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BSO203SPHXUMA1 BSO203SPHXUMA1 Infineon Technologies BSO203SP_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b483bb050b22 Description: MOSFET P-CH 20V 7A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ018NE2LS BSZ018NE2LS Infineon Technologies BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc Description: MOSFET N-CH 25V 23A TSDSON-8
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSZ018NE2LSIATMA1 BSZ018NE2LSIATMA1 Infineon Technologies BSZ018NE2LSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093cc4a9471d2 Description: MOSFET N-CH 25V 22A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+60.87 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ019N03LSATMA1 BSZ019N03LSATMA1 Infineon Technologies BSZ019N03LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb7ddf173f4e Description: MOSFET N-CH 30V 22A . 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta). 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
5000+48.83 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ036NE2LSATMA1 BSZ036NE2LSATMA1 Infineon Technologies BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869 Description: MOSFET N-CH 25V 16A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+22.48 грн
10000+21.25 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 Infineon Technologies BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f Description: MOSFET N-CH 25V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
5000+13.97 грн
10000+13.20 грн
15000+12.79 грн
25000+11.91 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ065N03LSATMA1 BSZ065N03LSATMA1 Infineon Technologies BSZ065N03LS_Rev2.1_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed7fbc0b23834 Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+17.57 грн
10000+16.72 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ0902NSATMA1 BSZ0902NSATMA1 Infineon Technologies BSZ0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f25d963971d2f Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
5000+22.87 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ0909NSATMA1 BSZ0909NSATMA1 Infineon Technologies BSZ0909NS_rev3.2.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a3043284aacd80128827726205408 Description: MOSFET N-CH 34V 9A/36A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
5000+14.10 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ240N12NS3GATMA1 BSZ240N12NS3GATMA1 Infineon Technologies BSZ240N12NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432a40a650012a42f3057a0038 Description: MOSFET N-CH 120V 37A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+39.90 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ42DN25NS3GATMA1 BSZ42DN25NS3GATMA1 Infineon Technologies BSZ42DN25NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15e5a93b1a8b Description: MOSFET N-CH 250V 5A TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+34.33 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BTM7742GXUMA1 BTM7742GXUMA1 Infineon Technologies BTM7742G.pdf Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 28V
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
товару немає в наявності
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BTM7745GXUMA1 BTM7745GXUMA1 Infineon Technologies Transportation_Br.pdf Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 28V
Motor Type - AC, DC: Brushed DC
товару немає в наявності
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BTM7752GXUMA1 BTM7752GXUMA1 Infineon Technologies Infineon-BTM7752G-DS-v02_00-en.pdf?folderId=db3a3043156fd5730116144c5d101c30&fileId=db3a30432e1525b3012e24c6ed042357&ack=t Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 28V
Supplier Device Package: PG-DSO-36
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BTM7755GXUMA1 BTM7755GXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOTOR DRIVER 8V-18V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Motor Type - AC, DC: Brushed DC
товару немає в наявності
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BTS3028SDRATMA1 BTS3028SDRATMA1 Infineon Technologies Infineon-BTS3028SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad822a204c25 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
товару немає в наявності
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BTS3046SDLATMA1 BTS3046SDLATMA1 Infineon Technologies Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+75.71 грн
5000+71.36 грн
7500+70.58 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BTS3046SDRATMA1 BTS3046SDRATMA1 Infineon Technologies Infineon-BTS3046SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad820ee64c1d Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
2500+75.71 грн
5000+71.36 грн
7500+70.58 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BTS3104SDLATMA1 BTS3104SDLATMA1 Infineon Technologies Infineon-BTS3104SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fde434bfb Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 104mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BTS3104SDRATMA1 BTS3104SDRATMA1 Infineon Technologies Infineon-BTS3104SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fd0314bf7 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 104mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+59.49 грн
5000+56.02 грн
7500+55.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BTS500801TMCATMA1 BTS500801TMCATMA1 Infineon Technologies Infineon-BTS50080_1TMC-DS-v01_00-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a3043266237920126992737c951ee&ack=t Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 38V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS5480SFXUMA1 BTS5480SFXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.5mOhm, 11mOhm
Voltage - Load: 8V ~ 17V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 3:4
Supplier Device Package: PG-DSO-36-43
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Not For New Designs
