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IRDC3473 IRDC3473 Infineon Technologies irdc3473.pdf?fileId=5546d462533600a40153569b0deb2c08 Description: BOARD EVAL SUPIRBUCK IR3473
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IRDC3475 IRDC3475 Infineon Technologies reference-design-irdc3475-5546d462533600a40153569b14e42c0a Description: BOARD EVAL SUPIRBUCK IR3475
Packaging: Box
Voltage - Output: 1.05V
Voltage - Input: 8V ~ 19V
Current - Output: 10A
Frequency - Switching: 300kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3475
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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IRF8306MTR1PBF IRF8306MTR1PBF Infineon Technologies irf8306mpbf.pdf?fileId=5546d462533600a40153560d29371d5f Description: MOSFET N-CH 30V 23A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V
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IRS2580DSPBF IRS2580DSPBF Infineon Technologies IRS2580DSPbF.pdf Description: IC PFC CTRLR CCM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOIC
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IRDC3842A Infineon Technologies irdc3842a.pdf Description: EVAL BOARD FOR IR3842A
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3842A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
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IRGPS4067DPBF IRGPS4067DPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT TRENCH 600V 240A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
Supplier Device Package: SUPER-247™ (TO-274AA)
IGBT Type: Trench
Td (on/off) @ 25°C: 80ns/190ns
Switching Energy: 5.75mJ (on), 3.43mJ (off)
Test Condition: 400V, 120A, 4.7Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
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IRDC3856W Infineon Technologies irdc3856w.pdf Description: BOARD EVAL SUPIRBUCK IR3856W
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3856W
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
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IRS2980SPBF IRS2980SPBF Infineon Technologies IRS2980S.pdf Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SOIC
Dimming: Analog, PWM
Voltage - Supply (Min): 10V
Voltage - Supply (Max): 16.6V
Part Status: Obsolete
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IRDC3865 IRDC3865 Infineon Technologies irdc3865.pdf?fileId=5546d462533600a40153569f46e12c55 Description: BOARD EVAL SUPIRBUCK IR3865
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IRS2334MPBF IRS2334MPBF Infineon Technologies irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b Description: IC GATE DRVR HALF-BRIDGE 28MLPQ
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Packaging: Tray
Supplier Device Package: 28-MLPQ (5x5)
High Side Voltage - Max (Bootstrap): 600 V
товару немає в наявності
 Мінімальне замовлення: 3120 шт
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IRDC3897 IRDC3897 Infineon Technologies ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813 Description: EVAL BOARD FOR IR3897
Part Status: Active
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IR3897
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 600kHz
Current - Output: 4A
Voltage - Input: 12V
Voltage - Output: 1.2V
Packaging: Box
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IRFHM792TR2PBF IRFHM792TR2PBF Infineon Technologies irfhm792pbf.pdf?fileId=5546d462533600a40153562312361f3f Description: MOSFET 2N-CH 100V 2.3A 8PQFN
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 100V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
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IRFHM8363TR2PBF IRFHM8363TR2PBF Infineon Technologies irfhm8363pbf.pdf?fileId=5546d462533600a40153562378cd1f57 Description: MOSFET 2N-CH 30V 11A 8PQFN
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
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IRLH6224TR2PBF IRLH6224TR2PBF Infineon Technologies irlh6224pbf.pdf?fileId=5546d462533600a4015356637a02259f Description: MOSFET N CH 20V 28A PQFN 5X6 MM
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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BSC160N10NS3GATMA1 BSC160N10NS3GATMA1 Infineon Technologies BSC160N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd01226040189a7f47 Description: MOSFET N-CH 100V 8.8A/42A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 33A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
на замовлення 2789 шт:
термін постачання 21-31 дні (днів)
3+148.92 грн
10+91.56 грн
100+61.91 грн
500+46.17 грн
1000+42.33 грн
2000+40.64 грн
Мінімальне замовлення: 3 шт
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ISO1H801GAUMA1 ISO1H801GAUMA1 Infineon Technologies Final_Datasheet_ISO1H801_V23_sept.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30431b3e89eb011b8dc2d55810ac Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 15V ~ 30V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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ISO1H811GAUMA1 ISO1H811GAUMA1 Infineon Technologies Preliminary+Datasheet+ISO1H811G.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320896aa201208af1f76c0075 Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 24648 шт:
термін постачання 21-31 дні (днів)
1+645.08 грн
10+482.99 грн
25+448.52 грн
100+385.33 грн
250+378.20 грн
В кошику  од. на суму  грн.
