Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117853) > Сторінка 184 з 1965
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BSS83PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 330MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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BSS84PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 170MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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BSV236SPH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 20V 1.5A SOT363-6Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V Power Dissipation (Max): 560mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 8µA Supplier Device Package: PG-SOT363-PO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BTS3800SLHTSA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 SCT595Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 800mOhm Input Type: Non-Inverting Voltage - Load: 41V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 350mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-SCT595-5-1 Fault Protection: Over Temperature, Over Voltage Part Status: Active |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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ESD3V3U4ULCE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 11VC TSLP-9-1Packaging: Tape & Reel (TR) Package / Case: 9-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSLP-9-1 Unidirectional Channels: 4 Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power Line Protection: No Part Status: Obsolete |
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ESD5V0L1B02VH6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5VWM 25VC PGSC7921Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: PG-SC79-2-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 25V (Typ) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ESD5V0S1U02VH6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5VWM 14.5V PGSC7921Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: PG-SC79-2-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.7V Voltage - Clamping (Max) @ Ipp: 14.5V (Typ) Power - Peak Pulse: 66W Power Line Protection: No Part Status: Active |
на замовлення 207000 шт: термін постачання 21-31 дні (днів) |
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ESD5V3S1B02LSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.3VWM 26VC PGTSSLP21Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 17pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSSLP-2-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 26V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ESD5V3S1U02LSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.3VWM 15VC TSSLP-2-1Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V Supplier Device Package: PG-TSSLP-2-1 Unidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 15V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ESD5V5U5ULCE6327HTSA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 12VC PGSC746Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 0.45pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-SC74-6 Unidirectional Channels: 5 Voltage - Clamping (Max) @ Ipp: 12V (Typ) Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ESD8V0R1B02ELSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 14VWM 28VC TSSLP-2Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 4pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PG-TSSLP-2-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.5V Voltage - Clamping (Max) @ Ipp: 28V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ILD2035E6327HTSA1 | Infineon Technologies |
Description: IC LED DRVR RGLTR 350MA SC74-3DPackaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 120kHz Type: DC DC Regulator Applications: Lighting Current - Output / Channel: 350mA Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: SC-74-3D Voltage - Supply (Min): 8V Voltage - Supply (Max): 22V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPL60R199CPAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 16.4A 4VSONPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 660µA Supplier Device Package: PG-VSON-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IPL60R299CPAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 11.1A 4VSONPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-VSON-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
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IPL60R385CPAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9A 4VSONPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-VSON-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KP215F1701XTMA1 | Infineon Technologies |
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KP216H1416XTMA1 | Infineon Technologies |
Description: SENSOR 21.76PSIA 4.5V DSOF8Packaging: Tape & Reel (TR) Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.5 V ~ 4.5 V Operating Pressure: 7.25PSI ~ 21.76PSI (50kPa ~ 150kPa) Pressure Type: Absolute Accuracy: ±0.345PSI (±2.38kPa) Operating Temperature: -40°C ~ 140°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KP219N3621XTMA1 | Infineon Technologies |
Description: SENSOR 14.79PSIA 4.95VPackaging: Tape & Reel (TR) Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.25 V ~ 4.95 V Operating Pressure: 2.18PSI ~ 14.79PSI (15kPa ~ 102kPa) Pressure Type: Absolute Accuracy: ±0.652PSI (±4.5kPa) Operating Temperature: -40°C ~ 125°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Port Style: No Port Part Status: Active |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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KP235XTMA1 | Infineon Technologies |
Description: SENSOR 16.68PSIA 4.5V DSOF8-16Packaging: Tape & Reel (TR) Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.5 V ~ 4.5 V Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa) Pressure Type: Absolute Accuracy: ±0.348PSI (±2.4kPa) Operating Temperature: -40°C ~ 125°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Port Style: No Port Maximum Pressure: 21.76PSI (150kPa) Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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KP236XTMA1 | Infineon Technologies |
Description: SENSOR 16.68PSIA 4.5V DSOF8-16Packaging: Tape & Reel (TR) Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.5 V ~ 4.5 V Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa) Pressure Type: Absolute Accuracy: ±0.29PSI (±2kPa) Operating Temperature: -40°C ~ 125°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Port Style: No Port Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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KP236N6165XTMA2 | Infineon Technologies |
Description: IC ANLG BAROMETRIC SNSR DSOF8-16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PTFA220081MV4XUMA1 | Infineon Technologies |
