| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MC74HC245ADWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Family: HC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM74HC245AMTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB Type of integrated circuit: digital Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20WB Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Family: HC Manufacturer series: HC |
на замовлення 201 шт: термін постачання 21-30 дні (днів) |
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MM74HC245AMTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 160µA Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MM74HC245ASJ | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SOP20; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS Case: SOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM74HC245AWM | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 80µA Manufacturer series: HC |
на замовлення 184 шт: термін постачання 21-30 дні (днів) |
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MM74HC245AWMX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4448WS | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323F Max. forward voltage: 1V Kind of package: reel; tape |
на замовлення 1364 шт: термін постачання 21-30 дні (днів) |
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BD13916S | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.25W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD13916STU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: tube |
на замовлення 1325 шт: термін постачання 21-30 дні (днів) |
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BD139G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
на замовлення 608 шт: термін постачання 21-30 дні (днів) |
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2N7000-D26Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
на замовлення 1739 шт: термін постачання 21-30 дні (днів) |
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2N7000-D74Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7000-D75Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
на замовлення 2009 шт: термін постачання 21-30 дні (днів) |
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2N7000BU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7000TA | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
на замовлення 1717 шт: термін постачання 21-30 дні (днів) |
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BS170 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Technology: DMOS |
на замовлення 11095 шт: термін постачання 21-30 дні (днів) |
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BS170-D75Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 5781 шт: термін постачання 21-30 дні (днів) |
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BS170-D26Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 1458 шт: термін постачання 21-30 дні (днів) |
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BS170-D27Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 2322 шт: термін постачання 21-30 дні (днів) |
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BC807-40LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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BC807-40LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD140G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225 Current gain: 40...250 Collector-emitter voltage: 80V Polarisation: bipolar Kind of package: bulk Type of transistor: PNP Mounting: THT Case: TO225 Power dissipation: 12.5W Collector current: 1.5A |
на замовлення 367 шт: термін постачання 21-30 дні (днів) |
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MMBD1401 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
на замовлення 2724 шт: термін постачання 21-30 дні (днів) |
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MMBD1403 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: double series Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1404 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
на замовлення 414 шт: термін постачання 21-30 дні (днів) |
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MMBD1404A | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Max. forward voltage: 1.25V Max. forward impulse current: 2A Max. off-state voltage: 175V Kind of package: reel; tape Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.6A Power dissipation: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1405 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
на замовлення 2718 шт: термін постачання 21-30 дні (днів) |
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2N3904BU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 300MHz |
на замовлення 3362 шт: термін постачання 21-30 дні (днів) |
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2N3904TFR | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
на замовлення 560 шт: термін постачання 21-30 дні (днів) |
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BSS138L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 9530 шт: термін постачання 21-30 дні (днів) |
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BSS138LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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BSS138LT3G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2702 шт: термін постачання 21-30 дні (днів) |
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BSS138W | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.21A Power dissipation: 0.34W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 5.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1470 шт: термін постачання 21-30 дні (днів) |
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1N4448TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 50µA Kind of package: reel; tape Power dissipation: 0.5W |
на замовлення 9341 шт: термін постачання 21-30 дні (днів) |
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LM2904DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA |
на замовлення 7370 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Power dissipation: 116W Case: TO247-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGH40N60SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Power dissipation: 174W Case: TO247-3 Mounting: THT Gate charge: 180nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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FGH40N60UFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Power dissipation: 116W Case: TO247-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A |
на замовлення 188 шт: термін постачання 21-30 дні (днів) |
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| FGAF40N60UFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 150nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 160A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC78LC33NTRG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 53mV Output voltage: 3.3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4.3...12V |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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BCP53-10T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 2111 шт: термін постачання 21-30 дні (днів) |