ISO1H812GAUMA1 ISO1H812GAUMA1 Infineon Technologies Preliminary+Datasheet+ISO1H812G.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320896aa201208afa6861007a Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 1293 шт:
термін постачання 21-31 дні (днів)
1+678.78 грн
10+508.95 грн
25+472.92 грн
100+406.63 грн
250+400.01 грн
В кошику  од. на суму  грн.
ISO1H815GAUMA1 ISO1H815GAUMA1 Infineon Technologies ISO1H815_V01.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320d39d590120f6ed7d956a76 Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 2287 шт:
термін постачання 21-31 дні (днів)
1+643.51 грн
10+481.85 грн
25+447.44 грн
100+384.39 грн
250+377.28 грн
В кошику  од. на суму  грн.
ISO1H816GAUMA1 ISO1H816GAUMA1 Infineon Technologies ISO1H816_V01.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320d39d590120f700bb736a89 Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
Packaging: Cut Tape (CT)
Features: Auto Restart, Galvanic Isolation, Status Flag
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:8
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 3320 шт:
термін постачання 21-31 дні (днів)
1+643.51 грн
10+481.85 грн
25+447.44 грн
100+384.39 грн
250+377.28 грн
В кошику  од. на суму  грн.
ISO1I811TXUMA1 ISO1I811TXUMA1 Infineon Technologies Preliminary_Datasheet_ISO1I811T_V1_0.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ea425a4012ed83864253845 Description: DGTL ISO 0.5KV 8CH SPI 48-TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Part Status: Active
Number of Channels: 8
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+212.06 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
ISO1I813TXUMA1 ISO1I813TXUMA1 Infineon Technologies Preliminary_Datasheet_ISO1I813T_V10.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ee77f32012f0ae5c60a10fe Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Operating Temperature: -40°C ~ 85°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
Number of Channels: 8
Channel Type: Unidirectional
Isolated Power: No
Common Mode Transient Immunity (Min): 25kV/µs
Supplier Device Package: 48-TSSOP
Inputs - Side 1/Side 2: 8/0
Voltage - Isolation: 500VAC
Technology: Magnetic Coupling
Voltage - Supply: 2.85V ~ 5.5V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+265.05 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
ISO1I811TXUMA1 ISO1I811TXUMA1 Infineon Technologies Preliminary_Datasheet_ISO1I811T_V1_0.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ea425a4012ed83864253845 Description: DGTL ISO 0.5KV 8CH SPI 48-TFSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Part Status: Active
Number of Channels: 8
на замовлення 3305 шт:
термін постачання 21-31 дні (днів)
1+375.45 грн
10+276.63 грн
25+255.42 грн
100+217.80 грн
250+207.37 грн
500+201.08 грн
1000+192.69 грн
В кошику  од. на суму  грн.
ISO1I813TXUMA1 ISO1I813TXUMA1 Infineon Technologies Preliminary_Datasheet_ISO1I813T_V10.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ee77f32012f0ae5c60a10fe Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Number of Channels: 8
Channel Type: Unidirectional
Packaging: Cut Tape (CT)
Isolated Power: No
Common Mode Transient Immunity (Min): 25kV/µs
Supplier Device Package: 48-TSSOP
Inputs - Side 1/Side 2: 8/0
Voltage - Isolation: 500VAC
Technology: Magnetic Coupling
Voltage - Supply: 2.85V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
на замовлення 6595 шт:
термін постачання 21-31 дні (днів)
1+485.18 грн
10+422.08 грн
25+402.48 грн
100+327.97 грн
250+313.23 грн
500+285.59 грн
1000+244.66 грн
В кошику  од. на суму  грн.
