Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119485) > Сторінка 1959 з 1992
| Фото | Назва | Виробник | Інформація |
Доступність |
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IRFR3410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IRFR3410TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ICE2QS02GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 20...150kHz Number of channels: 1 Case: PG-DSO-8 Mounting: SMD Operating temperature: -25...125°C Topology: flyback Input voltage: 80...265V Application: SMPS Operating voltage: 11...25V DC |
на замовлення 2121 шт: термін постачання 14-30 дні (днів) |
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IRLMS5703TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.3A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLMS1503TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.2A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLMS1902TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLMS2002TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC850BE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 7532 шт: термін постачання 14-30 дні (днів) |
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BC850CE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 248 шт: термін постачання 14-30 дні (днів) |
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| BC850BWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar Type of transistor: NPN Polarisation: bipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BC850CWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 420 Mounting: SMD Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRGP4062DPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 48A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 250W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PVT412LSPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 200mA On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Release time: 0.5ms Switched voltage: 0...400V AC; 0...400V DC Control current: 3...25mA Manufacturer series: PVT412PbF Relay variant: MOSFET Operate time: 2ms |
на замовлення 175 шт: термін постачання 14-30 дні (днів) |
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| PVT412APBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6 Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA On-state resistance: 6Ω Mounting: THT Case: DIP6 Body dimensions: 8.63x6.47x3.42mm Leads: for PCB Insulation voltage: 4kV Kind of output: MOSFET Operating temperature: -40...85°C Manufacturer series: PV |
на замовлення 3859 шт: термін постачання 14-30 дні (днів) |
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PVT322PBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA Type of relay: solid state Contacts configuration: DPST-NO Control voltage: 1.2V DC Control current: 2...25mA Max. operating current: 0.5A Switched voltage: 0...250V AC; 0...250V DC Manufacturer series: PVT322PbF Relay variant: MOSFET On-state resistance: 10Ω Mounting: THT Case: DIP8 Operate time: 3ms Release time: 0.5ms Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFI540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: THT Gate charge: 62.7nC Kind of package: tube Kind of channel: enhancement |
на замовлення 75 шт: термін постачання 14-30 дні (днів) |
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S29AL008J70TFI020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: CFI; parallel Kind of interface: parallel Mounting: SMD Case: TSSOP48 Operating temperature: -40...85°C Operating voltage: 2.7...3.6V |
на замовлення 514 шт: термін постачання 14-30 дні (днів) |
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| XMC DIGITAL POWER EXPLORER KIT | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1 Type of development kit: ARM Infineon Family: XMC1300; XMC4200 Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller Components: BSC0924ND; IRS2011S; XMC1300; XMC4200 Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2 Connection: pin strips; USB B micro Number of add-on connectors: 1 Kind of architecture: Cortex M4; Cortex M0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY3210-MINIPROG1 | INFINEON TECHNOLOGIES |
Category: Development kits - othersDescription: Dev.kit: Cypress; Software: included Associated circuits: PSoC Programmers and development kits features: ISP programmer Interface: USB Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer Software: included Type of development kit: Cypress |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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XC822MT1FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: I2C; SPI; UART Communictions protocol: DALI Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-16 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 1 Memory: 500B SRAM; 4kB FLASH Operating temperature: -40...85°C Integrated circuit features: LEDTSCU; MDU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 Kind of core: 8-bit |
на замовлення 167 шт: термін постачання 14-30 дні (днів) |
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CY8C5267AXI-LP051 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP100 Number of inputs/outputs: 72 Supply voltage: 1.71...5.5V DC Operating temperature: -40...85°C Kind of core: 32-bit Interface: GPIO; I2C; SPI; UART; USB Integrated circuit features: watchdog Memory: 32kB SRAM; 128kB FLASH Clock frequency: 67MHz |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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IRF7343TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 55/-55V Drain current: 4.7/-3.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/105mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
на замовлення 7880 шт: термін постачання 14-30 дні (днів) |
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IRS20957STRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 10...15V DC Number of channels: 1 Amplifier class: D Case: SO16 Kind of package: reel; tape |
на замовлення 700 шт: термін постачання 14-30 дні (днів) |
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IRF7316TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 1615 шт: термін постачання 14-30 дні (днів) |
