| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC14044BDG | ONSEMI |
Category: LatchesDescription: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; HEF4000B Case: SO16 Type of integrated circuit: digital Family: HEF4000B Mounting: SMD Kind of package: tube Operating temperature: -40...85°C Number of channels: 4 Supply voltage: 3...18V DC Kind of output: 3-state Kind of integrated circuit: RS latch Trigger: level-triggered |
на замовлення 158 шт: термін постачання 21-30 дні (днів) |
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NDT2955 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223 Kind of package: reel; tape Case: SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -2.5A On-state resistance: 0.3Ω Power dissipation: 3W Gate-source voltage: ±20V Polarisation: unipolar |
на замовлення 4391 шт: термін постачання 21-30 дні (днів) |
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| MUR840G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 100A; TO220AC; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5226BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode; 25uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 25µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ESD7351HT1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 5V; SOD323; reel,tape; 0.43÷0.6pF; ESD Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Mounting: SMD Leakage current: 1nA Kind of package: reel; tape Capacitance: 0.43...0.6pF Version: ESD Peak pulse power dissipation: 0.15W Case: SOD323 |
на замовлення 3570 шт: термін постачання 21-30 дні (днів) |
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MUR2020RG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 20A; tube; TO220AC; 95ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 20A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Reverse recovery time: 95ns |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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MC7918CTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900 Kind of package: tube Kind of voltage regulator: fixed; linear Mounting: THT Case: TO220AB Operating temperature: 0...125°C Output voltage: -18V Heatsink thickness: 0.508...0.61mm Number of channels: 1 Output current: 1A Voltage drop: 1.3V Tolerance: ±4% Type of integrated circuit: voltage regulator Manufacturer series: MC7900 |
на замовлення 2753 шт: термін постачання 21-30 дні (днів) |
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1N5221B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1mA Manufacturer series: 1N52xxB |
на замовлення 4929 шт: термін постачання 21-30 дні (днів) |
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1N5225B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 50uA; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50µA Manufacturer series: 1N52xxB |
на замовлення 4989 шт: термін постачання 21-30 дні (днів) |
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| 1N5227B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 15uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 15µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5228BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode; 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5222B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 100uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.5V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1mA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5227BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode; 15uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 15µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5229BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FQD13N10LTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1748 шт: термін постачання 21-30 дні (днів) |
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FQD9N25TM-F080 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Power dissipation: 55W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 29.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTA114YET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 80...140 Base-emitter resistor: 47kΩ Base resistor: 10kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP |
на замовлення 7774 шт: термін постачання 21-30 дні (днів) |
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| NCP1256ESN65T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Operating voltage: 8.9...26V DC Case: TSOP6 Mounting: SMD Operating temperature: -40...125°C Output current: -0.5...0.5A Number of channels: 1 Frequency: 61...70kHz Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMSZ5256ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Manufacturer series: MMSZ52xxE Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZMMBZ5256ELT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode Case: SOT23 Mounting: SMD Kind of package: reel; tape Manufacturer series: MMBZ52xxELT1G Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.3W Tolerance: ±5% Zener voltage: 30V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZMMSZ5256ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Manufacturer series: MMSZ52xxE Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 30V Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
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NTD24N06LT4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 36mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
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FOD4216 | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us Turn-on time: 60µs Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: DIP6 Manufacturer series: FOD4216 Type of optocoupler: optotriac Mounting: THT Kind of output: triac; without zero voltage crossing driver Turn-off time: 52µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N5363BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 30V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTF2955T1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223 Kind of package: reel; tape Case: SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -2A On-state resistance: 0.185Ω Power dissipation: 2.3W Gate-source voltage: ±20V Polarisation: unipolar |
