Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148587) > Сторінка 2476 з 2477

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IPI60R280C6XKSA1 IPI60R280C6XKSA1 INFINEON TECHNOLOGIES IPI60R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
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IPP60R280P7 IPP60R280P7 INFINEON TECHNOLOGIES IPP60R280P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IPW60R280P6FKSA1 IPW60R280P6FKSA1 INFINEON TECHNOLOGIES IPW60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPAN60R280PFD7SXKSA1 IPAN60R280PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
Version: ESD
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IR2130STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+141.95 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IR2132JTRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
500+341.67 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
IRS2001STRPBF INFINEON TECHNOLOGIES irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+52.82 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRGP4062DPBF IRGP4062DPBF INFINEON TECHNOLOGIES irgb4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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IDP40E65D2XKSA1 IDP40E65D2XKSA1 INFINEON TECHNOLOGIES IDP40E65D2XKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
на замовлення 152 шт:
термін постачання 21-30 дні (днів)
3+148.55 грн
9+105.75 грн
24+100.39 грн
50+99.62 грн
100+95.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDV08E65D2XKSA1 IDV08E65D2XKSA1 INFINEON TECHNOLOGIES IDV08E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; tube; TO220FP-2
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
7+65.20 грн
8+53.64 грн
20+46.36 грн
54+43.83 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IDP18E120XKSA1 IDP18E120XKSA1 INFINEON TECHNOLOGIES IDP18E120XKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
на замовлення 731 шт:
термін постачання 21-30 дні (днів)
3+147.73 грн
4+121.85 грн
9+105.75 грн
24+99.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S25FL128SAGBHBA00 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL128SAGBHBA03 INFINEON TECHNOLOGIES Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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S25FL128SAGBHBB03 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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S25FL128SAGBHI203 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGBHI210 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGBHI300 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGBHI303 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGBHIA03 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGBHIA10 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGBHIA13 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGBHIZ00 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGBHM200 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL128SAGBHM203 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL128SAGBHV200 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL128SAGBHVA00 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL128SAGBHVA03 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S25FL128SAGBHVB00 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL128SAGMFB000 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL128SAGMFB003 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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S25FL128SAGMFBG00 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL128SAGMFBR00 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL128SAGMFBR03 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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S25FL128SAGMFI003 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGMFI010 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGMFI013 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGMFIG00 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGMFIG03 INFINEON TECHNOLOGIES S25FL128S_256S_00.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGMFIG11 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
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BTS70061EPPXUMA1 INFINEON TECHNOLOGIES BTS70061EPP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 12.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 12.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 6.6mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
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IPW60R045P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b490710f4aba Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
30+361.47 грн
90+301.94 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPB029N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB029N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67ca353b2d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
800+68.50 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BSZ086P03NS3EGATMA BSZ086P03NS3EGATMA INFINEON TECHNOLOGIES BSZ086P03NS3EGATMA-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 69W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
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BSZ088N03MSGATMA1 BSZ088N03MSGATMA1 INFINEON TECHNOLOGIES BSZ088N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
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BSZ084N08NS5ATMA1 INFINEON TECHNOLOGIES BSZ084N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 63W
Polarisation: unipolar
Drain-source voltage: 80V
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1 INFINEON TECHNOLOGIES BSZ086P03NS3GATMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 52W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
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BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 INFINEON TECHNOLOGIES BSZ088N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
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BSC022N04LS6ATMA1 INFINEON TECHNOLOGIES BSC022N04LS6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Kind of package: reel; tape
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BSC022N04LSATMA1 BSC022N04LSATMA1 INFINEON TECHNOLOGIES BSC022N04LS-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
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AIHD04N60RATMA1 AIHD04N60RATMA1 INFINEON TECHNOLOGIES AIHD04N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
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AIHD04N60RFATMA1 AIHD04N60RFATMA1 INFINEON TECHNOLOGIES AIHD04N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 19ns
Turn-off time: 153ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
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CY7C1011DV33-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1011G30-12ZSXE INFINEON TECHNOLOGIES Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: in-tray
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CY7C1011G30-12ZSXET INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: reel; tape
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CY7C1019DV33-10BVXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: in-tray
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CY7C1019DV33-10VXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Case: SOJ32
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1020D-10ZSXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1020D-10ZSXIT INFINEON TECHNOLOGIES ?docID=49324 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1020DV33-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1020DV33_512_K_(32_K_x_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2f5bf37f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1021D-10VXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
