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FDN357N FDN357N ONSEMI FDN357N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3
Mounting: SMD
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Gate charge: 5.9nC
Polarisation: unipolar
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
9+51.48 грн
13+32.71 грн
15+29.52 грн
Мінімальне замовлення: 9 шт
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FDA16N50-F109 FDA16N50-F109 ONSEMI FDA16N50_F109.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
товару немає в наявності
 Мінімальне замовлення: 450 шт
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FDA16N50LDTU ONSEMI FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw FDA16N50LDTU-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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SZESD8551MXWT5G ONSEMI esd8551-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8.3V; bidirectional; X2DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.3V
Semiconductor structure: bidirectional
Case: X2DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FOD420V FOD420V ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD420; tube
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: THT
Number of channels: 1
Manufacturer series: FOD420
Kind of package: tube
Turn-on time: 60µs
Turn-off time: 52µs
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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NTD20N06T4G NTD20N06T4G ONSEMI ntd20n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 21.2nC
Kind of package: reel; tape
на замовлення 2474 шт:
термін постачання 14-30 дні (днів)
5+100.25 грн
6+82.19 грн
10+77.16 грн
50+63.74 грн
100+58.71 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
NTDV20N06T4G-VF01 NTDV20N06T4G-VF01 ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 21.2nC
Kind of package: reel; tape
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NTTFS020N06CTAG ONSEMI NTTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 1500 шт
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NVTFS020N06CTAG ONSEMI NVTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS020N06CTAG ONSEMI NVTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTDV20P06LT4G-VF01 NTDV20P06LT4G-VF01 ONSEMI ntd20p06l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 143mΩ
Pulsed drain current: 50A
Power dissipation: 65W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 15.5A
Kind of channel: enhancement
Drain-source voltage: 60V
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NTMFS3D6N10MCLT1G ONSEMI ntmfs3d6n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 131A; Idm: 1674A; 136W; DFN5
Mounting: SMD
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.6mΩ
Pulsed drain current: 1674A
Power dissipation: 136W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 131A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
 Мінімальне замовлення: 1500 шт
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50A02CH-TL-E ONSEMI 50A02CH-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.7W; CPH3
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.7W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...500
Kind of package: reel; tape
Case: CPH3
Frequency: 690MHz
Collector current: 0.5A
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NCV7041D3G050R2G ONSEMI Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 100kHz; Ch: 1; 3÷5.5VDC; SO8; 50V/V
Type of integrated circuit: instrumentation amplifier
Bandwidth: 100kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 3...5.5V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 1V/μs
Gain: 50V/V
Input offset voltage: 0.4mV
Kind of package: reel; tape
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SZNUP4114HMR6T1G ONSEMI nup4114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6.5V
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HUF75542P3 HUF75542P3 ONSEMI huf75542p3-d.pdf FAIRS45733-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
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 Мінімальне замовлення: 800 шт
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MUN5212DW1T1G MUN5212DW1T1G ONSEMI dtc124ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
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NSVMUN5212DW1T1G NSVMUN5212DW1T1G ONSEMI dtc124ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
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DTC124EET1G DTC124EET1G ONSEMI DTC124E-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Base resistor: 22kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Current gain: 60...100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
на замовлення 1793 шт:
термін постачання 14-30 дні (днів)
39+11.74 грн
61+6.96 грн
101+4.18 грн
500+2.99 грн
1000+2.61 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
DTC124EM3T5G ONSEMI dtc124e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 8000pcs.
Current gain: 60...100
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NZ9F18VST5G ONSEMI NZ9FxxS.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
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NZ9F18VT5G ONSEMI NZ9Fxx.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
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SZNZ9F18VST5G ONSEMI NZ9FxxS.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
Application: automotive industry
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SMUN5233T1G SMUN5233T1G ONSEMI dtc143z-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 595 шт:
термін постачання 14-30 дні (днів)
72+6.32 грн
107+3.94 грн
129+3.25 грн
142+2.97 грн
250+2.62 грн
500+2.35 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
SDTC124EET1G ONSEMI dtc124e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 60...100
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DTC113EM3T5G ONSEMI dtc113e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT723; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
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DTC113EET1G ONSEMI dtc113e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Manufacturer standard package: 3000pcs.
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NSVDTC113EM3T5G ONSEMI dtc113e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
Manufacturer standard package: 8000pcs.
