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MMIX1F230N20T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Mounting: SMD
Pulsed drain current: 630A
Power dissipation: 600W
Gate charge: 358nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; Trench™
Drain current: 156A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SMPD
On-state resistance: 8.3mΩ
Reverse recovery time: 200ns
товару немає в наявності
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VUB135-22NO1 IXYS media?resourcetype=datasheets&itemid=633EF3F8-FCB9-440E-BF5F-9F1D8A39DFA4&filename=Littelfuse-Power-Semiconductors-VUB135-22NO1-Datasheet Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A
Type of semiconductor module: IGBT
Power dissipation: 445W
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 80A
Topology: buck chopper; NTC thermistor; three-phase diode bridge
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IXTA44P15T-TRL IXTA44P15T-TRL IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 298W
Case: D2PAK
Gate-source voltage: 15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
LCA125 LCA125 IXYS LCA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
1+481.27 грн
10+351.55 грн
В кошику  од. на суму  грн.
LAA125S LAA125S IXYS LAA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
1+519.67 грн
50+403.78 грн
В кошику  од. на суму  грн.
LCA125S LCA125S IXYS LCA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+683.96 грн
50+416.22 грн
100+334.96 грн
В кошику  од. на суму  грн.
LAA125LS LAA125LS IXYS LAA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
1+685.75 грн
10+509.91 грн
В кошику  од. на суму  грн.
LCA125L LCA125L IXYS LCA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
1+694.67 грн
50+422.85 грн
В кошику  од. на суму  грн.
LAA125P LAA125P IXYS LAA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+543.77 грн
100+404.61 грн
В кошику  од. на суму  грн.
LAA125PL LAA125PL IXYS LAA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+942.90 грн
50+573.75 грн
100+459.33 грн
В кошику  од. на суму  грн.
LCA125LS LCA125LS IXYS LCA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+694.67 грн
50+422.85 грн
100+339.94 грн
В кошику  од. на суму  грн.
DSP25-12AT-TRL IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Max. off-state voltage: 1.2kV
Load current: 25A
Type of diode: rectifying
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
DSEI25-06AS-TRL DSEI25-06AS-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 25A; 50ns; D2PAK,TO263AB; FRED
Mounting: SMD
Case: D2PAK; TO263AB
Kind of package: reel; tape
Technology: FRED
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFP26N30X3 IXFP26N30X3 IXYS IXF_26N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: THT
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
на замовлення 208 шт:
термін постачання 14-30 дні (днів)
2+237.51 грн
25+169.97 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP26N50P3 IXFP26N50P3 IXYS IXFH26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Power dissipation: 500W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
на замовлення 258 шт:
термін постачання 14-30 дні (днів)
1+589.31 грн
50+441.92 грн
В кошику  од. на суму  грн.
IXTP08N120P IXTP08N120P IXYS IXT_08N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Mounting: THT
Case: TO220AB
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
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IXTA08N120P IXTA08N120P IXYS IXT_08N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Technology: Polar™
Drain current: 0.8A
Kind of channel: enhancement
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IXGT16N170A IXGT16N170A IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXGT16N170AH1 IXGT16N170AH1 IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXTQ140N10P IXTQ140N10P IXYS IXTQ140N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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IXTT140N10P IXTT140N10P IXYS IXTQ140N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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LDA100STR LDA100STR IXYS LDA100.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Number of channels: 1
Mounting: SMD
Trigger current: 50mA
Collector-emitter voltage: 30V
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
8+61.61 грн
10+48.34 грн
100+41.87 грн
400+37.97 грн
500+37.39 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IXTA200N055T2 IXTA200N055T2 IXYS IXTA(P)200N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Mounting: SMD
Power dissipation: 360W
Gate charge: 109nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 4.2mΩ
Reverse recovery time: 49ns
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IXTA64N10L2 IXTA64N10L2 IXYS IXTA(H,P)64N10L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
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LAA127S LAA127S IXYS LAA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
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LAA127STR IXYS LAA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LBA127STR IXYS LBA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LBB127S LBB127S IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
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LBB127STR IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LCA127STR IXYS LCA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LCB127STR IXYS LCB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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PAA127STR IXYS PAA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switched voltage: max. 280V AC; max. 280V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXGH25N160 IXGH25N160 IXYS IXGH(T)25N160.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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MMIX2F60N50P3MMIX2F60N50P3
MMIX2F60N50P3MMIX2F60N50P3
 MMIX2F60N50P3 IXYS 238_MMIX2F60N50P3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+2971.56 грн
3+2434.29 грн
10+2188.88 грн
20+2042.95 грн
В кошику  од. на суму  грн.
