| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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CNY17F2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs Manufacturer series: CNY17 Max. off-state voltage: 6V |
на замовлення 862 шт: термін постачання 14-30 дні (днів) |
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| NCV7809BD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 9V; 1A; D2PAK; SMD; reel,tape Kind of package: reel; tape Mounting: SMD Case: D2PAK Kind of voltage regulator: fixed; linear Output current: 1A Number of channels: 1 Output voltage: 9V Type of integrated circuit: voltage regulator Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAT54A | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.29W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N4148-T50R | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: DO35 Reverse recovery time: 4ns |
на замовлення 8340 шт: термін постачання 14-30 дні (днів) |
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H11L1M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Case: DIP6 Transfer rate: 1Mbps Turn-on time: 650ns Turn-off time: 1.2µs Slew rate: 5.3kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT3906 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FCH125N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247 Polarisation: unipolar Gate charge: 75nC On-state resistance: 0.102Ω Drain current: 18A Gate-source voltage: ±20V Power dissipation: 278W Pulsed drain current: 87A Case: TO247 Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCP125N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3 Polarisation: unipolar Gate charge: 75nC On-state resistance: 0.125Ω Drain current: 29A Gate-source voltage: ±20V Power dissipation: 278W Pulsed drain current: 87A Case: TO220-3 Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTP125N60S5H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3 Polarisation: unipolar Gate charge: 37.3nC On-state resistance: 0.125Ω Drain current: 22A Gate-source voltage: ±30V Power dissipation: 152W Pulsed drain current: 77A Case: TO220-3 Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SBAS16XV2T5G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
на замовлення 10664 шт: термін постачання 14-30 дні (днів) |
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SBAS16XV2T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
на замовлення 2050 шт: термін постачання 14-30 дні (днів) |
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| BAT54 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Power dissipation: 0.29W Max. forward impulse current: 0.6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LL4148 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: SOD80 Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape |
на замовлення 4519 шт: термін постачання 14-30 дні (днів) |
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BC547B | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Frequency: 300MHz |
на замовлення 9202 шт: термін постачання 14-30 дні (днів) |
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BZX84C75LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 75V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 41993 шт: термін постачання 14-30 дні (днів) |
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MMSD103T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW Mounting: SMD Capacitance: 5pF Reverse recovery time: 50ns Leakage current: 0.1mA Load current: 0.2A Power dissipation: 0.4W Max. forward voltage: 1.25V Max. off-state voltage: 250V Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Type of diode: switching |
на замовлення 880 шт: термін постачання 14-30 дні (днів) |
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SS34 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W Mounting: SMD Power dissipation: 2.27W Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.5V |
на замовлення 1029 шт: термін постачання 14-30 дні (днів) |
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NL17SZ74USG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: US8 Operating temperature: -40...85°C Supply voltage: 2...6V DC Trigger: positive-edge-triggered Manufacturer series: 7SZ |
на замовлення 2093 шт: термін постачання 14-30 дні (днів) |
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MMBTA05LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 6020 шт: термін постачання 14-30 дні (днів) |
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2N4403BU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.35W Case: TO92 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4740A-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 10V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SS16T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.72V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 452 шт: термін постачання 14-30 дні (днів) |
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FDA59N30 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 35A Pulsed drain current: 236A Power dissipation: 500W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 56mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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FQP8N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 45nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FGY120T65SPD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 120A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 120A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 378A Mounting: THT Gate charge: 162nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AFGY120T65SPD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 120A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 120A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 125nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TIP29AG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 84 шт: термін постачання 14-30 дні (днів) |
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TIP29CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 218 шт: термін постачання 14-30 дні (днів) |
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TIP29BG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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SBCP56-16T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBTA56WT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 545 шт: термін постачання 14-30 дні (днів) |
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SMMBTA56LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
на замовлення 353 шт: термін постачання 14-30 дні (днів) |
