Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119485) > Сторінка 1962 з 1992

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IFX1050G IFX1050G INFINEON TECHNOLOGIES IFX1050G.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
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IFX1050GVIO IFX1050GVIO INFINEON TECHNOLOGIES IFX1050GVIO.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 3...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
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ITS41K0SMENHUMA1 INFINEON TECHNOLOGIES Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.8Ω
Supply voltage: 4.9...60V DC
Operating temperature: -40...125°C
Power dissipation: 1.7W
Integrated circuit features: thermal protection
Application: automotive industry
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BSP603S2L BSP603S2L INFINEON TECHNOLOGIES BSP603S2L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Mounting: SMD
Technology: OptiMOS™
Case: SOT223
On-state resistance: 33mΩ
Power dissipation: 1.8W
Drain current: 5.2A
Gate-source voltage: ±20V
Drain-source voltage: 55V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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TLF50251EL TLF50251EL INFINEON TECHNOLOGIES TLF50251EL.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
2+225.36 грн
Мінімальне замовлення: 2
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TLF50201EL TLF50201EL INFINEON TECHNOLOGIES TLF50201EL.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
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S25FL128LAGMFI010 S25FL128LAGMFI010 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 1219 шт:
термін постачання 14-30 дні (днів)
2+384.02 грн
Мінімальне замовлення: 2
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S25FL128SAGMFIG01 S25FL128SAGMFIG01 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
2+325.42 грн
Мінімальне замовлення: 2
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S25FL256LAGBHA020 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Application: automotive
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S25FL256LAGBHA023 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Application: automotive
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S26KS256SDPBHA020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
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S26KS256SDPBHA023 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
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S26KS512SDPBHA020 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
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S27KL0643DPBHA020 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S27KL0643DPBHA023 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S27KS0642GABHA020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0642GABHA023 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0643GABHA023 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S29GL256S10DHA020 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Access time: 100ns
Kind of package: in-tray
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S29GL512S10DHA023 INFINEON TECHNOLOGIES CYPR-S-A0006313878-1.pdf?t.download=true&u=5oefqw Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 100ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Output voltage: 2.7...3.6V DC
Application: automotive
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S70KL1282DPBHA020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1282DPBHA023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KS1282GABHA023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S80KS2563GABHA020 INFINEON TECHNOLOGIES Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S80KS5122GABHA020 INFINEON TECHNOLOGIES Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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CY7C65632-48AXCT INFINEON TECHNOLOGIES Infineon-CY7C65632_CY7C65634_HX2VL.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; I2C,SPI; HUB controller; 3.15÷3.6VDC,4.75÷5.25VDC
Type of integrated circuit: interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Case: TQFP48
Kind of core: 8-bit
Kind of package: reel; tape
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ISA170170N04LMDSXTMA1 INFINEON TECHNOLOGIES Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
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ISA170230C04LMDSXTMA1 INFINEON TECHNOLOGIES ISA170230C04LMDSXTMA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
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IRF7389TRPBF IRF7389TRPBF INFINEON TECHNOLOGIES irf7389pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BFR181WH6327XTSA1 BFR181WH6327XTSA1 INFINEON TECHNOLOGIES BFR181WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Kind of package: reel; tape
Mounting: SMD
Collector current: 20mA
Power dissipation: 0.175W
Collector-emitter voltage: 12V
Frequency: 8GHz
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Case: SOT323
на замовлення 8903 шт:
термін постачання 14-30 дні (днів)
22+20.73 грн
26+16.24 грн
29+14.48 грн
35+12.30 грн
50+10.97 грн
100+9.88 грн
250+8.87 грн
500+8.29 грн
1000+7.95 грн
Мінімальне замовлення: 22
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TLV4906KFTSA1 TLV4906KFTSA1 INFINEON TECHNOLOGIES TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
9+50.48 грн
Мінімальне замовлення: 9
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TLE4906KHTSA1 TLE4906KHTSA1 INFINEON TECHNOLOGIES Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
на замовлення 323 шт:
термін постачання 14-30 дні (днів)
12+38.76 грн
14+30.89 грн
25+29.55 грн
50+28.88 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
TLE49462KHTSA1 TLE49462KHTSA1 INFINEON TECHNOLOGIES TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
на замовлення 2399 шт:
термін постачання 14-30 дні (днів)
6+75.72 грн
10+51.48 грн
100+36.50 грн
1000+29.13 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TLE4945L TLE4945L INFINEON TECHNOLOGIES TLE49x5L.PDF Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Mounting: THT
Operating temperature: -40...150°C
на замовлення 408 шт:
термін постачання 14-30 дні (днів)
5+107.27 грн
10+92.08 грн
25+61.11 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TLE4946KHTSA1 INFINEON TECHNOLOGIES TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379 Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
