Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119458) > Сторінка 1964 з 1991

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BSC014N04LSIATMA1 BSC014N04LSIATMA1 INFINEON TECHNOLOGIES BSC014N04LSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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CY8C6144LQI-S4F82 INFINEON TECHNOLOGIES Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906 Category: ST microcontrollers
Description: CY8C6144LQI-S4F82
на замовлення 1300 шт:
термін постачання 14-30 дні (днів)
260+465.15 грн
Мінімальне замовлення: 260
В кошику  од. на суму  грн.
BFP183E7764HTSA1 INFINEON TECHNOLOGIES Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.25W
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
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IRFP7430PBF IRFP7430PBF INFINEON TECHNOLOGIES IRFP7430PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
на замовлення 443 шт:
термін постачання 14-30 дні (днів)
3+168.57 грн
10+147.32 грн
25+136.44 грн
50+126.40 грн
100+118.86 грн
250+109.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFS7434TRL7PP INFINEON TECHNOLOGIES irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Power dissipation: 245W
Case: D2PAK-7
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.3kA
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IRFS7434TRLPBF INFINEON TECHNOLOGIES irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 294W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 294W
Case: D2PAK; TO263AB
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 216nC
Kind of channel: enhancement
Technology: HEXFET®
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IRFS7530TRL7PP IRFS7530TRL7PP INFINEON TECHNOLOGIES irfs7530-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 365 шт:
термін постачання 14-30 дні (днів)
2+287.56 грн
10+179.97 грн
25+158.21 грн
100+131.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS7530TRLPBF IRFS7530TRLPBF INFINEON TECHNOLOGIES irfs7530pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhancement
Trade name: StrongIRFET
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BSS139H6327XTSA1 BSS139H6327XTSA1 INFINEON TECHNOLOGIES BSS139H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.1A
Power dissipation: 0.36W
On-state resistance: 30Ω
Gate-source voltage: ±20V
Drain-source voltage: 250V
Kind of channel: depletion
на замовлення 5212 шт:
термін постачання 14-30 дні (днів)
13+35.16 грн
18+23.35 грн
100+15.07 грн
250+12.97 грн
500+11.47 грн
1000+10.13 грн
3000+9.96 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BSZ520N15NS3GATMA1 BSZ520N15NS3GATMA1 INFINEON TECHNOLOGIES BSZ520N15NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD30N06S4L23ATMA2 INFINEON TECHNOLOGIES Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK; TO252
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Application: automotive industry
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BSC059N04LSGATMA1 BSC059N04LSGATMA1 INFINEON TECHNOLOGIES BSC059N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
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AUIRF1324STRL AUIRF1324STRL INFINEON TECHNOLOGIES AUIRF1324STRL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSZ240N12NS3GATMA1 BSZ240N12NS3GATMA1 INFINEON TECHNOLOGIES BSZ240N12NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 37A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
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IPA60R190C6XKSA1 IPA60R190C6XKSA1 INFINEON TECHNOLOGIES IPA60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
4+144.23 грн
10+120.54 грн
50+113.84 грн
Мінімальне замовлення: 4
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IRF7313TRPBF IRF7313TRPBF INFINEON TECHNOLOGIES irf7313pbf.pdf description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Case: SO8
Polarisation: unipolar
Power dissipation: 2W
Drain current: 6.5A
Drain-source voltage: 30V
Kind of package: reel
на замовлення 3376 шт:
термін постачання 14-30 дні (днів)
7+69.41 грн
10+43.69 грн
100+30.13 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF7313TRPBFXTMA1 INFINEON TECHNOLOGIES irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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XMC4502F100F768ACXQMA1 XMC4502F100F768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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XMC4502F100K768ACXQMA1 XMC4502F100K768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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BSC010NE2LSATMA1 BSC010NE2LSATMA1 INFINEON TECHNOLOGIES BSC010NE2LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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CY7C65213A-28PVXIT INFINEON TECHNOLOGIES Infineon-CY7C65213.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; SSOP28
Type of integrated circuit: interface
Kind of integrated circuit: USB controller
Mounting: SMD
Case: SSOP28
Kind of package: reel; tape
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Interface: GPIO x8; UART
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CY7C65213A-32LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65213.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; QFN32
Type of integrated circuit: interface
Kind of integrated circuit: USB controller
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Interface: GPIO x8; UART
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S25FL064LABMFA010 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL064LABMFA011 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