Description: FET RF LDMOS 8W SON10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFA220121MV4XUMA1 | Infineon Technologies |
Description: FET RF LDMOS 10W SON10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTMA180402FL V1 R250 | Infineon Technologies |
Description: IC AMP RF LDMOS 40W H34265-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SN7002N H6327 | Infineon Technologies |
Description: MOSFET N-CH 60V 200MA SOT23 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTFA070601FV4XWSA1 | Infineon Technologies |
Description: FET RF LDMOS 60W H37265-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTFA071701FV4XWSA1 | Infineon Technologies |
Description: FET RF LDMOS 170W H37248-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTFB191501FV1XWSA1 | Infineon Technologies |
Description: FET RF LDMOS 150W H37248-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTFB210801FAV1XWSA1 | Infineon Technologies |
Description: FET RF LDMOS 80W H37265-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTFB211501FV1XWSA1 | Infineon Technologies | Description: FET FR LDMOS 150W H37248-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTFA041501FV4XWSA1 | Infineon Technologies |
Description: FET RF LDMOS 150W H37248-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BUZ30AHXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 21A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BUZ31HXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 14.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V |
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BUZ31L H | Infineon Technologies |
Description: MOSFET N-CH 200V 13.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 7A, 5V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||
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BUZ73HXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 7A TO220-3 |
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В кошику од. на суму грн. | ||||||||||||
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BUZ73H3046XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 7A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||
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BUZ73A H | Infineon Technologies |
Description: MOSFET N-CH 200V 5.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BUZ73A H3046 | Infineon Technologies |
Description: MOSFET N-CH 200V 5.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||
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BUZ73ALHXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 5.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||
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BUZ73LHXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 7A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 5V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V |
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ICE2PCS06HKLA1 | Infineon Technologies |
Description: IC PFC CTRLR CCM 70KHZ 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Voltage - Supply: 11V ~ 26V Frequency - Switching: 58kHz ~ 70kHz Mode: Continuous Conduction (CCM) Supplier Device Package: PG-DIP-8 Current - Startup: 450 µA |
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ICLS6021JXKLA1 | Infineon Technologies |
Description: IC LED DRIVER OFFLINE DIM 8DIP |
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ICLS6022JXKLA1 | Infineon Technologies |
Description: IC LED DRIVER OFFLINE DIM 8DIP |
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ICLS6023JXKLA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL PWM 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Outputs: 1 Frequency: 67kHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): Yes Topology: Flyback Supplier Device Package: PG-DIP-8-6 Dimming: PWM Voltage - Supply (Min): 10.3V Voltage - Supply (Max): 26V |
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ICLS8023ZXKLA1 | Infineon Technologies |
Description: IC LED DRIVER OFFLINE DIM 7DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Number of Outputs: 1 Frequency: 65kHz Type: AC DC Offline Switcher Operating Temperature: -25°C ~ 130°C (TJ) Internal Switch(s): Yes Topology: Flyback Supplier Device Package: PG-DIP-7-1 Dimming: PWM Voltage - Supply (Min): 10.5V Voltage - Supply (Max): 25V Part Status: Obsolete |
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В кошику од. на суму грн. | ||||||||||||
| IDY10S120XKSA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 5A PGTO247HC3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 250pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO247HC-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 120 µA @ 1200 V |
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| IDY15S120XKSA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 7.5A PGTO247HC3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 375pF @ 1V, 1MHz Current - Average Rectified (Io): 7.5A Supplier Device Package: PG-TO247HC-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 180 µA @ 1200 V |
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IGA30N60H3XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 18A TO220-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: PG-TO220-3-31 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/207ns Switching Energy: 1.17mJ Test Condition: 400V, 30A, 10.5Ohm, 15V Gate Charge: 165 nC Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 43 W |
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IGW20N60H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 40A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/194ns Switching Energy: 800µJ Test Condition: 400V, 20A, 14.6Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 170 W |
на замовлення 295 шт: термін постачання 21-31 дні (днів) |
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IGW30N60H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 60A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 21ns/207ns Switching Energy: 1.38mJ Test Condition: 400V, 30A, 10.5Ohm, 15V Gate Charge: 165 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 187 W |
на замовлення 4832 шт: термін постачання 21-31 дні (днів) |
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IHW20N135R3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH 1350V 40A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Td (on/off) @ 25°C: -/335ns Switching Energy: 1.3mJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 195 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 60 A Power - Max: 310 W |
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IHW30N110R3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH 1100V 60A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Td (on/off) @ 25°C: -/350ns Switching Energy: 1.15mJ (off) Test Condition: 600V, 30A, 15Ohm, 15V Gate Charge: 180 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1100 V Current - Collector Pulsed (Icm): 90 A Power - Max: 333 W |
