Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BAR43 | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 0.75A Kind of package: reel; tape Power dissipation: 0.29W Reverse recovery time: 5ns |
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FGY100T65SCDT | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±25V Collector current: 100A Pulsed collector current: 300A Type of transistor: IGBT Power dissipation: 375W Kind of package: tube Gate charge: 157nC |
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В кошику од. на суму грн. | |||||||||||||||
NCP3335ADM300R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; Micro8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.34V Output voltage: 3V Output current: 0.5A Case: Micro8 Mounting: SMD Manufacturer series: NCP3335A Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 2 Input voltage: 2.6...12V |
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В кошику од. на суму грн. | |||||||||||||||
NCP3335ADM330R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; Micro8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.34V Output voltage: 3.3V Output current: 0.5A Case: Micro8 Mounting: SMD Manufacturer series: NCP3335A Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 2 Input voltage: 2.6...12V |
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В кошику од. на суму грн. | |||||||||||||||
NCP3335ADMADJR2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷10V; 500mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.34V Output voltage: 1.25...10V Output current: 0.5A Case: Micro8 Mounting: SMD Manufacturer series: NCP3335A Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 2 Input voltage: 2.6...12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP3335AMN250R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; DFN10; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.34V Output voltage: 2.5V Output current: 0.5A Case: DFN10 Mounting: SMD Manufacturer series: NCP3335A Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 2 Input voltage: 2.6...12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP3335AMN330R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN10; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.34V Output voltage: 3.3V Output current: 0.5A Case: DFN10 Mounting: SMD Manufacturer series: NCP3335A Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 2 Input voltage: 2.6...12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP3335AMNADJR2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷10V; 500mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.34V Output voltage: 1.25...10V Output current: 0.5A Case: DFN10 Mounting: SMD Manufacturer series: NCP3335A Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 2 Input voltage: 2.6...12V |
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В кошику од. на суму грн. | |||||||||||||||
FDMS86101A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
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DF01S | ONSEMI |
![]() Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L Case: SDIP 4L Kind of package: reel; tape Max. off-state voltage: 100V Load current: 1.5A Max. forward impulse current: 50A Electrical mounting: SMT Type of bridge rectifier: single-phase |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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FDMC7660S | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33 Case: Power33 Mounting: SMD Kind of package: reel; tape Drain current: 40A Polarisation: unipolar Gate charge: 66nC Technology: PowerTrench® Drain-source voltage: 30V Kind of channel: enhancement Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 200A On-state resistance: 3.1mΩ Power dissipation: 41W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCH041N65EF-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
FOD3184 | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Slew rate: 50kV/μs Max. off-state voltage: 5V Output voltage: 0...35V Turn-off time: 24ns Turn-on time: 38ns |
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FOD3184S | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: MOSFET Insulation voltage: 5kV Case: PDIP8 Slew rate: 50kV/μs Max. off-state voltage: 5V Manufacturer series: FOD3184 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74VHC14MX | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; VHC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHC Number of inputs: 1 |
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В кошику од. на суму грн. | ||||||||||||||
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NRVUS1JFA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||
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MC34152DR2G | ONSEMI |
![]() Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.1...18V DC Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: non-inverting Protection: undervoltage UVP |
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В кошику од. на суму грн. | ||||||||||||||
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FAN3227CMX | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Impulse rise time: 22ns Pulse fall time: 17ns |
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В кошику од. на суму грн. | ||||||||||||||
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FAN3227TMX | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Impulse rise time: 22ns Pulse fall time: 17ns |
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В кошику од. на суму грн. | ||||||||||||||
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FAN3229TMX | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Impulse rise time: 22ns Pulse fall time: 17ns |
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В кошику од. на суму грн. | ||||||||||||||
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TIP126TU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 2W |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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NTS4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.33W Drain-source voltage: 30V Drain current: 0.2A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 1310 шт: термін постачання 21-30 дні (днів) |
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NTA4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD Case: SC75 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.238A On-state resistance: 3.5Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Version: ESD Kind of channel: enhancement Gate-source voltage: ±10V Mounting: SMD |
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В кошику од. на суму грн. | ||||||||||||||
