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MMBF4391LT1G MMBF4391LT1G ONSEMI mmbf4391lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
на замовлення 1277 шт:
термін постачання 21-30 дні (днів)
19+22.78 грн
25+16.71 грн
50+14.02 грн
100+11.50 грн
111+8.12 грн
304+7.66 грн
500+7.59 грн
1000+7.36 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
FDMS86300DC FDMS86300DC ONSEMI fdms86300dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86200DC FDMS86200DC ONSEMI fdms86200dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS3669S ONSEMI fdms3669s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7620S ONSEMI fdms7620s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS9600S ONSEMI fdms9600s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhancement
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SMMBT3906LT1G ONSEMI mmbt3906lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906LT3G ONSEMI mmbt3906lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906WT1G ONSEMI mmbt3904wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT4403LT1G ONSEMI mmbt4403lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NTJS3157NT1G NTJS3157NT1G ONSEMI ntjs3157n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
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NLAS3157MX3TCG ONSEMI Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
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NLASB3157MTR2G ONSEMI nlasb3157-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 10µA
Kind of output: SPDT
Technology: CMOS
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NRVBSS24NT3G ONSEMI ss24-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
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SBC847BDW1T1G SBC847BDW1T1G ONSEMI BC84xXDW1Tx.PDF Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2094 шт:
термін постачання 21-30 дні (днів)
22+18.98 грн
32+12.34 грн
37+10.50 грн
75+8.58 грн
100+8.12 грн
154+5.82 грн
424+5.52 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SMMBT5401LT1G ONSEMI mmbt5401lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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LL4148 LL4148 ONSEMI LL4148.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Kind of package: reel; tape
Mounting: SMD
Case: SOD80
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.5A
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Power dissipation: 0.5W
Type of diode: switching
на замовлення 1448 шт:
термін постачання 21-30 дні (днів)
56+7.43 грн
81+4.75 грн
93+4.14 грн
149+2.57 грн
500+1.82 грн
946+0.95 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
FL7701MX FL7701MX ONSEMI FL7701-DTE.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8; 250mA
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Integrated circuit features: digitally implemented active power factor correction function; linear dimming
Mounting: SMD
Maximum output current: 0.25A
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
5+85.83 грн
6+70.50 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DFB2040 ONSEMI DFB20xx.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.4kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
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MC74AC273DWG MC74AC273DWG ONSEMI mc74ac273-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 80µA
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
4+127.92 грн
10+66.06 грн
21+43.22 грн
57+40.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJE15029G MJE15029G ONSEMI MJE15031G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
4+114.95 грн
10+101.16 грн
11+87.36 грн
29+82.76 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDP52N20 FDP52N20 ONSEMI FDP52N20, FDPF52N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Drain-source voltage: 200V
Drain current: 33A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 357W
Polarisation: unipolar
Kind of package: tube
Gate charge: 63nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
на замовлення 136 шт:
термін постачання 21-30 дні (днів)
3+165.88 грн
10+101.16 грн
25+95.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBPC3510 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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FDMQ8203 ONSEMI FDMQ8203.PDF Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Gate charge: 19/5nC
Semiconductor structure: common drain
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FDMQ86530L ONSEMI fdmq86530l-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Gate charge: 33nC
Pulsed drain current: 50A
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SMMBFJ310LT1G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ309LT1G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ310LT3G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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FDMQ8403 ONSEMI fdmq8403-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Case: WDFN12
Drain-source voltage: 100V
Drain current: 6A
On-state resistance: 191mΩ
Type of transistor: N-MOSFET x4
Power dissipation: 17W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Mounting: SMD
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TIP29AG TIP29AG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
4+106.46 грн
Мінімальне замовлення: 4
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1SS400T1G 1SS400T1G ONSEMI 1ss400t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523F
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.2W
Capacitance: 3pF
на замовлення 4779 шт:
термін постачання 21-30 дні (днів)
50+8.25 грн
70+5.52 грн
99+3.91 грн
115+3.35 грн
473+1.90 грн
1299+1.79 грн
3000+1.75 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
LM2575T-3.3G LM2575T-3.3G ONSEMI LM2575-ON-DTE.PDF Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 4.75...40V DC
Frequency: 42...63kHz
Kind of integrated circuit: DC/DC converter
Topology: buck
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
2+246.76 грн
8+122.61 грн
21+115.72 грн
Мінімальне замовлення: 2
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74VHC02M 74VHC02M ONSEMI FAIRS25986-1.pdf?t.download=true&u=5oefqw ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: tube