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| IHY20N135R3XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 1350V 40A TO247HC-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Supplier Device Package: PG-TO247HC-3 IGBT Type: Trench Td (on/off) @ 25°C: -/335ns Switching Energy: 1.3mJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 195 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 60 A Power - Max: 310 W |
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| IHY30N160R2XKSA1 | Infineon Technologies |
Description: IGBT NPT 1600V 60A TO247HC-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: PG-TO247HC-3 IGBT Type: NPT Td (on/off) @ 25°C: -/525ns Switching Energy: 2.53mJ Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 312 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IKW20N60TAFKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 40A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 770µJ Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 166 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IKW30N60TAFKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 60A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 143 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A Supplier Device Package: PG-TO247-3-21 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/254ns Switching Energy: 1.46mJ Test Condition: 400V, 30A, 10.6Ohm, 15V Gate Charge: 167 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 187 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IKW50N60H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 100A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 130 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/235ns Switching Energy: 2.36mJ Test Condition: 400V, 50A, 7Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 333 W |
на замовлення 680 шт: термін постачання 21-31 дні (днів) |
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IPA057N06N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 60A TO220-3-31Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 58µA Supplier Device Package: PG-TO220-3-31 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V |
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В кошику од. на суму грн. | ||||||||||||
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IPA093N06N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 43A TO220-3-31Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 34µA Supplier Device Package: PG-TO220-3-31 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V |
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В кошику од. на суму грн. | ||||||||||||
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IPA65R110CFDXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 31.2A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 34.7W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO220-3-111 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V |
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В кошику од. на суму грн. |
| BSS83PH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.23 грн |
| 6000+ | 5.43 грн |
| 9000+ | 5.14 грн |
| 15000+ | 4.51 грн |
| 21000+ | 4.33 грн |
| 30000+ | 4.15 грн |
| BSS84PH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BSV236SPH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 560mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 8µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 560mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 8µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.62 грн |
| 6000+ | 5.78 грн |
| BTS3800SLHTSA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 SCT595
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 800mOhm
Input Type: Non-Inverting
Voltage - Load: 41V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 350mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SCT595-5-1
Fault Protection: Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 SCT595
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 800mOhm
Input Type: Non-Inverting
Voltage - Load: 41V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 350mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SCT595-5-1
Fault Protection: Over Temperature, Over Voltage
Part Status: Active
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.86 грн |
| 6000+ | 23.35 грн |
| 9000+ | 23.06 грн |
| 15000+ | 21.33 грн |
| 21000+ | 21.15 грн |
| ESD3V3U4ULCE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC TSLP-9-1
Packaging: Tape & Reel (TR)
Package / Case: 9-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-9-1
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 11VC TSLP-9-1
Packaging: Tape & Reel (TR)
Package / Case: 9-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-9-1
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Obsolete
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| ESD5V0L1B02VH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 25VC PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 25VC PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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| ESD5V0S1U02VH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 14.5V PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 66W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 14.5V PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 66W
Power Line Protection: No
Part Status: Active
на замовлення 207000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.21 грн |
| 6000+ | 6.29 грн |
| 9000+ | 5.96 грн |
| 15000+ | 5.25 грн |
| 21000+ | 5.04 грн |
| 30000+ | 4.84 грн |
| ESD5V3S1B02LSE6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 26VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 26V
Power Line Protection: No
Description: TVS DIODE 5.3VWM 26VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 26V
Power Line Protection: No
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| ESD5V3S1U02LSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 15VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Description: TVS DIODE 5.3VWM 15VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
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| ESD5V5U5ULCE6327HTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 12VC PGSC746
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 5
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Description: TVS DIODE 5.5VWM 12VC PGSC746
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 5
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.22 грн |
| ESD8V0R1B02ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Description: TVS DIODE 14VWM 28VC TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
