| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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NDT3055L | ONSEMI |
Description: ONSEMI - NDT3055L - Leistungs-MOSFET, n-Kanal, 60 V, 4 A, 0.1 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 3W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.1ohm |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NDT452AP | ONSEMI |
Description: ONSEMI - NDT452AP - Leistungs-MOSFET, p-Kanal, 30 V, 5 A, 0.065 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 3W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.065ohm |
на замовлення 29324 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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NDT3055L | ONSEMI |
Description: ONSEMI - NDT3055L - Leistungs-MOSFET, n-Kanal, 60 V, 4 A, 0.1 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 3W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.1ohm |
на замовлення 60215 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||||||
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NDT452AP | ONSEMI |
Description: ONSEMI - NDT452AP - Leistungs-MOSFET, p-Kanal, 30 V, 5 A, 0.065 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 3W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.065ohm |
на замовлення 29324 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||||||
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NDT456P | ONSEMI |
Description: ONSEMI - NDT456P - Leistungs-MOSFET, p-Kanal, 30 V, 7.3 A, 0.03 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 7.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.5V Verlustleistung: 3W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.03ohm |
на замовлення 34900 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMBT3904LT1G | ONSEMI |
Description: ONSEMI - MMBT3904LT1G - Bipolarer Einzeltransistor (BJT), Universal, NPN, 40 V, 200 mA, 225 mW, SOT-23, OberflächenmontagetariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 30hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt Verlustleistung: 225mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Dauerkollektorstrom: 200mA Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 40V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN usEccn: EAR99 Übergangsfrequenz: 300MHz Betriebstemperatur, max.: 150°C |
на замовлення 56000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BSS123L | ONSEMI |
Description: ONSEMI - BSS123L - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, OberflächenmontagetariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.405V Verlustleistung: 360mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 6ohm |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SS16HE | ONSEMI |
Description: ONSEMI - SS16HE - Schottky-Gleichrichterdiode, 60 V, 1 A, Einfach, SOD-323HE, 2 Pin(s), 680 mVtariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 25A euEccn: NLR rohsCompliant: Y-EX Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 isCanonical: Y Durchlassspannung, max.: 680mV Durchschnittlicher Durchlassstrom: 1A SVHC: Lead (25-Jun-2025) Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Periodische Spitzensperrspannung: 60V Betriebstemperatur, max.: 150°C |
на замовлення 1882 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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SS16HE | ONSEMI |
Description: ONSEMI - SS16HE - Schottky-Gleichrichterdiode, 60 V, 1 A, Einfach, SOD-323HE, 2 Pin(s), 680 mVtariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 25A euEccn: NLR rohsCompliant: Y-EX Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 isCanonical: N Durchlassspannung, max.: 680mV Durchschnittlicher Durchlassstrom: 1A SVHC: Lead (25-Jun-2025) Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Periodische Spitzensperrspannung: 60V Betriebstemperatur, max.: 150°C |
на замовлення 1882 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||||||
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FCA20N60F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 60A Gate charge: 98nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCB20N60FTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 695 шт: термін постачання 14-30 дні (днів) |
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FCB20N60TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 98nC |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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FCP20N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
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UC3843BD1G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Operating voltage: 7.6...36V Power: 702mW |
на замовлення 865 шт: термін постачання 14-30 дні (днів) |
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UC3843BD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Operating voltage: 7.6...36V Power: 702mW |
на замовлення 1547 шт: термін постачання 14-30 дні (днів) |
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UC3843BDR2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Operating voltage: 7.6...36V Power: 862mW |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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UC3843BNG | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Operating voltage: 7.6...36V Power: 1.25W |
