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IPD60R1K4C6 IPD60R1K4C6 Infineon Technologies Infineon-IPD60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129eef00aaa05e5 Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R3K3C6 IPD60R3K3C6 Infineon Technologies Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Description: MOSFET N-CH 600V 1.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V
Power Dissipation (Max): 18.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R380C6BTMA1 IPD65R380C6BTMA1 Infineon Technologies Infineon-IPD65R380C6-DS-v02_02-en.pdf?fileId=db3a30433efacd9a013f095378172fa3 Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IKW40N60H3FKSA1 IKW40N60H3FKSA1 Infineon Technologies IKW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293aacb8b8002d Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 124 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
на замовлення 1078 шт:
термін постачання 21-31 дні (днів)
1+419.97 грн
30+228.17 грн
120+189.50 грн
510+151.24 грн
1020+145.32 грн
В кошику  од. на суму  грн.
IPW60R041C6FKSA1 IPW60R041C6FKSA1 Infineon Technologies IPW60R041C6_2.1_.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304327b897500127f24dd83c3c09 Description: MOSFET N-CH 600V 77.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 10 V
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
1+1110.65 грн
30+655.50 грн
120+575.04 грн
В кошику  од. на суму  грн.
BSC011N03LSATMA1 BSC011N03LSATMA1 Infineon Technologies BSC011N03LS_Rev+1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbb2c20ff02a0 Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 31988 шт:
термін постачання 21-31 дні (днів)
3+119.08 грн
10+81.34 грн
100+59.48 грн
500+47.08 грн
1000+44.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC0901NS BSC0901NS Infineon Technologies BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376 Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 9190 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0902NS BSC0902NS Infineon Technologies BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5 Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 17985 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0902NSI BSC0902NSI Infineon Technologies BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424 Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 24617 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0908NSATMA1 BSC0908NSATMA1 Infineon Technologies BSC0908NS.pdf Description: MOSFET N-CH 34V 14A/49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC0909NSATMA1 BSC0909NSATMA1 Infineon Technologies BSC0909NS_Rev+3.2.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a3043284aacd80128826aeb7653f0 Description: MOSFET N-CH 34V 12A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
на замовлення 8343 шт:
термін постачання 21-31 дні (днів)
5+65.10 грн
10+38.76 грн
100+25.17 грн
500+18.11 грн
1000+16.33 грн
2000+14.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSC12DN20NS3 G BSC12DN20NS3 G Infineon Technologies BSC12DN20NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b146334d419ec Description: MOSFET N-CH 200V 11.3A 8TDSON
на замовлення 9186 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC16DN25NS3GATMA1 BSC16DN25NS3GATMA1 Infineon Technologies BSC16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1564f4541a33 Description: MOSFET N-CH 250V 10.9A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
на замовлення 6996 шт:
термін постачання 21-31 дні (днів)
2+191.33 грн
10+118.57 грн
100+81.46 грн
500+61.53 грн
1000+56.73 грн
2000+52.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC900N20NS3GATMA1 BSC900N20NS3GATMA1 Infineon Technologies BSC900N20NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b144f6b0619db Description: MOSFET N-CH 200V 15.2A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
на замовлення 5089 шт:
термін постачання 21-31 дні (днів)
2+162.75 грн
10+100.45 грн
100+68.41 грн
500+51.30 грн
1000+47.15 грн
2000+43.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSZ12DN20NS3GATMA1 BSZ12DN20NS3GATMA1 Infineon Technologies BSZ12DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15920ed91a5a Description: MOSFET N-CH 200V 11.3A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
на замовлення 3429 шт:
термін постачання 21-31 дні (днів)
3+141.31 грн
10+86.85 грн
100+58.67 грн
500+43.72 грн
1000+40.07 грн
2000+37.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSZ22DN20NS3GATMA1 BSZ22DN20NS3GATMA1 Infineon Technologies BSZ22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15ceb1741a7c Description: MOSFET N-CH 200V 7A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
на замовлення 6471 шт:
термін постачання 21-31 дні (днів)
4+89.71 грн
10+61.24 грн
100+47.61 грн
500+35.55 грн
1000+31.95 грн
2000+31.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ900N20NS3GATMA1 BSZ900N20NS3GATMA1 Infineon Technologies BSZ900N20NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15f1be561a9b Description: MOSFET N-CH 200V 15.2A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
на замовлення 2229 шт:
термін постачання 21-31 дні (днів)
3+129.40 грн
10+87.30 грн
100+58.96 грн
500+43.94 грн
1000+40.28 грн
