| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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FDD9409-F085 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Power dissipation: 150W Case: DPAK Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NVMFD5C478NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8 Type of transistor: N-MOSFET x2 Drain-source voltage: 40V Drain current: 27A Power dissipation: 12W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 90A Polarisation: unipolar Gate charge: 6.3nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFD5C478NWFT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8 Type of transistor: N-MOSFET x2 Drain-source voltage: 40V Drain current: 27A Power dissipation: 12W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 90A Polarisation: unipolar Gate charge: 6.3nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74LCX16244DTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Type of integrated circuit: digital Case: TSSOP48 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Number of channels: 16 Kind of output: 3-state Kind of integrated circuit: buffer; line driver; non-inverting Manufacturer series: LCX |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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FDT86244 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223 Kind of channel: enhancement Case: SOT223 Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 4.9nC On-state resistance: 128mΩ Power dissipation: 2.2W Drain current: 2.8A Pulsed drain current: 12A Drain-source voltage: 150V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
| FDC86244 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W Kind of channel: enhancement Case: SuperSOT-6 Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 6nC On-state resistance: 273mΩ Power dissipation: 1.6W Drain current: 2.3A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 150V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FDA032N08 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN Case: TO3PN Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 0.22µC On-state resistance: 3.2mΩ Power dissipation: 37.5W Drain current: 120A Gate-source voltage: ±20V Pulsed drain current: 940A Drain-source voltage: 70V Kind of channel: enhancement |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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FNA41560B2 | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; 15A; Uoper: 600V; Uinsul: 2kV; 41W Type of integrated circuit: driver Output current: 15A Mounting: THT Operating temperature: -40...150°C Operating voltage: 600V Insulation voltage: 2kV Power dissipation: 41W |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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CPH6153-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 3A; 1.3W; SOT26 Mounting: SMD Collector-emitter voltage: 20V Case: SOT26 Collector current: 3A Power dissipation: 1.3W Current gain: 200...560 Frequency: 400MHz Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ4679T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 2V; SMD; SOD123; reel,tape; single diode Tolerance: ±5% Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 2V Type of diode: Zener |
на замовлення 4500 шт: термін постачання 14-30 дні (днів) |
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| NSBA124EDXV6T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 60...100 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA124EF3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Current gain: 60...100 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA124XDXV6T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...130 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA124XF3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Current gain: 80...130 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14015BDR2G | ONSEMI |
Category: Shift registersDescription: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B Technology: CMOS Number of inputs: 3 Kind of package: reel; tape Case: SOIC16 Family: HEF4000B Kind of integrated circuit: 4bit; shift register Number of channels: 2 Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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CS51414EDR8G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uout: 4.5÷40V; 1.5A; SO8; SMD; 520kHz; Ch: 1 Type of integrated circuit: PMIC Mounting: SMD Case: SO8 Number of channels: 1 Output current: 1.5A Output voltage: 4.5...40V Frequency: 520kHz Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: DC/DC converter |
на замовлення 2061 шт: термін постачання 14-30 дні (днів) |
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| BAS16TT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 0.5A Case: SOT416 Max. forward voltage: 1.25V Power dissipation: 0.36W Reverse recovery time: 6ns Capacitance: 2pF Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBAS16TT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: SC75 Max. forward voltage: 1V Application: automotive industry Reverse recovery time: 6ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FES10G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 10A; Ifsm: 150A; TO277; reel,tape; 40ns Type of diode: rectifying Case: TO277 Mounting: THT Max. off-state voltage: 0.4kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 150A Kind of package: reel; tape Reverse recovery time: 40ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FES10D | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10A; Ifsm: 150A; TO277; reel,tape; 40ns Type of diode: rectifying Case: TO277 Mounting: THT Max. off-state voltage: 200V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 150A Kind of package: reel; tape Reverse recovery time: 40ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FES10J | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; Ifsm: 150A; TO277; reel,tape; 30ns Type of diode: rectifying Case: TO277 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 150A Kind of package: reel; tape Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJH11019G | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Kind of transistor: Darlington Mounting: THT Type of transistor: PNP Case: TO247-3 Kind of package: tube Collector current: 15A Frequency: 3MHz Power dissipation: 150W Collector-emitter voltage: 200V Polarisation: bipolar |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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FDC6301N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD8880 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 58A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 1250 шт: термін постачання 14-30 дні (днів) |
