Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124849) > Сторінка 2037 з 2081
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BAT6202VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW Mounting: SMD Max. forward voltage: 1V Power dissipation: 0.1W Max. off-state voltage: 40V Load current: 20mA Semiconductor structure: single diode Case: SC79 Type of diode: Schottky switching |
на замовлення 2196 шт: термін постачання 14-30 дні (днів) |
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BAT62E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW Type of diode: Schottky switching Case: SOT143 Mounting: SMD Max. off-state voltage: 40V Load current: 20mA Semiconductor structure: double independent Max. forward voltage: 1V Power dissipation: 0.1W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF1018EPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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| BGA524N6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD operational amplifiersDescription: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape Type of integrated circuit: RF amplifier Bandwidth: 1550...1615MHz Number of channels: 1 Mounting: SMT Voltage supply range: 1.5...3.3V DC Case: TSNP6 Operating temperature: -40...85°C Integrated circuit features: low noise Kind of package: reel; tape Application: global navigation satellite systems (GPS) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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CY8C28452-24PVXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH Interface: GPIO; I2C; SPI; UART Mounting: SMD Case: SSOP28 Operating temperature: -40...85°C Supply voltage: 3...5.25V DC Number of inputs/outputs: 24 Memory: 1kB SRAM; 16kB FLASH Clock frequency: 24MHz Kind of core: 8-bit Type of integrated circuit: PSoC microcontroller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| IRL40SC209 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 478A Case: D2PAK-7 Mounting: SMD Kind of channel: enhancement On-state resistance: 0.6mΩ Gate charge: 267nC Power dissipation: 375W |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
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ICE3BR4765JGXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.32A Frequency: 65kHz Number of channels: 1 Case: PG-DSO-12 Mounting: SMD Operating temperature: -40...150°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...80% Power: 24/16.5W Application: SMPS Operating voltage: 10.5...25V DC |
на замовлення 728 шт: термін постачання 14-30 дні (днів) |
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BSC340N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 23A Power dissipation: 32W Case: PG-TDSON-8 On-state resistance: 34mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 Gate-source voltage: ±20V |
на замовлення 5286 шт: термін постачання 14-30 дні (днів) |
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BTS3800SL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.35A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-SCT595 On-state resistance: 0.8Ω Technology: HITFET® Operating temperature: -40...150°C Turn-on time: 3µs Turn-off time: 3µs |
на замовлення 684 шт: термін постачання 14-30 дні (днів) |
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CY8C3866AXI-040 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 67MHz; TQFP100; 8kBSRAM,64kBFLASH Type of integrated circuit: PSoC microcontroller Case: TQFP100 Mounting: SMD Clock frequency: 67MHz Interface: GPIO; I2C; SPI; UART; USB Integrated circuit features: watchdog Operating temperature: -40...85°C Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 72 Memory: 8kB SRAM; 64kB FLASH Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY8C4126LTI-M445 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; QFN68; 8kBSRAM,64kBFLASH Operating temperature: -40...85°C Type of integrated circuit: PSoC microcontroller Case: QFN68 Integrated circuit features: CapSense; LCD controller Mounting: SMD Kind of core: 32-bit Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 55 Memory: 8kB SRAM; 64kB FLASH Clock frequency: 24MHz Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||||||
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CY8C5868AXI-LP032 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP100 Number of inputs/outputs: 72 Supply voltage: 1.71...5.5V DC Operating temperature: -40...85°C Kind of core: 32-bit Interface: GPIO; I2C; SPI; UART; USB Integrated circuit features: watchdog Memory: 64kB SRAM; 256kB FLASH Clock frequency: 67MHz |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. | ||||||||||||||||||
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CY8C5868AXI-LP035 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH Interface: GPIO; I2C; SPI; UART; USB Clock frequency: 67MHz Integrated circuit features: watchdog Kind of core: 32-bit Memory: 64kB SRAM; 256kB FLASH Case: TQFP100 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 72 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. | ||||||||||||||||||
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BAS21E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT23; Ufmax: 1.25V; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Power dissipation: 0.35W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
на замовлення 2867 шт: термін постачання 14-30 дні (днів) |
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BSC014N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Mounting: SMD Technology: OptiMOS™ Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.4mΩ Power dissipation: 96W Kind of channel: enhancement Case: PG-TDSON-8 Gate-source voltage: ±20V Drain current: 100A Drain-source voltage: 40V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
| BFP183E7764HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 65mA Power dissipation: 0.25W Current gain: 70 Mounting: SMD Frequency: 8GHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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IRFP7430PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 404A Power dissipation: 366W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
на замовлення 356 шт: термін постачання 14-30 дні (днів) |
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IRFS7530TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7 Trade name: StrongIRFET Mounting: SMD Power dissipation: 375W Gate charge: 236nC Polarisation: unipolar Technology: HEXFET® Drain current: 240A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: D2PAK-7 On-state resistance: 1.4mΩ |
на замовлення 341 шт: термін постачання 14-30 дні (днів) |