на замовлення 263 шт: термін постачання 14-30 дні (днів) |
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UC3843BVD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Operating voltage: 7.6...36V Power: 702mW |
на замовлення 1933 шт: термін постачання 14-30 дні (днів) |
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UC3843BVDR2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Operating voltage: 7.6...36V Power: 862mW |
на замовлення 1301 шт: термін постачання 14-30 дні (днів) |
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MC74HC573ADTG | ONSEMI |
Category: LatchesDescription: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Operating temperature: -55...125°C Technology: CMOS Kind of package: tube Case: TSSOP20 Family: HC Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC573ADTR2G | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Family: HC Kind of output: 3-state; non-inverting Trigger: level-triggered Manufacturer series: HC |
на замовлення 2490 шт: термін постачання 14-30 дні (днів) |
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MC74HC573ADWG | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state; non-inverting Operating temperature: -40...85°C Technology: CMOS Trigger: level-triggered Case: SO20-W Family: HC Kind of integrated circuit: D latch Number of channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC573ADWR2G | ONSEMI |
Category: LatchesDescription: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Operating temperature: -55...125°C Technology: CMOS Kind of package: reel; tape Family: HC Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM74HC573MTC | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Trigger: level-triggered Case: TSSOP20 Family: HC Kind of integrated circuit: D latch Number of channels: 8 |
на замовлення 182 шт: термін постачання 14-30 дні (днів) |
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MM74HC573MTCX | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Trigger: level-triggered Quiescent current: 160µA Kind of package: reel; tape Case: TSSOP20 Family: HC Kind of integrated circuit: D latch Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC573WM | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Trigger: level-triggered Quiescent current: 80µA Case: SO20 Family: HC Kind of integrated circuit: D latch Number of channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC573WMX | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Trigger: level-triggered Case: SO20 Family: HC Kind of integrated circuit: D latch Number of channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS16DXV6T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: double independent Capacitance: 2pF Case: SOT563 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.5W Kind of package: reel; tape |
на замовлення 2355 шт: термін постачання 14-30 дні (днів) |
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BAS16HT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.5A; 6ns; SOD323; Ufmax: 1V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.5A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1V Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 19676 шт: термін постачання 14-30 дні (днів) |
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| FCH077N65F-F085 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCH077N65F-F155 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Pulsed drain current: 162A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LM311DR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8 Type of integrated circuit: comparator Number of comparators: 1 Case: SO8 Operating voltage: 5...30V Kind of comparator: universal Mounting: SMT Delay time: 200ns |
на замовлення 223 шт: термін постачання 14-30 дні (днів) |
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FDP18N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
на замовлення 945 шт: термін постачання 14-30 дні (днів) |
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FDPF18N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDPF18N50T | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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BC817-40LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 39108 шт: термін постачання 14-30 дні (днів) |
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BC817-40LT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 9950 шт: термін постачання 14-30 дні (днів) |
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BC857ALT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC548BTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Formed Current gain: 200...450 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
на замовлення 876 шт: термін постачання 14-30 дні (днів) |
