Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149635) > Сторінка 2478 з 2494
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FS150R12KT4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: AG-ECONO3-4 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 750W Technology: EconoPACK™ 3 Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FF500R17KE4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 500A Case: AG-62MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FF300R17ME4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.8kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONOD-3 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FS150R17PE4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 4 Case: AG-ECONO4-1 Topology: IGBT three-phase bridge; NTC thermistor Pulsed collector current: 300A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FF900R12ME7B11BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: TRENCHSTOP™ Topology: IGBT half-bridge; NTC thermistor Case: AG-ECONOD-5 Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FS200R12KT4RB11BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FP75R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of module: IGBT |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
FS150R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of semiconductor module: IGBT |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
FS100R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Module: IGBT Type of semiconductor module: IGBT |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
F3L300R07PE4PBOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of module: IGBT |
на замовлення 202 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IRS2004STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
BCW67CE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz |
на замовлення 1380 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BCW68FE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
BCW68GE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 57000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BC817K40E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 78000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BC817K40WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BCP5316H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 7000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BC850CWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 42000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
IRFB4227PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB Case: TO220AB Drain-source voltage: 200V Drain current: 65A Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tube Kind of channel: enhancement Mounting: THT |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BTS244ZE3043AKSA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 19A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-5 On-state resistance: 13mΩ Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C Output voltage: 55V Power dissipation: 170W Integrated circuit features: internal temperature sensor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SPP15N60C3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 700 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
IPA65R380C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhancement Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPB65R380C6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPD65R380C6BTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 10.6A Drain-source voltage: 650V Power dissipation: 83W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.38Ω Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPD65R380E6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 10.6A Drain-source voltage: 650V Power dissipation: 83W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.38Ω Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPD65R380E6BTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 10.6A Drain-source voltage: 650V Power dissipation: 83W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.38Ω Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPI65R380C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPP50R380CEXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Power dissipation: 73W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
IPA50R380CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP Drain-source voltage: 500V Drain current: 4A On-state resistance: 0.38Ω Type of transistor: N-MOSFET Power dissipation: 29.2W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
на замовлення 477 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
IPD50R380CEAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
TLD2314ELXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Technology: Litix™ Case: PG-SSOP-14-EP Output current: 0.12A Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V DC Protection: overheating OTP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
S25FL064LABNFA043 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Application: automotive Kind of package: reel; tape Operating frequency: 108MHz Kind of interface: serial Memory: 64Mb FLASH Mounting: SMD Operating temperature: -40...85°C Case: USON8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29GL064S70BHA043 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; FBGA48; parallel Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Application: automotive Kind of package: reel; tape Kind of interface: parallel Memory: 64Mb FLASH Mounting: SMD Operating temperature: -40...85°C Case: FBGA48 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRFP4468PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC Mounting: THT Case: TO247AC Drain-source voltage: 100V Drain current: 290A Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BSS806NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 20V Drain current: 2.3A On-state resistance: 82mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±8V |
на замовлення 4129 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BSS83PH6327 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Case: SOT23 On-state resistance: 2Ω Mounting: SMD Power: 0.36W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IRFP4568PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC Type of transistor: N-MOSFET Case: TO247AC Drain-source voltage: 150V Drain current: 171A Polarisation: unipolar Kind of package: tube Kind of channel: enhancement Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IPD50N06S214ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BTS436L2GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
PVG612APBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 353 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IRFP4668PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 130A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IPA030N10NF2SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 460 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
CYPD3177-24LQXQ | INFINEON TECHNOLOGIES |
![]() Description: IC: interface Type of integrated circuit: interface |
на замовлення 3900 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IRFB4020PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TC387QP160F300SAEKXUMA2 | INFINEON TECHNOLOGIES |
![]() Description: TC387QP160F300SAEKXUMA2 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
FP40R12KE3 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Case: AG-ECONO2-5 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 80A Application: Inverter Power dissipation: 200W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FP40R12KE3BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT |
на замовлення 810 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
BSC520N15NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 21A Power dissipation: 57W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IRF7103TRPBFXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 3A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
IKCM10H60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: PG-MDIP24 Output current: -10...10A Mounting: THT Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Power dissipation: 23.1W Integrated circuit features: integrated bootstrap functionality Technology: ClPOS™ Mini; TRENCHSTOP™ Topology: IGBT three-phase bridge; thermistor Operating temperature: -40...125°C Voltage class: 600V |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
IRF7311TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IRF7341GTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 5.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3866 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
IRF7341TRPBFXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.7A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AUIRFN8405TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IRF3007STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Case: D2PAK Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Drain current: 62A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRFR6215TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 13A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CY8CMBR3106S-LQXI | INFINEON TECHNOLOGIES |
![]() Description: CY8CMBR3106S-LQXI |
на замовлення 4380 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
CY8CMBR3102-SX1IT | INFINEON TECHNOLOGIES |
![]() Description: CY8CMBR3102-SX1IT |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BSC094N06LS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IPB034N06N3GATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
FS150R12KT4BOSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 750W
Technology: EconoPACK™ 3
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 750W
Technology: EconoPACK™ 3
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
FF500R17KE4BOSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 500A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 500A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
FF300R17ME4BOSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
товару немає в наявності
В кошику
од. на суму грн.
FS150R17PE4BOSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
товару немає в наявності
В кошику
од. на суму грн.
