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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1 INFINEON TECHNOLOGIES BSZ086P03NS3GATMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 52W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
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BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 INFINEON TECHNOLOGIES BSZ088N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
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BSC022N04LS6ATMA1 INFINEON TECHNOLOGIES BSC022N04LS6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Kind of package: reel; tape
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BSC022N04LSATMA1 BSC022N04LSATMA1 INFINEON TECHNOLOGIES BSC022N04LS-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
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AIHD04N60RATMA1 AIHD04N60RATMA1 INFINEON TECHNOLOGIES AIHD04N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
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AIHD04N60RFATMA1 AIHD04N60RFATMA1 INFINEON TECHNOLOGIES AIHD04N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 19ns
Turn-off time: 153ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
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CY7C1011DV33-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1011G30-12ZSXE INFINEON TECHNOLOGIES Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: in-tray
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CY7C1011G30-12ZSXET INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: reel; tape
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CY7C1019DV33-10BVXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: in-tray
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CY7C1019DV33-10VXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Case: SOJ32
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1020D-10ZSXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1020D-10ZSXIT INFINEON TECHNOLOGIES ?docID=49324 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1020DV33-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1020DV33_512_K_(32_K_x_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2f5bf37f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1021D-10VXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1021D-10ZSXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1021DV33-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: tube
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CY7C1021DV33-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1021DV33-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1041G-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
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CY7C1041G-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1041G-10ZSXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1041G18-15BVXI INFINEON TECHNOLOGIES download Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: in-tray
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CY7C1041G18-15BVXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: reel; tape
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CY7C1041G30-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
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CY7C1041G30-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1041G30-10ZSXA INFINEON TECHNOLOGIES Infineon-CY7C1041G_AUTOMOTIVE_4-MBIT_(256K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed752145879&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1041G30-10ZSXE INFINEON TECHNOLOGIES Infineon-CY7C1041G_AUTOMOTIVE_4-MBIT_(256K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed752145879&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
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TLE9350VSJXTMA1 INFINEON TECHNOLOGIES Infineon-TLE9350VSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eebccb1259 Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+48.69 грн
Мінімальне замовлення: 2500
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XMC1202Q024X0032ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
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CY62128ELL-45SXA INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
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CY62128ELL-45SXAT INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
товару немає в наявності
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CY62128ELL-55SXE INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
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CY62128ELL-55SXET INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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CY62128ELL-55ZAXE INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 4.5...5.5V DC
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CY62128ELL-55ZAXET INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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CY62128EV30LL-45ZAXIT INFINEON TECHNOLOGIES Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62128EV30LL-45SXIT INFINEON TECHNOLOGIES Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
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CY62128EV30LL-45ZXIT INFINEON TECHNOLOGIES Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
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SPB21N50C3ATMA1 INFINEON TECHNOLOGIES SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+98.21 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPT015N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPT015N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183ef5e9b67212b Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)
1800+137.82 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IPB044N15N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB044N15N5-DS-v02_00-EN.pdf?fileId=5546d462576f347501576ffd3e582757 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 123A; Idm: 696A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 123A
Pulsed drain current: 696A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1-dte.pdf
BSZ086P03NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 52W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
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BSZ088N03LSGATMA1 BSZ088N03LSG-DTE.pdf
BSZ088N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
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BSC022N04LS6ATMA1 BSC022N04LS6ATMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Kind of package: reel; tape
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BSC022N04LSATMA1 BSC022N04LS-dte.pdf
BSC022N04LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
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AIHD04N60RATMA1 AIHD04N60R.pdf
AIHD04N60RATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
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AIHD04N60RFATMA1 AIHD04N60RF.pdf
AIHD04N60RFATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 19ns
Turn-off time: 153ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
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CY7C1011DV33-10BVXI Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1011G30-12ZSXE Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: in-tray
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CY7C1011G30-12ZSXET download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: reel; tape
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CY7C1019DV33-10BVXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: in-tray
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CY7C1019DV33-10VXIT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Case: SOJ32
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1020D-10ZSXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1020D-10ZSXIT ?docID=49324
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1020DV33-10ZSXI Infineon-CY7C1020DV33_512_K_(32_K_x_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2f5bf37f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1021D-10VXIT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1021D-10ZSXIT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1021DV33-10VXI description Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: tube
товару немає в наявності
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CY7C1021DV33-10BVXI Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1021DV33-10VXIT Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1041G-10VXI Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
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CY7C1041G-10VXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1041G-10ZSXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1041G18-15BVXI download Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: in-tray
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CY7C1041G18-15BVXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: reel; tape
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CY7C1041G30-10VXI Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
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CY7C1041G30-10VXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
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CY7C1041G30-10ZSXA Infineon-CY7C1041G_AUTOMOTIVE_4-MBIT_(256K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed752145879&utm_source=cypress&utm_medium=referral&utm_campaign=202110
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1041G30-10ZSXE Infineon-CY7C1041G_AUTOMOTIVE_4-MBIT_(256K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed752145879&utm_source=cypress&utm_medium=referral&utm_campaign=202110
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
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TLE9350VSJXTMA1 Infineon-TLE9350VSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eebccb1259
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+48.69 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
XMC1202Q024X0032ABXUMA1 XMC1300-AB-EN.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
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CY62128ELL-45SXA Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
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CY62128ELL-45SXAT Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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CY62128ELL-55SXE Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
товару немає в наявності
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CY62128ELL-55SXET Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
товару немає в наявності
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CY62128ELL-55ZAXE Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 4.5...5.5V DC
товару немає в наявності
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CY62128ELL-55ZAXET Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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CY62128EV30LL-45ZAXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
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CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
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CY62128EV30LL-45ZXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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SPB21N50C3ATMA1 SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+98.21 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPT015N10NF2SATMA1 Infineon-IPT015N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183ef5e9b67212b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1800+137.82 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IPB044N15N5ATMA1 Infineon-IPB044N15N5-DS-v02_00-EN.pdf?fileId=5546d462576f347501576ffd3e582757
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 123A; Idm: 696A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 123A
Pulsed drain current: 696A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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