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74VHCT573AMTC 74VHCT573AMTC ONSEMI 74vhct573a-d.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of package: tube
Trigger: level-triggered
Manufacturer series: VHCT
Quiescent current: 40µA
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 Мінімальне замовлення: 3 шт
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74VHCT573AMTCX 74VHCT573AMTCX ONSEMI 74vhct573a-d.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of package: reel; tape
Trigger: level-triggered
Manufacturer series: VHCT
Quiescent current: 40µA
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 Мінімальне замовлення: 2500 шт
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MC74VHCT573ADTG MC74VHCT573ADTG ONSEMI MC74VHCT573A-D.pdf Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: VHCT
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MC74VHCT573ADTRG MC74VHCT573ADTRG ONSEMI mc74vhct573a-d.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; TSSOP20; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHCT
Trigger: level-triggered
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 Мінімальне замовлення: 5000 шт
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MC74VHCT573ADWRG ONSEMI MC74VHCT573A-D.pdf Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHCT
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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74VHCT138AMTCX 74VHCT138AMTCX ONSEMI 74VHCT138A-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHCT
Family: VHCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Number of channels: 1
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 Мінімальне замовлення: 2500 шт
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MC74VHCT138ADTRG MC74VHCT138ADTRG ONSEMI MC74VHCT138A-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...5.5V DC
Kind of package: reel; tape
Number of inputs: 6
Family: VHCT
Kind of integrated circuit: 3 to 8 line; decoder
Manufacturer series: VHCT
Technology: CMOS; TTL
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SB07-03C-TB-E ONSEMI en2997-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59; SMD; 30V; 0.7A; reel,tape
Type of diode: Schottky rectifying
Case: SC59
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Kind of package: reel; tape
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CAT25040VI-GT3 ONSEMI CAT25010-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 4kb EEPROM
Kind of interface: serial
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
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В кошику  од. на суму  грн.
CAT25040VP2I-GT3 ONSEMI CAT25010-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 4kb EEPROM
Kind of interface: serial
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: TDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
CAT25040YI-GT3 ONSEMI CAT25010-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 4kb EEPROM
Kind of interface: serial
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MC7815CDTRKG MC7815CDTRKG ONSEMI mc7800-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
NC7S04P5X NC7S04P5X ONSEMI NC7S04.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MUN5214DW1T1G MUN5214DW1T1G ONSEMI dtc114yd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Mounting: SMD
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
на замовлення 785 шт:
термін постачання 14-30 дні (днів)
30+15.35 грн
38+11.07 грн
44+9.56 грн
63+6.69 грн
100+5.70 грн
500+4.03 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
SMUN5214T1G SMUN5214T1G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
на замовлення 1120 шт:
термін постачання 14-30 дні (днів)
36+12.64 грн
43+9.90 грн
49+8.72 грн
72+5.84 грн
100+4.88 грн
500+3.32 грн
1000+2.88 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
SMUN5214DW1T1G SMUN5214DW1T1G ONSEMI dtc114yd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
на замовлення 2987 шт:
термін постачання 14-30 дні (днів)
24+18.97 грн
31+13.59 грн
37+11.41 грн
100+9.06 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
MUN5214T1G MUN5214T1G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
на замовлення 7680 шт:
термін постачання 14-30 дні (днів)
125+3.61 грн
139+3.02 грн
149+2.82 грн
500+2.67 грн
1000+2.57 грн
1500+2.36 грн
3000+2.03 грн
Мінімальне замовлення: 125 шт
В кошику  од. на суму  грн.
DTC114YET1G ONSEMI DTC114Y-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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SDTC114YET1G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
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В кошику  од. на суму  грн.
SMUN5112DW1T1G SMUN5112DW1T1G ONSEMI dta124ed-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 22kΩ; R2: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
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В кошику  од. на суму  грн.
DTA124EET1G ONSEMI dta124e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.2W
Current gain: 60...100
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В кошику  од. на суму  грн.
DTA124EM3T5G DTA124EM3T5G ONSEMI dta124e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 260mW; SOT723; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.26W
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В кошику  од. на суму  грн.
MJD32CG MJD32CG ONSEMI MJD31_MJD32.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
на замовлення 1020 шт:
термін постачання 14-30 дні (днів)
5+90.32 грн
14+30.61 грн
25+29.18 грн
75+25.24 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
MJD32CRLG MJD32CRLG ONSEMI mjd31-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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В кошику  од. на суму  грн.
NJVMJD32CG NJVMJD32CG ONSEMI mjd31-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
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В кошику  од. на суму  грн.
FDMS8023S ONSEMI fdms8023s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56
Mounting: SMD
Case: Power56
Kind of package: reel; tape
Pulsed drain current: 100A
Power dissipation: 59W
Gate charge: 57nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
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В кошику  од. на суму  грн.
FDMS8025S ONSEMI FAIR-S-A0002363775-1.pdf?t.download=true&u=5oefqw fdms8025s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 50W
Gate charge: 47nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 4mΩ
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FDMS8027S ONSEMI fdms8027s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
On-state resistance: 6.8mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 36W
Gate charge: 31nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
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В кошику  од. на суму  грн.