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BAT1503WE6327HTSA1 BAT1503WE6327HTSA1 INFINEON TECHNOLOGIES BAT1503WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Case: SOD323
Power dissipation: 0.1W
Load current: 0.11A
Max. forward voltage: 0.41V
Semiconductor structure: single diode
Max. off-state voltage: 4V
Mounting: SMD
на замовлення 2233 шт:
термін постачання 14-30 дні (днів)
10+48.68 грн
12+35.49 грн
14+30.13 грн
50+20.01 грн
100+16.99 грн
500+13.39 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BAT1502ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
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BAT1504RE6152HTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
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BAT15099E6433HTMA1 INFINEON TECHNOLOGIES INFNS15420-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
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BTH500301LUAAUMA1 INFINEON TECHNOLOGIES BTH500301LUAAUMA1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 22.5A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 22.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-HSOF-8
On-state resistance: 7mΩ
Kind of package: reel; tape
Supply voltage: 12...54V DC
Technology: PROFET™
Operating temperature: -40...150°C
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BTH500301LUAAUMA1 INFINEON TECHNOLOGIES Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324 Category: Power switches - integrated circuits
Description: IC: power switch; 25A; N-Channel; SMD; PG-HSOF-8; -40÷150°C
Type of integrated circuit: power switch
Output current: 25A
Kind of output: N-Channel
Mounting: SMD
Case: PG-HSOF-8
On-state resistance: 3Ω
Operating temperature: -40...150°C
Active logical level: high
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ICE5AR4780BZSXKLA1
+1
 		ICE5AR4780BZSXKLA1 INFINEON TECHNOLOGIES ICE5ARxxxxBZS.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
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IRLR3103TRPBF IRLR3103TRPBF INFINEON TECHNOLOGIES irlr3103pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BTS50452EKAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; -40÷150°C; 2W
Operating temperature: -40...150°C
Kind of output: N-Channel
Case: PG-DSO-14-40 EP
Type of integrated circuit: power switch
Mounting: SMD
Integrated circuit features: thermal protection
On-state resistance: 85mΩ
Number of channels: 2
Power dissipation: 2W
Output current: 4A
Supply voltage: 5...28V DC
Application: automotive industry
Kind of integrated circuit: high-side
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IRFS7430TRL7PP IRFS7430TRL7PP INFINEON TECHNOLOGIES IRFS7430TRL7PP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: HEXFET®
Power dissipation: 375W
Gate charge: 305nC
On-state resistance: 0.55mΩ
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IRFS7430TRLPBF INFINEON TECHNOLOGIES Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 426A
на замовлення 786 шт:
термін постачання 14-30 дні (днів)
3+214.55 грн
10+142.30 грн
25+123.05 грн
100+103.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IKW30N65EL5XKSA1 IKW30N65EL5XKSA1 INFINEON TECHNOLOGIES IKW30N65EL5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 44ns
Gate charge: 168nC
Turn-off time: 359ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 62A
Power dissipation: 114W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
на замовлення 229 шт:
термін постачання 14-30 дні (днів)
2+251.12 грн
10+188.34 грн
20+163.23 грн
30+153.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKW30N65H5XKSA1 IKW30N65H5XKSA1 INFINEON TECHNOLOGIES ikw30n65h5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 31ns
Gate charge: 70nC
Turn-off time: 209ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 35A
Power dissipation: 94W
Pulsed collector current: 90A
Collector-emitter voltage: 650V
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
2+255.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKW30N65ES5XKSA1 IKW30N65ES5XKSA1 INFINEON TECHNOLOGIES IKW30N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 29ns
Gate charge: 70nC
Turn-off time: 154ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
Collector-emitter voltage: 650V
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
2+256.01 грн
10+204.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 INFINEON TECHNOLOGIES IKW30N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 51ns
Gate charge: 155nC
Turn-off time: 376ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 75W
Pulsed collector current: 90A
Collector-emitter voltage: 650V
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
3+219.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IHW30N65R5XKSA1 IHW30N65R5XKSA1 INFINEON TECHNOLOGIES IHW30N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 228ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
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IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 INFINEON TECHNOLOGIES IKB30N65ES5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
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IGP30N65F5XKSA1 IGP30N65F5XKSA1 INFINEON TECHNOLOGIES IGP30N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector current: 55A
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IGW30N65L5XKSA1 IGW30N65L5XKSA1 INFINEON TECHNOLOGIES Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 INFINEON TECHNOLOGIES IKB30N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 52ns
Turn-off time: 184ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 120A
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IRF7413ZTRPBF IRF7413ZTRPBF INFINEON TECHNOLOGIES irf7413zpbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Gate-source voltage: ±20V
Technology: HEXFET®
на замовлення 126 шт:
термін постачання 14-30 дні (днів)
7+67.61 грн
12+35.32 грн
25+31.81 грн
50+29.21 грн
100+26.62 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF7413ZTRPBFXTMA1 INFINEON TECHNOLOGIES irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BFR106E6327 BFR106E6327 INFINEON TECHNOLOGIES BFR106E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Collector current: 0.21A
Power dissipation: 0.7W
Collector-emitter voltage: 16V
Frequency: 5GHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
на замовлення 1047 шт:
термін постачання 14-30 дні (днів)
22+20.73 грн
28+15.40 грн
31+13.56 грн
37+11.55 грн
50+10.38 грн
100+9.54 грн
250+8.71 грн
500+8.62 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