FF900R12ME7B11BOSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-5
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-5
Max. off-state voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
FS200R12KT4RB11BOSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
FP75R12KE3BOSA1 |
![]() |
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 9903.42 грн |
FS150R12KE3BOSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
на замовлення 250 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 11997.88 грн |
FS100R12KE3BOSA1 |
![]() ![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
на замовлення 86 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 9793.92 грн |
F3L300R07PE4PBOSA1 |
![]() |
на замовлення 202 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 13891.46 грн |
IRS2004STRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 52.69 грн |
BCW67CE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
на замовлення 1380 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.64 грн |
41+ | 9.33 грн |
52+ | 7.40 грн |
100+ | 6.51 грн |
250+ | 5.81 грн |
255+ | 3.50 грн |
700+ | 3.31 грн |
BCW68FE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
71+ | 5.86 грн |
100+ | 4.87 грн |
239+ | 3.73 грн |
656+ | 3.53 грн |
3000+ | 3.48 грн |
BCW68GE6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 57000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.54 грн |
BC817K40E6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 78000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.73 грн |
BC817K40WH6327XTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.25 грн |
BCP5316H6327XTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 7000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 10.04 грн |
BC850CWH6327XTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 42000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.82 грн |
IRFB4227PBFXKMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Case: TO220AB
Drain-source voltage: 200V
Drain current: 65A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Case: TO220AB
Drain-source voltage: 200V
Drain current: 65A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
на замовлення 81 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 163.01 грн |
10+ | 107.03 грн |
15+ | 61.92 грн |
40+ | 58.87 грн |
BTS244ZE3043AKSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 19A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-5
On-state resistance: 13mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 55V
Power dissipation: 170W
Integrated circuit features: internal temperature sensor
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 19A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-5
On-state resistance: 13mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 55V
Power dissipation: 170W
Integrated circuit features: internal temperature sensor
товару немає в наявності
В кошику
од. на суму грн.
SPP15N60C3XKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 100.44 грн |
IPA65R380C6XKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
IPB65R380C6ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IPD65R380C6BTMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 10.6A
Drain-source voltage: 650V
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 10.6A
Drain-source voltage: 650V
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
IPD65R380E6ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 10.6A
Drain-source voltage: 650V
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 10.6A
Drain-source voltage: 650V
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
IPD65R380E6BTMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 10.6A
Drain-source voltage: 650V
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 10.6A
Drain-source voltage: 650V
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
IPI65R380C6XKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IPP50R380CEXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 61 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 85.62 грн |
10+ | 67.20 грн |
24+ | 38.30 грн |
IPA50R380CEXKSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Drain-source voltage: 500V
Drain current: 4A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 29.2W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Drain-source voltage: 500V
Drain current: 4A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 29.2W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
на замовлення 477 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 84.80 грн |
10+ | 56.95 грн |
20+ | 45.18 грн |
55+ | 42.73 грн |
250+ | 41.13 грн |
IPD50R380CEAUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 29.64 грн |
TLD2314ELXUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
товару немає в наявності
В кошику
од. на суму грн.
S25FL064LABNFA043 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 108MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: USON8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 108MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: USON8
товару немає в наявності
В кошику
од. на суму грн.
S29GL064S70BHA043 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
товару немає в наявності
В кошику
од. на суму грн.
IRFP4468PBFXKMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Mounting: THT
Case: TO247AC
Drain-source voltage: 100V
Drain current: 290A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Mounting: THT
Case: TO247AC
Drain-source voltage: 100V
Drain current: 290A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BSS806NH6327XTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±8V
на замовлення 4129 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
26+ | 15.06 грн |
33+ | 11.70 грн |
50+ | 9.94 грн |
100+ | 8.41 грн |
182+ | 4.97 грн |
499+ | 4.66 грн |
BSS83PH6327 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Power: 0.36W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Power: 0.36W
товару немає в наявності
В кошику
од. на суму грн.
IRFP4568PBFXKMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Case: TO247AC
Drain-source voltage: 150V
Drain current: 171A
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Case: TO247AC
Drain-source voltage: 150V
Drain current: 171A
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
IPD50N06S214ATMA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 55.16 грн |
BTS436L2GATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 215.70 грн |
PVG612APBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 353 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 732.73 грн |
IRFP4668PBFXKMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IPA030N10NF2SXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 460 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 146.55 грн |
200+ | 122.32 грн |
CYPD3177-24LQXQ |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
490+ | 107.03 грн |
IRFB4020PBFXKMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
TC387QP160F300SAEKXUMA2 |
![]() |
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 3466.07 грн |
FP40R12KE3 | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Case: AG-ECONO2-5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 80A
Application: Inverter
Power dissipation: 200W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Case: AG-ECONO2-5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 80A
Application: Inverter
Power dissipation: 200W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
FP40R12KE3BPSA1 |
![]() |
на замовлення 810 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 6856.40 грн |
BSC520N15NS3GATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF7103TRPBFXTMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IKCM10H60GAXKMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Mounting: THT
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 23.1W
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Operating temperature: -40...125°C
Voltage class: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Mounting: THT
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 23.1W
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Operating temperature: -40...125°C
Voltage class: 600V
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 712.15 грн |
2+ | 506.86 грн |
5+ | 479.33 грн |
IRF7311TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF7341GTRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3866 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.08 грн |
10+ | 93.27 грн |
17+ | 55.04 грн |
45+ | 51.99 грн |
2000+ | 50.46 грн |
IRF7341TRPBFXTMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
AUIRFN8405TR |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4000+ | 121.85 грн |
IRF3007STRLPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Drain current: 62A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Drain current: 62A
товару немає в наявності
В кошику
од. на суму грн.
IRFR6215TRLPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
CY8CMBR3106S-LQXI |
![]() |
на замовлення 4380 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
490+ | 39.93 грн |
CY8CMBR3102-SX1IT |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8CMBR3102-SX1IT
Category: Integrated circuits - Unclassified
Description: CY8CMBR3102-SX1IT
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 97.15 грн |
BSC094N06LS5ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 23.79 грн |
IPB034N06N3GATMA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 52.69 грн |