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74VHC02MTCX 74VHC02MTCX ONSEMI ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
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74VHC02MX 74VHC02MX ONSEMI ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw FAIRS25986-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
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DAN222M3T5G DAN222M3T5G ONSEMI DAN222M3.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW
Power dissipation: 0.26W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 80V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: common cathode; double
Reverse recovery time: 4ns
Leakage current: 0.1mA
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
на замовлення 6351 шт:
термін постачання 21-30 дні (днів)
32+13.20 грн
45+8.58 грн
56+6.90 грн
102+3.79 грн
349+2.63 грн
500+2.40 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SMMBT4401LT1G ONSEMI mmbt4401lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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MC74ACT32DG MC74ACT32DG ONSEMI 74AC32SC.pdf MC74AC32DG.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Number of inputs: 2
Kind of gate: OR
на замовлення 380 шт:
термін постачання 21-30 дні (днів)
5+86.65 грн
12+33.64 грн
25+27.36 грн
45+20.00 грн
124+18.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MC74ACT273DWG MC74ACT273DWG ONSEMI mc74ac273-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Manufacturer series: ACT
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
4+127.92 грн
10+73.49 грн
24+37.86 грн
66+35.79 грн
Мінімальне замовлення: 4
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SMMBT2222ALT1G ONSEMI mmbt2222lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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SMMBT2222ALT3G ONSEMI mmbt2222lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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SMMBT2222AWT1G ONSEMI mmbt2222awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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74ACT14MTC 74ACT14MTC ONSEMI ONSM-S-A0003584689-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: TSSOP14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
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74ACT14SC 74ACT14SC ONSEMI ONSM-S-A0003584689-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
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74ACT14SCX 74ACT14SCX ONSEMI 74AC14-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Quiescent current: 40µA
Type of integrated circuit: digital
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SMMBT5551LT1G ONSEMI mmbt5550lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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SMMBT5551LT3G ONSEMI mmbt5550lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FQP45N15V2 FQP45N15V2 ONSEMI FQP45N15V2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Drain-source voltage: 150V
Drain current: 31A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 220W
Polarisation: unipolar
Kind of package: tube
Gate charge: 94nC
Technology: QFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
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MPSA56G MPSA56G ONSEMI MPSA56G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
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74ACT08MTCX 74ACT08MTCX ONSEMI ONSM-S-A0003669475-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: AND
Family: ACT
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Number of inputs: 2
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74ACT08SCX 74ACT08SCX ONSEMI 74ACT08-D.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Kind of package: reel; tape
Kind of gate: AND
Family: ACT
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
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MC74ACT08DG MC74ACT08DG ONSEMI mc74ac08-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 40µA
Kind of package: tube
Kind of gate: AND
Family: ACT
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
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MC74ACT08DTR2G MC74ACT08DTR2G ONSEMI MC74AC08DG.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MC7905BTG MC7905BTG ONSEMI MC7900-D.PDF description Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -5V
Output current: 1A
Case: TO220AB
Mounting: THT
Manufacturer series: MC7900
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
на замовлення 850 шт:
термін постачання 21-30 дні (днів)
6+80.88 грн
10+44.14 грн
25+33.64 грн
45+20.08 грн
123+19.01 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SPZT2222AT1G ONSEMI pzt2222at1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Application: automotive industry
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MJE243G MJE243G ONSEMI MJE253G.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Frequency: 40MHz
Kind of package: bulk
на замовлення 253 шт:
термін постачання 21-30 дні (днів)
7+63.55 грн
10+42.15 грн
36+26.13 грн
97+24.68 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2SC3647S-TD-E 2SC3647S-TD-E ONSEMI 2sa1417-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Current gain: 140...280
на замовлення 821 шт:
термін постачання 21-30 дні (днів)
8+56.94 грн
11+35.56 грн
47+19.39 грн
128+18.32 грн
500+18.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BD239CTU BD239CTU ONSEMI BD239x.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
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MC74LCX574DTG MC74LCX574DTG ONSEMI MC74LCX574-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; LCX; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...3.6V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
11+39.04 грн
12+33.41 грн
25+30.27 грн
30+29.84 грн
75+28.20 грн
300+27.51 грн
Мінімальне замовлення: 11
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MC74LCX574DWR2G MC74LCX574DWR2G ONSEMI MC74LCX574-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; LCX; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: LCX
Mounting: SMD
Case: SO20-W
Supply voltage: 2...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
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MMBF4391LT1G mmbf4391lt1-d.pdf