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S25FL064LABMFA013 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGMFA010 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S70FL01GSAGMFA010 INFINEON TECHNOLOGIES 002-00466%20Rev%20J.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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IPP220N25NFDAKSA1 IPP220N25NFDAKSA1 INFINEON TECHNOLOGIES IPP220N25NFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
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IKD10N60RC2ATMA1 INFINEON TECHNOLOGIES Infineon-IKD10N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652235f064d23 Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 18.8A; 79W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Gate charge: 48nC
Turn-off time: 250ns
Collector current: 18.8A
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IRF8736TRPBF IRF8736TRPBF INFINEON TECHNOLOGIES irf8736pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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ICE2QR2280ZXKLA1
+1
 		ICE2QR2280ZXKLA1 INFINEON TECHNOLOGIES ICE2QR2280Z.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 800V
Application: SMPS
Operating voltage: 10.5...25V DC
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BSD840NH6327XTSA1 BSD840NH6327XTSA1 INFINEON TECHNOLOGIES BSD840NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 0.88A
Gate-source voltage: ±8V
Technology: OptiMOS™ 2
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 1576 шт:
термін постачання 14-30 дні (днів)
18+26.14 грн
26+16.24 грн
50+10.97 грн
100+9.29 грн
250+7.62 грн
500+6.53 грн
1000+5.78 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BTS716GBXUMA1 BTS716GBXUMA1 INFINEON TECHNOLOGIES BTS716GB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Power dissipation: 3.6W
Turn-on time: 270µs
Turn-off time: 0.25ms
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
2+308.30 грн
10+226.01 грн
25+215.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB330P10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
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IPB19DP10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Case: D2PAK; TO263
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
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IPD11DP10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD11DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddc895e91a40 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 100V; -22A; 125W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: -22A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 111mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 59nC
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S25FL064LABBHV020 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
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S25FL128LAGBHV020 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL128LAGBHV023 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL256LAGBHV020 INFINEON TECHNOLOGIES S25FL.pdf Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
товару немає в наявності
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S25FL256LAGBHV023 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S26KS128SDPBHV020 INFINEON TECHNOLOGIES infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
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S26KS256SDPBHV020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
В кошику  од. на суму  грн.
S26KS512SDPBHV020 INFINEON TECHNOLOGIES infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
В кошику  од. на суму  грн.
S27KL0642GABHV020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S27KL0643DPBHV023 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S27KS0642GABHV020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0642GABHV023 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0643GABHV020 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrat Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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S29GL01GS11DHV020 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
товару немає в наявності
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S29GL01GS11DHV023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL01GT11DHV023 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
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S29GL064S80DHV020 INFINEON TECHNOLOGIES CYPR-S-A0005170109-1.pdf?t.download=true&u=5oefqw Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
товару немає в наявності
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S29GL064S80DHV023 INFINEON TECHNOLOGIES Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL256S10DHV020 INFINEON TECHNOLOGIES FASLS03740-1.pdf?t.download=true&u=5oefqw Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
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S29GL256S10DHV023 INFINEON TECHNOLOGIES download Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
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S29GL512T11DHV020 INFINEON TECHNOLOGIES S29GL-T.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL512T11DHV023 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S70GL02GS11FHV020 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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BSC014N04LSIATMA1 BSC014N04LSI-DTE.pdf
BSC014N04LSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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CY8C6144LQI-S4F82 Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906
Виробник: INFINEON TECHNOLOGIES
Category: ST microcontrollers
Description: CY8C6144LQI-S4F82
на замовлення 1300 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
260+465.15 грн
Мінімальне замовлення: 260
В кошику  од. на суму  грн.
