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BSZ0904NSIATMA1 BSZ0904NSIATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
5000+24.26 грн
15000+20.97 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IKW50N60TAFKSA1 IKW50N60TAFKSA1 Infineon Technologies IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
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BSZ0901NSATMA1 BSZ0901NSATMA1 Infineon Technologies BSZ0901NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f20f7321863dd Description: MOSFET N-CH 30V 22A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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BSZ0902NSIATMA1 BSZ0902NSIATMA1 Infineon Technologies BSZ0902NSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308e38cc9c33f9 Description: MOSFET N-CH 30V 21A/40A TSDSON
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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IKW75N60TAFKSA1 IKW75N60TAFKSA1 Infineon Technologies IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
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BSZ0901NSIATMA1 BSZ0901NSIATMA1 Infineon Technologies BSZ0901NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f2550ff441cf9 Description: MOSFET N-CH 30V 25A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 6324 шт:
термін постачання 21-31 дні (днів)
3+119.73 грн
10+73.07 грн
100+48.99 грн
500+36.27 грн
1000+33.15 грн
2000+33.02 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BSZ0904NSIATMA1 BSZ0904NSIATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V
на замовлення 29832 шт:
термін постачання 21-31 дні (днів)
4+99.12 грн
10+60.32 грн
50+44.88 грн
100+37.44 грн
500+29.22 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSZ0901NSATMA1 BSZ0901NSATMA1 Infineon Technologies BSZ0901NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f20f7321863dd Description: MOSFET N-CH 30V 22A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
на замовлення 962 шт:
термін постачання 21-31 дні (днів)
4+102.29 грн
10+62.00 грн
100+41.18 грн
500+30.27 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
CY14B104NA-BA25I CY14B104NA-BA25I Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 48-FBGA (6x10)
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tray
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CY7C1415KV18-250BZCT CY7C1415KV18-250BZCT Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tape & Reel (TR)
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CY7C1513KV18-200BZXI CY7C1513KV18-200BZXI Infineon Technologies Infineon-CY7C1526KV18_CY7C1513KV18_CY7C1515KV18_72-Mbit_QDR(R)_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe15e1314b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Memory Organization: 4M x 18
товару немає в наявності
 Мінімальне замовлення: 1360 шт
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CY7C15632KV18-450BZXI CY7C15632KV18-450BZXI Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 680 шт
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CY7C1565KV18-500BZXI CY7C1565KV18-500BZXI Infineon Technologies Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 272 шт
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CY7C2563KV18-400BZXI CY7C2563KV18-400BZXI Infineon Technologies CY7C2561,63,65,76KV18.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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CY3210-24X33 Infineon Technologies Description: EVALUATION POD CY8C24X33
Accessory Type: Evaluation Pod (EvalPod)
For Use With/Related Products: CY8C24x33
Packaging: Box
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CY7C1308SV25C-167BZCT CY7C1308SV25C-167BZCT Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 165FBGA
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IR1152SPBF IR1152SPBF Infineon Technologies IR1152S.pdf Description: IC PFC CTRLR CCM 66KHZ 8SOIC
Current - Startup: 26 µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 66kHz
Voltage - Supply: 14V ~ 17V
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IR1153SPBF IR1153SPBF Infineon Technologies ir1153.pdf?fileId=5546d462533600a4015355c42a5b1649 Description: IC PFC CTRLR CCM 22.2KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 14V ~ 17V
Frequency - Switching: 22.2kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Startup: 26 µA
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IR1155SPBF IR1155SPBF Infineon Technologies ir1155spbf.pdf?fileId=5546d462533600a4015355c431f9164b Description: IC PFC CTLR CCM ADJUSTABLE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 12V ~ 19V
Frequency - Switching: Adjustable
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Startup: 175 µA
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IR1153STRPBF IR1153STRPBF Infineon Technologies ir1153.pdf?fileId=5546d462533600a4015355c42a5b1649 Description: IC PFC CTRLR CCM 22.2KHZ 8SOIC
Current - Startup: 26 µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 22.2kHz
Voltage - Supply: 14V ~ 17V
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR1152STRPBF IR1152STRPBF Infineon Technologies IR1152S.pdf Description: IC PFC CTRLR CCM 66KHZ 8SOIC
Current - Startup: 26 µA
Supplier Device Package: 8-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 66kHz