на замовлення 488 шт: термін постачання 21-30 дні (днів) |
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MJD2955G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK Kind of package: tube Case: DPAK Mounting: SMD Type of transistor: PNP Power dissipation: 20W Current gain: 20...100 Collector current: 10A Collector-emitter voltage: 60V Frequency: 2MHz Polarisation: bipolar |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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NVF2955T1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 Kind of package: reel; tape Case: SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -2.6A Gate charge: 14.3nC On-state resistance: 154mΩ Power dissipation: 2.3W Gate-source voltage: ±20V Polarisation: unipolar |
на замовлення 740 шт: термін постачання 21-30 дні (днів) |
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| MJF2955G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP Kind of package: tube Case: TO220FP Mounting: THT Type of transistor: PNP Power dissipation: 30W Current gain: 20...100 Collector current: 10A Collector-emitter voltage: 90V Frequency: 2MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MOCD207D2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV Collector-emitter voltage: 70V Case: SOIC8 Max. off-state voltage: 6V Turn-on time: 7.5µs Turn-off time: 5.7µs Manufacturer series: MOCD207 CTR@If: 100-200%@10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NDUL03N150CG | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF Case: TO3PF Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 10.5Ω Drain current: 2.5A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 1.5kV Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MURS360BT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZ1SMA5929BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSD103T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW Mounting: SMD Capacitance: 5pF Reverse recovery time: 50ns Leakage current: 0.1mA Load current: 0.2A Power dissipation: 0.4W Max. forward voltage: 1.25V Max. off-state voltage: 250V Case: SOD123 Semiconductor structure: single diode Type of diode: switching |
на замовлення 931 шт: термін постачання 21-30 дні (днів) |
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| SMMSD103T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V Mounting: SMD Reverse recovery time: 50ns Load current: 0.2A Max. forward voltage: 1.25V Max. forward impulse current: 625mA Max. off-state voltage: 250V Kind of package: reel; tape Application: automotive industry Case: SOD123 Semiconductor structure: single diode Type of diode: switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14022BDR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B Operating temperature: -55...125°C Family: HEF4000B Technology: CMOS Kind of integrated circuit: counter; octal Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Number of channels: 1 Supply voltage: 3...18V DC Number of inputs: 3 Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||||
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FDS4685 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.2A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Gate charge: 27nC |
на замовлення 756 шт: термін постачання 21-30 дні (днів) |
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NTMD6P02R2G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
| 1N485B | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 200V; 0.2A; bulk; Ifsm: 4A; DO35 Mounting: THT Kind of package: bulk Load current: 0.2A Max. off-state voltage: 200V Max. forward impulse current: 4A Case: DO35 Semiconductor structure: single diode Features of semiconductor devices: small signal Type of diode: switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N485BTR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 200V; 0.2A; reel,tape; Ifsm: 4A; DO35 Mounting: THT Kind of package: reel; tape Load current: 0.2A Max. off-state voltage: 200V Max. forward impulse current: 4A Case: DO35 Semiconductor structure: single diode Features of semiconductor devices: small signal Type of diode: switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDLL485B | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 180V; 0.5A; SOD80; Ufmax: 1V; reel,tape Mounting: SMD Kind of package: reel; tape Load current: 0.5A Max. forward voltage: 1V Max. off-state voltage: 180V Case: SOD80 Semiconductor structure: single diode Features of semiconductor devices: small signal Type of diode: switching |
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В кошику од. на суму грн. | |||||||||||||||||||
| FDMS4D0N12C | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 114A Pulsed drain current: 628A Power dissipation: 106W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
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MC14490DWG | ONSEMI |
Category: Other logic integrated circuitsDescription: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16 Technology: CMOS Kind of integrated circuit: contact bounce eliminator Type of integrated circuit: digital Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3...18V DC Case: SO16 |
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В кошику од. на суму грн. | ||||||||||||||||||
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MC14490DWR2G | ONSEMI |
Category: Other logic integrated circuitsDescription: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC Technology: CMOS Kind of integrated circuit: contact bounce eliminator; hex Type of integrated circuit: digital Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 3...18V DC Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| KA1M0565RYDTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 3.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -25...85°C Topology: flyback; forward On-state resistance: 2.2Ω Duty cycle factor: 74...80% Kind of package: tube Power: 140W Operating voltage: 10...25V DC |
