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HYWBSP295H6327XTSA1 INFINEON TECHNOLOGIES Category: Unclassified
Description: HYWBSP295H6327XTSA1
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)
2000+19.66 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
CY62138FLL-45SXI INFINEON TECHNOLOGIES Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
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CY62138FLL-45SXIT INFINEON TECHNOLOGIES Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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CY62158EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62158EV30_MOBL_8_MBIT_(1024K_X_8)_STATIC_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebecb9632aa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: reel; tape
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IPT015N10NF2SATMA1 INFINEON TECHNOLOGIES infineon-ipt015n10nf2s-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 315A; 300W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 315A
Power dissipation: 300W
Case: HSOF-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
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IPP034N08N5AKSA1 IPP034N08N5AKSA1 INFINEON TECHNOLOGIES IPP034N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IGW40T120FKSA1 IGW40T120FKSA1 INFINEON TECHNOLOGIES IGW40T120.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
1+530.09 грн
5+434.41 грн
30+390.64 грн
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BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 INFINEON TECHNOLOGIES BSC047N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BC817K40WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
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IPB073N15N5ATMA1 IPB073N15N5ATMA1 INFINEON TECHNOLOGIES IPB073N15N5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
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BAS28E6327HTSA1 BAS28E6327HTSA1 INFINEON TECHNOLOGIES BAS28E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
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IPP60R099P7 IPP60R099P7 INFINEON TECHNOLOGIES IPP60R099P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
2+333.53 грн
3+278.32 грн
10+263.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ICE1HS01G1XUMA1 ICE1HS01G1XUMA1 INFINEON TECHNOLOGIES ICE1HS01G-1.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 50...609kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: for LCD displays; SMPS
Operating voltage: 10.2...18V DC
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 INFINEON TECHNOLOGIES BC817UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
100+4.45 грн
101+4.10 грн
102+4.08 грн
Мінімальне замовлення: 100
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2EDL23I06PJXUMA1 INFINEON TECHNOLOGIES 2EDL23x06xx.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -2.5...1.8A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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SPP04N80C3 SPP04N80C3 INFINEON TECHNOLOGIES SPP04N80C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 258 шт:
термін постачання 21-30 дні (днів)
4+104.89 грн
10+94.15 грн
50+89.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SPD04N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
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IDW100E60FKSA1 IDW100E60FKSA1 INFINEON TECHNOLOGIES IDW100E60FKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; Ifsm: 400A; TO247-3; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Reverse recovery time: 120ns
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
3+216.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 INFINEON TECHNOLOGIES BSD214SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
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BSB104N08NP3GXUSA1 BSB104N08NP3GXUSA1 INFINEON TECHNOLOGIES BSB104N08NP3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Power dissipation: 48W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES IHW40N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
3+176.74 грн
10+132.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES IGW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Gate-emitter voltage: ±20V
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
2+355.76 грн
10+300.62 грн
Мінімальне замовлення: 2
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IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ40N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
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IKY40N120CH3XKSA1 INFINEON TECHNOLOGIES IKY40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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IKY40N120CS6XKSA1 INFINEON TECHNOLOGIES IKY40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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XMC1404Q048X0200AAXUMA1 XMC1404Q048X0200AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-VQFN-48
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Memory: 16kB SRAM; 200kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404Q064X0064AAXUMA1 XMC1404Q064X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-VQFN-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 64kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404Q048X0064AAXUMA1 XMC1404Q048X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-VQFN-48