TL431BVDR2G | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FQP34N20 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3 Mounting: THT Drain-source voltage: 200V Drain current: 20A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 180W Polarisation: unipolar Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Case: TO220-3 |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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MMBT5550LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 140V Current gain: 60...250 Collector current: 0.6A Type of transistor: NPN Power dissipation: 0.225/0.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT23; TO236AB |
на замовлення 1924 шт: термін постачання 21-30 дні (днів) |
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NCP114AMX180TBG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; uDFN4; SMD Type of integrated circuit: voltage regulator Case: uDFN4 Mounting: SMD Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Operating temperature: -40...85°C Output voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD7551N2T5G | ONSEMI |
![]() Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Case: CASE714AB; X2DFN2 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Capacitance: 0.22...0.35pF Version: ESD Peak pulse power dissipation: 0.25W |
на замовлення 737 шт: термін постачання 21-30 дні (днів) |
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FDP80N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 320A Power dissipation: 176W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74ACT14DG | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT Type of integrated circuit: digital Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: ACT Kind of input: with Schmitt trigger Number of inputs: 1 Kind of gate: NOT |
на замовлення 127 шт: термін постачання 21-30 дні (днів) |
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MC74ACT14DR2G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Kind of input: with Schmitt trigger Family: ACT Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 2...6V DC Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC74ACT14DTR2G | ONSEMI |
![]() Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: TSSOP14 Kind of input: with Schmitt trigger Family: ACT Kind of package: reel; tape Operating temperature: -40...85°C Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Technology: TTL Kind of integrated circuit: hex; inverter; Schmitt trigger Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ES3B | ONSEMI |
![]() Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 45pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
H11L2SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 4.17kV Transfer rate: 1Mbps Case: PDIP6 Turn-on time: 1µs Turn-off time: 1.2µs Max. off-state voltage: 6V Output voltage: 0...16V Manufacturer series: H11L2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74VHC74MTCX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Supply voltage: 2...5.5V DC Mounting: SMD Case: SO14 Manufacturer series: VHC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered |
на замовлення 2496 шт: термін постачання 21-30 дні (днів) |
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MC74ACT245DWR2G | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: ACT |
на замовлення 660 шт: термін постачання 21-30 дні (днів) |
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SMUN5113DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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LM258N | ONSEMI |
![]() ![]() Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 0.6V/μs Operating temperature: -40...105°C Voltage supply range: ± 1.5...16V DC; 3...32V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
2SA2040-TL-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK Mounting: SMD Frequency: 330MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 8A Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar Kind of package: reel; tape Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NTGS4141NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.6A Power dissipation: 1W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4619 шт: термін постачання 21-30 дні (днів) |
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FAN73895MX | ONSEMI |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Operating temperature: -40...125°C Case: SO28-W Supply voltage: 10...20V DC Output current: -650...350mA Type of integrated circuit: driver Impulse rise time: 100ns Pulse fall time: 80ns Number of channels: 6 Kind of package: reel; tape Protection: undervoltage UVP Technology: MillerDrive™ Kind of integrated circuit: gate driver; high-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 600V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
KSD363RTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 120V; 6A; 40W; TO220AB Case: TO220AB Frequency: 10MHz Collector-emitter voltage: 120V Current gain: 40...80 Collector current: 6A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NTGD4167CT1G | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 1.9/-1.4A Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90/170mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 0.9W Kind of transistor: complementary pair |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMBFJ270 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 1571 шт: термін постачання 21-30 дні (днів) |
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MMBFJ176 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 250Ω |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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MMBFJ108 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 80mA Power dissipation: 0.35W Case: SuperSOT-3 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA On-state resistance: 8Ω |
на замовлення 1723 шт: термін постачання 21-30 дні (днів) |
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MMBFJ110 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 10mA Power dissipation: 0.46W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA On-state resistance: 18Ω |
товару немає в наявності |
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MMBZ5242BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; 1uA Case: SOT23 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 12V Leakage current: 1µA Power dissipation: 0.3W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMBZ52xxBLT1G Mounting: SMD |
на замовлення 423 шт: термін постачання 21-30 дні (днів) |
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1N3070TR | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: rectifying Case: DO35 Mounting: THT Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Capacitance: 5pF Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W Features of semiconductor devices: small signal Reverse recovery time: 50ns |
на замовлення 3816 шт: термін постачання 21-30 дні (днів) |
