Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13451) > Сторінка 213 з 225
Фото | Назва | Виробник | Інформація |
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TK33S10N1L,LQ | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V |
на замовлення 97 шт: термін постачання 21-31 дні (днів) |
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CMS16(TE12L,Q,M) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CMS16(TE12L,Q,M) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 1843 шт: термін постачання 21-31 дні (днів) |
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TPCP8J01(TE85L,F,M | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 32V 5.5A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V Power Dissipation (Max): 2.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PS-8 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 32 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TK10A80W,S4X | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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TCR3UG1825A,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 0.68 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.825V Control Features: Current Limit, Enable PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR3UG1825A,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 0.68 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.825V Control Features: Current Limit, Enable PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK321G,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Features: Slew Rate Controlled, Status Flag Package / Case: 16-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 98mOhm Voltage - Load: 2.3V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 2:1 Supplier Device Package: 16-WCSPC (1.9x1.9) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCK321G,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Features: Slew Rate Controlled, Status Flag Package / Case: 16-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 98mOhm Voltage - Load: 2.3V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 2:1 Supplier Device Package: 16-WCSPC (1.9x1.9) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
на замовлення 4939 шт: термін постачання 21-31 дні (днів) |
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TK042N65Z5,S1F | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.85mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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TTC501,LF(B | Toshiba Semiconductor and Storage |
Description: TRANSISTOR FOR LF SMALL-SIGNAL A Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V Supplier Device Package: SOT-23F Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TTC501,LF(B | Toshiba Semiconductor and Storage |
Description: TRANSISTOR FOR LF SMALL-SIGNAL A Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V Supplier Device Package: SOT-23F Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TC74VHC244F(EL,K,F | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V 20SOP Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC74VHC244F(EL,K,F | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V 20SOP Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCTH011AE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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TCTH011AE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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TCTH022AE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 17µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TCTH022AE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 17µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 7992 шт: термін постачання 21-31 дні (днів) |
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TCTH012BE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 17µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TCTH012BE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 17µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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TCTH012AE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 17µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TCTH012AE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 17µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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TCTH021AE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TCTH021AE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 7977 шт: термін постачання 21-31 дні (днів) |
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TCTH022BE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Thermal Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TCTH022BE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Thermal Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 7979 шт: термін постачання 21-31 дні (днів) |
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TCTH011BE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TCTH011BE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 7975 шт: термін постачання 21-31 дні (днів) |
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TCTH021BE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Thermal Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TCTH021BE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Thermal Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 7910 шт: термін постачання 21-31 дні (днів) |
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TC78B004AFTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 100mA Interface: PWM Operating Temperature: -30°C ~ 85°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 10V ~ 28V Applications: General Purpose Technology: NMOS Supplier Device Package: 40-WQFN (6x6) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TC78B004AFTG,EL | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 100mA Interface: PWM Operating Temperature: -30°C ~ 85°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 10V ~ 28V Applications: General Purpose Technology: NMOS Supplier Device Package: 40-WQFN (6x6) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN2313,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2313,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TK8S06K3L(T6L1,NQ) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TK8S06K3L(T6L1,NQ) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V |
на замовлення 3738 шт: термін постачання 21-31 дні (днів) |
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TK7S10N1Z,LXHQ | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TK7S10N1Z,LXHQ | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2886 шт: термін постачання 21-31 дні (днів) |
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TK7A80W,S4X | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TK25A20D,S5X | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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MN07ACA12T | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Memory Size: 12TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 60°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RN2407,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RN2407,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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SSM10N961L,ELF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-XFLGA, CSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 880mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TCSPAG-341501 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SSM10N961L,ELF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 10-XFLGA, CSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 880mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TCSPAG-341501 |
на замовлення 8995 шт: термін постачання 21-31 дні (днів) |
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TCR3DG285,LF | Toshiba Semiconductor and Storage |
Description: PB-F CMOS POINT DDRULATOR (SINGL Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 2.85V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.235V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR3DG285,LF | Toshiba Semiconductor and Storage |
Description: PB-F CMOS POINT DDRULATOR (SINGL Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 2.85V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.235V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR3DG28,LF | Toshiba Semiconductor and Storage |
Description: PB-F CMOS POINT DDRULATOR (SINGL Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.235V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR3DG28,LF | Toshiba Semiconductor and Storage |
Description: PB-F CMOS POINT DDRULATOR (SINGL Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.235V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TK095N65Z5,S1F | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.27mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V |
на замовлення 195 шт: термін постачання 21-31 дні (днів) |
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SSM6N39TU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SSM6N39TU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TLP716(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLP716F(ABB-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLP716F(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLP716F(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLP716(D4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLP716(D4-MBS-TP,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLP716F(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLP2768B(D4LF4,E(T | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.57V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 14ns, 1ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 25 mA |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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TK33S10N1L,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 192.92 грн |
10+ | 119.72 грн |
CMS16(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 3A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
CMS16(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 3A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 1843 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.92 грн |
10+ | 38.45 грн |
100+ | 28.61 грн |
500+ | 20.73 грн |
1000+ | 18.76 грн |
TPCP8J01(TE85L,F,M |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 32V 5.5A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 32 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
Description: MOSFET P-CH 32V 5.5A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 32 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
TK10A80W,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 9.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
Description: MOSFET N-CH 800V 9.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 200.06 грн |
TCR3UG1825A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 8.97 грн |
TCR3UG1825A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.34 грн |
12+ | 26.22 грн |
25+ | 23.97 грн |
100+ | 16.74 грн |
250+ | 15.17 грн |
500+ | 12.56 грн |
1000+ | 9.26 грн |
2500+ | 8.49 грн |
TCK321G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
товару немає в наявності
В кошику
од. на суму грн.