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Memory: 16kB SRAM; 64kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404Q064X0128AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-VQFN-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 128kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404F064X0064AAXUMA1 XMC1404F064X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-LQFP-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 64kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404F064X0128AAXUMA1 XMC1404F064X0128AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; CCU8; EEPROM emulation; internal temperature sensor; POSIF; RTC; watchdog
Case: PG-LQFP-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 128kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404F064X0200AAXUMA1 XMC1404F064X0200AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-LQFP-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 200kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404Q064X0200AAXUMA1 XMC1404Q064X0200AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-VQFN-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 200kB FLASH
Interface: CAN x2; GPIO; USIC x4
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BCR198E6327HTSA1 INFINEON TECHNOLOGIES bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
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BCR198WH6327XTSA1 INFINEON TECHNOLOGIES bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 70
Mounting: SMD
Frequency: 190MHz
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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IRFB4228PBF IRFB4228PBF INFINEON TECHNOLOGIES irfb4228pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 135 шт:
термін постачання 21-30 дні (днів)
3+195.67 грн
10+130.49 грн
50+121.40 грн
100+118.10 грн
Мінімальне замовлення: 3
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IRFH5300TRPBF IRFH5300TRPBF INFINEON TECHNOLOGIES irfh5300pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPA60R330P6XKSA1 IPA60R330P6XKSA1 INFINEON TECHNOLOGIES IPA60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.33Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 32W
Drain-source voltage: 600V
Technology: CoolMOS™ P6
Kind of channel: enhancement
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IPP60R330P6XKSA1 IPP60R330P6XKSA1 INFINEON TECHNOLOGIES IPP60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.33Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 93W
Drain-source voltage: 600V
Technology: CoolMOS™ P6
Kind of channel: enhancement
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BSP149H6906XTSA1 BSP149H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depletion
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IRLL014NTRPBF IRLL014NTRPBF INFINEON TECHNOLOGIES irll014npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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PVI1050NSPBF PVI1050NSPBF INFINEON TECHNOLOGIES pvin.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
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IRLB3036PBF IRLB3036PBF INFINEON TECHNOLOGIES irlb3036pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
4+128.08 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BFN26E6327 BFN26E6327 INFINEON TECHNOLOGIES BFN26.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
на замовлення 4549 шт:
термін постачання 21-30 дні (днів)
72+6.23 грн
95+4.38 грн
119+3.49 грн
250+3.27 грн
500+3.20 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES AUIRGx4062D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Technology: Trench
Gate charge: 77nC
Turn-on time: 35ns
Turn-off time: 176ns
Power dissipation: 123W
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Collector-emitter voltage: 600V
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
2+347.76 грн
3+300.62 грн
Мінімальне замовлення: 2
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AUIRGP4062D AUIRGP4062D INFINEON TECHNOLOGIES AUIRGP4062D.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
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IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES irgs4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Power dissipation: 250W
Collector current: 48A
Collector-emitter voltage: 600V
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IRG4PSH71KDPBF IRG4PSH71KDPBF INFINEON TECHNOLOGIES irg4psh71kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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IRG4PSH71UDPBF IRG4PSH71UDPBF INFINEON TECHNOLOGIES irg4psh71udpbf.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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IRG4RC10UDPBF IRG4RC10UDPBF INFINEON TECHNOLOGIES irg4rc10udpbf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
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IRG4PH20KDPBF IRG4PH20KDPBF INFINEON TECHNOLOGIES irg4ph20kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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IRG4IBC10UDPBF IRG4IBC10UDPBF INFINEON TECHNOLOGIES irg4ibc10udpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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IRG4IBC30WPBF IRG4IBC30WPBF INFINEON TECHNOLOGIES irg4ibc30wpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
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IRG4RC10KDTRPBF IRG4RC10KDTRPBF INFINEON TECHNOLOGIES IRG4RC10KDTRPBF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
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AUIRG4PH50S AUIRG4PH50S INFINEON TECHNOLOGIES auirg4ph50s.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
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AUIRG4PC40S-E INFINEON TECHNOLOGIES IRSDS19208-1.pdf?t.download=true&u=5oefqw auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517 Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
на замовлення 39600 шт:
термін постачання 21-30 дні (днів)
400+501.63 грн
Мінімальне замовлення: 400
В кошику  од. на суму  грн.
