| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NJVMJD45H11T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMFS024N06CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFD024N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 85A Power dissipation: 14W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFS024N06CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFS024N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 112A Power dissipation: 14W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74AC573DWG | ONSEMI |
Category: LatchesDescription: IC: digital; latch transparent; Ch: 8; 2÷6VDC; SMD; SO20-W; AC; AC Type of integrated circuit: digital Kind of integrated circuit: latch transparent Case: SO20-W Number of channels: 8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...6V DC Manufacturer series: AC Family: AC Kind of output: 3-state |
на замовлення 384 шт: термін постачання 14-30 дні (днів) |
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| MMBT5401LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBT5401 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 50...240 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSD1692YS | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO Mounting: THT Type of transistor: NPN Power dissipation: 15W Collector current: 3A Collector-emitter voltage: 100V Current gain: 4000...12000 Kind of package: tube Polarisation: bipolar Case: TO126ISO Kind of transistor: Darlington |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4006FFG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 3000pcs. |
на замовлення 3614 шт: термін постачання 14-30 дні (днів) |
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MBRB20100CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.95V Max. forward impulse current: 150A Kind of package: reel; tape Max. load current: 20A |
на замовлення 333 шт: термін постачання 14-30 дні (днів) |
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MC14014BDG | ONSEMI |
Category: Shift registersDescription: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B Operating temperature: -55...125°C Mounting: SMD Case: SOIC16 Supply voltage: 3...18V DC Kind of integrated circuit: 8bit; shift register Type of integrated circuit: digital Kind of package: tube Technology: CMOS Number of channels: 1 Family: HEF4000B |
на замовлення 425 шт: термін постачання 14-30 дні (днів) |
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| 1N5356BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 1N53xxB Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 5W Zener voltage: 19V Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5401RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27 Type of diode: rectifying Case: DO27 Mounting: THT Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 1V Leakage current: 50µA Max. forward impulse current: 200A Kind of package: reel; tape |
на замовлення 230 шт: термін постачання 14-30 дні (днів) |
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1N5401G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Case: DO27 Mounting: THT Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 1V Leakage current: 50µA Max. forward impulse current: 200A Kind of package: bulk |
на замовлення 427 шт: термін постачання 14-30 дні (днів) |
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BC847BM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.26W Case: SOT723 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 7920 шт: термін постачання 14-30 дні (днів) |
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FCB070N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Mounting: SMD Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar On-state resistance: 70mΩ Gate-source voltage: ±30V Drain current: 44A Drain-source voltage: 650V Power dissipation: 312W |
на замовлення 437 шт: термін постачання 14-30 дні (днів) |
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| NTBL070N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Pulsed drain current: 110A Power dissipation: 312W Case: H-PSOF8L Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LM833DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 15MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 5...18V DC; 10...36V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 7V/μs Input offset voltage: 0.3mV Kind of package: reel; tape Integrated circuit features: low noise |
на замовлення 2551 шт: термін постачання 14-30 дні (днів) |
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MC14584BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Number of channels: hex; 6 Mounting: SMD Case: SO14 Kind of package: tube Number of inputs: 1 Supply voltage: 3...18V DC Operating temperature: -55...125°C Family: HEF4000B Kind of gate: NOT Kind of input: with Schmitt trigger Technology: CMOS Delay time: 100ns |
на замовлення 358 шт: термін постачання 14-30 дні (днів) |
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MC14584BDTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 100ns Number of inputs: 1 Supply voltage: 3...18V DC Kind of gate: NOT Technology: CMOS Number of channels: hex; 6 Family: HEF4000B |
на замовлення 2048 шт: термін постачання 14-30 дні (днів) |
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NC7SB3157P6X | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70-6; 10uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: SC70-6 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPDT Quiescent current: 10µA Number of channels: 1 |
на замовлення 7097 шт: термін постачання 14-30 дні (днів) |
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| FQB4N80TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Power dissipation: 130W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FQI4N80TU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBFJ175LT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA Kind of package: reel; tape Gate current: 50mA Power dissipation: 0.225W Gate-source voltage: 30V On-state resistance: 125Ω Drain current: 7mA Type of transistor: P-JFET Mounting: SMD Case: SOT23 Polarisation: unipolar |
на замовлення 437 шт: термін постачання 14-30 дні (днів) |
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| SMMBFJ175LT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23 Drain-source voltage: -25V Kind of package: reel; tape Power dissipation: 0.225W Kind of channel: enhancement On-state resistance: 125Ω Drain current: -60mA Type of transistor: P-JFET Mounting: SMD Case: SOT23 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NGTB40N120FL2WG | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3 Type of transistor: IGBT Power dissipation: 267W Case: TO247-3 Mounting: THT Gate charge: 313nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 200A |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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NGTB40N120FL3WG | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3 Type of transistor: IGBT Power dissipation: 227W Case: TO247-3 Mounting: THT Gate charge: 212nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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MC14043BDR2G | ONSEMI |
Category: LatchesDescription: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: RS latch Case: SOIC16 Mounting: SMD Operating temperature: -55...125°C Family: HEF4000B Technology: CMOS Kind of package: reel; tape Number of inputs: 2 Supply voltage: 3...18V DC Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MUR1640CTG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 100A Case: TO220AB Reverse recovery time: 60ns Heatsink thickness: 1.15...1.39mm Max. load current: 16A |