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BTS6460SFXUMA1 BTS6460SFXUMA1 Infineon Technologies Description: IC SW SMART HI SIDE 4CH DSO36-43
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BTS6480SFXUMA1 BTS6480SFXUMA1 Infineon Technologies Automotive_Power_SG_2016.pdf?fileId=5546d46153f64e7201542916c9830c71 Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
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ESD8V0R1B02ELE6327XTMA1 ESD8V0R1B02ELE6327XTMA1 Infineon Technologies ESD8V0R1B_Series.pdf Description: TVS DIODE 14VWM 28VC TSLP-2-18
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-18
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
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ESD8V0R1B-02EL E6433 ESD8V0R1B-02EL E6433 Infineon Technologies ESD8V0R1B_Series.pdf Description: TVS DIODE 14VWM 28VC TSLP2-18
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ICLS6022GXUMA1 ICLS6022GXUMA1 Infineon Technologies Data_Sheet_ICLS6x_Series.pdf?folderId=db3a304316f66ee801178c31a9af054a&fileId=db3a304330f686060131193d603545dd Description: IC LED DRIVER OFFL DIM 16/12DSO
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ICLS8082GXUMA1 ICLS8082GXUMA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a266dfa2881&fileId=db3a304326dfb1300126ffed78a165b1 Description: IC LED DRIVER OFFLINE DIM 12DSO
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IFX1021SJ IFX1021SJ Infineon Technologies Infineon-IFX1021-DS-v01_00-en.pdf?folderId=db3a30431ed1d7b2011edadb13813703&fileId=db3a304332b626b80132cf46319e674e&ack=t Description: IC TXRX LIN BUS 8DSO
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IFX1050GVIOXUMA1 IFX1050GVIOXUMA1 Infineon Technologies IFX1050GVIO_DS_10.pdf?fileId=db3a304330f68606013141d8eac7569f Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 150 mV
Duplex: Full
Part Status: Obsolete
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IFX1117MEV33HTMA1 IFX1117MEV33HTMA1 Infineon Technologies IFX1117_Rev1.0_2-24-11.pdf Description: IC REG LIN 3.3V 1A SOT223-4-21
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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IFX80471SKVXUMA1 IFX80471SKVXUMA1 Infineon Technologies IFX80471.pdf Description: IC REG CTRLR BUCK 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
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IFX80471SKV50XUMA1 IFX80471SKV50XUMA1 Infineon Technologies IFX80471.pdf Description: IC REG CTRLR BUCK 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
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IGB01N120H2ATMA1 IGB01N120H2ATMA1 Infineon Technologies IGB01N120H2_Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427a4883c86 Description: IGBT 1200V 3.2A 28W TO263-3-2
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IGB20N60H3ATMA1 IGB20N60H3ATMA1 Infineon Technologies IGB20N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a4677106a2b6d Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
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IGB30N60H3ATMA1 IGB30N60H3ATMA1 Infineon Technologies IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96 Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+82.42 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IKD03N60RF IKD03N60RF Infineon Technologies Infineon-IKD03N60RF_-DS-v02_05-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c5c92fb013c5d3978350068 Description: IGBT TRENCH 600V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 90µJ
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
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IKD04N60RF IKD04N60RF Infineon Technologies Infineon-IKD04N60RF-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5d6c806d00dc Description: IGBT 600V 8A 75W TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 110µJ
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
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IKD10N60RAATMA2 IKD10N60RAATMA2 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 20A 150W TO252-3
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IKD15N60RAATMA1 IKD15N60RAATMA1 Infineon Technologies IKD15N60RA.pdf Description: IGBT TRENCH 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 16ns/183ns
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
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ILD4180XUMA1 ILD4180XUMA1 Infineon Technologies ILD4180.pdf Description: IC LED DRVR RGLTR PWM 1.8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
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IPB025N10N3GE8187ATMA1 IPB025N10N3GE8187ATMA1 Infineon Technologies IPB025N10N3+G_Rev2.03.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ab1d9d51349 Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
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IPB039N10N3GE8187ATMA1 IPB039N10N3GE8187ATMA1 Infineon Technologies IPB039N10N3+G_Rev2.03.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed1fd3915e0 Description: MOSFET N-CH 100V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
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IPB042N10N3GE8187ATMA1 IPB042N10N3GE8187ATMA1 Infineon Technologies IPP045N10N3+G_Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1e8b0cc31586 Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
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IPB049NE7N3GATMA1 IPB049NE7N3GATMA1 Infineon Technologies IPB049NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a517a48e0bb9 Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+86.08 грн
Мінімальне замовлення: 1000
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IPB065N15N3GE8187ATMA1 IPB065N15N3GE8187ATMA1 Infineon Technologies IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
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IPB072N15N3GE8187ATMA1 IPB072N15N3GE8187ATMA1 Infineon Technologies IPP075N15N3+G_Rev2.06.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd76cc527ab6 Description: MOSFET N-CH 150V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