2000+39.15 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD60R1K4C6 IPD60R1K4C6 Infineon Technologies Infineon-IPD60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129eef00aaa05e5 Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R3K3C6 IPD60R3K3C6 Infineon Technologies Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Description: MOSFET N-CH 600V 1.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V
Power Dissipation (Max): 18.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R380C6BTMA1 IPD65R380C6BTMA1 Infineon Technologies Infineon-IPD65R380C6-DS-v02_02-en.pdf?fileId=db3a30433efacd9a013f095378172fa3 Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R450E6 IPD60R450E6 Infineon Technologies Infineon--DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a196a77652b30 Description: MOSFET N-CH 600V 9.2A TO252-3
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0901NS BSC0901NS Infineon Technologies BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376 Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 9190 шт:
термін постачання 21-31 дні (днів)
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BSC0902NS BSC0902NS Infineon Technologies BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5 Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 17985 шт:
термін постачання 21-31 дні (днів)
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BSC0902NSI BSC0902NSI Infineon Technologies BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424 Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 24617 шт:
термін постачання 21-31 дні (днів)
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BSC12DN20NS3 G BSC12DN20NS3 G Infineon Technologies BSC12DN20NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b146334d419ec Description: MOSFET N-CH 200V 11.3A 8TDSON
на замовлення 9186 шт:
термін постачання 21-31 дні (днів)
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IPD60R450E6 IPD60R450E6 Infineon Technologies Infineon--DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a196a77652b30 Description: MOSFET N-CH 600V 9.2A TO252-3
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
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CY14B256LA-ZS25XI CY14B256LA-ZS25XI Infineon Technologies Infineon-CY14B256LA_256-Kbit_(32_K_8)_nvSRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd9bf63054 Description: IC NVSRAM 256KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
1+1375.02 грн
10+1174.94 грн
25+1120.31 грн
40+1026.00 грн
135+963.07 грн
270+928.90 грн
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CY62126EV30LL-45ZSXA CY62126EV30LL-45ZSXA Infineon Technologies CY62126EV30_RevH.pdf Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 1335 шт:
термін постачання 21-31 дні (днів)
1+324.70 грн
10+277.82 грн
25+264.85 грн
40+242.57 грн
135+227.72 грн
270+222.02 грн
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CY62167EV18LL-55BVI CY62167EV18LL-55BVI Infineon Technologies Infineon-CY62167EV18_MoBL_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe53a531d2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1245KV18-400BZC CY7C1245KV18-400BZC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
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CY7C1250KV18-450BZXC CY7C1250KV18-450BZXC Infineon Technologies CY7C1246%2C48%2C50%2C57KV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1268KV18-450BZXC CY7C1268KV18-450BZXC Infineon Technologies CY7C12%2868%2C70%29KV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1312KV18-250BZC CY7C1312KV18-250BZC Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1413KV18-250BZC CY7C1413KV18-250BZC Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1414KV18-250BZXC CY7C1414KV18-250BZXC Infineon Technologies download Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1415KV18-250BZC CY7C1415KV18-250BZC Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1415KV18-250BZXC CY7C1415KV18-250BZXC Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1415KV18-333BZC CY7C1415KV18-333BZC Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1418KV18-250BZC CY7C1418KV18-250BZC Infineon Technologies Infineon-CY7C1418KV18_CY7C1420KV18_36-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1b25e368a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1425KV18-250BZC CY7C1425KV18-250BZC Infineon Technologies download Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 9
DigiKey Programmable: Not Verified
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+3867.05 грн
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CY7C1911KV18-333BZC CY7C1911KV18-333BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 9
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C2163KV18-550BZXI CY7C2163KV18-550BZXI Infineon Technologies Infineon-CY7C2163KV18_CY7C2165KV18_18_MBIT_QDR_II+_SRAM_FOUR_WORD_BURST_ARCHITECTURE_(2.5_CYCLE_READ_LATENCY)_WITH_ODT-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde2e830e1&utm_source=cypress&utm_medium=referral&utm Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C2165KV18-550BZC CY7C2165KV18-550BZC Infineon Technologies Infineon-CY7C2163KV18_CY7C2165KV18_18_MBIT_QDR_II+_SRAM_FOUR_WORD_BURST_ARCHITECTURE_(2.5_CYCLE_READ_LATENCY)_WITH_ODT-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde2e830e1&utm_source=cypress&utm_medium=referral&utm Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C2168KV18-550BZC CY7C2168KV18-550BZC Infineon Technologies Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_ Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C2170KV18-400BZXC CY7C2170KV18-400BZXC Infineon Technologies Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_ Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C2170KV18-550BZXC CY7C2170KV18-550BZXC Infineon Technologies Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_ Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C2268KV18-550BZC CY7C2268KV18-550BZC Infineon Technologies Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C2270KV18-400BZXC CY7C2270KV18-400BZXC Infineon Technologies Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665 Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+6578.98 грн