на замовлення 144 шт: термін постачання 14-30 дні (днів) |
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MC14093BDTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 100ns Family: HEF4000B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC541ADWG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
на замовлення 256 шт: термін постачання 14-30 дні (днів) |
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MM74HC541WMX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SOIC20; HC; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Family: HC Manufacturer series: HC |
на замовлення 927 шт: термін постачання 14-30 дні (днів) |
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MM74HC541WM | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 80µA Manufacturer series: HC |
на замовлення 99 шт: термін постачання 14-30 дні (днів) |
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MM74HC541MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 80µA Manufacturer series: HC |
на замовлення 104 шт: термін постачання 14-30 дні (днів) |
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MM74HC541MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC541ADTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC74HC541ADTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,octal,line receiver,line driver Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Family: HC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC74HC541ADWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,octal,line receiver,line driver Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Family: HC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N4750A-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 27V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4750ATR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 27V; reel,tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT24C08WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
на замовлення 1688 шт: термін постачання 14-30 дні (днів) |
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| NV24C08DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NV24C08MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAT24C08C4ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAT24C08C4CTR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| CAT24C08C5ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
|
CAT24C08TDI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSOT23-5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
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| CAT24C08YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| CAV24C08WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| CAV24C08YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| ULQ2003ADR2G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Case: SO16 Output current: 0.5A Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 30V Kind of integrated circuit: darlington; transistor array Number of channels: 7 Output voltage: 50V |
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В кошику од. на суму грн. | |||||||||||||||||
|
BAS70LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 0.41V Kind of package: reel; tape Power dissipation: 0.225W Max. forward impulse current: 0.1A |
на замовлення 5788 шт: термін постачання 14-30 дні (днів) |
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| FAN7393AMX | ONSEMI |
Category: Buffers, transceivers, driversDescription: Transistor: N-MOSFET; unipolar; SO14; 12÷20V Mounting: SMD Case: SO14 Operating temperature: -40...150°C Kind of package: reel; tape Supply voltage: 12...20V Output current: 2.5A Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
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В кошику од. на суму грн. | |||||||||||||||||
|
MC74HC393ADR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC Type of integrated circuit: digital Case: SO14 Family: HC Manufacturer series: HC Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Quiescent current: 160µA Number of channels: 2 Supply voltage: 2...6V DC Kind of integrated circuit: asynchronous counter Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC74HC393ADTR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC Type of integrated circuit: digital Case: TSSOP14 Family: HC Manufacturer series: HC Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Number of inputs: 2 Number of channels: 2 Supply voltage: 2...6V DC Kind of integrated circuit: 4-stage; binary ripple counter Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
NTJS4151PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 1W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 160 шт: термін постачання 14-30 дні (днів) |
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|
MC14490DWG | ONSEMI |
Category: Other logic integrated circuitsDescription: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16 Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 3...18V DC Technology: CMOS Kind of integrated circuit: contact bounce eliminator Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MC14490DWR2G | ONSEMI |
Category: Other logic integrated circuitsDescription: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC Kind of package: reel; tape Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 3...18V DC Technology: CMOS Kind of integrated circuit: contact bounce eliminator; hex Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MMBFJ177 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 1.5mA Power dissipation: 0.225W Case: SOT23 On-state resistance: 300Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Gate-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. |
| NJVMJD45H11T4G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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В кошику
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| NTMFS024N06CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFD024N06CT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS024N06CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS024N06CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC74AC573DWG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; 2÷6VDC; SMD; SO20-W; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Case: SO20-W
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Manufacturer series: AC
Family: AC
Kind of output: 3-state
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; 2÷6VDC; SMD; SO20-W; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Case: SO20-W
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Manufacturer series: AC
Family: AC
Kind of output: 3-state
на замовлення 384 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.26 грн |
| 10+ | 45.43 грн |
| 25+ | 39.67 грн |
| 38+ | 36.91 грн |
| 114+ | 31.32 грн |
| 190+ | 29.98 грн |
| 266+ | 29.31 грн |
| MMBT5401LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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| MMBT5401 |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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| KSD1692YS |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 15W
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 4000...12000
Kind of package: tube
Polarisation: bipolar
Case: TO126ISO
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 15W
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 4000...12000
Kind of package: tube
Polarisation: bipolar
Case: TO126ISO
Kind of transistor: Darlington
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| 1N4006FFG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 3000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 3000pcs.