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BSS139H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET On-state resistance: 30Ω Mounting: SMD Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Drain current: 0.1A Kind of channel: depletion Drain-source voltage: 250V Gate-source voltage: ±20V Case: SOT23 |
на замовлення 189 шт: термін постачання 14-30 дні (днів) |
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IPA60R190C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
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IRF7313TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8 Mounting: SMD Power dissipation: 2W Polarisation: unipolar Technology: HEXFET® Drain current: 6.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Kind of package: reel Case: SO8 |
на замовлення 3374 шт: термін постачання 14-30 дні (днів) |
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IRF7313TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| CY7C65213A-28PVXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB interface; GPIO x8,UART; USB controller; Full Speed Type of integrated circuit: USB interface Interface: GPIO x8; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: reel; tape Case: SSOP28 Integrated circuit features: bridge Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CY7C65213A-32LTXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB interface; GPIO x8,UART; USB controller; Full Speed Type of integrated circuit: USB interface Interface: GPIO x8; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: reel; tape Case: QFN32 Integrated circuit features: bridge Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| S25FL064LABMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 280 шт В кошику од. на суму грн. | |||||||||||||||||||
| S25FL064LABMFA011 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: tube Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 455 шт В кошику од. на суму грн. | |||||||||||||||||||
| S25FL064LABMFA013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 2100 шт В кошику од. на суму грн. | |||||||||||||||||||
| S25FL128LAGMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 560 шт В кошику од. на суму грн. | |||||||||||||||||||
| S25FL512SAGMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||||||||||
| S70FL01GSAGMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||||||||
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IPP220N25NFDAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ FD Polarisation: unipolar Drain-source voltage: 250V Drain current: 61A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF8736TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 3990 шт: термін постачання 14-30 дні (днів) |
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| ICE2QR2280ZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP7; flyback; Ubr: 800V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 39...65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -25...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 800V Application: SMPS Operating voltage: 10.5...25V DC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
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BSD840NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363 Type of transistor: N-MOSFET x2 Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.88A Power dissipation: 0.5W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 8808 шт: термін постачання 14-30 дні (днів) |
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BTS716GBXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.6...5.3A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: SO20 On-state resistance: 35mΩ Supply voltage: 5.5...40V DC Technology: Classic PROFET Turn-off time: 0.25ms Turn-on time: 270µs Power dissipation: 3.6W |
на замовлення 129 шт: термін постачання 14-30 дні (днів) |
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| IPB330P10NMATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
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IPB19DP10NMATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Case: D2PAK; TO263 On-state resistance: 0.149Ω Mounting: SMD Kind of channel: enhancement Gate charge: 45nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| S29GL064S80DHV020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | |||||||||||||||||||
| S29GL064S80DHV023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2200 шт В кошику од. на суму грн. | |||||||||||||||||||
| S29GL256S10DHV020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 100ns Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | |||||||||||||||||||
| S29GL256S10DHV023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 100ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2200 шт В кошику од. на суму грн. | |||||||||||||||||||
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IKD04N60RC2ATMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK Type of transistor: IGBT Technology: Field Stop; Trench Power dissipation: 36.6W Case: DPAK Mounting: SMD Gate-emitter voltage: ±20V Collector current: 8A Collector-emitter voltage: 600V Gate charge: 24nC Pulsed collector current: 12A Turn-off time: 90ns |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRLL014NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 2A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level |
на замовлення 9393 шт: термін постачання 14-30 дні (днів) |
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IRFB4615PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 35A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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BSC093N15NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 87A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 87A Power dissipation: 139W Case: PG-TDSON-8 On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 33nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
XMC4700 RELAX KIT | INFINEON TECHNOLOGIES |
Category: Development kits - othersDescription: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144 Type of development kit: ARM Infineon Family: XMC4700 Kit contents: development board with XMCmicrocontroller Components: XMC4700-F144 Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2 Connection: pin strips; RJ45; USB B micro x2 Number of add-on connectors: 1 Kind of architecture: Cortex M4 Application: building automation; CAV; motors; photovoltaics |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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XMC4800 RELAX ETHERCAT KIT | INFINEON TECHNOLOGIES |