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В кошику од. на суму грн. | |||||||||||||||||||
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ESD7351XV2T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF; ESD Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 5V Case: SOD523 Mounting: SMD Leakage current: 1nA Kind of package: reel; tape Capacitance: 0.43...0.6pF Version: ESD |
на замовлення 4742 шт: термін постачання 21-30 дні (днів) |
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FFPF20UP30DNTU | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220FP Max. forward voltage: 1.3V Max. load current: 20A Reverse recovery time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74VHC4066DR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC Type of integrated circuit: analog switch Number of channels: 4 Case: SO14 Supply voltage: 2...12V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 40µA Kind of integrated circuit: demultiplexer; multiplexer Technology: CMOS Manufacturer series: VHC |
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MC74VHC4066DTR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA Type of integrated circuit: analog switch Number of channels: 4 Case: TSSOP14 Supply voltage: 2...12V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 40µA Kind of integrated circuit: demultiplexer; multiplexer Technology: CMOS Manufacturer series: VHC |
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2SC5569-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 7A Power dissipation: 1.3W Case: SOT89 Current gain: 560...200 Mounting: SMD Kind of package: reel; tape Frequency: 330MHz |
на замовлення 788 шт: термін постачання 21-30 дні (днів) |
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BC547B | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Frequency: 300MHz |
на замовлення 5792 шт: термін постачання 21-30 дні (днів) |
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| NCP163AFCT120T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: WLCSP4 Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 0.25A Input voltage: 2.2...5.5V Number of channels: 1 Tolerance: ±2% Output voltage: 1.2V Manufacturer series: NCP163 |
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| NCP156AAFCT120280T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: WLCSP6 Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 250...500mA Input voltage: 0.8...3.6V Number of channels: 2 Tolerance: ±1% Output voltage: 1.2V; 2.8V Manufacturer series: NCP156 |
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NTA7002NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.154A Power dissipation: 0.3W Case: SC75 Gate-source voltage: ±10V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 5777 шт: термін постачання 21-30 дні (днів) |
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| SZESDR0502BT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT416 Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| NSVBAS16TT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: SC75 Max. forward voltage: 1V Application: automotive industry Reverse recovery time: 6ns |
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В кошику од. на суму грн. | |||||||||||||||||||
| NSVDAN222T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape Type of diode: switching Semiconductor structure: common cathode; double Mounting: SMD Case: SOT416 Kind of package: reel; tape Application: automotive industry Load current: 0.1A Max. forward voltage: 1.2V Max. off-state voltage: 80V Features of semiconductor devices: small signal Reverse recovery time: 4ns |
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В кошику од. на суму грн. | |||||||||||||||||||
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MC74HCT132ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 25ns Family: HCT |
на замовлення 2378 шт: термін постачання 21-30 дні (днів) |
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BZX84C7V5LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZX84C |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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| SZBZX84C7V5LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZX84C Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| SZBZX84C7V5ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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В кошику од. на суму грн. |
| MC14044BDG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; HEF4000B
Case: SO16
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Number of channels: 4
Supply voltage: 3...18V DC
Kind of output: 3-state
Kind of integrated circuit: RS latch
Trigger: level-triggered
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; HEF4000B
Case: SO16
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Number of channels: 4
Supply voltage: 3...18V DC
Kind of output: 3-state
Kind of integrated circuit: RS latch
Trigger: level-triggered
на замовлення 158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.04 грн |
| 18+ | 22.78 грн |
| 25+ | 20.87 грн |
| 48+ | 19.52 грн |
| 144+ | 17.38 грн |
| NDT2955 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.5A
On-state resistance: 0.3Ω
Power dissipation: 3W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.5A
On-state resistance: 0.3Ω
Power dissipation: 3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 4391 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.84 грн |
| 11+ | 38.17 грн |
| 50+ | 29.52 грн |
| 100+ | 26.27 грн |
| 250+ | 22.46 грн |
| 500+ | 20.00 грн |
| 1000+ | 17.70 грн |
| 2000+ | 15.63 грн |
| 4000+ | 14.92 грн |
| MUR840G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 100A; TO220AC; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 100A; TO220AC; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Reverse recovery time: 60ns
