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S25FL512SAGBHI313 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL512SAGBHIA10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL512SAGBHIA13 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL512SAGBHIC10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL512SAGBHIC13 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL512SAGBHID10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL512SAGBHID13 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL512SAGBHIS10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL512SAGBHM210 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGBHM213 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL512SAGBHMA10 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGBHMC10 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGBHMC13 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL512SAGBHV210 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL512SAGBHV213 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S25FL512SAGBHV313 INFINEON TECHNOLOGIES S25FL512S_00.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S25FL512SAGBHVA10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL512SAGBHVB10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL512SAGBHVC13 INFINEON TECHNOLOGIES S25FL512S_00.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S25FL512SAGBHVD10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL512SAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFAG10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFB010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFBG10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFI013 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL512SAGMFIG10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL512SAGMFIG11 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
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BFP650FH6327 BFP650FH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E1A19995E11C&compId=BFP650FH6327-dte.pdf?ci_sign=96a77ad04f5d9683c812535acb39daba6b15d6a0 Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
на замовлення 1438 шт:
термін постачання 21-30 дні (днів)
21+20.66 грн
22+18.38 грн
25+17.50 грн
100+16.70 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
BFP650H6327 BFP650H6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E02B6516E11C&compId=BFP650H6327-DTE.pdf?ci_sign=8ceae5c6a61797b0972337077f9ade1e60abf56c Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
на замовлення 2573 шт:
термін постачання 21-30 дні (днів)
9+48.20 грн
13+32.29 грн
25+28.37 грн
34+28.05 грн
93+26.54 грн
100+25.50 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IPW60R060P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 48A; 164W; TO247-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 164W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 67nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 904 шт:
термін постачання 21-30 дні (днів)
30+299.54 грн
120+250.17 грн
Мінімальне замовлення: 30
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IPP60R360CFD7XKSA1 IPP60R360CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R360CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fc7b033f30d49 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 43W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 674mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 24A
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IPD70R600P7SAUMA1 IPD70R600P7SAUMA1 INFINEON TECHNOLOGIES IPD70R600P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
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IPD60R360P7SE8228AUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
2500+24.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPW60R045P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b490710f4aba Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 61A; 201W; TO247
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 61A
Power dissipation: 201W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
30+284.91 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BSO201SPHXUMA1 BSO201SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF58F3DF29DF1CC&compId=BSO201SPH-DTE.pdf?ci_sign=bd493f72922d454f140551e0cbd8277f6d58d784 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
On-state resistance: 20mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
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BSO203SPHXUMA1 BSO203SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA91611F5B4851CC&compId=BSO203SPHXUMA1-dte.pdf?ci_sign=f36b40706fda76bb40b78ac4bb21317193f2aadb Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
On-state resistance: 21mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
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BSO080P03SHXUMA1 BSO080P03SHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA914D705F5351CC&compId=BSO080P03SHXUMA1-DTE.PDF?ci_sign=070dfb264d8f488a2ab88956d2ea39533118f6c5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
On-state resistance: 8mΩ
Power dissipation: 1.79W
Gate-source voltage: ±25V
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BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 INFINEON TECHNOLOGIES BSO220N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSO303SPHXUMA1 BSO303SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9209F3CB13F1CC&compId=BSO303SPHXUMA1-dte.pdf?ci_sign=81198fd7aed0081e5b6b98687ef88223814de38a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.2A
On-state resistance: 21mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
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ICE3AR2280JZXKLA1 INFINEON TECHNOLOGIES Infineon-ICE3AR2280JZ-DS-v02_01-en.pdf?fileId=db3a3043284aacd801288a42141f2ad1 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; Ch: 1; DIP7; flyback; 800V
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Breakdown voltage: 800V
на замовлення 3950 шт:
термін постачання 21-30 дні (днів)
50+119.65 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IKW75N65EL5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Technology: Trench
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
30+364.96 грн
90+304.52 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IR2010PBF IR2010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -3...3A
Number of channels: 2
Mounting: THT
Case: DIP14
Kind of package: tube
Supply voltage: 10...20V DC
Voltage class: 200V
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
2+427.80 грн
3+357.28 грн
10+315.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2085STRPBF IR2085STRPBF INFINEON TECHNOLOGIES Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Voltage class: 100V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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AUIR2085STR AUIR2085STR INFINEON TECHNOLOGIES auir2085s.pdf?fileId=5546d462533600a4015355a82609133f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Voltage class: 100V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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IPB339N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2090615F680DF&compId=IPB339N20NM6ATMA1.pdf?ci_sign=ff02d125717856aa9e07bdaa43cee952aba2f373 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 15.9nC
Pulsed drain current: 156A
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IPP339N20NM6AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF23D71E2C740DF&compId=IPP339N20NM6AKSA1.pdf?ci_sign=4057157b92ec495c3abc4f63258d596f369be238 Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 15.9C
Pulsed drain current: 156A
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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 INFINEON TECHNOLOGIES IKB30N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 52ns
Turn-off time: 184ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 120A
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IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 INFINEON TECHNOLOGIES IKB30N65ES5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
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DD340N20SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE83D1EF993D1&compId=DD340N20S.pdf?ci_sign=f033c129c6fd04b413304b6a72af59500a21a2e1 Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
