Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13529) > Сторінка 213 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TC7MPB9307FT(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 8 X 1:1 20TSSOP Supplier Device Package: 20-TSSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 8 x 1:1 Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TC7MPB9307FT(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 8 X 1:1 20TSSOP Supplier Device Package: 20-TSSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 8 x 1:1 Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 10708 шт: термін постачання 21-31 дні (днів) |
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TC7SPB9307TU,LF(CT | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 1 X 1:1 UF6Supplier Device Package: UF6 Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TC7SPB9307TU,LF(CT | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 1 X 1:1 UF6Supplier Device Package: UF6 Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2919 шт: термін постачання 21-31 дні (днів) |
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TLP3145(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-200VPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 400 mA Approval Agency: CSA, cUL, UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 2 Ohms |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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MKZ10V,LM(B | Toshiba Semiconductor and Storage |
Description: 10V ZENER DIODE, SOT23 PD (MAX): Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 60pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.5A (8/20µs) Voltage - Reverse Standoff (Typ): 8V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.4V Voltage - Clamping (Max) @ Ipp: 19V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MKZ10V,LM(B | Toshiba Semiconductor and Storage |
Description: 10V ZENER DIODE, SOT23 PD (MAX): Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 60pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.5A (8/20µs) Voltage - Reverse Standoff (Typ): 8V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.4V Voltage - Clamping (Max) @ Ipp: 19V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TPH2R805PL,LQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 830mW (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TPH2R805PL,LQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 830mW (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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74LCX541FT(AE) | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 3.6V 20TSSOPBSupplier Device Package: 20-TSSOPB Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74LCX541FT(AE) | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 3.6V 20TSSOPBSupplier Device Package: 20-TSSOPB Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 3867 шт: термін постачання 21-31 дні (днів) |
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| MG08SDP600A | Toshiba Semiconductor and Storage |
Description: HDD 6TB 3.5" SAS 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TPD4165K,F | Toshiba Semiconductor and Storage |
Description: 600V, IPD, 3A, HDIP30Motor Type - AC, DC: Brushless DC (BLDC) Motor Type - Stepper: Multiphase Supplier Device Package: 30-HDIP Voltage - Load: 50V ~ 450V Technology: IGBT Applications: General Purpose Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 135°C (TJ) Interface: PWM Current - Output: 3A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Through Hole Package / Case: 30-PowerDIP Module Packaging: Tube |
на замовлення 183 шт: термін постачання 21-31 дні (днів) |
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TC74VHC08F(EL,K,F) | Toshiba Semiconductor and Storage |
Description: IC GATE AND 4CH 2-INP 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SOP Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TC74VHC08FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC GATE AND 4CH 2-INP 14VSSOP Packaging: Tape & Reel (TR) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-VSSOP Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TC74VHC08FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC GATE AND 4CH 2-INP 14VSSOP Packaging: Cut Tape (CT) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-VSSOP Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC74VHC08FTELM | Toshiba Semiconductor and Storage |
Description: IC GATE AND 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC74VHC08FTELM | Toshiba Semiconductor and Storage |
Description: IC GATE AND 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TPH8R808QM,LQ | Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 109W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| TPH8R808QM,LQ | Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 109W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TK5P60W5,RVQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 230µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TK5P60W5,RVQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 230µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TK16G60W5,RVQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPAPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TK16G60W5,RVQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPAPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 1288 шт: термін постачання 21-31 дні (днів) |
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TK14V65W,LQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DTMPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 690µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TK14V65W,LQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DTMPackaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 690µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V |
на замовлення 2394 шт: термін постачання 21-31 дні (днів) |
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TK25V60X5,LQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DTMPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TK25V60X5,LQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DTMPackaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
на замовлення 2483 шт: термін постачання 21-31 дні (днів) |
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DCL540C01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (4:0) HIGH SPEED DIGITAL ISPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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DCL540C01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (4:0) HIGH SPEED DIGITAL ISPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
на замовлення 2935 шт: термін постачання 21-31 дні (днів) |
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DCL540L01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (4:0) HIGH SPEED DIGITAL ISPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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DCL540L01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (4:0) HIGH SPEED DIGITAL ISPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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DCL540H01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (4:0) HIGH SPEED DIGITAL ISPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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DCL540H01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (4:0) HIGH SPEED DIGITAL ISPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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DCL540D01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (4:0) HIGH SPEED DIGITAL ISPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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DCL540D01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (4:0) HIGH SPEED DIGITAL ISPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| TC62D776CFNAG,CEBH | Toshiba Semiconductor and Storage |
