Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149364) > Сторінка 2477 з 2490

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IRS10752LTRPBF IRS10752LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCF227E0B1A745&compId=IRS10752ltrpbf.pdf?ci_sign=6a7c066eebb0ca10daf93a490ee1176958edf939 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Turn-on time: 225ns
Turn-off time: 255ns
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IPB339N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2090615F680DF&compId=IPB339N20NM6ATMA1.pdf?ci_sign=ff02d125717856aa9e07bdaa43cee952aba2f373 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel
Kind of channel: enhancement
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IPP339N20NM6AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF23D71E2C740DF&compId=IPP339N20NM6AKSA1.pdf?ci_sign=4057157b92ec495c3abc4f63258d596f369be238 Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: THT
Gate charge: 15.9C
Kind of package: tube
Kind of channel: enhancement
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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD6CE2BB7E5820&compId=IKB30N65EH5.pdf?ci_sign=eace35329b7f06d6bcbc499ad2a1ae3d0aff80ac Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Case: D2PAK
Kind of package: reel; tape
Mounting: SMD
Technology: TRENCHSTOP™ 5
Turn-on time: 52ns
Gate charge: 70nC
Turn-off time: 184ns
Gate-emitter voltage: ±20V
Collector current: 35A
Power dissipation: 94W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
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IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD73C566023820&compId=IKB30N65ES5.pdf?ci_sign=671f77607770fe9bac35150f66b692c60c114758 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Case: D2PAK
Kind of package: reel; tape
Mounting: SMD
Technology: TRENCHSTOP™ 5
Turn-on time: 29ns
Gate charge: 70nC
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Power dissipation: 94W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
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DD340N20SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE83D1EF993D1&compId=DD340N20S.pdf?ci_sign=f033c129c6fd04b413304b6a72af59500a21a2e1 Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
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IPP90R1K2C3XKSA2 INFINEON TECHNOLOGIES Infineon-IPP90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a89fe8085c04 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1795 шт:
термін постачання 21-30 дні (днів)
50+67.36 грн
Мінімальне замовлення: 50
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BSC030N04NSGATMA1 BSC030N04NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A0048075011C&compId=BSC030N04NSG-DTE.pdf?ci_sign=1cb149ca5d05eeeed2dc9b829e3e4037b61615c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
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IPP023N10N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP023N10N5-DS-v02_03-EN.pdf?fileId=5546d461454603990145d5a675f86494 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BSC009NE2LS5IATMA1 BSC009NE2LS5IATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C228646CFFA11C&compId=BSC009NE2LS5I-DTE.pdf?ci_sign=25996d635d2d6fa2523eb92fe3ddad178a57577f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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ICE5QR2280AZXKLA1
+1
 		ICE5QR2280AZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.4A
Frequency: 20kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 41/22W
Application: SMPS
Operating voltage: 10...25.5V DC
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IRS21864STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+118.51 грн
Мінімальне замовлення: 2500
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IRFH8201TRPBF IRFH8201TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBF9D0E9E15EA&compId=IRFH8201TRPBF.pdf?ci_sign=0fd357ad7988b3c8101109a2a30ddda219854d09 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 25V
Power dissipation: 156W
Drain current: 324A
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
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SIPC69SN60C3X2SA2 INFINEON TECHNOLOGIES Category: Transistors - Unclassified
Description: SIPC69SN60C3X2SA2
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
2000+548.23 грн
Мінімальне замовлення: 2000
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IPT059N15N3ATMA1 IPT059N15N3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC97DF0F24411C&compId=IPT059N15N3-DTE.pdf?ci_sign=66cd6e0cfb8b27ca5ca43a5281c03ffd44ab639a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhancement
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IPF129N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF21940CFF3A0DF&compId=IPF129N20NM6ATMA1.pdf?ci_sign=5a3152a240c0ea7d65acde0ee8511386ec270159 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 348A
Power dissipation: 234W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel
Kind of channel: enhancement
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IPT129N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF25A7E7B8C80DF&compId=IPT129N20NM6ATMA1.pdf?ci_sign=30d35994a57117cdc9873c22186519f3c8963974 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 348A
Power dissipation: 234W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel
Kind of channel: enhancement
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IPT067N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF24A02318A40DF&compId=IPT067N20NM6ATMA1.pdf?ci_sign=fbaa8df17ce3a6283c04eb395687a5f77eaea2a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 137A
