Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149366) > Сторінка 2479 з 2490

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Ціна
BTS72002EPCXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D8F4E5FCD218BF&compId=BTS72002EPC.pdf?ci_sign=650657063cacfe9a7b8754ecbde50773a4a12541 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Turn-on time: 170µs
Turn-off time: 0.15ms
товару немає в наявності
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BSZ100N06NSATMA1 BSZ100N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E418FECF9E11C&compId=BSZ100N06NS-DTE.pdf?ci_sign=2c2fadeec5f1af9aa66da941965b2afe221347ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R190E6XKSA1 IPA65R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2CAECCFE3B1BF&compId=IPA65R190E6-DTE.pdf?ci_sign=021fbd4cdff9db126bcf3787abcc493e074c7a0c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 650V
Kind of package: tube
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
2+249.82 грн
7+153.59 грн
17+145.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BAT6405E6327HTSA1 BAT6405E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Case: SOT23
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
на замовлення 1521 шт:
термін постачання 21-30 дні (днів)
53+8.08 грн
65+6.18 грн
69+5.78 грн
80+4.96 грн
100+4.58 грн
265+3.51 грн
729+3.32 грн
Мінімальне замовлення: 53
В кошику  од. на суму  грн.
BAT6406E6327HTSA1 BAT6406E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
на замовлення 5779 шт:
термін постачання 21-30 дні (днів)
36+11.94 грн
52+7.76 грн
57+7.05 грн
100+5.04 грн
259+3.59 грн
712+3.40 грн
1000+3.38 грн
3000+3.27 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BAT64E6327HTSA1 BAT64E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: single diode
на замовлення 2425 шт:
термін постачання 21-30 дні (днів)
22+19.61 грн
35+11.48 грн
46+8.65 грн
58+6.92 грн
100+5.60 грн
291+3.20 грн
799+3.02 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 186nC
Trade name: StrongIRFET
на замовлення 926 шт:
термін постачання 21-30 дні (днів)
3+148.36 грн
10+117.17 грн
12+79.96 грн
33+75.21 грн
100+74.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB7734PBF IRFB7734PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5DC2D657A469&compId=IRFB7734PBF.pdf?ci_sign=bc7cc28ffb0486c427e821c8b7317f1232fe5615 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCR420U BCR420U INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61691658B15EA&compId=BCR420U.pdf?ci_sign=0ca17a34f60a3e7fc7f59a90f29534577755f717 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
25+18.59 грн
30+15.04 грн
75+13.06 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BCR421UE6327 BCR421UE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD618EC6C8DF5EA&compId=BCR421UE6327.pdf?ci_sign=dca36e6257f451c4dcb566801e7a45f24426b061 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming; PWM
на замовлення 1184 шт:
термін постачання 21-30 дні (днів)
8+59.68 грн
17+23.43 грн
25+20.27 грн
100+19.00 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BCR420UE6327HTSA1 BCR420UE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Integrated circuit features: linear dimming
Topology: single transistor
Type of integrated circuit: driver
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Operating voltage: 1.4...40V DC
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
15+28.99 грн
18+22.17 грн
21+19.56 грн
25+16.78 грн
72+12.98 грн
198+12.27 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BCR420UE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming
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BCR421UE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming; PWM
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SAK-TC1797-384F150E INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B44B48D9EF6469&compId=SAK-TC1797-384F150E.pdf?ci_sign=23a456cb26f03936757134008688725281715175 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Mounting: SMD
Interface: I2C; SPI; UART
Supply voltage: 3.5...5V DC
Memory: 3MB FLASH
Case: BGA416
Type of integrated circuit: microcontroller
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BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3DAAD43E211C&compId=BSZ100N06LS3G-DTE.pdf?ci_sign=4f5c55c03ed9fd06aee860c65e9b034596f8d145 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPP100N06S2L05AKSA2 INFINEON TECHNOLOGIES Infineon-IPP_B100N06S2L_05-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4322a685747&ack=t Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
50+199.51 грн
200+166.26 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSC098N10NS5ATMA1 BSC098N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3879884FEB9E11C&compId=BSC098N10NS5-DTE.pdf?ci_sign=31742ccebec498427e0db6b79cb1135e09669434 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Kind of channel: enhancement
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
на замовлення 214 шт:
термін постачання 21-30 дні (днів)
2+259.68 грн
6+183.68 грн
14+174.18 грн
30+170.22 грн
60+167.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R280CFD7 IPD60R280CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA746BF105C74A&compId=IPD60R280CFD7.pdf?ci_sign=eee2466600e65dfdc3beed43fe5dc29972e84cf0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 18nC
On-state resistance: 0.536Ω
Drain current: 6A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
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IDD06SG60C IDD06SG60C INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB82C54BF690FA8&compId=IDD06SG60C-DTE.pdf?ci_sign=851c90a389fd4d372f0c67b2bf7e56c16a8d899f Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 6A; 71W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO252-3