Description: IC LED DRIVERPackaging: Bulk Package / Case: 24-SSOP (0.154", 3.90mm Width) Voltage - Output: 17V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 85°C Applications: LED Lighting Current - Output / Channel: 90mA Internal Switch(s): No Topology: Shift Register Supplier Device Package: 24-SSOP Dimming: No Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TPH3R003PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 88A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TPH3R003PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 88A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.1V @ 300µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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TJ60S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAKInput Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TJ60S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAKPackage / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount |
на замовлення 2222 шт: термін постачання 21-31 дні (днів) |
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CMZ13(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 13V 2W MFLATTolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: M-FLAT (2.4x3.8) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 9 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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CMZ13(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 13V 2W MFLATTolerance: ±10% Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: M-FLAT (2.4x3.8) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 9 V |
на замовлення 1725 шт: термін постачання 21-31 дні (днів) |
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| MG04SCA40EA | Toshiba Semiconductor and Storage |
Description: HDD 4TB 3.5" SAS 5V/12VOperating Temperature: 5°C ~ 55°C Type: SAS Memory Type: Magnetic Disk (HDD) Memory Size: 4TB Size / Dimension: 147.00mm x 101.60mm x 26.10mm Packaging: Bulk Form Factor: 3.5" Voltage - Supply: 5V, 12V |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||
| MG04SCA60EA | Toshiba Semiconductor and Storage |
Description: HDD 6TB 3.5" SAS 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.60mm x 26.10mm Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||
| TOTX1350A(F) | Toshiba Semiconductor and Storage |
Description: XMITTER FIBER OPTIC 650NMPackaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TOTX1350A(V,F) | Toshiba Semiconductor and Storage |
Description: XMITTER FIBER OPTIC 650NMPackaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TORX1350A(V,F) | Toshiba Semiconductor and Storage |
Description: FIBER OPTIC RECEIVER 500KBPSPackaging: Tube Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Data Rate: 10Mbps Power - Minimum Receivable: -27dBm Current - Supply: 20 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLP3052A(D4,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Current - Hold (Ih): 600µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 2kV/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP3052AF(D4,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIPPackaging: Bulk Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Current - Hold (Ih): 600µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 2kV/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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7UL3G14FK,LF | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC SOT-765(US8) VCC:0.Features: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 3 Supplier Device Package: US8 Input Logic Level - High: 0.73V ~ 2.14V Input Logic Level - Low: 0.18V ~ 0.96V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL3G14FK,LF | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC SOT-765(US8) VCC:0.Features: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 3 Supplier Device Package: US8 Input Logic Level - High: 0.73V ~ 2.14V Input Logic Level - Low: 0.18V ~ 0.96V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
на замовлення 5435 шт: термін постачання 21-31 дні (днів) |
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| TCR1HF18B,LM(CT | Toshiba Semiconductor and Storage |
Description: 40V 150MA LDO LOW IQ 1UA SOT-25 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 1.6 µA Voltage - Input (Max): 36V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.8V Control Features: Current Limit, Enable PSRR: 60dB (1kHz) Voltage Dropout (Max): 1.06V @ 150mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| TCR1HF18B,LM(CT | Toshiba Semiconductor and Storage |
Description: 40V 150MA LDO LOW IQ 1UA SOT-25 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 1.6 µA Voltage - Input (Max): 36V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.8V Control Features: Current Limit, Enable PSRR: 60dB (1kHz) Voltage Dropout (Max): 1.06V @ 150mA Protection Features: Over Current, Over Temperature |
на замовлення 2945 шт: термін постачання 21-31 дні (днів) |
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TLP7830(D4-TP4,E | Toshiba Semiconductor and Storage |
Description: IC OP AMP ISOLATION SO8 Number of Channels: 1 Supplier Device Package: 8-SO Voltage Supply Source: Dual Supply Resolution (Bits): 16 b Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V Operating Temperature: -40°C ~ 105°C Data Interface: Serial Type: Modulator Mounting Type: Surface Mount Package / Case: 8-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLP3107(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3.3A 0-60VPackaging: Tube Package / Case: 6-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 3.3 A Supplier Device Package: 6-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 60 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TK065Z65Z,S1F | Toshiba Semiconductor and Storage |
Description: POWER MOSFET TRANSISTOR TO-247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.69mA Supplier Device Package: TO-247-4L(T) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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TC7SET00F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SMV Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TC7SET00F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SMV Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 2894 шт: термін постачання 21-31 дні (днів) |
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| TB67H481FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 50V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| TC7MPB9307FT(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Supplier Device Package: 20-TSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 8 x 1:1
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Supplier Device Package: 20-TSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 8 x 1:1
