Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (128748) > Сторінка 2131 з 2146
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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IPD65R250E6XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3 Power dissipation: 208W Polarisation: unipolar Technology: CoolMOS™ Drain current: 16.1A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.25Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPD65R420CFDAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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IPD65R420CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3 Power dissipation: 83.3W Polarisation: unipolar Technology: CoolMOS™ Drain current: 8.7A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.42Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPD65R420CFDATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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IPD65R600C6BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Drain current: 7.3A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.6Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD65R600E6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Drain current: 7.3A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.6Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD65R600E6BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Drain current: 7.3A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.6Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD65R650CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 86W; DPAK,TO252 Power dissipation: 86W Gate charge: 23nC Polarisation: unipolar Drain current: 10.1A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Case: DPAK; TO252 On-state resistance: 0.54Ω Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| IPD65R660CFDAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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IPD65R660CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3 Power dissipation: 62.5W Polarisation: unipolar Technology: CoolMOS™ Drain current: 6A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.66Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD65R660CFDATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 700V; 6A; 63W; DPAK Power dissipation: 63W Gate charge: 22nC Technology: CoolMOS™ Drain current: 6A Kind of channel: enhancement Drain-source voltage: 700V Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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IPD65R660CFDBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3 Power dissipation: 62.5W Polarisation: unipolar Technology: CoolMOS™ Drain current: 6A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.66Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD65R950CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 Power dissipation: 36.7W Polarisation: unipolar Technology: CoolMOS™ Drain current: 3.9A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.95Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD65R950CFDATMA2 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: N-MOSFET; 650V; 3.9A; 36.7W; DPAK Power dissipation: 36.7W Gate charge: 14.1nC Technology: CoolMOS™ Drain current: 3.9A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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IPD65R950CFDBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 Power dissipation: 36.7W Polarisation: unipolar Technology: CoolMOS™ Drain current: 3.9A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.95Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPF013N04NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7 Type of transistor: N-MOSFET Technology: StrongIRFET™ 2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 239A Pulsed drain current: 956A Power dissipation: 231W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
IDWD30G120C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.65V Max. forward impulse current: 0.24kA Power dissipation: 332W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IDH10G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 71A Max. forward voltage: 1.8V Power dissipation: 89W Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 650V Heatsink thickness: 1.17...137mm Load current: 10A Kind of package: tube Semiconductor structure: single diode Leakage current: 2µA Case: PG-TO220-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IDH10G65C5XKSA2 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||||
|
IPA60R080P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP Type of transistor: N-MOSFET On-state resistance: 80mΩ Mounting: THT Power dissipation: 29W Polarisation: unipolar Technology: CoolMOS™ P7 Drain current: 23A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V Kind of package: tube Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPA60R080P7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||||
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IPA60R330P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Power dissipation: 32W Polarisation: unipolar Technology: CoolMOS™ P6 Drain current: 12A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.33Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPW60R330P6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 93W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP60R330P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3 Case: PG-TO220-3 Mounting: THT Kind of package: tube Power dissipation: 93W Polarisation: unipolar Technology: CoolMOS™ P6 Drain current: 12A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.33Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FF150R12KS4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; Ic: 225A; 62MM; 1.25kW Type of semiconductor module: IGBT Collector current: 225A Case: 62MM Gate-emitter voltage: ±20V Power dissipation: 1.25kW |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||||
| S25FL064LABNFI043 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||||
| S25FL064LABNFM040 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 490 шт В кошику од. на суму грн. | |||||||||||||||||
| S25FL064LABNFA043 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||||
| S25FL064LABNFB043 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||||
| S25FL064LABNFI041 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 615 шт В кошику од. на суму грн. | |||||||||||||||||
| S25FL064LABNFM041 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 1845 шт В кошику од. на суму грн. | |||||||||||||||||
| S25FL064LABNFM043 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||||
| S25FL064LABNFV043 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||||
| GS0650186LRMRXUSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: N-JFET / N-MOSFET; GaN; 700V; 23A; PDFN8 Technology: GaN Case: PDFN8 Mounting: SMD On-state resistance: 90mΩ Drain current: 23A Drain-source voltage: 700V Type of transistor: N-JFET / N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||||||
| GS0650306LRMRXUSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: N-JFET / N-MOSFET; GaN; 700V; 40A; PDFN8 Technology: GaN Case: PDFN8 Mounting: SMD On-state resistance: 54mΩ Drain current: 40A Drain-source voltage: 700V Type of transistor: N-JFET / N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||||||