IRFTS8342TRPBF IRFTS8342TRPBF Infineon Technologies irfts8342pbf.pdf?fileId=5546d462533600a40153563ae3bd21f1 Description: MOSFET N-CH 30V 8.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
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IRLH7134TRPBF IRLH7134TRPBF Infineon Technologies IRLH7134PbF.pdf Description: MOSFET N-CH 40V 26A/85A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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IRLTS6342TRPBF IRLTS6342TRPBF Infineon Technologies irlts6342pbf.pdf?fileId=5546d462533600a401535671f35a271a Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.49 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IRFTS9342TRPBF IRFTS9342TRPBF Infineon Technologies irfts9342pbf.pdf?fileId=5546d462533600a40153563aeabc21f3 Description: MOSFET P-CH 30V 5.8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IRLTS2242TRPBF IRLTS2242TRPBF Infineon Technologies infineon-irlts2242-datasheet-en.pdf Description: MOSFET P-CH 20V 6.9A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+9.71 грн
6000+8.53 грн
9000+8.12 грн
15000+7.18 грн
21000+6.92 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IRFR812TRPBF IRFR812TRPBF Infineon Technologies irfr812pbf.pdf?fileId=5546d462533600a401535635d2f02128 Description: MOSFET N-CH 500V 3.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFR812PBF IRFR812PBF Infineon Technologies irfr812pbf.pdf?fileId=5546d462533600a401535635d2f02128 Description: MOSFET N-CH 500V 3.6A DPAK
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IRFR825TRPBF IRFR825TRPBF Infineon Technologies irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a Description: MOSFET N-CH 500V 6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRFR825PBF IRFR825PBF Infineon Technologies irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a Description: MOSFET N-CH 500V 6A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IRFH7107TRPBF IRFH7107TRPBF Infineon Technologies IRFH7107PbF.pdf Description: MOSFET N-CH 75V 14A/75A 8PQFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
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IRFTS8342TRPBF IRFTS8342TRPBF Infineon Technologies irfts8342pbf.pdf?fileId=5546d462533600a40153563ae3bd21f1 Description: MOSFET N-CH 30V 8.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
товару немає в наявності
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IRLH7134TRPBF IRLH7134TRPBF Infineon Technologies IRLH7134PbF.pdf Description: MOSFET N-CH 40V 26A/85A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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IRLTS6342TRPBF IRLTS6342TRPBF Infineon Technologies irlts6342pbf.pdf?fileId=5546d462533600a401535671f35a271a Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
на замовлення 8937 шт:
термін постачання 21-31 дні (днів)
7+46.25 грн
12+27.32 грн
50+19.90 грн
100+16.41 грн
500+12.41 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IRFTS9342TRPBF IRFTS9342TRPBF Infineon Technologies irfts9342pbf.pdf?fileId=5546d462533600a40153563aeabc21f3 Description: MOSFET P-CH 30V 5.8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
8+43.11 грн
12+25.96 грн
100+16.63 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IRLTS2242TRPBF IRLTS2242TRPBF Infineon Technologies infineon-irlts2242-datasheet-en.pdf Description: MOSFET P-CH 20V 6.9A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 22448 шт:
термін постачання 21-31 дні (днів)
8+42.33 грн
12+25.29 грн
100+16.17 грн
500+11.48 грн
1000+10.29 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IRFR825TRPBF IRFR825TRPBF Infineon Technologies irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a Description: MOSFET N-CH 500V 6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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IRFH7107TR2PBF IRFH7107TR2PBF Infineon Technologies IRFH7107PbF.pdf Description: MOSFET N-CH 75V 14A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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CY14V101Q3-SFXI CY14V101Q3-SFXI Infineon Technologies Infineon-CY14V101Q3-SFXI-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0382a34be Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC
на замовлення 660 шт:
термін постачання 21-31 дні (днів)
1+1229.81 грн
10+1096.25 грн
25+1081.30 грн
50+1002.01 грн
100+924.12 грн
В кошику  од. на суму  грн.
CY7C1021DV33-10ZSXA CY7C1021DV33-10ZSXA Infineon Technologies Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 44TSOP II
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CY7C1263XV18-633BZXC CY7C1263XV18-633BZXC Infineon Technologies Infineon-CY7C1263XV18_CY7C1265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec281113772 Description: IC SRAM 36MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 633 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 680 шт
В кошику  од. на суму  грн.