Pulsed drain current: 548A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel
Kind of channel: enhancement
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IPF067N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF213CA379F60DF&compId=IPF067N20NM6ATMA1.pdf?ci_sign=f31c161fc43780799b4d4a3452fcf50711faf093 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 138A; Idm: 552A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 138A
Pulsed drain current: 552A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel
Kind of channel: enhancement
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ISC130N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2650300C7C0DF&compId=ISC130N20NM6ATMA1.pdf?ci_sign=d4951248117a20627fae5e84001683ea5ab0346f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 88A; Idm: 352A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Pulsed drain current: 352A
Power dissipation: 242W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel
Kind of channel: enhancement
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ISC151N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF26935A115E0DF&compId=ISC151N20NM6ATMA1.pdf?ci_sign=2853389a1873421ef7b23eddc1cdd8f08a6cf58f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 74A; Idm: 296A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 200W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 15.1mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel
Kind of channel: enhancement
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IPP095N20NM6AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2349188A240DF&compId=IPP095N20NM6AKSA1.pdf?ci_sign=c39c87967d4d89be8e059b3a1a08a71b22ad7dae Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 116A; Idm: 464A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 116A
Pulsed drain current: 464A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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IPP65R420CFDXKSA1 IPP65R420CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9C936F5631BF&compId=IPP65R420CFD-DTE.pdf?ci_sign=ec1102f97d877cc4e6b9cdb8edb0b54fd9d7f4af Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRFB23N15DPBF IRFB23N15DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B68EF1A6F5005056AB5A8F&compId=irfs23n15d.pdf?ci_sign=790a0ecb84f9f1b08112c5a3d15c1af785983808 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 23A; 3.8W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 23A
Power dissipation: 3.8W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
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BCW67CE6327 BCW67CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C52D8FFE996469&compId=BCW67B.pdf?ci_sign=bdbfe8f0672e4b7d88af7d57146c2b876a179314 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
на замовлення 347 шт:
термін постачання 21-30 дні (днів)
27+16.20 грн
41+9.66 грн
52+7.66 грн
100+6.74 грн
250+6.02 грн
255+3.66 грн
Мінімальне замовлення: 27
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TD280N16SOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9CF527A01D13D1&compId=TD280N16SOF.pdf?ci_sign=a475eed396f5bb164dc0e01ceba34f7331fb7c65 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 280A; BG-PB50SB-1; Ufmax: 1.77V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Max. load current: 280A
Mechanical mounting: screw
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TD280N18SOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AAB35434192D474A&compId=TT280N18SOF_TD280N18SOF.pdf?ci_sign=104c9ddc826d13294c4680f8a1319990f0a9f813 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 280A; BG-PB50SB-1; Ufmax: 1.77V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Max. load current: 280A
Mechanical mounting: screw
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IPP60R060P7 IPP60R060P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E29801E7FF4749&compId=IPP60R060P7.pdf?ci_sign=e1878468754d31d06f5fea24df11181436da83af Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB60R060P7ATMA1 IPB60R060P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89680FE3A9654F3D6&compId=IPB60R060P7.pdf?ci_sign=ce2fbf2f237547b81b51c17c17d79d3436fb6d82 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
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IPZA60R060P7XKSA1 IPZA60R060P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEC74B032C33D1&compId=IPZA60R060P7.pdf?ci_sign=310e8ddc118afb51589bfc4506d4483444c7a207 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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XMC4402F100F256ABXQMA1 XMC4402F100F256ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
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XMC4400F100K512ABXQSA1 XMC4400F100K512ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
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XMC4402F100K256ABXQSA1 XMC4402F100K256ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
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XMC4402F64K256ABXQSA1 XMC4402F64K256ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
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XMC4400F100F256ABXQSA1 XMC4400F100F256ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
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XMC4400F100F512ABXQMA1 XMC4400F100F512ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
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XMC4400F100K256ABXQSA1 XMC4400F100K256ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