Category: Development kits - othersDescription: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144 Type of development kit: ARM Infineon Family: XMC4800 Kit contents: development board with XMCmicrocontroller; expansion board Components: XMC4800-F144 Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2 Connection: pin strips; RJ45; USB 2.0 x2; USB B micro x2 Application: building automation; CAV; EtherCAT; motors; photovoltaics Number of add-on connectors: 2 Kind of architecture: Cortex M4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSC009NE2LS5IATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.9mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
| BGS12P2L6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switchesDescription: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz Mounting: SMD Bandwidth: 0.05...6GHz Supply voltage: 1.65...3.4V DC Type of integrated circuit: RF switch Application: telecommunication Output configuration: SPDT Case: TSLP-6-4 |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | |||||||||||||||||||
|
IPT015N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 243A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 169nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
IRLR2705TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 28A Power dissipation: 68W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 5192 шт: термін постачання 14-30 дні (днів) |
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| IRLR2705TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 20A Power dissipation: 68W Case: DPAK Mounting: SMD Kind of channel: enhancement Pulsed drain current: 110A On-state resistance: 40mΩ Gate-source voltage: ±16V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
|
IRLR6225TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 100A Power dissipation: 63W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 545 шт: термін постачання 14-30 дні (днів) |
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IRLR8743TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK Mounting: SMD Power dissipation: 135W Polarisation: unipolar Technology: HEXFET® Features of semiconductor devices: logic level Drain current: 160A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel Case: DPAK |
на замовлення 1410 шт: термін постачання 14-30 дні (днів) |
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IRLR3636TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 99A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IRLR2908TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 39A Power dissipation: 120W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
| IRLR3410TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of channel: enhancement Pulsed drain current: 60A On-state resistance: 0.105Ω Gate-source voltage: ±16V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
|
IRLR3915TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 61A Power dissipation: 120W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
IRFB4310ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 6mΩ Power dissipation: 250W Gate charge: 0.12µC Technology: HEXFET® Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFB4310ZPBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| BAT6202VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW
Mounting: SMD
Max. forward voltage: 1V
Power dissipation: 0.1W
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Case: SC79
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW
Mounting: SMD
Max. forward voltage: 1V
Power dissipation: 0.1W
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Case: SC79
Type of diode: Schottky switching
на замовлення 2196 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.25 грн |
| 21+ | 19.82 грн |
| 50+ | 14.76 грн |
| 100+ | 13.10 грн |
| 250+ | 11.19 грн |
| 500+ | 9.78 грн |
| 1000+ | 8.37 грн |
| BAT62E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Power dissipation: 0.1W
товару немає в наявності
В кошику
од. на суму грн.
| IRF1018EPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.61 грн |
| 6+ | 70.97 грн |
| 10+ | 62.85 грн |
| 50+ | 47.84 грн |
| BGA524N6E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.5...3.3V DC
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.5...3.3V DC
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
товару немає в наявності
В кошику
од. на суму грн.
| CY8C28452-24PVXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
товару немає в наявності
В кошику
од. на суму грн.
| IRL40SC209 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 478A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.6mΩ
Gate charge: 267nC
Power dissipation: 375W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 478A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.6mΩ
Gate charge: 267nC
Power dissipation: 375W
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| ICE3BR4765JGXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
на замовлення 728 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.86 грн |
| 25+ | 84.57 грн |
| 100+ | 78.77 грн |
| 500+ | 77.94 грн |
| BSC340N08NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
на замовлення 5286 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.97 грн |
| 10+ | 44.27 грн |
| 100+ | 31.34 грн |
| 500+ | 25.29 грн |
| 1000+ | 23.38 грн |
| 2000+ | 21.56 грн |
| 2500+ | 21.14 грн |
| 5000+ | 19.73 грн |
| BTS3800SL |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SCT595
On-state resistance: 0.8Ω
Technology: HITFET®
Operating temperature: -40...150°C
Turn-on time: 3µs
Turn-off time: 3µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SCT595
On-state resistance: 0.8Ω
Technology: HITFET®
Operating temperature: -40...150°C
Turn-on time: 3µs
Turn-off time: 3µs
на замовлення 684 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.61 грн |
| 10+ | 62.43 грн |
| 25+ | 52.40 грн |
| 100+ | 40.71 грн |
| 250+ | 34.82 грн |
| 500+ | 31.09 грн |
| CY8C3866AXI-040 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Mounting: SMD
Clock frequency: 67MHz
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 8-bit
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Mounting: SMD
Clock frequency: 67MHz
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 8-bit
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4126LTI-M445 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 24MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 24MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| CY8C5868AXI-LP032 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 67MHz
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 67MHz
товару немає в наявності
Мінімальне замовлення: 90 шт
В кошику
од. на суму грн.
