| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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1SMA5942BT3G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 51V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 51V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMA5928BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 13V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMA5943BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 56V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMA5939BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 39V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMA5934BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 24V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMA5941BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 47V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD3055-094T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 45A Power dissipation: 48W Case: DPAK Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 10.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2089 шт: термін постачання 14-30 дні (днів) |
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FQA140N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 99A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 560A Gate charge: 285nC |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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| NVMFS040N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Pulsed drain current: 94A Power dissipation: 18W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| FDBL0240N100 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 210A Pulsed drain current: 910A Power dissipation: 300W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 79nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| NVTFS040N10MCLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Pulsed drain current: 82A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5250BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 20V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
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В кошику од. на суму грн. | |||||||||||||||||
| NTHL060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 33A Case: TO247-3 Gate-source voltage: -5...18V Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 88W Gate charge: 74nC Technology: SiC On-state resistance: 49mΩ Pulsed drain current: 143A |
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В кошику од. на суму грн. | |||||||||||||||||
| NVBG060N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: D2PAK-7 Gate-source voltage: -5...18V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 85W Gate charge: 74nC Technology: SiC Features of semiconductor devices: Kelvin terminal On-state resistance: 50mΩ Pulsed drain current: 130A |
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В кошику од. на суму грн. | |||||||||||||||||
| NTH4L060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: TO247-4 Gate-source voltage: -8...22V Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 88W Gate charge: 74nC Technology: SiC Features of semiconductor devices: Kelvin terminal On-state resistance: 50mΩ Pulsed drain current: 152A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVH4L060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: TO247-4 Gate-source voltage: -5...18V Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 88W Gate charge: 74nC Technology: SiC Features of semiconductor devices: Kelvin terminal On-state resistance: 50mΩ Pulsed drain current: 152A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDD4141 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -10.8A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2443 шт: термін постачання 14-30 дні (днів) |
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| NTMFS4D0N08XT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 119A; Idm: 469A; 107W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 119A Pulsed drain current: 469A Power dissipation: 107W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
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LM285D-2.5G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Maximum output current: 20mA |
на замовлення 235 шт: термін постачання 14-30 дні (днів) |
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MUN2212T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
| SMUN2212T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSVMUN2212T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP303150MNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: PQFN39 Output current: 50A Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NCP3335ADM250R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; Micro8; SMD Operating temperature: -40...85°C Manufacturer series: NCP3335A Output voltage: 2.5V Case: Micro8 Number of channels: 2 Tolerance: ±1.5% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 2.6...12V Output current: 0.5A Type of integrated circuit: voltage regulator Voltage drop: 0.34V |
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В кошику од. на суму грн. | |||||||||||||||||
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MC14551BDG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO16; 3÷18VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: SO16 Supply voltage: 3...18V DC Mounting: SMD Operating temperature: -55...125°C Number of channels: 4 |
на замовлення 73 шт: термін постачання 14-30 дні (днів) |
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| NVHL060N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 32A Pulsed drain current: 184A Power dissipation: 110W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 135mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FSB70250 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; LGA; 3.3A; MOSFET; Uoper: 500V; Usup: 300V; Uinsul: 1.5kV Operating temperature: -40...150°C Insulation voltage: 1.5kV Case: LGA Operating voltage: 500V Mounting: SMD Supply voltage: 300V Output current: 3.3A Type of integrated circuit: driver DC supply current: 1.7mA Power dissipation: 81W Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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MMSZ4710T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 25V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 25V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ4xxTxG |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5684G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 50A Power dissipation: 300W Case: TO3; TO204 Current gain: 15...60 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5686G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 50A Power dissipation: 300W Case: TO3; TO204 Current gain: 15...60 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX85C12 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 12V; DO41; single diode; bulk; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Kind of package: bulk |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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FOD2711A | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA Mounting: THT Number of channels: 1 CTR@If: 100-200%@10mA Kind of output: transistor Insulation voltage: 5kV Type of optocoupler: optocoupler Case: DIP8 |