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BSS83PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23 Case: PG-SOT23 Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.33A On-state resistance: 2Ω Power dissipation: 0.36W Gate-source voltage: ±20V Technology: SIPMOS™ Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel |
на замовлення 213 шт: термін постачання 14-30 дні (днів) |
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IRL6372TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET x2 Drain-source voltage: 30V Drain current: 8.1A On-state resistance: 17.9mΩ Power dissipation: 2.5W Gate-source voltage: ±12V Polarisation: unipolar |
на замовлення 828 шт: термін постачання 14-30 дні (днів) |
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CY7C1021DV33-10ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating voltage: 3...3.6V |
на замовлення 1056 шт: термін постачання 14-30 дні (днів) |
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IR2127SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 0.2µs Power: 625mW Turn-off time: 150ns Supply voltage: 10...20V DC Output current: -420...200mA Kind of package: tube |
на замовлення 173 шт: термін постачання 14-30 дні (днів) |
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IR2127PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 0.2µs Power: 1W Turn-off time: 150ns Supply voltage: 12...20V DC Output current: -420...200mA Kind of package: tube |
на замовлення 71 шт: термін постачання 14-30 дні (днів) |
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IR21271SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 150ns Power: 625mW Turn-off time: 150ns Supply voltage: 9...20V DC Output current: -420...200mA Kind of package: tube |
на замовлення 64 шт: термін постачання 14-30 дні (днів) |
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IR21271PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 150ns Power: 1W Turn-off time: 150ns Supply voltage: 9...20V DC Output current: -420...200mA Kind of package: tube |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
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IRLR8726TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 340A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 2127 шт: термін постачання 14-30 дні (днів) |
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IPD65R600C6BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Mounting: SMD Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A On-state resistance: 0.6Ω Gate-source voltage: ±20V Power dissipation: 63W Technology: CoolMOS™ Case: PG-TO252-3 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR2128SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 12...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 150ns |
на замовлення 81 шт: термін постачання 14-30 дні (днів) |
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IRFR2905ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 42A Pulsed drain current: 240A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 42A Power dissipation: 110W Case: DPAK; TO252 On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRFB4127PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 76A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
на замовлення 1096 шт: термін постачання 14-30 дні (днів) |
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IRF7324TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV199E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 1.5µs Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Power dissipation: 0.33W Kind of package: reel; tape Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BAV199E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 1.5µs Semiconductor structure: double Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 5nA Power dissipation: 0.33W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FM24CL04B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 4b FRAM Interface: I2C Memory organisation: 512x8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BFP760H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343 Mounting: SMD Case: SOT343 Kind of package: reel; tape Frequency: 45GHz Kind of transistor: HBT; RF Type of transistor: NPN Technology: SiGe:C Collector current: 70mA Power dissipation: 0.24W Collector-emitter voltage: 13V Current gain: 160...400 Polarisation: bipolar |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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IRFB4227PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 26mΩ Gate-source voltage: ±30V Gate charge: 70nC Power dissipation: 190W Technology: HEXFET® |
на замовлення 714 шт: термін постачання 14-30 дні (днів) |
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IRFB4227PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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| SPP15N60CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; 600V; 13.4A; 156W; PG-TO220-3 Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 13.4A Power dissipation: 156W Case: PG-TO220-3 Gate-source voltage: 20V On-state resistance: 0.33Ω Mounting: THT Gate charge: 84nC Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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IRF7424TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICE2HS01GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20 Mounting: SMD Case: PG-DSO-20 Type of integrated circuit: PMIC Topology: push-pull Kind of integrated circuit: resonant mode controller Application: SMPS Operating temperature: -25...125°C Output current: 6mA Operating voltage: 11...18V DC Frequency: 30kHz...1MHz |
на замовлення 999 шт: термін постачання 14-30 дні (днів) |
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| ITS6035SEPKXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; 13A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C Type of integrated circuit: power switch Mounting: SMD Operating temperature: -40...150°C On-state resistance: 35mΩ Output current: 13A Active logical level: high Kind of output: N-Channel Case: PG-TSDSO-14 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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SPP11N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 156W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 66 шт: термін постачання 14-30 дні (днів) |