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BC548CTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Formed Current gain: 420...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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6N137M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Insulation voltage: 5kV Transfer rate: 1Mbps Case: DIP8 Turn-on time: 30ns Turn-off time: 10ns Supply voltage: 4.5...5.5V DC Manufacturer series: 6N137M CTR@If: 19-50%@16mA Slew rate: 2.5kV/μs |
на замовлення 1560 шт: термін постачання 14-30 дні (днів) |
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6N137SDM | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps; 7V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 10ns Output voltage: 7V Manufacturer series: 6N137M CTR@If: 19-50%@16mA Slew rate: 10kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS14HE | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 450 шт: термін постачання 14-30 дні (днів) |
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NRVBSS14HE | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry |
на замовлення 1514 шт: термін постачання 14-30 дні (днів) |
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2N5551BU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 80...250 Mounting: THT Kind of package: bulk Frequency: 100MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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2N5551TA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 811 шт: термін постачання 14-30 дні (днів) |
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2N5551TF | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: reel; tape Frequency: 100MHz |
на замовлення 354 шт: термін постачання 14-30 дні (днів) |
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2N5551TFR | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1238 шт: термін постачання 14-30 дні (днів) |
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RFP50N06 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 131W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
на замовлення 40 шт: термін постачання 14-30 дні (днів) |
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SS36FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 2624 шт: термін постачання 14-30 дні (днів) |
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NRVBSS36FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TIP41CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Case: TO220AB Current gain: 15...75 Mounting: THT Frequency: 3MHz Power dissipation: 65W Kind of package: tube |
на замовлення 394 шт: термін постачання 14-30 дні (днів) |
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TIP31AG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
на замовлення 242 шт: термін постачання 14-30 дні (днів) |
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TIP31BG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
на замовлення 178 шт: термін постачання 14-30 дні (днів) |
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TIP31CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
на замовлення 110 шт: термін постачання 14-30 дні (днів) |
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TIP31G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MB6S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 582 шт: термін постачання 14-30 дні (днів) |
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FDS8858CZ | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of package: reel; tape Mounting: SMD Power dissipation: 2W Gate charge: 46/24nC Polarisation: unipolar Technology: PowerTrench® Drain current: 8.6/-7.3A Kind of channel: enhancement Drain-source voltage: 30/-30V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±25/±20V Case: SO8 On-state resistance: 28.8/24.3mΩ |
на замовлення 1795 шт: термін постачання 14-30 дні (днів) |
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LM321SN3T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 900kHz; Ch: 1; ±1.5÷16VDC,3÷32VDC; 9mV Operating temperature: -40...85°C Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape Case: TSOP5 Number of channels: single; 1 Bandwidth: 0.9MHz Mounting: SMT Input offset voltage: 9mV Slew rate: 0.4V/μs Type of integrated circuit: operational amplifier |
на замовлення 3165 шт: термін постачання 14-30 дні (днів) |
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NCP1200D60R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; SMPS Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Frequency: 52...70kHz Operating voltage: 9.8...11.4V DC Topology: flyback Output current: 0.25A Type of integrated circuit: PMIC Operating temperature: -25...125°C Application: SMPS Kind of integrated circuit: AC/DC switcher; PWM controller |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| NDT3055L |
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Виробник: ONSEMI
Description: ONSEMI - NDT3055L - Leistungs-MOSFET, n-Kanal, 60 V, 4 A, 0.1 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 3W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.1ohm
Description: ONSEMI - NDT3055L - Leistungs-MOSFET, n-Kanal, 60 V, 4 A, 0.1 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 3W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.1ohm
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| NDT452AP |
