Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149481) > Сторінка 2478 з 2492
| Фото | Назва | Виробник | Інформація |
Доступність |
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| FZ600R12KS4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM-2 Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MM-2 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Power dissipation: 3.9kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPD60R650CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W Technology: CoolMOS™ CE Mounting: SMD Polarisation: unipolar Gate charge: 20.5nC On-state resistance: 0.65Ω Drain current: 6.2A Pulsed drain current: 19A Gate-source voltage: ±20V Power dissipation: 82W Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Case: PG-TO252-3 |
на замовлення 2177 шт: термін постачання 21-30 дні (днів) |
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EVAL-IMM101T-046TOBO1 (SP004177752) | INFINEON TECHNOLOGIES |
Category: Development kits - othersDescription: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors Kit contents: prototype board Type of development kit: evaluation Interface: GPIO; I2C; PWM; UART Kind of module: motor driver Components: IMM101T-046M Kind of connector: screw terminal x2 Application: motors |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BF2040E6814HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT Kind of channel: depletion Features of semiconductor devices: dual gate Type of transistor: N-MOSFET Kind of transistor: RF Polarisation: unipolar Drain current: 40mA Power dissipation: 0.2W Drain-source voltage: 8V Gate-source voltage: ±10V Open-loop gain: 23dB Frequency: 800MHz Kind of package: reel; tape Electrical mounting: SMT Case: SOT143 |
на замовлення 3630 шт: термін постачання 21-30 дні (днів) |
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| IRFS4510TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK Mounting: SMD Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 250A Drain current: 43A On-state resistance: 13.9mΩ Gate-source voltage: ±20V Power dissipation: 140W Case: D2PAK Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSP316PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Technology: SIPMOS™ Drain-source voltage: -100V Drain current: -0.68A Power dissipation: 1.8W On-state resistance: 1.8Ω Gate-source voltage: ±20V Polarisation: unipolar Case: PG-SOT223 |
на замовлення 724 шт: термін постачання 21-30 дні (днів) |
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BCR148SH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ Type of transistor: NPN x2 Kind of transistor: BRT Mounting: SMD Case: SOT363 Collector current: 0.1A Power dissipation: 0.25W Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Frequency: 100MHz |
на замовлення 2160 шт: термін постачання 21-30 дні (днів) |
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T560N16TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristorsDescription: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA Type of thyristor: hockey-puck Max. off-state voltage: 1.6kV Max. load current: 809A Load current: 559A Gate current: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 8kA Features of semiconductor devices: phase controlled thyristor (PCT) |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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2ED2181S06FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -2.5...2.5A Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Mounting: SMD Supply voltage: 10...20V Protection: undervoltage UVP Voltage class: 650V Topology: IGBT half-bridge; MOSFET half-bridge Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFB3307PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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BCR402WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Case: SOT343 Mounting: SMD Number of channels: 1 Operating voltage: 1.2...18V DC Integrated circuit features: linear dimming Kind of integrated circuit: current regulator; LED driver Type of integrated circuit: driver Topology: single transistor Output current: 20...60mA |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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IPD12CN10NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 67A Power dissipation: 125W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 1666 шт: термін постачання 21-30 дні (днів) |
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BB639E7904HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape Type of diode: varicap Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Features of semiconductor devices: RF Capacitance: 2.4...40pF Leakage current: 0.2µA Load current: 20mA Max. off-state voltage: 30V |
на замовлення 2589 шт: термін постачання 21-30 дні (днів) |
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| IPP040N06NXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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| BC850BWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
на замовлення 33000 шт: термін постачання 21-30 дні (днів) |
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| IPP014N06NF2SAKMA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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| SGP15N120XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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| BC857CE6433HTMA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
на замовлення 50000 шт: термін постачання 21-30 дні (днів) |
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| BC857CWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 420 Mounting: SMD |
на замовлення 57000 шт: термін постачання 21-30 дні (днів) |
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IPB015N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD On-state resistance: 1.5mΩ Drain current: 180A Drain-source voltage: 80V Power dissipation: 375W Technology: OptiMOS™ 5 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| IRFS7537TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 173A; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 173A Case: D2PAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRFB3004PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 340A Power dissipation: 380W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.75mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| FF200R12KS4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.4kW Topology: IGBT half-bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FF400R12KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: FF400R12KE3HOSA1 |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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| BSC155N06NDATMA1 | INFINEON TECHNOLOGIES |
