Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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KSE13003H2ASTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO Collector-emitter voltage: 400V Current gain: 14...21 Collector current: 1.5A Pulsed collector current: 3A Type of transistor: NPN Power dissipation: 20W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO126ISO Frequency: 4MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KSC1815YTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Power dissipation: 0.4W Polarisation: bipolar Frequency: 80MHz Collector-emitter voltage: 50V Current gain: 120...240 Collector current: 0.15A Type of transistor: NPN |
на замовлення 2001 шт: термін постачання 21-30 дні (днів) |
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SBC857BWT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 863 шт: термін постачання 21-30 дні (днів) |
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KSD2012GTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 25W Case: TO220FP Current gain: 150...320 Mounting: THT Kind of package: tube Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CNY173M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 367 шт: термін постачання 21-30 дні (днів) |
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CNY173SM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 943 шт: термін постачання 21-30 дні (днів) |
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CNY173SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CNY173SR2VM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 1790 шт: термін постачання 21-30 дні (днів) |
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CNY173TVM | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSD1691GS | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Pulsed collector current: 8A Type of transistor: NPN Collector current: 5A Power dissipation: 20W Polarisation: bipolar Kind of package: bulk Current gain: 200...400 Collector-emitter voltage: 60V Case: TO126ISO Mounting: THT |
на замовлення 1989 шт: термін постачання 21-30 дні (днів) |
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KSD1691GSTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Pulsed collector current: 8A Type of transistor: NPN Collector current: 5A Power dissipation: 20W Polarisation: bipolar Kind of package: tube Current gain: 200...400 Collector-emitter voltage: 60V Case: TO126ISO Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
KSD1691YS | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Pulsed collector current: 8A Type of transistor: NPN Collector current: 5A Power dissipation: 20W Polarisation: bipolar Kind of package: bulk Current gain: 160...320 Collector-emitter voltage: 60V Case: TO126ISO Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
KSD1691YSTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Pulsed collector current: 8A Type of transistor: NPN Collector current: 5A Power dissipation: 20W Polarisation: bipolar Kind of package: tube Current gain: 160...320 Collector-emitter voltage: 60V Case: TO126ISO Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KSD1616AGBU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Pulsed collector current: 2A Type of transistor: NPN Collector current: 1A Power dissipation: 0.75W Polarisation: bipolar Kind of package: bulk Current gain: 200...400 Collector-emitter voltage: 60V Frequency: 160MHz Case: TO92 Mounting: THT |
на замовлення 9858 шт: термін постачання 21-30 дні (днів) |
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KSD1616AGTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed Type of transistor: NPN Collector current: 1A Power dissipation: 0.75W Polarisation: bipolar Kind of package: Ammo Pack Current gain: 200...400 Collector-emitter voltage: 60V Frequency: 160MHz Case: TO92 Formed Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
KSD1616AYTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Type of transistor: NPN Collector current: 1A Power dissipation: 0.75W Polarisation: bipolar Kind of package: Ammo Pack Current gain: 135...270 Collector-emitter voltage: 60V Frequency: 160MHz Case: TO92 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
KSD880YTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 30W Case: TO220AB Current gain: 100...200 Mounting: THT Kind of package: tube Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
KSA928AYTA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 1W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 120MHz Collector current: 2A Collector-emitter voltage: 30V Current gain: 160...320 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
KSC2383OTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KSC1008CYTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed Mounting: THT Case: TO92 Formed Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.8W Polarisation: bipolar Kind of package: Ammo Pack Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 |
на замовлення 1581 шт: термін постачання 21-30 дні (днів) |
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KSC1008YBU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Mounting: THT Case: TO92 Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.8W Polarisation: bipolar Kind of package: bulk Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
KSC1008YTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed Mounting: THT Case: TO92 Formed Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.8W Polarisation: bipolar Kind of package: Ammo Pack Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2N7002 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 74823 шт: термін постачання 21-30 дні (днів) |
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NTHL075N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 120A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74VHC1G09DTT1G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP5 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: open drain Quiescent current: 40µA Kind of gate: AND Number of inputs: 2 Family: VHC |
на замовлення 1959 шт: термін постачання 21-30 дні (днів) |
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NLSV1T34DFT2G | ONSEMI |
![]() Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Supply voltage: 0.9...4.5V DC Quiescent current: 2µA Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: SOT353 |
на замовлення 1063 шт: термін постачання 21-30 дні (днів) |
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1N4448 | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 4A Power dissipation: 0.5W |
на замовлення 2786 шт: термін постачання 21-30 дні (днів) |
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1N5401G | ONSEMI |
![]() Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 459 шт: термін постачання 21-30 дні (днів) |