MMBF4391LT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
на замовлення 1277 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+22.78 грн
25+16.71 грн
50+14.02 грн
100+11.50 грн
111+8.12 грн
304+7.66 грн
500+7.59 грн
1000+7.36 грн
Мінімальне замовлення: 19
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FDMS86300DC fdms86300dc-d.pdf
FDMS86300DC
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86200DC fdms86200dc-d.pdf
FDMS86200DC
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS3669S fdms3669s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7620S fdms7620s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS9600S fdms9600s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhancement
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SMMBT3906LT1G mmbt3906lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906LT3G mmbt3906lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906WT1G mmbt3904wt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT4403LT1G mmbt4403lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NTJS3157NT1G ntjs3157n-d.pdf
NTJS3157NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
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NLAS3157MX3TCG
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
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NLASB3157MTR2G nlasb3157-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 10µA
Kind of output: SPDT
Technology: CMOS
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NRVBSS24NT3G ss24-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
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SBC847BDW1T1G BC84xXDW1Tx.PDF
SBC847BDW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2094 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+18.98 грн
32+12.34 грн
37+10.50 грн
75+8.58 грн
100+8.12 грн
154+5.82 грн
424+5.52 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SMMBT5401LT1G mmbt5401lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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LL4148 LL4148.pdf
LL4148
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Kind of package: reel; tape
Mounting: SMD
Case: SOD80
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.5A
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Power dissipation: 0.5W
Type of diode: switching
на замовлення 1448 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.43 грн
81+4.75 грн
93+4.14 грн
149+2.57 грн
500+1.82 грн
946+0.95 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
FL7701MX FL7701-DTE.pdf
FL7701MX
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO8; 250mA
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Integrated circuit features: digitally implemented active power factor correction function; linear dimming
Mounting: SMD
Maximum output current: 0.25A
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+85.83 грн
6+70.50 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DFB2040 DFB20xx.pdf
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.4kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
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MC74AC273DWG mc74ac273-d.pdf
MC74AC273DWG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 80µA
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+127.92 грн
10+66.06 грн
21+43.22 грн
57+40.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJE15029G MJE15031G.PDF
MJE15029G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+114.95 грн
10+101.16 грн
11+87.36 грн
29+82.76 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDP52N20 FDP52N20, FDPF52N20T.pdf
FDP52N20
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Drain-source voltage: 200V
Drain current: 33A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 357W
Polarisation: unipolar
Kind of package: tube
Gate charge: 63nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
на замовлення 136 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+165.88 грн
10+101.16 грн
25+95.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBPC3510 GBPCxx.PDF
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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FDMQ8203 FDMQ8203.PDF
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Gate charge: 19/5nC
Semiconductor structure: common drain
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FDMQ86530L fdmq86530l-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Gate charge: 33nC
Pulsed drain current: 50A
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SMMBFJ310LT1G mmbfj309lt1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ309LT1G mmbfj309lt1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ310LT3G mmbfj309lt1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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FDMQ8403 fdmq8403-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Case: WDFN12
Drain-source voltage: 100V
Drain current: 6A
On-state resistance: 191mΩ
Type of transistor: N-MOSFET x4
Power dissipation: 17W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Mounting: SMD
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TIP29AG TIP29A-C_TIP30A-C.pdf
TIP29AG
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+106.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1SS400T1G 1ss400t1-d.pdf
1SS400T1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523F
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.2W
Capacitance: 3pF
на замовлення 4779 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.25 грн
70+5.52 грн
99+3.91 грн
115+3.35 грн
473+1.90 грн
1299+1.79 грн
3000+1.75 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
LM2575T-3.3G LM2575-ON-DTE.PDF
LM2575T-3.3G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 4.75...40V DC
Frequency: 42...63kHz
Kind of integrated circuit: DC/DC converter
Topology: buck
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+246.76 грн
8+122.61 грн
21+115.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
74VHC02M FAIRS25986-1.pdf?t.download=true&u=5oefqw ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw
74VHC02M
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: tube
