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MBRS140T3G MBRS140T3G ONSEMI MBRS140T3G.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
на замовлення 6673 шт:
термін постачання 14-30 дні (днів)
23+19.88 грн
26+16.53 грн
50+13.51 грн
100+12.17 грн
250+10.24 грн
500+8.90 грн
1000+7.64 грн
2500+6.13 грн
5000+5.04 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
NSS40500UW3T2G ONSEMI nss40500uw3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Case: WDFN3
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 40V
Application: automotive industry
Polarisation: bipolar
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NSS40501UW3T2G ONSEMI nss40501uw3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Case: WDFN3
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 40V
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
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BU406TU BU406TU ONSEMI BU406.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 7A; 60W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 7A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 10MHz
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MC14511BDG MC14511BDG ONSEMI mc14511b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 4
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 4
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
11+41.58 грн
14+31.30 грн
25+28.95 грн
48+27.53 грн
96+26.02 грн
Мінімальне замовлення: 11
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MC14511BDR2G MC14511BDR2G ONSEMI MC14511B-D.pdf Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
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MC14511BDWR2G ONSEMI MC14511B-D.pdf Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Kind of package: reel; tape
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2SK2394-6-TB-E 2SK2394-6-TB-E ONSEMI 2sk2394-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 3046 шт:
термін постачання 14-30 дні (днів)
9+56.04 грн
11+41.63 грн
12+35.75 грн
50+23.58 грн
100+19.97 грн
500+15.11 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MMBTA13 ONSEMI MMBTA13.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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SMMBTA13LT1G ONSEMI mmbta13lt1-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
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SMBJ15CA SMBJ15CA ONSEMI SMBJ5V0A.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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GBU4A GBU4A ONSEMI GBU4x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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HUF75339P3 HUF75339P3 ONSEMI HUF75339P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Kind of channel: enhancement
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
4+122.92 грн
5+90.64 грн
10+80.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NV24C04MUW3VLTBG ONSEMI NV24C04LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C04DTVLT3G ONSEMI NV24C04LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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CAT24C04WI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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CAV24C04WE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C04C4ATR ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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CAT24C04YI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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CAV24C04YE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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LM358M LM358M ONSEMI LM358A.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8; Ch: dual
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...85°C
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FDS8935 FDS8935 ONSEMI fds8935-d.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.1A
On-state resistance: 308mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of package: reel; tape
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1N4448 1N4448 ONSEMI 1n4448-f.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
на замовлення 1086 шт:
термін постачання 14-30 дні (днів)
72+6.33 грн
97+4.36 грн
186+2.26 грн
250+1.70 грн
500+1.39 грн
1000+1.17 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
1N4448TR 1N4448TR ONSEMI 1N91x_1N4x48.PDF Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
на замовлення 6341 шт:
термін постачання 14-30 дні (днів)
72+6.33 грн
129+3.27 грн
186+2.27 грн
217+1.94 грн
265+1.59 грн
500+1.36 грн
1000+1.17 грн
2000+1.02 грн
5000+0.87 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
1N4448WT 1N4448WT ONSEMI 1N4x48WT_1N914BWT.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD523F
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Leakage current: 5µA
на замовлення 3344 шт:
термін постачання 14-30 дні (днів)
63+7.23 грн
74+5.71 грн
82+5.12 грн
122+3.44 грн
500+2.57 грн
1000+2.27 грн
2000+2.01 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
UF4006 ONSEMI uf4007-d.pdf UF4001%20SERIES_P2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
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NTHD4508NT1G ONSEMI nthd4508n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 590mW
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMBTA06LT1G MMBTA06LT1G ONSEMI mmbta05.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 4771 шт:
термін постачання 14-30 дні (днів)
50+9.04 грн
71+5.96 грн
104+4.05 грн
125+3.37 грн
500+2.28 грн
1000+1.96 грн
1500+1.80 грн
3000+1.57 грн
Мінімальне замовлення: 50
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SMMBTA06LT1G SMMBTA06LT1G ONSEMI mmbta05lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 4166 шт:
термін постачання 14-30 дні (днів)
42+10.85 грн
60+7.05 грн
66+6.38 грн
85+4.99 грн
100+4.31 грн
500+4.20 грн
Мінімальне замовлення: 42
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NCP380HSN10AAT1G ONSEMI ncp380-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Mounting: SMD
Case: TSOP5
Number of channels: 1
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of output: P-Channel
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
On-state resistance: 135mΩ
Active logical level: high
Output current: 1A
Supply voltage: 2.5...5.5V DC
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NCP380LSN10AAT1G ONSEMI ncp380-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Mounting: SMD
Case: TSOP5
Number of channels: 1
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of output: P-Channel
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
On-state resistance: 135mΩ
Active logical level: low
Output current: 1A
Supply voltage: 2.5...5.5V DC
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NCP110AMX120TBG ONSEMI ncp110-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 200mA; XDFN4; SMD
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP110
Number of channels: 1
Input voltage: 1.1...5.5V
Output voltage: 1.2V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Protection: overheating OTP
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Voltage drop: 0.19V
Output current: 0.2A
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MC79L15ACPRAG MC79L15ACPRAG ONSEMI MC79L00A.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: reel; tape
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BC846BLT3G BC846BLT3G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 50000 шт:
термін постачання 14-30 дні (днів)
10000+0.83 грн
20000+0.75 грн
30000+0.73 грн
50000+0.70 грн
Мінімальне замовлення: 10000
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DTC144EET1G DTC144EET1G ONSEMI DTC144EET1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 47kΩ
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
на замовлення 860 шт:
термін постачання 14-30 дні (днів)
46+9.94 грн
72+5.87 грн
101+4.18 грн
117+3.60 грн
500+2.60 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
DTC144EM3T5G ONSEMI dtc144e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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SDTC144EET1G ONSEMI dtc144e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80...140
Quantity in set/package: 3000pcs.