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| ILD2035E6327HTSA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR 350MA SC74-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74-3D
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 22V
Description: IC LED DRVR RGLTR 350MA SC74-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74-3D
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 22V
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| IPL60R199CPAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Description: MOSFET N-CH 600V 16.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 91.61 грн |
| IPL60R299CPAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11.1A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 600V 11.1A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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| IPL60R385CPAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
Description: MOSFET N-CH 600V 9A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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| KP215F1701XTMA1 |
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Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
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| KP216H1416XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SENSOR 21.76PSIA 4.5V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 7.25PSI ~ 21.76PSI (50kPa ~ 150kPa)
Pressure Type: Absolute
Accuracy: ±0.345PSI (±2.38kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR 21.76PSIA 4.5V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 7.25PSI ~ 21.76PSI (50kPa ~ 150kPa)
Pressure Type: Absolute
Accuracy: ±0.345PSI (±2.38kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| KP219N3621XTMA1 |
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Виробник: Infineon Technologies
Description: SENSOR 14.79PSIA 4.95V
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.25 V ~ 4.95 V
Operating Pressure: 2.18PSI ~ 14.79PSI (15kPa ~ 102kPa)
Pressure Type: Absolute
Accuracy: ±0.652PSI (±4.5kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Active
Description: SENSOR 14.79PSIA 4.95V
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.25 V ~ 4.95 V
Operating Pressure: 2.18PSI ~ 14.79PSI (15kPa ~ 102kPa)
Pressure Type: Absolute
Accuracy: ±0.652PSI (±4.5kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Active
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 288.16 грн |
| KP235XTMA1 |
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Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.348PSI (±2.4kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.348PSI (±2.4kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 239.42 грн |
| KP236XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 195.40 грн |
| KP236N6165XTMA2 |
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Виробник: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8-16
Description: IC ANLG BAROMETRIC SNSR DSOF8-16
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| PTFA220081MV4XUMA1 |
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Виробник: Infineon Technologies
Description: FET RF LDMOS 8W SON10
Description: FET RF LDMOS 8W SON10
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| PTFA220121MV4XUMA1 |
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Виробник: Infineon Technologies
Description: FET RF LDMOS 10W SON10
Description: FET RF LDMOS 10W SON10
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| PTMA180402FL V1 R250 |
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Виробник: Infineon Technologies
Description: IC AMP RF LDMOS 40W H34265-8
Description: IC AMP RF LDMOS 40W H34265-8
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| SN7002N H6327 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23
Description: MOSFET N-CH 60V 200MA SOT23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTFA070601FV4XWSA1 |
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Виробник: Infineon Technologies
Description: FET RF LDMOS 60W H37265-2
Description: FET RF LDMOS 60W H37265-2
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| PTFA071701FV4XWSA1 |
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Виробник: Infineon Technologies
Description: FET RF LDMOS 170W H37248-2
Description: FET RF LDMOS 170W H37248-2
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| PTFB191501FV1XWSA1 |
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Виробник: Infineon Technologies
Description: FET RF LDMOS 150W H37248-2
Description: FET RF LDMOS 150W H37248-2
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| PTFB210801FAV1XWSA1 |
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Виробник: Infineon Technologies
Description: FET RF LDMOS 80W H37265-2
Description: FET RF LDMOS 80W H37265-2
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| PTFB211501FV1XWSA1 |
Виробник: Infineon Technologies
Description: FET FR LDMOS 150W H37248-2
Description: FET FR LDMOS 150W H37248-2
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| PTFA041501FV4XWSA1 |
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Виробник: Infineon Technologies
Description: FET RF LDMOS 150W H37248-2
Description: FET RF LDMOS 150W H37248-2
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| BUZ30AHXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 200V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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| BUZ31HXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 14.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Description: MOSFET N-CH 200V 14.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
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| BUZ31L H |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 13.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 200V 13.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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| BUZ73HXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO220-3
Description: MOSFET N-CH 200V 7A TO220-3
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| BUZ73H3046XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Description: MOSFET N-CH 200V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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| BUZ73A H |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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| BUZ73A H3046 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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| BUZ73ALHXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
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| BUZ73LHXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Description: MOSFET N-CH 200V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
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| ICE2PCS06HKLA1 |