CY7C1265XV18-600BZXC CY7C1265XV18-600BZXC Infineon Technologies Infineon-CY7C1263XV18_CY7C1265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec281113772 Description: IC SRAM 36MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 600 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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CY7C1440AV25-250BZXI CY7C1440AV25-250BZXI Infineon Technologies Infineon-CY7C1440AV25_CY7C1446AV25_36-Mbit_(1_M_36_512_K_72)_Pipelined_Sync_SRAM_Datasheet-AdditionalTechnicalInformation-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec469bb39d8 Description: IC SRAM 36MBIT PARALLEL 165FBGA
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CY7C1470BV25-250BZXC CY7C1470BV25-250BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
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CY7C1565XV18-633BZXC CY7C1565XV18-633BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 633 MHz
Technology: SRAM - Synchronous, QDR II+
товару немає в наявності
 Мінімальне замовлення: 136 шт
В кошику  од. на суму  грн.
CY7C1568XV18-600BZXC CY7C1568XV18-600BZXC Infineon Technologies Infineon-CY7C1568XV18_CY7C1570XV18_72-Mbit_DDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec25d123750 Description: IC SRAM 72MBIT PAR 165FBGA
товару немає в наявності
 Мінімальне замовлення: 136 шт
В кошику  од. на суму  грн.
CY7C1568XV18-633BZXC CY7C1568XV18-633BZXC Infineon Technologies Infineon-CY7C1568XV18_CY7C1570XV18_72-Mbit_DDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec25d123750 Description: IC SRAM 72MBIT PAR 165FBGA
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 633 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
товару немає в наявності
 Мінімальне замовлення: 136 шт
В кошику  од. на суму  грн.
CY7C1612KV18-250BZXI CY7C1612KV18-250BZXI Infineon Technologies Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 144MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 144Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
1+21094.02 грн
10+18683.11 грн
25+18057.74 грн
В кошику  од. на суму  грн.
CY7C1612KV18-300BZXI CY7C1612KV18-300BZXI Infineon Technologies Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 144MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 144Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 525 шт
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CY7C1615KV18-250BZXC CY7C1615KV18-250BZXC Infineon Technologies Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Description: IC SRAM 144MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 144Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 210 шт
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CY7C1618KV18-300BZXC CY7C1618KV18-300BZXC Infineon Technologies Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f Description: IC SRAM 144MBIT PAR 165FBGA
Package / Case: 165-LBGA
Packaging: Tray
Memory Organization: 4M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 144Mbit
Mounting Type: Surface Mount
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CY7C1643KV18-450BZI CY7C1643KV18-450BZI Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
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CY7C1645KV18-400BZXI CY7C1645KV18-400BZXI Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+23018.29 грн
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CY7C1645KV18-450BZXI CY7C1645KV18-450BZXI Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 105 шт
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CY7C1650KV18-450BZC CY7C1650KV18-450BZC Infineon Technologies Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товару немає в наявності
 Мінімальне замовлення: 210 шт
В кошику  од. на суму  грн.
CY7C1663KV18-550BZXC CY7C1663KV18-550BZXC Infineon Technologies Infineon-CY7C1663KV18_CY7C1665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec224e7370c&utm_source=cypress&utm_medium=referral&utm_campaig Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 210 шт
В кошику  од. на суму  грн.
CY7C1670KV18-450BZXC CY7C1670KV18-450BZXC Infineon Technologies Infineon-CY7C1668KV18_CY7C1670KV18_144-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec29fe53791 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товару немає в наявності
 Мінімальне замовлення: 525 шт
В кошику  од. на суму  грн.
