Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149693) > Сторінка 2476 з 2495

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ISP752T ISP752T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A4A77C194469&compId=ISP752T.pdf?ci_sign=32c403eb98204275a7023500201c5de23626c9ff Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
на замовлення 1752 шт:
термін постачання 21-30 дні (днів)
3+174.13 грн
10+90.43 грн
28+85.83 грн
100+82.76 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC0501NSIATMA1 BSC0501NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2F74B50B0811C&compId=BSC0501NSI-DTE.pdf?ci_sign=3e21b3e46ed68d71901e7df3c9e2d2453ebc58d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC0504NSIATMA1 BSC0504NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FB14F6AEA11C&compId=BSC0504NSI-DTE.pdf?ci_sign=d63935e40a03d855fe2b4edfdc5a882564f66b04 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
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DD260N16K DD260N16K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CA08F9313D8469&compId=DD260N18K.pdf?ci_sign=1a3eeda9b19c3aa4315259af2d268dad7a8056c1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Case: BG-PB50-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.32V
Load current: 260A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+12039.24 грн
3+10993.08 грн
В кошику  од. на суму  грн.
IRFL4315TRPBF IRFL4315TRPBF INFINEON TECHNOLOGIES irfl4315pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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TD122N22KOF TD122N22KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E80995079E469&compId=TD122N22KOF.pdf?ci_sign=9c41f21baa72cbf2c5dd63103eb17375e3837443 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
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TLD5097EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
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TLD5098EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811 Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
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IPAN60R210PFD7SXKSA1 IPAN60R210PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R210PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e2254e024673e Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 386mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPD65R190C7ATMA1 IPD65R190C7ATMA1 INFINEON TECHNOLOGIES IPD65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.2A
Drain-source voltage: 650V
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
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BSZ025N04LSATMA1 BSZ025N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF4E393A0611C&compId=BSZ025N04LS-DTE.pdf?ci_sign=c7e189cc621b48c52fd66a8f0c37be3c84d10bf3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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BSZ028N04LSATMA1 BSZ028N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF8A4764E611C&compId=BSZ028N04LS-DTE.pdf?ci_sign=b47980fc1bac52431ab9bce3c8240b67030a1471 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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BSM200GB60DLC BSM200GB60DLC INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E56EC383BCA469&compId=BSM200GB60DLC.pdf?ci_sign=ad8b4e1a387281680046d25354b2887a6f0ae6de Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: AG-34MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 730W
Mechanical mounting: screw
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BSS316NH6327XTSA1 BSS316NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
на замовлення 6553 шт:
термін постачання 21-30 дні (днів)
32+13.20 грн
56+6.90 грн
74+5.20 грн
100+4.57 грн
347+2.61 грн
952+2.47 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
BCR573E6433HTMA1 BCR573E6433HTMA1 INFINEON TECHNOLOGIES bcr573.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a373011440841409030e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 150MHz
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FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2574.89 грн
В кошику  од. на суму  грн.
FS10R12VT3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C676DF9BDB3D7&compId=FS10R12VT3.pdf?ci_sign=23a7050ec5881090dc6b45a7b7948f24badf5c4e Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Electrical mounting: Press-in PCB
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: AG-EASY750-1
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FS75R12W2T4B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS75R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a304320896aa20120b40c2da2770f Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
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BTS5014SDAAUMA1 BTS5014SDAAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986790EA776469&compId=BTS5014SDA.pdf?ci_sign=2df677d362e5c63f61f5d0e01a54278934d5371d Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 14mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
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BTS5016SDA BTS5016SDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 16mΩ
Technology: High Current PROFET
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IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 INFINEON TECHNOLOGIES IKCM10L60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
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IPA60R280P6XKSA1 IPA60R280P6XKSA1 INFINEON TECHNOLOGIES IPA60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+412.64 грн
В кошику  од. на суму  грн.