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74VHC02MTCX ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw
74VHC02MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
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74VHC02MX ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw FAIRS25986-1.pdf?t.download=true&u=5oefqw
74VHC02MX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
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DAN222M3T5G DAN222M3.PDF
DAN222M3T5G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW
Power dissipation: 0.26W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 80V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: common cathode; double
Reverse recovery time: 4ns
Leakage current: 0.1mA
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
на замовлення 6351 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.20 грн
45+8.58 грн
56+6.90 грн
102+3.79 грн
349+2.63 грн
500+2.40 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SMMBT4401LT1G mmbt4401lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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MC74ACT32DG 74AC32SC.pdf MC74AC32DG.pdf
MC74ACT32DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Number of inputs: 2
Kind of gate: OR
на замовлення 380 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+86.65 грн
12+33.64 грн
25+27.36 грн
45+20.00 грн
124+18.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MC74ACT273DWG mc74ac273-d.pdf
MC74ACT273DWG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Manufacturer series: ACT
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+127.92 грн
10+73.49 грн
24+37.86 грн
66+35.79 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SMMBT2222ALT1G mmbt2222lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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SMMBT2222ALT3G mmbt2222lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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SMMBT2222AWT1G mmbt2222awt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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74ACT14MTC ONSM-S-A0003584689-1.pdf?t.download=true&u=5oefqw
74ACT14MTC
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: TSSOP14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
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74ACT14SC ONSM-S-A0003584689-1.pdf?t.download=true&u=5oefqw
74ACT14SC
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
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74ACT14SCX 74AC14-D.PDF
74ACT14SCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Quiescent current: 40µA
Type of integrated circuit: digital
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SMMBT5551LT1G mmbt5550lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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SMMBT5551LT3G mmbt5550lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FQP45N15V2 FQP45N15V2.pdf
FQP45N15V2
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Drain-source voltage: 150V
Drain current: 31A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 220W
Polarisation: unipolar
Kind of package: tube
Gate charge: 94nC
Technology: QFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
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MPSA56G MPSA56G.PDF
MPSA56G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
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74ACT08MTCX ONSM-S-A0003669475-1.pdf?t.download=true&u=5oefqw
74ACT08MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: AND
Family: ACT
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Number of inputs: 2
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74ACT08SCX 74ACT08-D.PDF
74ACT08SCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Kind of package: reel; tape
Kind of gate: AND
Family: ACT
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
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MC74ACT08DG mc74ac08-d.pdf
MC74ACT08DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 40µA
Kind of package: tube
Kind of gate: AND
Family: ACT
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
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MC74ACT08DTR2G MC74AC08DG.PDF
MC74ACT08DTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MC7905BTG description MC7900-D.PDF
MC7905BTG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -5V
Output current: 1A
Case: TO220AB
Mounting: THT
Manufacturer series: MC7900
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
на замовлення 850 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+80.88 грн
10+44.14 грн
25+33.64 грн
45+20.08 грн
123+19.01 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SPZT2222AT1G pzt2222at1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Application: automotive industry
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MJE243G MJE253G.pdf
MJE243G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Frequency: 40MHz
Kind of package: bulk
на замовлення 253 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.55 грн
10+42.15 грн
36+26.13 грн
97+24.68 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2SC3647S-TD-E 2sa1417-d.pdf
2SC3647S-TD-E
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Current gain: 140...280
на замовлення 821 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.94 грн
11+35.56 грн
47+19.39 грн
128+18.32 грн
500+18.24 грн
Мінімальне замовлення: 8
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BD239CTU BD239x.pdf
BD239CTU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
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MC74LCX574DTG MC74LCX574-D.pdf
MC74LCX574DTG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; LCX; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...3.6V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.04 грн
12+33.41 грн
25+30.27 грн
30+29.84 грн
75+28.20 грн
300+27.51 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MC74LCX574DWR2G MC74LCX574-D.pdf
MC74LCX574DWR2G
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; LCX; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: LCX
Mounting: SMD
Case: SO20-W
Supply voltage: 2...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
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