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4N25M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 0.85kV; CTR@If: 20%@10mA Mounting: THT Insulation voltage: 0.85kV CTR@If: 20%@10mA Type of optocoupler: optocoupler Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs Number of channels: 1 Kind of output: transistor |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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1N4004G | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 193 шт: термін постачання 21-30 дні (днів) |
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6N136VM | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Number of pins: 8 Manufacturer series: 6N136M Max. off-state voltage: 5V |
на замовлення 284 шт: термін постачання 21-30 дні (днів) |
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1N4006G | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 1675 шт: термін постачання 21-30 дні (днів) |
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MC74ACT139DG | ONSEMI |
![]() Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Technology: TTL Mounting: SMD Case: SOIC16 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Family: ACT Kind of package: tube Operating temperature: -40...85°C |
на замовлення 229 шт: термін постачання 21-30 дні (днів) |
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6N137SM | ONSEMI |
![]() ![]() Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 30ns Manufacturer series: 6N137M |
на замовлення 641 шт: термін постачання 21-30 дні (днів) |
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FQD8P10TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2075 шт: термін постачання 21-30 дні (днів) |
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DTA115EET1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416 Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80...150 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 100kΩ Base-emitter resistor: 100kΩ |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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6N136SM | ONSEMI |
![]() ![]() Description: Optocoupler Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KSA1298YMTF | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB Case: SOT23; TO236AB Frequency: 120MHz Collector-emitter voltage: 25V Current gain: 100...320 Collector current: 0.8A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
на замовлення 2045 шт: термін постачання 21-30 дні (днів) |
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FXMA2104UMX | ONSEMI |
![]() Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 4 Number of inputs: 4 Number of outputs: 4 Supply voltage: 1.65...5.5V DC Frequency: 26MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: MLP12 |
на замовлення 3657 шт: термін постачання 21-30 дні (днів) |
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1N4005G | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 2407 шт: термін постачання 21-30 дні (днів) |
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FSUSB242GEVB | ONSEMI |
Category: Unclassified Description: FSUSB242GEVB |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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UF4007 | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Leakage current: 75µA Power dissipation: 2.08W Capacitance: 17pF |
на замовлення 1993 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SMD-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Power dissipation: 174W Case: TO247-3 Mounting: THT Gate charge: 119nC Kind of package: tube Collector current: 40A Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGAF40N60SMD | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF Type of transistor: IGBT Power dissipation: 58W Case: TO3PF Mounting: THT Gate charge: 119nC Kind of package: tube Collector current: 40A Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGAF40N60UFTU | ONSEMI |
![]() ![]() Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 77nC Kind of package: tube Collector current: 20A Pulsed collector current: 160A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGB20N60SFD-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD Type of transistor: IGBT Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 63nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Application: ignition systems Version: ESD Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGA40N65SMD | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 174W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 174W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 119nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGH60T65SHD-F155 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 102nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGH60T65SQD-F155 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 79nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGA40T65SHD | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 134W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 72.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FGB40T65SPD-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Features of semiconductor devices: logic level Version: ESD Application: ignition systems |
на замовлення 772 шт: термін постачання 21-30 дні (днів) |
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FGH40T65SHD-F155 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 72.2nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGH40T65SHDF-F155 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 68nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGH40T65SQD-F155 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 80nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGHL40T65MQD | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 86nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGHL40T65MQDT | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 80nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TL431ACDG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Kind of package: tube Maximum output current: 0.1A Operating voltage: 2.495...36V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TL431ACDR2G | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Maximum output current: 0.1A Operating voltage: 2.495...36V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TL431ACLPG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TL431ACLPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Maximum output current: 0.1A Operating voltage: 2.495...36V |
товару немає в наявності |
В кошику од. на суму грн. |
KSE13003H2ASTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Collector-emitter voltage: 400V
Current gain: 14...21
Collector current: 1.5A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Collector-emitter voltage: 400V
Current gain: 14...21
Collector current: 1.5A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Frequency: 4MHz
товару немає в наявності
В кошику
од. на суму грн.