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CY8C21345-12PVXE CY8C21345-12PVXE Infineon Technologies download Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Discontinued at Digi-Key
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C21512-24PVXA CY8C21512-24PVXA Infineon Technologies Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Discontinued at Digi-Key
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C22345-12PVXE CY8C22345-12PVXE Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
товару немає в наявності
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IRLR6225TRPBF IRLR6225TRPBF Infineon Technologies irlr6225pbf.pdf?fileId=5546d462533600a40153566d99bc26c1 Description: MOSFET N-CH 20V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 21A, 4.5V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+28.74 грн
4000+25.59 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRLML6344TRPBF IRLML6344TRPBF Infineon Technologies irlml6344pbf.pdf?fileId=5546d462533600a4015356689c44262c Description: MOSFET N-CH 30V 5A MICRO3/SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
на замовлення 6450 шт:
термін постачання 21-31 дні (днів)
3000+6.76 грн
6000+5.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLML6346TRPBF IRLML6346TRPBF Infineon Technologies irlml6346pbf.pdf?fileId=5546d462533600a401535668a336262e Description: MOSFET N-CH 30V 3.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 24 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 24
товару немає в наявності
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IRFML8244TRPBF IRFML8244TRPBF Infineon Technologies irfml8244pbf.pdf?fileId=5546d462533600a40153562817c91fc0 Description: MOSFET N-CH 25V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 10µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+6.20 грн
6000+5.75 грн
9000+5.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFHS9301TR2PBF IRFHS9301TR2PBF Infineon Technologies irfhs9301pbf.pdf?fileId=5546d462533600a401535623a01c1f61 Description: MOSFET P-CH 30V 6A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
товару немає в наявності
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IRFHS8242TR2PBF IRFHS8242TR2PBF Infineon Technologies irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d Description: MOSFET N-CH 25V 9.9A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
товару немає в наявності
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IRFHS9351TR2PBF IRFHS9351TR2PBF Infineon Technologies irfhs9351pbf.pdf?fileId=5546d462533600a401535623a8d41f63 Description: MOSFET 2P-CH 30V 2.3A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Obsolete
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IRFHS8342TR2PBF IRFHS8342TR2PBF Infineon Technologies irfhs8342pbf.pdf?fileId=5546d462533600a401535623992e1f5f Description: MOSFET N-CH 30V 8.8A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PG-TSDSON-6
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
товару немає в наявності
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IRFML8244TRPBF IRFML8244TRPBF Infineon Technologies irfml8244pbf.pdf?fileId=5546d462533600a40153562817c91fc0 Description: MOSFET N-CH 25V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 10µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 11702 шт:
термін постачання 21-31 дні (днів)
12+27.79 грн
18+17.89 грн
100+8.99 грн
500+8.30 грн
1000+7.39 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
IPD60R1K4C6 Infineon-IPD60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129eef00aaa05e5
IPD60R1K4C6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
товару немає в наявності
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IPD60R3K3C6 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
IPD60R3K3C6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 1.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V
Power Dissipation (Max): 18.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
товару немає в наявності
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IPD65R380C6BTMA1 Infineon-IPD65R380C6-DS-v02_02-en.pdf?fileId=db3a30433efacd9a013f095378172fa3
IPD65R380C6BTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IKW40N60H3FKSA1 IKW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293aacb8b8002d
IKW40N60H3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 124 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
на замовлення 1078 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+419.97 грн
30+228.17 грн
120+189.50 грн
510+151.24 грн
1020+145.32 грн
В кошику  од. на суму  грн.