на замовлення 787 шт: термін постачання 14-30 дні (днів) |
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FOD2711ASDV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA Mounting: SMD Number of channels: 1 CTR@If: 100-200%@10mA Kind of output: transistor Insulation voltage: 5kV Type of optocoupler: optocoupler Case: SO8 |
на замовлення 237 шт: термін постачання 14-30 дні (днів) |
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| FOD2711ASD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SMD8; 50mA; PIN: 8 Mounting: SMD Number of channels: 1 Collector current: 50mA Number of pins: 8 Kind of output: transistor Insulation voltage: 5kV Type of optocoupler: optocoupler Case: SMD8 |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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| NSBA114EDP6T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 269mW Case: SOT963 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 8000pcs. Current gain: 35...60 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBA114EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 4000pcs. Current gain: 35...60 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSVBA114EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 4000pcs. Application: automotive industry Current gain: 35...60 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CPH6337-TL-W | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 12V; 3.5A; 1.6W; SOT23-6 Mounting: SMD Power dissipation: 1.6W Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 12V Type of transistor: P-MOSFET Gate-source voltage: 10V Case: SOT23-6 On-state resistance: 54mΩ |
на замовлення 2639 шт: термін постачання 14-30 дні (днів) |
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| MM5Z4717T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5Z4xxxTxG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZMM5Z4717T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5Z4xxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX79C2V7 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Mounting: THT Tolerance: ±5% Case: CASE017AG Kind of package: bulk Semiconductor structure: single diode Manufacturer series: BZX79C |
на замовлення 2235 шт: термін постачання 14-30 дні (днів) |
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| GBPC15005 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBPC15005W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDN357N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3 Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-3 On-state resistance: 0.14Ω Power dissipation: 0.5W Gate charge: 5.9nC Polarisation: unipolar Technology: PowerTrench® Features of semiconductor devices: logic level Drain current: 1.9A Kind of channel: enhancement Drain-source voltage: 30V |
на замовлення 1051 шт: термін постачання 14-30 дні (днів) |
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FDA16N50-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: UniFET™ |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
| FDA16N50LDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.3A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: DMOS; UniFET™ |
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В кошику од. на суму грн. | |||||||||||||||||
| SZESD8551MXWT5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5÷8.3V; bidirectional; X2DFN2; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5.5...8.3V Semiconductor structure: bidirectional Case: X2DFN2 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
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 |
FOD420V | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD420; tube Type of optocoupler: optotriac Insulation voltage: 5kV Output voltage: 600V Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 2mA Mounting: THT Number of channels: 1 Manufacturer series: FOD420 Kind of package: tube Turn-on time: 60µs Turn-off time: 52µs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
 |
NTD20N06T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2477 шт: термін постачання 14-30 дні (днів) |
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NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTTFS020N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| NVTFS020N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFWS020N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
|
NTDV20P06LT4G-VF01 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.5A Pulsed drain current: 50A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 143mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTMFS3D6N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 131A; Idm: 1674A; 136W; DFN5 Mounting: SMD Kind of package: reel; tape Case: DFN5 On-state resistance: 3.6mΩ Pulsed drain current: 1674A Power dissipation: 136W Gate charge: 60nC Polarisation: unipolar Drain current: 131A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| 50A02CH-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.7W; CPH3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.7W Case: CPH3 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 690MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV7041D3G050R2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 100kHz; Ch: 1; 3÷5.5VDC; SO8; 50V/V Type of integrated circuit: instrumentation amplifier Bandwidth: 100kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 3...5.5V DC Case: SO8 Operating temperature: -40...150°C Slew rate: 1V/μs Gain: 50V/V Input offset voltage: 0.4mV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZNUP4114HMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 5.5V Kind of package: reel; tape Semiconductor structure: unidirectional Case: TSOP6 Type of diode: TVS array Number of channels: 4 Breakdown voltage: 6.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
HUF75542P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 75A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 150nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
 |
MUN5212DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. Current gain: 60...100 |
товару немає в наявності |
В кошику од. на суму грн. |
| 1SMA5942BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 51V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 51V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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| 1SMA5928BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
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од. на суму грн.
| 1SMA5943BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 56V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 56V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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од. на суму грн.
| 1SMA5939BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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| 1SMA5934BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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| 1SMA5941BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 47V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 47V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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В кошику
од. на суму грн.