IPA60R400CEXKSA1 IPA60R400CEXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D5CFAA7B11BF&compId=IPA60R400CE-DTE.pdf?ci_sign=e5e1233d9c0593ec69716be1ffa0f326d68ab466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Drain current: 10.3A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
на замовлення 237 шт:
термін постачання 21-30 дні (днів)
5+85.83 грн
10+79.70 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPA60R099P7 IPA60R099P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1AD96D8E00749&compId=IPA60R099P7.pdf?ci_sign=7eff8bdfbd3710d012680df6a59449a03e6ea114 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Power dissipation: 29W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
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IPA60R199CPXKSA1 IPA60R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B4891FF1D1BF&compId=IPA60R199CP-DTE.pdf?ci_sign=308ea5579321e81455d0dbd6fd33a8b7f65b595d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Power dissipation: 34W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
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IPA60R280P7 IPA60R280P7 INFINEON TECHNOLOGIES IPA60R280P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R280E6XKSA1 IPA60R280E6XKSA1 INFINEON TECHNOLOGIES IPA60R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R099C7XKSA1 IPA60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80EED772EC20C7&compId=IPA60R099C7.pdf?ci_sign=0c95349270cbb480277ccc7e7c7a8b4e2a698a7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Technology: CoolMOS™ C7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 83A
Mounting: THT
Case: TO220FP
Drain-source voltage: 650V
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
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IPA60R125CPXKSA1 IPA60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
1+454.73 грн
3+363.24 грн
4+252.89 грн
10+239.10 грн
В кошику  од. на суму  грн.
IPA60R060P7 IPA60R060P7 INFINEON TECHNOLOGIES IPA60R060P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R125C6XKSA1 IPA60R125C6XKSA1 INFINEON TECHNOLOGIES IPA60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R125P6XKSA1 IPA60R125P6XKSA1 INFINEON TECHNOLOGIES IPA60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R080P7 IPA60R080P7 INFINEON TECHNOLOGIES IPA60R080P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB123N10N3GATMA1 IPB123N10N3GATMA1 INFINEON TECHNOLOGIES IPB123N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES BSS192PH6327FTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 640 шт:
термін постачання 21-30 дні (днів)
11+38.79 грн
16+24.98 грн
50+21.38 грн
70+12.95 грн
192+12.26 грн
Мінімальне замовлення: 11
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IPB60R060P7ATMA1 IPB60R060P7ATMA1 INFINEON TECHNOLOGIES IPB60R060P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
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IPZA60R060P7XKSA1 IPZA60R060P7XKSA1 INFINEON TECHNOLOGIES IPZA60R060P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA911EA046D911CC&compId=BSC030P03NS3GAUMA1-DTE.pdf?ci_sign=c1254b06c5c76b1ff31ae1664f0828f8ca5ba6e1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1585 шт:
термін постачання 21-30 дні (днів)
4+108.11 грн
5+84.30 грн
10+76.63 грн
16+58.24 грн
43+55.18 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EVAL-IMM101T-015TOBO1 (SP004177748)
+1
 		EVAL-IMM101T-015TOBO1 (SP004177748) INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658 Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Application: motors
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-015M
Kind of connector: screw terminal x2
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+4027.39 грн
В кошику  од. на суму  грн.
CY14ME064J2-SXQT INFINEON TECHNOLOGIES Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
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BSC010N04LS6ATMA1 BSC010N04LS6ATMA1 INFINEON TECHNOLOGIES BSC010N04LS6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
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BSC010N04LSATMA1 BSC010N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D674C41301011C&compId=BSC010N04LS-DTE.pdf?ci_sign=d42a193b95255dc1f0aefdcdc81acdbfe54a88bf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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BSC010N04LSIATMA1 BSC010N04LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D67EF5A7A1411C&compId=BSC010N04LSI-DTE.pdf?ci_sign=720cdb79dd60710691892f7034e3197c240f61f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB180N04S4H0ATMA1 IPB180N04S4H0ATMA1 INFINEON TECHNOLOGIES IPB180N04S4H0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
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IAUC80N04S6L032ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC80N04S6L032-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3b4621216 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
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IAUA180N04S5N012AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N04S5N012-DataSheet-v01_10-EN.pdf?fileId=5546d4626bb628d7016bc20182c67740 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPZ60R017C7XKSA1 IPZ60R017C7XKSA1 INFINEON TECHNOLOGIES IPZ60R017C7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4
Mounting: THT
Drain-source voltage: 600V
Drain current: 69A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 240nC
Technology: CoolMOS™ C7