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NSVDTC144EM3T5G ONSEMI dtc144e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80...140
Quantity in set/package: 8000pcs.
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DTC144TM3T5G ONSEMI dtc144t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 8000pcs.
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DTA115EET1G DTA115EET1G ONSEMI dta115e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
на замовлення 5985 шт:
термін постачання 14-30 дні (днів)
42+10.85 грн
70+6.04 грн
110+3.84 грн
500+2.85 грн
1000+2.51 грн
3000+2.09 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
DTA115EM3T5G ONSEMI dta115e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Quantity in set/package: 8000pcs.
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NSVDTA115EET1G ONSEMI dta115e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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MC79L15ACPG MC79L15ACPG ONSEMI MC79L00A.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: bulk
на замовлення 705 шт:
термін постачання 14-30 дні (днів)
27+17.17 грн
37+11.58 грн
38+11.33 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
MC79L15ABDR2G MC79L15ABDR2G ONSEMI MC79L00A.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; SO8; SMD; MC79L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: reel; tape
на замовлення 1877 шт:
термін постачання 14-30 дні (днів)
28+16.27 грн
33+12.92 грн
37+11.41 грн
44+9.74 грн
50+8.73 грн
100+8.14 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
MC79L15ABPG MC79L15ABPG ONSEMI MC79L00A.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: bulk
на замовлення 847 шт:
термін постачання 14-30 дні (днів)
24+18.98 грн
30+14.35 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
MC79L15ABPRPG MC79L15ABPRPG ONSEMI mc79l00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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MC79L15ACDR2G MC79L15ACDR2G ONSEMI MC79L00A.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; SO8; SMD; MC79L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: reel; tape
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MC79L15ACPREG MC79L15ACPREG ONSEMI MC79L00A.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: reel; tape
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MC79L15ACPRPG MC79L15ACPRPG ONSEMI mc79l00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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BZX79C12-T50A ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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MC100EP52DG MC100EP52DG ONSEMI MC100EP52DG.PDF Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; OUT: ECL; tube
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 3...5.5V DC
Case: SO8
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
1+591.10 грн
В кошику  од. на суму  грн.
MC100EP52DTG MC100EP52DTG ONSEMI mc10ep52-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; OUT: ECL; tube
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 3.3...5V DC
Case: TSSOP8
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
1+585.68 грн
10+512.79 грн
В кошику  од. на суму  грн.
