Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149636) > Сторінка 2476 з 2494
| Фото | Назва | Виробник | Інформація |
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| BSZ075N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CY8C4013SXI-411T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 16MHz; SOIC16 Type of integrated circuit: PSoC microcontroller Clock frequency: 16MHz Mounting: SMD Number of inputs/outputs: 12 Case: SOIC16 Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); internal clock oscillator; PoR; PWM Operating temperature: -40...85°C |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IPD95R450P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD Case: DPAK Mounting: SMD Kind of package: reel Technology: CoolMOS™ P7 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 35nC On-state resistance: 0.45Ω Drain current: 8.6A Power dissipation: 104W Gate-source voltage: ±20V Drain-source voltage: 950V |
на замовлення 1463 шт: термін постачання 21-30 дні (днів) |
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AUIRF2804L | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 300W Case: TO262 Mounting: THT Kind of channel: enhancement Gate-source voltage: ±20V Gate charge: 160nC On-state resistance: 2mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSZ150N10LS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8 Case: PG-TSDSON-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 15mΩ Power dissipation: 63W Gate-source voltage: ±20V Drain current: 40A Drain-source voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRF7342QTR | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -3.4A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of channel: enhancement On-state resistance: 0.17Ω Gate charge: 26nC Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAV170E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.2A; 1.5us; SOT23; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 1.5µs Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: fast switching |
на замовлення 5995 шт: термін постачання 21-30 дні (днів) |
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| IRL40SC209 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1600 шт: термін постачання 21-30 дні (днів) |
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EVAL-IMM101T-015TOBO1 (SP004177748) | INFINEON TECHNOLOGIES |
Category: Development kits - othersDescription: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors Components: IMM101T-015M Interface: GPIO; I2C; PWM; UART Kind of connector: screw terminal x2 Application: motors Kit contents: prototype board Type of development kit: evaluation Kind of module: motor driver |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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BSP752R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Output current: 1.3A Mounting: SMD Technology: Classic PROFET Kind of integrated circuit: high-side Kind of output: N-Channel On-state resistance: 0.15Ω Number of channels: 1 Output voltage: 52V Case: SO8 Type of integrated circuit: power switch |
на замовлення 2460 шт: термін постачання 21-30 дні (днів) |
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ICE5AR0680BZSXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 5.8A; 100kHz; Ch: 1; DIP7; flyback; 0÷80% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 5.8A Frequency: 0.1MHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...140°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 800V Duty cycle factor: 0...80% Power: 66/39/41W Application: SMPS Operating voltage: 10...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ICE3BR4765JFKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| IPD020N03LF2SATMA1 | INFINEON TECHNOLOGIES |
Category: Transistors - UnclassifiedDescription: IPD020N03LF2SATMA1 |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| IPP020N03LF2SAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| ICE3BS03LJGXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 30495 шт: термін постачання 21-30 дні (днів) |
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IPW60R045CPFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 431W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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| IPD130N10NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| ISC030N10NM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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IRLL2705TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 3.8A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 1056 шт: термін постачання 21-30 дні (днів) |
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IRLL2703TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 45mΩ Power dissipation: 1W Drain current: 3.1A Pulsed drain current: 16A Gate-source voltage: ±16V Drain-source voltage: 30V Technology: HEXFET® Case: SOT223 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BSC065N06LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; N; 60V; 64A; 46W; PG-TDSON-8; SMT Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 60V Drain current: 64A Case: PG-TDSON-8 Gate-source voltage: 20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Electrical mounting: SMT Power dissipation: 46W |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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| BSZ084N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8 Case: PG-TSDSON-8 Kind of channel: enhancement Technology: OptiMOS™ 5 Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 8.4mΩ Power dissipation: 63W Drain current: 40A Gate-source voltage: ±20V Drain-source voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRFR3410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IRFR3410TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPD80R900P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD Mounting: SMD Polarisation: unipolar Gate charge: 15nC On-state resistance: 0.9Ω Drain current: 3.9A Power dissipation: 45W Gate-source voltage: ±20V Drain-source voltage: 800V Technology: CoolMOS™ P7 Kind of channel: enhancement Version: ESD Case: PG-TO252-3 Type of transistor: N-MOSFET |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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IPP60R099P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ICL8001GXUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; flyback; PFC controller,SMPS controller,LED driver Mounting: SMD Type of integrated circuit: driver Topology: flyback Case: PG-DSO-8 Integrated circuit features: phase-cut dimming; soft-start function Number of channels: 1 Operating voltage: 10.5...26V DC Kind of integrated circuit: LED driver; PFC controller; SMPS controller |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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| BGS12SN6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switchesDescription: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz Supply voltage: 1.8...3.5V DC Mounting: SMD Output configuration: SPDT Number of channels: 2 Bandwidth: 0.1...6GHz Application: telecommunication Case: TSNP6 Type of integrated circuit: RF switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRG4IBC10UDPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 3.9A Power dissipation: 25W Case: TO220AB Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4IBC30WPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 17A; 45W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 17A Power dissipation: 45W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4PSH71KDPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 78A Power dissipation: 350W Case: SUPER247 Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4RC10KDTRPBF | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 9A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 9A Power dissipation: 38W Case: DPAK Mounting: SMD Features of semiconductor devices: integrated anti-parallel diode Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4RC10UDPBF | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 8.5A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8.5A Power dissipation: 38W Case: DPAK Mounting: SMD Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4502F100K768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...125°C Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Memory: 160kB SRAM; 768kB FLASH Kind of core: 32-bit Case: PG-LQFP-100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4500F100F768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...85°C Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Memory: 160kB SRAM; 768kB FLASH Kind of core: 32-bit Case: PG-LQFP-100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4500F100K768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...125°C Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Memory: 160kB SRAM; 768kB FLASH Kind of core: 32-bit Case: PG-LQFP-100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4500F144K768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...125°C Supply voltage: 3.3V DC Number of A/D channels: 26 Number of 16bit timers: 26 Number of inputs/outputs: 91 Memory: 160kB SRAM; 768kB FLASH Kind of core: 32-bit Case: PG-LQFP-144 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4502F100F768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...85°C Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Memory: 160kB SRAM; 768kB FLASH Kind of core: 32-bit Case: PG-LQFP-100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FL128SAGNFV001 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 133MHz Kind of package: tube |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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| FP10R12W1T7B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Technology: EasyPIM™ 1B Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 10A Pulsed collector current: 20A Gate-emitter voltage: ±20V Case: AG-EASY1B-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SPD15P10PLGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Kind of channel: enhancement On-state resistance: 0.2Ω Gate-source voltage: ±20V Power dissipation: 128W |
на замовлення 2152 шт: термін постачання 21-30 дні (днів) |
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IPD60R600P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 Mounting: SMD Polarisation: unipolar Gate charge: 9nC On-state resistance: 0.6Ω Drain current: 4A Power dissipation: 30W Pulsed drain current: 16A Gate-source voltage: ±20V Drain-source voltage: 600V Technology: CoolMOS™ P7 Kind of channel: enhancement Version: ESD Case: PG-TO252-3 Type of transistor: N-MOSFET |
на замовлення 2211 шт: термін постачання 21-30 дні (днів) |
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IPD60R280P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 53W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 18nC Kind of channel: enhancement Version: ESD |
на замовлення 1887 шт: термін постачання 21-30 дні (днів) |
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| IRFS4410ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK On-state resistance: 9mΩ Gate-source voltage: ±20V Drain current: 69A Power dissipation: 230W Drain-source voltage: 100V Pulsed drain current: 390A Type of transistor: N-MOSFET Mounting: SMD Technology: HEXFET® Kind of channel: enhancement Polarisation: unipolar Case: D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF7495TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.3A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IPD50N04S408ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 47A Pulsed drain current: 200A Power dissipation: 46W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -T2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPG20N04S408ATMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 65W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IRLS3036TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 380W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IRF8010STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 260W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IAUA200N04S5N010AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 200A Pulsed drain current: 800A Power dissipation: 167W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 132nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25FL512SAGBHA213 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25FL512SAGBHAC10 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25FL512SAGBHB210 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25FL512SAGBHB213 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25FL512SAGBHBA10 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25FL512SAGBHBA13 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Operating temperature: -40...105°C Kind of interface: serial Mounting: SMD Operating voltage: 2.7...3.6V Operating frequency: 133MHz Application: automotive Memory: 512Mb FLASH Case: BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Interface: QUAD SPI Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25FL512SAGBHI210 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25FL512SAGBHI213 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25FL512SAGBHI310 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. |
| BSZ075N08NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4013SXI-411T |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SOIC16
Type of integrated circuit: PSoC microcontroller
Clock frequency: 16MHz
Mounting: SMD
Number of inputs/outputs: 12
Case: SOIC16
Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); internal clock oscillator; PoR; PWM
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SOIC16
Type of integrated circuit: PSoC microcontroller
Clock frequency: 16MHz
Mounting: SMD
Number of inputs/outputs: 12
Case: SOIC16
Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); internal clock oscillator; PoR; PWM
Operating temperature: -40...85°C
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 68.00 грн |
| IPD95R450P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 0.45Ω
Drain current: 8.6A
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 950V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 0.45Ω
Drain current: 8.6A
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 950V
на замовлення 1463 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 172.15 грн |
| 5+ | 138.27 грн |
| 8+ | 121.49 грн |
| 22+ | 115.10 грн |
| 25+ | 110.30 грн |
| AUIRF2804L |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
товару немає в наявності
В кошику
од. на суму грн.
