Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149693) > Сторінка 2477 з 2495
Фото | Назва | Виробник | Інформація |
Доступність |
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BSS214NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 5605 шт: термін постачання 21-30 дні (днів) |
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IPI029N06NAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3 Type of transistor: N-MOSFET Case: PG-TO262-3 Drain-source voltage: 60V Drain current: 100A On-state resistance: 2.9mΩ Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR08PNH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Base-emitter resistor: 47kΩ Frequency: 170MHz Base resistor: 2.2kΩ |
на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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BSC072N08NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Case: PG-TDSON-8 Drain-source voltage: 80V Drain current: 74A On-state resistance: 7.2mΩ Mounting: SMD Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB055N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 68W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
F4150R12KS4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Power dissipation: 960W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 3 Topology: IGBT half-bridge x2; NTC thermistor Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IAUC100N08S5N031ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of package: reel; tape Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IAUC100N08S5N034ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W Case: PG-TDSON-8 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 22A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Kind of package: reel; tape Gate charge: 66nC Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IAUC100N08S5N043ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W Case: PG-TDSON-8 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 76A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of package: reel; tape Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TLE7184FXUMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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TLE7230RAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
на замовлення 3200 шт: термін постачання 21-30 дні (днів) |
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TLE7469GV52AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator Type of integrated circuit: voltage regulator |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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IRF1010ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 3200 шт: термін постачання 21-30 дні (днів) |
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BCR555E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR555E6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPD040N03LF2SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IPD040N03LF2SATMA1 |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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ISZ040N03L5ISATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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BSP125H6433XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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ESD130B1W0201E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: ESD130B1W0201E6327XTSA1 |
на замовлення 45000 шт: термін постачання 21-30 дні (днів) |
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ESD131B1W0201E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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IRL7486MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 209A Case: DirectFET Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRF7480MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Case: DirectFET Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSZ065N03LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 26W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FS75R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A Power dissipation: 350W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPACK™ 2 Topology: IGBT three-phase bridge; NTC thermistor Case: AG-ECONO2-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FS75R12KE3BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of semiconductor module: IGBT |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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XMC1302Q024X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Number of inputs/outputs: 22 Number of 16bit timers: 8 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1300 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-24 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1404Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 42 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-48 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1402F064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Number of inputs/outputs: 55 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-LQFP-64 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1402Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Number of inputs/outputs: 42 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-48 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1402Q064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Number of inputs/outputs: 55 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-64 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
XMC1402Q040X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Number of inputs/outputs: 35 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-40 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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XMC1100T016X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 Memory: 16kB SRAM; 64kB FLASH Case: PG-TSSOP-16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 Memory: 16kB SRAM; 64kB FLASH Case: PG-TSSOP-38 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
XMC1302Q040X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Number of inputs/outputs: 34 Number of 16bit timers: 8 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-40 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CY8C5287AXI-LP095 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PVT412LPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 605 шт: термін постачання 21-30 дні (днів) |
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PVT412APBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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PVT412ASPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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PVT412PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 958 шт: термін постачання 21-30 дні (днів) |
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PVT412LS-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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PVT412S-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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IPA80R750P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD Mounting: THT Case: TO220FP Drain-source voltage: 800V Drain current: 3.9A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Power dissipation: 26W Polarisation: unipolar Kind of package: tube Version: ESD Gate charge: 15nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 487 шт: термін постачання 21-30 дні (днів) |
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BSS138IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 78000 шт: термін постачання 21-30 дні (днів) |
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IPD30N06S2L23ATMA3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 350000 шт: термін постачання 21-30 дні (днів) |
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IPD30N06S4L23ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IDH20G65C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W Type of diode: Schottky rectifying Technology: CoolSiC™ 6G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward impulse current: 79A Leakage current: 153µA Kind of package: tube Power dissipation: 108W Heatsink thickness: 1.17...1.37mm Max. forward voltage: 1.25V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDH20G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward impulse current: 119A Leakage current: 4.1µA Kind of package: tube Power dissipation: 157W Heatsink thickness: 1.17...137mm Max. forward voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDH20G120C5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward impulse current: 0.168kA Leakage current: 8.5µA Kind of package: tube Power dissipation: 330W Max. forward voltage: 1.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IRL40SC228 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 557A Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 787 шт: термін постачання 21-30 дні (днів) |
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IRL40S212ARMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 254A Case: D2PAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRL40T209ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 40V Drain current: 586A Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IR21531STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BAS2103WE6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching Type of diode: switching |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
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IRLR3636TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 99A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IPD50N03S4L06ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IPP050N03LF2SAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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PVT312PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 118 шт: термін постачання 21-30 дні (днів) |
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BTS118D | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-3 On-state resistance: 0.1Ω Technology: HITFET® Output voltage: 42V Power dissipation: 21W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PVT212S-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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IRF7328TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
BSS214NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 5605 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.93 грн |
27+ | 14.56 грн |
50+ | 8.95 грн |
100+ | 7.93 грн |
195+ | 4.61 грн |
250+ | 4.60 грн |
536+ | 4.35 грн |
IPI029N06NAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Case: PG-TO262-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.9mΩ
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Case: PG-TO262-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.9mΩ
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
BCR08PNH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Base resistor: 2.2kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Base resistor: 2.2kΩ
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
35+ | 12.21 грн |
40+ | 10.12 грн |
100+ | 8.97 грн |
115+ | 7.89 грн |
315+ | 7.43 грн |
BSC072N08NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 74A
On-state resistance: 7.2mΩ
Mounting: SMD
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 74A
On-state resistance: 7.2mΩ
Mounting: SMD
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
IPB055N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику
од. на суму грн.
