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IXFR24N80P IXFR24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2857DA3FF1A1820&compId=IXFR24N80P.pdf?ci_sign=873856e0e863a27e19dde25c672bc74899b0f721 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+890.20 грн
3+741.33 грн
В кошику  од. на суму  грн.
IXFX34N80 IXFX34N80 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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IXFX44N80P IXFX44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
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CPC1972G CPC1972G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
3+147.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFP44N25X3 IXFP44N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: THT
Power dissipation: 240W
Pulsed drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: HiPerFET™; X3-Class
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 33nC
Reverse recovery time: 87ns
On-state resistance: 40mΩ
Drain current: 44A
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IXTT64N25P IXTT64N25P IXYS IXTQ64N25P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO268
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
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CPC1394GR CPC1394GR IXYS CPC1394.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.57x6.35x3.3mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 5ms
Control current max.: 50mA
Kind of output: MOSFET
Max. operating current: 90mA
On-state resistance: 40Ω
Case: DIP4
Insulation voltage: 5kV
на замовлення 533 шт:
термін постачання 21-30 дні (днів)
2+237.56 грн
100+144.33 грн
500+116.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK78N50P3 IXFK78N50P3 IXYS IXFK(X)78N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+1661.19 грн
10+1276.01 грн
В кошику  од. на суму  грн.
IXFK98N50P3 IXFK98N50P3 IXYS IXFK(X)98N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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IXFX78N50P3 IXFX78N50P3 IXYS IXFK(X)78N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
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IXFX98N50P3 IXFX98N50P3 IXYS IXFK(X)98N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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DSB15IM45IB DSB15IM45IB IXYS DSB15IM45IB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.55V; 70W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: TO262
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
на замовлення 494 шт:
термін постачання 21-30 дні (днів)
18+25.61 грн
19+22.14 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
IXFN210N30P3 IXFN210N30P3 IXYS IXFN210N30P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 268nC
Reverse recovery time: 250ns
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+3164.29 грн
В кошику  од. на суму  грн.
MCMA35PD1600TB MCMA35PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8104FC036B00C4&compId=MCMA35PD1600TB.pdf?ci_sign=55ae504df2d82c6c04ccd8c02f974e8b0f361824 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Max. off-state voltage: 1.6kV
Load current: 35A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.22V
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. load current: 55A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+1589.65 грн
В кошику  од. на суму  грн.
MCD132-08io1 IXYS MCD132-08io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 800V; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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IXFX27N80Q IXFX27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1693.86 грн
3+1414.60 грн
10+1320.29 грн
В кошику  од. на суму  грн.
IXYA50N65C3 IXYA50N65C3 IXYS IXY_50N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXYH50N65C3 IXYH50N65C3 IXYS IXY_50N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXYH50N65C3D1 IXYH50N65C3D1 IXYS IXYH50N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXYP50N65C3 IXYP50N65C3 IXYS IXY_50N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXTX120P20T IXTX120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1999.43 грн
3+1640.12 грн
10+1559.75 грн
В кошику  од. на суму  грн.
IXGX320N60B3 IXGX320N60B3 IXYS IXGK(x)320N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2018.86 грн
В кошику  од. на суму  грн.
IXFA34N65X2 IXFA34N65X2 IXYS IXFA34N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
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IXFH34N65X2 IXFH34N65X2 IXYS IXF_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
на замовлення 187 шт:
термін постачання 21-30 дні (днів)
1+539.60 грн
10+414.95 грн
30+387.89 грн
120+354.27 грн
В кошику  од. на суму  грн.
IXFP34N65X3 IXFP34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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IXTA34N65X2 IXTA34N65X2 IXYS IXTA34N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTH34N65X2 IXTH34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTP24N65X2 IXTP24N65X2 IXYS IXT_24N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
1+501.62 грн
В кошику  од. на суму  грн.
