Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SS36 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.27W |
на замовлення 2177 шт: термін постачання 21-30 дні (днів) |
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TL431AIDR2G | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
TL431BCDR2G | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
TL431BCLPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
TL431BILPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FAN3100TSX | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Type of integrated circuit: driver Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver Output current: -2.5...1.8A Impulse rise time: 20ns Pulse fall time: 14ns Number of channels: 1 Kind of output: non-inverting Technology: MillerDrive™ Supply voltage: 4.5...18V DC |
на замовлення 2999 шт: термін постачання 21-30 дні (днів) |
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FGH40T120SQDNL4 | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4 Case: TO247-4 Mounting: THT Type of transistor: IGBT Power dissipation: 227W Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 221nC Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FGHL40T120RWD | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 174nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FGHL40T120SWD | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 118nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FGH50T65UPD | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 170W Kind of package: tube Gate charge: 230nC Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Pulsed collector current: 150A Type of transistor: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FGHL50T65LQDT | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 170W Kind of package: tube Gate charge: 509nC Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Pulsed collector current: 200A Type of transistor: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FGHL50T65MQD | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 134W Kind of package: tube Gate charge: 94nC Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Pulsed collector current: 200A Type of transistor: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FGHL50T65MQDT | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 134W Kind of package: tube Gate charge: 99nC Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Pulsed collector current: 200A Type of transistor: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FGHL50T65SQDT | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 134W Kind of package: tube Gate charge: 99.7nC Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Pulsed collector current: 200A Type of transistor: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FQA36P15 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -25.5A Power dissipation: 294W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
TL431CDR2G | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
TL431CLPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
TL431CLPRPG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
TL431ILPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NL27WZ14DTT1G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; TSOP6; 1.65÷5.5VDC; -55÷125°C Case: TSOP6 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: digital Number of channels: dual; 2 Kind of input: with Schmitt trigger Kind of gate: NOT Operating temperature: -55...125°C Number of inputs: 1 Supply voltage: 1.65...5.5V DC |
на замовлення 690 шт: термін постачання 21-30 дні (днів) |
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1N4937RLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns |
на замовлення 4919 шт: термін постачання 21-30 дні (днів) |
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MPSA42 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk |
на замовлення 4613 шт: термін постачання 21-30 дні (днів) |
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FGY140T120SWD | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 576W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 560A Mounting: THT Gate charge: 415.4nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FGH4L40T120LQD | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4 Case: TO247-4 Mounting: THT Type of transistor: IGBT Power dissipation: 153W Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 227nC Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
TL431IDR2G | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4733A | ONSEMI |
![]() Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N47xxA |
на замовлення 2118 шт: термін постачання 21-30 дні (днів) |
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1N4749A | ONSEMI |
![]() Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA |
на замовлення 2201 шт: термін постачання 21-30 дні (днів) |
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1N4933G | ONSEMI |
![]() Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Case: CASE59-10; DO41 Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 200ns Max. forward impulse current: 30A Kind of package: bulk Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDG6335N | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 442mΩ Gate charge: 1.4nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 0.7A |
на замовлення 477 шт: термін постачання 21-30 дні (днів) |
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BAS16WT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ifsm: 0.5A; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SC70 Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 7620 шт: термін постачання 21-30 дні (днів) |
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BAS16XV2T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 2082 шт: термін постачання 21-30 дні (днів) |
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BAS16XV2T5G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 3816 шт: термін постачання 21-30 дні (днів) |
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NCP5181DR2G | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.2...1.4A Mounting: SMD Impulse rise time: 60ns Pulse fall time: 40ns Number of channels: 2 Kind of package: reel; tape Protection: undervoltage UVP Topology: IGBT half-bridge; MOSFET half-bridge Operating temperature: -40...125°C Voltage class: 600V Supply voltage: 10...20V DC |
на замовлення 1778 шт: термін постачання 21-30 дні (днів) |
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MC74VHC1G04DTT1G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: VHC Number of inputs: 1 |
на замовлення 1633 шт: термін постачання 21-30 дні (днів) |
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FDG6321C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 25/-25V Drain current: 0.5/-0.41A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8/±8V On-state resistance: 720/1800mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.3/1.5nC Technology: PowerTrench® Kind of transistor: complementary pair |
на замовлення 2588 шт: термін постачання 21-30 дні (днів) |
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BAT54LT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 0.3A Kind of package: reel; tape Capacitance: 7.6pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 9218 шт: термін постачання 21-30 дні (днів) |
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MC1413BDG | ONSEMI |
![]() Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 30V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NL27WZ07DTT1G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC Case: TSOP6 Mounting: SMD Type of integrated circuit: digital Number of channels: 2 Kind of integrated circuit: buffer; non-inverting Operating temperature: -55...125°C Supply voltage: 1.65...5.5V DC |