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| SMMBTA56LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMMBTA56WT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMMBTA56WT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBTA56 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD243C | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB5100 | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 380pF Kind of package: reel; tape Power dissipation: 5W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJL3281AG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 260V; 15A; 200W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 260V Collector current: 15A Power dissipation: 200W Case: TO264 Mounting: THT Kind of package: tube Frequency: 30MHz |
на замовлення 185 шт: термін постачання 14-30 дні (днів) |
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MJL1302AG | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264 Polarisation: bipolar Case: TO264 Mounting: THT Type of transistor: PNP Power dissipation: 200W Collector current: 15A Collector-emitter voltage: 260V Frequency: 30MHz Kind of package: tube |
на замовлення 184 шт: термін постачання 14-30 дні (днів) |
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BD682G | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 4A; 40W; TO225 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 40W Case: TO225 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC848BLT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SPZT2222AT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...300 Mounting: SMD Kind of package: tape Frequency: 300MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HC10ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Family: HC Kind of package: reel; tape Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF06S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 1314 шт: термін постачання 14-30 дні (днів) |
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1N5341BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.2V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 2188 шт: термін постачання 14-30 дні (днів) |
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BAV74LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA Type of diode: switching Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 50V Kind of package: reel; tape Load current: 0.2A Max. forward impulse current: 0.5A Power dissipation: 0.3W Max. forward voltage: 1V Capacitance: 2pF Reverse recovery time: 4ns |
на замовлення 1495 шт: термін постачання 14-30 дні (днів) |
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H11AA1M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Collector-emitter voltage: 100V Case: DIP6 CTR@If: 20%@10mA |
на замовлення 487 шт: термін постачання 14-30 дні (днів) |
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BC857BLT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BDX53CG | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 8A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 66 шт: термін постачання 14-30 дні (днів) |
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MOC3023M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Trigger current: 5mA Mounting: THT Manufacturer series: MOC302XM Output voltage: 400V |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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FDD8447L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 50A; 44W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 44W Case: DPAK Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 392 шт: термін постачання 14-30 дні (днів) |
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1N5346BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 9.1V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 5917 шт: термін постачання 14-30 дні (днів) |
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MJD45H11T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 90MHz |
на замовлення 1341 шт: термін постачання 14-30 дні (днів) |
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MJD45H11G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 90MHz |
на замовлення 1035 шт: термін постачання 14-30 дні (днів) |
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| MJD45H11RLG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJD45H11-1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 90MHz |
на замовлення 225 шт: термін постачання 14-30 дні (днів) |
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| NJVMJD45H11G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJD45H11RLG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJD45H11T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| CNY17F2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Manufacturer series: CNY17
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Manufacturer series: CNY17
Max. off-state voltage: 6V
на замовлення 862 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.47 грн |
| 18+ | 24.22 грн |
| 50+ | 20.71 грн |
| 100+ | 19.29 грн |
| 500+ | 15.95 грн |
| NCV7809BD2TR4G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Output current: 1A
Number of channels: 1
Output voltage: 9V
Type of integrated circuit: voltage regulator
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Output current: 1A
Number of channels: 1
Output voltage: 9V
Type of integrated circuit: voltage regulator
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BAT54A |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
товару немає в наявності
В кошику
од. на суму грн.
| 1N4148-T50R |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: DO35
Reverse recovery time: 4ns
на замовлення 8340 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 148+ | 3.06 грн |
| 250+ | 1.67 грн |
| 348+ | 1.20 грн |
| 500+ | 1.01 грн |
| 1000+ | 0.92 грн |
| 2500+ | 0.84 грн |
| H11L1M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Transfer rate: 1Mbps
Turn-on time: 650ns
Turn-off time: 1.2µs
Slew rate: 5.3kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Transfer rate: 1Mbps
Turn-on time: 650ns
Turn-off time: 1.2µs
Slew rate: 5.3kV/μs
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3906 |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| FCH125N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.102Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO247
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.102Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO247
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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В кошику
од. на суму грн.