IXTN90P20P IXTN90P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7979492C3F64C2748&compId=IXTN90P20P.pdf?ci_sign=a8e50718a247f46e2906074292bba4b1736a5cc4 Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Case: SOT227B
Polarisation: unipolar
Pulsed drain current: -270A
Drain-source voltage: -200V
Drain current: -90A
Electrical mounting: screw
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Semiconductor structure: single transistor
Technology: PolarP™
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Kind of channel: enhancement
Mechanical mounting: screw
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IXTP90N055T2 IXTP90N055T2 IXYS IXTA(I,P,Y)90N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Reverse recovery time: 37ns
Gate charge: 42nC
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 292 шт:
термін постачання 21-30 дні (днів)
2+224.32 грн
10+146.79 грн
50+120.55 грн
100+109.89 грн
Мінімальне замовлення: 2
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IXTR90P20P IXTR90P20P IXYS IXTR90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -53A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: ISOPLUS247™
Type of transistor: P-MOSFET
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+639.39 грн
В кошику  од. на суму  грн.
IXFN26N100P IXFN26N100P IXYS IXFN26N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 197nC
Reverse recovery time: 300ns
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+4701.83 грн
3+3853.45 грн
В кошику  од. на суму  грн.
MCD72-12IO1B MCD72-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9B22E1AFE0C4&compId=MCD72-12io1B.pdf?ci_sign=78615c6c39c9ae2e9df718e0a197cb0e2079bdab pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 85A
Max. forward impulse current: 1.7kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.34V
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. load current: 133A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+2726.25 грн
3+2236.30 грн
10+2028.00 грн
В кошику  од. на суму  грн.
IXGK120N120A3 IXGK120N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE298DEDCD820&compId=IXGK(x)120N120A3.pdf?ci_sign=c7a8186a489035ec0ead3df55bd4f31bb6ed73dd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
товару немає в наявності
В кошику  од. на суму  грн.
IXGK120N120B3 IXGK120N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE7EA92E47820&compId=IXGK(x)120N120B3.pdf?ci_sign=66d03d7a35e3abfe1e2dfa50266727cc891d888d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 122ns
Turn-off time: 885ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
товару немає в наявності
В кошику  од. на суму  грн.
IXYK120N120C3 IXYK120N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 346ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
1+2734.20 грн
3+2287.96 грн
10+2007.50 грн
25+1815.61 грн
В кошику  од. на суму  грн.
IXYX120N120B3 IXYX120N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADFBCCF8BE3820&compId=IXYX120N120B3.pdf?ci_sign=29d193d35ac59a9ca5d54f9ed1b3d837837fd1b1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 826ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+2486.92 грн
3+2079.67 грн
10+1836.93 грн
В кошику  од. на суму  грн.
IXYX120N120C3 IXYX120N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 346ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+2885.22 грн
3+2413.43 грн
10+2132.97 грн
В кошику  од. на суму  грн.
MMIX1G120N120A3V1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE059161B39820&compId=MMIX1G120N120A3V1.pdf?ci_sign=ca00727da0a846fcc14b17f244a4389dd779232d Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Power dissipation: 400W
Case: SMPD
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Collector current: 105A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
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IX4340UE IX4340UE IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 1775 шт:
термін постачання 21-30 дні (днів)
4+123.64 грн
10+68.88 грн
25+58.55 грн
80+48.38 грн
240+41.00 грн
560+40.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTA26P20P IXTA26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
на замовлення 348 шт:
термін постачання 21-30 дні (днів)
1+498.97 грн
5+383.79 грн
50+328.84 грн
В кошику  од. на суму  грн.
IXTH26P20P IXTH26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXTH48P20P IXTH48P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
1+762.15 грн
5+599.46 грн
10+543.70 грн
В кошику  од. на суму  грн.
IXTP26P20P IXTP26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ26P20P IXTQ26P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
1+513.10 грн
10+364.11 грн
30+311.62 грн
В кошику  од. на суму  грн.
IXTR48P20P IXTR48P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00147810378BF&compId=IXTR48P20P.pdf?ci_sign=6ecb22dd6fd6b0673f62f8c7c5cf3402e6ec1242 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -30A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 93mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 190W
Kind of channel: enhancement
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
1+625.26 грн
3+516.64 грн
10+464.97 грн
30+433.81 грн
В кошику  од. на суму  грн.