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ES1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.47W Leakage current: 0.1mA Capacitance: 10pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FSV12120V | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277; SMD; 120V; 12A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 120V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.79V Max. forward impulse current: 220A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDN304P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3067 шт: термін постачання 14-30 дні (днів) |
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FDN304PZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 2072 шт: термін постачання 14-30 дні (днів) |
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FDC6312P | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Kind of package: reel; tape Mounting: SMD Drain-source voltage: -20V Drain current: -2.3A On-state resistance: 0.15Ω Power dissipation: 0.96W Gate-source voltage: ±8V Polarisation: unipolar |
на замовлення 2474 шт: термін постачання 14-30 дні (днів) |
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| NTBG040N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 240A Power dissipation: 178W Gate charge: 106nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 43A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.1Ω |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
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1N5358BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 22V Kind of package: bulk Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N5358BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 22V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDP083N15A-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3 Mounting: THT Power dissipation: 294W Polarisation: unipolar Drain current: 83A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 8.3mΩ |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
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| NTTFS8D1N08HTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 61A; Idm: 216A; 63W; WDFN8 Mounting: SMD Pulsed drain current: 216A Power dissipation: 63W Gate charge: 23nC Polarisation: unipolar Drain current: 61A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 8.3mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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EGP10C | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 1A; reel,tape; Ifsm: 30A; DO41; 50ns Kind of package: reel; tape Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Case: DO41 Type of diode: rectifying Reverse recovery time: 50ns Mounting: THT Max. forward impulse current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP1253BSN100T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 92...108kHz Mounting: SMD Case: TSOP6 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP1256ASN100T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Case: TSOP6 Kind of integrated circuit: AC/DC switcher; PWM controller Number of channels: 1 Frequency: 93...107kHz Operating voltage: 8.9...26V DC Topology: flyback Mounting: SMD Output current: -0.5...0.5A Type of integrated circuit: PMIC Operating temperature: -40...125°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NVMFD5C668NLT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8 Mounting: SMD Case: DFN8 Kind of package: reel; tape Pulsed drain current: 454A Power dissipation: 29W Gate charge: 21.3nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 6.5mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFD5C668NLWFT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8 Mounting: SMD Case: DFN8 Kind of package: reel; tape Pulsed drain current: 454A Power dissipation: 29W Gate charge: 21.3nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 6.5mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP711BMT300TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; WDFN6; SMD; Ch: 1 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.1A Type of integrated circuit: voltage regulator Output voltage: 3V Kind of package: reel; tape Case: WDFN6 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP711ASNADJT1G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA Mounting: SMD Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: NCP711 Input voltage: 2.7...18V Output current: 0.1A Type of integrated circuit: voltage regulator Voltage drop: 0.355V Operating temperature: -40...125°C Output voltage: 1.2...17V Case: TSOP5 Number of channels: 1 Tolerance: ±1% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP711BMT330TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; WDFN6; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP711 Input voltage: 2.7...18V Output current: 0.1A Type of integrated circuit: voltage regulator Voltage drop: 0.355V Operating temperature: -40...125°C Output voltage: 3.3V Case: WDFN6 Number of channels: 1 Tolerance: ±1% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP711BMTADJTBG | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA Mounting: SMD Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: NCP711 Input voltage: 2.7...18V Output current: 0.1A Type of integrated circuit: voltage regulator Voltage drop: 0.355V Operating temperature: -40...125°C Output voltage: 1.2...17V Case: WDFN6 Number of channels: 1 Tolerance: ±1% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP711ASN330T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; TSOP5; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP711 Input voltage: 2.7...18V Output current: 0.1A Type of integrated circuit: voltage regulator Voltage drop: 0.355V Operating temperature: -40...125°C Output voltage: 3.3V Case: TSOP5 Number of channels: 1 Tolerance: ±1% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP711BMT500TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; WDFN6; SMD; Ch: 1 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.1A Type of integrated circuit: voltage regulator Output voltage: 5V Kind of package: reel; tape Case: WDFN6 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCW70LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Collector-emitter voltage: 45V Power dissipation: 0.225W Polarisation: bipolar Type of transistor: PNP Current gain: 215...500 Kind of package: reel; tape Collector current: 0.1A |
на замовлення 342 шт: термін постачання 14-30 дні (днів) |
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1SMA5927BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 468 шт: термін постачання 14-30 дні (днів) |
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SZ1SMA5927BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SMA5921BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 6.8V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 3264 шт: термін постачання 14-30 дні (днів) |
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1SMA5918BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 5.1V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G |
на замовлення 4658 шт: термін постачання 14-30 дні (днів) |