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XMC4400F64F512ABXQMA1 XMC4400F64F512ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
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XMC4400F64K256ABXQSA1 XMC4400F64K256ABXQSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
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XMC4400F64F512BAXQMA1 INFINEON TECHNOLOGIES Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
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IPC70N04S5L-4R2 IPC70N04S5L-4R2 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
Technology: OptiMOS™ 5
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IPC70N04S5-4R6 IPC70N04S5-4R6 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 24.2nC
Technology: OptiMOS™ 5
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IAUC70N08S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPD70N03S4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 70A; 68W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 68W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+28.05 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CYPD3177-24LQXQ INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface; QFN24; 10mA; USB 1.1
Operating temperature: -40...105°C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Version: USB 1.1
DC supply current: 10mA
на замовлення 3582 шт:
термін постачання 21-30 дні (днів)
490+93.79 грн
Мінімальне замовлення: 490
В кошику  од. на суму  грн.
ISC045N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 63A; 30W; PG-TDSON-8; SMT
Kind of channel: enhancement
Mounting: SMD
Technology: MOSFET
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Electrical mounting: SMT
Gate charge: 13nC
On-state resistance: 4.5mΩ
Gate-source voltage: 20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 63A
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+11.51 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BCX71HE6327 BCX71HE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.33W
Collector-emitter voltage: 45V
Frequency: 250MHz
Polarisation: bipolar
на замовлення 6495 шт:
термін постачання 21-30 дні (днів)
60+7.16 грн
160+2.50 грн
180+2.25 грн
500+1.99 грн
535+1.74 грн
1475+1.65 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
FM24CL16B-DG INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: DFN8
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FM24CL16B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: DFN8
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ED6A827F8469&compId=BC817UE6327.pdf?ci_sign=273a25ffb9181e5f7966dc07fc73d775914d17ff Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Mounting: SMD
Collector-emitter voltage: 45V
Case: SC74
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 1W
Frequency: 170MHz
Polarisation: bipolar
на замовлення 136 шт:
термін постачання 21-30 дні (днів)
100+4.26 грн
102+3.89 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
S25FL064LABMFA010 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL064LABMFA011 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
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S25FL064LABMFA013 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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BSZ340N08NS3GATMA1 BSZ340N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4EB1EB22211C&compId=BSZ340N08NS3G-DTE.pdf?ci_sign=fcb9737eb5449cce02db625a02d11085b0a60560 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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CY7C1612KV18-360BZXC INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
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ITS428L2ATMA1 ITS428L2ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698AB8FC71B6469&compId=ITS428L2.pdf?ci_sign=78000ac0f0843a05110a1e62c49cd89d125daedb Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 5.8A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Supply voltage: 4.75...43V DC
Kind of output: N-Channel
On-state resistance: 50mΩ
на замовлення 2445 шт:
термін постачання 21-30 дні (днів)
3+167.97 грн
10+100.55 грн
26+95.01 грн
100+94.21 грн
250+91.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS5014SDAAUMA1 BTS5014SDAAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986790EA776469&compId=BTS5014SDA.pdf?ci_sign=2df677d362e5c63f61f5d0e01a54278934d5371d Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 6A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: High Current PROFET
Supply voltage: 5.5...20V DC
Kind of output: N-Channel
On-state resistance: 14mΩ
товару немає в наявності
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BTF50060-1TEA BTF50060-1TEA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697B223EDCF6469&compId=BTF50060-1TEA.pdf?ci_sign=e1be472a26e3d85aaa2541f4c3aea49b3d1f49e9 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 16.5A; Ch: 1; P-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 16.5A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: HITFET®
Supply voltage: 6...19V DC
Kind of output: P-Channel
On-state resistance: 6.8mΩ
товару немає в наявності
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BTS5016SDA BTS5016SDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
On-state resistance: 16mΩ
Number of channels: 1
Output current: 5.5A
Case: TO252-5
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: SMD
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IRS10752LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCF227E0B1A745&compId=IRS10752ltrpbf.pdf?ci_sign=6a7c066eebb0ca10daf93a490ee1176958edf939
IRS10752LTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Turn-on time: 225ns