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FQPF2N80 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
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FQPF2N80YDTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
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1N5929BRLG | ONSEMI |
![]() Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Case: CASE59 Manufacturer series: 1N59xxB Power dissipation: 3W Mounting: THT Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Zener voltage: 15V Leakage current: 1µA Tolerance: ±5% |
на замовлення 4280 шт: термін постачання 21-30 дні (днів) |
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MC74HC73ADG | ONSEMI |
![]() Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube Type of integrated circuit: digital Kind of integrated circuit: JK flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Trigger: negative-edge-triggered |
на замовлення 365 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT50ADR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Number of channels: 6 Type of integrated circuit: digital Quiescent current: 40µA Manufacturer series: VHCT Technology: CMOS; TTL Kind of integrated circuit: buffer; non-inverting Case: SO14 Mounting: SMD |
на замовлення 502 шт: термін постачання 21-30 дні (днів) |
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NLU1GT50AMX1TCG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6 Operating temperature: -55...125°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Number of channels: 1 Type of integrated circuit: digital Quiescent current: 40µA Technology: CMOS; TTL Kind of integrated circuit: buffer; non-inverting Case: ULLGA6 Mounting: SMD |
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SMMBT2907ALT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
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SMMBT2907ALT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
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MBRS130T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Mounting: SMD Semiconductor structure: single diode Load current: 1A Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.6V Max. off-state voltage: 30V Case: SMB |
на замовлення 2213 шт: термін постачання 21-30 дні (днів) |
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NSS40201LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 2A Power dissipation: 0.54W Case: SOT23; TO236AB Current gain: 200 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry |
на замовлення 609 шт: термін постачання 21-30 дні (днів) |
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NCV8403ASTT1G | ONSEMI |
![]() Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223 Case: SOT223 Supply voltage: 42V DC On-state resistance: 123mΩ Output current: 15A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of package: reel; tape Kind of integrated circuit: low-side Mounting: SMD |
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BAR43 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Power dissipation: 0.29W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Power dissipation: 0.29W
Reverse recovery time: 5ns
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FGY100T65SCDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Type of transistor: IGBT
Power dissipation: 375W
Kind of package: tube
Gate charge: 157nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Type of transistor: IGBT
Power dissipation: 375W
Kind of package: tube
Gate charge: 157nC
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NCP3335ADM300R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 3V
Output current: 0.5A
Case: Micro8
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 3V
Output current: 0.5A
Case: Micro8
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
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NCP3335ADM330R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 3.3V
Output current: 0.5A
Case: Micro8
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 3.3V
Output current: 0.5A
Case: Micro8
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
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NCP3335ADMADJR2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷10V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.34V
Output voltage: 1.25...10V
Output current: 0.5A
Case: Micro8
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷10V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.34V
Output voltage: 1.25...10V
Output current: 0.5A
Case: Micro8
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
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NCP3335AMN250R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; DFN10; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 2.5V
Output current: 0.5A
Case: DFN10
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; DFN10; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 2.5V
Output current: 0.5A
Case: DFN10
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
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NCP3335AMN330R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN10; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 3.3V
Output current: 0.5A
Case: DFN10
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN10; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 3.3V
Output current: 0.5A
Case: DFN10
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
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NCP3335AMNADJR2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷10V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.34V
Output voltage: 1.25...10V
Output current: 0.5A
Case: DFN10
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷10V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.34V
Output voltage: 1.25...10V
Output current: 0.5A
Case: DFN10
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
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FDMS86101A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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DF01S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Case: SDIP 4L
Kind of package: reel; tape
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Case: SDIP 4L
Kind of package: reel; tape
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Electrical mounting: SMT
Type of bridge rectifier: single-phase
на замовлення 35 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.25 грн |
13+ | 30.27 грн |
FDMC7660S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Drain current: 40A
Polarisation: unipolar
Gate charge: 66nC
Technology: PowerTrench®
Drain-source voltage: 30V
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 200A
On-state resistance: 3.1mΩ
Power dissipation: 41W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Drain current: 40A
Polarisation: unipolar