| GS0650116LMRXUSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: N-JFET / N-MOSFET; GaN; 700V; 12.2A; PDFN8 Technology: GaN Case: PDFN8 Mounting: SMD On-state resistance: 0.18Ω Drain current: 12.2A Drain-source voltage: 700V Type of transistor: N-JFET / N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||||||
| GS0650116LRMRXUSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: N-JFET / N-MOSFET; GaN; 700V; 12.2A; PDFN8 Technology: GaN Case: PDFN8 Mounting: SMD On-state resistance: 0.18Ω Drain current: 12.2A Drain-source voltage: 700V Type of transistor: N-JFET / N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||||||
| GS0650146LMRXUSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 15.2A; PDFN8 Technology: GaN Case: PDFN8 Mounting: SMD On-state resistance: 138mΩ Gate charge: 2.7nC Drain current: 15.2A Drain-source voltage: 700V Type of transistor: N-JFET / N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||||||
| BTS426L1E3062AAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
| CY8C4147AZA-S295T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| CY8C4147AZE-S295 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | |||||||||||||||||
| CY8C4147AZS-S295 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | |||||||||||||||||
| CY8C4147AZS-S295T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| BFP193WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| BFP193E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
|
BSR802NL6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.5W; SC59 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 4871 шт: термін постачання 14-30 дні (днів) |
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BSZ034N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8 Technology: OptiMOS™ Drain current: 40A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TSDSON-8 On-state resistance: 3.4mΩ Mounting: SMD Power dissipation: 52W Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
| BSZ024N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
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FM24CL64B-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 1MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FM24V10-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 1Mb FRAM Interface: I2C Memory organisation: 128kx8bit Supply voltage: 2...3.6V DC Clock frequency: 3.4MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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FM18W08-SG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC Interface: parallel 8bit Memory: 256kb FRAM Kind of interface: parallel Memory organisation: 32kx8bit Case: SO28 Kind of memory: FRAM Mounting: SMD Supply voltage: 2.7...5.5V DC Access time: 70ns Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FM22L16-55-TG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4MbFRAM; parallel 16bit; 256kx16bit; 2.7÷3.6VDC Interface: parallel 16bit Memory: 4Mb FRAM Kind of interface: parallel Memory organisation: 256kx16bit Case: TSOP44 II Kind of memory: FRAM Mounting: SMD Supply voltage: 2.7...3.6V DC Access time: 55ns Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1350 шт В кошику од. на суму грн. | ||||||||||||||||
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TLS115D0LDXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2...14V Output current: 0.15A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±0.1% Number of channels: 1 Input voltage: 4...45V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLS115B0EJXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| TLS115D0EJXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
|
1EDC60H12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -6...6A Number of channels: 1 Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 3.1...17V; 13...35V Voltage class: 600/650/1200V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CY8C4147AZA-S285 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | |||||||||||||||||
| CY8C4147AZA-S285T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| CY8C4147AZE-S285T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| CY8C4147AZS-S285 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. |
| IPD65R250E6XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 16.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.25Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 16.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.25Ω
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R420CFDAATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R420CFDATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 8.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.42Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 8.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.42Ω
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R420CFDATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R600C6BTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R600E6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R600E6BTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R650CEAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 86W; DPAK,TO252
Power dissipation: 86W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 10.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Case: DPAK; TO252
On-state resistance: 0.54Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 86W; DPAK,TO252
Power dissipation: 86W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 10.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Case: DPAK; TO252
On-state resistance: 0.54Ω
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R660CFDAATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R660CFDATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.66Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.66Ω
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R660CFDATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 700V; 6A; 63W; DPAK
Power dissipation: 63W
Gate charge: 22nC
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 700V; 6A; 63W; DPAK
Power dissipation: 63W
Gate charge: 22nC
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R660CFDBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.66Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.66Ω
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R950CFDATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.95Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.95Ω
Mounting: SMD
товару немає в наявності
В кошику
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| IPD65R950CFDATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: N-MOSFET; 650V; 3.9A; 36.7W; DPAK
Power dissipation: 36.7W
Gate charge: 14.1nC
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: N-MOSFET; 650V; 3.9A; 36.7W; DPAK
Power dissipation: 36.7W
Gate charge: 14.1nC
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R950CFDBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.95Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.95Ω
Mounting: SMD
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В кошику
од. на суму грн.