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IPB100N04S4H2ATMA1 IPB100N04S4H2ATMA1 Infineon Technologies Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+95.14 грн
2000+87.03 грн
Мінімальне замовлення: 1000
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IPB107N20NAATMA1 IPB107N20NAATMA1 Infineon Technologies IPP110N20NA_IPB107N20NA+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043300464130130307ce52a20a3 Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+343.16 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB120N04S401ATMA1 IPB120N04S401ATMA1 Infineon Technologies Infineon-IPP_B_I120N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c2ebd3b5d27&ack=t Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+88.72 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB120N04S402ATMA1 IPB120N04S402ATMA1 Infineon Technologies Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+81.16 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB180N03S4LH0ATMA1 IPB180N03S4LH0ATMA1 Infineon Technologies Infineon-IPB180N03S4L_H0-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304324fc7f9a01252090cadb4332&ack=t Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: PG-TO263-7-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB180N04S400ATMA1 IPB180N04S400ATMA1 Infineon Technologies Infineon-IPB180N04S4_00-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c3debd55d57&ack=t Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+122.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB180N04S401ATMA1 IPB180N04S401ATMA1 Infineon Technologies Infineon-IPB180N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c432c5d5d67&ack=t Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB180N04S4H0ATMA1 IPB180N04S4H0ATMA1 Infineon Technologies Infineon-IPB180N04S4_H0-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c4975375d77&ack=t Description: MOSFET N-CH 40V 180A TO263-7-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17940 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+100.73 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB65R110CFDATMA1 IPB65R110CFDATMA1 Infineon Technologies Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R190C6ATMA1 IPB65R190C6ATMA1 Infineon Technologies IPx65R190C6.pdf Description: MOSFET N-CH 650V 20.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R190CFDATMA1 IPB65R190CFDATMA1 Infineon Technologies Infineon-IPX65R190CFD-DS-v02_07-en.pdf?fileId=db3a30432fd0c54a012fded065a8309b Description: MOSFET N-CH 650V 17.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO263-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R280C6ATMA1 IPB65R280C6ATMA1 Infineon Technologies IPx65R280C6.pdf Description: MOSFET N-CH 650V 13.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R380C6ATMA1 IPB65R380C6ATMA1 Infineon Technologies IPx65R380C6.pdf Description: MOSFET N-CH 650V 10.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO203SPHXUMA1 BSO203SP_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b483bb050b22
BSO203SPHXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 7A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ018NE2LS BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc
BSZ018NE2LS
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 23A TSDSON-8
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSZ018NE2LSIATMA1 BSZ018NE2LSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093cc4a9471d2
BSZ018NE2LSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 22A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+60.87 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ019N03LSATMA1 BSZ019N03LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb7ddf173f4e
BSZ019N03LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A . 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta). 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+48.83 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ036NE2LSATMA1 BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869
BSZ036NE2LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 16A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+22.48 грн
10000+21.25 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ060NE2LSATMA1 BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f
BSZ060NE2LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+13.97 грн
10000+13.20 грн
15000+12.79 грн
25000+11.91 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ065N03LSATMA1 BSZ065N03LS_Rev2.1_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed7fbc0b23834
BSZ065N03LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+17.57 грн
10000+16.72 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ0902NSATMA1 BSZ0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f25d963971d2f
BSZ0902NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+22.87 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ0909NSATMA1 BSZ0909NS_rev3.2.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a3043284aacd80128827726205408
BSZ0909NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 9A/36A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+14.10 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ240N12NS3GATMA1 BSZ240N12NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432a40a650012a42f3057a0038
BSZ240N12NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 37A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+39.90 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ42DN25NS3GATMA1 BSZ42DN25NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15e5a93b1a8b
BSZ42DN25NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 5A TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+34.33 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BTM7742GXUMA1 BTM7742G.pdf
BTM7742GXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 28V
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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BTM7745GXUMA1 Transportation_Br.pdf