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IRFP3006PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 375W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
на замовлення 109 шт: термін постачання 14-30 дні (днів) |
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BTS50085-1TMA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD Mounting: SMD Kind of output: N-Channel Type of integrated circuit: power switch On-state resistance: 7.2mΩ Number of channels: 1 Output current: 38A Supply voltage: 5...58V DC Technology: High Current PROFET Case: PG-TO220-7-4 Kind of integrated circuit: high-side |
на замовлення 501 шт: термін постачання 14-30 дні (днів) |
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BTS441RG | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO263-5 On-state resistance: 15mΩ Technology: Classic PROFET Output voltage: 4.75...43V |
на замовлення 270 шт: термін постачання 14-30 дні (днів) |
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BTS6133D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Mounting: SMD Technology: High Current PROFET Kind of integrated circuit: high-side Kind of output: N-Channel Case: TO252-5 On-state resistance: 8mΩ Number of channels: 1 Supply voltage: 5.5...38V DC Output current: 33A |
на замовлення 1294 шт: термін постачання 14-30 дні (днів) |
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BSP752R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Technology: Classic PROFET Output voltage: 52V |
на замовлення 1798 шт: термін постачання 14-30 дні (днів) |
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BTS4300SGA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.3Ω Supply voltage: 5...34V DC Technology: Classic PROFET |
на замовлення 2457 шт: термін постачання 14-30 дні (днів) |
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IPA70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Version: ESD Kind of package: tube Pulsed drain current: 34A |
на замовлення 106 шт: термін постачання 14-30 дні (днів) |
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IPAN70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of channel: enhancement Version: ESD Kind of package: tube |
на замовлення 326 шт: термін постачання 14-30 дні (днів) |
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IPN70R360P7SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 7.2W Case: PG-SOT223 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 16.4nC Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPS70R360P7SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: IPAK SL Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Case: SOT223 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: 240V Drain current: 50mA On-state resistance: 6.5Ω Power dissipation: 1.8W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: depletion Type of transistor: N-MOSFET |
на замовлення 1263 шт: термін постачання 14-30 дні (днів) |
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| IRFR3410TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRFR3410TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| ICE2QS02GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
на замовлення 2121 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 88.34 грн |
| 7+ | 68.64 грн |
| 10+ | 62.78 грн |
| 25+ | 55.25 грн |
| IRLMS5703TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
| IRLMS1503TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
| IRLMS1902TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
| IRLMS2002TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
| BC850BE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 7532 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.62 грн |
| 51+ | 8.29 грн |
| 100+ | 5.46 грн |
| 250+ | 4.64 грн |
| 1000+ | 3.68 грн |
| 3000+ | 3.14 грн |
| BC850CE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 248 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.72 грн |
| 47+ | 8.96 грн |
| 59+ | 7.20 грн |
| 100+ | 6.29 грн |
| BC850BWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| BC850CWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| IRGP4062DPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| PVT412LSPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Release time: 0.5ms
Switched voltage: 0...400V AC; 0...400V DC
Control current: 3...25mA
Manufacturer series: PVT412PbF
Relay variant: MOSFET
Operate time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Release time: 0.5ms
Switched voltage: 0...400V AC; 0...400V DC
Control current: 3...25mA
Manufacturer series: PVT412PbF
Relay variant: MOSFET
Operate time: 2ms
на замовлення 175 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 408.36 грн |
| 5+ | 297.16 грн |
| 10+ | 292.97 грн |
| PVT412APBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Manufacturer series: PV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Manufacturer series: PV
на замовлення 3859 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 402.05 грн |
| 100+ | 335.66 грн |
| PVT322PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IRFI540NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 75 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 133.42 грн |
| 10+ | 54.41 грн |
| 50+ | 50.22 грн |
| S29AL008J70TFI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Kind of interface: parallel
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Kind of interface: parallel
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
на замовлення 514 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 219.95 грн |
| XMC DIGITAL POWER EXPLORER KIT |
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Connection: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Connection: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
товару немає в наявності
В кошику
од. на суму грн.
| CY3210-MINIPROG1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Associated circuits: PSoC
Programmers and development kits features: ISP programmer
Interface: USB
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Software: included
Type of development kit: Cypress
Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Associated circuits: PSoC
Programmers and development kits features: ISP programmer
Interface: USB
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Software: included
Type of development kit: Cypress
товару немає в наявності
В кошику
од. на суму грн.
