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IPB020N10N5ATMA1 IPB020N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB020N10N5LF IPB020N10N5LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB100N10S305ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
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IAUC100N10S5L040ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IAUC100N10S5L054ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IAUC100N10S5N040ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BFR193FH6327XTSA1 INFINEON TECHNOLOGIES bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT723
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
на замовлення 42000 шт:
термін постачання 21-30 дні (днів)
3000+7.06 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DD340N22SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE5F0EB1BF3D1&compId=DD340N22S.pdf?ci_sign=e5eda1c795ac4dba183156bb0a2d75f5dfcbb752 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
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DD340N16SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E0203826933D1&compId=DD340N16S.pdf?ci_sign=a5ae5bb435ffb8b37d67c89c7429010eb38ef3d1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
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DD340N18S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E098F1DA9D3D1&compId=DD340N18S.pdf?ci_sign=d69aa001778daf2cf5654791e11fdee655d4a9fd Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
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BSC040N10NS5SCATMA1 INFINEON TECHNOLOGIES Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
4000+154.08 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRF7469TRPBF IRF7469TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A4DAD4E937F1A303005056AB0C4F&compId=irf7469pbf.pdf?ci_sign=4f9a0459f93e314d75063acd13e89c05d9ddee28 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPP111N15N3GXKSA1 IPP111N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8BEA3643E11C&compId=IPP111N15N3G-DTE.pdf?ci_sign=61da3a9c2d92c5d511a8d5d8168ea3865f37b927 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11.1mΩ
Gate-source voltage: ±20V
Drain current: 83A
Drain-source voltage: 150V
Power dissipation: 214W
на замовлення 219 шт:
термін постачання 21-30 дні (днів)
2+244.45 грн
Мінімальне замовлення: 2
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IPP330P10NMAKSA1 INFINEON TECHNOLOGIES Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f Category: Transistors - Unclassified
Description: IPP330P10NMAKSA1
на замовлення 598 шт:
термін постачання 21-30 дні (днів)
50+185.92 грн
200+155.86 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
TLE7250GVIOXUMA2 INFINEON TECHNOLOGIES Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56 Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 52500 шт:
термін постачання 21-30 дні (днів)
2500+105.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
XMC4700E196F1536AAXQMA1 XMC4700E196F1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4700
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
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IRS25751LTRPBF INFINEON TECHNOLOGIES irs25751lpbf.pdf?fileId=5546d462533600a40153567b31da2837 Category: Unclassified
Description: IRS25751LTRPBF
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+42.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPB018N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 187A; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 187A
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
800+68.52 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BSS127IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
на замовлення 42000 шт:
термін постачання 21-30 дні (днів)
3000+3.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
S25FL256LAGNFM010 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL256LAGNFM013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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IRF135B203 IRF135B203 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A1883DA1C219E143&compId=irf135b203.pdf?ci_sign=447bf209f2421944bd8c23f1b6b7cb8ed05b6797 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain current: 91A
Drain-source voltage: 135V
Power dissipation: 441W
Pulsed drain current: 512A
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
3+194.53 грн
10+151.86 грн
50+131.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SPB20N60S5ATMA1 INFINEON TECHNOLOGIES SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+192.81 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IRF100P219AKMA1 INFINEON TECHNOLOGIES Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
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BAS4006E6327HTSA1 BAS4006E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
Mounting: SMD
Case: SOT23
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
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BAS4006WH6327XTSA1 BAS4006WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
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BAS4006E6433HTMA1 INFINEON TECHNOLOGIES INFNS19700-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
10000+3.76 грн
Мінімальне замовлення: 10000
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XMC4104F64K64ABXQSA1 XMC4104F64K64ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 35
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Kind of architecture: Cortex M4
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Family: XMC4100
Kind of core: 32-bit
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
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XMC4500F100K1024ACXQSA1 XMC4500F100K1024ACXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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XMC4500E144F1024ACXQSA1 XMC4500E144F1024ACXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