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward voltage: 2.1V
Max. forward impulse current: 23A
Power dissipation: 71W
Technology: CoolSiC™ 3G; SiC
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IDD05SG60C IDD05SG60C INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB822D8248D0FA8&compId=IDD05SG60C-DTE.pdf?ci_sign=837a226ff9e89a535c9c73fce29d66dc2f7d17a4 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 5A; 56W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: PG-TO252-3
Kind of package: reel; tape
Max. forward voltage: 2.1V
Max. forward impulse current: 18A
Power dissipation: 56W
Technology: CoolSiC™ 3G; SiC
Leakage current: 0.4µA
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BTS3205NHUSA1 BTS3205NHUSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4F8FB81166745&compId=BTS3205N.pdf?ci_sign=05ecda57c6e83a44cef7414def4b21c318e9e498 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 600mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Technology: HITFET®
Output voltage: 42V
Output current: 0.6A
Mounting: SMD
Case: SOT223-4
Kind of output: N-Channel
Kind of integrated circuit: low-side
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BCV49H6327XTSA1 INFINEON TECHNOLOGIES BCV29_49.pdf Category: Transistors - Unclassified
Description: BCV49H6327XTSA1
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
1000+10.91 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BSP50H6327XTSA1 BSP50H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586991C042987A469&compId=BSP50H6327XTSA1.pdf?ci_sign=542758f57bfb5844573fe09b784a03254dfb5c91 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
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BTS5210L BTS5210L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987AF60A62E469&compId=BTS5210L.pdf?ci_sign=1643026f07659dfa42b5687377d90babcf2df106 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 1.8A
On-state resistance: 0.11Ω
Number of channels: 2
Supply voltage: 5.5...40V DC
Kind of integrated circuit: high-side
Case: BSOP12
Technology: Classic PROFET
на замовлення 549 шт:
термін постачання 21-30 дні (днів)
2+321.44 грн
6+167.05 грн
16+157.55 грн
250+151.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP042N03LGXKSA1 IPP042N03LGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60A532413011C&compId=IPP042N03LG-DTE.pdf?ci_sign=120b1ad691b43ca00d9d29c84f30c36acf957b5b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
6+81.00 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2ED2184S06FXUMA1 2ED2184S06FXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2184-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d76cf229fb Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
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1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
на замовлення 603 шт:
термін постачання 21-30 дні (днів)
3+183.31 грн
5+160.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1EDC30I12MHXUMA1 1EDC30I12MHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -3...3A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 998 шт:
термін постачання 21-30 дні (днів)
2+219.12 грн
7+154.38 грн
17+145.68 грн
50+140.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Number of channels: 1
Voltage class: 1.2kV
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 2096 шт:
термін постачання 21-30 дні (днів)
4+116.81 грн
10+96.59 грн
13+76.80 грн
34+72.84 грн
250+70.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Power dissipation: 167W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
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IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Power dissipation: 136W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Power dissipation: 120W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
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IRF7452TRPBF IRF7452TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A37BEC8426F1A303005056AB0C4F&compId=irf7452pbf.pdf?ci_sign=362455816f184008d289cc4fcaf26d956f50d657 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7451PBF IRF7451PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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IRF7451TRPBF IRF7451TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7455TRPBF IRF7455TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A394A8FECCF1A303005056AB0C4F&compId=irf7455pbf.pdf?ci_sign=a8e199bc69b070ff2b01b8bdf83e57d71f58e4bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7457TRPBF IRF7457TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A3D3C6C7FAF1A303005056AB0C4F&compId=irf7457pbf.pdf?ci_sign=f53326c1a66ccc11f63b761dfae3d8bee0ae43f5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPD50R380CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 14.1A; 98W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 14.1A
Power dissipation: 98W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
2500+30.78 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLD1314ELXUMA1 TLD1314ELXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C10BB88A6898BF&compId=TLD1314EL.pdf?ci_sign=f5a79c5c9d23cf4197f383c96b3d26c6cde43150 Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
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IPB107N20NAATMA1 IPB107N20NAATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBCC450370611C&compId=IPB107N20NA-DTE.pdf?ci_sign=95e67b89e8669e5b30bbb7d2de564a5b3a2d6af1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 820 шт:
термін постачання 21-30 дні (днів)
1+462.12 грн
5+413.28 грн
25+401.40 грн
В кошику  од. на суму  грн.
IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
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IPP052NE7N3GXKSA1 IPP052NE7N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9620822B1011C&compId=IPP052NE7N3G-DTE.pdf?ci_sign=468892a790d343bbb195f2418fb4605339d9ca3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
4+109.13 грн
5+96.59 грн
10+84.71 грн
14+69.67 грн
37+65.71 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRL7472L1TRPbF INFINEON TECHNOLOGIES Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 68A
Case: DirectFET-L8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BSZ160N10NS3GATMA1 BSZ160N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4C62B0C9011C&compId=BSZ160N10NS3G-DTE.pdf?ci_sign=2e6ee9257ae56d215ef4850cabfc0283f7a1cc95 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IAUC60N10S5L110ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N10S5L110-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b9370c4677 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 88W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IAUS260N10S5N019TATMA1 INFINEON TECHNOLOGIES Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 91A
Pulsed drain current: 995A
Power dissipation: 300W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 166nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPD60N10S412ATMA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 60A; 94W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Application: automotive industry
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+48.34 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPB020N10N5ATMA1 IPB020N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB020N10N5LF IPB020N10N5LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB100N10S305ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
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IAUC100N10S5L040ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IAUC100N10S5L054ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IAUC100N10S5N040ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BFR193FH6327XTSA1 INFINEON TECHNOLOGIES bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT723
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
на замовлення 42000 шт:
термін постачання 21-30 дні (днів)
3000+6.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSC040N08NS5ATMA1 BSC040N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E5BB2ADA011C&compId=BSC040N08NS5-DTE.pdf?ci_sign=b51bf54e85ec6f47698e8c2b8ec68aa60b2aa641 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IAUC40N08S5L140ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 160A; 56W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 56W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IAUS240N08S5N019ATMA1 INFINEON TECHNOLOGIES IAUS240N08S5N019.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IPB040N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB040N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc00361b15 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 107A; 150W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 80V
Drain current: 107A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
800+88.67 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BTS5090-1EJA BTS5090-1EJA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869871C1DD99A469&compId=BTS5090-1EJA.pdf?ci_sign=af1f6a10ac5d51a8222a21f88fb9386d216a8cca Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Supply voltage: 13.5V DC
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 90mΩ
Number of channels: 1
Output current: 3A
Mounting: SMD
Case: DSO8
Kind of integrated circuit: high-side
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)
3+177.34 грн
10+106.88 грн
15+65.71 грн
39+61.75 грн
1000+60.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS72002EPCXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D8F4E5FCD218BF&compId=BTS72002EPC.pdf?ci_sign=650657063cacfe9a7b8754ecbde50773a4a12541
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Turn-on time: 170µs
Turn-off time: 0.15ms
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E418FECF9E11C&compId=BSZ100N06NS-DTE.pdf?ci_sign=2c2fadeec5f1af9aa66da941965b2afe221347ae
BSZ100N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2CAECCFE3B1BF&compId=IPA65R190E6-DTE.pdf?ci_sign=021fbd4cdff9db126bcf3787abcc493e074c7a0c
IPA65R190E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 650V
Kind of package: tube
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+249.82 грн
7+153.59 грн
17+145.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BAT6405E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6405E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Case: SOT23
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
на замовлення 1521 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
53+8.08 грн
65+6.18 грн
69+5.78 грн
80+4.96 грн
100+4.58 грн
265+3.51 грн
729+3.32 грн
Мінімальне замовлення: 53
В кошику  од. на суму  грн.
BAT6406E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6406E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
на замовлення 5779 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.94 грн
52+7.76 грн
57+7.05 грн
100+5.04 грн
259+3.59 грн
712+3.40 грн
1000+3.38 грн
3000+3.27 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BAT64E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT64E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: single diode
на замовлення 2425 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+19.61 грн
35+11.48 грн
46+8.65 грн
58+6.92 грн
100+5.60 грн
291+3.20 грн
799+3.02 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
IRFB7534PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d
IRFB7534PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 186nC
Trade name: StrongIRFET
на замовлення 926 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+148.36 грн
10+117.17 грн
12+79.96 грн
33+75.21 грн
100+74.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB7734PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5DC2D657A469&compId=IRFB7734PBF.pdf?ci_sign=bc7cc28ffb0486c427e821c8b7317f1232fe5615
IRFB7734PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BCR420U pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61691658B15EA&compId=BCR420U.pdf?ci_sign=0ca17a34f60a3e7fc7f59a90f29534577755f717
BCR420U
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+18.59 грн
30+15.04 грн
75+13.06 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BCR421UE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD618EC6C8DF5EA&compId=BCR421UE6327.pdf?ci_sign=dca36e6257f451c4dcb566801e7a45f24426b061
BCR421UE6327
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming; PWM
на замовлення 1184 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+59.68 грн
17+23.43 грн
25+20.27 грн
100+19.00 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BCR420UE6327HTSA1 Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
BCR420UE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Integrated circuit features: linear dimming
Topology: single transistor
Type of integrated circuit: driver
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Operating voltage: 1.4...40V DC
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.99 грн
18+22.17 грн
21+19.56 грн
25+16.78 грн
72+12.98 грн
198+12.27 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BCR420UE6433HTMA1 Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming
товару немає в наявності
В кошику  од. на суму  грн.