Turn-off time: 255ns
товару немає в наявності
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IPB339N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2090615F680DF&compId=IPB339N20NM6ATMA1.pdf?ci_sign=ff02d125717856aa9e07bdaa43cee952aba2f373
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
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IPP339N20NM6AKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF23D71E2C740DF&compId=IPP339N20NM6AKSA1.pdf?ci_sign=4057157b92ec495c3abc4f63258d596f369be238
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: THT
Gate charge: 15.9C
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IKB30N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD6CE2BB7E5820&compId=IKB30N65EH5.pdf?ci_sign=eace35329b7f06d6bcbc499ad2a1ae3d0aff80ac
IKB30N65EH5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Case: D2PAK
Kind of package: reel; tape
Mounting: SMD
Technology: TRENCHSTOP™ 5
Turn-on time: 52ns
Gate charge: 70nC
Turn-off time: 184ns
Gate-emitter voltage: ±20V
Collector current: 35A
Power dissipation: 94W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
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IKB30N65ES5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD73C566023820&compId=IKB30N65ES5.pdf?ci_sign=671f77607770fe9bac35150f66b692c60c114758
IKB30N65ES5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Case: D2PAK
Kind of package: reel; tape
Mounting: SMD
Technology: TRENCHSTOP™ 5
Turn-on time: 29ns
Gate charge: 70nC
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Power dissipation: 94W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
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DD340N20SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE83D1EF993D1&compId=DD340N20S.pdf?ci_sign=f033c129c6fd04b413304b6a72af59500a21a2e1
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
товару немає в наявності
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IPP90R1K2C3XKSA2 Infineon-IPP90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a89fe8085c04
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1795 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+67.36 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSC030N04NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A0048075011C&compId=BSC030N04NSG-DTE.pdf?ci_sign=1cb149ca5d05eeeed2dc9b829e3e4037b61615c2
BSC030N04NSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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IPP023N10N5XKSA1 Infineon-IPP023N10N5-DS-v02_03-EN.pdf?fileId=5546d461454603990145d5a675f86494
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
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BSC009NE2LS5IATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C228646CFFA11C&compId=BSC009NE2LS5I-DTE.pdf?ci_sign=25996d635d2d6fa2523eb92fe3ddad178a57577f
BSC009NE2LS5IATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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ICE5QR2280AZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124
ICE5QR2280AZXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.4A
Frequency: 20kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 41/22W
Application: SMPS
Operating voltage: 10...25.5V DC
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IRS21864STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+118.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFH8201TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBF9D0E9E15EA&compId=IRFH8201TRPBF.pdf?ci_sign=0fd357ad7988b3c8101109a2a30ddda219854d09
IRFH8201TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 25V
Power dissipation: 156W
Drain current: 324A
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
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SIPC69SN60C3X2SA2
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: SIPC69SN60C3X2SA2
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+548.23 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT059N15N3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC97DF0F24411C&compId=IPT059N15N3-DTE.pdf?ci_sign=66cd6e0cfb8b27ca5ca43a5281c03ffd44ab639a
IPT059N15N3ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhancement
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IPF129N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF21940CFF3A0DF&compId=IPF129N20NM6ATMA1.pdf?ci_sign=5a3152a240c0ea7d65acde0ee8511386ec270159
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 348A
Power dissipation: 234W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel
Kind of channel: enhancement
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IPT129N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF25A7E7B8C80DF&compId=IPT129N20NM6ATMA1.pdf?ci_sign=30d35994a57117cdc9873c22186519f3c8963974
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 87A; Idm: 348A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 348A
Power dissipation: 234W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel
Kind of channel: enhancement
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IPT067N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF24A02318A40DF&compId=IPT067N20NM6ATMA1.pdf?ci_sign=fbaa8df17ce3a6283c04eb395687a5f77eaea2a3
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 137A
Pulsed drain current: 548A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel
Kind of channel: enhancement
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IPF067N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF213CA379F60DF&compId=IPF067N20NM6ATMA1.pdf?ci_sign=f31c161fc43780799b4d4a3452fcf50711faf093