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| 1N5226BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode; 25uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 25µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode; 25uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 25µA
Manufacturer series: 1N52xxB
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| ESD7351HT1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5V; SOD323; reel,tape; 0.43÷0.6pF; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD323
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5V; SOD323; reel,tape; 0.43÷0.6pF; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD323
на замовлення 3570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.24 грн |
| 34+ | 11.75 грн |
| 41+ | 9.68 грн |
| 100+ | 8.33 грн |
| MUR2020RG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; tube; TO220AC; 95ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Reverse recovery time: 95ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; tube; TO220AC; 95ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Reverse recovery time: 95ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.73 грн |
| 4+ | 119.83 грн |
| 10+ | 105.55 грн |
| 11+ | 90.47 грн |
| 29+ | 84.92 грн |
| MC7918CTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Number of channels: 1
Output current: 1A
Voltage drop: 1.3V
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Number of channels: 1
Output current: 1A
Voltage drop: 1.3V
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
на замовлення 2753 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.02 грн |
| 15+ | 27.06 грн |
| 25+ | 24.52 грн |
| 50+ | 23.01 грн |
| 100+ | 21.67 грн |
| 250+ | 20.24 грн |
| 500+ | 19.36 грн |
| 1000+ | 18.57 грн |
| 1N5221B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1mA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1mA
Manufacturer series: 1N52xxB
на замовлення 4929 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.84 грн |
| 100+ | 3.97 грн |
| 136+ | 2.94 грн |
| 220+ | 1.81 грн |
| 281+ | 1.41 грн |
| 1N5225B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 50uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 50uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: 1N52xxB
на замовлення 4989 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.84 грн |
| 90+ | 4.44 грн |
| 114+ | 3.49 грн |
| 249+ | 1.60 грн |
| 309+ | 1.29 грн |
| 500+ | 1.22 грн |
| 1N5227B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 15uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 15µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 15uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 15µA
Manufacturer series: 1N52xxB
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| 1N5228BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N52xxB
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| 1N5222B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1mA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1mA
Manufacturer series: 1N52xxB
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| 1N5227BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode; 15uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 15µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode; 15uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 15µA
Manufacturer series: 1N52xxB
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| 1N5229BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 1N52xxB
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| FQD13N10LTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1748 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.70 грн |
| 10+ | 43.17 грн |
| 11+ | 38.73 грн |
| 50+ | 29.28 грн |
| 100+ | 26.11 грн |
| 250+ | 22.78 грн |
| 500+ | 20.71 грн |
| 1000+ | 20.55 грн |
| FQD9N25TM-F080 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
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| DTA114YET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...140
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...140
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
на замовлення 7774 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.55 грн |
| 84+ | 4.76 грн |
| 131+ | 3.04 грн |
| 500+ | 2.26 грн |
| 1000+ | 2.00 грн |
| 3000+ | 1.67 грн |
| 6000+ | 1.48 грн |
| NCP1256ESN65T1G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Operating voltage: 8.9...26V DC
Case: TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Output current: -0.5...0.5A
Number of channels: 1
Frequency: 61...70kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Operating voltage: 8.9...26V DC
Case: TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Output current: -0.5...0.5A
Number of channels: 1
Frequency: 61...70kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
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| MMSZ5256ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 30V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 30V
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| SZMMBZ5256ELT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MMBZ52xxELT1G
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 30V
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MMBZ52xxELT1G
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 30V
Application: automotive industry
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| SZMMSZ5256ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 30V
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 30V
Application: automotive industry
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| NTD24N06LT4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FOD4216 |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Mounting: THT
Kind of output: triac; without zero voltage crossing driver
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Mounting: THT
Kind of output: triac; without zero voltage crossing driver
Turn-off time: 52µs
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| 1N5363BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| NTF2955T1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 0.185Ω