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IPP023N10N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP023N10N5-DS-v02_03-EN.pdf?fileId=5546d461454603990145d5a675f86494 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSC009NE2LS5IATMA1 BSC009NE2LS5IATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C228646CFFA11C&compId=BSC009NE2LS5I-DTE.pdf?ci_sign=25996d635d2d6fa2523eb92fe3ddad178a57577f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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IRS21864STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+119.65 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFH8201TRPBF IRFH8201TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBF9D0E9E15EA&compId=IRFH8201TRPBF.pdf?ci_sign=0fd357ad7988b3c8101109a2a30ddda219854d09 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 25V
Power dissipation: 156W
Drain current: 324A
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
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SIPC69SN60C3X2SA2 INFINEON TECHNOLOGIES Category: Transistors - Unclassified
Description: SIPC69SN60C3X2SA2
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
2000+557.77 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPF129N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF21940CFF3A0DF&compId=IPF129N20NM6ATMA1.pdf?ci_sign=5a3152a240c0ea7d65acde0ee8511386ec270159 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Power dissipation: 234W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 37nC
Pulsed drain current: 348A
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IPT129N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF25A7E7B8C80DF&compId=IPT129N20NM6ATMA1.pdf?ci_sign=30d35994a57117cdc9873c22186519f3c8963974 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Power dissipation: 234W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 37nC
Pulsed drain current: 348A
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IPT067N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF24A02318A40DF&compId=IPT067N20NM6ATMA1.pdf?ci_sign=fbaa8df17ce3a6283c04eb395687a5f77eaea2a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 137A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 548A
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IPF067N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF213CA379F60DF&compId=IPF067N20NM6ATMA1.pdf?ci_sign=f31c161fc43780799b4d4a3452fcf50711faf093 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 138A; Idm: 552A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 138A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 72nC
Pulsed drain current: 552A
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ISC130N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2650300C7C0DF&compId=ISC130N20NM6ATMA1.pdf?ci_sign=d4951248117a20627fae5e84001683ea5ab0346f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 88A; Idm: 352A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 242W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 352A
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ISC151N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF26935A115E0DF&compId=ISC151N20NM6ATMA1.pdf?ci_sign=2853389a1873421ef7b23eddc1cdd8f08a6cf58f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 74A; Idm: 296A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 200W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 15.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 31nC
Pulsed drain current: 296A
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S25FL512SAGBHI313 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL512SAGBHIA10 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL512SAGBHIA13 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL512SAGBHIC10 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL512SAGBHIC13 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL512SAGBHID10 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL512SAGBHID13 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL512SAGBHIS10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL512SAGBHM210
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGBHM213
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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В кошику  од. на суму  грн.
S25FL512SAGBHMA10
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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В кошику  од. на суму  грн.
S25FL512SAGBHMC10
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGBHMC13
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL512SAGBHV210 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL512SAGBHV213 download
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S25FL512SAGBHV313 S25FL512S_00.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S25FL512SAGBHVA10 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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В кошику  од. на суму  грн.
S25FL512SAGBHVB10 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL512SAGBHVC13 S25FL512S_00.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S25FL512SAGBHVD10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL512SAGMFA010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFAG10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFB010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFBG10 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFI013 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику  од. на суму  грн.
S25FL512SAGMFIG10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S25FL512SAGMFIG11 001-98284%20Rev%20U.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
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BFP650FH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E1A19995E11C&compId=BFP650FH6327-dte.pdf?ci_sign=96a77ad04f5d9683c812535acb39daba6b15d6a0
BFP650FH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
на замовлення 1438 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.66 грн
22+18.38 грн
25+17.50 грн
100+16.70 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
BFP650H6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E02B6516E11C&compId=BFP650H6327-DTE.pdf?ci_sign=8ceae5c6a61797b0972337077f9ade1e60abf56c
BFP650H6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
на замовлення 2573 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+48.20 грн
13+32.29 грн
25+28.37 грн
34+28.05 грн
93+26.54 грн
100+25.50 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IPW60R060P7XKSA1 Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 48A; 164W; TO247-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 164W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 67nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 904 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+299.54 грн
120+250.17 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPP60R360CFD7XKSA1 Infineon-IPP60R360CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fc7b033f30d49
IPP60R360CFD7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 43W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 674mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 24A
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IPD70R600P7SAUMA1 IPD70R600P7S.pdf
IPD70R600P7SAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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IPD60R360P7SE8228AUMA1 Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+24.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPW60R045P7XKSA1 Infineon-IPW60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b490710f4aba
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 61A; 201W; TO247
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 61A
Power dissipation: 201W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+284.91 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BSO201SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF58F3DF29DF1CC&compId=BSO201SPH-DTE.pdf?ci_sign=bd493f72922d454f140551e0cbd8277f6d58d784
BSO201SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
On-state resistance: 20mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.
