Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 85 з 226
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TL2FL-LW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 3000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL2FL-NW0,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL2FL-NW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL2FL-WH1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS NEU WHITE 4000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-DW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 6500K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-LL1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 2700K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-LW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 3000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-NW0,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-NW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-WH1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS NEU WHITE 4000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1F2-DW0,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 6500K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1F2-NW0,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1F2-NW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1F2-WH1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS NEU WHITE 4000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1L2-DW0,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 6500K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1L2-LL1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 2700K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1L2-LW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 3000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1L2-NW0,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1L2-NW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1L2-WH1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS NEU WHITE 4000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL2FL-DW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 6500K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL2FL-LL1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 2700K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL2FL-LW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 3000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL2FL-NW0,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL2FL-NW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL2FL-WH1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS NEU WHITE 4000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-DW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 6500K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-LL1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 2700K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-LW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 3000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-NW0,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-NW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL3GB-WH1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS NEU WHITE 4000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1F2-DW0,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 6500K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1F2-NW0,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1F2-NW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TL1F2-WH1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS NEU WHITE 4000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPN4R303NL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 63A 8TSON |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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TPH4R003NL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 40A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 200µA Power Dissipation (Max): 1.6W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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TPN11006NL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 17A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TPN7R506NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSONPackage / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 700mW (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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TPH11006NL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 17A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 1.6W (Ta), 34W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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TPN13008NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 18A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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TPN4R303NL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 63A 8TSON |
на замовлення 24775 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TPH4R003NL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 40A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 1.6W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
на замовлення 4032 шт: термін постачання 21-31 дні (днів) |
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TPN11006NL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 17A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 8663 шт: термін постачання 21-31 дні (днів) |
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TPN7R506NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 700mW (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 7370 шт: термін постачання 21-31 дні (днів) |
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TPH11006NL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 17A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V Power Dissipation (Max): 1.6W (Ta), 34W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V |
на замовлення 29746 шт: термін постачання 21-31 дні (днів) |
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TPN13008NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 18A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V |
на замовлення 1758 шт: термін постачання 21-31 дні (днів) |
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TC74LCX125FTEL | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 3.6V 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TCR3DF30,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 300MA SMV |
на замовлення 612 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TCR3DF33,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 300MA SMVCurrent - Supply (Max): 78 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.25V @ 300mA PSRR: 70dB (1kHz) Part Status: Obsolete Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: SMV Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 65 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TCR3DF30,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 300MA SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TCR3DF33,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 300MA SMVVoltage Dropout (Max): 0.25V @ 300mA PSRR: 70dB (1kHz) Part Status: Obsolete Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: SMV Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 65 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Current - Supply (Max): 78 µA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1SS403,H3F | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 100MA USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 6590 шт: термін постачання 21-31 дні (днів) |
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1SV325,H3F | Toshiba Semiconductor and Storage |
Description: DIODE VARACTOR 10V ESCCapacitance Ratio: 4.3 Voltage - Peak Reverse (Max): 10 V Supplier Device Package: ESC Capacitance Ratio Condition: C1/C4 Capacitance @ Vr, F: 12pF @ 4V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: Single Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
на замовлення 10703 шт: термін постачання 21-31 дні (днів) |
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DSR01S30SC,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 100MA SC2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1SV325,H3F | Toshiba Semiconductor and Storage |