BTM7745GXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 28V
Motor Type - AC, DC: Brushed DC
товару немає в наявності
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BTM7752GXUMA1 Infineon-BTM7752G-DS-v02_00-en.pdf?folderId=db3a3043156fd5730116144c5d101c30&fileId=db3a30432e1525b3012e24c6ed042357&ack=t
BTM7752GXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 28V
Supplier Device Package: PG-DSO-36
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
товару немає в наявності
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BTM7755GXUMA1 fundamentals-of-power-semiconductors
BTM7755GXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Motor Type - AC, DC: Brushed DC
товару немає в наявності
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BTS3028SDRATMA1 Infineon-BTS3028SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad822a204c25
BTS3028SDRATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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BTS3046SDLATMA1 Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21
BTS3046SDLATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+75.71 грн
5000+71.36 грн
7500+70.58 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BTS3046SDRATMA1 Infineon-BTS3046SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad820ee64c1d
BTS3046SDRATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+75.71 грн
5000+71.36 грн
7500+70.58 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BTS3104SDLATMA1 Infineon-BTS3104SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fde434bfb
BTS3104SDLATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 104mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
товару немає в наявності
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BTS3104SDRATMA1 Infineon-BTS3104SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fd0314bf7
BTS3104SDRATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 104mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+59.49 грн
5000+56.02 грн
7500+55.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BTS500801TMCATMA1 Infineon-BTS50080_1TMC-DS-v01_00-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a3043266237920126992737c951ee&ack=t
BTS500801TMCATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 38V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS5480SFXUMA1 Part_Number_Guide_Web.pdf
BTS5480SFXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.5mOhm, 11mOhm
Voltage - Load: 8V ~ 17V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 3:4
Supplier Device Package: PG-DSO-36-43
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Not For New Designs
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BTS6460SFXUMA1
BTS6460SFXUMA1
Виробник: Infineon Technologies
Description: IC SW SMART HI SIDE 4CH DSO36-43
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BTS6480SFXUMA1 Automotive_Power_SG_2016.pdf?fileId=5546d46153f64e7201542916c9830c71
BTS6480SFXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
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ESD8V0R1B02ELE6327XTMA1 ESD8V0R1B_Series.pdf
ESD8V0R1B02ELE6327XTMA1
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSLP-2-18
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-18
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
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ESD8V0R1B-02EL E6433 ESD8V0R1B_Series.pdf
ESD8V0R1B-02EL E6433
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSLP2-18
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ICLS6022GXUMA1 Data_Sheet_ICLS6x_Series.pdf?folderId=db3a304316f66ee801178c31a9af054a&fileId=db3a304330f686060131193d603545dd
ICLS6022GXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL DIM 16/12DSO
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ICLS8082GXUMA1 dgdl?folderId=5546d4694909da4801490a266dfa2881&fileId=db3a304326dfb1300126ffed78a165b1
ICLS8082GXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFLINE DIM 12DSO
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IFX1021SJ Infineon-IFX1021-DS-v01_00-en.pdf?folderId=db3a30431ed1d7b2011edadb13813703&fileId=db3a304332b626b80132cf46319e674e&ack=t
IFX1021SJ
Виробник: Infineon Technologies
Description: IC TXRX LIN BUS 8DSO
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IFX1050GVIOXUMA1 IFX1050GVIO_DS_10.pdf?fileId=db3a304330f68606013141d8eac7569f
IFX1050GVIOXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 150 mV
Duplex: Full
Part Status: Obsolete
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IFX1117MEV33HTMA1 IFX1117_Rev1.0_2-24-11.pdf
IFX1117MEV33HTMA1
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 1A SOT223-4-21
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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IFX80471SKVXUMA1 IFX80471.pdf
IFX80471SKVXUMA1
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
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IFX80471SKV50XUMA1 IFX80471.pdf
IFX80471SKV50XUMA1
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
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IGB01N120H2ATMA1 IGB01N120H2_Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427a4883c86
IGB01N120H2ATMA1
Виробник: Infineon Technologies
Description: IGBT 1200V 3.2A 28W TO263-3-2
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IGB20N60H3ATMA1 IGB20N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a4677106a2b6d
IGB20N60H3ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
товару немає в наявності
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IGB30N60H3ATMA1 IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96
IGB30N60H3ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+82.42 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IKD03N60RF Infineon-IKD03N60RF_-DS-v02_05-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c5c92fb013c5d3978350068
IKD03N60RF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 90µJ
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
товару немає в наявності
В кошику  од. на суму  грн.