ICE3BR4765JGXUMA1 ICE3BR4765JGXUMA1 INFINEON TECHNOLOGIES ICE3BR4765JG.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
5+92.50 грн
25+84.24 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ICE3BR4765JFKLA1 INFINEON TECHNOLOGIES Datasheet_ICE3BR4765J_v2_2_10Jun08.pdf?folderId=db3a3043156fd5730115da1adffb1528&fileId=db3a3043156fd5730115da40851e152a Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
50+82.72 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BGS12SN6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856 Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
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HYWBSP295H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: HYWBSP295H6327XTSA1
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+19.66 грн
Мінімальне замовлення: 2000
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CY62138FLL-45SXI Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
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CY62138FLL-45SXIT Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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CY62158EV30LL-45ZSXIT Infineon-CY62158EV30_MOBL_8_MBIT_(1024K_X_8)_STATIC_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebecb9632aa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: reel; tape
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IPT015N10NF2SATMA1 infineon-ipt015n10nf2s-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 315A; 300W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 315A
Power dissipation: 300W
Case: HSOF-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
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IPP034N08N5AKSA1 IPP034N08N5-DTE.pdf
IPP034N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IGW40T120FKSA1 IGW40T120.pdf
IGW40T120FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+530.09 грн
5+434.41 грн
30+390.64 грн
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BSC047N08NS3GATMA1 BSC047N08NS3G-DTE.pdf
BSC047N08NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BC817K40WH6327XTSA1 Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
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IPB073N15N5ATMA1 IPB073N15N5.pdf
IPB073N15N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
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BAS28E6327HTSA1 BAS28E6327HTSA1.pdf
BAS28E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
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IPP60R099P7 IPP60R099P7.pdf
IPP60R099P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+333.53 грн
3+278.32 грн
10+263.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ICE1HS01G1XUMA1 ICE1HS01G-1.pdf
ICE1HS01G1XUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 50...609kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: for LCD displays; SMPS
Operating voltage: 10.2...18V DC
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BC817SUE6327HTSA1 BC817UE6327.pdf
BC817SUE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+4.45 грн
101+4.10 грн
102+4.08 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
2EDL23I06PJXUMA1 2EDL23x06xx.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -2.5...1.8A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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SPP04N80C3 SPP04N80C3.pdf
SPP04N80C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 258 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+104.89 грн
10+94.15 грн
50+89.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
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IDW100E60FKSA1 IDW100E60FKSA1.pdf
IDW100E60FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; Ifsm: 400A; TO247-3; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Reverse recovery time: 120ns
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+216.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSD214SNH6327XTSA1 BSD214SNH6327XTSA1.pdf
BSD214SNH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
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BSB104N08NP3GXUSA1 BSB104N08NP3G-DTE.pdf
BSB104N08NP3GXUSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Power dissipation: 48W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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IHW40N120R5XKSA1 IHW40N120R5.pdf
IHW40N120R5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+176.74 грн
10+132.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IGW40N120H3FKSA1 IGW40N120H3-DTE.pdf
IGW40N120H3FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Gate-emitter voltage: ±20V
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+355.76 грн
10+300.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKQ40N120CH3XKSA1 IKQ40N120CH3.pdf
IKQ40N120CH3XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
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IKQ40N120CT2XKSA1 IKQ40N120CT2.pdf
IKQ40N120CT2XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
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IKY40N120CH3XKSA1 IKY40N120CH3.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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IKY40N120CS6XKSA1 IKY40N120CS6.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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XMC1404Q048X0200AAXUMA1 XMC1400-DTE.pdf
XMC1404Q048X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-VQFN-48
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Memory: 16kB SRAM; 200kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404Q064X0064AAXUMA1 XMC1400-DTE.pdf
XMC1404Q064X0064AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-VQFN-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 64kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404Q048X0064AAXUMA1 XMC1400-DTE.pdf
XMC1404Q048X0064AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-VQFN-48
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Memory: 16kB SRAM; 64kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404Q064X0128AAXUMA1 XMC1400-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-VQFN-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 128kB FLASH
Interface: CAN x2; GPIO; USIC x4
товару немає в наявності
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XMC1404F064X0064AAXUMA1 XMC1400-DTE.pdf