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 0.185Ω
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 488 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.59 грн |
| 10+ | 56.50 грн |
| 50+ | 45.55 грн |
| 100+ | 41.58 грн |
| 200+ | 37.93 грн |
| MJD2955G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: tube
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: tube
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
на замовлення 59 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.21 грн |
| 7+ | 65.87 грн |
| 25+ | 52.54 грн |
| NVF2955T1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 740 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.23 грн |
| 10+ | 48.41 грн |
| MJF2955G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Kind of package: tube
Case: TO220FP
Mounting: THT
Type of transistor: PNP
Power dissipation: 30W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 90V
Frequency: 2MHz
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Kind of package: tube
Case: TO220FP
Mounting: THT
Type of transistor: PNP
Power dissipation: 30W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 90V
Frequency: 2MHz
Polarisation: bipolar
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| MOCD207D2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
Collector-emitter voltage: 70V
Case: SOIC8
Max. off-state voltage: 6V
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Manufacturer series: MOCD207
CTR@If: 100-200%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
Collector-emitter voltage: 70V
Case: SOIC8
Max. off-state voltage: 6V
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Manufacturer series: MOCD207
CTR@If: 100-200%@10mA
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| NDUL03N150CG |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
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| MURS360BT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
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| SZ1SMA5929BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| MMSD103T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW
Mounting: SMD
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Case: SOD123
Semiconductor structure: single diode
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW
Mounting: SMD
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Case: SOD123
Semiconductor structure: single diode
Type of diode: switching
на замовлення 931 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 71+ | 5.63 грн |
| 104+ | 3.84 грн |
| 500+ | 2.94 грн |
| 536+ | 1.75 грн |
| SMMSD103T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 50ns
Load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Max. off-state voltage: 250V
Kind of package: reel; tape
Application: automotive industry
Case: SOD123
Semiconductor structure: single diode
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 50ns
Load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Max. off-state voltage: 250V
Kind of package: reel; tape
Application: automotive industry
Case: SOD123
Semiconductor structure: single diode
Type of diode: switching
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| MC14022BDR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Kind of integrated circuit: counter; octal
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Number of channels: 1
Supply voltage: 3...18V DC
Number of inputs: 3
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Kind of integrated circuit: counter; octal
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Number of channels: 1
Supply voltage: 3...18V DC
Number of inputs: 3
Kind of package: reel; tape
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| FDS4685 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 27nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 27nC
на замовлення 756 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 72.65 грн |
| 10+ | 57.14 грн |
| 21+ | 46.82 грн |
| 56+ | 43.65 грн |
| NTMD6P02R2G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| 1N485B |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; bulk; Ifsm: 4A; DO35
Mounting: THT
Kind of package: bulk
Load current: 0.2A
Max. off-state voltage: 200V
Max. forward impulse current: 4A
Case: DO35
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; bulk; Ifsm: 4A; DO35
Mounting: THT
Kind of package: bulk
Load current: 0.2A
Max. off-state voltage: 200V
Max. forward impulse current: 4A
Case: DO35
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
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| 1N485BTR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; reel,tape; Ifsm: 4A; DO35
Mounting: THT
Kind of package: reel; tape
Load current: 0.2A
Max. off-state voltage: 200V
Max. forward impulse current: 4A
Case: DO35
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; reel,tape; Ifsm: 4A; DO35
Mounting: THT
Kind of package: reel; tape
Load current: 0.2A
Max. off-state voltage: 200V
Max. forward impulse current: 4A
Case: DO35
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
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| FDLL485B |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 180V; 0.5A; SOD80; Ufmax: 1V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Load current: 0.5A
Max. forward voltage: 1V
Max. off-state voltage: 180V
Case: SOD80
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 180V; 0.5A; SOD80; Ufmax: 1V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Load current: 0.5A
Max. forward voltage: 1V
Max. off-state voltage: 180V
Case: SOD80
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
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| FDMS4D0N12C |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 114A
Pulsed drain current: 628A
Power dissipation: 106W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 114A
Pulsed drain current: 628A
Power dissipation: 106W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC14490DWG |
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Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator