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BCP53-16T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 1006 шт: термін постачання 21-30 дні (днів) |
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LM2574DW-ADJR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: SO16-W Mounting: SMD Topology: buck Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM2574N-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
на замовлення 2086 шт: термін постачання 21-30 дні (днів) |
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LM2574N-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
на замовлення 533 шт: термін постачання 21-30 дні (днів) |
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BC856BDW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 6590 шт: термін постачання 21-30 дні (днів) |
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BC856BLT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1795 шт: термін постачання 21-30 дні (днів) |
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BC856BLT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC856BM3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.265W Case: SOT723 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1980 шт: термін постачання 21-30 дні (днів) |
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MMBT2222ALT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 38365 шт: термін постачання 21-30 дні (днів) |
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MMBT2222ALT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBT2222ATT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC75; SOT416 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 2428 шт: термін постачання 21-30 дні (днів) |
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MMBT2222AWT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 6589 шт: термін постачання 21-30 дні (днів) |
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MMBT2222AWT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5408RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA Mounting: THT Leakage current: 50µA Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: reel; tape Case: DO27 Type of diode: rectifying Semiconductor structure: single diode |
на замовлення 1478 шт: термін постачання 21-30 дні (днів) |
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FOD3120SD | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5kV Case: Gull wing 8 Slew rate: 35kV/μs |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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FOD3120SDV | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5kV Case: Gull wing 8 Turn-on time: 60ns Turn-off time: 60ns Slew rate: 35kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74AC132DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: AC |
на замовлення 449 шт: термін постачання 21-30 дні (днів) |
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BCP56-16T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
на замовлення 221 шт: термін постачання 21-30 дні (днів) |
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BCP56-16T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
на замовлення 2240 шт: термін постачання 21-30 дні (днів) |
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| MC74HC245ADWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
товару немає в наявності
В кошику
од. на суму грн.
| MM74HC245AMTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
на замовлення 201 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.74 грн |
| 10+ | 50.34 грн |
| 25+ | 41.03 грн |
| 75+ | 34.11 грн |
| MM74HC245AMTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 160µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 160µA
Manufacturer series: HC
товару немає в наявності
В кошику
од. на суму грн.
| MM74HC245ASJ |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
товару немає в наявності
В кошику
од. на суму грн.
| MM74HC245AWM |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
на замовлення 184 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.35 грн |
| 12+ | 35.02 грн |
| 25+ | 32.30 грн |
| 38+ | 31.23 грн |
| 114+ | 30.98 грн |
| MM74HC245AWMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
товару немає в наявності
В кошику
од. на суму грн.
| 1N4448WS |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
на замовлення 1364 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 90+ | 4.61 грн |
| 146+ | 2.83 грн |
| 500+ | 2.00 грн |
| 1000+ | 1.76 грн |
| BD13916S |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| BD13916STU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
на замовлення 1325 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.89 грн |
| 15+ | 29.17 грн |
| 25+ | 24.31 грн |
| 60+ | 20.76 грн |
| 120+ | 18.54 грн |
| BD139G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
на замовлення 608 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.30 грн |
| 10+ | 46.31 грн |
| 100+ | 31.72 грн |
| 200+ | 27.93 грн |
| 2N7000-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
на замовлення 1739 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.83 грн |
| 21+ | 20.27 грн |
| 50+ | 13.35 грн |
| 100+ | 11.04 грн |
| 500+ | 7.75 грн |
| 2N7000-D74Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
товару немає в наявності
В кошику
од. на суму грн.
| 2N7000-D75Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
на замовлення 2009 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.83 грн |
| 21+ | 19.94 грн |
| 100+ | 11.87 грн |
| 500+ | 8.65 грн |
| 1000+ | 7.75 грн |
| 2N7000BU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N7000TA |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
на замовлення 1717 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.06 грн |
| 21+ | 19.86 грн |
| 100+ | 11.78 грн |
| 500+ | 8.40 грн |
| 1000+ | 7.50 грн |
| BS170 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
на замовлення 11095 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.18 грн |
| 31+ | 13.43 грн |
| 43+ | 9.81 грн |
| 100+ | 7.00 грн |
| 500+ | 5.77 грн |
| BS170-D75Z |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 5781 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.86 грн |
| 31+ | 13.60 грн |
| 100+ | 10.46 грн |
| 500+ | 7.09 грн |
| BS170-D26Z |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 1458 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.72 грн |
| 20+ | 21.18 грн |
| 25+ | 17.30 грн |
| 50+ | 14.83 грн |
| 100+ | 12.61 грн |
| 500+ | 8.98 грн |
| 1000+ | 7.91 грн |
| BS170-D27Z |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 2322 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 24+ | 17.55 грн |
| 30+ | 14.17 грн |
| 100+ | 10.22 грн |
| 500+ | 7.25 грн |
| 1000+ | 6.34 грн |
| 2000+ | 6.01 грн |
| BC807-40LT1G | ![]() |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 41.20 грн |
| BC807-40LT3G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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В кошику
од. на суму грн.