FFSH3065B ONSEMI ffsh3065b-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 37A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 37A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Kind of package: tube
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FFSH3065B-F085 ONSEMI ffsh3065b-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 37A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 37A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Kind of package: tube
Application: automotive industry
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FFSH3065A ONSEMI ffsh3065a-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 36A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 36A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Kind of package: tube
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NCS2211DR2G ONSEMI ncs2211-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.7÷5.5VDC; Ch: 1; Amp.class: AB; 8Ω
Case: SO8-W
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Number of channels: 1
Output power: 1W
Supply voltage: 2.7...5.5V DC
Impedance:
Amplifier class: AB
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NCS2211MNTXG ONSEMI ncs2211-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.7÷5.5VDC; Ch: 1; Amp.class: AB; DFN8
Case: DFN8
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Operating temperature: -40...85°C
Number of channels: 1
Output power: 1W
Supply voltage: 2.7...5.5V DC
Impedance:
Amplifier class: AB
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2SA1552S-TL-E ONSEMI en2262-d.pdf ONSM-S-A0000136312-1.pdf?t.download=true&u=5oefqw Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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2SA1552S-TL-H ONSEMI en2262-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Current gain: 140...280
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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2SC4027S-TL-E ONSEMI en2262-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Frequency: 120MHz
Kind of package: reel; tape
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MBRS140T3G MBRS140T3G.PDF
MBRS140T3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
на замовлення 6673 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+19.88 грн
26+16.53 грн
50+13.51 грн
100+12.17 грн
250+10.24 грн
500+8.90 грн
1000+7.64 грн
2500+6.13 грн
5000+5.04 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
NSS40500UW3T2G nss40500uw3-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Case: WDFN3
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 40V
Application: automotive industry
Polarisation: bipolar
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NSS40501UW3T2G nss40501uw3-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Case: WDFN3
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 40V
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
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BU406TU BU406.pdf
BU406TU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 7A; 60W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 7A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 10MHz
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MC14511BDG mc14511b-d.pdf
MC14511BDG
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 4
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 4
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+41.58 грн
14+31.30 грн
25+28.95 грн
48+27.53 грн
96+26.02 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MC14511BDR2G MC14511B-D.pdf
MC14511BDR2G
Виробник: ONSEMI
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
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MC14511BDWR2G MC14511B-D.pdf
Виробник: ONSEMI
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Kind of package: reel; tape
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2SK2394-6-TB-E 2sk2394-d.pdf
2SK2394-6-TB-E
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 3046 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+56.04 грн
11+41.63 грн
12+35.75 грн
50+23.58 грн
100+19.97 грн
500+15.11 грн
Мінімальне замовлення: 9
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MMBTA13 MMBTA13.pdf
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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SMMBTA13LT1G mmbta13lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
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SMBJ15CA SMBJ5V0A.pdf
SMBJ15CA
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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GBU4A GBU4x.PDF
GBU4A
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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HUF75339P3 HUF75339P3.pdf
HUF75339P3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Kind of channel: enhancement
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+122.92 грн
5+90.64 грн
10+80.57 грн
Мінімальне замовлення: 4
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NV24C04MUW3VLTBG NV24C04LV-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C04DTVLT3G NV24C04LV-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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CAT24C04WI-GT3 CAT24C01-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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CAV24C04WE-GT3 CAV24C02-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C04C4ATR CAT24C01-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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CAT24C04YI-GT3 CAT24C01-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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CAV24C04YE-GT3 CAV24C02-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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LM358M LM358A.pdf
LM358M
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8; Ch: dual
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...85°C
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FDS8935 fds8935-d.pdf
FDS8935
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.1A
On-state resistance: 308mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of package: reel; tape
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1N4448 1n4448-f.pdf
1N4448
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
на замовлення 1086 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.33 грн
97+4.36 грн
186+2.26 грн
250+1.70 грн
500+1.39 грн
1000+1.17 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
1N4448TR 1N91x_1N4x48.PDF
1N4448TR
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
на замовлення 6341 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.33 грн
129+3.27 грн
186+2.27 грн
217+1.94 грн
265+1.59 грн
500+1.36 грн
1000+1.17 грн
2000+1.02 грн
5000+0.87 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
1N4448WT 1N4x48WT_1N914BWT.pdf
1N4448WT
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD523F
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Leakage current: 5µA
на замовлення 3344 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.23 грн
74+5.71 грн
82+5.12 грн
122+3.44 грн
500+2.57 грн
1000+2.27 грн
2000+2.01 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
UF4006 uf4007-d.pdf UF4001%20SERIES_P2104.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
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NTHD4508NT1G nthd4508n-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 590mW
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMBTA06LT1G mmbta05.pdf
MMBTA06LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 4771 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.04 грн
71+5.96 грн
104+4.05 грн
125+3.37 грн
500+2.28 грн
1000+1.96 грн
1500+1.80 грн
3000+1.57 грн
Мінімальне замовлення: 50
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SMMBTA06LT1G mmbta05lt1-d.pdf
SMMBTA06LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 4166 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.85 грн
60+7.05 грн
66+6.38 грн
85+4.99 грн
100+4.31 грн
500+4.20 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
NCP380HSN10AAT1G ncp380-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Mounting: SMD
Case: TSOP5
Number of channels: 1
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of output: P-Channel
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
On-state resistance: 135mΩ
Active logical level: high
Output current: 1A
Supply voltage: 2.5...5.5V DC
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NCP380LSN10AAT1G ncp380-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Mounting: SMD
Case: TSOP5
Number of channels: 1
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of output: P-Channel
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
On-state resistance: 135mΩ
Active logical level: low
Output current: 1A
Supply voltage: 2.5...5.5V DC
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NCP110AMX120TBG ncp110-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 200mA; XDFN4; SMD
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP110
Number of channels: 1
Input voltage: 1.1...5.5V
Output voltage: 1.2V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Protection: overheating OTP
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Voltage drop: 0.19V
Output current: 0.2A
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MC79L15ACPRAG MC79L00A.PDF
MC79L15ACPRAG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: reel; tape
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BC846BLT3G BC846ALT1G.PDF
BC846BLT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 50000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10000+0.83 грн
20000+0.75 грн
30000+0.73 грн
50000+0.70 грн
Мінімальне замовлення: 10000
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DTC144EET1G DTC144EET1G.PDF
DTC144EET1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 47kΩ
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
на замовлення 860 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+9.94 грн
72+5.87 грн
101+4.18 грн
117+3.60 грн
500+2.60 грн
Мінімальне замовлення: 46
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DTC144EM3T5G dtc144e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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SDTC144EET1G dtc144e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80...140
Quantity in set/package: 3000pcs.