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO247-4
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IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES IPW60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCR555E6327 BCR555E6327 INFINEON TECHNOLOGIES BCR555.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.33W
Frequency: 150MHz
на замовлення 809 шт:
термін постачання 21-30 дні (днів)
50+8.34 грн
100+5.94 грн
200+4.48 грн
549+4.24 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSS131H6327XTSA1 BSS131H6327XTSA1 INFINEON TECHNOLOGIES BSS131H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 13097 шт:
термін постачання 21-30 дні (днів)
23+18.16 грн
32+12.03 грн
41+9.41 грн
50+7.71 грн
100+6.35 грн
224+4.05 грн
614+3.83 грн
Мінімальне замовлення: 23
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IRF8788TRPBF IRF8788TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE9E8C17B9F1A303005056AB0C4F&compId=irf8788pbf.pdf?ci_sign=f0fcf5faf3394f41f78b4d6575d17f702fe54c98 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IDB30E120ATMA1 IDB30E120ATMA1 INFINEON TECHNOLOGIES IDB30E120ATMA1.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Type of diode: rectifying
Case: TO263-3
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
на замовлення 948 шт:
термін постачання 21-30 дні (днів)
4+133.70 грн
10+96.56 грн
13+73.57 грн
34+69.74 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IDB30E60ATMA1 IDB30E60ATMA1 INFINEON TECHNOLOGIES IDB30E60ATMA1.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3
Case: TO263-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
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BSP296L6327 BSP296L6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.1A
On-state resistance: 0.7Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
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BSP296NH6327XTSA1 BSP296NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.2A
On-state resistance: 0.8Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 167 шт:
термін постачання 21-30 дні (днів)
7+60.25 грн
10+40.54 грн
25+32.95 грн
39+23.53 грн
106+22.22 грн
Мінімальне замовлення: 7
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FP20R06W1E3B11BOMA1 FP20R06W1E3B11BOMA1 INFINEON TECHNOLOGIES FP20R06W1E3B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 0.6kV
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IRMCK099M IRMCK099M INFINEON TECHNOLOGIES IRMCK099M.pdf Category: Motor and PWM drivers
Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Case: QFN32
Operating voltage: 3...3.6V DC
Frequency: 1...20kHz
Output current: 73.5mA
Type of integrated circuit: driver
Interface: I2C; JTAG; UART
Clock frequency: 100MHz
Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM
Technology: iMOTION™
Kind of integrated circuit: 3-phase motor controller; DMC
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IGCM10F60GAXKMA1 IGCM10F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 26.1W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: anti-overload OPP; undervoltage UVP
Voltage class: 600V
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+680.86 грн
2+483.56 грн
6+457.50 грн
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IRLL2705TRPBF IRLL2705TRPBF INFINEON TECHNOLOGIES irll2705pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 582 шт:
термін постачання 21-30 дні (днів)
6+70.15 грн
10+44.37 грн
38+24.22 грн
102+22.91 грн
Мінімальне замовлення: 6
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BSC028N06NSATMA1 BSC028N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C290BBFAA9011C&compId=BSC028N06NS-DTE.pdf?ci_sign=9bc8eb8beb6cd7c1675a2c5290d0356c5055d7c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 3432 шт:
термін постачання 21-30 дні (днів)
3+161.76 грн
10+124.15 грн
11+82.00 грн
31+77.40 грн
500+74.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISP752T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A4A77C194469&compId=ISP752T.pdf?ci_sign=32c403eb98204275a7023500201c5de23626c9ff
ISP752T
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
на замовлення 1752 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+174.13 грн
10+90.43 грн
28+85.83 грн
100+82.76 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC0501NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2F74B50B0811C&compId=BSC0501NSI-DTE.pdf?ci_sign=3e21b3e46ed68d71901e7df3c9e2d2453ebc58d4
BSC0501NSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSC0504NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FB14F6AEA11C&compId=BSC0504NSI-DTE.pdf?ci_sign=d63935e40a03d855fe2b4edfdc5a882564f66b04
BSC0504NSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
DD260N16K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CA08F9313D8469&compId=DD260N18K.pdf?ci_sign=1a3eeda9b19c3aa4315259af2d268dad7a8056c1
DD260N16K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Case: BG-PB50-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.32V
Load current: 260A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+12039.24 грн
3+10993.08 грн
В кошику  од. на суму  грн.
IRFL4315TRPBF irfl4315pbf.pdf
IRFL4315TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
В кошику  од. на суму  грн.
TD122N22KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E80995079E469&compId=TD122N22KOF.pdf?ci_sign=9c41f21baa72cbf2c5dd63103eb17375e3837443
TD122N22KOF
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
товару немає в наявності
В кошику  од. на суму  грн.