Category: Transistors - UnclassifiedDescription: BSC155N06NDATMA1 |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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IPP600N25N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3 Case: PG-TO220-3 Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar On-state resistance: 60mΩ Gate-source voltage: ±20V Drain current: 25A Power dissipation: 136W Drain-source voltage: 250V Technology: OptiMOS™ 3 Kind of channel: enhancement |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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IR2114SSPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24 Mounting: SMD Operating temperature: -40...125°C Output current: -1.5...1A Power: 1.5W Number of channels: 2 Supply voltage: 10.4...20V DC Turn-off time: 440ns Topology: IGBT half-bridge Kind of integrated circuit: gate driver; high-/low-side Type of integrated circuit: driver Case: SSOP24 Voltage class: 0.6/1.2kV Turn-on time: 440ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| PVG612SPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state Type of relay: solid state |
на замовлення 221 шт: термін постачання 21-30 дні (днів) |
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1EDC10I12MHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Output current: -1...1A Mounting: SMD Number of channels: 1 Case: PG-DSO-8 Supply voltage: 3.1...17V; 13...18V Kind of package: reel; tape Integrated circuit features: active Miller clamp; galvanically isolated Voltage class: 600/650/1200V Technology: EiceDRIVER™ Topology: single transistor |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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BSC014N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC014N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC847BE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 920 шт: термін постачання 21-30 дні (днів) |
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| IR2130JTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver Type of integrated circuit: driver |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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IRF7493TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 9.2A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IRS2113MTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver Type of integrated circuit: driver |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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IPB011N04LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD On-state resistance: 1.1mΩ Drain current: 180A Drain-source voltage: 40V Power dissipation: 250W Technology: OptiMOS™ 3 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB011N04NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD On-state resistance: 1.1mΩ Drain current: 180A Drain-source voltage: 40V Power dissipation: 250W Technology: OptiMOS™ 3 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPP011N04NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 888 шт: термін постачання 21-30 дні (днів) |
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IRF1018ESTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK Case: D2PAK Mounting: SMD Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Pulsed drain current: 315A On-state resistance: 8.4mΩ Type of transistor: N-MOSFET Power dissipation: 110W Technology: HEXFET® Gate-source voltage: ±20V Kind of channel: enhancement |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
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| IPD047N03LF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT Technology: MOSFET Gate-source voltage: 20V Drain-source voltage: 30V Drain current: 71A Power dissipation: 65W Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Electrical mounting: SMT On-state resistance: 4.7mΩ |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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IPP60R250CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IKD06N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 15ns Turn-off time: 128ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF8010PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 260W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 15mΩ Gate-source voltage: ±20V Gate charge: 81nC |
на замовлення 499 шт: термін постачання 21-30 дні (днів) |
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| IRF7328TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRF7328TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP60R120P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 95W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB60R120P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 95W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Gate charge: 36nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC340N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 23A Power dissipation: 32W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
на замовлення 4431 шт: термін постачання 21-30 дні (днів) |
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BSC080N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 35W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
на замовлення 1482 шт: термін постачання 21-30 дні (днів) |
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BSC010N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC010N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC022N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFR2307ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 53A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AUIRFR2905ZTRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; N; 55V; 42A; 110W; DPAK; automotive industry Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: N Drain-source voltage: 55V Drain current: 42A Power dissipation: 110W Case: DPAK Gate-source voltage: 20V On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhancement Electrical mounting: SMT Application: automotive industry |
на замовлення 60000 шт: термін постачання 21-30 дні (днів) |
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IRFB3006GPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIRF2804L | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 300W Case: TO262 Mounting: THT Kind of channel: enhancement Gate-source voltage: ±20V Gate charge: 160nC On-state resistance: 2mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIRF7342QTR | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -3.4A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of channel: enhancement On-state resistance: 0.17Ω Gate charge: 26nC Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IRL40SC209 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1600 шт: термін постачання 21-30 дні (днів) |
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BSP752R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Technology: Classic PROFET Output voltage: 52V Kind of output: N-Channel |
на замовлення 2333 шт: термін постачання 21-30 дні (днів) |
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| ICE3BR4765JFKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| FZ600R12KS4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM-2
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-2
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 3.9kW
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM-2
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-2
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 3.9kW
товару немає в наявності
В кошику
од. на суму грн.