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Виробник: ONSEMI
Description: ONSEMI - NDT452AP - Leistungs-MOSFET, p-Kanal, 30 V, 5 A, 0.065 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 3W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.065ohm
Description: ONSEMI - NDT452AP - Leistungs-MOSFET, p-Kanal, 30 V, 5 A, 0.065 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 3W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.065ohm
на замовлення 29324 шт:
термін постачання 21-31 дні (днів)
| NDT3055L |
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Виробник: ONSEMI
Description: ONSEMI - NDT3055L - Leistungs-MOSFET, n-Kanal, 60 V, 4 A, 0.1 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 3W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.1ohm
Description: ONSEMI - NDT3055L - Leistungs-MOSFET, n-Kanal, 60 V, 4 A, 0.1 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 3W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.1ohm
на замовлення 60215 шт:
термін постачання 21-31 дні (днів)
| NDT452AP |
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Виробник: ONSEMI
Description: ONSEMI - NDT452AP - Leistungs-MOSFET, p-Kanal, 30 V, 5 A, 0.065 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 3W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.065ohm
Description: ONSEMI - NDT452AP - Leistungs-MOSFET, p-Kanal, 30 V, 5 A, 0.065 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 3W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.065ohm
на замовлення 29324 шт:
термін постачання 21-31 дні (днів)
| NDT456P |
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Виробник: ONSEMI
Description: ONSEMI - NDT456P - Leistungs-MOSFET, p-Kanal, 30 V, 7.3 A, 0.03 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 7.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 3W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.03ohm
Description: ONSEMI - NDT456P - Leistungs-MOSFET, p-Kanal, 30 V, 7.3 A, 0.03 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 7.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 3W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.03ohm
на замовлення 34900 шт:
термін постачання 21-31 дні (днів)
| MMBT3904LT1G |
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Виробник: ONSEMI
Description: ONSEMI - MMBT3904LT1G - Bipolarer Einzeltransistor (BJT), Universal, NPN, 40 V, 200 mA, 225 mW, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 30hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Verlustleistung: 225mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Dauerkollektorstrom: 200mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 40V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
usEccn: EAR99
Übergangsfrequenz: 300MHz
Betriebstemperatur, max.: 150°C
Description: ONSEMI - MMBT3904LT1G - Bipolarer Einzeltransistor (BJT), Universal, NPN, 40 V, 200 mA, 225 mW, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 30hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Verlustleistung: 225mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Dauerkollektorstrom: 200mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 40V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
usEccn: EAR99
Übergangsfrequenz: 300MHz
Betriebstemperatur, max.: 150°C
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)
| BSS123L |
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Виробник: ONSEMI
Description: ONSEMI - BSS123L - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.405V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 6ohm
Description: ONSEMI - BSS123L - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.405V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 6ohm
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| SS16HE |
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Виробник: ONSEMI
Description: ONSEMI - SS16HE - Schottky-Gleichrichterdiode, 60 V, 1 A, Einfach, SOD-323HE, 2 Pin(s), 680 mV
tariffCode: 85411000
Bauform - Diode: SOD-323HE
Durchlassstoßstrom: 25A
euEccn: NLR
rohsCompliant: Y-EX
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
isCanonical: Y
Durchlassspannung, max.: 680mV
Durchschnittlicher Durchlassstrom: 1A
SVHC: Lead (25-Jun-2025)
Anzahl der Pins: 2Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 60V
Betriebstemperatur, max.: 150°C
Description: ONSEMI - SS16HE - Schottky-Gleichrichterdiode, 60 V, 1 A, Einfach, SOD-323HE, 2 Pin(s), 680 mV
tariffCode: 85411000
Bauform - Diode: SOD-323HE
Durchlassstoßstrom: 25A
euEccn: NLR
rohsCompliant: Y-EX
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
isCanonical: Y
Durchlassspannung, max.: 680mV
Durchschnittlicher Durchlassstrom: 1A
SVHC: Lead (25-Jun-2025)
Anzahl der Pins: 2Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 60V
Betriebstemperatur, max.: 150°C
на замовлення 1882 шт:
термін постачання 21-31 дні (днів)
| SS16HE |
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Виробник: ONSEMI
Description: ONSEMI - SS16HE - Schottky-Gleichrichterdiode, 60 V, 1 A, Einfach, SOD-323HE, 2 Pin(s), 680 mV
tariffCode: 85411000
Bauform - Diode: SOD-323HE
Durchlassstoßstrom: 25A
euEccn: NLR