Voltage - Supply: 14V ~ 17V
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR1155STRPBF IR1155STRPBF Infineon Technologies ir1155spbf.pdf?fileId=5546d462533600a4015355c431f9164b Description: IC PFC CTLR CCM ADJUSTABLE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 12V ~ 19V
Frequency - Switching: Adjustable
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 175 µA
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IR1152STRPBF IR1152STRPBF Infineon Technologies IR1152S.pdf Description: IC PFC CTRLR CCM 66KHZ 8SOIC
Current - Startup: 26 µA
Supplier Device Package: 8-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 66kHz
Voltage - Supply: 14V ~ 17V
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IR1153STRPBF IR1153STRPBF Infineon Technologies ir1153.pdf?fileId=5546d462533600a4015355c42a5b1649 Description: IC PFC CTRLR CCM 22.2KHZ 8SOIC
Current - Startup: 26 µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 22.2kHz
Voltage - Supply: 14V ~ 17V
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF9358TRPBF IRF9358TRPBF Infineon Technologies irf9358pbf.pdf?fileId=5546d462533600a4015356114ffa1da5 Description: MOSFET 2P-CH 30V 9.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 9.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
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IRFH5104TR2PBF IRFH5104TR2PBF Infineon Technologies irfh5104pbf.pdf?fileId=5546d462533600a40153561add341ea4 Description: MOSFET N-CH 40V 24A/100A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
4+91.98 грн
10+74.52 грн
100+67.12 грн
Мінімальне замовлення: 4 шт
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IRFH5204TR2PBF IRFH5204TR2PBF Infineon Technologies irfh5204pbf.pdf?fileId=5546d462533600a40153561af5511eaa Description: MOSFET N-CH 40V 22A PQFN
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IRFH5215TR2PBF IRFH5215TR2PBF Infineon Technologies irfh5215pbf.pdf?fileId=5546d462533600a40153561b15111eb2 Description: MOSFET N-CH 150V 5.0A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 5V @ 100µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Packaging: Cut Tape (CT)
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IRFH5220TR2PBF IRFH5220TR2PBF Infineon Technologies irfh5220pbf.pdf?fileId=5546d462533600a40153561b1bf41eb4 Description: MOSFET N-CH 200V 3.8A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 5V @ 100µA
Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Packaging: Cut Tape (CT)
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IRL6342TRPBF IRL6342TRPBF Infineon Technologies irl6342pbf.pdf?fileId=5546d462533600a40153565ffb7a2577 Description: MOSFET N-CH 30V 9.9A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IRLHS6242TR2PBF IRLHS6242TR2PBF Infineon Technologies irlhs6242pbf.pdf?fileId=5546d462533600a401535663a52d25a9 Description: MOSFET N-CH 20V 10A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
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IRLHS6342TR2PBF IRLHS6342TR2PBF Infineon Technologies irlhs6342pbf.pdf?fileId=5546d462533600a401535663b52625ad Description: MOSFET N-CH 30V 8.7A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
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IRLHS6376TR2PBF IRLHS6376TR2PBF Infineon Technologies irlhs6376pbf.pdf?fileId=5546d462533600a401535663bef425af Description: MOSFET 2N-CH 30V 3.6A 6PQFN
Vgs(th) (Max) @ Id: 1.1V @ 10µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-PQFN (2x2)
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IRFH8318TRPBF IRFH8318TRPBF Infineon Technologies irfh8318pbf.pdf?fileId=5546d462533600a40153561fa4111f16 Description: MOSFET N-CH 30V 27A/120A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+22.78 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRFH8324TRPBF IRFH8324TRPBF Infineon Technologies irfh8324pbf.pdf?fileId=5546d462533600a40153561fb3581f1a Description: MOSFET N-CH 30V 23A/90A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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IRFH8325TRPBF IRFH8325TRPBF Infineon Technologies irfh8325pbf.pdf?fileId=5546d462533600a40153561fbc041f1d Description: MOSFET N-CH 30V 21A/82A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2487 pF @ 10 V
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IRFH8330TRPBF IRFH8330TRPBF Infineon Technologies irfh8330pbf.pdf?fileId=5546d462533600a40153561fc2dc1f1f Description: MOSFET N-CH 30V 17A/56A PQFN
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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IRFH8334TRPBF IRFH8334TRPBF Infineon Technologies irfh8334pbf.pdf?fileId=5546d462533600a40153561fcb3e1f21 Description: MOSFET N-CH 30V 14A/44A PQFN
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 3.2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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IRLHS2242TRPBF IRLHS2242TRPBF Infineon Technologies irlhs2242pbf.pdf?fileId=5546d462533600a4015356639e1c25a7 Description: MOSFET P-CH 20V 7.2A/15A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+9.92 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRFH8324TR2PBF IRFH8324TR2PBF Infineon Technologies irfh8324pbf.pdf?fileId=5546d462533600a40153561fb3581f1a Description: MOSFET N-CH 30V 23A/90A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRLML2244TRPBF IRLML2244TRPBF Infineon Technologies irlml2244pbf.pdf?fileId=5546d462533600a401535664bfff25f0 Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 16 V