XMC1404F064X0064AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-LQFP-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 64kB FLASH
Interface: CAN x2; GPIO; USIC x4
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XMC1404F064X0128AAXUMA1 XMC1400-DTE.pdf
XMC1404F064X0128AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; CCU8; EEPROM emulation; internal temperature sensor; POSIF; RTC; watchdog
Case: PG-LQFP-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 128kB FLASH
Interface: CAN x2; GPIO; USIC x4
товару немає в наявності
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XMC1404F064X0200AAXUMA1 XMC1400-DTE.pdf
XMC1404F064X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-LQFP-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 200kB FLASH
Interface: CAN x2; GPIO; USIC x4
товару немає в наявності
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XMC1404Q064X0200AAXUMA1 XMC1400-DTE.pdf
XMC1404Q064X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Kind of architecture: Cortex M0
Family: XMC1400
Type of integrated circuit: ARM microcontroller
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Case: PG-VQFN-64
Kind of core: 32-bit
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Memory: 16kB SRAM; 200kB FLASH
Interface: CAN x2; GPIO; USIC x4
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BCR198E6327HTSA1 bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
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BCR198WH6327XTSA1 bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 70
Mounting: SMD
Frequency: 190MHz
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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IRFB4228PBF irfb4228pbf.pdf
IRFB4228PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 135 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+195.67 грн
10+130.49 грн
50+121.40 грн
100+118.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFH5300TRPBF irfh5300pbf.pdf
IRFH5300TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPA60R330P6XKSA1 IPA60R330P6-DTE.pdf
IPA60R330P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.33Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 32W
Drain-source voltage: 600V
Technology: CoolMOS™ P6
Kind of channel: enhancement
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IPP60R330P6XKSA1 IPP60R330P6-DTE.pdf
IPP60R330P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.33Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 93W
Drain-source voltage: 600V
Technology: CoolMOS™ P6
Kind of channel: enhancement
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BSP149H6906XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6906XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depletion
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IRLL014NTRPBF description irll014npbf.pdf
IRLL014NTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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PVI1050NSPBF pvin.pdf
PVI1050NSPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
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IRLB3036PBF irlb3036pbf.pdf
IRLB3036PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+128.08 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BFN26E6327 BFN26.pdf
BFN26E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
на замовлення 4549 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.23 грн
95+4.38 грн
119+3.49 грн
250+3.27 грн
500+3.20 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
AUIRGSL4062D1 AUIRGx4062D1.pdf
AUIRGSL4062D1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Technology: Trench
Gate charge: 77nC
Turn-on time: 35ns
Turn-off time: 176ns
Power dissipation: 123W
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Collector-emitter voltage: 600V
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+347.76 грн
3+300.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRGP4062D AUIRGP4062D.pdf
AUIRGP4062D
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
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IRGSL4062DPBF irgs4062dpbf.pdf
IRGSL4062DPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Power dissipation: 250W
Collector current: 48A
Collector-emitter voltage: 600V
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IRG4PSH71KDPBF irg4psh71kdpbf.pdf
IRG4PSH71KDPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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IRG4PSH71UDPBF description irg4psh71udpbf.pdf
IRG4PSH71UDPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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IRG4RC10UDPBF irg4rc10udpbf.pdf
IRG4RC10UDPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
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IRG4PH20KDPBF irg4ph20kdpbf.pdf
IRG4PH20KDPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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IRG4IBC10UDPBF irg4ibc10udpbf.pdf
IRG4IBC10UDPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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IRG4IBC30WPBF irg4ibc30wpbf.pdf
IRG4IBC30WPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
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IRG4RC10KDTRPBF IRG4RC10KDTRPBF.pdf
IRG4RC10KDTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
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AUIRG4PH50S auirg4ph50s.pdf
AUIRG4PH50S
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
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AUIRG4PC40S-E IRSDS19208-1.pdf?t.download=true&u=5oefqw auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
на замовлення 39600 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
400+501.63 грн
Мінімальне замовлення: 400
В кошику  од. на суму  грн.
ICE3BR4765JGXUMA1 ICE3BR4765JG.pdf
ICE3BR4765JGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+92.50 грн
25+84.24 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ICE3BR4765JFKLA1 Datasheet_ICE3BR4765J_v2_2_10Jun08.pdf?folderId=db3a3043156fd5730115da1adffb1528&fileId=db3a3043156fd5730115da40851e152a
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+82.72 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BGS12SN6E6327XTSA1 Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
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