IPB031NE7N3GATMA1 IPB031NE7N3GATMA1 INFINEON TECHNOLOGIES IPB031NE7N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
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BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 INFINEON TECHNOLOGIES BSZ150N10LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
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IFX1050G IFX1050G.pdf
IFX1050G
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
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IFX1050GVIO IFX1050GVIO.pdf
IFX1050GVIO
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 3...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
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ITS41K0SMENHUMA1 Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.8Ω
Supply voltage: 4.9...60V DC
Operating temperature: -40...125°C
Power dissipation: 1.7W
Integrated circuit features: thermal protection
Application: automotive industry
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BSP603S2L BSP603S2L.pdf
BSP603S2L
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Mounting: SMD
Technology: OptiMOS™
Case: SOT223
On-state resistance: 33mΩ
Power dissipation: 1.8W
Drain current: 5.2A
Gate-source voltage: ±20V
Drain-source voltage: 55V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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TLF50251EL TLF50251EL.pdf
TLF50251EL
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+225.36 грн
Мінімальне замовлення: 2
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TLF50201EL TLF50201EL.pdf
TLF50201EL
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
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S25FL128LAGMFI010 S25FL.pdf
S25FL128LAGMFI010
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 1219 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+384.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FL128SAGMFIG01 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFIG01
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+325.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FL256LAGBHA020 Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Application: automotive
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S25FL256LAGBHA023 Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Application: automotive
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S26KS256SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
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В кошику  од. на суму  грн.
S26KS256SDPBHA023 download
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
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В кошику  од. на суму  грн.
S26KS512SDPBHA020
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
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S27KL0643DPBHA020 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S27KL0643DPBHA023 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0642GABHA020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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В кошику  од. на суму  грн.
S27KS0642GABHA023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0643GABHA023 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256S10DHA020
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Access time: 100ns
Kind of package: in-tray
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В кошику  од. на суму  грн.
S29GL512S10DHA023 CYPR-S-A0006313878-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 100ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Output voltage: 2.7...3.6V DC
Application: automotive
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S70KL1282DPBHA020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1282DPBHA023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S70KS1282GABHA023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S80KS2563GABHA020 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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S80KS5122GABHA020 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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CY7C65632-48AXCT Infineon-CY7C65632_CY7C65634_HX2VL.pdf
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C,SPI; HUB controller; 3.15÷3.6VDC,4.75÷5.25VDC
Type of integrated circuit: interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Case: TQFP48
Kind of core: 8-bit
Kind of package: reel; tape
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ISA170170N04LMDSXTMA1 Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IRF7389TRPBF description irf7389pbf.pdf
IRF7389TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BFR181WH6327XTSA1 BFR181WH6327.pdf
BFR181WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Kind of package: reel; tape
Mounting: SMD
Collector current: 20mA
Power dissipation: 0.175W
Collector-emitter voltage: 12V
Frequency: 8GHz
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Case: SOT323
на замовлення 8903 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
22+20.73 грн
26+16.24 грн
29+14.48 грн
35+12.30 грн
50+10.97 грн
100+9.88 грн
250+8.87 грн
500+8.29 грн
1000+7.95 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
TLV4906KFTSA1 TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906KFTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+50.48 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906KHTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
на замовлення 323 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+38.76 грн
14+30.89 грн
25+29.55 грн
50+28.88 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
TLE49462KHTSA1 TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f
TLE49462KHTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
на замовлення 2399 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+75.72 грн
10+51.48 грн
100+36.50 грн
1000+29.13 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TLE4945L TLE49x5L.PDF
TLE4945L
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Mounting: THT
Operating temperature: -40...150°C
на замовлення 408 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+107.27 грн
10+92.08 грн
25+61.11 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TLE4946KHTSA1 TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
товару немає в наявності
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BAT1503WE6327HTSA1 BAT1503WE6327HTSA1.pdf
BAT1503WE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Case: SOD323