| CY8C5868AXI-LP035 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Interface: GPIO; I2C; SPI; UART; USB
Clock frequency: 67MHz
Integrated circuit features: watchdog
Kind of core: 32-bit
Memory: 64kB SRAM; 256kB FLASH
Case: TQFP100
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Interface: GPIO; I2C; SPI; UART; USB
Clock frequency: 67MHz
Integrated circuit features: watchdog
Kind of core: 32-bit
Memory: 64kB SRAM; 256kB FLASH
Case: TQFP100
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 90 шт
В кошику
од. на суму грн.
| BAS21E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT23; Ufmax: 1.25V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT23; Ufmax: 1.25V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
на замовлення 2867 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.07 грн |
| 32+ | 13.35 грн |
| 100+ | 9.58 грн |
| 500+ | 6.71 грн |
| 1000+ | 5.37 грн |
| BSC014N04LSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.4mΩ
Power dissipation: 96W
Kind of channel: enhancement
Case: PG-TDSON-8
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.4mΩ
Power dissipation: 96W
Kind of channel: enhancement
Case: PG-TDSON-8
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BFP183E7764HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.25W
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.25W
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRFP7430PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 356 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.47 грн |
| 10+ | 140.95 грн |
| 25+ | 108.61 грн |
| IRFS7530TRL7PP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Trade name: StrongIRFET
Mounting: SMD
Power dissipation: 375W
Gate charge: 236nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: D2PAK-7
On-state resistance: 1.4mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Trade name: StrongIRFET
Mounting: SMD
Power dissipation: 375W
Gate charge: 236nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: D2PAK-7
On-state resistance: 1.4mΩ
на замовлення 341 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.23 грн |
| 10+ | 176.60 грн |
| 25+ | 156.70 грн |
| 100+ | 132.66 грн |
| BSS139H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
On-state resistance: 30Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.1A
Kind of channel: depletion
Drain-source voltage: 250V
Gate-source voltage: ±20V
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
On-state resistance: 30Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.1A
Kind of channel: depletion
Drain-source voltage: 250V
Gate-source voltage: ±20V
Case: SOT23
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.47 грн |
| 21+ | 20.40 грн |
| 100+ | 13.18 грн |
| IPA60R190C6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 172.33 грн |
| 10+ | 128.51 грн |
| IRF7313TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of package: reel
Case: SO8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of package: reel
Case: SO8
на замовлення 3374 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 68.75 грн |
| 12+ | 36.98 грн |
| 100+ | 29.77 грн |
| 250+ | 28.11 грн |
| 500+ | 27.03 грн |
| 1000+ | 26.12 грн |
| 2000+ | 25.21 грн |
| IRF7313TRPBFXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| CY7C65213A-28PVXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: SSOP28
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: SSOP28
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY7C65213A-32LTXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x8,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x8; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN32
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S25FL064LABMFA010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
Мінімальне замовлення: 280 шт
В кошику
од. на суму грн.
| S25FL064LABMFA011 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
товару немає в наявності
Мінімальне замовлення: 455 шт
В кошику
од. на суму грн.
| S25FL064LABMFA013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
Мінімальне замовлення: 2100 шт
В кошику
од. на суму грн.
| S25FL128LAGMFA010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
Мінімальне замовлення: 560 шт
В кошику
од. на суму грн.
| S25FL512SAGMFA010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| S70FL01GSAGMFA010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IPP220N25NFDAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF8736TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 3990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.43 грн |
| 11+ | 40.05 грн |
| 100+ | 27.69 грн |
| 500+ | 21.72 грн |
| 1000+ | 19.65 грн |
| 2000+ | 18.99 грн |
| ICE2QR2280ZXKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 800V
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 800V
Application: SMPS
Operating voltage: 10.5...25V DC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BSD840NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.88A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.88A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 8808 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.79 грн |
| 24+ | 17.66 грн |
| 50+ | 11.69 грн |
| 100+ | 9.70 грн |
| 250+ | 7.79 грн |
| 500+ | 6.80 грн |
| 1000+ | 5.97 грн |
| 3000+ | 5.14 грн |
| 6000+ | 4.81 грн |
| BTS716GBXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Turn-off time: 0.25ms
Turn-on time: 270µs
Power dissipation: 3.6W
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Turn-off time: 0.25ms
Turn-on time: 270µs
Power dissipation: 3.6W
на замовлення 129 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 324.12 грн |
| 5+ | 224.69 грн |
| 10+ | 211.43 грн |
| IPB330P10NMATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IPB19DP10NMATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Case: D2PAK; TO263
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Case: D2PAK; TO263
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| S29GL064S80DHV020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| S29GL064S80DHV023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2200 шт
В кошику
од. на суму грн.