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 138A; Idm: 552A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 138A
Pulsed drain current: 552A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel
Kind of channel: enhancement
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ISC130N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2650300C7C0DF&compId=ISC130N20NM6ATMA1.pdf?ci_sign=d4951248117a20627fae5e84001683ea5ab0346f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 88A; Idm: 352A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Pulsed drain current: 352A
Power dissipation: 242W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel
Kind of channel: enhancement
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ISC151N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF26935A115E0DF&compId=ISC151N20NM6ATMA1.pdf?ci_sign=2853389a1873421ef7b23eddc1cdd8f08a6cf58f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 74A; Idm: 296A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 200W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 15.1mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel
Kind of channel: enhancement
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IPP095N20NM6AKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2349188A240DF&compId=IPP095N20NM6AKSA1.pdf?ci_sign=c39c87967d4d89be8e059b3a1a08a71b22ad7dae
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 116A; Idm: 464A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 116A
Pulsed drain current: 464A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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IPP65R420CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9C936F5631BF&compId=IPP65R420CFD-DTE.pdf?ci_sign=ec1102f97d877cc4e6b9cdb8edb0b54fd9d7f4af
IPP65R420CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRFB23N15DPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B68EF1A6F5005056AB5A8F&compId=irfs23n15d.pdf?ci_sign=790a0ecb84f9f1b08112c5a3d15c1af785983808
IRFB23N15DPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 23A; 3.8W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 23A
Power dissipation: 3.8W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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BCW67CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C52D8FFE996469&compId=BCW67B.pdf?ci_sign=bdbfe8f0672e4b7d88af7d57146c2b876a179314
BCW67CE6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
на замовлення 347 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.20 грн
41+9.66 грн
52+7.66 грн
100+6.74 грн
250+6.02 грн
255+3.66 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
TD280N16SOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9CF527A01D13D1&compId=TD280N16SOF.pdf?ci_sign=a475eed396f5bb164dc0e01ceba34f7331fb7c65
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 280A; BG-PB50SB-1; Ufmax: 1.77V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Max. load current: 280A
Mechanical mounting: screw
товару немає в наявності
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TD280N18SOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AAB35434192D474A&compId=TT280N18SOF_TD280N18SOF.pdf?ci_sign=104c9ddc826d13294c4680f8a1319990f0a9f813
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 280A; BG-PB50SB-1; Ufmax: 1.77V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Max. load current: 280A
Mechanical mounting: screw
товару немає в наявності
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IPP60R060P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E29801E7FF4749&compId=IPP60R060P7.pdf?ci_sign=e1878468754d31d06f5fea24df11181436da83af
IPP60R060P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IPB60R060P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89680FE3A9654F3D6&compId=IPB60R060P7.pdf?ci_sign=ce2fbf2f237547b81b51c17c17d79d3436fb6d82
IPB60R060P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
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IPZA60R060P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEC74B032C33D1&compId=IPZA60R060P7.pdf?ci_sign=310e8ddc118afb51589bfc4506d4483444c7a207
IPZA60R060P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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XMC4402F100F256ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4402F100F256ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4400F100K512ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F100K512ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4402F100K256ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4402F100K256ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4402F64K256ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4402F64K256ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4400F100F256ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F100F256ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4400F100F512ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F100F512ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4400F100K256ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F100K256ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4400F64F512ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F64F512ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4400F64K256ABXQSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC211CB0D290FA8&compId=XMC4400-DTE.pdf?ci_sign=348a9a383dbde1e92c0668e3972b37b2629b1bc6
XMC4400F64K256ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4400F64F512BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
товару немає в наявності
В кошику  од. на суму  грн.