IXTT48P20P IXTT48P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
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В кошику  од. на суму  грн.
CPC1709J CPC1709J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F12A0C7&compId=CPC1709.pdf?ci_sign=2ef663d2c760ef1dfecea61215b25cd407320d1c Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 11A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 50mΩ
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
1+554.61 грн
10+454.31 грн
25+427.25 грн
В кошику  од. на суму  грн.
CPC1030N CPC1030N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
4+143.07 грн
10+113.17 грн
100+100.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXYH40N65B3D1 IXYH40N65B3D1 IXYS IXYH(Q)40N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3D1 IXYH40N65C3D1 IXYS IXYH(Q)40N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
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IXYH40N65C3H1 IXYH40N65C3H1 IXYS IXYH40N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
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IXXH140N65B4 IXXH140N65B4 IXYS IXXH140N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
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IXXH140N65C4 IXXH140N65C4 IXYS IXXH140N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
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IXFT15N100Q3 IXFT15N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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IXTA05N100HV IXTA05N100HV IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 40W
Case: TO263HV
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
On-state resistance: 17Ω
Drain current: 0.75A
Drain-source voltage: 1kV
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
2+252.58 грн
3+217.32 грн
10+191.89 грн
50+184.51 грн
Мінімальне замовлення: 2
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IXFN220N20X3 IXFN220N20X3 IXYS IXFN220N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 204nC
Reverse recovery time: 128ns
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2658.25 грн
В кошику  од. на суму  грн.
IXTX8N150L IXTX8N150L IXYS IXTK(X)8N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Case: PLUS247™
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 8A
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2743.91 грн
В кошику  од. на суму  грн.
IXTP2N65X2 IXTP2N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
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IXTP24N65X2M IXTP24N65X2M IXYS IXTP24N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
2+314.40 грн
10+195.99 грн
50+189.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFR24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2857DA3FF1A1820&compId=IXFR24N80P.pdf?ci_sign=873856e0e863a27e19dde25c672bc74899b0f721
IXFR24N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+890.20 грн
3+741.33 грн
В кошику  од. на суму  грн.
IXFX34N80 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0
IXFX34N80
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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IXFX44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d
IXFX44N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
CPC1972G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77
CPC1972G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+147.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFP44N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf
IXFP44N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: THT
Power dissipation: 240W
Pulsed drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: HiPerFET™; X3-Class
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 33nC
Reverse recovery time: 87ns
On-state resistance: 40mΩ
Drain current: 44A
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IXTT64N25P IXTQ64N25P-DTE.pdf
IXTT64N25P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO268
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
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CPC1394GR CPC1394.pdf
CPC1394GR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.57x6.35x3.3mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 5ms
Control current max.: 50mA
Kind of output: MOSFET
Max. operating current: 90mA
On-state resistance: 40Ω
Case: DIP4
Insulation voltage: 5kV
на замовлення 533 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+237.56 грн
100+144.33 грн
500+116.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK78N50P3 IXFK(X)78N50P3.pdf
IXFK78N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1661.19 грн
10+1276.01 грн
В кошику  од. на суму  грн.
IXFK98N50P3 IXFK(X)98N50P3.pdf
IXFK98N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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IXFX78N50P3 IXFK(X)78N50P3.pdf
IXFX78N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFX98N50P3 IXFK(X)98N50P3.pdf
IXFX98N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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DSB15IM45IB DSB15IM45IB.pdf
DSB15IM45IB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.55V; 70W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: TO262
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
на замовлення 494 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.61 грн
19+22.14 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
IXFN210N30P3 IXFN210N30P3.pdf
IXFN210N30P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 268nC
Reverse recovery time: 250ns
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3164.29 грн
В кошику  од. на суму  грн.