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XMC4500E144X1024ACXQSA1 XMC4500E144X1024ACXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...105°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
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BSB165N15NZ3GXUMA1 BSB165N15NZ3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB14E6620611C&compId=BSB165N15NZ3G-DTE.pdf?ci_sign=dd418a760ded1deee6217633abfb617c5e3612cb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 16.5mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Drain current: 45A
Drain-source voltage: 150V
Polarisation: unipolar
Case: CanPAK™ MZ; MG-WDSON-2
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BTN8962TAAUMA1 BTN8962TAAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF185DE8D6A8745&compId=BTN8962TA.pdf?ci_sign=6c5456d10cf0b4baf788f9d1d1f4df19bed07ba9 Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Case: PG-TO263-7
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Output current: -27...30A
Number of channels: 1
Operating voltage: 5.5...40V DC
Topology: MOSFET half-bridge
Technology: NovalithIC™
Kind of integrated circuit: IMC; motor controller
Application: DC motors
Type of integrated circuit: driver
Operating temperature: -40...150°C
на замовлення 597 шт:
термін постачання 21-30 дні (днів)
2+332.25 грн
10+234.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCR08PNH6327 BCR08PNH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6AB0B73348469&compId=BCR08PNH6327.pdf?ci_sign=33c762796ef2bb8acd2b0c3413b906d9aa06ed86 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
на замовлення 2764 шт:
термін постачання 21-30 дні (днів)
40+11.88 грн
45+9.75 грн
100+8.63 грн
500+7.51 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
BCR08PNH6327XTSA1 INFINEON TECHNOLOGIES bcr08pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144068b8bc02fd Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Semiconductor structure: double
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
3000+5.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FP20R06W1E3B11BOMA1 FP20R06W1E3B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter
Technology: EasyPIM™ 1B
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
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IMZ120R030M1HXKSA1 IMZ120R030M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZ120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdcc776696 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Pulsed drain current: 150A
Gate-source voltage: -7...23V
Drain current: 45A
On-state resistance: 57mΩ
Power dissipation: 114W
Polarisation: unipolar
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1620.80 грн
В кошику  од. на суму  грн.
BCR602XTSA1 BCR602XTSA1 INFINEON TECHNOLOGIES Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 10mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...60V DC
Protection: overheating OTP
на замовлення 1566 шт:
термін постачання 21-30 дні (днів)
12+37.87 грн
16+25.42 грн
25+24.94 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
IPD35N10S3L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
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SPP15P10PLHXKSA1 SPP15P10PLHXKSA1 INFINEON TECHNOLOGIES SPP15P10PLHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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S25FL064LABMFA003 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 108MHz
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IPL60R104C7AUMA1 IPL60R104C7AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5B331C4E0E143&compId=IPL60R104C7.pdf?ci_sign=76f98e65114e797aa5abafdd5744d3beaeb913fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
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IRF6727MTRPBF IRF6727MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F719561A82EF1A303005056AB0C4F&compId=irf6727mpbf.pdf?ci_sign=0d47fe75e18f0aeb0e9cfe7b5a6140800bd8f964 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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F4150R12KS4BOSA1 F4150R12KS4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA585AEB73C81A0C4&compId=F4150R12KS4BOSA1.pdf?ci_sign=bcef10772012161925ebe1847340da5b430f4f81 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Technology: EconoPACK™ 3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x2; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
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FS150R12KT4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C87F547E493D7&compId=FS150R12KT4.pdf?ci_sign=b9e2fda300a75c51352ce08e24e35235e6476809 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: EconoPACK™ 3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 750W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
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BFN24E6327 BFN24E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C80812817AA469&compId=BFN24.pdf?ci_sign=f068f47347575ac45203495cc5a97ebd6f12e29c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 250V; 0.2A; 0.36W; SOT23
Mounting: SMD
Collector-emitter voltage: 250V
Frequency: 70MHz
Polarisation: bipolar
Type of transistor: NPN
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.36W
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IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E8299B4771BF&compId=IPW60R125C6-DTE.pdf?ci_sign=2cd58f7e86f660b20c7fc99d26ffae291963f804 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R160P6FKSA1 IPW60R160P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595325472C251BF&compId=IPW60R160P6-DTE.pdf?ci_sign=47ac9163035aeb74dc0348932449acacc7cc8b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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CY7C1460KV33-200AXCT INFINEON TECHNOLOGIES ?docID=53657 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