KSC1815YTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Power dissipation: 0.4W
Polarisation: bipolar
Frequency: 80MHz
Collector-emitter voltage: 50V
Current gain: 120...240
Collector current: 0.15A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Power dissipation: 0.4W
Polarisation: bipolar
Frequency: 80MHz
Collector-emitter voltage: 50V
Current gain: 120...240
Collector current: 0.15A
Type of transistor: NPN
на замовлення 2001 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.87 грн |
33+ | 11.94 грн |
100+ | 7.73 грн |
251+ | 3.62 грн |
689+ | 3.43 грн |
2000+ | 3.33 грн |
SBC857BWT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 863 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.85 грн |
54+ | 7.29 грн |
67+ | 5.81 грн |
155+ | 2.51 грн |
500+ | 1.69 грн |
591+ | 1.54 грн |
KSD2012GTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Current gain: 150...320
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Current gain: 150...320
Mounting: THT
Kind of package: tube
Frequency: 3MHz
товару немає в наявності
В кошику
од. на суму грн.
CNY173M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 367 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.06 грн |
14+ | 29.53 грн |
50+ | 20.77 грн |
51+ | 18.06 грн |
100+ | 16.36 грн |
CNY173SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 943 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.92 грн |
13+ | 30.93 грн |
46+ | 19.92 грн |
127+ | 18.84 грн |
CNY173SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
товару немає в наявності
В кошику
од. на суму грн.
CNY173SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 1790 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.56 грн |
16+ | 24.96 грн |
40+ | 23.41 грн |
50+ | 21.24 грн |
CNY173TVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
товару немає в наявності
В кошику
од. на суму грн.
KSD1691GS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Pulsed collector current: 8A
Type of transistor: NPN
Collector current: 5A
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Current gain: 200...400
Collector-emitter voltage: 60V
Case: TO126ISO
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Pulsed collector current: 8A
Type of transistor: NPN
Collector current: 5A
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Current gain: 200...400
Collector-emitter voltage: 60V
Case: TO126ISO
Mounting: THT
на замовлення 1989 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.10 грн |
8+ | 50.69 грн |
25+ | 44.80 грн |
26+ | 35.97 грн |
70+ | 34.03 грн |
KSD1691GSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Pulsed collector current: 8A
Type of transistor: NPN
Collector current: 5A
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Current gain: 200...400
Collector-emitter voltage: 60V
Case: TO126ISO
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Pulsed collector current: 8A
Type of transistor: NPN
Collector current: 5A
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Current gain: 200...400
Collector-emitter voltage: 60V
Case: TO126ISO
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
KSD1691YS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Pulsed collector current: 8A
Type of transistor: NPN
Collector current: 5A
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Current gain: 160...320
Collector-emitter voltage: 60V
Case: TO126ISO
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Pulsed collector current: 8A
Type of transistor: NPN
Collector current: 5A
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Current gain: 160...320
Collector-emitter voltage: 60V
Case: TO126ISO
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
KSD1691YSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Pulsed collector current: 8A
Type of transistor: NPN
Collector current: 5A
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Current gain: 160...320
Collector-emitter voltage: 60V
Case: TO126ISO
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Pulsed collector current: 8A
Type of transistor: NPN
Collector current: 5A
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Current gain: 160...320
Collector-emitter voltage: 60V
Case: TO126ISO
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
KSD1616AGBU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Pulsed collector current: 2A
Type of transistor: NPN
Collector current: 1A
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: bulk
Current gain: 200...400
Collector-emitter voltage: 60V
Frequency: 160MHz
Case: TO92
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Pulsed collector current: 2A
Type of transistor: NPN
Collector current: 1A
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: bulk
Current gain: 200...400
Collector-emitter voltage: 60V
Frequency: 160MHz
Case: TO92
Mounting: THT
на замовлення 9858 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.56 грн |
21+ | 18.53 грн |
100+ | 10.70 грн |
117+ | 7.75 грн |
321+ | 7.36 грн |
5000+ | 7.13 грн |
KSD1616AGTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Type of transistor: NPN