| XC822MT1FRIAAFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: I2C; SPI; UART
Communictions protocol: DALI
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: I2C; SPI; UART
Communictions protocol: DALI
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
на замовлення 167 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.85 грн |
| 6+ | 82.03 грн |
| 25+ | 77.01 грн |
| 100+ | 69.48 грн |
| CY8C5267AXI-LP051 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 32kB SRAM; 128kB FLASH
Clock frequency: 67MHz
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 32kB SRAM; 128kB FLASH
Clock frequency: 67MHz
на замовлення 90 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 899.65 грн |
| 10+ | 832.88 грн |
| IRF7343TRPBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 7880 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 100.96 грн |
| 10+ | 59.68 грн |
| 100+ | 39.93 грн |
| 250+ | 34.65 грн |
| 500+ | 31.47 грн |
| 1000+ | 28.71 грн |
| 2000+ | 26.45 грн |
| 4000+ | 24.44 грн |
| IRS20957STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
на замовлення 700 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 178.49 грн |
| 10+ | 154.86 грн |
| IRF7316TRPBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 1615 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 99.16 грн |
| 10+ | 63.37 грн |
| 50+ | 45.70 грн |
| 100+ | 40.18 грн |
| 200+ | 35.74 грн |
| 250+ | 34.57 грн |
| 500+ | 31.31 грн |
| 1000+ | 28.71 грн |
| BSS83PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Case: PG-SOT23
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
On-state resistance: 2Ω
Power dissipation: 0.36W
Gate-source voltage: ±20V
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Case: PG-SOT23
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
On-state resistance: 2Ω
Power dissipation: 0.36W
Gate-source voltage: ±20V
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel
на замовлення 213 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.85 грн |
| 24+ | 18.08 грн |
| 50+ | 12.30 грн |
| 100+ | 10.42 грн |
| IRL6372TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
на замовлення 828 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.07 грн |
| 12+ | 37.50 грн |
| 13+ | 33.65 грн |
| 25+ | 27.20 грн |
| 50+ | 24.11 грн |
| CY7C1021DV33-10ZSXI | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
на замовлення 1056 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 134.32 грн |
| 10+ | 123.05 грн |
| IR2127SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 625mW
Turn-off time: 150ns
Supply voltage: 10...20V DC
Output current: -420...200mA
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 625mW
Turn-off time: 150ns
Supply voltage: 10...20V DC
Output current: -420...200mA
Kind of package: tube
на замовлення 173 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 136.12 грн |
| 5+ | 110.49 грн |
| 10+ | 102.96 грн |
| 25+ | 97.94 грн |
| 50+ | 94.59 грн |
| IR2127PBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 1W
Turn-off time: 150ns
Supply voltage: 12...20V DC
Output current: -420...200mA
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 1W
Turn-off time: 150ns
Supply voltage: 12...20V DC
Output current: -420...200mA
Kind of package: tube
на замовлення 71 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 169.92 грн |
| 10+ | 147.32 грн |
| 25+ | 138.12 грн |
| IR21271SPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 625mW
Turn-off time: 150ns
Supply voltage: 9...20V DC
Output current: -420...200mA
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 625mW
Turn-off time: 150ns
Supply voltage: 9...20V DC
Output current: -420...200mA
Kind of package: tube
на замовлення 64 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 130.71 грн |
| 10+ | 113.84 грн |
| IR21271PBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 1W
Turn-off time: 150ns
Supply voltage: 9...20V DC
Output current: -420...200mA
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 1W
Turn-off time: 150ns
Supply voltage: 9...20V DC
Output current: -420...200mA
Kind of package: tube
на замовлення 42 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 224.46 грн |
| 5+ | 184.15 грн |
| 10+ | 168.25 грн |
| 25+ | 147.32 грн |
| IRLR8726TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 2127 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.27 грн |
| 14+ | 30.97 грн |
| 100+ | 21.18 грн |
| 250+ | 18.67 грн |
| 500+ | 16.66 грн |
| 1000+ | 15.74 грн |
| IPD65R600C6BTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| IR2128SPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
на замовлення 81 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 121.37 грн |
| IRFR2905ZTRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel
Kind of channel: enhancement
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| AUIRFR2905ZTRL |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Application: automotive industry
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| IRFB4127PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1096 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 128.91 грн |
| 10+ | 101.28 грн |
| 20+ | 92.08 грн |
| 50+ | 79.52 грн |
| IRF7324TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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| BAV199E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| BAV199E6433HTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