IRDC3473 irdc3473.pdf?fileId=5546d462533600a40153569b0deb2c08
IRDC3473
Виробник: Infineon Technologies
Description: BOARD EVAL SUPIRBUCK IR3473
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IRDC3475 reference-design-irdc3475-5546d462533600a40153569b14e42c0a
IRDC3475
Виробник: Infineon Technologies
Description: BOARD EVAL SUPIRBUCK IR3475
Packaging: Box
Voltage - Output: 1.05V
Voltage - Input: 8V ~ 19V
Current - Output: 10A
Frequency - Switching: 300kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3475
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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IRF8306MTR1PBF irf8306mpbf.pdf?fileId=5546d462533600a40153560d29371d5f
IRF8306MTR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V
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IRS2580DSPBF IRS2580DSPbF.pdf
IRS2580DSPBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOIC
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IRDC3842A irdc3842a.pdf
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR3842A
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3842A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
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IRGPS4067DPBF fundamentals-of-power-semiconductors
IRGPS4067DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 240A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
Supplier Device Package: SUPER-247™ (TO-274AA)
IGBT Type: Trench
Td (on/off) @ 25°C: 80ns/190ns
Switching Energy: 5.75mJ (on), 3.43mJ (off)
Test Condition: 400V, 120A, 4.7Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
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IRDC3856W irdc3856w.pdf
Виробник: Infineon Technologies
Description: BOARD EVAL SUPIRBUCK IR3856W
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3856W
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
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IRS2980SPBF IRS2980S.pdf
IRS2980SPBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SOIC
Dimming: Analog, PWM
Voltage - Supply (Min): 10V
Voltage - Supply (Max): 16.6V
Part Status: Obsolete
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IRDC3865 irdc3865.pdf?fileId=5546d462533600a40153569f46e12c55
IRDC3865
Виробник: Infineon Technologies
Description: BOARD EVAL SUPIRBUCK IR3865
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IRS2334MPBF irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b
IRS2334MPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28MLPQ
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Packaging: Tray
Supplier Device Package: 28-MLPQ (5x5)
High Side Voltage - Max (Bootstrap): 600 V
товару немає в наявності
Мінімальне замовлення: 3120 шт
В кошику  од. на суму  грн.
IRDC3897 ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813
IRDC3897
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR3897
Part Status: Active
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IR3897
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 600kHz
Current - Output: 4A
Voltage - Input: 12V
Voltage - Output: 1.2V
Packaging: Box
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IRFHM792TR2PBF irfhm792pbf.pdf?fileId=5546d462533600a40153562312361f3f
IRFHM792TR2PBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 2.3A 8PQFN
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 100V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
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IRFHM8363TR2PBF irfhm8363pbf.pdf?fileId=5546d462533600a40153562378cd1f57
IRFHM8363TR2PBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 11A 8PQFN
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
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IRLH6224TR2PBF irlh6224pbf.pdf?fileId=5546d462533600a4015356637a02259f
IRLH6224TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N CH 20V 28A PQFN 5X6 MM
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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BSC160N10NS3GATMA1 BSC160N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd01226040189a7f47
BSC160N10NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.8A/42A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 33A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
на замовлення 2789 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+148.92 грн
10+91.56 грн
100+61.91 грн
500+46.17 грн
1000+42.33 грн
2000+40.64 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
ISO1H801GAUMA1 Final_Datasheet_ISO1H801_V23_sept.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30431b3e89eb011b8dc2d55810ac
ISO1H801GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 15V ~ 30V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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ISO1H811GAUMA1 Preliminary+Datasheet+ISO1H811G.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320896aa201208af1f76c0075
ISO1H811GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 24648 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+645.08 грн
10+482.99 грн
25+448.52 грн
100+385.33 грн
250+378.20 грн
В кошику  од. на суму  грн.
ISO1H812GAUMA1 Preliminary+Datasheet+ISO1H812G.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320896aa201208afa6861007a
ISO1H812GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 625mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 1293 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+678.78 грн
10+508.95 грн
25+472.92 грн
100+406.63 грн
250+400.01 грн
В кошику  од. на суму  грн.
ISO1H815GAUMA1 ISO1H815_V01.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320d39d590120f6ed7d956a76
ISO1H815GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 DSO-36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 2287 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+643.51 грн
10+481.85 грн
25+447.44 грн
100+384.39 грн
250+377.28 грн
В кошику  од. на суму  грн.
ISO1H816GAUMA1 ISO1H816_V01.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320d39d590120f700bb736a89
ISO1H816GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
Packaging: Cut Tape (CT)
Features: Auto Restart, Galvanic Isolation, Status Flag
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:8
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 3320 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+643.51 грн
10+481.85 грн
25+447.44 грн
100+384.39 грн
250+377.28 грн
В кошику  од. на суму  грн.