IXTN60N50L2 IXTN60N50L2 IXYS IXTN60N50L2.pdf Category: Transistor drivers
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXTK60N50L2 IXTK60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
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IXFQ60N50P3 IXFQ60N50P3 IXYS IXF_60N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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IXTX60N50L2 IXTX60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
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IXGH16N170 IXGH16N170 IXYS IXGH16N170-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 78nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 80A
Type of transistor: IGBT
Turn-on time: 90ns
Kind of package: tube
Case: TO247-3
Turn-off time: 1.6µs
Gate-emitter voltage: ±20V
Collector current: 16A
на замовлення 218 шт:
термін постачання 14-30 дні (днів)
1+917.01 грн
5+749.52 грн
10+690.66 грн
30+596.97 грн
60+593.65 грн
В кошику  од. на суму  грн.
IXFP16N50P3 IXFP16N50P3 IXYS IXF_16N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 199 шт:
термін постачання 14-30 дні (днів)
2+320.55 грн
10+253.71 грн
50+223.86 грн
100+211.43 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP16N50P IXFP16N50P IXYS IXF_16N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 284 шт:
термін постачання 14-30 дні (днів)
2+306.26 грн
10+261.17 грн
50+209.77 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP16N50P IXTP16N50P IXYS IXTP16N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
2+318.76 грн
10+186.55 грн
50+179.92 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA16N50P3 IXFA16N50P3 IXYS IXF_16N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
3+179.92 грн
10+158.36 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXTH16N50D2 IXTH16N50D2 IXYS IXTH(T)16N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXFH16N50P IXFH16N50P IXYS IXF_16N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
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IXFH16N50P3 IXFH16N50P3 IXYS IXF_16N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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IXTQ16N50P IXTQ16N50P IXYS IXTP16N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
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IXTT16N50D2 IXTT16N50D2 IXYS IXTH(T)16N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXFA16N50P IXFA16N50P IXYS IXF_16N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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IXTA16N50P IXTA16N50P IXYS IXTP16N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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PAA140L PAA140L IXYS PAA140L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
1+978.62 грн
50+763.62 грн
В кошику  од. на суму  грн.
PAA140 PAA140 IXYS PAA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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PAA140S PAA140S IXYS PAA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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PAA140LS PAA140LS IXYS PAA140L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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PAA140LSTR IXYS PAA140L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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PAA140STR IXYS PAA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXD2012NTR IXYS ixd2012n-data-sheet?assetguid=c97f5428-6f19-4399-b112-7bd50275dd2b Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; 2.3A; Ch: 2; MOSFET; 10÷20V
Mounting: SMD
Case: SOIC8
Maximum output current: 2.3A
Output current: 2.3A
Type of integrated circuit: driver
Power dissipation: 0.625W
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 20ns
Kind of integrated circuit: half-bridge
Number of channels: 2
Impulse rise time: 30ns
Topology: H-bridge
Supply voltage: 10...20V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IXTP26P10T IXTP26P10T IXYS IXT_26P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
2+223.22 грн
Мінімальне замовлення: 2 шт
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IXTY26P10T-TRL IXTY26P10T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
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 Мінімальне замовлення: 2500 шт
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IXTY26P10T IXTY26P10T IXYS IXT_26P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
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MMIX1F230N20T littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Mounting: SMD
Pulsed drain current: 630A
Power dissipation: 600W
Gate charge: 358nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; Trench™
Drain current: 156A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SMPD
On-state resistance: 8.3mΩ
Reverse recovery time: 200ns
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VUB135-22NO1 media?resourcetype=datasheets&itemid=633EF3F8-FCB9-440E-BF5F-9F1D8A39DFA4&filename=Littelfuse-Power-Semiconductors-VUB135-22NO1-Datasheet
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A
Type of semiconductor module: IGBT
Power dissipation: 445W
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 80A
Topology: buck chopper; NTC thermistor; three-phase diode bridge
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IXTA44P15T-TRL littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTA44P15T-TRL
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 298W
Case: D2PAK
Gate-source voltage: 15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
LCA125 LCA125.pdf
LCA125
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+481.27 грн
10+351.55 грн
В кошику  од. на суму  грн.