Power dissipation: 0.1W
Load current: 0.11A
Max. forward voltage: 0.41V
Semiconductor structure: single diode
Max. off-state voltage: 4V
Mounting: SMD
на замовлення 2233 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+48.68 грн
12+35.49 грн
14+30.13 грн
50+20.01 грн
100+16.99 грн
500+13.39 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BAT1502ELE6327XTMA1 Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
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BAT1504RE6152HTSA1 Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
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BAT15099E6433HTMA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
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BTH500301LUAAUMA1 BTH500301LUAAUMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 22.5A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 22.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-HSOF-8
On-state resistance: 7mΩ
Kind of package: reel; tape
Supply voltage: 12...54V DC
Technology: PROFET™
Operating temperature: -40...150°C
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BTH500301LUAAUMA1 Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 25A; N-Channel; SMD; PG-HSOF-8; -40÷150°C
Type of integrated circuit: power switch
Output current: 25A
Kind of output: N-Channel
Mounting: SMD
Case: PG-HSOF-8
On-state resistance: 3Ω
Operating temperature: -40...150°C
Active logical level: high
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ICE5AR4780BZSXKLA1 ICE5ARxxxxBZS.pdf
ICE5AR4780BZSXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
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IRLR3103TRPBF irlr3103pbf.pdf
IRLR3103TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BTS50452EKAXUMA1 Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; -40÷150°C; 2W
Operating temperature: -40...150°C
Kind of output: N-Channel
Case: PG-DSO-14-40 EP
Type of integrated circuit: power switch
Mounting: SMD
Integrated circuit features: thermal protection
On-state resistance: 85mΩ
Number of channels: 2
Power dissipation: 2W
Output current: 4A
Supply voltage: 5...28V DC
Application: automotive industry
Kind of integrated circuit: high-side
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IRFS7430TRL7PP IRFS7430TRL7PP.pdf
IRFS7430TRL7PP
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: HEXFET®
Power dissipation: 375W
Gate charge: 305nC
On-state resistance: 0.55mΩ
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 426A
на замовлення 786 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+214.55 грн
10+142.30 грн
25+123.05 грн
100+103.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IKW30N65EL5XKSA1 IKW30N65EL5.pdf
IKW30N65EL5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 44ns
Gate charge: 168nC
Turn-off time: 359ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 62A
Power dissipation: 114W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
на замовлення 229 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+251.12 грн
10+188.34 грн
20+163.23 грн
30+153.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKW30N65H5XKSA1 ikw30n65h5.pdf
IKW30N65H5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 31ns
Gate charge: 70nC
Turn-off time: 209ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 35A
Power dissipation: 94W
Pulsed collector current: 90A
Collector-emitter voltage: 650V
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+255.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKW30N65ES5XKSA1 IKW30N65ES5.pdf
IKW30N65ES5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 29ns
Gate charge: 70nC
Turn-off time: 154ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
Collector-emitter voltage: 650V
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+256.01 грн
10+204.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKW30N65WR5XKSA1 IKW30N65WR5.pdf
IKW30N65WR5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 51ns
Gate charge: 155nC
Turn-off time: 376ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 75W
Pulsed collector current: 90A
Collector-emitter voltage: 650V
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+219.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IHW30N65R5XKSA1 IHW30N65R5.pdf
IHW30N65R5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 228ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
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IKB30N65ES5ATMA1 IKB30N65ES5.pdf
IKB30N65ES5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
товару немає в наявності
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IGP30N65F5XKSA1 IGP30N65F5-DTE.pdf
IGP30N65F5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector current: 55A
товару немає в наявності
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IGW30N65L5XKSA1 Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9
IGW30N65L5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
товару немає в наявності
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IKB30N65EH5ATMA1 IKB30N65EH5.pdf
IKB30N65EH5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 52ns
Turn-off time: 184ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 120A
товару немає в наявності
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IRF7413ZTRPBF description irf7413zpbf.pdf
IRF7413ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Gate-source voltage: ±20V
Technology: HEXFET®
на замовлення 126 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+67.61 грн
12+35.32 грн
25+31.81 грн
50+29.21 грн
100+26.62 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF7413ZTRPBFXTMA1 irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BFR106E6327 BFR106E6327-dte.pdf
BFR106E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Collector current: 0.21A
Power dissipation: 0.7W
Collector-emitter voltage: 16V
Frequency: 5GHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
на замовлення 1047 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
22+20.73 грн
28+15.40 грн
31+13.56 грн
37+11.55 грн
50+10.38 грн
100+9.54 грн
250+8.71 грн
500+8.62 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
IPB031NE7N3GATMA1 IPB031NE7N3G-DTE.pdf
IPB031NE7N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
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BSZ150N10LS3GATMA1 BSZ150N10LS3G-DTE.pdf
BSZ150N10LS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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