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1SMA5913BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 3.3V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 1557 шт: термін постачання 14-30 дні (днів) |
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1SMA5919BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 5.6V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 4022 шт: термін постачання 14-30 дні (днів) |
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1SMA5937BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 33V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 292 шт: термін постачання 14-30 дні (днів) |
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1SMA5915BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 3.9V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 4990 шт: термін постачання 14-30 дні (днів) |
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1SMA5922BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 7.5V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 1225 шт: термін постачання 14-30 дні (днів) |
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1SMA5930BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 16V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 3905 шт: термін постачання 14-30 дні (днів) |
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1SMA5923BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 8.2V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 4340 шт: термін постачання 14-30 дні (днів) |
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1SMA5933BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 22V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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1SMA5932BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 20V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 1500 шт: термін постачання 14-30 дні (днів) |
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1SMA5935BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 27V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 3977 шт: термін постачання 14-30 дні (днів) |
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| FDD9409-F085 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NVMFD5C478NT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8
Type of transistor: N-MOSFET x2
Drain-source voltage: 40V
Drain current: 27A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 90A
Polarisation: unipolar
Gate charge: 6.3nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8
Type of transistor: N-MOSFET x2
Drain-source voltage: 40V
Drain current: 27A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 90A
Polarisation: unipolar
Gate charge: 6.3nC
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В кошику
од. на суму грн.
| NVMFD5C478NWFT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8
Type of transistor: N-MOSFET x2
Drain-source voltage: 40V
Drain current: 27A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 90A
Polarisation: unipolar
Gate charge: 6.3nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8
Type of transistor: N-MOSFET x2
Drain-source voltage: 40V
Drain current: 27A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 90A
Polarisation: unipolar
Gate charge: 6.3nC
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В кошику
од. на суму грн.
| MC74LCX16244DTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Type of integrated circuit: digital
Case: TSSOP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Number of channels: 16
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Type of integrated circuit: digital
Case: TSSOP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Number of channels: 16
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Manufacturer series: LCX
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 83.10 грн |
| FDT86244 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223
Kind of channel: enhancement
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 4.9nC
On-state resistance: 128mΩ
Power dissipation: 2.2W
Drain current: 2.8A
Pulsed drain current: 12A
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223
Kind of channel: enhancement
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 4.9nC
On-state resistance: 128mΩ
Power dissipation: 2.2W
Drain current: 2.8A
Pulsed drain current: 12A
Drain-source voltage: 150V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| FDC86244 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of channel: enhancement
Case: SuperSOT-6
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Drain current: 2.3A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of channel: enhancement
Case: SuperSOT-6
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Drain current: 2.3A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 150V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDA032N08 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Case: TO3PN
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 0.22µC
On-state resistance: 3.2mΩ
Power dissipation: 37.5W
Drain current: 120A
Gate-source voltage: ±20V
Pulsed drain current: 940A
Drain-source voltage: 70V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Case: TO3PN
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 0.22µC
On-state resistance: 3.2mΩ
Power dissipation: 37.5W
Drain current: 120A
Gate-source voltage: ±20V
Pulsed drain current: 940A
Drain-source voltage: 70V
Kind of channel: enhancement
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 321.26 грн |
| 10+ | 246.80 грн |
| FNA41560B2 |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; 15A; Uoper: 600V; Uinsul: 2kV; 41W
Type of integrated circuit: driver
Output current: 15A
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 41W
Category: MOSFET/IGBT drivers
Description: IC: driver; 15A; Uoper: 600V; Uinsul: 2kV; 41W
Type of integrated circuit: driver
Output current: 15A
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 41W
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1312.80 грн |
| 3+ | 1076.93 грн |
| CPH6153-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 3A; 1.3W; SOT26
Mounting: SMD
Collector-emitter voltage: 20V
Case: SOT26
Collector current: 3A
Power dissipation: 1.3W
Current gain: 200...560
Frequency: 400MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 3A; 1.3W; SOT26
Mounting: SMD
Collector-emitter voltage: 20V
Case: SOT26
Collector current: 3A
Power dissipation: 1.3W
Current gain: 200...560
Frequency: 400MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| MMSZ4679T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 2V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 2V
Type of diode: Zener
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.05 грн |
| 70+ | 5.98 грн |
| 84+ | 4.99 грн |
| 130+ | 3.21 грн |
| 159+ | 2.63 грн |
| 250+ | 2.04 грн |
| 500+ | 1.75 грн |
| 1000+ | 1.58 грн |
| 3000+ | 1.51 грн |
| NSBA124EDXV6T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
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В кошику
од. на суму грн.