IPW60R041C6FKSA1 IPW60R041C6_2.1_.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304327b897500127f24dd83c3c09
IPW60R041C6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 77.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 10 V
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1110.65 грн
30+655.50 грн
120+575.04 грн
В кошику  од. на суму  грн.
BSC011N03LSATMA1 BSC011N03LS_Rev+1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbb2c20ff02a0
BSC011N03LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 31988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.08 грн
10+81.34 грн
100+59.48 грн
500+47.08 грн
1000+44.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC0901NS BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376
BSC0901NS
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 9190 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0902NS BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5
BSC0902NS
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 17985 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0902NSI BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424
BSC0902NSI
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 24617 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0908NSATMA1 BSC0908NS.pdf
BSC0908NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 14A/49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
товару немає в наявності
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BSC0909NSATMA1 BSC0909NS_Rev+3.2.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a3043284aacd80128826aeb7653f0
BSC0909NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 12A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
на замовлення 8343 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+65.10 грн
10+38.76 грн
100+25.17 грн
500+18.11 грн
1000+16.33 грн
2000+14.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSC12DN20NS3 G BSC12DN20NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b146334d419ec
BSC12DN20NS3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 11.3A 8TDSON
на замовлення 9186 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC16DN25NS3GATMA1 BSC16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1564f4541a33
BSC16DN25NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 10.9A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
на замовлення 6996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.33 грн
10+118.57 грн
100+81.46 грн
500+61.53 грн
1000+56.73 грн
2000+52.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC900N20NS3GATMA1 BSC900N20NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b144f6b0619db
BSC900N20NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 15.2A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
на замовлення 5089 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+162.75 грн
10+100.45 грн
100+68.41 грн
500+51.30 грн
1000+47.15 грн
2000+43.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSZ12DN20NS3GATMA1 BSZ12DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15920ed91a5a
BSZ12DN20NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 11.3A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
на замовлення 3429 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.31 грн
10+86.85 грн
100+58.67 грн
500+43.72 грн
1000+40.07 грн
2000+37.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSZ22DN20NS3GATMA1 BSZ22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15ceb1741a7c
BSZ22DN20NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
на замовлення 6471 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.71 грн
10+61.24 грн
100+47.61 грн
500+35.55 грн
1000+31.95 грн
2000+31.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ900N20NS3GATMA1 BSZ900N20NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15f1be561a9b
BSZ900N20NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 15.2A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
на замовлення 2229 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+129.40 грн
10+87.30 грн
100+58.96 грн
500+43.94 грн
1000+40.28 грн
2000+39.15 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD60R1K4C6 Infineon-IPD60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129eef00aaa05e5
IPD60R1K4C6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
товару немає в наявності
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IPD60R3K3C6 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
IPD60R3K3C6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 1.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V
Power Dissipation (Max): 18.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
товару немає в наявності
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IPD65R380C6BTMA1 Infineon-IPD65R380C6-DS-v02_02-en.pdf?fileId=db3a30433efacd9a013f095378172fa3
IPD65R380C6BTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
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IPD60R450E6 Infineon--DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a196a77652b30
IPD60R450E6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.2A TO252-3
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0901NS BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376
BSC0901NS
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 9190 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0902NS BSC0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cc053cffb38b5
BSC0902NS
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 17985 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0902NSI BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424
BSC0902NSI
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A 8TDSON
на замовлення 24617 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC12DN20NS3 G BSC12DN20NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b146334d419ec
BSC12DN20NS3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 11.3A 8TDSON
на замовлення 9186 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPD60R450E6 Infineon--DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a196a77652b30
IPD60R450E6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.2A TO252-3
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CY14B256LA-ZS25XI Infineon-CY14B256LA_256-Kbit_(32_K_8)_nvSRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd9bf63054
CY14B256LA-ZS25XI
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1375.02 грн
10+1174.94 грн
25+1120.31 грн
40+1026.00 грн
135+963.07 грн
270+928.90 грн
В кошику  од. на суму  грн.
CY62126EV30LL-45ZSXA CY62126EV30_RevH.pdf
CY62126EV30LL-45ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 1335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+324.70 грн
10+277.82 грн
25+264.85 грн
40+242.57 грн
135+227.72 грн
270+222.02 грн
В кошику  од. на суму  грн.