TLD5097EPXUMA1 Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
TLD5098EPXUMA1 Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
IPAN60R210PFD7SXKSA1 Infineon-IPAN60R210PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e2254e024673e
IPAN60R210PFD7SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 386mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R190C7ATMA1 IPD65R190C7-DTE.pdf
IPD65R190C7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.2A
Drain-source voltage: 650V
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
BSZ025N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF4E393A0611C&compId=BSZ025N04LS-DTE.pdf?ci_sign=c7e189cc621b48c52fd66a8f0c37be3c84d10bf3
BSZ025N04LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BSZ028N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF8A4764E611C&compId=BSZ028N04LS-DTE.pdf?ci_sign=b47980fc1bac52431ab9bce3c8240b67030a1471
BSZ028N04LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BSM200GB60DLC pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E56EC383BCA469&compId=BSM200GB60DLC.pdf?ci_sign=ad8b4e1a387281680046d25354b2887a6f0ae6de
BSM200GB60DLC
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: AG-34MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 730W
Mechanical mounting: screw
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В кошику  од. на суму  грн.
BSS316NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254
BSS316NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
на замовлення 6553 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.20 грн
56+6.90 грн
74+5.20 грн
100+4.57 грн
347+2.61 грн
952+2.47 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
BCR573E6433HTMA1 bcr573.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a373011440841409030e
BCR573E6433HTMA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 150MHz
товару немає в наявності
В кошику  од. на суму  грн.
FP06R12W1T4B3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9
FP06R12W1T4B3BOMA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2574.89 грн
В кошику  од. на суму  грн.
FS10R12VT3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C676DF9BDB3D7&compId=FS10R12VT3.pdf?ci_sign=23a7050ec5881090dc6b45a7b7948f24badf5c4e
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Electrical mounting: Press-in PCB
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: AG-EASY750-1
товару немає в наявності
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FS75R12W2T4B11BOMA1 Infineon-FS75R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a304320896aa20120b40c2da2770f
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
товару немає в наявності
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BTS5014SDAAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986790EA776469&compId=BTS5014SDA.pdf?ci_sign=2df677d362e5c63f61f5d0e01a54278934d5371d
BTS5014SDAAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 14mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
товару немає в наявності
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BTS5016SDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35
BTS5016SDA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 16mΩ
Technology: High Current PROFET
товару немає в наявності
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IKCM10L60GAXKMA1 IKCM10L60GA.pdf
IKCM10L60GAXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
товару немає в наявності
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IPA60R280P6XKSA1 IPA60R280P6-DTE.pdf
IPA60R280P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+412.64 грн
В кошику  од. на суму  грн.
IPA60R400CEXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D5CFAA7B11BF&compId=IPA60R400CE-DTE.pdf?ci_sign=e5e1233d9c0593ec69716be1ffa0f326d68ab466
IPA60R400CEXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Drain current: 10.3A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
на замовлення 237 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+85.83 грн
10+79.70 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPA60R099P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1AD96D8E00749&compId=IPA60R099P7.pdf?ci_sign=7eff8bdfbd3710d012680df6a59449a03e6ea114
IPA60R099P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Power dissipation: 29W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
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IPA60R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B4891FF1D1BF&compId=IPA60R199CP-DTE.pdf?ci_sign=308ea5579321e81455d0dbd6fd33a8b7f65b595d
IPA60R199CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Power dissipation: 34W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
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IPA60R280P7 IPA60R280P7.pdf
IPA60R280P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R280E6XKSA1 IPA60R280E6-DTE.pdf
IPA60R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IPA60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80EED772EC20C7&compId=IPA60R099C7.pdf?ci_sign=0c95349270cbb480277ccc7e7c7a8b4e2a698a7b
IPA60R099C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Technology: CoolMOS™ C7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 83A
Mounting: THT
Case: TO220FP
Drain-source voltage: 650V
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
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IPA60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6
IPA60R125CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+454.73 грн
3+363.24 грн
4+252.89 грн
10+239.10 грн
В кошику  од. на суму  грн.
IPA60R060P7 IPA60R060P7.pdf
IPA60R060P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R125C6XKSA1 IPA60R125C6-DTE.pdf
IPA60R125C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R125P6XKSA1 IPA60R125P6-DTE.pdf
IPA60R125P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R080P7 IPA60R080P7.pdf
IPA60R080P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB123N10N3GATMA1 IPB123N10N3G-DTE.pdf
IPB123N10N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
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BSS192PH6327FTSA1 BSS192PH6327FTSA1-dte.pdf
BSS192PH6327FTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 640 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+38.79 грн
16+24.98 грн
50+21.38 грн
70+12.95 грн
192+12.26 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IPB60R060P7ATMA1 IPB60R060P7.pdf
IPB60R060P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
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IPZA60R060P7XKSA1 IPZA60R060P7.pdf
IPZA60R060P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BSC030P03NS3GAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA911EA046D911CC&compId=BSC030P03NS3GAUMA1-DTE.pdf?ci_sign=c1254b06c5c76b1ff31ae1664f0828f8ca5ba6e1
BSC030P03NS3GAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1585 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+108.11 грн
5+84.30 грн
10+76.63 грн
16+58.24 грн
43+55.18 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EVAL-IMM101T-015TOBO1 (SP004177748) pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658
EVAL-IMM101T-015TOBO1 (SP004177748)
+1
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Application: motors
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-015M
Kind of connector: screw terminal x2
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4027.39 грн
В кошику  од. на суму  грн.