на замовлення 3614 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 321+ | 1.40 грн |
| 417+ | 1.00 грн |
| 432+ | 0.97 грн |
| 455+ | 0.92 грн |
| 500+ | 0.89 грн |
| MBRB20100CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Kind of package: reel; tape
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Kind of package: reel; tape
Max. load current: 20A
на замовлення 333 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 126.82 грн |
| 10+ | 94.37 грн |
| 25+ | 81.01 грн |
| 50+ | 70.15 грн |
| 100+ | 68.48 грн |
| MC14014BDG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 1
Family: HEF4000B
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 1
Family: HEF4000B
на замовлення 425 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.48 грн |
| 21+ | 20.80 грн |
| 25+ | 18.71 грн |
| 48+ | 17.46 грн |
| 96+ | 16.29 грн |
| 144+ | 15.62 грн |
| 288+ | 14.78 грн |
| 1N5356BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 1N53xxB
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 5W
Zener voltage: 19V
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 1N53xxB
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 5W
Zener voltage: 19V
Manufacturer series: 1N53xxB
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| 1N5401RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Case: DO27
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 50µA
Max. forward impulse current: 200A
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Case: DO27
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 50µA
Max. forward impulse current: 200A
Kind of package: reel; tape
на замовлення 230 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.88 грн |
| 34+ | 12.36 грн |
| 50+ | 10.61 грн |
| 100+ | 10.36 грн |
| 1N5401G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Case: DO27
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 50µA
Max. forward impulse current: 200A
Kind of package: bulk
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Case: DO27
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 50µA
Max. forward impulse current: 200A
Kind of package: bulk
на замовлення 427 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.38 грн |
| 28+ | 15.12 грн |
| 100+ | 10.86 грн |
| BC847BM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 7920 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.99 грн |
| 31+ | 13.86 грн |
| 50+ | 9.79 грн |
| 100+ | 8.11 грн |
| 250+ | 6.31 грн |
| 500+ | 5.26 грн |
| 1000+ | 4.44 грн |
| 5000+ | 3.22 грн |
| FCB070N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 70mΩ
Gate-source voltage: ±30V
Drain current: 44A
Drain-source voltage: 650V
Power dissipation: 312W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 70mΩ
Gate-source voltage: ±30V
Drain current: 44A
Drain-source voltage: 650V
Power dissipation: 312W
на замовлення 437 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 478.49 грн |
| 10+ | 300.66 грн |
| 100+ | 299.83 грн |
| NTBL070N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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| LM833DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
на замовлення 2551 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.69 грн |
| 28+ | 15.37 грн |
| 31+ | 13.53 грн |
| 37+ | 11.53 грн |
| 100+ | 9.52 грн |
| 200+ | 8.94 грн |
| 250+ | 8.77 грн |
| 2500+ | 8.44 грн |
| MC14584BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of package: tube
Number of inputs: 1
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Family: HEF4000B
Kind of gate: NOT
Kind of input: with Schmitt trigger
Technology: CMOS
Delay time: 100ns
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of package: tube
Number of inputs: 1
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Family: HEF4000B
Kind of gate: NOT
Kind of input: with Schmitt trigger
Technology: CMOS
Delay time: 100ns
на замовлення 358 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.58 грн |
| 19+ | 22.63 грн |
| 25+ | 20.55 грн |
| 55+ | 18.62 грн |
| 110+ | 17.12 грн |
| 275+ | 15.95 грн |
| MC14584BDTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Number of inputs: 1
Supply voltage: 3...18V DC
Kind of gate: NOT
Technology: CMOS
Number of channels: hex; 6
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Number of inputs: 1
Supply voltage: 3...18V DC
Kind of gate: NOT
Technology: CMOS
Number of channels: hex; 6
Family: HEF4000B
на замовлення 2048 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.58 грн |
| 19+ | 22.80 грн |
| NC7SB3157P6X |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70-6; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 10µA
Number of channels: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70-6; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 10µA
Number of channels: 1
на замовлення 7097 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.39 грн |
| 38+ | 11.19 грн |
| 43+ | 9.77 грн |
| 51+ | 8.27 грн |
| 57+ | 7.43 грн |
| 100+ | 6.85 грн |
| 250+ | 5.93 грн |
| 3000+ | 4.59 грн |
| FQB4N80TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FQI4N80TU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| MMBFJ175LT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Kind of package: reel; tape
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
On-state resistance: 125Ω
Drain current: 7mA
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Kind of package: reel; tape
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
On-state resistance: 125Ω
Drain current: 7mA
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
на замовлення 437 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.28 грн |
| 27+ | 15.95 грн |
| 33+ | 12.95 грн |
| 50+ | 11.27 грн |
| 100+ | 10.02 грн |
| 250+ | 8.94 грн |
| SMMBFJ175LT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23
Drain-source voltage: -25V
Kind of package: reel; tape
Power dissipation: 0.225W
Kind of channel: enhancement
On-state resistance: 125Ω
Drain current: -60mA
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23
Drain-source voltage: -25V
Kind of package: reel; tape
Power dissipation: 0.225W
Kind of channel: enhancement
On-state resistance: 125Ω
Drain current: -60mA
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
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од. на суму грн.