| IPD60R650CEAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Technology: CoolMOS™ CE
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.65Ω
Drain current: 6.2A
Pulsed drain current: 19A
Gate-source voltage: ±20V
Power dissipation: 82W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Technology: CoolMOS™ CE
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.65Ω
Drain current: 6.2A
Pulsed drain current: 19A
Gate-source voltage: ±20V
Power dissipation: 82W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252-3
на замовлення 2177 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 45.92 грн |
| 25+ | 40.67 грн |
| 100+ | 40.35 грн |
| EVAL-IMM101T-046TOBO1 (SP004177752) |
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Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Kit contents: prototype board
Type of development kit: evaluation
Interface: GPIO; I2C; PWM; UART
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Application: motors
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Kit contents: prototype board
Type of development kit: evaluation
Interface: GPIO; I2C; PWM; UART
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Application: motors
товару немає в наявності
В кошику
од. на суму грн.
| BF2040E6814HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Kind of channel: depletion
Features of semiconductor devices: dual gate
Type of transistor: N-MOSFET
Kind of transistor: RF
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.2W
Drain-source voltage: 8V
Gate-source voltage: ±10V
Open-loop gain: 23dB
Frequency: 800MHz
Kind of package: reel; tape
Electrical mounting: SMT
Case: SOT143
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Kind of channel: depletion
Features of semiconductor devices: dual gate
Type of transistor: N-MOSFET
Kind of transistor: RF
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.2W
Drain-source voltage: 8V
Gate-source voltage: ±10V
Open-loop gain: 23dB
Frequency: 800MHz
Kind of package: reel; tape
Electrical mounting: SMT
Case: SOT143
на замовлення 3630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 19.25 грн |
| 35+ | 12.30 грн |
| 100+ | 10.82 грн |
| 500+ | 9.92 грн |
| 1000+ | 9.10 грн |
| 3000+ | 9.02 грн |
| IRFS4510TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 43A
On-state resistance: 13.9mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 43A
On-state resistance: 13.9mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| BSP316PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -0.68A
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -0.68A
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
на замовлення 724 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.14 грн |
| 23+ | 17.96 грн |
| BCR148SH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 100MHz
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 10.95 грн |
| 55+ | 7.46 грн |
| 100+ | 6.64 грн |
| 500+ | 5.90 грн |
| T560N16TOFXPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9215.56 грн |
| 2ED2181S06FXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IRFB3307PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.08 грн |
| 4+ | 123.83 грн |
| 10+ | 102.51 грн |
| BCR402WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Topology: single transistor
Output current: 20...60mA
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Topology: single transistor
Output current: 20...60mA
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.04 грн |
| 42+ | 9.92 грн |
| 100+ | 8.77 грн |
| 500+ | 7.87 грн |
| 1000+ | 7.38 грн |
| IPD12CN10NGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1666 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 113.17 грн |
| 10+ | 90.21 грн |
| 20+ | 80.37 грн |
| 50+ | 68.88 грн |
| 100+ | 68.06 грн |
| BB639E7904HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 2.4...40pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 2.4...40pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
на замовлення 2589 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.01 грн |
| 41+ | 10.17 грн |
| 75+ | 7.24 грн |
| 100+ | 6.90 грн |
| 500+ | 5.37 грн |
| 1000+ | 4.86 грн |
| IPP040N06NXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 70.65 грн |
| BC850BWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 33000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.04 грн |
| IPP014N06NF2SAKMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 159.85 грн |
| 200+ | 133.67 грн |
| SGP15N120XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 299.38 грн |
| 150+ | 250.12 грн |
| BC857CE6433HTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 50000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.67 грн |
| BC857CWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
на замовлення 57000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.97 грн |
| IPB015N08N5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.5mΩ
Drain current: 180A
Drain-source voltage: 80V
Power dissipation: 375W
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.5mΩ
Drain current: 180A
Drain-source voltage: 80V
Power dissipation: 375W
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.10 грн |
| 10+ | 214.04 грн |
| 100+ | 191.89 грн |
| 250+ | 181.23 грн |
| IRFS7537TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| IRFB3004PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 190.76 грн |
| 10+ | 159.91 грн |
| 100+ | 139.41 грн |
| FF200R12KS4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.4kW
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.4kW
Topology: IGBT half-bridge
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В кошику
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| FF400R12KE3HOSA1 |
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на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 16042.23 грн |
| BSC155N06NDATMA1 |
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на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 38.06 грн |
| IPP600N25N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 60mΩ
Gate-source voltage: ±20V
Drain current: 25A
Power dissipation: 136W
Drain-source voltage: 250V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 60mΩ
Gate-source voltage: ±20V
Drain current: 25A
Power dissipation: 136W
Drain-source voltage: 250V
Technology: OptiMOS™ 3
Kind of channel: enhancement
на замовлення 92 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 192.52 грн |
| 10+ | 158.27 грн |
| IR2114SSPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Turn-off time: 440ns
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SSOP24
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Turn-off time: 440ns
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SSOP24
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 530.77 грн |
| PVG612SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 221 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 437.15 грн |
| 1EDC10I12MHXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -1...1A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -1...1A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 204.01 грн |
| 5+ | 180.41 грн |
| BSC014N04LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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В кошику
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| BSC014N04LSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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В кошику
од. на суму грн.