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Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 70KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
Description: IC PFC CTRLR CCM 70KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
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| ICLS6021JXKLA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFLINE DIM 8DIP
Description: IC LED DRIVER OFFLINE DIM 8DIP
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| ICLS6022JXKLA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFLINE DIM 8DIP
Description: IC LED DRIVER OFFLINE DIM 8DIP
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| ICLS6023JXKLA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 67kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DIP-8-6
Dimming: PWM
Voltage - Supply (Min): 10.3V
Voltage - Supply (Max): 26V
Description: IC LED DRIVER OFFL PWM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 67kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DIP-8-6
Dimming: PWM
Voltage - Supply (Min): 10.3V
Voltage - Supply (Max): 26V
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| ICLS8023ZXKLA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFLINE DIM 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 65kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 130°C (TJ)
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DIP-7-1
Dimming: PWM
Voltage - Supply (Min): 10.5V
Voltage - Supply (Max): 25V
Part Status: Obsolete
Description: IC LED DRIVER OFFLINE DIM 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 65kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 130°C (TJ)
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DIP-7-1
Dimming: PWM
Voltage - Supply (Min): 10.5V
Voltage - Supply (Max): 25V
Part Status: Obsolete
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| IDY10S120XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 5A PGTO247HC3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO247HC-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Description: DIODE SIC 1.2KV 5A PGTO247HC3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO247HC-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
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| IDY15S120XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 7.5A PGTO247HC3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 375pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: PG-TO247HC-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
Description: DIODE SIC 1.2KV 7.5A PGTO247HC3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 375pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: PG-TO247HC-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
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| IGA30N60H3XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
Description: IGBT TRENCH FS 600V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
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| IGW20N60H3FKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/194ns
Switching Energy: 800µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
Description: IGBT TRENCH FS 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/194ns
Switching Energy: 800µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
на замовлення 295 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 203.16 грн |
| 30+ | 105.37 грн |
| 120+ | 85.40 грн |
| IGW30N60H3FKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
на замовлення 4832 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 248.65 грн |
| 30+ | 130.02 грн |
| 120+ | 105.94 грн |
| 510+ | 82.83 грн |
| 1020+ | 76.78 грн |
| 2010+ | 71.79 грн |
| IHW20N135R3FKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH 1350V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
Description: IGBT TRENCH 1350V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
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| IHW30N110R3FKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH 1100V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/350ns
Switching Energy: 1.15mJ (off)
Test Condition: 600V, 30A, 15Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1100 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 333 W
Description: IGBT TRENCH 1100V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/350ns
Switching Energy: 1.15mJ (off)
Test Condition: 600V, 30A, 15Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1100 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 333 W
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В кошику
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| IHY20N135R3XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH 1350V 40A TO247HC-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247HC-3
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
Description: IGBT TRENCH 1350V 40A TO247HC-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247HC-3
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
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| IHY30N160R2XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT NPT 1600V 60A TO247HC-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO247HC-3
IGBT Type: NPT
Td (on/off) @ 25°C: -/525ns
Switching Energy: 2.53mJ
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
Description: IGBT NPT 1600V 60A TO247HC-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO247HC-3
IGBT Type: NPT
Td (on/off) @ 25°C: -/525ns
Switching Energy: 2.53mJ
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
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| IKW20N60TAFKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
Description: IGBT TRENCH FS 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
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| IKW30N60TAFKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
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В кошику
од. на суму грн.
| IKW50N60H3FKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
на замовлення 680 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 372.59 грн |
| 30+ | 202.73 грн |
| 120+ | 168.27 грн |
| 510+ | 134.21 грн |
| IPA057N06N3GXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
Description: MOSFET N-CH 60V 60A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
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| IPA093N06N3GXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Description: MOSFET N-CH 60V 43A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
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| IPA65R110CFDXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Description: MOSFET N-CH 650V 31.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
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од. на суму грн.





