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NSVDTC144EM3T5G dtc144e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80...140
Quantity in set/package: 8000pcs.
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DTC144TM3T5G dtc144t-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 8000pcs.
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DTA115EET1G dta115e-d.pdf
DTA115EET1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
на замовлення 5985 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.85 грн
70+6.04 грн
110+3.84 грн
500+2.85 грн
1000+2.51 грн
3000+2.09 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
DTA115EM3T5G dta115e-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Quantity in set/package: 8000pcs.
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NSVDTA115EET1G dta115e-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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MC79L15ACPG MC79L00A.PDF
MC79L15ACPG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: bulk
на замовлення 705 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
27+17.17 грн
37+11.58 грн
38+11.33 грн
Мінімальне замовлення: 27
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MC79L15ABDR2G MC79L00A.PDF
MC79L15ABDR2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; SO8; SMD; MC79L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: reel; tape
на замовлення 1877 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.27 грн
33+12.92 грн
37+11.41 грн
44+9.74 грн
50+8.73 грн
100+8.14 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
MC79L15ABPG MC79L00A.PDF
MC79L15ABPG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: bulk
на замовлення 847 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
24+18.98 грн
30+14.35 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
MC79L15ABPRPG mc79l00-d.pdf
MC79L15ABPRPG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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MC79L15ACDR2G MC79L00A.PDF
MC79L15ACDR2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; SO8; SMD; MC79L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: reel; tape
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MC79L15ACPREG MC79L00A.PDF
MC79L15ACPREG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: reel; tape
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MC79L15ACPRPG mc79l00-d.pdf
MC79L15ACPRPG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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BZX79C12-T50A BZX79C.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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MC100EP52DG MC100EP52DG.PDF
MC100EP52DG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; OUT: ECL; tube
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 3...5.5V DC
Case: SO8
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+591.10 грн
В кошику  од. на суму  грн.
MC100EP52DTG mc10ep52-d.pdf
MC100EP52DTG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; OUT: ECL; tube
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 3.3...5V DC
Case: TSSOP8
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+585.68 грн
10+512.79 грн
В кошику  од. на суму  грн.
FFSH3065B ffsh3065b-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 37A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 37A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Kind of package: tube
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FFSH3065B-F085 ffsh3065b-f085-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 37A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 37A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Kind of package: tube
Application: automotive industry
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FFSH3065A ffsh3065a-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 36A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 36A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Kind of package: tube
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NCS2211DR2G ncs2211-d.pdf
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.7÷5.5VDC; Ch: 1; Amp.class: AB; 8Ω
Case: SO8-W
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Number of channels: 1
Output power: 1W
Supply voltage: 2.7...5.5V DC
Impedance:
Amplifier class: AB
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NCS2211MNTXG ncs2211-d.pdf
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.7÷5.5VDC; Ch: 1; Amp.class: AB; DFN8
Case: DFN8
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Operating temperature: -40...85°C
Number of channels: 1
Output power: 1W
Supply voltage: 2.7...5.5V DC
Impedance:
Amplifier class: AB
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2SA1552S-TL-E en2262-d.pdf ONSM-S-A0000136312-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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2SA1552S-TL-H en2262-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Current gain: 140...280
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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2SC4027S-TL-E en2262-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Frequency: 120MHz
Kind of package: reel; tape
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