| NSBA124EF3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товару немає в наявності
В кошику
од. на суму грн.
| NSBA124XDXV6T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...130
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...130
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
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В кошику
од. на суму грн.
| NSBA124XF3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...130
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...130
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
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од. на суму грн.
| MC14015BDR2G |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: 4bit; shift register
Number of channels: 2
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: 4bit; shift register
Number of channels: 2
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
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Мінімальне замовлення: 2500 шт
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| CS51414EDR8G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 4.5÷40V; 1.5A; SO8; SMD; 520kHz; Ch: 1
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO8
Number of channels: 1
Output current: 1.5A
Output voltage: 4.5...40V
Frequency: 520kHz
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 4.5÷40V; 1.5A; SO8; SMD; 520kHz; Ch: 1
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO8
Number of channels: 1
Output current: 1.5A
Output voltage: 4.5...40V
Frequency: 520kHz
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
на замовлення 2061 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.34 грн |
| 10+ | 100.55 грн |
| 25+ | 93.07 грн |
| 50+ | 91.41 грн |
| BAS16TT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT416
Max. forward voltage: 1.25V
Power dissipation: 0.36W
Reverse recovery time: 6ns
Capacitance: 2pF
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT416
Max. forward voltage: 1.25V
Power dissipation: 0.36W
Reverse recovery time: 6ns
Capacitance: 2pF
Leakage current: 50µA
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| NSVBAS16TT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
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| FES10G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; Ifsm: 150A; TO277; reel,tape; 40ns
Type of diode: rectifying
Case: TO277
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; Ifsm: 150A; TO277; reel,tape; 40ns
Type of diode: rectifying
Case: TO277
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Reverse recovery time: 40ns
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| FES10D |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; Ifsm: 150A; TO277; reel,tape; 40ns
Type of diode: rectifying
Case: TO277
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; Ifsm: 150A; TO277; reel,tape; 40ns
Type of diode: rectifying
Case: TO277
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Reverse recovery time: 40ns
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| FES10J |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; Ifsm: 150A; TO277; reel,tape; 30ns
Type of diode: rectifying
Case: TO277
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; Ifsm: 150A; TO277; reel,tape; 30ns
Type of diode: rectifying
Case: TO277
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Reverse recovery time: 30ns
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| MJH11019G |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Mounting: THT
Type of transistor: PNP
Case: TO247-3
Kind of package: tube
Collector current: 15A
Frequency: 3MHz
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Mounting: THT
Type of transistor: PNP
Case: TO247-3
Kind of package: tube
Collector current: 15A
Frequency: 3MHz
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 311.61 грн |
| 10+ | 239.32 грн |
| 20+ | 208.57 грн |
| FDC6301N |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
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| FDD8880 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 1250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 73.74 грн |
| 10+ | 63.40 грн |
| 50+ | 46.70 грн |
| 100+ | 39.80 грн |
| 500+ | 28.92 грн |
| ES1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.47W
Leakage current: 0.1mA
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.47W
Leakage current: 0.1mA
Capacitance: 10pF
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| FSV12120V |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 220A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 220A
Kind of package: reel; tape
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| FDN304P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3067 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.90 грн |
| 11+ | 40.22 грн |
| 12+ | 35.32 грн |
| 50+ | 24.85 грн |
| 100+ | 21.44 грн |
| 500+ | 15.71 грн |
| 1000+ | 13.79 грн |
| 1500+ | 12.96 грн |
| 3000+ | 11.72 грн |
| FDN304PZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2072 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.85 грн |
| 13+ | 32.66 грн |
| 50+ | 24.10 грн |
| 100+ | 21.36 грн |
| 500+ | 17.45 грн |
| FDC6312P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: -20V
Drain current: -2.3A
On-state resistance: 0.15Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: -20V
Drain current: -2.3A