CY14ME064J2-SXQT
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
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BSC010N04LS6ATMA1 BSC010N04LS6ATMA1.pdf
BSC010N04LS6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
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BSC010N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D674C41301011C&compId=BSC010N04LS-DTE.pdf?ci_sign=d42a193b95255dc1f0aefdcdc81acdbfe54a88bf
BSC010N04LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
товару немає в наявності
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BSC010N04LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D67EF5A7A1411C&compId=BSC010N04LSI-DTE.pdf?ci_sign=720cdb79dd60710691892f7034e3197c240f61f0
BSC010N04LSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB180N04S4H0ATMA1 IPB180N04S4H0.pdf
IPB180N04S4H0ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
товару немає в наявності
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IAUC80N04S6L032ATMA1 Infineon-IAUC80N04S6L032-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3b4621216
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
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IAUA180N04S5N012AUMA1 Infineon-IAUA180N04S5N012-DataSheet-v01_10-EN.pdf?fileId=5546d4626bb628d7016bc20182c67740
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPZ60R017C7XKSA1 IPZ60R017C7.pdf
IPZ60R017C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4
Mounting: THT
Drain-source voltage: 600V
Drain current: 69A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 240nC
Technology: CoolMOS™ C7
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO247-4
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IPW60R099P6XKSA1 IPW60R099P6-DTE.pdf
IPW60R099P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCR555E6327 BCR555.pdf
BCR555E6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.33W
Frequency: 150MHz
на замовлення 809 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.34 грн
100+5.94 грн
200+4.48 грн
549+4.24 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSS131H6327XTSA1 BSS131H6327XTSA1.pdf
BSS131H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 13097 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.16 грн
32+12.03 грн
41+9.41 грн
50+7.71 грн
100+6.35 грн
224+4.05 грн
614+3.83 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
IRF8788TRPBF pVersion=0046&contRep=ZT&docId=E221AE9E8C17B9F1A303005056AB0C4F&compId=irf8788pbf.pdf?ci_sign=f0fcf5faf3394f41f78b4d6575d17f702fe54c98
IRF8788TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IDB30E120ATMA1 IDB30E120ATMA1.pdf
IDB30E120ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Type of diode: rectifying
Case: TO263-3
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
на замовлення 948 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+133.70 грн
10+96.56 грн
13+73.57 грн
34+69.74 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IDB30E60ATMA1 IDB30E60ATMA1.pdf
IDB30E60ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3
Case: TO263-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
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BSP296L6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1
BSP296L6327
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.1A
On-state resistance: 0.7Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
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BSP296NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340
BSP296NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.2A
On-state resistance: 0.8Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 167 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+60.25 грн
10+40.54 грн
25+32.95 грн
39+23.53 грн
106+22.22 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FP20R06W1E3B11BOMA1 FP20R06W1E3B11.pdf
FP20R06W1E3B11BOMA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 0.6kV
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IRMCK099M IRMCK099M.pdf
IRMCK099M
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Case: QFN32
Operating voltage: 3...3.6V DC
Frequency: 1...20kHz
Output current: 73.5mA
Type of integrated circuit: driver
Interface: I2C; JTAG; UART
Clock frequency: 100MHz
Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM
Technology: iMOTION™
Kind of integrated circuit: 3-phase motor controller; DMC
товару немає в наявності
В кошику  од. на суму  грн.
IGCM10F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31
IGCM10F60GAXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 26.1W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: anti-overload OPP; undervoltage UVP
Voltage class: 600V
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+680.86 грн
2+483.56 грн
6+457.50 грн
В кошику  од. на суму  грн.
IRLL2705TRPBF irll2705pbf.pdf
IRLL2705TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 582 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+70.15 грн
10+44.37 грн
38+24.22 грн
102+22.91 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSC028N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C290BBFAA9011C&compId=BSC028N06NS-DTE.pdf?ci_sign=9bc8eb8beb6cd7c1675a2c5290d0356c5055d7c0
BSC028N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 3432 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+161.76 грн
10+124.15 грн
11+82.00 грн
31+77.40 грн
500+74.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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