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| FM24CL04B-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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| BFP760H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 45GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 45GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.68 грн |
| IRFB4227PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Gate charge: 70nC
Power dissipation: 190W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Gate charge: 70nC
Power dissipation: 190W
Technology: HEXFET®
на замовлення 714 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 159.56 грн |
| 10+ | 117.19 грн |
| 25+ | 95.43 грн |
| 50+ | 81.20 грн |
| 100+ | 69.48 грн |
| 250+ | 59.43 грн |
| IRFB4227PBFXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 159.56 грн |
| 10+ | 92.91 грн |
| 25+ | 80.36 грн |
| SPP15N60CFDXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 13.4A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 13.4A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: 20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 84nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 13.4A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 13.4A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: 20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 84nC
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 169.47 грн |
| 200+ | 141.46 грн |
| IRF7424TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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| ICE2HS01GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: PMIC
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Application: SMPS
Operating temperature: -25...125°C
Output current: 6mA
Operating voltage: 11...18V DC
Frequency: 30kHz...1MHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: PMIC
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Application: SMPS
Operating temperature: -25...125°C
Output current: 6mA
Operating voltage: 11...18V DC
Frequency: 30kHz...1MHz
на замовлення 999 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.87 грн |
| 10+ | 137.28 грн |
| ITS6035SEPKXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 13A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 35mΩ
Output current: 13A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
Category: Power switches - integrated circuits
Description: IC: power switch; 13A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 35mΩ
Output current: 13A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 176.68 грн |
| SPP11N80C3 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 173.98 грн |
| 10+ | 119.70 грн |
| 50+ | 104.63 грн |
| IRFP3006PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 109 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 331.73 грн |
| 10+ | 224.33 грн |
| 25+ | 188.34 грн |
| BTS50085-1TMA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 7.2mΩ
Number of channels: 1
Output current: 38A
Supply voltage: 5...58V DC
Technology: High Current PROFET
Case: PG-TO220-7-4
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 7.2mΩ
Number of channels: 1
Output current: 38A
Supply voltage: 5...58V DC
Technology: High Current PROFET
Case: PG-TO220-7-4
Kind of integrated circuit: high-side
на замовлення 501 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 571.52 грн |
| 10+ | 481.31 грн |
| 25+ | 445.32 грн |
| 50+ | 423.55 грн |
| BTS441RG |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
на замовлення 270 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 306.49 грн |
| 5+ | 251.12 грн |
| 25+ | 225.17 грн |
| 100+ | 213.45 грн |
| BTS6133D |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Mounting: SMD
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Case: TO252-5
On-state resistance: 8mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 33A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Mounting: SMD
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Case: TO252-5
On-state resistance: 8mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 33A
на замовлення 1294 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 214.55 грн |
| 4+ | 173.27 грн |
| 10+ | 152.35 грн |
| 25+ | 134.77 грн |
| 40+ | 128.07 грн |
| 50+ | 126.40 грн |
| BSP752R |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
на замовлення 1798 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 131.61 грн |
| 10+ | 99.61 грн |
| 25+ | 95.43 грн |
| 50+ | 92.08 грн |
| 100+ | 88.73 грн |
| 250+ | 85.38 грн |
| BTS4300SGA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
на замовлення 2457 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 167.67 грн |
| 10+ | 101.28 грн |
| 25+ | 88.73 грн |
| 100+ | 72.82 грн |
| 250+ | 64.45 грн |
| 500+ | 58.59 грн |
| 1000+ | 53.57 грн |
| IPA70R360P7SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
на замовлення 106 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 100.06 грн |
| 10+ | 49.39 грн |
| 50+ | 48.55 грн |
| IPAN70R360P7SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
на замовлення 326 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 106.37 грн |
| 7+ | 63.62 грн |
| 10+ | 56.08 грн |
| IPN70R360P7SATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| IPS70R360P7SAKMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| BSP129H6327XTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
на замовлення 1263 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.19 грн |
| 13+ | 34.32 грн |
| 50+ | 27.20 грн |
| 100+ | 26.03 грн |






