Description: DIODE VARACTOR 10V ESCCapacitance Ratio: 4.3 Voltage - Peak Reverse (Max): 10 V Supplier Device Package: ESC Capacitance Ratio Condition: C1/C4 Capacitance @ Vr, F: 12pF @ 4V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: Single Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DSR01S30SC,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 100MA SC2 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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SSM6N7002BFE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.2A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.1V @ 250µA Supplier Device Package: ES6 Part Status: Active |
на замовлення 33292 шт: термін постачання 21-31 дні (днів) |
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SSM6N7002BFE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.2A ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.1V @ 250µA Supplier Device Package: ES6 Part Status: Active |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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| TL2FL-LW1,L |
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Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL2FL-NW0,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL2FL-NW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL2FL-WH1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-DW1,L |
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Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-LL1,L |
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Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-LW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-NW0,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-NW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-WH1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1F2-DW0,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1F2-NW0,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1F2-NW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1F2-WH1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1L2-DW0,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1L2-LL1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1L2-LW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1L2-NW0,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1L2-NW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1L2-WH1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL2FL-DW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL2FL-LL1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL2FL-LW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL2FL-NW0,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL2FL-NW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL2FL-WH1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-DW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-LL1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-LW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-NW0,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-NW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL3GB-WH1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1F2-DW0,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1F2-NW0,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1F2-NW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1F2-WH1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TPN4R303NL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 63A 8TSON
Description: MOSFET N-CH 30V 63A 8TSON
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| TPH4R003NL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 40A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TPN11006NL,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 17A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 27.26 грн |
| 6000+ | 24.41 грн |
| TPN7R506NH,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 60V 26A 8TSON
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TPH11006NL,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 17A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 23.95 грн |
| TPN13008NH,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TPN4R303NL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 63A 8TSON
Description: MOSFET N-CH 30V 63A 8TSON
на замовлення 24775 шт:
термін постачання 21-31 дні (днів)
| TPH4R003NL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
на замовлення 4032 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.97 грн |
| 10+ | 66.89 грн |
| 100+ | 44.65 грн |
| 500+ | 32.96 грн |
| 1000+ | 30.08 грн |
| 2000+ | 29.29 грн |
| TPN11006NL,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 17A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 8663 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 106.02 грн |
| 10+ | 64.61 грн |
| 100+ | 43.07 грн |
| 500+ | 31.74 грн |
| 1000+ | 28.95 грн |
| TPN7R506NH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 7370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 111.55 грн |
| 10+ | 67.88 грн |
| 100+ | 45.31 грн |
| 500+ | 33.38 грн |
| 1000+ | 30.44 грн |
| 2000+ | 27.96 грн |
| TPH11006NL,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 29746 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.22 грн |
| 100+ | 27.82 грн |
| 500+ | 23.45 грн |
| 1000+ | 21.65 грн |
| TPN13008NH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
на замовлення 1758 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.60 грн |
| 10+ | 65.52 грн |
| 100+ | 43.71 грн |
| 500+ | 32.25 грн |
| 1000+ | 29.42 грн |
| TC74LCX125FTEL |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| TCR3DF30,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA SMV
Description: IC REG LINEAR 3V 300MA SMV
на замовлення 612 шт:
термін постачання 21-31 дні (днів)
| TCR3DF33,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA SMV
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 3.3V 300MA SMV
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TCR3DF30,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA SMV
Description: IC REG LINEAR 3V 300MA SMV
товару немає в наявності
В кошику
од. на суму грн.
| TCR3DF33,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA SMV
Voltage Dropout (Max): 0.25V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 300MA SMV
Voltage Dropout (Max): 0.25V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Current - Supply (Max): 78 µA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| 1SS403,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6590 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 28+ | 11.12 грн |
| 100+ | 6.91 грн |
| 500+ | 4.78 грн |
| 1000+ | 4.22 грн |
| 1SV325,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Capacitance Ratio: 4.3
Voltage - Peak Reverse (Max): 10 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: DIODE VARACTOR 10V ESC
Capacitance Ratio: 4.3
Voltage - Peak Reverse (Max): 10 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
на замовлення 10703 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.48 грн |
| 19+ | 16.91 грн |
| 100+ | 9.45 грн |
| 500+ | 7.26 грн |
| 1000+ | 6.05 грн |
| 2000+ | 5.98 грн |
| DSR01S30SC,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Description: DIODE SCHOTTKY 30V 100MA SC2
товару немає в наявності
В кошику
од. на суму грн.
| 1SV325,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Capacitance Ratio: 4.3
Voltage - Peak Reverse (Max): 10 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: DIODE VARACTOR 10V ESC
Capacitance Ratio: 4.3
Voltage - Peak Reverse (Max): 10 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 5.64 грн |
| 8000+ | 4.18 грн |
| DSR01S30SC,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Description: DIODE SCHOTTKY 30V 100MA SC2
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SSM6N7002BFE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 33292 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 31+ | 10.13 грн |
| 100+ | 6.32 грн |
| 500+ | 4.35 грн |
| 1000+ | 3.84 грн |
| 2000+ | 3.41 грн |
| SSM6N7002BFE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 3.27 грн |
| 8000+ | 2.84 грн |
| 12000+ | 2.67 грн |
| 20000+ | 2.34 грн |
| 28000+ | 2.24 грн |











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