LAA125S LAA125.pdf
LAA125S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+519.67 грн
50+403.78 грн
В кошику  од. на суму  грн.
LCA125S LCA125.pdf
LCA125S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+683.96 грн
50+416.22 грн
100+334.96 грн
В кошику  од. на суму  грн.
LAA125LS LAA125L.pdf
LAA125LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+685.75 грн
10+509.91 грн
В кошику  од. на суму  грн.
LCA125L LCA125L.pdf
LCA125L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+694.67 грн
50+422.85 грн
В кошику  од. на суму  грн.
LAA125P LAA125.pdf
LAA125P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+543.77 грн
100+404.61 грн
В кошику  од. на суму  грн.
LAA125PL LAA125L.pdf
LAA125PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+942.90 грн
50+573.75 грн
100+459.33 грн
В кошику  од. на суму  грн.
LCA125LS LCA125L.pdf
LCA125LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+694.67 грн
50+422.85 грн
100+339.94 грн
В кошику  од. на суму  грн.
DSP25-12AT-TRL media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Max. off-state voltage: 1.2kV
Load current: 25A
Type of diode: rectifying
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
DSEI25-06AS-TRL
DSEI25-06AS-TRL
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 25A; 50ns; D2PAK,TO263AB; FRED
Mounting: SMD
Case: D2PAK; TO263AB
Kind of package: reel; tape
Technology: FRED
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFP26N30X3 IXF_26N30X3.pdf 300VProductBrief.pdf
IXFP26N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: THT
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
на замовлення 208 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+237.51 грн
25+169.97 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP26N50P3 IXFH26N50P3.pdf
IXFP26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Power dissipation: 500W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
на замовлення 258 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+589.31 грн
50+441.92 грн
В кошику  од. на суму  грн.
IXTP08N120P IXT_08N120P.pdf
IXTP08N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Mounting: THT
Case: TO220AB
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTA08N120P IXT_08N120P.pdf
IXTA08N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Technology: Polar™
Drain current: 0.8A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXGT16N170A IXGH(t)16N170A_H1.pdf
IXGT16N170A
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXGT16N170AH1 IXGH(t)16N170A_H1.pdf
IXGT16N170AH1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ140N10P IXTQ140N10P-DTE.pdf
IXTQ140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTT140N10P IXTQ140N10P-DTE.pdf
IXTT140N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
LDA100STR LDA100.pdf
LDA100STR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Number of channels: 1
Mounting: SMD
Trigger current: 50mA
Collector-emitter voltage: 30V
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+61.61 грн
10+48.34 грн
100+41.87 грн
400+37.97 грн
500+37.39 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IXTA200N055T2 IXTA(P)200N055T2.pdf
IXTA200N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Mounting: SMD
Power dissipation: 360W
Gate charge: 109nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 4.2mΩ
Reverse recovery time: 49ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA64N10L2 IXTA(H,P)64N10L2.pdf
IXTA64N10L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
товару немає в наявності
В кошику  од. на суму  грн.