товару немає в наявності
 Мінімальне замовлення: 6000 шт
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IRLML2246TRPBF IRLML2246TRPBF Infineon Technologies irlml2246pbf.pdf?fileId=5546d462533600a401535664c91f25f2 Description: MOSFET P-CH 20V 2.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 16 V
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IRF3610STRLPBF IRF3610STRLPBF Infineon Technologies irf3610spbf.pdf?fileId=5546d462533600a4015355df39591920 Description: MOSFET N-CH 100V 103A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRFH8318TR2PBF IRFH8318TR2PBF Infineon Technologies irfh8318pbf.pdf?fileId=5546d462533600a40153561fa4111f16 Description: MOSFET N-CH 30V 21A 5X6 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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IRFH8324TR2PBF IRFH8324TR2PBF Infineon Technologies irfh8324pbf.pdf?fileId=5546d462533600a40153561fb3581f1a Description: MOSFET N-CH 30V 23A/90A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
3+108.63 грн
10+66.35 грн
Мінімальне замовлення: 3 шт
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IRFH8325TR2PBF IRFH8325TR2PBF Infineon Technologies irfh8325pbf.pdf?fileId=5546d462533600a40153561fbc041f1d Description: MOSFET N-CH 30V 17A 5X6 PQFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2487 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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IRFH8330TR2PBF IRFH8330TR2PBF Infineon Technologies irfh8330pbf.pdf?fileId=5546d462533600a40153561fc2dc1f1f Description: MOSFET N-CH 30V 14A 5X6 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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IRFH8334TR2PBF IRFH8334TR2PBF Infineon Technologies irfh8334pbf.pdf?fileId=5546d462533600a40153561fcb3e1f21 Description: MOSFET N-CH 30V 12A 5X6 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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IRFH8337TR2PBF IRFH8337TR2PBF Infineon Technologies IRFH8337TR2PbF.pdf Description: MOSFET N-CH 30V 9.7A 5X6 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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IRLHS2242TR2PBF IRLHS2242TR2PBF Infineon Technologies irlhs2242pbf.pdf?fileId=5546d462533600a4015356639e1c25a7 Description: MOSFET P-CH 20V 5.8A 2X2 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
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IRLML2244TRPBF IRLML2244TRPBF Infineon Technologies irlml2244pbf.pdf?fileId=5546d462533600a401535664bfff25f0 Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 16 V
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IRLML2246TRPBF IRLML2246TRPBF Infineon Technologies irlml2246pbf.pdf?fileId=5546d462533600a401535664c91f25f2 Description: MOSFET P-CH 20V 2.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 16 V
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IRFH8318TRPBF IRFH8318TRPBF Infineon Technologies irfh8318pbf.pdf?fileId=5546d462533600a40153561fa4111f16 Description: MOSFET N-CH 30V 27A/120A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 10 V
на замовлення 14699 шт:
термін постачання 21-31 дні (днів)
4+91.98 грн
10+55.82 грн
100+36.78 грн
500+26.87 грн
1000+24.40 грн
2000+22.33 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFH8324TRPBF IRFH8324TRPBF Infineon Technologies irfh8324pbf.pdf?fileId=5546d462533600a40153561fb3581f1a Description: MOSFET N-CH 30V 23A/90A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
12+27.75 грн
13+24.89 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
IRFH8334TRPBF IRFH8334TRPBF Infineon Technologies irfh8334pbf.pdf?fileId=5546d462533600a40153561fcb3e1f21 Description: MOSFET N-CH 30V 14A/44A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
8+43.61 грн
13+24.05 грн
100+18.26 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IRLHS2242TRPBF IRLHS2242TRPBF Infineon Technologies irlhs2242pbf.pdf?fileId=5546d462533600a4015356639e1c25a7 Description: MOSFET P-CH 20V 7.2A/15A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V
на замовлення 5142 шт:
термін постачання 21-31 дні (днів)
8+45.20 грн
12+26.65 грн
100+17.07 грн
500+12.15 грн
1000+10.90 грн
2000+9.85 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IRF3610SPBF IRF3610SPBF Infineon Technologies irf3610spbf.pdf?fileId=5546d462533600a4015355df39591920 Description: MOSFET N-CH 100V 103A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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KIT_TC1791_SK Infineon Technologies Microcontroller-TriCore-Brochure-2011-Infineon.pdf?folderId=db3a304412b407950112b409ae660342&fileId=db3a30431f848401011fc664882a7648 Description: KIT STARTER AUDO MAX TC1791
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
KIT_TC1793_SK Infineon Technologies Microcontroller-TriCore-Brochure-2011-Infineon.pdf?folderId=db3a304412b407950112b409ae660342&fileId=db3a30431f848401011fc664882a7648 Description: KIT STARTER AUDO MAX TC1793
