Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13460) > Сторінка 83 з 225
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DF3A6.8LFU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USM |
на замовлення 473 шт: термін постачання 21-31 дні (днів) |
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DF3A6.8UFU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USM |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF3A6.8UFU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USM |
на замовлення 1492 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF3A6.8UFU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USM |
на замовлення 1492 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF3S6.8ECT(TPL3) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM CST3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF3S6.8ECT(TPL3) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM CST3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF3S6.8ECT(TPL3) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM CST3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A3.3F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM SMV |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF5A3.3F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A3.3F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A3.3FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF5A3.3FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A3.3FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM USV |
на замовлення 2955 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6CFU(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.8VWM USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6CFU(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.8VWM USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6CFU(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.8VWM USV |
на замовлення 1907 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6CJE(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.8VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6CJE(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.8VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6CJE(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.8VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM SMV |
на замовлення 5878 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM SMV |
на замовлення 5878 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A3.6FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM USV |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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DF5A3.6JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DF5A3.6JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DF5A3.6JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DF5A5.6LFU(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 8pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: USV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.3V Power Line Protection: No Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DF5A5.6LFU(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 8pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: USV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.3V Power Line Protection: No Part Status: Active |
на замовлення 8766 шт: термін постачання 21-31 дні (днів) |
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DF5A6.2CFU(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: USV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.2CFU(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: USV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
на замовлення 14042 шт: термін постачання 21-31 дні (днів) |
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DF5A6.2CJE(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A6.2CJE(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DF5A6.2CJE(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DF5A6.2F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3VWM SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SMV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.8V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A6.2F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3VWM SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SMV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.8V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A6.2FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3VWM USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: USV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.8V Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.2FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3VWM USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: USV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.8V Power Line Protection: No |
на замовлення 7835 шт: термін постачання 21-31 дні (днів) |
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DF5A6.2JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A6.2JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A6.2JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3VWM ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DF5A6.2LJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESVPackaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.9V Power Line Protection: No |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.2LJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESVPackaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.9V Power Line Protection: No |
на замовлення 17243 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8CFU(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 23pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: USV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8CFU(TE85L,F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 23pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: USV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8F,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8F,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 5493 шт: термін постачання 21-31 дні (днів) |
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SSM3K339R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 2A SOT-23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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SSM3K339R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 2A SOT-23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
на замовлення 28726 шт: термін постачання 21-31 дні (днів) |
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SSM6K217FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 1.8A ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SSM6K217FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 1.8A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
на замовлення 21923 шт: термін постачання 21-31 дні (днів) |
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TRS12N65D,S1F | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOT 650V 6A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6 Voltage Coupled to Current - Reverse Leakage @ Vr: 650 Current - Reverse Leakage @ Vr: 90 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TRS16N65D,S1F | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOT 650V 8A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 90 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TRS20N65D,S1F | Toshiba Semiconductor and Storage | Description: DIODE ARRAY SCHOTTKY 650V TO247 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TRS24N65D,S1F | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 650V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 12A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 90 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TK100S04N1L,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 100A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V |
на замовлення 2828 шт: термін постачання 21-31 дні (днів) |
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TK100S04N1L,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 100A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
TK10A60E,S5X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 10A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
TK10A80E,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 800V 10A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
TK10J80E,S1E | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 800V 10A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
|
| DF3A6.8LFU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
Description: TVS DIODE 5VWM USM
на замовлення 473 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.85 грн |
| 14+ | 22.88 грн |
| 100+ | 12.99 грн |
| DF3A6.8UFU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
Description: TVS DIODE 5VWM USM
на замовлення 12 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF3A6.8UFU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
Description: TVS DIODE 5VWM USM
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF3A6.8UFU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
Description: TVS DIODE 5VWM USM
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF3S6.8ECT(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST3
Description: TVS DIODE 5VWM CST3
товару немає в наявності
В кошику
од. на суму грн.
| DF3S6.8ECT(TPL3) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST3
Description: TVS DIODE 5VWM CST3
товару немає в наявності
В кошику
од. на суму грн.