| BSZ150N10LS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 15mΩ
Power dissipation: 63W
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 15mΩ
Power dissipation: 63W
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 100V
товару немає в наявності
В кошику
од. на суму грн.
| AUIRF7342QTR |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.17Ω
Gate charge: 26nC
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.17Ω
Gate charge: 26nC
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| BAV170E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; SOT23; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; SOT23; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 5995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.05 грн |
| 48+ | 8.39 грн |
| 71+ | 5.66 грн |
| 100+ | 4.78 грн |
| 500+ | 3.38 грн |
| 1000+ | 2.98 грн |
| 3000+ | 2.71 грн |
| IRL40SC209 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 152.35 грн |
| EVAL-IMM101T-015TOBO1 (SP004177748) |
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Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Components: IMM101T-015M
Interface: GPIO; I2C; PWM; UART
Kind of connector: screw terminal x2
Application: motors
Kit contents: prototype board
Type of development kit: evaluation
Kind of module: motor driver
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Components: IMM101T-015M
Interface: GPIO; I2C; PWM; UART
Kind of connector: screw terminal x2
Application: motors
Kit contents: prototype board
Type of development kit: evaluation
Kind of module: motor driver
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4200.49 грн |
| BSP752R |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Output current: 1.3A
Mounting: SMD
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
On-state resistance: 0.15Ω
Number of channels: 1
Output voltage: 52V
Case: SO8
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Output current: 1.3A
Mounting: SMD
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
On-state resistance: 0.15Ω
Number of channels: 1
Output voltage: 52V
Case: SO8
Type of integrated circuit: power switch
на замовлення 2460 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 215.19 грн |
| 10+ | 131.88 грн |
| 25+ | 119.89 грн |
| 100+ | 102.31 грн |
| 250+ | 91.92 грн |
| 500+ | 84.72 грн |
| ICE5AR0680BZSXKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 5.8A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 66/39/41W
Application: SMPS
Operating voltage: 10...25.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 5.8A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 66/39/41W
Application: SMPS
Operating voltage: 10...25.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| ICE3BR4765JFKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 98.99 грн |
| IPD020N03LF2SATMA1 |
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на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 39.25 грн |
| IPP020N03LF2SAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 59.39 грн |
| ICE3BS03LJGXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 30495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 48.63 грн |
| IPW60R045CPFKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1407.34 грн |
| IPD130N10NF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 31.93 грн |
| ISC030N10NM6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 153.21 грн |
| IRLL2705TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1056 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.28 грн |
| 11+ | 39.48 грн |
| 50+ | 29.81 грн |
| 100+ | 26.62 грн |
| 200+ | 23.74 грн |
| 500+ | 23.02 грн |
| IRLL2703TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 45mΩ
Power dissipation: 1W
Drain current: 3.1A
Pulsed drain current: 16A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Technology: HEXFET®
Case: SOT223
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 45mΩ
Power dissipation: 1W
Drain current: 3.1A
Pulsed drain current: 16A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Technology: HEXFET®
Case: SOT223
Kind of channel: enhancement
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| BSC065N06LS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 64A; 46W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 64A
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
Power dissipation: 46W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 64A; 46W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 64A
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
Power dissipation: 46W
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 34.60 грн |
| BSZ084N08NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.4mΩ
Power dissipation: 63W
Drain current: 40A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.4mΩ
Power dissipation: 63W
Drain current: 40A
Gate-source voltage: ±20V
Drain-source voltage: 80V
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| IRFR3410TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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| IRFR3410TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| IPD80R900P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 45W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-TO252-3
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 45W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-TO252-3
Type of transistor: N-MOSFET
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 106.73 грн |
| 10+ | 64.98 грн |
| 25+ | 56.75 грн |
| 100+ | 46.04 грн |
| 500+ | 39.88 грн |
| IPP60R099P6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| ICL8001GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Type of integrated circuit: driver
Topology: flyback
Case: PG-DSO-8
Integrated circuit features: phase-cut dimming; soft-start function
Number of channels: 1
Operating voltage: 10.5...26V DC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Type of integrated circuit: driver
Topology: flyback
Case: PG-DSO-8
Integrated circuit features: phase-cut dimming; soft-start function