| BD140G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
на замовлення 367 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.06 грн |
| 10+ | 48.70 грн |
| 50+ | 38.23 грн |
| 100+ | 33.95 грн |
| 250+ | 32.96 грн |
| MMBD1401 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
на замовлення 2724 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 79+ | 5.27 грн |
| 91+ | 4.53 грн |
| 100+ | 4.28 грн |
| 250+ | 4.04 грн |
| MMBD1403 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
товару немає в наявності
В кошику
од. на суму грн.
| MMBD1404 |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
на замовлення 414 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.42 грн |
| 43+ | 9.72 грн |
| 47+ | 8.90 грн |
| 100+ | 6.10 грн |
| MMBD1404A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
товару немає в наявності
В кошику
од. на суму грн.
| MMBD1405 |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
на замовлення 2718 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.20 грн |
| 40+ | 10.38 грн |
| 52+ | 7.94 грн |
| 100+ | 7.05 грн |
| 500+ | 5.39 грн |
| 1000+ | 4.83 грн |
| 2N3904BU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 3362 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.75 грн |
| 43+ | 9.72 грн |
| 51+ | 8.16 грн |
| 100+ | 4.97 грн |
| 500+ | 3.62 грн |
| 1000+ | 3.11 грн |
| 2000+ | 3.02 грн |
| 2N3904TFR |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 560 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 77+ | 5.36 грн |
| 98+ | 4.24 грн |
| 112+ | 3.71 грн |
| 500+ | 3.40 грн |
| BSS138L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 9530 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.54 грн |
| 54+ | 7.75 грн |
| 70+ | 5.95 грн |
| 100+ | 5.24 грн |
| 250+ | 4.39 грн |
| 500+ | 3.81 грн |
| 1000+ | 3.27 грн |
| 3000+ | 2.50 грн |
| 6000+ | 2.06 грн |
| BSS138LT1G |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 77 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.54 грн |
| 54+ | 7.75 грн |
| 66+ | 6.30 грн |
| BSS138LT3G |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2702 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.54 грн |
| 52+ | 8.07 грн |
| 62+ | 6.69 грн |
| 100+ | 4.88 грн |
| 250+ | 3.87 грн |
| 500+ | 3.35 грн |
| 1000+ | 2.93 грн |
| 2500+ | 2.58 грн |
| BSS138W |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.97 грн |
| 44+ | 9.48 грн |
| 58+ | 7.19 грн |
| 100+ | 6.31 грн |
| 500+ | 4.53 грн |
| 1000+ | 4.03 грн |
| 1N4448TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
на замовлення 9341 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 125+ | 3.30 грн |
| 188+ | 2.19 грн |
| 228+ | 1.81 грн |
| 291+ | 1.42 грн |
| 500+ | 1.16 грн |
| 1000+ | 0.96 грн |
| 2000+ | 0.87 грн |
| LM2904DR2G | ![]() |
![]() |
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
на замовлення 7370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.31 грн |
| 46+ | 9.06 грн |
| 50+ | 8.40 грн |
| 100+ | 6.09 грн |
| 250+ | 5.29 грн |
| 1000+ | 4.41 грн |
| 2500+ | 4.23 грн |
| FGH40N60SFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
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| FGH40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
на замовлення 92 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 276.85 грн |
| 3+ | 235.66 грн |
| 10+ | 201.87 грн |
| 30+ | 197.75 грн |
| FGH40N60UFDTU |
![]() |
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
на замовлення 188 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 234.26 грн |
| 10+ | 172.21 грн |
| FGAF40N60UFDTU |
![]() |
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
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од. на суму грн.