MCMA35PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8104FC036B00C4&compId=MCMA35PD1600TB.pdf?ci_sign=55ae504df2d82c6c04ccd8c02f974e8b0f361824 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA35PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Max. off-state voltage: 1.6kV
Load current: 35A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.22V
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. load current: 55A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1589.65 грн
В кошику  од. на суму  грн.
MCD132-08io1 MCD132-08io1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 800V; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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IXFX27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFX27N80Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1693.86 грн
3+1414.60 грн
10+1320.29 грн
В кошику  од. на суму  грн.
IXYA50N65C3 IXY_50N65C3.pdf
IXYA50N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXYH50N65C3 IXY_50N65C3.pdf
IXYH50N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXYH50N65C3D1 IXYH50N65C3D1.pdf
IXYH50N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXYP50N65C3 IXY_50N65C3.pdf
IXYP50N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXTX120P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25
IXTX120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1999.43 грн
3+1640.12 грн
10+1559.75 грн
В кошику  од. на суму  грн.
IXGX320N60B3 IXGK(x)320N60B3.pdf
IXGX320N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2018.86 грн
В кошику  од. на суму  грн.
IXFA34N65X2 IXFA34N65X2.pdf
IXFA34N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
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IXFH34N65X2 IXF_34N65X2.pdf
IXFH34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
на замовлення 187 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+539.60 грн
10+414.95 грн
30+387.89 грн
120+354.27 грн
В кошику  од. на суму  грн.
IXFP34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b
IXFP34N65X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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IXTA34N65X2 IXTA34N65X2.pdf
IXTA34N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTH34N65X2 IXT_34N65X2.pdf
IXTH34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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В кошику  од. на суму  грн.
IXTP24N65X2 IXT_24N65X2.pdf
IXTP24N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+501.62 грн
В кошику  од. на суму  грн.
IXTN90P20P pVersion=0046&contRep=ZT&docId=005056AB752F1EE7979492C3F64C2748&compId=IXTN90P20P.pdf?ci_sign=a8e50718a247f46e2906074292bba4b1736a5cc4
IXTN90P20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Case: SOT227B
Polarisation: unipolar
Pulsed drain current: -270A
Drain-source voltage: -200V
Drain current: -90A
Electrical mounting: screw
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Semiconductor structure: single transistor
Technology: PolarP™
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Kind of channel: enhancement
Mechanical mounting: screw
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В кошику  од. на суму  грн.
IXTP90N055T2 IXTA(I,P,Y)90N055T2.pdf
IXTP90N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Reverse recovery time: 37ns
Gate charge: 42nC
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 292 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+224.32 грн
10+146.79 грн
50+120.55 грн
100+109.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTR90P20P IXTR90P20P.pdf
IXTR90P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -53A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: ISOPLUS247™
Type of transistor: P-MOSFET
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+639.39 грн
В кошику  од. на суму  грн.
IXFN26N100P IXFN26N100P.pdf
IXFN26N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 197nC
Reverse recovery time: 300ns
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4701.83 грн
3+3853.45 грн
В кошику  од. на суму  грн.
MCD72-12IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF9B22E1AFE0C4&compId=MCD72-12io1B.pdf?ci_sign=78615c6c39c9ae2e9df718e0a197cb0e2079bdab pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD72-12IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 85A
Max. forward impulse current: 1.7kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.34V
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. load current: 133A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2726.25 грн
3+2236.30 грн
10+2028.00 грн
В кошику  од. на суму  грн.
IXGK120N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE298DEDCD820&compId=IXGK(x)120N120A3.pdf?ci_sign=c7a8186a489035ec0ead3df55bd4f31bb6ed73dd
IXGK120N120A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
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В кошику  од. на суму  грн.
IXGK120N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE7EA92E47820&compId=IXGK(x)120N120B3.pdf?ci_sign=66d03d7a35e3abfe1e2dfa50266727cc891d888d
IXGK120N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 122ns
Turn-off time: 885ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
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IXYK120N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0
IXYK120N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 346ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2734.20 грн
3+2287.96 грн
10+2007.50 грн
25+1815.61 грн
В кошику  од. на суму  грн.