TCK321G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
на замовлення 4939 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.59 грн |
10+ | 90.74 грн |
25+ | 86.17 грн |
100+ | 66.41 грн |
250+ | 62.08 грн |
500+ | 54.86 грн |
1000+ | 42.60 грн |
2500+ | 39.76 грн |
TK042N65Z5,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: 650V DTMOS6 HSD 42MOHM TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.85mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V
Description: 650V DTMOS6 HSD 42MOHM TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.85mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1013.80 грн |
30+ | 595.08 грн |
TTC501,LF(B |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.66 грн |
6000+ | 6.97 грн |
TTC501,LF(B |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 34.93 грн |
13+ | 25.00 грн |
25+ | 22.57 грн |
100+ | 14.62 грн |
250+ | 12.31 грн |
500+ | 10.01 грн |
1000+ | 7.57 грн |
TC74VHC244F(EL,K,F |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
товару немає в наявності
В кошику
од. на суму грн.
TC74VHC244F(EL,K,F |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
товару немає в наявності
В кошику
од. на суму грн.
TCTH011AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 13.18 грн |
8000+ | 10.91 грн |
TCTH011AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.37 грн |
13+ | 25.08 грн |
14+ | 21.94 грн |
25+ | 19.34 грн |
50+ | 18.02 грн |
100+ | 15.32 грн |
500+ | 14.04 грн |
TCTH022AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 13.78 грн |
TCTH022AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 7992 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.34 грн |
12+ | 26.91 грн |
13+ | 25.00 грн |
25+ | 21.32 грн |
50+ | 19.80 грн |
100+ | 18.40 грн |
500+ | 15.26 грн |
1000+ | 14.18 грн |
TCTH012BE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 13.71 грн |
TCTH012BE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.37 грн |
13+ | 25.08 грн |
14+ | 21.94 грн |
25+ | 19.34 грн |
50+ | 18.02 грн |
100+ | 15.32 грн |
500+ | 14.04 грн |
TCTH012AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 13.71 грн |
TCTH012AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.37 грн |
13+ | 25.08 грн |
14+ | 21.94 грн |
25+ | 19.34 грн |
50+ | 18.02 грн |
100+ | 15.32 грн |
500+ | 14.04 грн |
TCTH021AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 10.18 грн |
TCTH021AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 7977 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.34 грн |
12+ | 26.91 грн |
13+ | 25.00 грн |
25+ | 21.32 грн |
50+ | 19.80 грн |
100+ | 18.40 грн |
500+ | 15.26 грн |
1000+ | 14.18 грн |
TCTH022BE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 10.18 грн |
TCTH022BE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 7979 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.34 грн |
12+ | 26.91 грн |
13+ | 25.00 грн |
25+ | 21.32 грн |
50+ | 19.80 грн |
100+ | 18.40 грн |
500+ | 15.26 грн |
1000+ | 14.18 грн |
TCTH011BE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 13.71 грн |
TCTH011BE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 7975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.37 грн |
13+ | 25.08 грн |
14+ | 21.94 грн |
25+ | 19.34 грн |
50+ | 18.02 грн |
100+ | 15.32 грн |
500+ | 14.04 грн |
TCTH021BE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 10.18 грн |
TCTH021BE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: OVER TEMP DETECTION IC IPTCO: 10
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 7910 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.34 грн |
12+ | 26.91 грн |
13+ | 25.00 грн |
25+ | 21.32 грн |
50+ | 19.80 грн |
100+ | 18.40 грн |
500+ | 15.26 грн |
1000+ | 14.18 грн |
TC78B004AFTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: BRUSHLESS MOTOR CONTROLLER WITH
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: BRUSHLESS MOTOR CONTROLLER WITH
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 79.40 грн |
TC78B004AFTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: BRUSHLESS MOTOR CONTROLLER WITH
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: BRUSHLESS MOTOR CONTROLLER WITH
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -30°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 40-WQFN (6x6)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 169.10 грн |
10+ | 120.79 грн |
25+ | 110.30 грн |
100+ | 92.72 грн |
250+ | 87.57 грн |
500+ | 84.46 грн |
1000+ | 80.56 грн |
RN2313,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.21 грн |
RN2313,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.11 грн |
47+ | 6.57 грн |
100+ | 4.07 грн |
500+ | 2.77 грн |
1000+ | 2.43 грн |
TK8S06K3L(T6L1,NQ) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Description: MOSFET N-CH 60V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 37.61 грн |
TK8S06K3L(T6L1,NQ) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Description: MOSFET N-CH 60V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