на замовлення 202 шт: термін постачання 21-30 дні (днів) |
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FXL5T244BQX | ONSEMI |
![]() Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 5 Number of inputs: 5 Number of outputs: 5 Supply voltage: 1.1...3.6V DC Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: DQFN14 |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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ES3J | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 45pF Power dissipation: 1.66W |
на замовлення 3293 шт: термін постачання 21-30 дні (днів) |
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MBR20L45CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.47V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube Heatsink thickness: 1.15...1.39mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
FDMS86520 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 80A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP51460SN33T1G | ONSEMI |
![]() Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA Operating temperature: 0...100°C Type of integrated circuit: voltage reference source Reference voltage: 3.3V Maximum output current: 20mA Kind of package: reel; tape Mounting: SMD Case: SOT23 Tolerance: ±1% Operating voltage: 4.2...28V |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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MC14073BDG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: triple; 3 Delay time: 130ns Kind of package: tube Kind of gate: AND Technology: CMOS Family: HEF4000B Mounting: SMD Case: SO14 Number of inputs: 3 Supply voltage: 3...18V DC |
на замовлення 520 шт: термін постачання 21-30 дні (днів) |
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MC14073BDR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Operating temperature: -55...125°C Number of inputs: 3 Type of integrated circuit: digital Number of channels: triple; 3 Delay time: 130ns Kind of package: reel; tape Kind of gate: AND Technology: CMOS Family: HEF4000B Mounting: SMD Case: SO14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
FSQ0365RLX | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: LSOP8 Mounting: SMD Operating temperature: -40...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 4.5Ω Power: 19W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HCT595ADG | ONSEMI |
![]() Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; tube Type of integrated circuit: digital Operating temperature: -55...125°C Case: SOIC16 Number of inputs: 5 Supply voltage: 4.5...5.5V DC Number of channels: 1 Kind of output: 3-state Kind of package: tube Manufacturer series: HCT Technology: CMOS; TTL Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register Family: HCT Mounting: SMD |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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MC74HCT595ADTG | ONSEMI |
![]() Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; tube Type of integrated circuit: digital Operating temperature: -55...125°C Case: TSSOP16 Number of inputs: 5 Supply voltage: 4.5...5.5V DC Number of channels: 1 Kind of output: 3-state Kind of package: tube Manufacturer series: HCT Technology: CMOS; TTL Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register Family: HCT Mounting: SMD |
на замовлення 268 шт: термін постачання 21-30 дні (днів) |
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MMUN2214LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 17682 шт: термін постачання 21-30 дні (днів) |
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74FST3257MNTWG | ONSEMI |
![]() Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Mounting: SMD Case: QFN16 Supply voltage: 4...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 3µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FDMS8025S | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Mounting: SMD Drain-source voltage: 30V Drain current: 49A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Case: Power56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DF10M | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A Electrical mounting: THT Features of semiconductor devices: glass passivated Max. off-state voltage: 1kV Type of bridge rectifier: single-phase Max. forward voltage: 1.1V Load current: 1.5A Max. forward impulse current: 50A Case: MDIP4L Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX79C2V4 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 0.1mA |
на замовлення 2309 шт: термін постачання 21-30 дні (днів) |
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FSUSB42MUX | ONSEMI |
![]() Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Case: MSOP10 Mounting: SMD Operating temperature: -40...85°C Number of channels: 2 Kind of output: DPDT Supply voltage: 2.4...4.4V DC |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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H11L2M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 4.17kV Case: DIP6 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: H11LXM |
на замовлення 933 шт: термін постачання 21-30 дні (днів) |
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74AC86MTCX | ONSEMI |
![]() ![]() Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: AC |
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В кошику од. на суму грн. | ||||||||||||||||||
74AC86SCX | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MC74AC86DR2G | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MC74AC86DTR2G | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM74HCT541MTC | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: HCT |
на замовлення 221 шт: термін постачання 21-30 дні (днів) |
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SS36 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
на замовлення 2177 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.90 грн |
16+ | 25.27 грн |
44+ | 20.77 грн |
100+ | 19.92 грн |
121+ | 19.61 грн |
250+ | 18.91 грн |
TL431AIDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
TL431BCDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
TL431BCLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
TL431BILPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
FAN3100TSX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -2.5...1.8A
Impulse rise time: 20ns
Pulse fall time: 14ns
Number of channels: 1
Kind of output: non-inverting
Technology: MillerDrive™
Supply voltage: 4.5...18V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -2.5...1.8A
Impulse rise time: 20ns
Pulse fall time: 14ns
Number of channels: 1
Kind of output: non-inverting
Technology: MillerDrive™
Supply voltage: 4.5...18V DC
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 88.49 грн |
10+ | 60.00 грн |
22+ | 41.55 грн |
60+ | 39.30 грн |
250+ | 37.83 грн |
FGH40T120SQDNL4 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 227W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 221nC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 227W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 221nC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
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В кошику
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FGHL40T120RWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
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В кошику
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FGHL40T120SWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
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В кошику
од. на суму грн.