ISO1I811TXUMA1 Preliminary_Datasheet_ISO1I811T_V1_0.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ea425a4012ed83864253845
ISO1I811TXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 0.5KV 8CH SPI 48-TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Part Status: Active
Number of Channels: 8
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+212.06 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
ISO1I813TXUMA1 Preliminary_Datasheet_ISO1I813T_V10.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ee77f32012f0ae5c60a10fe
ISO1I813TXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Operating Temperature: -40°C ~ 85°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
Number of Channels: 8
Channel Type: Unidirectional
Isolated Power: No
Common Mode Transient Immunity (Min): 25kV/µs
Supplier Device Package: 48-TSSOP
Inputs - Side 1/Side 2: 8/0
Voltage - Isolation: 500VAC
Technology: Magnetic Coupling
Voltage - Supply: 2.85V ~ 5.5V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+265.05 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
ISO1I811TXUMA1 Preliminary_Datasheet_ISO1I811T_V1_0.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ea425a4012ed83864253845
ISO1I811TXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 0.5KV 8CH SPI 48-TFSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Part Status: Active
Number of Channels: 8
на замовлення 3305 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+375.45 грн
10+276.63 грн
25+255.42 грн
100+217.80 грн
250+207.37 грн
500+201.08 грн
1000+192.69 грн
В кошику  од. на суму  грн.
ISO1I813TXUMA1 Preliminary_Datasheet_ISO1I813T_V10.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ee77f32012f0ae5c60a10fe
ISO1I813TXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Number of Channels: 8
Channel Type: Unidirectional
Packaging: Cut Tape (CT)
Isolated Power: No
Common Mode Transient Immunity (Min): 25kV/µs
Supplier Device Package: 48-TSSOP
Inputs - Side 1/Side 2: 8/0
Voltage - Isolation: 500VAC
Technology: Magnetic Coupling
Voltage - Supply: 2.85V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
на замовлення 6595 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+485.18 грн
10+422.08 грн
25+402.48 грн
100+327.97 грн
250+313.23 грн
500+285.59 грн
1000+244.66 грн
В кошику  од. на суму  грн.
IRFTS8342TRPBF irfts8342pbf.pdf?fileId=5546d462533600a40153563ae3bd21f1
IRFTS8342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
товару немає в наявності
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IRLH7134TRPBF IRLH7134PbF.pdf
IRLH7134TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 26A/85A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
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IRLTS6342TRPBF irlts6342pbf.pdf?fileId=5546d462533600a401535671f35a271a
IRLTS6342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+10.49 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IRFTS9342TRPBF irfts9342pbf.pdf?fileId=5546d462533600a40153563aeabc21f3
IRFTS9342TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IRLTS2242TRPBF infineon-irlts2242-datasheet-en.pdf
IRLTS2242TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6.9A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+9.71 грн
6000+8.53 грн
9000+8.12 грн
15000+7.18 грн
21000+6.92 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IRFR812TRPBF irfr812pbf.pdf?fileId=5546d462533600a401535635d2f02128
IRFR812TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
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IRFR812PBF irfr812pbf.pdf?fileId=5546d462533600a401535635d2f02128
IRFR812PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.6A DPAK
товару немає в наявності
В кошику  од. на суму  грн.