On-state resistance: 0.15Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Polarisation: unipolar
на замовлення 2474 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.64 грн |
| 8+ | 56.34 грн |
| 10+ | 49.69 грн |
| 50+ | 36.81 грн |
| 100+ | 32.32 грн |
| 500+ | 23.77 грн |
| 1000+ | 23.18 грн |
| NTBG040N120SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 240A
Power dissipation: 178W
Gate charge: 106nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 240A
Power dissipation: 178W
Gate charge: 106nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
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Мінімальне замовлення: 800 шт
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| 1N5358BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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| 1N5358BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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| FDP083N15A-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Mounting: THT
Power dissipation: 294W
Polarisation: unipolar
Drain current: 83A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 8.3mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Mounting: THT
Power dissipation: 294W
Polarisation: unipolar
Drain current: 83A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 8.3mΩ
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 377.64 грн |
| 5+ | 259.26 грн |
| 10+ | 230.18 грн |
| NTTFS8D1N08HTAG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 61A; Idm: 216A; 63W; WDFN8
Mounting: SMD
Pulsed drain current: 216A
Power dissipation: 63W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 8.3mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 61A; Idm: 216A; 63W; WDFN8
Mounting: SMD
Pulsed drain current: 216A
Power dissipation: 63W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 8.3mΩ
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| EGP10C |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 1A; reel,tape; Ifsm: 30A; DO41; 50ns
Kind of package: reel; tape
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Type of diode: rectifying
Reverse recovery time: 50ns
Mounting: THT
Max. forward impulse current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 1A; reel,tape; Ifsm: 30A; DO41; 50ns
Kind of package: reel; tape
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Type of diode: rectifying
Reverse recovery time: 50ns
Mounting: THT
Max. forward impulse current: 30A
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| NCP1253BSN100T1G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
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Мінімальне замовлення: 3000 шт
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| NCP1256ASN100T1G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Case: TSOP6
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 93...107kHz
Operating voltage: 8.9...26V DC
Topology: flyback
Mounting: SMD
Output current: -0.5...0.5A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Case: TSOP6
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 93...107kHz
Operating voltage: 8.9...26V DC
Topology: flyback
Mounting: SMD
Output current: -0.5...0.5A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
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Мінімальне замовлення: 3000 шт
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| NVMFD5C668NLT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Pulsed drain current: 454A
Power dissipation: 29W
Gate charge: 21.3nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Pulsed drain current: 454A
Power dissipation: 29W
Gate charge: 21.3nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
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| NVMFD5C668NLWFT1G |
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Pulsed drain current: 454A
Power dissipation: 29W
Gate charge: 21.3nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Pulsed drain current: 454A
Power dissipation: 29W
Gate charge: 21.3nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
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| NCP711BMT300TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; WDFN6; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Output voltage: 3V
Kind of package: reel; tape
Case: WDFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; WDFN6; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Output voltage: 3V
Kind of package: reel; tape
Case: WDFN6
Number of channels: 1
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| NCP711ASNADJT1G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 1.2...17V
Case: TSOP5
Number of channels: 1
Tolerance: ±1%
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 1.2...17V
Case: TSOP5
Number of channels: 1
Tolerance: ±1%
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| NCP711BMT330TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; WDFN6; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: WDFN6
Number of channels: 1
Tolerance: ±1%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; WDFN6; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: WDFN6
Number of channels: 1
Tolerance: ±1%
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| NCP711BMTADJTBG |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 1.2...17V
Case: WDFN6
Number of channels: 1
Tolerance: ±1%
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 1.2...17V
Case: WDFN6
Number of channels: 1
Tolerance: ±1%