| FCP125N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.125Ω
Drain current: 29A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.125Ω
Drain current: 29A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| NTP125N60S5H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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В кошику
од. на суму грн.
| SBAS16XV2T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
на замовлення 10664 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.31 грн |
| 50+ | 9.27 грн |
| 100+ | 7.85 грн |
| 500+ | 7.10 грн |
| 8000+ | 6.26 грн |
| SBAS16XV2T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
на замовлення 2050 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.50 грн |
| 129+ | 3.26 грн |
| 201+ | 2.08 грн |
| 500+ | 1.63 грн |
| 1000+ | 1.47 грн |
| BAT54 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.29W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.29W
Max. forward impulse current: 0.6A
товару немає в наявності
В кошику
од. на суму грн.
| LL4148 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
на замовлення 4519 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 109+ | 3.84 грн |
| 122+ | 3.42 грн |
| 161+ | 2.61 грн |
| 182+ | 2.30 грн |
| 500+ | 1.64 грн |
| 1000+ | 1.39 грн |
| 2500+ | 1.06 грн |
| BC547B |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
на замовлення 9202 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.49 грн |
| 41+ | 10.19 грн |
| 46+ | 9.10 грн |
| 55+ | 7.60 грн |
| 100+ | 6.85 грн |
| 500+ | 5.51 грн |
| 1000+ | 5.35 грн |
| BZX84C75LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 41993 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 97+ | 4.34 грн |
| 120+ | 3.51 грн |
| 209+ | 2.00 грн |
| 258+ | 1.62 грн |
| 500+ | 1.19 грн |
| 1000+ | 1.18 грн |
| MMSD103T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW
Mounting: SMD
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW
Mounting: SMD
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: switching
на замовлення 880 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.50 грн |
| 102+ | 4.13 грн |
| 250+ | 3.65 грн |
| 500+ | 3.07 грн |
| SS34 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.5V
на замовлення 1029 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.17 грн |
| 15+ | 28.31 грн |
| 50+ | 23.13 грн |
| 100+ | 21.21 грн |
| 250+ | 18.96 грн |
| 500+ | 18.46 грн |
| NL17SZ74USG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
на замовлення 2093 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.49 грн |
| 45+ | 9.35 грн |
| 52+ | 8.10 грн |
| 100+ | 7.85 грн |
| MMBTA05LT1G | ![]() |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 6020 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.49 грн |
| 48+ | 8.77 грн |
| 74+ | 5.71 грн |
| 100+ | 4.69 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.71 грн |
| 1500+ | 2.53 грн |
| 3000+ | 2.29 грн |
| 2N4403BU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: TO92
Mounting: THT
Kind of package: bulk
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| 1N4740A-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| SS16T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 452 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.99 грн |
| 58+ | 7.27 грн |
| 65+ | 6.51 грн |
| 100+ | 6.35 грн |
| FDA59N30 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 38 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 332.78 грн |
| 5+ | 252.22 грн |
| 10+ | 217.98 грн |
| 30+ | 182.90 грн |
| FQP8N80C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 45nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 45nC
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| FGY120T65SPD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 378A
Mounting: THT
Gate charge: 162nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 378A
Mounting: THT
Gate charge: 162nC
Kind of package: tube
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| AFGY120T65SPD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
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| TIP29AG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 84 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 98.04 грн |
| 10+ | 56.88 грн |
| 50+ | 42.84 грн |
| TIP29CG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 218 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.24 грн |
| 10+ | 41.84 грн |
| TIP29BG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 44 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 98.94 грн |
| 13+ | 34.74 грн |
| SBCP56-16T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
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| MMBTA56WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 545 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.79 грн |
| 59+ | 7.10 грн |
| 106+ | 3.98 грн |
| 500+ | 2.71 грн |
| SMMBTA56LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 353 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.38 грн |
| 26+ | 16.54 грн |
| 33+ | 12.90 грн |
| 50+ | 10.37 грн |
| 100+ | 8.28 грн |