IKD04N60RF Infineon-IKD04N60RF-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5d6c806d00dc
IKD04N60RF
Виробник: Infineon Technologies
Description: IGBT 600V 8A 75W TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 110µJ
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
товару немає в наявності
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IKD10N60RAATMA2 Part_Number_Guide_Web.pdf
IKD10N60RAATMA2
Виробник: Infineon Technologies
Description: IGBT 600V 20A 150W TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IKD15N60RAATMA1 IKD15N60RA.pdf
IKD15N60RAATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 16ns/183ns
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
товару немає в наявності
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ILD4180XUMA1 ILD4180.pdf
ILD4180XUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
товару немає в наявності
В кошику  од. на суму  грн.
IPB025N10N3GE8187ATMA1 IPB025N10N3+G_Rev2.03.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ab1d9d51349
IPB025N10N3GE8187ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
товару немає в наявності
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IPB039N10N3GE8187ATMA1 IPB039N10N3+G_Rev2.03.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed1fd3915e0
IPB039N10N3GE8187ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
товару немає в наявності
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IPB042N10N3GE8187ATMA1 IPP045N10N3+G_Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1e8b0cc31586
IPB042N10N3GE8187ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
товару немає в наявності
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IPB049NE7N3GATMA1 IPB049NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a517a48e0bb9
IPB049NE7N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+86.08 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB065N15N3GE8187ATMA1 IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c
IPB065N15N3GE8187ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
товару немає в наявності
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IPB072N15N3GE8187ATMA1 IPP075N15N3+G_Rev2.06.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd76cc527ab6
IPB072N15N3GE8187ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB100N04S4H2ATMA1 Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t
IPB100N04S4H2ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+95.14 грн
2000+87.03 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB107N20NAATMA1 IPP110N20NA_IPB107N20NA+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043300464130130307ce52a20a3
IPB107N20NAATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+343.16 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB120N04S401ATMA1 Infineon-IPP_B_I120N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c2ebd3b5d27&ack=t
IPB120N04S401ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+88.72 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB120N04S402ATMA1 Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t
IPB120N04S402ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+81.16 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB180N03S4LH0ATMA1 Infineon-IPB180N03S4L_H0-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304324fc7f9a01252090cadb4332&ack=t
IPB180N03S4LH0ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: PG-TO263-7-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB180N04S400ATMA1 Infineon-IPB180N04S4_00-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c3debd55d57&ack=t
IPB180N04S400ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+122.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB180N04S401ATMA1 Infineon-IPB180N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c432c5d5d67&ack=t
IPB180N04S401ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB180N04S4H0ATMA1 Infineon-IPB180N04S4_H0-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c4975375d77&ack=t
IPB180N04S4H0ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17940 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+100.73 грн
Мінімальне замовлення: 1000
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IPB65R110CFDATMA1 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
IPB65R110CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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IPB65R190C6ATMA1 IPx65R190C6.pdf
IPB65R190C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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IPB65R190CFDATMA1 Infineon-IPX65R190CFD-DS-v02_07-en.pdf?fileId=db3a30432fd0c54a012fded065a8309b
IPB65R190CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO263-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
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IPB65R280C6ATMA1 IPx65R280C6.pdf
IPB65R280C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPB65R380C6ATMA1 IPx65R380C6.pdf
IPB65R380C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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