| NTD3055-094T4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2089 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.75 грн |
| 10+ | 58.04 грн |
| 20+ | 49.58 грн |
| 50+ | 40.38 грн |
| 100+ | 35.07 грн |
| 200+ | 30.93 грн |
| 500+ | 26.95 грн |
| 1000+ | 24.62 грн |
| FQA140N10 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 560A
Gate charge: 285nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 560A
Gate charge: 285nC
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 524.13 грн |
| 10+ | 399.64 грн |
| NVMFS040N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 94A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 94A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| FDBL0240N100 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NVTFS040N10MCLTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 82A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 82A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| 1N5250BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| NTHL060N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 33A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 88W
Gate charge: 74nC
Technology: SiC
On-state resistance: 49mΩ
Pulsed drain current: 143A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 33A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 88W
Gate charge: 74nC
Technology: SiC
On-state resistance: 49mΩ
Pulsed drain current: 143A
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| NVBG060N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 85W
Gate charge: 74nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
On-state resistance: 50mΩ
Pulsed drain current: 130A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 85W
Gate charge: 74nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
On-state resistance: 50mΩ
Pulsed drain current: 130A
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| NTH4L060N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -8...22V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 88W
Gate charge: 74nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
On-state resistance: 50mΩ
Pulsed drain current: 152A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -8...22V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 88W
Gate charge: 74nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
On-state resistance: 50mΩ
Pulsed drain current: 152A
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| NVH4L060N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 88W
Gate charge: 74nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
On-state resistance: 50mΩ
Pulsed drain current: 152A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 88W
Gate charge: 74nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
On-state resistance: 50mΩ
Pulsed drain current: 152A
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| FDD4141 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2443 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 101.79 грн |
| 6+ | 72.80 грн |
| 10+ | 63.76 грн |
| 50+ | 46.93 грн |
| 100+ | 41.29 грн |
| 250+ | 35.15 грн |
| 500+ | 32.42 грн |
| NTMFS4D0N08XT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 119A; Idm: 469A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 119A
Pulsed drain current: 469A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 119A; Idm: 469A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 119A
Pulsed drain current: 469A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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| LM285D-2.5G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Maximum output current: 20mA
на замовлення 235 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.75 грн |
| 15+ | 28.85 грн |
| 20+ | 28.19 грн |
| MUN2212T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
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Мінімальне замовлення: 3000 шт
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| SMUN2212T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
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| NSVMUN2212T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
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| NCP303150MNTWG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN39
Output current: 50A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN39
Output current: 50A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
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Мінімальне замовлення: 3000 шт
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| NCP3335ADM250R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; Micro8; SMD
Operating temperature: -40...85°C
Manufacturer series: NCP3335A
Output voltage: 2.5V
Case: Micro8
Number of channels: 2
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.6...12V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.34V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; Micro8; SMD
Operating temperature: -40...85°C
Manufacturer series: NCP3335A
Output voltage: 2.5V
Case: Micro8
Number of channels: 2
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.6...12V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.34V
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| MC14551BDG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 4
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 4
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.18 грн |
| NVHL060N090SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 32A
Pulsed drain current: 184A
Power dissipation: 110W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 32A
Pulsed drain current: 184A
Power dissipation: 110W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
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| FSB70250 |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; LGA; 3.3A; MOSFET; Uoper: 500V; Usup: 300V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Insulation voltage: 1.5kV
Case: LGA
Operating voltage: 500V
Mounting: SMD
Supply voltage: 300V
Output current: 3.3A
Type of integrated circuit: driver
DC supply current: 1.7mA
Power dissipation: 81W
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; LGA; 3.3A; MOSFET; Uoper: 500V; Usup: 300V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Insulation voltage: 1.5kV
Case: LGA
Operating voltage: 500V
Mounting: SMD
Supply voltage: 300V
Output current: 3.3A
Type of integrated circuit: driver
DC supply current: 1.7mA
Power dissipation: 81W
Integrated circuit features: MOSFET
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Мінімальне замовлення: 1000 шт
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| MMSZ4710T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 25V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 25V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 25V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 25V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
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| 2N5684G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
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| 2N5686G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
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| BZX85C12 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
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Мінімальне замовлення: 10 шт
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| FOD2711A |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: THT
Number of channels: 1
CTR@If: 100-200%@10mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: DIP8
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: THT
Number of channels: 1
CTR@If: 100-200%@10mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: DIP8
на замовлення 787 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.47 грн |
| 17+ | 25.87 грн |
| 25+ | 24.87 грн |
| 100+ | 22.39 грн |
| 250+ | 21.89 грн |
| 500+ | 20.98 грн |
| FOD2711ASDV |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: SMD
Number of channels: 1
CTR@If: 100-200%@10mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: SO8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: SMD
Number of channels: 1
CTR@If: 100-200%@10mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: SO8
на замовлення 237 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.50 грн |
| 18+ | 23.71 грн |
| 25+ | 22.88 грн |
| 100+ | 22.05 грн |
| FOD2711ASD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SMD8; 50mA; PIN: 8
Mounting: SMD
Number of channels: 1
Collector current: 50mA
Number of pins: 8
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: SMD8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SMD8; 50mA; PIN: 8
Mounting: SMD
Number of channels: 1
Collector current: 50mA
Number of pins: 8
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: SMD8
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 51.79 грн |
| NSBA114EDP6T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Current gain: 35...60
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| NSBA114EDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 4000pcs.