Collector current: 1A
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Current gain: 200...400
Collector-emitter voltage: 60V
Frequency: 160MHz
Case: TO92 Formed
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Type of transistor: NPN
Collector current: 1A
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Current gain: 200...400
Collector-emitter voltage: 60V
Frequency: 160MHz
Case: TO92 Formed
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
KSD1616AYTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Type of transistor: NPN
Collector current: 1A
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Current gain: 135...270
Collector-emitter voltage: 60V
Frequency: 160MHz
Case: TO92
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Type of transistor: NPN
Collector current: 1A
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Current gain: 135...270
Collector-emitter voltage: 60V
Frequency: 160MHz
Case: TO92
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
KSD880YTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 30W
Case: TO220AB
Current gain: 100...200
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 30W
Case: TO220AB
Current gain: 100...200
Mounting: THT
Kind of package: tube
Frequency: 3MHz
товару немає в наявності
В кошику
од. на суму грн.
KSA928AYTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 120MHz
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 120MHz
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
товару немає в наявності
В кошику
од. на суму грн.
KSC2383OTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
KSC1008CYTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
на замовлення 1581 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.88 грн |
28+ | 13.95 грн |
36+ | 10.77 грн |
100+ | 7.44 грн |
182+ | 5.04 грн |
499+ | 4.73 грн |
KSC1008YBU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: bulk
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: bulk
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
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KSC1008YTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
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2N7002 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 74823 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.21 грн |
30+ | 13.18 грн |
50+ | 10.15 грн |
100+ | 9.22 грн |
162+ | 5.58 грн |
444+ | 5.35 грн |
NTHL075N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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MC74VHC1G09DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Quiescent current: 40µA
Kind of gate: AND
Number of inputs: 2
Family: VHC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Quiescent current: 40µA
Kind of gate: AND
Number of inputs: 2
Family: VHC
на замовлення 1959 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.18 грн |
53+ | 7.36 грн |
100+ | 6.98 грн |
166+ | 5.58 грн |
250+ | 5.50 грн |
453+ | 5.27 грн |
NLSV1T34DFT2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Supply voltage: 0.9...4.5V DC
Quiescent current: 2µA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT353
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Supply voltage: 0.9...4.5V DC
Quiescent current: 2µA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT353
на замовлення 1063 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.09 грн |
10+ | 41.24 грн |
25+ | 35.81 грн |
29+ | 31.70 грн |
79+ | 30.00 грн |
500+ | 28.84 грн |
1N4448 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
на замовлення 2786 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.14 грн |
129+ | 3.02 грн |
176+ | 2.21 грн |
250+ | 1.90 грн |
500+ | 1.67 грн |
1000+ | 1.44 грн |
1064+ | 0.85 грн |
1N5401G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 459 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.70 грн |
28+ | 14.03 грн |
83+ | 10.93 грн |
100+ | 9.92 грн |
4N25M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 0.85kV; CTR@If: 20%@10mA
Mounting: THT
Insulation voltage: 0.85kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 0.85kV; CTR@If: 20%@10mA
Mounting: THT
Insulation voltage: 0.85kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
на замовлення 38 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.76 грн |
13+ | 31.16 грн |
1N4004G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 193 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.52 грн |
59+ | 6.59 грн |
100+ | 4.76 грн |
6N136VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Number of pins: 8
Manufacturer series: 6N136M
Max. off-state voltage: 5V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Number of pins: 8
Manufacturer series: 6N136M
Max. off-state voltage: 5V
на замовлення 284 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
38+ | 167.79 грн |
200+ | 135.65 грн |
1N4006G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 1675 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.02 грн |
62+ | 6.28 грн |
100+ | 4.17 грн |
288+ | 3.15 грн |
791+ | 2.98 грн |