IPC70N04S5L-4R2
IPC70N04S5L-4R2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
Technology: OptiMOS™ 5
товару немає в наявності
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IPC70N04S5-4R6
IPC70N04S5-4R6
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 24.2nC
Technology: OptiMOS™ 5
товару немає в наявності
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IAUC70N08S5N074ATMA1 Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IPD70N03S4L04ATMA1 Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 70A; 68W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 68W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+28.05 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CYPD3177-24LQXQ Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; QFN24; 10mA; USB 1.1
Operating temperature: -40...105°C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Version: USB 1.1
DC supply current: 10mA
на замовлення 3582 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
490+93.79 грн
Мінімальне замовлення: 490
В кошику  од. на суму  грн.
ISC045N03L5SATMA1 Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 63A; 30W; PG-TDSON-8; SMT
Kind of channel: enhancement
Mounting: SMD
Technology: MOSFET
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Electrical mounting: SMT
Gate charge: 13nC
On-state resistance: 4.5mΩ
Gate-source voltage: 20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 63A
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+11.51 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BCX71HE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363
BCX71HE6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.33W
Collector-emitter voltage: 45V
Frequency: 250MHz
Polarisation: bipolar
на замовлення 6495 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
60+7.16 грн
160+2.50 грн
180+2.25 грн
500+1.99 грн
535+1.74 грн
1475+1.65 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
FM24CL16B-DG Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: DFN8
товару немає в наявності
В кошику  од. на суму  грн.
FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: DFN8
товару немає в наявності
В кошику  од. на суму  грн.
BC817SUE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ED6A827F8469&compId=BC817UE6327.pdf?ci_sign=273a25ffb9181e5f7966dc07fc73d775914d17ff
BC817SUE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Mounting: SMD
Collector-emitter voltage: 45V
Case: SC74
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 1W
Frequency: 170MHz
Polarisation: bipolar
на замовлення 136 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+4.26 грн
102+3.89 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
S25FL064LABMFA010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL064LABMFA011 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
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S25FL064LABMFA013 INFN-S-A0017271261-1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGMFA010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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BSZ340N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4EB1EB22211C&compId=BSZ340N08NS3G-DTE.pdf?ci_sign=fcb9737eb5449cce02db625a02d11085b0a60560
BSZ340N08NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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CY7C1612KV18-360BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
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ITS428L2ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698AB8FC71B6469&compId=ITS428L2.pdf?ci_sign=78000ac0f0843a05110a1e62c49cd89d125daedb
ITS428L2ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 5.8A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Supply voltage: 4.75...43V DC
Kind of output: N-Channel
On-state resistance: 50mΩ
на замовлення 2445 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+167.97 грн
10+100.55 грн
26+95.01 грн
100+94.21 грн
250+91.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS5014SDAAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986790EA776469&compId=BTS5014SDA.pdf?ci_sign=2df677d362e5c63f61f5d0e01a54278934d5371d
BTS5014SDAAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 6A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: High Current PROFET
Supply voltage: 5.5...20V DC
Kind of output: N-Channel
On-state resistance: 14mΩ
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BTF50060-1TEA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697B223EDCF6469&compId=BTF50060-1TEA.pdf?ci_sign=e1be472a26e3d85aaa2541f4c3aea49b3d1f49e9
BTF50060-1TEA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 16.5A; Ch: 1; P-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 16.5A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: HITFET®
Supply voltage: 6...19V DC
Kind of output: P-Channel
On-state resistance: 6.8mΩ
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BTS5016SDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35
BTS5016SDA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
On-state resistance: 16mΩ
Number of channels: 1
Output current: 5.5A
Case: TO252-5
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: SMD
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