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KIT_TC1797_SK Infineon Technologies TC1797_DS_V1+3.pdf?fileId=db3a30431ed1d7b2011efeaa4ad16b6d Description: AUDO TC1797 EVAL BRD
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BSZ0904NSIATMA1 fundamentals-of-power-semiconductors
BSZ0904NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+24.26 грн
15000+20.97 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IKW50N60TAFKSA1 IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21
IKW50N60TAFKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
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BSZ0901NSATMA1 BSZ0901NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f20f7321863dd
BSZ0901NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSZ0902NSIATMA1 BSZ0902NSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308e38cc9c33f9
BSZ0902NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A TSDSON
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IKW75N60TAFKSA1 IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25
IKW75N60TAFKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
товару немає в наявності
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BSZ0901NSIATMA1 BSZ0901NSI_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f2550ff441cf9
BSZ0901NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 6324 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+119.73 грн
10+73.07 грн
100+48.99 грн
500+36.27 грн
1000+33.15 грн
2000+33.02 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BSZ0904NSIATMA1 fundamentals-of-power-semiconductors
BSZ0904NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V
на замовлення 29832 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+99.12 грн
10+60.32 грн
50+44.88 грн
100+37.44 грн
500+29.22 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BSZ0901NSATMA1 BSZ0901NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f20f7321863dd
BSZ0901NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
на замовлення 962 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+102.29 грн
10+62.00 грн
100+41.18 грн
500+30.27 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
CY14B104NA-BA25I download
CY14B104NA-BA25I
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 48-FBGA (6x10)
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tray
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CY7C1415KV18-250BZCT Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1415KV18-250BZCT
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tape & Reel (TR)
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CY7C1513KV18-200BZXI Infineon-CY7C1526KV18_CY7C1513KV18_CY7C1515KV18_72-Mbit_QDR(R)_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe15e1314b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1513KV18-200BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Memory Organization: 4M x 18
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Мінімальне замовлення: 1360 шт
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CY7C15632KV18-450BZXI download
CY7C15632KV18-450BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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Мінімальне замовлення: 680 шт
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CY7C1565KV18-500BZXI Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1565KV18-500BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 272 шт
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CY7C2563KV18-400BZXI CY7C2561,63,65,76KV18.pdf
CY7C2563KV18-400BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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CY3210-24X33
Виробник: Infineon Technologies
Description: EVALUATION POD CY8C24X33
Accessory Type: Evaluation Pod (EvalPod)
For Use With/Related Products: CY8C24x33
Packaging: Box
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CY7C1308SV25C-167BZCT
CY7C1308SV25C-167BZCT
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
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IR1152SPBF IR1152S.pdf
IR1152SPBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 66KHZ 8SOIC
Current - Startup: 26 µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 66kHz
Voltage - Supply: 14V ~ 17V
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IR1153SPBF ir1153.pdf?fileId=5546d462533600a4015355c42a5b1649
IR1153SPBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 22.2KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 14V ~ 17V
Frequency - Switching: 22.2kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Startup: 26 µA
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IR1155SPBF ir1155spbf.pdf?fileId=5546d462533600a4015355c431f9164b
IR1155SPBF
Виробник: Infineon Technologies
Description: IC PFC CTLR CCM ADJUSTABLE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 12V ~ 19V
Frequency - Switching: Adjustable
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Startup: 175 µA
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IR1153STRPBF ir1153.pdf?fileId=5546d462533600a4015355c42a5b1649
IR1153STRPBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 22.2KHZ 8SOIC
Current - Startup: 26 µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 22.2kHz
Voltage - Supply: 14V ~ 17V