| NGTB40N120FL2WG |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 488.38 грн |
| NGTB40N120FL3WG |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Power dissipation: 227W
Case: TO247-3
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Power dissipation: 227W
Case: TO247-3
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
на замовлення 1 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 477.59 грн |
| MC14043BDR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: RS latch
Case: SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Kind of package: reel; tape
Number of inputs: 2
Supply voltage: 3...18V DC
Number of channels: 4
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: RS latch
Case: SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Kind of package: reel; tape
Number of inputs: 2
Supply voltage: 3...18V DC
Number of channels: 4
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| MUR1640CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
на замовлення 144 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 106.13 грн |
| MC14093BDTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
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| MC74HC541ADWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
на замовлення 256 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.08 грн |
| 15+ | 29.06 грн |
| 25+ | 26.81 грн |
| 38+ | 25.72 грн |
| 114+ | 22.47 грн |
| MM74HC541WMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SOIC20; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SOIC20; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
на замовлення 927 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.27 грн |
| 13+ | 34.08 грн |
| MM74HC541WM |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
на замовлення 99 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.27 грн |
| 13+ | 32.74 грн |
| 15+ | 29.06 грн |
| 25+ | 24.22 грн |
| 38+ | 22.30 грн |
| MM74HC541MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
на замовлення 104 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.16 грн |
| 11+ | 40.84 грн |
| 25+ | 36.83 грн |
| 75+ | 34.58 грн |
| MM74HC541MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
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| MC74HC541ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
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| MC74HC541ADTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
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| MC74HC541ADWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
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| 1N4750A-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4750ATR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| CAT24C08WI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
на замовлення 1688 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.89 грн |
| 26+ | 16.29 грн |
| 50+ | 15.28 грн |
| 100+ | 14.28 грн |
| 250+ | 13.61 грн |
| NV24C08DWVLT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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| NV24C08MUW3VLTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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| CAT24C08C4ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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| CAT24C08C4CTR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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| CAT24C08C5ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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| CAT24C08TDI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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| CAT24C08YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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| CAV24C08WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| CAV24C08YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| ULQ2003ADR2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Case: SO16
Output current: 0.5A
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of integrated circuit: darlington; transistor array
Number of channels: 7
Output voltage: 50V
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Case: SO16
Output current: 0.5A
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of integrated circuit: darlington; transistor array
Number of channels: 7
Output voltage: 50V
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| BAS70LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.1A
на замовлення 5788 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.20 грн |
| 82+ | 5.09 грн |
| 101+ | 4.14 грн |
| 112+ | 3.73 грн |
| 250+ | 3.21 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.39 грн |
| 3000+ | 1.77 грн |
| FAN7393AMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 12...20V
Output current: 2.5A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 12...20V
Output current: 2.5A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| MC74HC393ADR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC
Type of integrated circuit: digital
Case: SO14
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 160µA
Number of channels: 2
Supply voltage: 2...6V DC
Kind of integrated circuit: asynchronous counter
Technology: CMOS; TTL
Category: Counters/dividers
Description: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC
Type of integrated circuit: digital
Case: SO14
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 160µA
Number of channels: 2
Supply voltage: 2...6V DC
Kind of integrated circuit: asynchronous counter
Technology: CMOS; TTL
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| MC74HC393ADTR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Number of channels: 2
Supply voltage: 2...6V DC
Kind of integrated circuit: 4-stage; binary ripple counter
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Number of channels: 2
Supply voltage: 2...6V DC
Kind of integrated circuit: 4-stage; binary ripple counter
Technology: CMOS
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| NTJS4151PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 160 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.18 грн |
| 25+ | 16.95 грн |
| 50+ | 12.86 грн |
| 100+ | 11.44 грн |
| MC14490DWG |
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Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator
Type of integrated circuit: digital
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator
Type of integrated circuit: digital
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| MC14490DWR2G |
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Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator; hex
Type of integrated circuit: digital
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator; hex
Type of integrated circuit: digital
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| MMBFJ177 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
товару немає в наявності
В кошику
од. на суму грн.



