RB521S30T5G RB521S30T5G ONSEMI rb521s30t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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NSVRB521S30T5G NSVRB521S30T5G ONSEMI rb521s30t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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В кошику  од. на суму  грн.
2SA1552S-TL-H 2SA1552S-TL-H ONSEMI 2SA1552-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 700 шт
В кошику  од. на суму  грн.
2SA1593S-TL-E 2SA1593S-TL-E ONSEMI 2SA1593-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 700 шт
В кошику  од. на суму  грн.
FDN357N FDN357N.pdf
FDN357N
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3
Mounting: SMD
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Gate charge: 5.9nC
Polarisation: unipolar
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+51.48 грн
13+32.71 грн
15+29.52 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
FDA16N50-F109 FDA16N50_F109.PDF
FDA16N50-F109
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
FDA16N50LDTU FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw FDA16N50LDTU-D.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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SZESD8551MXWT5G esd8551-d.pdf
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8.3V; bidirectional; X2DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.3V
Semiconductor structure: bidirectional
Case: X2DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FOD420V fod4218-d.pdf
FOD420V
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD420; tube
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: THT
Number of channels: 1
Manufacturer series: FOD420
Kind of package: tube
Turn-on time: 60µs
Turn-off time: 52µs
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NTD20N06T4G ntd20n06-d.pdf
NTD20N06T4G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 21.2nC
Kind of package: reel; tape
на замовлення 2474 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+100.25 грн
6+82.19 грн
10+77.16 грн
50+63.74 грн
100+58.71 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
NTDV20N06T4G-VF01
NTDV20N06T4G-VF01
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 21.2nC
Kind of package: reel; tape
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NTTFS020N06CTAG NTTFS020N06C-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVTFS020N06CTAG NVTFS020N06C-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS020N06CTAG NVTFS020N06C-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTDV20P06LT4G-VF01 ntd20p06l-d.pdf
NTDV20P06LT4G-VF01
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 143mΩ
Pulsed drain current: 50A
Power dissipation: 65W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 15.5A
Kind of channel: enhancement
Drain-source voltage: 60V
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NTMFS3D6N10MCLT1G ntmfs3d6n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 131A; Idm: 1674A; 136W; DFN5
Mounting: SMD
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.6mΩ
Pulsed drain current: 1674A
Power dissipation: 136W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 131A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
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Мінімальне замовлення: 1500 шт
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50A02CH-TL-E 50A02CH-D.PDF
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.7W; CPH3
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.7W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...500
Kind of package: reel; tape
Case: CPH3
Frequency: 690MHz
Collector current: 0.5A
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NCV7041D3G050R2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 100kHz; Ch: 1; 3÷5.5VDC; SO8; 50V/V
Type of integrated circuit: instrumentation amplifier
Bandwidth: 100kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 3...5.5V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 1V/μs
Gain: 50V/V
Input offset voltage: 0.4mV
Kind of package: reel; tape
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SZNUP4114HMR6T1G nup4114-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6.5V
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HUF75542P3 huf75542p3-d.pdf FAIRS45733-1.pdf?t.download=true&u=5oefqw
HUF75542P3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
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MUN5212DW1T1G dtc124ed-d.pdf
MUN5212DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
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NSVMUN5212DW1T1G dtc124ed-d.pdf
NSVMUN5212DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
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DTC124EET1G DTC124E-D.PDF
DTC124EET1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Base resistor: 22kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Current gain: 60...100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
на замовлення 1793 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.74 грн
61+6.96 грн
101+4.18 грн
500+2.99 грн
1000+2.61 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
DTC124EM3T5G dtc124e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 8000pcs.
Current gain: 60...100
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NZ9F18VST5G NZ9FxxS.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
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NZ9F18VT5G NZ9Fxx.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
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SZNZ9F18VST5G NZ9FxxS.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
Application: automotive industry
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SMUN5233T1G dtc143z-d.pdf
SMUN5233T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 595 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
72+6.32 грн
107+3.94 грн
129+3.25 грн
142+2.97 грн
250+2.62 грн
500+2.35 грн
Мінімальне замовлення: 72 шт
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SDTC124EET1G dtc124e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 60...100
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DTC113EM3T5G dtc113e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT723; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
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DTC113EET1G dtc113e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Manufacturer standard package: 3000pcs.
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NSVDTC113EM3T5G dtc113e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
Manufacturer standard package: 8000pcs.