| MC78LC33NTRG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.94 грн |
| 18+ | 24.06 грн |
| 20+ | 21.34 грн |
| 25+ | 21.26 грн |
| BCP53-10T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 2111 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.71 грн |
| 17+ | 24.97 грн |
| 100+ | 15.74 грн |
| 200+ | 13.84 грн |
| 500+ | 11.78 грн |
| 1000+ | 10.38 грн |
| 2000+ | 9.72 грн |
| BCP53-16T1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 1006 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 23+ | 18.04 грн |
| 50+ | 12.94 грн |
| 100+ | 11.29 грн |
| 250+ | 9.81 грн |
| 500+ | 8.98 грн |
| 1000+ | 8.32 грн |
| LM2574DW-ADJR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
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В кошику
од. на суму грн.
| LM2574N-5G | ![]() |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 2086 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 100.27 грн |
| 10+ | 70.04 грн |
| 50+ | 60.15 грн |
| 100+ | 57.68 грн |
| 250+ | 56.85 грн |
| LM2574N-ADJG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 533 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.24 грн |
| 10+ | 79.93 грн |
| 50+ | 70.86 грн |
| BC856BDW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 6590 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 79+ | 5.27 грн |
| 116+ | 3.58 грн |
| 137+ | 3.02 грн |
| 500+ | 2.09 грн |
| 1000+ | 1.83 грн |
| 3000+ | 1.55 грн |
| BC856BLT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.99 грн |
| 90+ | 4.61 грн |
| 134+ | 3.08 грн |
| 161+ | 2.56 грн |
| 500+ | 1.69 грн |
| 1000+ | 1.43 грн |
| BC856BLT3G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| BC856BM3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.54 грн |
| 46+ | 9.06 грн |
| 54+ | 7.75 грн |
| 100+ | 4.29 грн |
| 500+ | 2.87 грн |
| 1000+ | 2.46 грн |
| MMBT2222ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 38365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 73+ | 5.69 грн |
| 123+ | 3.36 грн |
| 500+ | 2.28 грн |
| 1000+ | 1.93 грн |
| 3000+ | 1.47 грн |
| 9000+ | 1.11 грн |
| 24000+ | 0.86 грн |
| 30000+ | 0.81 грн |
| MMBT2222ALT3G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
| MMBT2222ATT1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 2428 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.21 грн |
| 97+ | 4.28 грн |
| 128+ | 3.23 грн |
| 143+ | 2.89 грн |
| 500+ | 2.38 грн |
| 1000+ | 2.16 грн |
| MMBT2222AWT1G | ![]() |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 6589 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 76+ | 5.44 грн |
| 134+ | 3.08 грн |
| 500+ | 2.06 грн |
| 1000+ | 1.73 грн |
| 3000+ | 1.33 грн |
| 6000+ | 1.24 грн |
| MMBT2222AWT3G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
| 1N5408RLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
на замовлення 1478 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.18 грн |
| 37+ | 11.21 грн |
| 50+ | 9.06 грн |
| 100+ | 8.24 грн |
| 200+ | 7.42 грн |
| 500+ | 7.00 грн |
| FOD3120SD |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 162.39 грн |
| 5+ | 121.12 грн |
| 10+ | 110.41 грн |
| 100+ | 78.28 грн |
| 250+ | 65.09 грн |
| 500+ | 56.03 грн |
| 1000+ | 49.44 грн |
| FOD3120SDV |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Turn-on time: 60ns
Turn-off time: 60ns
Slew rate: 35kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Turn-on time: 60ns
Turn-off time: 60ns
Slew rate: 35kV/μs
товару немає в наявності
В кошику
од. на суму грн.
| MC74AC132DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: AC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: AC
на замовлення 449 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.51 грн |
| 23+ | 17.96 грн |
| 26+ | 16.31 грн |
| 55+ | 15.16 грн |
| 110+ | 15.00 грн |
| BCP56-16T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 221 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.83 грн |
| 24+ | 17.47 грн |
| 50+ | 14.01 грн |
| 100+ | 12.85 грн |
| BCP56-16T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 2240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.94 грн |
| 17+ | 24.47 грн |
| 50+ | 17.88 грн |
| 100+ | 15.41 грн |
| 250+ | 12.77 грн |
| 500+ | 11.21 грн |
| 1000+ | 9.97 грн |
| 2000+ | 9.39 грн |


