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CY7C1460KVE33-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
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CY7C1460KV33-200AXC INFINEON TECHNOLOGIES ?docID=53657 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
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IRF150P220AKMA1 INFINEON TECHNOLOGIES Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 316A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 316A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA80R750P7XKSA1 IPA80R750P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD1AA640E0143&compId=IPA80R750P7.pdf?ci_sign=4f7ec53a557f057124394852a266cc03e1af40b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD
Mounting: THT
Case: TO220FP
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 26W
Drain-source voltage: 800V
на замовлення 470 шт:
термін постачання 21-30 дні (днів)
4+115.34 грн
10+68.74 грн
50+55.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPI020N06NAKSA1 IPI020N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699409E46E7411C&compId=IPI020N06N-DTE.pdf?ci_sign=ad868dfc0c42fcc58379d7682150801ddb0f6b0a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
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IPC50N04S5-5R8 IPC50N04S5-5R8 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA68F77C56274A&compId=IPC50N04S55R8.pdf?ci_sign=4e78ae42cfa7aad0122f5bfeac8190ff8fcdfe0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPP60R199CPXKSA1 IPP60R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59453B6F1F651BF&compId=IPP60R199CP-DTE.pdf?ci_sign=92d70687cb740539bf38418ae0fd651c7a6f0e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
2+245.32 грн
10+163.05 грн
Мінімальне замовлення: 2
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IRS25401PBF IRS25401PBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Supply voltage: 8...16.6V DC
Voltage class: 200V
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
7+71.44 грн
Мінімальне замовлення: 7
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IPP65R190C6XKSA1 IPP65R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IPP65R065C7XKSA1 IPP65R065C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93C310F5351BF&compId=IPP65R065C7-DTE.pdf?ci_sign=09a8b07890ce95ee833156022ebe0e693d191243 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IPB020N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a
IPB020N10N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
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IPB020N10N5LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8
IPB020N10N5LF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
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IPB100N10S305ATMA1 Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
товару немає в наявності
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IAUC100N10S5L040ATMA1 Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
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IAUC100N10S5L054ATMA1 Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IAUC100N10S5N040ATMA1 Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
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BFR193FH6327XTSA1 bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT723
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
на замовлення 42000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+7.06 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DD340N22SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE5F0EB1BF3D1&compId=DD340N22S.pdf?ci_sign=e5eda1c795ac4dba183156bb0a2d75f5dfcbb752
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
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DD340N16SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E0203826933D1&compId=DD340N16S.pdf?ci_sign=a5ae5bb435ffb8b37d67c89c7429010eb38ef3d1
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
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DD340N18S pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E098F1DA9D3D1&compId=DD340N18S.pdf?ci_sign=d69aa001778daf2cf5654791e11fdee655d4a9fd
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
BSC040N10NS5SCATMA1 Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+154.08 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRF7469TRPBF pVersion=0046&contRep=ZT&docId=E221A4DAD4E937F1A303005056AB0C4F&compId=irf7469pbf.pdf?ci_sign=4f9a0459f93e314d75063acd13e89c05d9ddee28
IRF7469TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP111N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8BEA3643E11C&compId=IPP111N15N3G-DTE.pdf?ci_sign=61da3a9c2d92c5d511a8d5d8168ea3865f37b927
IPP111N15N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11.1mΩ
Gate-source voltage: ±20V
Drain current: 83A
Drain-source voltage: 150V
Power dissipation: 214W
на замовлення 219 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+244.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP330P10NMAKSA1 Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPP330P10NMAKSA1
на замовлення 598 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+185.92 грн
200+155.86 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
TLE7250GVIOXUMA2 Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 52500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+105.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
XMC4700E196F1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4700E196F1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4700
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
товару немає в наявності
В кошику  од. на суму  грн.