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR1152STRPBF IR1152S.pdf
IR1152STRPBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 66KHZ 8SOIC
Current - Startup: 26 µA
Supplier Device Package: 8-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 66kHz
Voltage - Supply: 14V ~ 17V
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR1155STRPBF ir1155spbf.pdf?fileId=5546d462533600a4015355c431f9164b
IR1155STRPBF
Виробник: Infineon Technologies
Description: IC PFC CTLR CCM ADJUSTABLE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 12V ~ 19V
Frequency - Switching: Adjustable
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 175 µA
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IR1152STRPBF IR1152S.pdf
IR1152STRPBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 66KHZ 8SOIC
Current - Startup: 26 µA
Supplier Device Package: 8-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 66kHz
Voltage - Supply: 14V ~ 17V
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IR1153STRPBF ir1153.pdf?fileId=5546d462533600a4015355c42a5b1649
IR1153STRPBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 22.2KHZ 8SOIC
Current - Startup: 26 µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 22.2kHz
Voltage - Supply: 14V ~ 17V
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF9358TRPBF irf9358pbf.pdf?fileId=5546d462533600a4015356114ffa1da5
IRF9358TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 9.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 9.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
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IRFH5104TR2PBF irfh5104pbf.pdf?fileId=5546d462533600a40153561add341ea4
IRFH5104TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 24A/100A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+91.98 грн
10+74.52 грн
100+67.12 грн
Мінімальне замовлення: 4 шт
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IRFH5204TR2PBF irfh5204pbf.pdf?fileId=5546d462533600a40153561af5511eaa
IRFH5204TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 22A PQFN
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IRFH5215TR2PBF irfh5215pbf.pdf?fileId=5546d462533600a40153561b15111eb2
IRFH5215TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 5.0A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 5V @ 100µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Packaging: Cut Tape (CT)
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IRFH5220TR2PBF irfh5220pbf.pdf?fileId=5546d462533600a40153561b1bf41eb4
IRFH5220TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 3.8A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 5V @ 100µA
Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Packaging: Cut Tape (CT)
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IRL6342TRPBF irl6342pbf.pdf?fileId=5546d462533600a40153565ffb7a2577
IRL6342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 9.9A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IRLHS6242TR2PBF irlhs6242pbf.pdf?fileId=5546d462533600a401535663a52d25a9
IRLHS6242TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 10A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
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IRLHS6342TR2PBF irlhs6342pbf.pdf?fileId=5546d462533600a401535663b52625ad
IRLHS6342TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.7A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
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IRLHS6376TR2PBF irlhs6376pbf.pdf?fileId=5546d462533600a401535663bef425af
IRLHS6376TR2PBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 3.6A 6PQFN
Vgs(th) (Max) @ Id: 1.1V @ 10µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-PQFN (2x2)
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IRFH8318TRPBF irfh8318pbf.pdf?fileId=5546d462533600a40153561fa4111f16
IRFH8318TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 27A/120A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4000+22.78 грн
Мінімальне замовлення: 4000 шт
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IRFH8324TRPBF irfh8324pbf.pdf?fileId=5546d462533600a40153561fb3581f1a
IRFH8324TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/90A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
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IRFH8325TRPBF irfh8325pbf.pdf?fileId=5546d462533600a40153561fbc041f1d
IRFH8325TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A/82A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2487 pF @ 10 V
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IRFH8330TRPBF irfh8330pbf.pdf?fileId=5546d462533600a40153561fc2dc1f1f
IRFH8330TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A/56A PQFN
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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IRFH8334TRPBF irfh8334pbf.pdf?fileId=5546d462533600a40153561fcb3e1f21
IRFH8334TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/44A PQFN
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 3.2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRLHS2242TRPBF irlhs2242pbf.pdf?fileId=5546d462533600a4015356639e1c25a7