BCR421UE6327HTSA1 Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming; PWM
товару немає в наявності
В кошику  од. на суму  грн.
SAK-TC1797-384F150E pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B44B48D9EF6469&compId=SAK-TC1797-384F150E.pdf?ci_sign=23a456cb26f03936757134008688725281715175
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Mounting: SMD
Interface: I2C; SPI; UART
Supply voltage: 3.5...5V DC
Memory: 3MB FLASH
Case: BGA416
Type of integrated circuit: microcontroller
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3DAAD43E211C&compId=BSZ100N06LS3G-DTE.pdf?ci_sign=4f5c55c03ed9fd06aee860c65e9b034596f8d145
BSZ100N06LS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
IPP100N06S2L05AKSA2 Infineon-IPP_B100N06S2L_05-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4322a685747&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+199.51 грн
200+166.26 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSC098N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3879884FEB9E11C&compId=BSC098N10NS5-DTE.pdf?ci_sign=31742ccebec498427e0db6b79cb1135e09669434
BSC098N10NS5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
на замовлення 214 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+259.68 грн
6+183.68 грн
14+174.18 грн
30+170.22 грн
60+167.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R280CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA746BF105C74A&compId=IPD60R280CFD7.pdf?ci_sign=eee2466600e65dfdc3beed43fe5dc29972e84cf0
IPD60R280CFD7
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 18nC
On-state resistance: 0.536Ω
Drain current: 6A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IDD06SG60C pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB82C54BF690FA8&compId=IDD06SG60C-DTE.pdf?ci_sign=851c90a389fd4d372f0c67b2bf7e56c16a8d899f
IDD06SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 6A; 71W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO252-3
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward voltage: 2.1V
Max. forward impulse current: 23A
Power dissipation: 71W
Technology: CoolSiC™ 3G; SiC
товару немає в наявності
В кошику  од. на суму  грн.
IDD05SG60C pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB822D8248D0FA8&compId=IDD05SG60C-DTE.pdf?ci_sign=837a226ff9e89a535c9c73fce29d66dc2f7d17a4
IDD05SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 5A; 56W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: PG-TO252-3
Kind of package: reel; tape
Max. forward voltage: 2.1V
Max. forward impulse current: 18A
Power dissipation: 56W
Technology: CoolSiC™ 3G; SiC
Leakage current: 0.4µA
товару немає в наявності
В кошику  од. на суму  грн.
BTS3205NHUSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4F8FB81166745&compId=BTS3205N.pdf?ci_sign=05ecda57c6e83a44cef7414def4b21c318e9e498
BTS3205NHUSA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 600mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Technology: HITFET®
Output voltage: 42V
Output current: 0.6A
Mounting: SMD
Case: SOT223-4
Kind of output: N-Channel
Kind of integrated circuit: low-side
товару немає в наявності
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BCV49H6327XTSA1 BCV29_49.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BCV49H6327XTSA1
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+10.91 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BSP50H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586991C042987A469&compId=BSP50H6327XTSA1.pdf?ci_sign=542758f57bfb5844573fe09b784a03254dfb5c91
BSP50H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
товару немає в наявності
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BTS5210L pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987AF60A62E469&compId=BTS5210L.pdf?ci_sign=1643026f07659dfa42b5687377d90babcf2df106
BTS5210L
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 1.8A
On-state resistance: 0.11Ω
Number of channels: 2
Supply voltage: 5.5...40V DC
Kind of integrated circuit: high-side
Case: BSOP12
Technology: Classic PROFET
на замовлення 549 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+321.44 грн
6+167.05 грн
16+157.55 грн
250+151.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP042N03LGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60A532413011C&compId=IPP042N03LG-DTE.pdf?ci_sign=120b1ad691b43ca00d9d29c84f30c36acf957b5b
IPP042N03LGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+81.00 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2ED2184S06FXUMA1 Infineon-2ED2184-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d76cf229fb
2ED2184S06FXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
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1EDC60I12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC60I12AHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
на замовлення 603 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+183.31 грн
5+160.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1EDC30I12MHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c
1EDC30I12MHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -3...3A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 998 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+219.12 грн
7+154.38 грн
17+145.68 грн
50+140.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1EDI05I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI05I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Number of channels: 1
Voltage class: 1.2kV
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 2096 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+116.81 грн
10+96.59 грн
13+76.80 грн
34+72.84 грн
250+70.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Power dissipation: 167W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Power dissipation: 136W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
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IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Power dissipation: 120W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