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 12.32 грн |
| 6000+ | 11.10 грн |
| 10000+ | 10.33 грн |
| TC7MPB9307FT(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Supplier Device Package: 20-TSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 8 x 1:1
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Supplier Device Package: 20-TSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 8 x 1:1
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 10708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.87 грн |
| 11+ | 28.73 грн |
| 25+ | 26.80 грн |
| 100+ | 20.12 грн |
| 250+ | 18.68 грн |
| 500+ | 15.81 грн |
| 1000+ | 12.01 грн |
| TC7SPB9307TU,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Supplier Device Package: UF6
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: IC BUS SWITCH 1 X 1:1 UF6
Supplier Device Package: UF6
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC7SPB9307TU,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Supplier Device Package: UF6
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: IC BUS SWITCH 1 X 1:1 UF6
Supplier Device Package: UF6
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2919 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 13+ | 23.21 грн |
| 25+ | 21.25 грн |
| 100+ | 14.84 грн |
| 250+ | 13.45 грн |
| 500+ | 11.13 грн |
| 1000+ | 8.21 грн |
| TLP3145(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 2 Ohms
Description: SSR RELAY SPST-NO 400MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 2 Ohms
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.94 грн |
| 10+ | 180.43 грн |
| 100+ | 141.83 грн |
| 500+ | 117.21 грн |
| 1000+ | 112.04 грн |
| MKZ10V,LM(B |
Виробник: Toshiba Semiconductor and Storage
Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.40 грн |
| 6000+ | 2.08 грн |
| MKZ10V,LM(B |
Виробник: Toshiba Semiconductor and Storage
Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 26+ | 11.86 грн |
| 27+ | 11.31 грн |
| 100+ | 6.07 грн |
| 250+ | 4.50 грн |
| 500+ | 3.74 грн |
| 1000+ | 2.50 грн |
| TPH2R805PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPH2R805PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.23 грн |
| 10+ | 90.14 грн |
| 100+ | 60.97 грн |
| 500+ | 45.47 грн |
| 1000+ | 41.70 грн |
| 74LCX541FT(AE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 12.78 грн |
| 74LCX541FT(AE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 3867 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.12 грн |
| 10+ | 33.43 грн |
| 25+ | 27.64 грн |
| 100+ | 19.73 грн |
| 250+ | 16.69 грн |
| 500+ | 14.81 грн |
| 1000+ | 13.03 грн |
| MG08SDP600A |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 6TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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| TPD4165K,F |
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Виробник: Toshiba Semiconductor and Storage
Description: 600V, IPD, 3A, HDIP30
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 30-HDIP
Voltage - Load: 50V ~ 450V
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 135°C (TJ)
Interface: PWM
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 30-PowerDIP Module
Packaging: Tube
Description: 600V, IPD, 3A, HDIP30
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: 30-HDIP
Voltage - Load: 50V ~ 450V
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 135°C (TJ)
Interface: PWM
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 30-PowerDIP Module
Packaging: Tube
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 482.77 грн |
| 15+ | 346.24 грн |
| 30+ | 327.78 грн |
| 105+ | 283.72 грн |
| TC74VHC08F(EL,K,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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Мінімальне замовлення: 2000 шт
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| TC74VHC08FK(EL,K) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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Мінімальне замовлення: 2500 шт
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| TC74VHC08FK(EL,K) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| TC74VHC08FTELM |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| TC74VHC08FTELM |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| TPH8R808QM,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TPH8R808QM,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| TK5P60W5,RVQ |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 37.37 грн |
| TK5P60W5,RVQ |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.66 грн |
| 10+ | 71.19 грн |
| 100+ | 55.35 грн |
| 500+ | 44.04 грн |
| 1000+ | 35.87 грн |
| TK16G60W5,RVQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 128.30 грн |
| TK16G60W5,RVQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 1288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 296.01 грн |
| 10+ | 188.19 грн |
| 100+ | 132.69 грн |
| 500+ | 120.62 грн |
| TK14V65W,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TK14V65W,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 2394 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 375.06 грн |
| 10+ | 240.43 грн |
| 100+ | 171.75 грн |
| 500+ | 133.72 грн |
| 1000+ | 130.03 грн |
| TK25V60X5,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TK25V60X5,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 2483 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 477.34 грн |
| 10+ | 310.05 грн |
| 100+ | 225.36 грн |
| 500+ | 181.43 грн |
| DCL540C01(T,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 204.67 грн |
| DCL540C01(T,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 457.20 грн |
| 10+ | 311.17 грн |
| 100+ | 254.88 грн |
| 500+ | 201.65 грн |
| DCL540L01(T,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 187.83 грн |
| DCL540L01(T,E |
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Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 410.70 грн |
| 10+ | 277.07 грн |
| 100+ | 216.08 грн |
| 500+ | 180.17 грн |
| DCL540H01(T,E |
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Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 204.67 грн |
| DCL540H01(T,E |
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Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 457.20 грн |
| 10+ | 311.17 грн |
| 100+ | 254.88 грн |
| 500+ | 201.65 грн |
| DCL540D01(T,E |
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Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 204.67 грн |
| DCL540D01(T,E |
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Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 457.20 грн |
| 10+ | 311.17 грн |
| 100+ | 254.88 грн |
| 500+ | 201.65 грн |
| TC62D776CFNAG,CEBH |
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Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRIVER
Packaging: Bulk
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C
Applications: LED Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Shift Register
Supplier Device Package: 24-SSOP
Dimming: No
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRIVER
Packaging: Bulk
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C
Applications: LED Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Shift Register
Supplier Device Package: 24-SSOP
Dimming: No
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
товару немає в наявності
В кошику
од. на суму грн.