IRLHS2242TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 7.2A/15A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4000+9.92 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRFH8324TR2PBF irfh8324pbf.pdf?fileId=5546d462533600a40153561fb3581f1a
IRFH8324TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/90A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRLML2244TRPBF irlml2244pbf.pdf?fileId=5546d462533600a401535664bfff25f0
IRLML2244TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 16 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
IRLML2246TRPBF irlml2246pbf.pdf?fileId=5546d462533600a401535664c91f25f2
IRLML2246TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 2.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 16 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3610STRLPBF irf3610spbf.pdf?fileId=5546d462533600a4015355df39591920
IRF3610STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 103A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8318TR2PBF irfh8318pbf.pdf?fileId=5546d462533600a40153561fa4111f16
IRFH8318TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A 5X6 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8324TR2PBF irfh8324pbf.pdf?fileId=5546d462533600a40153561fb3581f1a
IRFH8324TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/90A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+108.63 грн
10+66.35 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFH8325TR2PBF irfh8325pbf.pdf?fileId=5546d462533600a40153561fbc041f1d
IRFH8325TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A 5X6 PQFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2487 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8330TR2PBF irfh8330pbf.pdf?fileId=5546d462533600a40153561fc2dc1f1f
IRFH8330TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 5X6 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
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IRFH8334TR2PBF irfh8334pbf.pdf?fileId=5546d462533600a40153561fcb3e1f21
IRFH8334TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A 5X6 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
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IRFH8337TR2PBF IRFH8337TR2PbF.pdf
IRFH8337TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 9.7A 5X6 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRLHS2242TR2PBF irlhs2242pbf.pdf?fileId=5546d462533600a4015356639e1c25a7
IRLHS2242TR2PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 5.8A 2X2 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2244TRPBF irlml2244pbf.pdf?fileId=5546d462533600a401535664bfff25f0
IRLML2244TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 16 V
товару немає в наявності
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IRLML2246TRPBF irlml2246pbf.pdf?fileId=5546d462533600a401535664c91f25f2
IRLML2246TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 2.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 16 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8318TRPBF irfh8318pbf.pdf?fileId=5546d462533600a40153561fa4111f16
IRFH8318TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 27A/120A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 10 V
на замовлення 14699 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+91.98 грн
10+55.82 грн
100+36.78 грн
500+26.87 грн
1000+24.40 грн
2000+22.33 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFH8324TRPBF irfh8324pbf.pdf?fileId=5546d462533600a40153561fb3581f1a
IRFH8324TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/90A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
12+27.75 грн
13+24.89 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
IRFH8334TRPBF irfh8334pbf.pdf?fileId=5546d462533600a40153561fcb3e1f21
IRFH8334TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/44A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8+43.61 грн
13+24.05 грн
100+18.26 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IRLHS2242TRPBF irlhs2242pbf.pdf?fileId=5546d462533600a4015356639e1c25a7
IRLHS2242TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 7.2A/15A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V
на замовлення 5142 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8+45.20 грн
12+26.65 грн
100+17.07 грн
500+12.15 грн
1000+10.90 грн
2000+9.85 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IRF3610SPBF irf3610spbf.pdf?fileId=5546d462533600a4015355df39591920
IRF3610SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 103A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
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KIT_TC1791_SK Microcontroller-TriCore-Brochure-2011-Infineon.pdf?folderId=db3a304412b407950112b409ae660342&fileId=db3a30431f848401011fc664882a7648
Виробник: Infineon Technologies
Description: KIT STARTER AUDO MAX TC1791
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
KIT_TC1793_SK Microcontroller-TriCore-Brochure-2011-Infineon.pdf?folderId=db3a304412b407950112b409ae660342&fileId=db3a30431f848401011fc664882a7648
Виробник: Infineon Technologies
Description: KIT STARTER AUDO MAX TC1793
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KIT_TC1797_SK TC1797_DS_V1+3.pdf?fileId=db3a30431ed1d7b2011efeaa4ad16b6d
Виробник: Infineon Technologies
Description: AUDO TC1797 EVAL BRD
товару немає в наявності
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