IRS25751LTRPBF irs25751lpbf.pdf?fileId=5546d462533600a40153567b31da2837
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: IRS25751LTRPBF
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+42.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPB018N06NF2SATMA1 Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 187A; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 187A
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
800+68.52 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BSS127IXTSA1 Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
на замовлення 42000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+3.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
S25FL256LAGNFM010 INFN-S-A0017271261-1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S25FL256LAGNFM013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
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IRF135B203 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A1883DA1C219E143&compId=irf135b203.pdf?ci_sign=447bf209f2421944bd8c23f1b6b7cb8ed05b6797
IRF135B203
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain current: 91A
Drain-source voltage: 135V
Power dissipation: 441W
Pulsed drain current: 512A
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+194.53 грн
10+151.86 грн
50+131.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SPB20N60S5ATMA1 SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+192.81 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IRF100P219AKMA1 Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BAS4006E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4006E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
Mounting: SMD
Case: SOT23
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
товару немає в наявності
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BAS4006WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4006WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
товару немає в наявності
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BAS4006E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+3.76 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
XMC4104F64K64ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104F64K64ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 35
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Kind of architecture: Cortex M4
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Family: XMC4100
Kind of core: 32-bit
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
товару немає в наявності
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XMC4500F100K1024ACXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F100K1024ACXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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XMC4500E144F1024ACXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500E144F1024ACXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
товару немає в наявності
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XMC4500E144X1024ACXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500E144X1024ACXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...105°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LFBGA-144
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BSB165N15NZ3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB14E6620611C&compId=BSB165N15NZ3G-DTE.pdf?ci_sign=dd418a760ded1deee6217633abfb617c5e3612cb
BSB165N15NZ3GXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 16.5mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Drain current: 45A
Drain-source voltage: 150V
Polarisation: unipolar
Case: CanPAK™ MZ; MG-WDSON-2
товару немає в наявності
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BTN8962TAAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF185DE8D6A8745&compId=BTN8962TA.pdf?ci_sign=6c5456d10cf0b4baf788f9d1d1f4df19bed07ba9
BTN8962TAAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Case: PG-TO263-7
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Output current: -27...30A
Number of channels: 1
Operating voltage: 5.5...40V DC
Topology: MOSFET half-bridge
Technology: NovalithIC™
Kind of integrated circuit: IMC; motor controller
Application: DC motors
Type of integrated circuit: driver
Operating temperature: -40...150°C
на замовлення 597 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+332.25 грн
10+234.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCR08PNH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6AB0B73348469&compId=BCR08PNH6327.pdf?ci_sign=33c762796ef2bb8acd2b0c3413b906d9aa06ed86
BCR08PNH6327
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
на замовлення 2764 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
40+11.88 грн
45+9.75 грн
100+8.63 грн
500+7.51 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
BCR08PNH6327XTSA1 bcr08pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144068b8bc02fd
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Semiconductor structure: double
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+5.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FP20R06W1E3B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e
FP20R06W1E3B11BOMA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter
Technology: EasyPIM™ 1B
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
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IMZ120R030M1HXKSA1 Infineon-IMZ120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdcc776696
IMZ120R030M1HXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Pulsed drain current: 150A
Gate-source voltage: -7...23V
Drain current: 45A
On-state resistance: 57mΩ
Power dissipation: 114W
Polarisation: unipolar
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1620.80 грн
В кошику  од. на суму  грн.
BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 10mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...60V DC
Protection: overheating OTP
на замовлення 1566 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.87 грн
16+25.42 грн
25+24.94 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
IPD35N10S3L26ATMA1 Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
товару немає в наявності
В кошику  од. на суму  грн.
SPP15P10PLHXKSA1 SPP15P10PLHXKSA1-DTE.pdf
SPP15P10PLHXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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S25FL064LABMFA003 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 108MHz
товару немає в наявності
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IPL60R104C7AUMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5B331C4E0E143&compId=IPL60R104C7.pdf?ci_sign=76f98e65114e797aa5abafdd5744d3beaeb913fa
IPL60R104C7AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
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IRF6727MTRPBF pVersion=0046&contRep=ZT&docId=E21F719561A82EF1A303005056AB0C4F&compId=irf6727mpbf.pdf?ci_sign=0d47fe75e18f0aeb0e9cfe7b5a6140800bd8f964
IRF6727MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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F4150R12KS4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA585AEB73C81A0C4&compId=F4150R12KS4BOSA1.pdf?ci_sign=bcef10772012161925ebe1847340da5b430f4f81
F4150R12KS4BOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Technology: EconoPACK™ 3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x2; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
товару немає в наявності
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FS150R12KT4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C87F547E493D7&compId=FS150R12KT4.pdf?ci_sign=b9e2fda300a75c51352ce08e24e35235e6476809
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: EconoPACK™ 3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 750W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
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BFN24E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C80812817AA469&compId=BFN24.pdf?ci_sign=f068f47347575ac45203495cc5a97ebd6f12e29c
BFN24E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 250V; 0.2A; 0.36W; SOT23
Mounting: SMD
Collector-emitter voltage: 250V
Frequency: 70MHz
Polarisation: bipolar
Type of transistor: NPN
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.36W
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IPW60R125C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E8299B4771BF&compId=IPW60R125C6-DTE.pdf?ci_sign=2cd58f7e86f660b20c7fc99d26ffae291963f804
IPW60R125C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IPW60R070C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965
IPW60R070C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R160P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595325472C251BF&compId=IPW60R160P6-DTE.pdf?ci_sign=47ac9163035aeb74dc0348932449acacc7cc8b4b
IPW60R160P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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CY7C1460KV33-200AXCT ?docID=53657
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
товару немає в наявності
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CY7C1460KVE33-200AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1460KV33-200AXC ?docID=53657
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
товару немає в наявності
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IRF150P220AKMA1 Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 316A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 316A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA80R750P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD1AA640E0143&compId=IPA80R750P7.pdf?ci_sign=4f7ec53a557f057124394852a266cc03e1af40b5
IPA80R750P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD
Mounting: THT
Case: TO220FP
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 26W
Drain-source voltage: 800V
на замовлення 470 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+115.34 грн
10+68.74 грн
50+55.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPI020N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699409E46E7411C&compId=IPI020N06N-DTE.pdf?ci_sign=ad868dfc0c42fcc58379d7682150801ddb0f6b0a
IPI020N06NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
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IPC50N04S5-5R8 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA68F77C56274A&compId=IPC50N04S55R8.pdf?ci_sign=4e78ae42cfa7aad0122f5bfeac8190ff8fcdfe0c
IPC50N04S5-5R8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59453B6F1F651BF&compId=IPP60R199CP-DTE.pdf?ci_sign=92d70687cb740539bf38418ae0fd651c7a6f0e05
IPP60R199CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+245.32 грн
10+163.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS25401PBF irs25401pbf.pdf
IRS25401PBF
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Supply voltage: 8...16.6V DC
Voltage class: 200V
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+71.44 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IPP65R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f
IPP65R190C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R065C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93C310F5351BF&compId=IPP65R065C7-DTE.pdf?ci_sign=09a8b07890ce95ee833156022ebe0e693d191243
IPP65R065C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
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