IXYX120N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADFBCCF8BE3820&compId=IXYX120N120B3.pdf?ci_sign=29d193d35ac59a9ca5d54f9ed1b3d837837fd1b1
IXYX120N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 826ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2486.92 грн
3+2079.67 грн
10+1836.93 грн
В кошику  од. на суму  грн.
IXYX120N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADF8429ADAB820&compId=IXYK(x)120N120C3.pdf?ci_sign=2816af6dfd2bdc776f9cb1060346c96b4d57c1e0
IXYX120N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 346ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2885.22 грн
3+2413.43 грн
10+2132.97 грн
В кошику  од. на суму  грн.
MMIX1G120N120A3V1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE059161B39820&compId=MMIX1G120N120A3V1.pdf?ci_sign=ca00727da0a846fcc14b17f244a4389dd779232d
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Power dissipation: 400W
Case: SMPD
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 105ns
Turn-off time: 1365ns
Collector current: 105A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
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В кошику  од. на суму  грн.
IX4340UE IX4340.pdf
IX4340UE
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 1775 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+123.64 грн
10+68.88 грн
25+58.55 грн
80+48.38 грн
240+41.00 грн
560+40.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTA26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTA26P20P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
на замовлення 348 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+498.97 грн
5+383.79 грн
50+328.84 грн
В кошику  од. на суму  грн.
IXTH26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTH26P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTH48P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e
IXTH48P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+762.15 грн
5+599.46 грн
10+543.70 грн
В кошику  од. на суму  грн.
IXTP26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTP26P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ26P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87
IXTQ26P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+513.10 грн
10+364.11 грн
30+311.62 грн
В кошику  од. на суму  грн.
IXTR48P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00147810378BF&compId=IXTR48P20P.pdf?ci_sign=6ecb22dd6fd6b0673f62f8c7c5cf3402e6ec1242
IXTR48P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -30A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 93mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 190W
Kind of channel: enhancement
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+625.26 грн
3+516.64 грн
10+464.97 грн
30+433.81 грн
В кошику  од. на суму  грн.
IXTT48P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EE75E673818BF&compId=IXT_48P20P.pdf?ci_sign=fc96b5e643c79bc0d735ec6275c107be6971544e
IXTT48P20P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -48A
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
CPC1709J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F12A0C7&compId=CPC1709.pdf?ci_sign=2ef663d2c760ef1dfecea61215b25cd407320d1c
CPC1709J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 11A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 50mΩ
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+554.61 грн
10+454.31 грн
25+427.25 грн
В кошику  од. на суму  грн.
CPC1030N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d
CPC1030N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+143.07 грн
10+113.17 грн
100+100.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXYH40N65B3D1 IXYH(Q)40N65B3D1.pdf
IXYH40N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
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IXYH40N65C3D1 IXYH(Q)40N65C3D1.pdf
IXYH40N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3H1 IXYH40N65C3H1.pdf
IXYH40N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXH140N65B4 IXXH140N65B4.pdf
IXXH140N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
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IXXH140N65C4 IXXH140N65C4.pdf
IXXH140N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
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IXFT15N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2
IXFT15N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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IXTA05N100HV IXTA(P)05N100_HV.pdf
IXTA05N100HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 40W
Case: TO263HV
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
On-state resistance: 17Ω
Drain current: 0.75A
Drain-source voltage: 1kV
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+252.58 грн
3+217.32 грн
10+191.89 грн
50+184.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN220N20X3 IXFN220N20X3.pdf 200VProductBrief.pdf
IXFN220N20X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 204nC
Reverse recovery time: 128ns
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2658.25 грн
В кошику  од. на суму  грн.
IXTX8N150L IXTK(X)8N150L.pdf
IXTX8N150L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Case: PLUS247™
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 8A
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2743.91 грн
В кошику  од. на суму  грн.
IXTP2N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060
IXTP2N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXTP24N65X2M IXTP24N65X2M.pdf
IXTP24N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+314.40 грн
10+195.99 грн
50+189.43 грн
Мінімальне замовлення: 2
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