Type of integrated circuit: digital
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Case: SO16
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator
Type of integrated circuit: digital
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Case: SO16
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| MC14490DWR2G |
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Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator; hex
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
Case: SOIC16
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator; hex
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
Case: SOIC16
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| KA1M0565RYDTU |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V DC
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| ESD7351XV2T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD523
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD523
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Version: ESD
на замовлення 4742 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.40 грн |
| 60+ | 6.67 грн |
| 69+ | 5.79 грн |
| 107+ | 3.74 грн |
| 250+ | 3.26 грн |
| 500+ | 3.24 грн |
| FFPF20UP30DNTU |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220FP
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220FP
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 45ns
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| MC74VHC4066DR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC
Type of integrated circuit: analog switch
Number of channels: 4
Case: SO14
Supply voltage: 2...12V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Manufacturer series: VHC
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC
Type of integrated circuit: analog switch
Number of channels: 4
Case: SO14
Supply voltage: 2...12V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Manufacturer series: VHC
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| MC74VHC4066DTR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA
Type of integrated circuit: analog switch
Number of channels: 4
Case: TSSOP14
Supply voltage: 2...12V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Manufacturer series: VHC
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA
Type of integrated circuit: analog switch
Number of channels: 4
Case: TSSOP14
Supply voltage: 2...12V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Manufacturer series: VHC
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| 2SC5569-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 1.3W
Case: SOT89
Current gain: 560...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 1.3W
Case: SOT89
Current gain: 560...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
на замовлення 788 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 72.65 грн |
| 12+ | 35.95 грн |
| 50+ | 28.17 грн |
| 100+ | 25.55 грн |
| 200+ | 23.73 грн |
| BC547B |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
на замовлення 5792 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.08 грн |
| 24+ | 16.98 грн |
| 28+ | 14.36 грн |
| 36+ | 11.03 грн |
| 100+ | 7.46 грн |
| 500+ | 5.24 грн |
| 1000+ | 5.08 грн |
| NCP163AFCT120T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP4
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.25A
Input voltage: 2.2...5.5V
Number of channels: 1
Tolerance: ±2%
Output voltage: 1.2V
Manufacturer series: NCP163
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP4
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.25A
Input voltage: 2.2...5.5V
Number of channels: 1
Tolerance: ±2%
Output voltage: 1.2V
Manufacturer series: NCP163
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| NCP156AAFCT120280T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP6
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 250...500mA
Input voltage: 0.8...3.6V
Number of channels: 2
Tolerance: ±1%
Output voltage: 1.2V; 2.8V
Manufacturer series: NCP156
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP6
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 250...500mA
Input voltage: 0.8...3.6V
Number of channels: 2
Tolerance: ±1%
Output voltage: 1.2V; 2.8V
Manufacturer series: NCP156
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| NTA7002NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.154A
Power dissipation: 0.3W
Case: SC75
Gate-source voltage: ±10V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.154A
Power dissipation: 0.3W
Case: SC75
Gate-source voltage: ±10V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 5777 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.82 грн |
| 54+ | 7.46 грн |
| 70+ | 5.68 грн |
| 100+ | 5.05 грн |
| 500+ | 3.77 грн |
| 1000+ | 3.30 грн |
| 1500+ | 3.05 грн |
| 3000+ | 2.78 грн |
| SZESDR0502BT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT416
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT416
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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| NSVBAS16TT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
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| NSVDAN222T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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| MC74HCT132ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 25ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 25ns
Family: HCT
на замовлення 2378 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.15 грн |
| 16+ | 26.03 грн |
| 25+ | 21.59 грн |
| 50+ | 18.89 грн |
| 100+ | 17.14 грн |
| BZX84C7V5LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
на замовлення 450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 61+ | 7.03 грн |
| 105+ | 3.81 грн |
| 136+ | 2.92 грн |
| 166+ | 2.40 грн |
| 201+ | 1.98 грн |
| 250+ | 1.59 грн |
| SZBZX84C7V5LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
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| SZBZX84C7V5ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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