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IRF7452TRPBF pVersion=0046&contRep=ZT&docId=E221A37BEC8426F1A303005056AB0C4F&compId=irf7452pbf.pdf?ci_sign=362455816f184008d289cc4fcaf26d956f50d657
IRF7452TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
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IRF7451PBF pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a
IRF7451PBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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IRF7451TRPBF pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a
IRF7451TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
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IRF7455TRPBF pVersion=0046&contRep=ZT&docId=E221A394A8FECCF1A303005056AB0C4F&compId=irf7455pbf.pdf?ci_sign=a8e199bc69b070ff2b01b8bdf83e57d71f58e4bc
IRF7455TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7457TRPBF pVersion=0046&contRep=ZT&docId=E221A3D3C6C7FAF1A303005056AB0C4F&compId=irf7457pbf.pdf?ci_sign=f53326c1a66ccc11f63b761dfae3d8bee0ae43f5
IRF7457TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPD50R380CEAUMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 14.1A; 98W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 14.1A
Power dissipation: 98W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+30.78 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLD1314ELXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C10BB88A6898BF&compId=TLD1314EL.pdf?ci_sign=f5a79c5c9d23cf4197f383c96b3d26c6cde43150
TLD1314ELXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
товару немає в наявності
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IPB107N20NAATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBCC450370611C&compId=IPB107N20NA-DTE.pdf?ci_sign=95e67b89e8669e5b30bbb7d2de564a5b3a2d6af1
IPB107N20NAATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 820 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+462.12 грн
5+413.28 грн
25+401.40 грн
В кошику  од. на суму  грн.
IPB107N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488
IPB107N20N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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IPP052NE7N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9620822B1011C&compId=IPP052NE7N3G-DTE.pdf?ci_sign=468892a790d343bbb195f2418fb4605339d9ca3c
IPP052NE7N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+109.13 грн
5+96.59 грн
10+84.71 грн
14+69.67 грн
37+65.71 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRL7472L1TRPbF Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 68A
Case: DirectFET-L8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BSZ160N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4C62B0C9011C&compId=BSZ160N10NS3G-DTE.pdf?ci_sign=2e6ee9257ae56d215ef4850cabfc0283f7a1cc95
BSZ160N10NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
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IAUC60N10S5L110ATMA1 Infineon-IAUC60N10S5L110-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b9370c4677
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 88W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IAUS260N10S5N019TATMA1 Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 91A
Pulsed drain current: 995A
Power dissipation: 300W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 166nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPD60N10S412ATMA1 fundamentals-of-power-semiconductors
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 60A; 94W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Application: automotive industry
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+48.34 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPB020N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a
IPB020N10N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IPB020N10N5LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8
IPB020N10N5LF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
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IPB100N10S305ATMA1 Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
товару немає в наявності
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IAUC100N10S5L040ATMA1 Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IAUC100N10S5L054ATMA1 Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IAUC100N10S5N040ATMA1 Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
BFR193FH6327XTSA1 bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT723
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
на замовлення 42000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+6.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSC040N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E5BB2ADA011C&compId=BSC040N08NS5-DTE.pdf?ci_sign=b51bf54e85ec6f47698e8c2b8ec68aa60b2aa641
BSC040N08NS5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IAUC40N08S5L140ATMA1 Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 160A; 56W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 56W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IAUS240N08S5N019ATMA1 IAUS240N08S5N019.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IPB040N08NF2SATMA1 Infineon-IPB040N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc00361b15
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 107A; 150W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 80V
Drain current: 107A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
800+88.67 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BTS5090-1EJA pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869871C1DD99A469&compId=BTS5090-1EJA.pdf?ci_sign=af1f6a10ac5d51a8222a21f88fb9386d216a8cca
BTS5090-1EJA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Supply voltage: 13.5V DC
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 90mΩ
Number of channels: 1
Output current: 3A
Mounting: SMD
Case: DSO8
Kind of integrated circuit: high-side
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+177.34 грн
10+106.88 грн
15+65.71 грн
39+61.75 грн
1000+60.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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