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 4000pcs.
Current gain: 35...60
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| NSVBA114EDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 4000pcs.
Application: automotive industry
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 4000pcs.
Application: automotive industry
Current gain: 35...60
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| CPH6337-TL-W |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 12V; 3.5A; 1.6W; SOT23-6
Mounting: SMD
Power dissipation: 1.6W
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: P-MOSFET
Gate-source voltage: 10V
Case: SOT23-6
On-state resistance: 54mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 12V; 3.5A; 1.6W; SOT23-6
Mounting: SMD
Power dissipation: 1.6W
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: P-MOSFET
Gate-source voltage: 10V
Case: SOT23-6
On-state resistance: 54mΩ
на замовлення 2639 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2639+ | 15.54 грн |
| MM5Z4717T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxTxG
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| SZMM5Z4717T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxTxG
Application: automotive industry
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| BZX79C2V7 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: BZX79C
на замовлення 2235 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.93 грн |
| 68+ | 6.14 грн |
| 84+ | 4.97 грн |
| 140+ | 2.97 грн |
| 250+ | 2.23 грн |
| 500+ | 1.83 грн |
| 1000+ | 1.79 грн |
| GBPC15005 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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| GBPC15005W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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| FDN357N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Gate charge: 5.9nC
Polarisation: unipolar
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Gate charge: 5.9nC
Polarisation: unipolar
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.9A
Kind of channel: enhancement
Drain-source voltage: 30V
на замовлення 1051 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.90 грн |
| 13+ | 32.34 грн |
| 15+ | 29.18 грн |
| 50+ | 23.05 грн |
| 100+ | 20.81 грн |
| 500+ | 16.00 грн |
| 1000+ | 14.01 грн |
| FDA16N50-F109 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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Мінімальне замовлення: 450 шт
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| FDA16N50LDTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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| SZESD8551MXWT5G |
|
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8.3V; bidirectional; X2DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.3V
Semiconductor structure: bidirectional
Case: X2DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8.3V; bidirectional; X2DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.3V
Semiconductor structure: bidirectional
Case: X2DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| FOD420V |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD420; tube
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: THT
Number of channels: 1
Manufacturer series: FOD420
Kind of package: tube
Turn-on time: 60µs
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD420; tube
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: THT
Number of channels: 1
Manufacturer series: FOD420
Kind of package: tube
Turn-on time: 60µs
Turn-off time: 52µs
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Мінімальне замовлення: 1000 шт
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| NTD20N06T4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2477 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 144.65 грн |
| 5+ | 106.96 грн |
| 10+ | 93.69 грн |
| 50+ | 67.99 грн |
| 100+ | 60.53 грн |
| 200+ | 55.55 грн |
| 500+ | 54.72 грн |
| NTDV20N06T4G-VF01 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTTFS020N06CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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| NVTFS020N06CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS020N06CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTDV20P06LT4G-VF01 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.5A
Pulsed drain current: 50A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 143mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.5A
Pulsed drain current: 50A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 143mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMFS3D6N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 131A; Idm: 1674A; 136W; DFN5
Mounting: SMD
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.6mΩ
Pulsed drain current: 1674A
Power dissipation: 136W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 131A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 131A; Idm: 1674A; 136W; DFN5
Mounting: SMD
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.6mΩ
Pulsed drain current: 1674A
Power dissipation: 136W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 131A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 1500 шт
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| 50A02CH-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.7W; CPH3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.7W
Case: CPH3
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 690MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.7W; CPH3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.7W
Case: CPH3
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 690MHz
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| NCV7041D3G050R2G |
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 100kHz; Ch: 1; 3÷5.5VDC; SO8; 50V/V
Type of integrated circuit: instrumentation amplifier
Bandwidth: 100kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 3...5.5V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 1V/μs
Gain: 50V/V
Input offset voltage: 0.4mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 100kHz; Ch: 1; 3÷5.5VDC; SO8; 50V/V
Type of integrated circuit: instrumentation amplifier
Bandwidth: 100kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 3...5.5V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 1V/μs
Gain: 50V/V
Input offset voltage: 0.4mV
Kind of package: reel; tape
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| SZNUP4114HMR6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6.5V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6.5V
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| HUF75542P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
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| MUN5212DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
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