| DF3S6.8ECT(TPL3) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST3
Description: TVS DIODE 5VWM CST3
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.3F(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
Description: TVS DIODE 1VWM SMV
на замовлення 12 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF5A3.3F(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
Description: TVS DIODE 1VWM SMV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.3F(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
Description: TVS DIODE 1VWM SMV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.3FU(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
Description: TVS DIODE 1VWM USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF5A3.3FU(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
Description: TVS DIODE 1VWM USV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.3FU(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
Description: TVS DIODE 1VWM USV
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF5A3.6CFU(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM USV
Description: TVS DIODE 1.8VWM USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF5A3.6CFU(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM USV
Description: TVS DIODE 1.8VWM USV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.6CFU(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM USV
Description: TVS DIODE 1.8VWM USV
на замовлення 1907 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF5A3.6CJE(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM ESV
Description: TVS DIODE 1.8VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.6CJE(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM ESV
Description: TVS DIODE 1.8VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.6CJE(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM ESV
Description: TVS DIODE 1.8VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.6F(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
Description: TVS DIODE 1VWM SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF5A3.6F(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
Description: TVS DIODE 1VWM SMV
на замовлення 5878 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF5A3.6F(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
Description: TVS DIODE 1VWM SMV
на замовлення 5878 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF5A3.6FU(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
Description: TVS DIODE 1VWM USV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.6FU(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
Description: TVS DIODE 1VWM USV
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.11 грн |
| DF5A3.6JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Description: TVS DIODE 1VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.6JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Description: TVS DIODE 1VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A3.6JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Description: TVS DIODE 1VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A5.6LFU(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.77 грн |
| 6000+ | 4.33 грн |
| DF5A5.6LFU(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
на замовлення 8766 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.23 грн |
| 23+ | 13.76 грн |
| 100+ | 6.55 грн |
| 500+ | 6.11 грн |
| 1000+ | 6.08 грн |
| DF5A6.2CFU(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.83 грн |
| 6000+ | 5.07 грн |
| 9000+ | 4.79 грн |
| DF5A6.2CFU(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
на замовлення 14042 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.23 грн |
| 24+ | 13.60 грн |
| 100+ | 7.09 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.97 грн |
| DF5A6.2CJE(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Description: TVS DIODE 5VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A6.2CJE(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Description: TVS DIODE 5VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A6.2CJE(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Description: TVS DIODE 5VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A6.2F(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Description: TVS DIODE 3VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF5A6.2F(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Description: TVS DIODE 3VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF5A6.2FU(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Description: TVS DIODE 3VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.63 грн |
| 6000+ | 4.20 грн |
| DF5A6.2FU(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Description: TVS DIODE 3VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
на замовлення 7835 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 19.60 грн |
| 25+ | 12.66 грн |
| 100+ | 6.58 грн |
| 500+ | 5.87 грн |
| 1000+ | 5.56 грн |
| DF5A6.2JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Description: TVS DIODE 3VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A6.2JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Description: TVS DIODE 3VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A6.2JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Description: TVS DIODE 3VWM ESV
товару немає в наявності
В кошику
од. на суму грн.
| DF5A6.2LJE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 3.42 грн |
| 8000+ | 2.63 грн |
| DF5A6.2LJE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
на замовлення 17243 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.88 грн |
| 36+ | 8.81 грн |
| 100+ | 4.46 грн |
| 500+ | 3.81 грн |
| 1000+ | 3.43 грн |
| DF5A6.8CFU(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.29 грн |
| 6000+ | 5.48 грн |
| 9000+ | 5.18 грн |
| DF5A6.8CFU(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.23 грн |
| 25+ | 12.97 грн |
| 100+ | 7.09 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.97 грн |
| DF5A6.8F,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE 5VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.19 грн |
| DF5A6.8F,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE 5VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 5493 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.88 грн |
| 36+ | 8.81 грн |
| 100+ | 4.53 грн |
| 500+ | 4.05 грн |
| 1000+ | 3.84 грн |
| SSM3K339R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.38 грн |
| 6000+ | 4.68 грн |
| 9000+ | 3.92 грн |
| 15000+ | 3.57 грн |
| 21000+ | 3.42 грн |
| SSM3K339R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
на замовлення 28726 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.13 грн |
| 21+ | 15.33 грн |
| 100+ | 7.49 грн |
| 500+ | 6.50 грн |
| 1000+ | 5.97 грн |
| SSM6K217FE,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 5.93 грн |
| 8000+ | 5.37 грн |
| 12000+ | 5.33 грн |
| 20000+ | 4.88 грн |
| SSM6K217FE,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
на замовлення 21923 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.43 грн |
| 38+ | 8.34 грн |
| 100+ | 7.64 грн |
| 500+ | 6.96 грн |
| 1000+ | 6.76 грн |
| TRS12N65D,S1F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOT 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Description: DIODE ARRAY SCHOT 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| TRS16N65D,S1F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOT 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Description: DIODE ARRAY SCHOT 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| TRS20N65D,S1F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 650V TO247
Description: DIODE ARRAY SCHOTTKY 650V TO247
товару немає в наявності
В кошику
од. на суму грн.
| TRS24N65D,S1F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 650V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Description: DIODE ARR SCHOTT 650V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
товару немає в наявності
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од. на суму грн.
| TK100S04N1L,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
на замовлення 2828 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 256.41 грн |
| 10+ | 161.04 грн |
| 100+ | 112.30 грн |
| 500+ | 85.85 грн |
| 1000+ | 79.58 грн |
| TK100S04N1L,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
товару немає в наявності
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од. на суму грн.
| TK10A60E,S5X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| TK10A80E,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 800V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| TK10J80E,S1E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 221.30 грн |




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