| SMMBTA56LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| SMMBTA56WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| SMMBTA56WT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| MMBTA56 |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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| BD243C |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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| SB5100 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
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| MJL3281AG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 260V; 15A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 260V; 15A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 185 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 354.37 грн |
| 25+ | 197.10 грн |
| MJL1302AG |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Polarisation: bipolar
Case: TO264
Mounting: THT
Type of transistor: PNP
Power dissipation: 200W
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Polarisation: bipolar
Case: TO264
Mounting: THT
Type of transistor: PNP
Power dissipation: 200W
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Kind of package: tube
на замовлення 184 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 372.36 грн |
| 25+ | 261.41 грн |
| BD682G |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
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| BC848BLT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| SPZT2222AT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Application: automotive industry
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| MC74HC10ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
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| DF06S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1314 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.57 грн |
| 16+ | 27.39 грн |
| 50+ | 22.47 грн |
| 100+ | 20.80 грн |
| 200+ | 19.46 грн |
| 1N5341BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 2188 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.98 грн |
| 20+ | 21.38 грн |
| 22+ | 19.63 грн |
| 100+ | 14.28 грн |
| 250+ | 12.36 грн |
| BAV74LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 50V
Kind of package: reel; tape
Load current: 0.2A
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Max. forward voltage: 1V
Capacitance: 2pF
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 50V
Kind of package: reel; tape
Load current: 0.2A
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Max. forward voltage: 1V
Capacitance: 2pF
Reverse recovery time: 4ns
на замовлення 1495 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 117+ | 3.59 грн |
| 159+ | 2.64 грн |
| 183+ | 2.29 грн |
| 250+ | 1.87 грн |
| 500+ | 1.60 грн |
| 1000+ | 1.35 грн |
| H11AA1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 100V
Case: DIP6
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 100V
Case: DIP6
CTR@If: 20%@10mA
на замовлення 487 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.27 грн |
| 16+ | 27.81 грн |
| 25+ | 24.89 грн |
| 50+ | 22.80 грн |
| 100+ | 20.71 грн |
| 250+ | 20.29 грн |
| BC857BLT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| BDX53CG |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 66 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.65 грн |
| 11+ | 40.67 грн |
| 50+ | 34.33 грн |
| MOC3023M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC302XM
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC302XM
Output voltage: 400V
на замовлення 90 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.17 грн |
| 17+ | 25.47 грн |
| 30+ | 21.63 грн |
| FDD8447L | ![]() |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 392 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.45 грн |
| 8+ | 58.46 грн |
| 10+ | 50.70 грн |
| 50+ | 34.74 грн |
| 100+ | 29.82 грн |
| 1N5346BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 5917 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.88 грн |
| 18+ | 23.55 грн |
| 20+ | 21.05 грн |
| 100+ | 13.61 грн |
| MJD45H11T4G | ![]() |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 90MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 90MHz
на замовлення 1341 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.15 грн |
| 10+ | 46.60 грн |
| 20+ | 39.59 грн |
| 50+ | 32.24 грн |
| 100+ | 28.15 грн |
| 200+ | 25.06 грн |
| 500+ | 22.05 грн |
| 1000+ | 20.46 грн |
| MJD45H11G | ![]() |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
на замовлення 1035 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 89.04 грн |
| 10+ | 68.48 грн |
| 25+ | 51.78 грн |
| 75+ | 45.93 грн |
| MJD45H11RLG |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
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| MJD45H11-1G | ![]() |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
на замовлення 225 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.56 грн |
| 10+ | 51.78 грн |
| 25+ | 46.52 грн |
| 75+ | 43.10 грн |
| 150+ | 41.09 грн |
| NJVMJD45H11G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
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од. на суму грн.
| NJVMJD45H11RLG |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NJVMJD45H11T4G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.






