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74VHCT573AMTC 74vhct573a-d.pdf
74VHCT573AMTC
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of package: tube
Trigger: level-triggered
Manufacturer series: VHCT
Quiescent current: 40µA
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Мінімальне замовлення: 3 шт
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74VHCT573AMTCX 74vhct573a-d.pdf
74VHCT573AMTCX
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of package: reel; tape
Trigger: level-triggered
Manufacturer series: VHCT
Quiescent current: 40µA
товару немає в наявності
Мінімальне замовлення: 2500 шт
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MC74VHCT573ADTG MC74VHCT573A-D.pdf
MC74VHCT573ADTG
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: VHCT
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MC74VHCT573ADTRG mc74vhct573a-d.pdf
MC74VHCT573ADTRG
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; TSSOP20; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHCT
Trigger: level-triggered
товару немає в наявності
Мінімальне замовлення: 5000 шт
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MC74VHCT573ADWRG MC74VHCT573A-D.pdf
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHCT
товару немає в наявності
Мінімальне замовлення: 1000 шт
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74VHCT138AMTCX 74VHCT138A-D.pdf
74VHCT138AMTCX
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHCT
Family: VHCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
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MC74VHCT138ADTRG MC74VHCT138A-D.pdf
MC74VHCT138ADTRG
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...5.5V DC
Kind of package: reel; tape
Number of inputs: 6
Family: VHCT
Kind of integrated circuit: 3 to 8 line; decoder
Manufacturer series: VHCT
Technology: CMOS; TTL
товару немає в наявності
Мінімальне замовлення: 2500 шт
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SB07-03C-TB-E en2997-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59; SMD; 30V; 0.7A; reel,tape
Type of diode: Schottky rectifying
Case: SC59
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Kind of package: reel; tape
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CAT25040VI-GT3 CAT25010-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 4kb EEPROM
Kind of interface: serial
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
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CAT25040VP2I-GT3 CAT25010-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 4kb EEPROM
Kind of interface: serial
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: TDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
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CAT25040YI-GT3 CAT25010-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 4kb EEPROM
Kind of interface: serial
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MC7815CDTRKG mc7800-d.pdf
MC7815CDTRKG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NC7S04P5X NC7S04.pdf
NC7S04P5X
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MUN5214DW1T1G dtc114yd-d.pdf
MUN5214DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Mounting: SMD
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
на замовлення 785 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.35 грн
38+11.07 грн
44+9.56 грн
63+6.69 грн
100+5.70 грн
500+4.03 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
SMUN5214T1G dtc114y-d.pdf
SMUN5214T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
на замовлення 1120 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.64 грн
43+9.90 грн
49+8.72 грн
72+5.84 грн
100+4.88 грн
500+3.32 грн
1000+2.88 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
SMUN5214DW1T1G dtc114yd-d.pdf
SMUN5214DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
на замовлення 2987 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
24+18.97 грн
31+13.59 грн
37+11.41 грн
100+9.06 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
MUN5214T1G dtc114y-d.pdf
MUN5214T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
на замовлення 7680 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
125+3.61 грн
139+3.02 грн
149+2.82 грн
500+2.67 грн
1000+2.57 грн
1500+2.36 грн
3000+2.03 грн
Мінімальне замовлення: 125 шт
В кошику  од. на суму  грн.
DTC114YET1G DTC114Y-D.PDF
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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SDTC114YET1G dtc114y-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
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SMUN5112DW1T1G dta124ed-d.pdf
SMUN5112DW1T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 22kΩ; R2: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
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DTA124EET1G dta124e-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.2W
Current gain: 60...100
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DTA124EM3T5G dta124e-d.pdf
DTA124EM3T5G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 260mW; SOT723; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.26W
товару немає в наявності
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MJD32CG MJD31_MJD32.pdf
MJD32CG
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
на замовлення 1020 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+90.32 грн
14+30.61 грн
25+29.18 грн
75+25.24 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
MJD32CRLG mjd31-d.pdf
MJD32CRLG
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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NJVMJD32CG mjd31-d.pdf
NJVMJD32CG
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
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В кошику  од. на суму  грн.
FDMS8023S fdms8023s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56
Mounting: SMD
Case: Power56
Kind of package: reel; tape
Pulsed drain current: 100A
Power dissipation: 59W
Gate charge: 57nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
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FDMS8025S FAIR-S-A0002363775-1.pdf?t.download=true&u=5oefqw fdms8025s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 50W
Gate charge: 47nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 4mΩ
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FDMS8027S fdms8027s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
On-state resistance: 6.8mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 36W
Gate charge: 31nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
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В кошику  од. на суму  грн.
RB521S30T5G rb521s30t1-d.pdf
RB521S30T5G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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NSVRB521S30T5G rb521s30t1-d.pdf
NSVRB521S30T5G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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2SA1552S-TL-H 2SA1552-D.PDF
2SA1552S-TL-H
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 700 шт
В кошику  од. на суму  грн.
2SA1593S-TL-E 2SA1593-D.PDF
2SA1593S-TL-E
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 700 шт
В кошику  од. на суму  грн.
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