| S29GL256S10DHV020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 260 шт
В кошику
од. на суму грн.
| S29GL256S10DHV023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2200 шт
В кошику
од. на суму грн.
| IKD04N60RC2ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 36.6W
Case: DPAK
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 600V
Gate charge: 24nC
Pulsed collector current: 12A
Turn-off time: 90ns
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 36.6W
Case: DPAK
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 600V
Gate charge: 24nC
Pulsed collector current: 12A
Turn-off time: 90ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRLL014NTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
на замовлення 9393 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.11 грн |
| 13+ | 33.58 грн |
| 25+ | 27.44 грн |
| 100+ | 20.40 грн |
| 500+ | 15.42 грн |
| 1000+ | 13.76 грн |
| 2500+ | 12.19 грн |
| 5000+ | 12.11 грн |
| IRFB4615PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.15 грн |
| 10+ | 71.30 грн |
| 20+ | 69.65 грн |
| 50+ | 66.33 грн |
| BSC093N15NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 87A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 87A
Power dissipation: 139W
Case: PG-TDSON-8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 87A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 87A
Power dissipation: 139W
Case: PG-TDSON-8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| XMC4700 RELAX KIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Family: XMC4700
Kit contents: development board with XMCmicrocontroller
Components: XMC4700-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB B micro x2
Number of add-on connectors: 1
Kind of architecture: Cortex M4
Application: building automation; CAV; motors; photovoltaics
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Family: XMC4700
Kit contents: development board with XMCmicrocontroller
Components: XMC4700-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB B micro x2
Number of add-on connectors: 1
Kind of architecture: Cortex M4
Application: building automation; CAV; motors; photovoltaics
товару немає в наявності
В кошику
од. на суму грн.
| XMC4800 RELAX ETHERCAT KIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Type of development kit: ARM Infineon
Family: XMC4800
Kit contents: development board with XMCmicrocontroller; expansion board
Components: XMC4800-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Type of development kit: ARM Infineon
Family: XMC4800
Kit contents: development board with XMCmicrocontroller; expansion board
Components: XMC4800-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Number of add-on connectors: 2
Kind of architecture: Cortex M4
товару немає в наявності
В кошику
од. на суму грн.
| BSC009NE2LS5IATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BGS12P2L6E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Mounting: SMD
Bandwidth: 0.05...6GHz
Supply voltage: 1.65...3.4V DC
Type of integrated circuit: RF switch
Application: telecommunication
Output configuration: SPDT
Case: TSLP-6-4
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Mounting: SMD
Bandwidth: 0.05...6GHz
Supply voltage: 1.65...3.4V DC
Type of integrated circuit: RF switch
Application: telecommunication
Output configuration: SPDT
Case: TSLP-6-4
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| IPT015N10N5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IRLR2705TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 5192 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.00 грн |
| 10+ | 50.24 грн |
| 50+ | 34.57 грн |
| 100+ | 29.52 грн |
| 500+ | 21.72 грн |
| 1000+ | 19.57 грн |
| 2000+ | 17.91 грн |
| 4000+ | 16.75 грн |
| IRLR2705TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 110A
On-state resistance: 40mΩ
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 110A
On-state resistance: 40mΩ
Gate-source voltage: ±16V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRLR6225TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 545 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 73.22 грн |
| 10+ | 45.52 грн |
| 50+ | 38.72 грн |
| 100+ | 35.90 грн |
| 250+ | 32.17 грн |
| IRLR8743TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Mounting: SMD
Power dissipation: 135W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Mounting: SMD
Power dissipation: 135W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
на замовлення 1410 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.18 грн |
| 10+ | 56.38 грн |
| 100+ | 53.06 грн |
| 500+ | 48.09 грн |
| 1000+ | 45.60 грн |
| IRLR3636TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRLR2908TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IRLR3410TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRLR3915TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IRFB4310ZPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 6mΩ
Power dissipation: 250W
Gate charge: 0.12µC
Technology: HEXFET®
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 6mΩ
Power dissipation: 250W
Gate charge: 0.12µC
Technology: HEXFET®
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| IRFB4310ZPBFXKMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
