| BC847BE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.48 грн |
| 50+ | 8.28 грн |
| 65+ | 6.31 грн |
| 100+ | 5.60 грн |
| 250+ | 4.79 грн |
| IR2130JTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 369.15 грн |
| IRF7493TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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В кошику
од. на суму грн.
| IRS2113MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 122.76 грн |
| IPB011N04LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Drain current: 180A
Drain-source voltage: 40V
Power dissipation: 250W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Drain current: 180A
Drain-source voltage: 40V
Power dissipation: 250W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
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В кошику
од. на суму грн.
| IPB011N04NGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Drain current: 180A
Drain-source voltage: 40V
Power dissipation: 250W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Drain current: 180A
Drain-source voltage: 40V
Power dissipation: 250W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
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од. на суму грн.
| IPP011N04NF2SAKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 888 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 89.20 грн |
| IRF1018ESTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Case: D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
On-state resistance: 8.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 110W
Technology: HEXFET®
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Case: D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
On-state resistance: 8.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 110W
Technology: HEXFET®
Gate-source voltage: ±20V
Kind of channel: enhancement
на замовлення 197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 104.21 грн |
| 6+ | 81.19 грн |
| 10+ | 72.99 грн |
| 50+ | 59.86 грн |
| 100+ | 57.40 грн |
| IPD047N03LF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT
Technology: MOSFET
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
On-state resistance: 4.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT
Technology: MOSFET
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
On-state resistance: 4.7mΩ
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 22.87 грн |
| IPP60R250CPXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| IKD06N60RFATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
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| IRF8010PBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Gate charge: 81nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Gate charge: 81nC
на замовлення 499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.38 грн |
| 6+ | 80.37 грн |
| 10+ | 74.63 грн |
| 50+ | 63.14 грн |
| 100+ | 59.04 грн |
| IRF7328TRPBFXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| IRF7328TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
товару немає в наявності
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| IPP60R120P7 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| IPB60R120P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 36nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 36nC
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| BSC340N08NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 4431 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.57 грн |
| 12+ | 36.66 грн |
| 100+ | 27.39 грн |
| 250+ | 24.19 грн |
| 500+ | 21.98 грн |
| 1000+ | 19.93 грн |
| 2000+ | 18.04 грн |
| 2500+ | 17.47 грн |
| BSC080N03MSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 1482 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.51 грн |
| 15+ | 28.62 грн |
| 100+ | 26.57 грн |
| 250+ | 25.34 грн |
| 500+ | 22.72 грн |
| 1000+ | 22.63 грн |
| BSC010N04LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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| BSC010N04LSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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| BSC022N04LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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| IRFR2307ZTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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| AUIRFR2905ZTRL |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 42A; 110W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 42A; 110W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
на замовлення 60000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 84.78 грн |
| IRFB3006GPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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| AUIRF2804L |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
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| AUIRF7342QTR |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.17Ω
Gate charge: 26nC
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.17Ω
Gate charge: 26nC
Gate-source voltage: ±20V
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| IRL40SC209 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 156.32 грн |
| BSP752R |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Kind of output: N-Channel
на замовлення 2333 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.78 грн |
| 10+ | 135.31 грн |
| 25+ | 123.01 грн |
| 100+ | 104.97 грн |
| 250+ | 94.31 грн |
| 500+ | 86.93 грн |
| ICE3BR4765JFKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 101.56 грн |