IRFR825TRPBF irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a
IRFR825TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRFR825PBF irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a
IRFR825PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
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IRFH7107TRPBF IRFH7107PbF.pdf
IRFH7107TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 14A/75A 8PQFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
товару немає в наявності
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IRFTS8342TRPBF irfts8342pbf.pdf?fileId=5546d462533600a40153563ae3bd21f1
IRFTS8342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
товару немає в наявності
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IRLH7134TRPBF IRLH7134PbF.pdf
IRLH7134TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 26A/85A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRLTS6342TRPBF irlts6342pbf.pdf?fileId=5546d462533600a401535671f35a271a
IRLTS6342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
на замовлення 8937 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
7+46.25 грн
12+27.32 грн
50+19.90 грн
100+16.41 грн
500+12.41 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IRFTS9342TRPBF irfts9342pbf.pdf?fileId=5546d462533600a40153563aeabc21f3
IRFTS9342TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8+43.11 грн
12+25.96 грн
100+16.63 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IRLTS2242TRPBF infineon-irlts2242-datasheet-en.pdf
IRLTS2242TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6.9A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 22448 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8+42.33 грн
12+25.29 грн
100+16.17 грн
500+11.48 грн
1000+10.29 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IRFR825TRPBF irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a
IRFR825TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
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IRFH7107TR2PBF IRFH7107PbF.pdf
IRFH7107TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 14A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
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CY14V101Q3-SFXI Infineon-CY14V101Q3-SFXI-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0382a34be
CY14V101Q3-SFXI
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC
на замовлення 660 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1229.81 грн
10+1096.25 грн
25+1081.30 грн
50+1002.01 грн
100+924.12 грн
В кошику  од. на суму  грн.
CY7C1021DV33-10ZSXA Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1021DV33-10ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
товару немає в наявності
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CY7C1263XV18-633BZXC Infineon-CY7C1263XV18_CY7C1265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec281113772
CY7C1263XV18-633BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 633 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 680 шт
В кошику  од. на суму  грн.
CY7C1265XV18-600BZXC Infineon-CY7C1263XV18_CY7C1265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec281113772
CY7C1265XV18-600BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 600 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
товару немає в наявності
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CY7C1440AV25-250BZXI Infineon-CY7C1440AV25_CY7C1446AV25_36-Mbit_(1_M_36_512_K_72)_Pipelined_Sync_SRAM_Datasheet-AdditionalTechnicalInformation-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec469bb39d8
CY7C1440AV25-250BZXI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
товару немає в наявності
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CY7C1470BV25-250BZXC download
CY7C1470BV25-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
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CY7C1565XV18-633BZXC download
CY7C1565XV18-633BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 633 MHz
Technology: SRAM - Synchronous, QDR II+
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику  од. на суму  грн.
CY7C1568XV18-600BZXC Infineon-CY7C1568XV18_CY7C1570XV18_72-Mbit_DDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec25d123750
CY7C1568XV18-600BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику  од. на суму  грн.
CY7C1568XV18-633BZXC Infineon-CY7C1568XV18_CY7C1570XV18_72-Mbit_DDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec25d123750
CY7C1568XV18-633BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 633 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику  од. на суму  грн.
CY7C1612KV18-250BZXI Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1612KV18-250BZXI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 144Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+21094.02 грн
10+18683.11 грн
25+18057.74 грн
В кошику  од. на суму  грн.
CY7C1612KV18-300BZXI Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1612KV18-300BZXI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 144Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 525 шт
В кошику  од. на суму  грн.
CY7C1615KV18-250BZXC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
CY7C1615KV18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 144Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 210 шт
В кошику  од. на суму  грн.
CY7C1618KV18-300BZXC Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f
CY7C1618KV18-300BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Package / Case: 165-LBGA
Packaging: Tray
Memory Organization: 4M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 144Mbit
Mounting Type: Surface Mount
товару немає в наявності
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CY7C1643KV18-450BZI download
CY7C1643KV18-450BZI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
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CY7C1645KV18-400BZXI download
CY7C1645KV18-400BZXI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+23018.29 грн
В кошику  од. на суму  грн.
CY7C1645KV18-450BZXI download
CY7C1645KV18-450BZXI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 105 шт
В кошику  од. на суму  грн.
CY7C1650KV18-450BZC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
CY7C1650KV18-450BZC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товару немає в наявності
Мінімальне замовлення: 210 шт
В кошику  од. на суму  грн.
CY7C1663KV18-550BZXC Infineon-CY7C1663KV18_CY7C1665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec224e7370c&utm_source=cypress&utm_medium=referral&utm_campaig
CY7C1663KV18-550BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 210 шт
В кошику  од. на суму  грн.
CY7C1670KV18-450BZXC Infineon-CY7C1668KV18_CY7C1670KV18_144-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec29fe53791
CY7C1670KV18-450BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товару немає в наявності
Мінімальне замовлення: 525 шт
В кошику  од. на суму  грн.
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