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IPI60R280C6XKSA1 IPI60R280C6-DTE.pdf
IPI60R280C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
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IPP60R280P7 IPP60R280P7.pdf
IPP60R280P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IPW60R280P6FKSA1 IPW60R280P6-DTE.pdf
IPW60R280P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPAN60R280PFD7SXKSA1 Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926
IPAN60R280PFD7SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
Version: ESD
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IR2130STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+141.95 грн
Мінімальне замовлення: 1000
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IR2132JTRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
500+341.67 грн
Мінімальне замовлення: 500
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IRS2001STRPBF irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+52.82 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRGP4062DPBF irgb4062dpbf.pdf
IRGP4062DPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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IDP40E65D2XKSA1 IDP40E65D2XKSA1.pdf
IDP40E65D2XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
на замовлення 152 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+148.55 грн
9+105.75 грн
24+100.39 грн
50+99.62 грн
100+95.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDV08E65D2XKSA1 IDV08E65D2.pdf
IDV08E65D2XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; tube; TO220FP-2
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.20 грн
8+53.64 грн
20+46.36 грн
54+43.83 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IDP18E120XKSA1 IDP18E120XKSA1.pdf
IDP18E120XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
на замовлення 731 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+147.73 грн
4+121.85 грн
9+105.75 грн
24+99.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S25FL128SAGBHBA00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL128SAGBHBA03 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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S25FL128SAGBHBB03
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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S25FL128SAGBHI203 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGBHI210 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGBHI300 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGBHI303 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGBHIA03 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику  од. на суму  грн.
S25FL128SAGBHIA10 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGBHIA13 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGBHIZ00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGBHM200 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL128SAGBHM203 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL128SAGBHV200 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL128SAGBHVA00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL128SAGBHVA03 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S25FL128SAGBHVB00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL128SAGMFB000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL128SAGMFB003
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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S25FL128SAGMFBG00 download
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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В кошику  од. на суму  грн.
S25FL128SAGMFBR00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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В кошику  од. на суму  грн.
S25FL128SAGMFBR03
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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S25FL128SAGMFI003 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGMFI010 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGMFI013 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGMFIG00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL128SAGMFIG03 S25FL128S_256S_00.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL128SAGMFIG11 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
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BTS70061EPPXUMA1 BTS70061EPP.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 12.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 12.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 6.6mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
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IPW60R045P7XKSA1 Infineon-IPW60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b490710f4aba
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+361.47 грн
90+301.94 грн
Мінімальне замовлення: 30
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IPB029N06NF2SATMA1 Infineon-IPB029N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67ca353b2d
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
800+68.50 грн
Мінімальне замовлення: 800
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BSZ086P03NS3EGATMA BSZ086P03NS3EGATMA-DTE.pdf
BSZ086P03NS3EGATMA
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 69W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
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BSZ088N03MSGATMA1 BSZ088N03MSG-DTE.pdf
BSZ088N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
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BSZ084N08NS5ATMA1 BSZ084N08NS5-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 63W
Polarisation: unipolar
Drain-source voltage: 80V
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1-dte.pdf
BSZ086P03NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 52W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
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BSZ088N03LSGATMA1 BSZ088N03LSG-DTE.pdf
BSZ088N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
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BSC022N04LS6ATMA1 BSC022N04LS6ATMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Kind of package: reel; tape
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BSC022N04LSATMA1 BSC022N04LS-dte.pdf
BSC022N04LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
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AIHD04N60RATMA1 AIHD04N60R.pdf
AIHD04N60RATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
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AIHD04N60RFATMA1 AIHD04N60RF.pdf
AIHD04N60RFATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 19ns
Turn-off time: 153ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
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CY7C1011DV33-10BVXI Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1011G30-12ZSXE Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: in-tray
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CY7C1011G30-12ZSXET download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: reel; tape
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CY7C1019DV33-10BVXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: in-tray
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CY7C1019DV33-10VXIT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Case: SOJ32
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1020D-10ZSXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1020D-10ZSXIT ?docID=49324
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1020DV33-10ZSXI Infineon-CY7C1020DV33_512_K_(32_K_x_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2f5bf37f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1021D-10VXIT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
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