Gate charge: 66nC
Technology: PowerTrench®
Drain-source voltage: 30V
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 200A
On-state resistance: 3.1mΩ
Power dissipation: 41W
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FCH041N65EF-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhancement
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FOD3184 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
Turn-off time: 24ns
Turn-on time: 38ns
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
Turn-off time: 24ns
Turn-on time: 38ns
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FOD3184S |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD3184
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD3184
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74VHC14MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Number of inputs: 1
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NRVUS1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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MC34152DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
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FAN3227CMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Impulse rise time: 22ns
Pulse fall time: 17ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Impulse rise time: 22ns
Pulse fall time: 17ns
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FAN3227TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Impulse rise time: 22ns
Pulse fall time: 17ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Impulse rise time: 22ns
Pulse fall time: 17ns
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FAN3229TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Impulse rise time: 22ns
Pulse fall time: 17ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Impulse rise time: 22ns
Pulse fall time: 17ns
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TIP126TU |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
на замовлення 1 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
NTS4001NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Drain-source voltage: 30V
Drain current: 0.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Drain-source voltage: 30V
Drain current: 0.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1310 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.81 грн |
31+ | 12.64 грн |
50+ | 7.89 грн |
100+ | 6.36 грн |
182+ | 4.98 грн |
499+ | 4.75 грн |
1000+ | 4.67 грн |
NTA4001NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.238A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±10V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.238A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±10V
Mounting: SMD
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TL431BVDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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FQP34N20 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 20A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 180W
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 20A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 180W
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220-3
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 157.87 грн |
8+ | 121.08 грн |
MMBT5550LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 140V
Current gain: 60...250
Collector current: 0.6A
Type of transistor: NPN
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 140V
Current gain: 60...250
Collector current: 0.6A
Type of transistor: NPN
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
на замовлення 1924 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.25 грн |
80+ | 4.83 грн |
121+ | 3.19 грн |
143+ | 2.69 грн |
722+ | 1.26 грн |
NCP114AMX180TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.8V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Case: uDFN4
Mounting: SMD
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Operating temperature: -40...85°C
Output voltage: 1.8V
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ESD7551N2T5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: CASE714AB; X2DFN2
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: CASE714AB; X2DFN2
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
на замовлення 737 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.20 грн |
43+ | 9.04 грн |
61+ | 6.28 грн |
79+ | 4.90 грн |
100+ | 3.94 грн |
200+ | 3.43 грн |
239+ | 3.42 грн |
FDP80N06 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
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MC74ACT14DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of gate: NOT
на замовлення 127 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 85.83 грн |
7+ | 58.09 грн |
10+ | 46.29 грн |
25+ | 33.64 грн |
36+ | 25.21 грн |
98+ | 23.83 грн |
110+ | 22.99 грн |
MC74ACT14DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of inputs: 1
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MC74ACT14DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Family: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Technology: TTL
Kind of integrated circuit: hex; inverter; Schmitt trigger
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Family: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Technology: TTL
Kind of integrated circuit: hex; inverter; Schmitt trigger
Number of inputs: 1
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ES3B |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
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H11L2SR2M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L2
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L2
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74VHC74MTCX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
на замовлення 2496 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.94 грн |
15+ | 26.06 грн |
25+ | 20.38 грн |
68+ | 13.26 грн |
186+ | 12.57 грн |
1500+ | 12.11 грн |
MC74ACT245DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: ACT
на замовлення 660 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 127.09 грн |
5+ | 84.30 грн |
10+ | 70.81 грн |
22+ | 42.53 грн |
58+ | 40.23 грн |
500+ | 38.78 грн |
SMUN5113DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.81 грн |
40+ | 9.81 грн |
54+ | 7.13 грн |
101+ | 3.80 грн |
123+ | 3.13 грн |
291+ | 3.08 грн |
800+ | 2.91 грн |
LM258N | ![]() |
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Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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2SA2040-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Mounting: SMD
Frequency: 330MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 8A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Mounting: SMD
Frequency: 330MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 8A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