Number of channels: 1
Operating voltage: 10.5...26V DC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
на замовлення 117 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.91 грн |
| 7+ | 66.34 грн |
| 25+ | 59.95 грн |
| 100+ | 58.35 грн |
| BGS12SN6E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Output configuration: SPDT
Number of channels: 2
Bandwidth: 0.1...6GHz
Application: telecommunication
Case: TSNP6
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Output configuration: SPDT
Number of channels: 2
Bandwidth: 0.1...6GHz
Application: telecommunication
Case: TSNP6
Type of integrated circuit: RF switch
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| IRG4IBC10UDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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| IRG4IBC30WPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
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| IRG4PSH71KDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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| IRG4RC10KDTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
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| IRG4RC10UDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
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| XMC4502F100K768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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| XMC4500F100F768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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| XMC4500F100K768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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| XMC4500F144K768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
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| XMC4502F100F768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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| S25FL128SAGNFV001 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: tube
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.66 грн |
| 10+ | 134.28 грн |
| FP10R12W1T7B11BOMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Case: AG-EASY1B-2
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Case: AG-EASY1B-2
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| SPD15P10PLGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Kind of channel: enhancement
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Kind of channel: enhancement
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
на замовлення 2152 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.10 грн |
| 10+ | 77.53 грн |
| 25+ | 72.73 грн |
| IPD60R600P7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Power dissipation: 30W
Pulsed drain current: 16A
Gate-source voltage: ±20V
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-TO252-3
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Power dissipation: 30W
Pulsed drain current: 16A
Gate-source voltage: ±20V
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-TO252-3
Type of transistor: N-MOSFET
на замовлення 2211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.81 грн |
| 11+ | 39.80 грн |
| 25+ | 34.37 грн |
| 50+ | 30.69 грн |
| 100+ | 27.26 грн |
| 500+ | 23.26 грн |
| IPD60R280P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
на замовлення 1887 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 134.28 грн |
| 10+ | 79.13 грн |
| 50+ | 74.33 грн |
| IRFS4410ZTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain current: 69A
Power dissipation: 230W
Drain-source voltage: 100V
Pulsed drain current: 390A
Type of transistor: N-MOSFET
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain current: 69A
Power dissipation: 230W
Drain-source voltage: 100V
Pulsed drain current: 390A
Type of transistor: N-MOSFET
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: D2PAK
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| IRF7495TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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| IPD50N04S408ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
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| IPG20N04S408ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
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| IRLS3036TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| IRF8010STRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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| IAUA200N04S5N010AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| S70FL01GSAGMFA010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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| S25FL512SAGBHA213 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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| S25FL512SAGBHAC10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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| S25FL512SAGBHB210 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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| S25FL512SAGBHB213 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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| S25FL512SAGBHBA10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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| S25FL512SAGBHBA13 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Application: automotive
Memory: 512Mb FLASH
Case: BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Interface: QUAD SPI
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Application: automotive
Memory: 512Mb FLASH
Case: BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Interface: QUAD SPI
Kind of package: reel; tape
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| S25FL512SAGBHI210 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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| S25FL512SAGBHI213 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| S25FL512SAGBHI310 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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