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| NCP711ASN330T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; TSOP5; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: TSOP5
Number of channels: 1
Tolerance: ±1%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; TSOP5; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: TSOP5
Number of channels: 1
Tolerance: ±1%
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| NCP711BMT500TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; WDFN6; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Output voltage: 5V
Kind of package: reel; tape
Case: WDFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; WDFN6; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Output voltage: 5V
Kind of package: reel; tape
Case: WDFN6
Number of channels: 1
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| BCW70LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.225W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 215...500
Kind of package: reel; tape
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.225W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 215...500
Kind of package: reel; tape
Collector current: 0.1A
на замовлення 342 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.74 грн |
| 60+ | 6.98 грн |
| 89+ | 4.69 грн |
| 105+ | 3.96 грн |
| 1SMA5927BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 468 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.22 грн |
| 25+ | 16.79 грн |
| 28+ | 15.21 грн |
| 50+ | 12.30 грн |
| 100+ | 11.22 грн |
| 250+ | 9.97 грн |
| SZ1SMA5927BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| 1SMA5921BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.8V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.8V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 3264 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.37 грн |
| 24+ | 17.45 грн |
| 28+ | 14.96 грн |
| 50+ | 9.47 грн |
| 100+ | 8.14 грн |
| 250+ | 7.15 грн |
| 500+ | 6.73 грн |
| 1SMA5918BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
на замовлення 4658 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.32 грн |
| 25+ | 16.87 грн |
| 50+ | 10.97 грн |
| 100+ | 9.47 грн |
| 250+ | 8.06 грн |
| 500+ | 7.31 грн |
| 1000+ | 7.06 грн |
| 1SMA5913BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.3V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.3V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 1557 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.85 грн |
| 33+ | 12.71 грн |
| 50+ | 9.81 грн |
| 100+ | 9.06 грн |
| 200+ | 8.39 грн |
| 250+ | 8.23 грн |
| 500+ | 7.64 грн |
| 1000+ | 7.06 грн |
| 1SMA5919BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 4022 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.53 грн |
| 27+ | 15.95 грн |
| 50+ | 12.46 грн |
| 100+ | 11.22 грн |
| 250+ | 9.81 грн |
| 500+ | 8.73 грн |
| 1000+ | 7.48 грн |
| 3000+ | 6.65 грн |
| 1SMA5937BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 33V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 33V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 292 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.11 грн |
| 18+ | 23.77 грн |
| 21+ | 20.52 грн |
| 50+ | 14.62 грн |
| 100+ | 12.63 грн |
| 250+ | 10.47 грн |
| 1SMA5915BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.9V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.9V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 4990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.11 грн |
| 23+ | 18.86 грн |
| 50+ | 13.13 грн |
| 100+ | 11.38 грн |
| 250+ | 9.64 грн |
| 500+ | 8.48 грн |
| 1000+ | 7.56 грн |
| 3000+ | 6.40 грн |
| 1SMA5922BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 1225 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.11 грн |
| 20+ | 21.44 грн |
| 23+ | 18.53 грн |
| 50+ | 13.38 грн |
| 100+ | 11.72 грн |
| 250+ | 9.97 грн |
| 500+ | 8.81 грн |
| 1000+ | 7.81 грн |
| 1SMA5930BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 3905 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 52+ | 8.14 грн |
| 54+ | 7.73 грн |
| 100+ | 6.90 грн |
| 250+ | 6.48 грн |
| 500+ | 5.90 грн |
| 1000+ | 5.32 грн |
| 1SMA5923BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 8.2V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 8.2V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 4340 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.64 грн |
| 28+ | 15.29 грн |
| 50+ | 11.05 грн |
| 100+ | 9.81 грн |
| 250+ | 8.73 грн |
| 500+ | 7.98 грн |
| 1000+ | 7.31 грн |
| 3000+ | 6.40 грн |
| 1SMA5933BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 22V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 22V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.48 грн |
| 1SMA5932BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 1500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.11 грн |
| 20+ | 20.77 грн |
| 50+ | 14.38 грн |
| 100+ | 12.30 грн |
| 250+ | 10.22 грн |
| 500+ | 8.89 грн |
| 1000+ | 7.89 грн |
| 1SMA5935BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 27V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 27V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 3977 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.74 грн |
| 28+ | 15.29 грн |
| 50+ | 11.63 грн |
| 100+ | 10.64 грн |
| 250+ | 9.56 грн |
| 500+ | 8.73 грн |
| 1000+ | 7.73 грн |
| 2000+ | 6.81 грн |




