FGH50T65UPD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 230nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 150A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 230nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 150A
Type of transistor: IGBT
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FGHL50T65LQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 509nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 509nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
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В кошику
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FGHL50T65MQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 94nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 94nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
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FGHL50T65MQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
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FGHL50T65SQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99.7nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99.7nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
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В кошику
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FQA36P15 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
TL431CDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
TL431CLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
TL431CLPRPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
TL431ILPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
NL27WZ14DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; TSOP6; 1.65÷5.5VDC; -55÷125°C
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Kind of input: with Schmitt trigger
Kind of gate: NOT
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; TSOP6; 1.65÷5.5VDC; -55÷125°C
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Kind of input: with Schmitt trigger
Kind of gate: NOT
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
на замовлення 690 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.37 грн |
23+ | 17.29 грн |
100+ | 10.70 грн |
105+ | 8.68 грн |
289+ | 8.22 грн |
1N4937RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
на замовлення 4919 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.52 грн |
46+ | 8.53 грн |
54+ | 7.21 грн |
80+ | 4.88 грн |
100+ | 4.19 грн |
250+ | 3.46 грн |
283+ | 3.23 грн |
776+ | 3.06 грн |
1000+ | 2.94 грн |
MPSA42 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
на замовлення 4613 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.87 грн |
33+ | 12.09 грн |
100+ | 7.05 грн |
147+ | 6.20 грн |
250+ | 5.97 грн |
404+ | 5.81 грн |
500+ | 5.58 грн |
FGY140T120SWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
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FGH4L40T120LQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 153W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 227nC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 153W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 227nC
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
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TL431IDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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од. на суму грн.
1N4733A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
на замовлення 2118 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.70 грн |
40+ | 9.69 грн |
50+ | 7.79 грн |
100+ | 4.74 грн |
341+ | 2.66 грн |
936+ | 2.52 грн |
1N4749A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
на замовлення 2201 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.53 грн |
34+ | 11.47 грн |
54+ | 7.22 грн |
100+ | 5.85 грн |
339+ | 2.69 грн |
932+ | 2.54 грн |
1N4933G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
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FDG6335N |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 442mΩ
Gate charge: 1.4nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.7A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 442mΩ
Gate charge: 1.4nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.7A
на замовлення 477 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.09 грн |
12+ | 35.04 грн |
50+ | 27.21 грн |
55+ | 16.82 грн |
149+ | 15.89 грн |
BAS16WT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ifsm: 0.5A; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ifsm: 0.5A; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 7620 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
63+ | 6.68 грн |
99+ | 3.95 грн |
178+ | 2.19 грн |
500+ | 1.50 грн |
869+ | 1.05 грн |
2390+ | 0.99 грн |
BAS16XV2T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 2082 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
61+ | 6.90 грн |
97+ | 4.03 грн |
125+ | 3.10 грн |
142+ | 2.74 грн |
581+ | 1.57 грн |
1598+ | 1.48 грн |
BAS16XV2T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 3816 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.18 грн |
68+ | 5.74 грн |
123+ | 3.16 грн |
408+ | 2.23 грн |
500+ | 2.22 грн |
1000+ | 2.02 грн |
NCP5181DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Mounting: SMD
Impulse rise time: 60ns
Pulse fall time: 40ns
Number of channels: 2
Kind of package: reel; tape
Protection: undervoltage UVP
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 10...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Mounting: SMD
Impulse rise time: 60ns
Pulse fall time: 40ns
Number of channels: 2
Kind of package: reel; tape
Protection: undervoltage UVP
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Voltage class: 600V
Supply voltage: 10...20V DC
на замовлення 1778 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 107.69 грн |
5+ | 92.24 грн |
10+ | 91.47 грн |
25+ | 88.37 грн |
28+ | 86.04 грн |
100+ | 82.94 грн |
MC74VHC1G04DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 1
на замовлення 1633 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.35 грн |
61+ | 6.36 грн |
70+ | 5.58 грн |
100+ | 5.14 грн |
190+ | 4.80 грн |
500+ | 4.64 грн |
521+ | 4.53 грн |
1000+ | 4.36 грн |
FDG6321C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.5/-0.41A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8/±8V
On-state resistance: 720/1800mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.3/1.5nC
Technology: PowerTrench®
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.5/-0.41A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8/±8V
On-state resistance: 720/1800mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.3/1.5nC
Technology: PowerTrench®
Kind of transistor: complementary pair
на замовлення 2588 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.41 грн |
13+ | 30.23 грн |
62+ | 14.88 грн |
168+ | 14.11 грн |
BAT54LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 9218 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
80+ | 5.23 грн |
107+ | 3.64 грн |
145+ | 2.68 грн |
169+ | 2.30 грн |
737+ | 1.23 грн |
1500+ | 1.21 грн |
2025+ | 1.16 грн |
3000+ | 1.14 грн |
MC1413BDG |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: tube
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: tube
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од. на суму грн.