| IPF013N04NF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 239A
Pulsed drain current: 956A
Power dissipation: 231W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 239A
Pulsed drain current: 956A
Power dissipation: 231W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| IDWD30G120C5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 0.24kA
Power dissipation: 332W
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В кошику
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| IDH10G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 71A
Max. forward voltage: 1.8V
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 2µA
Case: PG-TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 71A
Max. forward voltage: 1.8V
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 2µA
Case: PG-TO220-2
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| IDH10G65C5XKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| IPA60R080P7 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Mounting: THT
Power dissipation: 29W
Polarisation: unipolar
Technology: CoolMOS™ P7
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Mounting: THT
Power dissipation: 29W
Polarisation: unipolar
Technology: CoolMOS™ P7
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
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од. на суму грн.
| IPA60R080P7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| IPA60R330P6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
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| IPW60R330P6FKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
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В кошику
од. на суму грн.
| IPP60R330P6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 93W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 93W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
товару немає в наявності
В кошику
од. на суму грн.
| FF150R12KS4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 225A; 62MM; 1.25kW
Type of semiconductor module: IGBT
Collector current: 225A
Case: 62MM
Gate-emitter voltage: ±20V
Power dissipation: 1.25kW
Category: IGBT modules
Description: Module: IGBT; Ic: 225A; 62MM; 1.25kW
Type of semiconductor module: IGBT
Collector current: 225A
Case: 62MM
Gate-emitter voltage: ±20V
Power dissipation: 1.25kW
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| S25FL064LABNFI043 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| S25FL064LABNFM040 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
Мінімальне замовлення: 490 шт
В кошику
од. на суму грн.
| S25FL064LABNFA043 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| S25FL064LABNFB043 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| S25FL064LABNFI041 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 615 шт
В кошику
од. на суму грн.
| S25FL064LABNFM041 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Application: automotive
товару немає в наявності
Мінімальне замовлення: 1845 шт
В кошику
од. на суму грн.