на замовлення 3738 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 126.23 грн |
10+ | 78.82 грн |
100+ | 53.60 грн |
500+ | 40.29 грн |
1000+ | 36.85 грн |
TK7S10N1Z,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 26.40 грн |
TK7S10N1Z,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2886 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 65.10 грн |
10+ | 50.84 грн |
100+ | 37.40 грн |
500+ | 29.42 грн |
1000+ | 26.59 грн |
TK7A80W,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 204.03 грн |
50+ | 157.67 грн |
TK25A20D,S5X |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 181.01 грн |
MN07ACA12T |
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Виробник: Toshiba Semiconductor and Storage
Description: MN07 NAS B2B 12TB
Packaging: Bulk
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MN07 NAS B2B 12TB
Packaging: Bulk
Memory Size: 12TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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RN2407,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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RN2407,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.29 грн |
33+ | 9.48 грн |
100+ | 5.10 грн |
500+ | 3.76 грн |
1000+ | 2.61 грн |
SSM10N961L,ELF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 9A TCSPAG
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA, CSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TCSPAG-341501
Description: MOSFET 2N-CH 30V 9A TCSPAG
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA, CSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TCSPAG-341501
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SSM10N961L,ELF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 9A TCSPAG
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA, CSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TCSPAG-341501
Description: MOSFET 2N-CH 30V 9A TCSPAG
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA, CSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TCSPAG-341501
на замовлення 8995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 95.27 грн |
10+ | 57.87 грн |
100+ | 38.21 грн |
500+ | 27.94 грн |
1000+ | 25.39 грн |
2000+ | 23.24 грн |
5000+ | 20.58 грн |
TCR3DG285,LF |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 7.57 грн |
TCR3DG285,LF |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.58 грн |
14+ | 22.09 грн |
25+ | 20.24 грн |
100+ | 14.13 грн |
250+ | 12.81 грн |
500+ | 10.60 грн |
1000+ | 7.82 грн |
2500+ | 7.17 грн |
TCR3DG28,LF |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 7.57 грн |
TCR3DG28,LF |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
Description: PB-F CMOS POINT DDRULATOR (SINGL
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.58 грн |
14+ | 22.09 грн |
25+ | 20.24 грн |
100+ | 14.13 грн |
250+ | 12.81 грн |
500+ | 10.60 грн |
1000+ | 7.82 грн |
2500+ | 7.17 грн |
TK095N65Z5,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: 650V DTMOS6-HIGH SPEED DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
Description: 650V DTMOS6-HIGH SPEED DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 558.11 грн |
30+ | 328.98 грн |
120+ | 277.12 грн |
SSM6N39TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2N-CH 20V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
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SSM6N39TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2N-CH 20V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
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TLP716(D4-TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
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TLP716F(ABB-TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
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TLP716F(D4-TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
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TLP716F(F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
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TLP716(D4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
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TLP716(D4-MBS-TP,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
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TLP716F(TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 10 mA
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TLP2768B(D4LF4,E(T |
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Виробник: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC COUPLER; ROHS,
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 14ns, 1ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: HIGH SPEED LOGIC COUPLER; ROHS,
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 14ns, 1ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 125 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 115.91 грн |
10+ | 70.94 грн |
100+ | 49.95 грн |