| TPH3R003PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 88A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
Description: MOSFET N-CH 30V 88A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPH3R003PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 88A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 88A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.41 грн |
| 10+ | 59.62 грн |
| TJ60S04M3L(T6L1,NQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 40.83 грн |
| TJ60S04M3L(T6L1,NQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET P-CH 40V 60A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
на замовлення 2222 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.03 грн |
| 10+ | 86.93 грн |
| 100+ | 58.61 грн |
| 500+ | 43.63 грн |
| 1000+ | 39.97 грн |
| CMZ13(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CMZ13(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 10+ | 30.45 грн |
| 100+ | 21.18 грн |
| 500+ | 15.52 грн |
| 1000+ | 12.62 грн |
| MG04SCA40EA |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SAS 5V/12V
Operating Temperature: 5°C ~ 55°C
Type: SAS
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Description: HDD 4TB 3.5" SAS 5V/12V
Operating Temperature: 5°C ~ 55°C
Type: SAS
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MG04SCA60EA |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 6TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
Мінімальне замовлення: 20 шт
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| TORX1350A(V,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: FIBER OPTIC RECEIVER 500KBPS
Packaging: Tube
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Power - Minimum Receivable: -27dBm
Current - Supply: 20 mA
Description: FIBER OPTIC RECEIVER 500KBPS
Packaging: Tube
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Power - Minimum Receivable: -27dBm
Current - Supply: 20 mA
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| TLP3052A(D4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
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| TLP3052AF(D4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
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| 7UL3G14FK,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.72 грн |
| 7UL3G14FK,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
на замовлення 5435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.27 грн |
| 28+ | 10.89 грн |
| 31+ | 9.67 грн |
| 100+ | 7.77 грн |
| 250+ | 7.15 грн |
| 500+ | 6.77 грн |
| 1000+ | 6.35 грн |
| TCR1HF18B,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
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Мінімальне замовлення: 3000 шт
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| TCR1HF18B,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
на замовлення 2945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 12+ | 26.86 грн |
| 25+ | 24.57 грн |
| 100+ | 17.16 грн |
| 250+ | 15.55 грн |
| 500+ | 12.87 грн |
| 1000+ | 9.50 грн |
| TLP7830(D4-TP4,E |
Виробник: Toshiba Semiconductor and Storage
Description: IC OP AMP ISOLATION SO8
Number of Channels: 1
Supplier Device Package: 8-SO
Voltage Supply Source: Dual Supply
Resolution (Bits): 16 b
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Data Interface: Serial
Type: Modulator
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC OP AMP ISOLATION SO8
Number of Channels: 1
Supplier Device Package: 8-SO
Voltage Supply Source: Dual Supply
Resolution (Bits): 16 b
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Data Interface: Serial
Type: Modulator
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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| TLP3107(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.3A 0-60V
Packaging: Tube
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.3 A
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 60 mOhms
Description: SSR RELAY SPST-NO 3.3A 0-60V
Packaging: Tube
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.3 A
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 60 mOhms
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| TK065Z65Z,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TO-247-4L(T)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
Description: POWER MOSFET TRANSISTOR TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TO-247-4L(T)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 526.16 грн |
| 25+ | 404.95 грн |
| TC7SET00F,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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Мінімальне замовлення: 3000 шт
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| TC7SET00F,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.67 грн |
| 15+ | 20.82 грн |
| 25+ | 18.21 грн |
| 100+ | 11.06 грн |
| 250+ | 9.16 грн |
| 500+ | 7.33 грн |
| 1000+ | 5.52 грн |
| TB67H481FTG(O,EL) |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 68.50 грн |



