rohsCompliant: Y-EX
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
isCanonical: N
Durchlassspannung, max.: 680mV
Durchschnittlicher Durchlassstrom: 1A
SVHC: Lead (25-Jun-2025)
Anzahl der Pins: 2Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 60V
Betriebstemperatur, max.: 150°C
Description: ONSEMI - SS16HE - Schottky-Gleichrichterdiode, 60 V, 1 A, Einfach, SOD-323HE, 2 Pin(s), 680 mV
tariffCode: 85411000
Bauform - Diode: SOD-323HE
Durchlassstoßstrom: 25A
euEccn: NLR
rohsCompliant: Y-EX
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
isCanonical: N
Durchlassspannung, max.: 680mV
Durchschnittlicher Durchlassstrom: 1A
SVHC: Lead (25-Jun-2025)
Anzahl der Pins: 2Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 60V
Betriebstemperatur, max.: 150°C
на замовлення 1882 шт:
термін постачання 21-31 дні (днів)
| FCA20N60F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 98nC
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В кошику
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| FCB20N60FTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 695 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 383.01 грн |
| 3+ | 315.77 грн |
| 10+ | 264.25 грн |
| 25+ | 228.52 грн |
| 50+ | 206.91 грн |
| 100+ | 193.62 грн |
| FCB20N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| FCP20N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 417.91 грн |
| 3+ | 333.22 грн |
| 10+ | 259.26 грн |
| 50+ | 245.13 грн |
| UC3843BD1G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 702mW
на замовлення 865 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.85 грн |
| 12+ | 37.39 грн |
| 15+ | 28.42 грн |
| 25+ | 24.26 грн |
| 50+ | 21.85 грн |
| 98+ | 20.03 грн |
| 196+ | 19.20 грн |
| UC3843BD1R2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 702mW
на замовлення 1547 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.48 грн |
| 17+ | 25.84 грн |
| 25+ | 23.60 грн |
| 100+ | 21.19 грн |
| 250+ | 19.94 грн |
| 500+ | 19.28 грн |
| UC3843BDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 862mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 862mW
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| UC3843BNG |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 1.25W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 1.25W
на замовлення 263 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.80 грн |
| 10+ | 50.52 грн |
| 25+ | 45.79 грн |
| 50+ | 42.63 грн |
| 100+ | 39.72 грн |
| 250+ | 36.23 грн |
| UC3843BVD1R2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 702mW
на замовлення 1933 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.74 грн |
| 14+ | 30.25 грн |
| 25+ | 25.93 грн |
| 100+ | 22.85 грн |
| UC3843BVDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 862mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 862mW
на замовлення 1301 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.96 грн |
| 11+ | 39.14 грн |
| 25+ | 34.73 грн |
| 100+ | 26.18 грн |
| 250+ | 23.93 грн |
| MC74HC573ADTG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: TSSOP20
Family: HC
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: TSSOP20
Family: HC
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
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| MC74HC573ADTR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: HC
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Manufacturer series: HC
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: HC
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Manufacturer series: HC
на замовлення 2490 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.64 грн |
| 15+ | 29.58 грн |
| 25+ | 26.59 грн |
| 100+ | 23.27 грн |
| 250+ | 21.61 грн |
| 500+ | 20.52 грн |
| 1000+ | 19.69 грн |
| MC74HC573ADWG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state; non-inverting
Operating temperature: -40...85°C
Technology: CMOS
Trigger: level-triggered
Case: SO20-W
Family: HC
Kind of integrated circuit: D latch
Number of channels: 8
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state; non-inverting
Operating temperature: -40...85°C
Technology: CMOS
Trigger: level-triggered
Case: SO20-W
Family: HC
Kind of integrated circuit: D latch
Number of channels: 8
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| MC74HC573ADWR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: reel; tape
Family: HC
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: reel; tape
Family: HC
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
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| MM74HC573MTC |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Trigger: level-triggered
Case: TSSOP20
Family: HC
Kind of integrated circuit: D latch
Number of channels: 8
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Trigger: level-triggered
Case: TSSOP20
Family: HC
Kind of integrated circuit: D latch
Number of channels: 8
на замовлення 182 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 461.76 грн |
| 10+ | 332.39 грн |
| 25+ | 285.85 грн |
| 75+ | 255.94 грн |
| MM74HC573MTCX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Trigger: level-triggered
Quiescent current: 160µA