NL27WZ07DTT1G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC
Case: TSOP6
Mounting: SMD
Type of integrated circuit: digital
Number of channels: 2
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC
Case: TSOP6
Mounting: SMD
Type of integrated circuit: digital
Number of channels: 2
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
на замовлення 202 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.86 грн |
32+ | 12.40 грн |
100+ | 10.39 грн |
104+ | 8.76 грн |
FXL5T244BQX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Number of inputs: 5
Number of outputs: 5
Supply voltage: 1.1...3.6V DC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: DQFN14
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Number of inputs: 5
Number of outputs: 5
Supply voltage: 1.1...3.6V DC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: DQFN14
на замовлення 71 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.77 грн |
10+ | 51.93 грн |
25+ | 49.61 грн |
ES3J |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
на замовлення 3293 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.38 грн |
16+ | 25.73 грн |
59+ | 15.43 грн |
162+ | 14.57 грн |
1000+ | 14.03 грн |
MBR20L45CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
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FDMS86520 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP51460SN33T1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Operating temperature: 0...100°C
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Maximum output current: 20mA
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Tolerance: ±1%
Operating voltage: 4.2...28V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Operating temperature: 0...100°C
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Maximum output current: 20mA
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Tolerance: ±1%
Operating voltage: 4.2...28V
на замовлення 134 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.47 грн |
10+ | 44.88 грн |
25+ | 38.14 грн |
35+ | 26.59 грн |
94+ | 25.19 грн |
MC14073BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
на замовлення 520 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.26 грн |
16+ | 25.73 грн |
55+ | 18.53 грн |
86+ | 10.62 грн |
237+ | 10.00 грн |
MC14073BDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
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FSQ0365RLX |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 4.5Ω
Power: 19W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 4.5Ω
Power: 19W
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MC74HCT595ADG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; tube
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SOIC16
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Number of channels: 1
Kind of output: 3-state
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Family: HCT
Mounting: SMD
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; tube
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SOIC16
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Number of channels: 1
Kind of output: 3-state
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Family: HCT
Mounting: SMD
на замовлення 94 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
12+ | 34.11 грн |
13+ | 30.77 грн |
25+ | 27.83 грн |
40+ | 22.87 грн |
MC74HCT595ADTG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; tube
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP16
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Number of channels: 1
Kind of output: 3-state
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Family: HCT
Mounting: SMD
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; tube
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP16
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Number of channels: 1
Kind of output: 3-state
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Family: HCT
Mounting: SMD
на замовлення 268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 75.13 грн |
10+ | 43.56 грн |
30+ | 31.39 грн |
80+ | 29.69 грн |
96+ | 29.30 грн |
192+ | 28.53 грн |
MMUN2214LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 17682 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.35 грн |
77+ | 5.04 грн |
124+ | 3.13 грн |
500+ | 2.31 грн |
772+ | 1.17 грн |
2125+ | 1.11 грн |
74FST3257MNTWG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: QFN16
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 3µA
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: QFN16
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 3µA
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FDMS8025S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
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DF10M |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
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BZX79C2V4 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.1mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.1mA
на замовлення 2309 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.85 грн |
64+ | 6.12 грн |
157+ | 2.47 грн |
473+ | 1.92 грн |
500+ | 1.87 грн |
1000+ | 1.79 грн |
FSUSB42MUX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Case: MSOP10
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Kind of output: DPDT
Supply voltage: 2.4...4.4V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Case: MSOP10
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Kind of output: DPDT
Supply voltage: 2.4...4.4V DC
на замовлення 418 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 69.29 грн |
10+ | 46.35 грн |
25+ | 41.16 грн |
34+ | 26.82 грн |
94+ | 25.35 грн |
H11L2M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: H11LXM
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: H11LXM
на замовлення 933 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 95.16 грн |
10+ | 56.28 грн |
21+ | 44.78 грн |
56+ | 42.34 грн |
500+ | 41.70 грн |
74AC86MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: AC
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74AC86SCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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MC74AC86DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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MC74AC86DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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MM74HCT541MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HCT
на замовлення 221 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 103.51 грн |
10+ | 55.27 грн |
25+ | 45.11 грн |
35+ | 26.66 грн |
94+ | 25.19 грн |