1000+ | 2.85 грн |
MC74ACT139DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: tube
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: tube
Operating temperature: -40...85°C
на замовлення 229 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 81.81 грн |
11+ | 37.98 грн |
32+ | 28.91 грн |
87+ | 27.36 грн |
144+ | 26.74 грн |
6N137SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
на замовлення 641 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 96.00 грн |
10+ | 49.53 грн |
22+ | 42.94 грн |
50+ | 42.87 грн |
59+ | 40.62 грн |
100+ | 40.07 грн |
500+ | 39.07 грн |
FQD8P10TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2075 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.60 грн |
10+ | 42.01 грн |
34+ | 26.82 грн |
94+ | 25.35 грн |
500+ | 25.27 грн |
1000+ | 24.26 грн |
DTA115EET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80...150
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80...150
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.52 грн |
55+ | 7.13 грн |
100+ | 4.41 грн |
387+ | 2.35 грн |
1063+ | 2.22 грн |
6000+ | 2.13 грн |
6N136SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
товару немає в наявності
В кошику
од. на суму грн.
KSA1298YMTF |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Case: SOT23; TO236AB
Frequency: 120MHz
Collector-emitter voltage: 25V
Current gain: 100...320
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Case: SOT23; TO236AB
Frequency: 120MHz
Collector-emitter voltage: 25V
Current gain: 100...320
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 2045 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.03 грн |
46+ | 8.60 грн |
100+ | 5.66 грн |
393+ | 2.33 грн |
1078+ | 2.19 грн |
FXMA2104UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Supply voltage: 1.65...5.5V DC
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP12
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Supply voltage: 1.65...5.5V DC
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP12
на замовлення 3657 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.90 грн |
1N4005G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 2407 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.03 грн |
39+ | 10.00 грн |
49+ | 7.97 грн |
100+ | 5.50 грн |
350+ | 2.60 грн |
961+ | 2.46 грн |
FSUSB242GEVB |
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 9102.33 грн |
UF4007 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Power dissipation: 2.08W
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Power dissipation: 2.08W
Capacitance: 17pF
на замовлення 1993 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.38 грн |
25+ | 16.05 грн |
100+ | 9.46 грн |
128+ | 7.05 грн |
353+ | 6.67 грн |
FGH40N60SMD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
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FGAF40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
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FGAF40N60UFTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 20A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 20A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
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FGB20N60SFD-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
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FGA40N65SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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FGH60T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
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FGH60T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
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FGA40T65SHD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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FGB40T65SPD-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Application: ignition systems
на замовлення 772 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 278.81 грн |
5+ | 226.34 грн |
12+ | 213.94 грн |
100+ | 210.06 грн |
250+ | 205.41 грн |
FGH40T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
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FGH40T65SHDF-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
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FGH40T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
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FGHL40T65MQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
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FGHL40T65MQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
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TL431ACDG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
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TL431ACDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
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TL431ACLPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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TL431ACLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
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