BSO203SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA91611F5B4851CC&compId=BSO203SPHXUMA1-dte.pdf?ci_sign=f36b40706fda76bb40b78ac4bb21317193f2aadb
BSO203SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
On-state resistance: 21mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
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BSO080P03SHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA914D705F5351CC&compId=BSO080P03SHXUMA1-DTE.PDF?ci_sign=070dfb264d8f488a2ab88956d2ea39533118f6c5
BSO080P03SHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
On-state resistance: 8mΩ
Power dissipation: 1.79W
Gate-source voltage: ±25V
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BSO220N03MDGXUMA1 BSO220N03MDG-DTE.pdf
BSO220N03MDGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSO303SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9209F3CB13F1CC&compId=BSO303SPHXUMA1-dte.pdf?ci_sign=81198fd7aed0081e5b6b98687ef88223814de38a
BSO303SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.2A
On-state resistance: 21mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
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ICE3AR2280JZXKLA1 Infineon-ICE3AR2280JZ-DS-v02_01-en.pdf?fileId=db3a3043284aacd801288a42141f2ad1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; Ch: 1; DIP7; flyback; 800V
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Breakdown voltage: 800V
на замовлення 3950 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+119.65 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IKW75N65EL5XKSA1 Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Technology: Trench
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+364.96 грн
90+304.52 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IR2010PBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
IR2010PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -3...3A
Number of channels: 2
Mounting: THT
Case: DIP14
Kind of package: tube
Supply voltage: 10...20V DC
Voltage class: 200V
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+427.80 грн
3+357.28 грн
10+315.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2085STRPBF Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828
IR2085STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Voltage class: 100V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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AUIR2085STR auir2085s.pdf?fileId=5546d462533600a4015355a82609133f
AUIR2085STR
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Voltage class: 100V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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IPB339N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2090615F680DF&compId=IPB339N20NM6ATMA1.pdf?ci_sign=ff02d125717856aa9e07bdaa43cee952aba2f373
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 15.9nC
Pulsed drain current: 156A
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IPP339N20NM6AKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF23D71E2C740DF&compId=IPP339N20NM6AKSA1.pdf?ci_sign=4057157b92ec495c3abc4f63258d596f369be238
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 15.9C
Pulsed drain current: 156A
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IKB30N65EH5ATMA1 IKB30N65EH5.pdf
IKB30N65EH5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 52ns
Turn-off time: 184ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 120A
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IKB30N65ES5ATMA1 IKB30N65ES5.pdf
IKB30N65ES5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
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DD340N20SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE83D1EF993D1&compId=DD340N20S.pdf?ci_sign=f033c129c6fd04b413304b6a72af59500a21a2e1
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
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IPP023N10N5XKSA1 Infineon-IPP023N10N5-DS-v02_03-EN.pdf?fileId=5546d461454603990145d5a675f86494
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSC009NE2LS5IATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C228646CFFA11C&compId=BSC009NE2LS5I-DTE.pdf?ci_sign=25996d635d2d6fa2523eb92fe3ddad178a57577f
BSC009NE2LS5IATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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IRS21864STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+119.65 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFH8201TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBF9D0E9E15EA&compId=IRFH8201TRPBF.pdf?ci_sign=0fd357ad7988b3c8101109a2a30ddda219854d09
IRFH8201TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 25V
Power dissipation: 156W
Drain current: 324A
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
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SIPC69SN60C3X2SA2
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: SIPC69SN60C3X2SA2
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+557.77 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPF129N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF21940CFF3A0DF&compId=IPF129N20NM6ATMA1.pdf?ci_sign=5a3152a240c0ea7d65acde0ee8511386ec270159
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Power dissipation: 234W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 37nC
Pulsed drain current: 348A
товару немає в наявності
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IPT129N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF25A7E7B8C80DF&compId=IPT129N20NM6ATMA1.pdf?ci_sign=30d35994a57117cdc9873c22186519f3c8963974
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Power dissipation: 234W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 37nC
Pulsed drain current: 348A
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IPT067N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF24A02318A40DF&compId=IPT067N20NM6ATMA1.pdf?ci_sign=fbaa8df17ce3a6283c04eb395687a5f77eaea2a3
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 137A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 548A
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IPF067N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF213CA379F60DF&compId=IPF067N20NM6ATMA1.pdf?ci_sign=f31c161fc43780799b4d4a3452fcf50711faf093
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 138A; Idm: 552A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 138A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 72nC
Pulsed drain current: 552A
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ISC130N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2650300C7C0DF&compId=ISC130N20NM6ATMA1.pdf?ci_sign=d4951248117a20627fae5e84001683ea5ab0346f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 88A; Idm: 352A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 242W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 352A
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ISC151N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF26935A115E0DF&compId=ISC151N20NM6ATMA1.pdf?ci_sign=2853389a1873421ef7b23eddc1cdd8f08a6cf58f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 74A; Idm: 296A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 200W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 15.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 31nC
Pulsed drain current: 296A
товару немає в наявності
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