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CY3210-24X33
Виробник: Infineon Technologies
Description: EVALUATION POD CY8C24X33
Packaging: Box
For Use With/Related Products: CY8C24x33
Accessory Type: Evaluation Pod (EvalPod)
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CY7C1308SV25C-167BZCT
CY7C1308SV25C-167BZCT
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
товару немає в наявності
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