BFP183E7764HTSA1 Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.25W
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
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IRFP7430PBF IRFP7430PBF.pdf
IRFP7430PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
на замовлення 443 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+168.57 грн
10+147.32 грн
25+136.44 грн
50+126.40 грн
100+118.86 грн
250+109.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFS7434TRL7PP irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Power dissipation: 245W
Case: D2PAK-7
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.3kA
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IRFS7434TRLPBF irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 294W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 294W
Case: D2PAK; TO263AB
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 216nC
Kind of channel: enhancement
Technology: HEXFET®
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IRFS7530TRL7PP irfs7530-7ppbf.pdf
IRFS7530TRL7PP
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 365 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+287.56 грн
10+179.97 грн
25+158.21 грн
100+131.42 грн
Мінімальне замовлення: 2
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IRFS7530TRLPBF irfs7530pbf.pdf
IRFS7530TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhancement
Trade name: StrongIRFET
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BSS139H6327XTSA1 BSS139H6327XTSA1.pdf
BSS139H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.1A
Power dissipation: 0.36W
On-state resistance: 30Ω
Gate-source voltage: ±20V
Drain-source voltage: 250V
Kind of channel: depletion
на замовлення 5212 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+35.16 грн
18+23.35 грн
100+15.07 грн
250+12.97 грн
500+11.47 грн
1000+10.13 грн
3000+9.96 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BSZ520N15NS3GATMA1 BSZ520N15NS3G-DTE.pdf
BSZ520N15NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD30N06S4L23ATMA2 Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK; TO252
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Application: automotive industry
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BSC059N04LSGATMA1 BSC059N04LSG-DTE.pdf
BSC059N04LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
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AUIRF1324STRL AUIRF1324STRL.pdf
AUIRF1324STRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSZ240N12NS3GATMA1 BSZ240N12NS3G-DTE.pdf
BSZ240N12NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 37A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
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IPA60R190C6XKSA1 IPA60R190C6-DTE.pdf
IPA60R190C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+144.23 грн
10+120.54 грн
50+113.84 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7313TRPBF description irf7313pbf.pdf
IRF7313TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Case: SO8
Polarisation: unipolar
Power dissipation: 2W
Drain current: 6.5A
Drain-source voltage: 30V
Kind of package: reel
на замовлення 3376 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+69.41 грн
10+43.69 грн
100+30.13 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF7313TRPBFXTMA1 irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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XMC4502F100F768ACXQMA1 XMC4500-DTE.pdf
XMC4502F100F768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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XMC4502F100K768ACXQMA1 XMC4500-DTE.pdf
XMC4502F100K768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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BSC010NE2LSATMA1 BSC010NE2LS-DTE.pdf
BSC010NE2LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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CY7C65213A-28PVXIT Infineon-CY7C65213.pdf
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; SSOP28
Type of integrated circuit: interface
Kind of integrated circuit: USB controller
Mounting: SMD
Case: SSOP28
Kind of package: reel; tape
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Interface: GPIO x8; UART
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CY7C65213A-32LTXIT Infineon-CY7C65213.pdf
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; QFN32
Type of integrated circuit: interface
Kind of integrated circuit: USB controller
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Interface: GPIO x8; UART
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S25FL064LABMFA010 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL064LABMFA011 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
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S25FL064LABMFA013 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGMFA010 S25FL.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFA010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S70FL01GSAGMFA010 002-00466%20Rev%20J.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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IPP220N25NFDAKSA1 IPP220N25NFD-DTE.pdf
IPP220N25NFDAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
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IKD10N60RC2ATMA1 Infineon-IKD10N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652235f064d23
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 18.8A; 79W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Gate charge: 48nC
Turn-off time: 250ns
Collector current: 18.8A
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IRF8736TRPBF irf8736pbf.pdf
IRF8736TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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ICE2QR2280ZXKLA1 ICE2QR2280Z.pdf
ICE2QR2280ZXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 800V
Application: SMPS
Operating voltage: 10.5...25V DC
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BSD840NH6327XTSA1 BSD840NH6327XTSA1.pdf
BSD840NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 0.88A
Gate-source voltage: ±8V
Technology: OptiMOS™ 2
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 1576 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+26.14 грн
26+16.24 грн
50+10.97 грн
100+9.29 грн
250+7.62 грн
500+6.53 грн
1000+5.78 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BTS716GBXUMA1 BTS716GB.pdf
BTS716GBXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Power dissipation: 3.6W
Turn-on time: 270µs
Turn-off time: 0.25ms
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+308.30 грн
10+226.01 грн
25+215.96 грн
Мінімальне замовлення: 2
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IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
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IPB19DP10NMATMA1 Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Case: D2PAK; TO263
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
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IPD11DP10NMATMA1 Infineon-IPD11DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddc895e91a40
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 100V; -22A; 125W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: -22A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 111mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 59nC
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S25FL064LABBHV020 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
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S25FL128LAGBHV020 S25FL.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL128LAGBHV023 INFN-S-A0017271261-1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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В кошику  од. на суму  грн.
S25FL256LAGBHV020 S25FL.pdf Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL256LAGBHV023 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S26KS128SDPBHV020 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
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S26KS256SDPBHV020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
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S26KS512SDPBHV020 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
В кошику  од. на суму  грн.
S27KL0642GABHV020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S27KL0643DPBHV023 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0642GABHV020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0642GABHV023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0643GABHV020 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrat
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S29GL01GS11DHV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL01GS11DHV023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GT11DHV023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
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В кошику  од. на суму  грн.
S29GL064S80DHV020 CYPR-S-A0005170109-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL064S80DHV023 Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S29GL256S10DHV020 FASLS03740-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
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S29GL256S10DHV023 download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
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S29GL512T11DHV020 S29GL-T.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T11DHV023
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
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S70GL02GS11FHV020 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
товару немає в наявності
В кошику  од. на суму  грн.
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