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NTGS4141NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4619 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.44 грн |
18+ | 21.38 грн |
65+ | 13.79 грн |
179+ | 13.03 грн |
500+ | 12.57 грн |
FAN73895MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Case: SO28-W
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 6
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Case: SO28-W
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 6
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
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KSD363RTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 6A; 40W; TO220AB
Case: TO220AB
Frequency: 10MHz
Collector-emitter voltage: 120V
Current gain: 40...80
Collector current: 6A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 6A; 40W; TO220AB
Case: TO220AB
Frequency: 10MHz
Collector-emitter voltage: 120V
Current gain: 40...80
Collector current: 6A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
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NTGD4167CT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.9/-1.4A
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90/170mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 0.9W
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.9/-1.4A
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90/170mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 0.9W
Kind of transistor: complementary pair
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MMBFJ270 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 1571 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.44 грн |
16+ | 25.44 грн |
50+ | 19.92 грн |
74+ | 12.18 грн |
202+ | 11.57 грн |
MMBFJ176 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 250Ω
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 250Ω
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.09 грн |
15+ | 26.52 грн |
50+ | 19.62 грн |
66+ | 13.56 грн |
MMBFJ108 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
на замовлення 1723 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.44 грн |
14+ | 27.43 грн |
58+ | 15.71 грн |
157+ | 14.87 грн |
500+ | 14.71 грн |
1000+ | 14.25 грн |
MMBFJ110 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
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MMBZ5242BLT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; 1uA
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Leakage current: 1µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; 1uA
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Leakage current: 1µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
на замовлення 423 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
55+ | 7.63 грн |
90+ | 4.29 грн |
115+ | 3.34 грн |
175+ | 2.20 грн |
1N3070TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: rectifying
Case: DO35
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Features of semiconductor devices: small signal
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: rectifying
Case: DO35
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Features of semiconductor devices: small signal
Reverse recovery time: 50ns
на замовлення 3816 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.55 грн |
40+ | 9.58 грн |
62+ | 6.21 грн |
100+ | 4.56 грн |
287+ | 3.20 грн |
500+ | 2.91 грн |
FQPF2N80 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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FQPF2N80YDTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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1N5929BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Case: CASE59
Manufacturer series: 1N59xxB
Power dissipation: 3W
Mounting: THT
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 1µA
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Case: CASE59
Manufacturer series: 1N59xxB
Power dissipation: 3W
Mounting: THT
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 1µA
Tolerance: ±5%
на замовлення 4280 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.76 грн |
21+ | 18.47 грн |
50+ | 14.25 грн |
100+ | 12.57 грн |
107+ | 8.42 грн |
293+ | 7.96 грн |
1000+ | 7.66 грн |
MC74HC73ADG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: negative-edge-triggered
на замовлення 365 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.20 грн |
12+ | 34.64 грн |
25+ | 27.20 грн |
51+ | 17.86 грн |
138+ | 16.94 грн |
275+ | 16.40 грн |
MC74VHCT50ADR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of channels: 6
Type of integrated circuit: digital
Quiescent current: 40µA
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of channels: 6
Type of integrated circuit: digital
Quiescent current: 40µA
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Mounting: SMD
на замовлення 502 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.55 грн |
11+ | 35.25 грн |
25+ | 28.89 грн |
46+ | 19.85 грн |
125+ | 18.78 грн |
NLU1GT50AMX1TCG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Quiescent current: 40µA
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: ULLGA6
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Quiescent current: 40µA
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: ULLGA6
Mounting: SMD
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SMMBT2907ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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SMMBT2907ALT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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MBRS130T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Load current: 1A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Load current: 1A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
Case: SMB
на замовлення 2213 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.36 грн |
20+ | 19.77 грн |
50+ | 15.71 грн |
98+ | 9.43 грн |
269+ | 8.89 грн |
1000+ | 8.51 грн |
NSS40201LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 0.54W
Case: SOT23; TO236AB
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 0.54W
Case: SOT23; TO236AB
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
на замовлення 609 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.23 грн |
23+ | 16.86 грн |
50+ | 12.26 грн |
75+ | 11.27 грн |
90+ | 10.04 грн |
247+ | 9.50 грн |
NCV8403ASTT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Case: SOT223
Supply voltage: 42V DC
On-state resistance: 123mΩ
Output current: 15A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: low-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Case: SOT223
Supply voltage: 42V DC
On-state resistance: 123mΩ
Output current: 15A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: low-side
Mounting: SMD
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