| S25FL064LABNFM043 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| S25FL064LABNFV043 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| GS0650186LRMRXUSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 23A; PDFN8
Technology: GaN
Case: PDFN8
Mounting: SMD
On-state resistance: 90mΩ
Drain current: 23A
Drain-source voltage: 700V
Type of transistor: N-JFET / N-MOSFET
Category: NPN SMD transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 23A; PDFN8
Technology: GaN
Case: PDFN8
Mounting: SMD
On-state resistance: 90mΩ
Drain current: 23A
Drain-source voltage: 700V
Type of transistor: N-JFET / N-MOSFET
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| GS0650306LRMRXUSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 40A; PDFN8
Technology: GaN
Case: PDFN8
Mounting: SMD
On-state resistance: 54mΩ
Drain current: 40A
Drain-source voltage: 700V
Type of transistor: N-JFET / N-MOSFET
Category: NPN SMD transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 40A; PDFN8
Technology: GaN
Case: PDFN8
Mounting: SMD
On-state resistance: 54mΩ
Drain current: 40A
Drain-source voltage: 700V
Type of transistor: N-JFET / N-MOSFET
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| GS0650116LMRXUSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 12.2A; PDFN8
Technology: GaN
Case: PDFN8
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 12.2A
Drain-source voltage: 700V
Type of transistor: N-JFET / N-MOSFET
Category: NPN SMD transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 12.2A; PDFN8
Technology: GaN
Case: PDFN8
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 12.2A
Drain-source voltage: 700V
Type of transistor: N-JFET / N-MOSFET
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| GS0650116LRMRXUSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 12.2A; PDFN8
Technology: GaN
Case: PDFN8
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 12.2A
Drain-source voltage: 700V
Type of transistor: N-JFET / N-MOSFET
Category: NPN SMD transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 12.2A; PDFN8
Technology: GaN
Case: PDFN8
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 12.2A
Drain-source voltage: 700V
Type of transistor: N-JFET / N-MOSFET
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| GS0650146LMRXUSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 15.2A; PDFN8
Technology: GaN
Case: PDFN8
Mounting: SMD
On-state resistance: 138mΩ
Gate charge: 2.7nC
Drain current: 15.2A
Drain-source voltage: 700V
Type of transistor: N-JFET / N-MOSFET
Category: NPN SMD transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; 700V; 15.2A; PDFN8
Technology: GaN
Case: PDFN8
Mounting: SMD
On-state resistance: 138mΩ
Gate charge: 2.7nC
Drain current: 15.2A
Drain-source voltage: 700V
Type of transistor: N-JFET / N-MOSFET
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| BTS426L1E3062AAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY8C4147AZA-S295T |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| CY8C4147AZE-S295 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| CY8C4147AZS-S295 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| CY8C4147AZS-S295T |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| BFP193WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BFP193E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BSR802NL6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.5W; SC59
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.5W; SC59
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 4871 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.29 грн |
| 12+ | 35.89 грн |
| 14+ | 31.03 грн |
| 50+ | 22.48 грн |
| 100+ | 19.79 грн |
| 500+ | 15.01 грн |
| 1000+ | 13.50 грн |
| 3000+ | 11.66 грн |
| BSZ034N04LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Technology: OptiMOS™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TSDSON-8
On-state resistance: 3.4mΩ
Mounting: SMD
Power dissipation: 52W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Technology: OptiMOS™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TSDSON-8
On-state resistance: 3.4mΩ
Mounting: SMD
Power dissipation: 52W
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BSZ024N04LS6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FM24CL64B-G |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
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| FM24V10-G |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: I2C
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: I2C
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1463.12 грн |
| FM18W08-SG |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC
Interface: parallel 8bit
Memory: 256kb FRAM
Kind of interface: parallel
Memory organisation: 32kx8bit
Case: SO28
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC
Interface: parallel 8bit
Memory: 256kb FRAM
Kind of interface: parallel
Memory organisation: 32kx8bit
Case: SO28
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| FM22L16-55-TG |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; parallel 16bit; 256kx16bit; 2.7÷3.6VDC
Interface: parallel 16bit
Memory: 4Mb FRAM
Kind of interface: parallel
Memory organisation: 256kx16bit
Case: TSOP44 II
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Access time: 55ns
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; parallel 16bit; 256kx16bit; 2.7÷3.6VDC
Interface: parallel 16bit
Memory: 4Mb FRAM
Kind of interface: parallel
Memory organisation: 256kx16bit
Case: TSOP44 II
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Access time: 55ns
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1350 шт
В кошику
од. на суму грн.
| TLS115D0LDXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
товару немає в наявності
В кошику
од. на суму грн.
| TLS115B0EJXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLS115D0EJXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 1EDC60H12AHXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
товару немає в наявності
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од. на суму грн.
| CY8C4147AZA-S285 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| CY8C4147AZA-S285T |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| CY8C4147AZE-S285T |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| CY8C4147AZS-S285 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.