Kind of package: reel; tape
Case: TSSOP20
Family: HC
Kind of integrated circuit: D latch
Number of channels: 8
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Trigger: level-triggered
Quiescent current: 160µA
Kind of package: reel; tape
Case: TSSOP20
Family: HC
Kind of integrated circuit: D latch
Number of channels: 8
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Мінімальне замовлення: 2500 шт
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| MM74HC573WM |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Trigger: level-triggered
Quiescent current: 80µA
Case: SO20
Family: HC
Kind of integrated circuit: D latch
Number of channels: 8
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Trigger: level-triggered
Quiescent current: 80µA
Case: SO20
Family: HC
Kind of integrated circuit: D latch
Number of channels: 8
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| MM74HC573WMX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Trigger: level-triggered
Case: SO20
Family: HC
Kind of integrated circuit: D latch
Number of channels: 8
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Trigger: level-triggered
Case: SO20
Family: HC
Kind of integrated circuit: D latch
Number of channels: 8
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| BAS16DXV6T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double independent
Capacitance: 2pF
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double independent
Capacitance: 2pF
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.5W
Kind of package: reel; tape
на замовлення 2355 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.42 грн |
| 43+ | 9.81 грн |
| 49+ | 8.64 грн |
| 59+ | 7.11 грн |
| 100+ | 5.43 грн |
| 250+ | 4.67 грн |
| 500+ | 4.35 грн |
| BAS16HT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; 6ns; SOD323; Ufmax: 1V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; 6ns; SOD323; Ufmax: 1V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 19676 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.58 грн |
| 162+ | 2.58 грн |
| 214+ | 1.94 грн |
| 237+ | 1.75 грн |
| 268+ | 1.55 грн |
| 500+ | 1.39 грн |
| 1000+ | 1.27 грн |
| 3000+ | 1.05 грн |
| 6000+ | 0.91 грн |
| FCH077N65F-F085 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
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| FCH077N65F-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
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| LM311DR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Type of integrated circuit: comparator
Number of comparators: 1
Case: SO8
Operating voltage: 5...30V
Kind of comparator: universal
Mounting: SMT
Delay time: 200ns
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Type of integrated circuit: comparator
Number of comparators: 1
Case: SO8
Operating voltage: 5...30V
Kind of comparator: universal
Mounting: SMT
Delay time: 200ns
на замовлення 223 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.37 грн |
| 25+ | 17.28 грн |
| 27+ | 15.46 грн |
| 32+ | 13.38 грн |
| 100+ | 12.88 грн |
| FDP18N50 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 945 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.09 грн |
| 3+ | 209.40 грн |
| 10+ | 172.84 грн |
| 50+ | 124.64 грн |
| FDPF18N50 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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| FDPF18N50T |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 268.47 грн |
| 10+ | 185.31 грн |
| BC817-40LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 39108 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.26 грн |
| 91+ | 4.57 грн |
| 124+ | 3.36 грн |
| 140+ | 2.98 грн |
| 200+ | 2.73 грн |
| 500+ | 2.41 грн |
| 1000+ | 2.14 грн |
| 1500+ | 1.99 грн |
| 3000+ | 1.79 грн |
| BC817-40LT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 9950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.95 грн |
| 68+ | 6.15 грн |
| 97+ | 4.29 грн |
| 117+ | 3.57 грн |
| 500+ | 2.34 грн |
| 1000+ | 2.01 грн |
| 2000+ | 1.78 грн |
| 5000+ | 1.54 грн |
| BC857ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| BC548BTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
на замовлення 876 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.00 грн |
| 40+ | 10.55 грн |
| 55+ | 7.58 грн |
| 100+ | 6.54 грн |
| 200+ | 5.62 грн |
| 500+ | 4.62 грн |
| BC548CTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
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| 6N137M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Supply voltage: 4.5...5.5V DC
Manufacturer series: 6N137M
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Supply voltage: 4.5...5.5V DC
Manufacturer series: 6N137M
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
на замовлення 1560 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.06 грн |
| 10+ | 43.21 грн |
| 13+ | 34.49 грн |
| 25+ | 26.42 грн |
| 6N137SDM |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps; 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Output voltage: 7V
Manufacturer series: 6N137M
CTR@If: 19-50%@16mA
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps; 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Output voltage: 7V