LAA127S LAA127.pdf
LAA127S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LAA127STR LAA127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBA127STR LBA127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBB127S LBB127.pdf
LBB127S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LBB127STR LBB127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA127STR LCA127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCB127STR LCB127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
PAA127STR PAA127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switched voltage: max. 280V AC; max. 280V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXGH25N160 IXGH(T)25N160.pdf
IXGH25N160
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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MMIX2F60N50P3 238_MMIX2F60N50P3.pdf
MMIX2F60N50P3MMIX2F60N50P3
MMIX2F60N50P3MMIX2F60N50P3
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2971.56 грн
3+2434.29 грн
10+2188.88 грн
20+2042.95 грн
В кошику  од. на суму  грн.
IXTN60N50L2 IXTN60N50L2.pdf
IXTN60N50L2
Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXTK60N50L2 IXTK(X)60N50L2.pdf
IXTK60N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
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IXFQ60N50P3 IXF_60N50P3.pdf
IXFQ60N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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IXTX60N50L2 IXTK(X)60N50L2.pdf
IXTX60N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
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IXGH16N170 IXGH16N170-DTE.pdf
IXGH16N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 78nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 80A
Type of transistor: IGBT
Turn-on time: 90ns
Kind of package: tube
Case: TO247-3
Turn-off time: 1.6µs
Gate-emitter voltage: ±20V
Collector current: 16A
на замовлення 218 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+917.01 грн
5+749.52 грн
10+690.66 грн
30+596.97 грн
60+593.65 грн
В кошику  од. на суму  грн.
IXFP16N50P3 IXF_16N50P3.pdf
IXFP16N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 199 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+320.55 грн
10+253.71 грн
50+223.86 грн
100+211.43 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP16N50P IXF_16N50P.pdf
IXFP16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 284 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+306.26 грн
10+261.17 грн
50+209.77 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP16N50P IXTP16N50P-DTE.pdf
IXTP16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+318.76 грн
10+186.55 грн
50+179.92 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA16N50P3 IXF_16N50P3.pdf
IXFA16N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+179.92 грн
10+158.36 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXTH16N50D2 IXTH(T)16N50D2.pdf
IXTH16N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXFH16N50P IXF_16N50P.pdf
IXFH16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
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В кошику  од. на суму  грн.
IXFH16N50P3 IXF_16N50P3.pdf
IXFH16N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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IXTQ16N50P IXTP16N50P-DTE.pdf
IXTQ16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
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IXTT16N50D2 IXTH(T)16N50D2.pdf
IXTT16N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXFA16N50P IXF_16N50P.pdf
IXFA16N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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IXTA16N50P IXTP16N50P-DTE.pdf
IXTA16N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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PAA140L PAA140L.pdf
PAA140L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+978.62 грн
50+763.62 грн
В кошику  од. на суму  грн.
PAA140 PAA140.pdf
PAA140
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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PAA140S PAA140.pdf
PAA140S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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PAA140LS PAA140L.pdf
PAA140LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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PAA140LSTR PAA140L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
PAA140STR PAA140.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXD2012NTR ixd2012n-data-sheet?assetguid=c97f5428-6f19-4399-b112-7bd50275dd2b
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; 2.3A; Ch: 2; MOSFET; 10÷20V
Mounting: SMD
Case: SOIC8
Maximum output current: 2.3A
Output current: 2.3A
Type of integrated circuit: driver
Power dissipation: 0.625W
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 20ns
Kind of integrated circuit: half-bridge
Number of channels: 2
Impulse rise time: 30ns
Topology: H-bridge
Supply voltage: 10...20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXTP26P10T IXT_26P10T.pdf
IXTP26P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+223.22 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTY26P10T-TRL
IXTY26P10T-TRL
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXTY26P10T IXT_26P10T.pdf
IXTY26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
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