F4150R12KS4BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
IAUC100N08S5N031ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
товару немає в наявності
В кошику
од. на суму грн.
IAUC100N08S5N034ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
Technology: OptiMOS™ 5
товару немає в наявності
В кошику
од. на суму грн.
IAUC100N08S5N043ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
товару немає в наявності
В кошику
од. на суму грн.
TLE7184FXUMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2000+ | 246.76 грн |
TLE7230RAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 3200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
800+ | 358.17 грн |
TLE7469GV52AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 184.04 грн |
IRF1010ZSTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
800+ | 46.22 грн |
BCR555E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
BCR555E6433HTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
IPD040N03LF2SATMA1 |
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на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2000+ | 25.42 грн |
ISZ040N03L5ISATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 18.16 грн |
BSP125H6433XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4000+ | 19.97 грн |
ESD130B1W0201E6327XTSA1 |
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на замовлення 45000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15000+ | 2.13 грн |
ESD131B1W0201E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15000+ | 3.10 грн |
IRL7486MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF7480MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BSZ065N03LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FS75R12KE3BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO2-6
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO2-6
товару немає в наявності
В кошику
од. на суму грн.
FS75R12KE3BPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 5104.38 грн |
XMC1302Q024X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 22
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-24
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 22
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-24
товару немає в наявності
В кошику
од. на суму грн.
XMC1404Q048X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
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XMC1402F064X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-LQFP-64
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XMC1402Q048X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
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XMC1402Q064X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
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XMC1402Q040X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 35
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 35
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
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XMC1100T016X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-16
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-16
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XMC1100T038X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
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XMC1302Q040X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
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CY8C5287AXI-LP095 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
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PVT412LPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 605 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 313.61 грн |
100+ | 262.09 грн |
PVT412APBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 167 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 507.55 грн |
PVT412ASPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 104 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 507.55 грн |
PVT412PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 958 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 313.61 грн |
100+ | 262.09 грн |
PVT412LS-TPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
750+ | 278.95 грн |
PVT412S-TPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
750+ | 283.07 грн |
IPA80R750P7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD
Mounting: THT
Case: TO220FP
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Gate charge: 15nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD
Mounting: THT
Case: TO220FP
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Gate charge: 15nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 487 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 120.49 грн |
10+ | 88.13 грн |
16+ | 59.01 грн |
42+ | 55.94 грн |
BSS138IXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 78000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.64 грн |
IPD30N06S2L23ATMA3 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 350000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 37.47 грн |
IPD30N06S4L23ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 29.71 грн |
IDH20G65C6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 79A
Leakage current: 153µA
Kind of package: tube
Power dissipation: 108W
Heatsink thickness: 1.17...1.37mm
Max. forward voltage: 1.25V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 79A
Leakage current: 153µA
Kind of package: tube
Power dissipation: 108W
Heatsink thickness: 1.17...1.37mm
Max. forward voltage: 1.25V
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IDH20G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 119A
Leakage current: 4.1µA
Kind of package: tube
Power dissipation: 157W
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 119A
Leakage current: 4.1µA
Kind of package: tube
Power dissipation: 157W
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
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IDH20G120C5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 0.168kA
Leakage current: 8.5µA
Kind of package: tube
Power dissipation: 330W
Max. forward voltage: 1.5V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 0.168kA
Leakage current: 8.5µA
Kind of package: tube
Power dissipation: 330W
Max. forward voltage: 1.5V
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IRL40SC228 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 787 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 233.56 грн |
6+ | 152.50 грн |
17+ | 144.07 грн |
IRL40S212ARMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 254A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 254A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRL40T209ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Drain current: 586A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 40V
Drain current: 586A
Type of transistor: N-MOSFET
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IR21531STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 67.67 грн |
BAS2103WE6433HTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.90 грн |
IRLR3636TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IPD50N03S4L06ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 25.01 грн |
IPP050N03LF2SAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 33.75 грн |
PVT312PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 118 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 343.32 грн |
100+ | 286.61 грн |
BTS118D |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
товару немає в наявності
В кошику
од. на суму грн.
PVT212S-TPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
750+ | 505.90 грн |
IRF7328TRPBFXTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.