Manufacturer series: 6N137M
CTR@If: 19-50%@16mA
Slew rate: 10kV/μs
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| SS14HE |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 450 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.69 грн |
| 17+ | 25.26 грн |
| 20+ | 21.02 грн |
| 100+ | 11.47 грн |
| NRVBSS14HE |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
на замовлення 1514 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.85 грн |
| 20+ | 21.77 грн |
| 100+ | 16.12 грн |
| 500+ | 11.72 грн |
| 2N5551BU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 80...250
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 80...250
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 2N5551TA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 811 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.90 грн |
| 32+ | 13.13 грн |
| 37+ | 11.38 грн |
| 53+ | 7.88 грн |
| 100+ | 6.73 грн |
| 500+ | 4.74 грн |
| 2N5551TF |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 354 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.90 грн |
| 41+ | 10.30 грн |
| 100+ | 6.52 грн |
| 200+ | 5.68 грн |
| 2N5551TFR |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1238 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.00 грн |
| 34+ | 12.38 грн |
| 100+ | 6.83 грн |
| 500+ | 4.45 грн |
| 1000+ | 3.79 грн |
| RFP50N06 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.17 грн |
| 10+ | 105.53 грн |
| SS36FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2624 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.01 грн |
| 13+ | 32.91 грн |
| 16+ | 27.67 грн |
| 100+ | 16.87 грн |
| 500+ | 14.21 грн |
| NRVBSS36FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| TIP41CG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
на замовлення 394 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 109.18 грн |
| 10+ | 49.03 грн |
| 50+ | 43.13 грн |
| 100+ | 41.80 грн |
| TIP31AG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
на замовлення 242 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.75 грн |
| 50+ | 30.50 грн |
| 100+ | 29.00 грн |
| TIP31BG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
на замовлення 178 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.75 грн |
| 12+ | 35.23 грн |
| 25+ | 31.41 грн |
| 50+ | 28.92 грн |
| 100+ | 28.59 грн |
| TIP31CG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.54 грн |
| 11+ | 38.89 грн |
| 50+ | 26.09 грн |
| 100+ | 22.44 грн |
| TIP31G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| MB6S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 582 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.22 грн |
| 14+ | 31.41 грн |
| 25+ | 24.93 грн |
| 50+ | 20.94 грн |
| 100+ | 17.70 грн |
| 250+ | 14.62 грн |
| 500+ | 12.96 грн |
| FDS8858CZ |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 2W
Gate charge: 46/24nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 8.6/-7.3A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±25/±20V
Case: SO8
On-state resistance: 28.8/24.3mΩ
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 2W
Gate charge: 46/24nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 8.6/-7.3A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±25/±20V
Case: SO8
On-state resistance: 28.8/24.3mΩ
на замовлення 1795 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.02 грн |
| 6+ | 74.79 грн |
| 10+ | 63.90 грн |
| 50+ | 42.96 грн |
| 100+ | 36.89 грн |
| 500+ | 32.57 грн |
| LM321SN3T1G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 900kHz; Ch: 1; ±1.5÷16VDC,3÷32VDC; 9mV
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Case: TSOP5
Number of channels: single; 1
Bandwidth: 0.9MHz
Mounting: SMT
Input offset voltage: 9mV
Slew rate: 0.4V/μs
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 900kHz; Ch: 1; ±1.5÷16VDC,3÷32VDC; 9mV
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Case: TSOP5
Number of channels: single; 1
Bandwidth: 0.9MHz
Mounting: SMT
Input offset voltage: 9mV
Slew rate: 0.4V/μs
Type of integrated circuit: operational amplifier
на замовлення 3165 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.42 грн |
| 41+ | 10.30 грн |
| 46+ | 9.14 грн |
| 54+ | 7.81 грн |
| 100+ | 6.40 грн |
| 250+ | 5.73 грн |
| 500+ | 5.48 грн |
| 1000+ | 5.15 грн |
| 3000+ | 4.90 грн |
| NCP1200D60R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; SMPS
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Frequency: 52...70kHz
Operating voltage: 9.8...11.4V DC
Topology: flyback
Output current: 0.25A
Type of integrated circuit: PMIC
Operating temperature: -25...125°C
Application: SMPS
Kind of integrated circuit: AC/DC switcher; PWM controller
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; SMPS
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Frequency: 52...70kHz
Operating voltage: 9.8...11.4V DC
Topology: flyback
Output current: 0.25A
Type of integrated circuit: PMIC
Operating temperature: -25...125°C
Application: SMPS
Kind of integrated circuit: AC/DC switcher; PWM controller
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.






