CY62167EV18LL-55BVI Infineon-CY62167EV18_MoBL_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe53a531d2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167EV18LL-55BVI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1245KV18-400BZC download
CY7C1245KV18-400BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
товару немає в наявності
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CY7C1250KV18-450BZXC CY7C1246%2C48%2C50%2C57KV18.pdf
CY7C1250KV18-450BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1268KV18-450BZXC CY7C12%2868%2C70%29KV18.pdf
CY7C1268KV18-450BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1312KV18-250BZC download
CY7C1312KV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1413KV18-250BZC Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1413KV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1414KV18-250BZXC download
CY7C1414KV18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1415KV18-250BZC Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1415KV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1415KV18-250BZXC Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1415KV18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1415KV18-333BZC Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1415KV18-333BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1418KV18-250BZC Infineon-CY7C1418KV18_CY7C1420KV18_36-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1b25e368a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1418KV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1425KV18-250BZC download
CY7C1425KV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 9
DigiKey Programmable: Not Verified
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3867.05 грн
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CY7C1911KV18-333BZC download
CY7C1911KV18-333BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 9
DigiKey Programmable: Not Verified
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CY7C2163KV18-550BZXI Infineon-CY7C2163KV18_CY7C2165KV18_18_MBIT_QDR_II+_SRAM_FOUR_WORD_BURST_ARCHITECTURE_(2.5_CYCLE_READ_LATENCY)_WITH_ODT-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde2e830e1&utm_source=cypress&utm_medium=referral&utm
CY7C2163KV18-550BZXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C2165KV18-550BZC Infineon-CY7C2163KV18_CY7C2165KV18_18_MBIT_QDR_II+_SRAM_FOUR_WORD_BURST_ARCHITECTURE_(2.5_CYCLE_READ_LATENCY)_WITH_ODT-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde2e830e1&utm_source=cypress&utm_medium=referral&utm
CY7C2165KV18-550BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C2168KV18-550BZC Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_
CY7C2168KV18-550BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C2170KV18-400BZXC Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_
CY7C2170KV18-400BZXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C2170KV18-550BZXC Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_
CY7C2170KV18-550BZXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C2268KV18-550BZC Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665
CY7C2268KV18-550BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C2270KV18-400BZXC Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665
CY7C2270KV18-400BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6578.98 грн
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CY8C21345-12PVXE download
CY8C21345-12PVXE
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Discontinued at Digi-Key
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C21512-24PVXA
CY8C21512-24PVXA
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Discontinued at Digi-Key
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C22345-12PVXE download
CY8C22345-12PVXE
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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IRLR6225TRPBF irlr6225pbf.pdf?fileId=5546d462533600a40153566d99bc26c1
IRLR6225TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 21A, 4.5V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+28.74 грн
4000+25.59 грн
Мінімальне замовлення: 2000
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IRLML6344TRPBF irlml6344pbf.pdf?fileId=5546d462533600a4015356689c44262c
IRLML6344TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 5A MICRO3/SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
на замовлення 6450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.76 грн
6000+5.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLML6346TRPBF irlml6346pbf.pdf?fileId=5546d462533600a401535668a336262e
IRLML6346TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 3.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 24 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 24
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IRFML8244TRPBF irfml8244pbf.pdf?fileId=5546d462533600a40153562817c91fc0
IRFML8244TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 10µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.20 грн
6000+5.75 грн
9000+5.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFHS9301TR2PBF irfhs9301pbf.pdf?fileId=5546d462533600a401535623a01c1f61
IRFHS9301TR2PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 6A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
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IRFHS8242TR2PBF irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d
IRFHS8242TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 9.9A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
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IRFHS9351TR2PBF irfhs9351pbf.pdf?fileId=5546d462533600a401535623a8d41f63
IRFHS9351TR2PBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 2.3A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Obsolete
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IRFHS8342TR2PBF irfhs8342pbf.pdf?fileId=5546d462533600a401535623992e1f5f
IRFHS8342TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.8A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PG-TSDSON-6
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFML8244TRPBF irfml8244pbf.pdf?fileId=5546d462533600a40153562817c91fc0
IRFML8244TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 10µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 11702 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.79 грн
18+17.89 грн
100+8.99 грн
500+8.30 грн
1000+7.39 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
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