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BSC009NE2LS5ATMA1 INFINEON TECHNOLOGIES BSC009NE2LS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC009NE2LS5IATMA1 BSC009NE2LS5IATMA1 INFINEON TECHNOLOGIES BSC009NE2LS5I-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC009NE2LSATMA1 BSC009NE2LSATMA1 INFINEON TECHNOLOGIES BSC009NE2LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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CY62137EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62137FV18LL-55BVXIT INFINEON TECHNOLOGIES Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...2.25V DC
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CY62137FV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62137FV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62137FV30LL-55ZSXET INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62137EV30LL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62137FV18LL-55BVXI INFINEON TECHNOLOGIES Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
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CY62137FV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62137FV30LL-45ZSXA INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_Automotive_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccfd7a4737&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62137FV30LL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62137FV30LL-55ZSXE INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_Automotive_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccfd7a4737&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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BSR202NL6327HTSA1 BSR202NL6327HTSA1 INFINEON TECHNOLOGIES BSR202NL6327HTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 2830 шт:
термін постачання 21-30 дні (днів)
16+29.35 грн
21+20.07 грн
50+15.11 грн
100+13.46 грн
250+11.48 грн
500+10.57 грн
Мінімальне замовлення: 16
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IRFI3205PBF IRFI3205PBF INFINEON TECHNOLOGIES irfi3205.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
3+201.90 грн
5+157.74 грн
10+139.57 грн
Мінімальне замовлення: 3
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SPA11N80C3XKSA2 INFINEON TECHNOLOGIES SPP_A11N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385b2fcc00ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
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TD330N16KOFHPSA2 TD330N16KOFHPSA2 INFINEON TECHNOLOGIES TD330N16KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
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TT330N16KOF TT330N16KOF INFINEON TECHNOLOGIES TT330N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPD60R180P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK; TO252
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
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IPD60R180P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK3
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
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IRLMS6802TRPBF IRLMS6802TRPBF INFINEON TECHNOLOGIES irlms6802pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BC857CWH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
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BC857CE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
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TLE493DW2B6A0HTSA1 INFINEON TECHNOLOGIES TLE493D-W2B6_v1.2_4-9-19.pdf Category: Hall Sensors
Description: Sensor: Hall; programmable; TSOP6; SMT; Temp: -40÷125°C; OUT: I2C
Type of sensor: Hall
Kind of sensor: programmable
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Output configuration: I2C
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+87.16 грн
Мінімальне замовлення: 3000
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IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
5+101.39 грн
50+27.67 грн
Мінімальне замовлення: 5
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IPB60R360P7ATMA1 IPB60R360P7ATMA1 INFINEON TECHNOLOGIES IPB60R360P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhancement
на замовлення 936 шт:
термін постачання 21-30 дні (днів)
6+82.72 грн
Мінімальне замовлення: 6
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IPD60R360P7ATMA1 IPD60R360P7ATMA1 INFINEON TECHNOLOGIES IPD60R360P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
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IPD60R360P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
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IPD60R360P7SE8228AUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK3
On-state resistance: 702mΩ
Mounting: SMD
Gate charge: 13nC
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IPD60R360PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
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IPN60R360P7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
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IPP60R360CFD7XKSA1 IPP60R360CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R360CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fc7b033f30d49 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 43W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 674mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 24A
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IPP60R360P7XKSA1 IPP60R360P7XKSA1 INFINEON TECHNOLOGIES IPP60R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IPAN60R360PFD7SXKSA1 IPAN60R360PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
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IPN60R360PFD7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 75000 шт:
термін постачання 21-30 дні (днів)
3000+36.47 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPLK60R360PFD7ATMA1 INFINEON TECHNOLOGIES Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+50.70 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPD047N03LF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.7mΩ
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IPD047N03LF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; PG-TO252-3
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 32nC
On-state resistance: 4.7mΩ
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
2000+21.35 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
CY14B108L-BA25XI INFINEON TECHNOLOGIES ?docID=50893 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B108N-BA25XI INFINEON TECHNOLOGIES Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B108N-BA25XIT INFINEON TECHNOLOGIES ?docID=50893 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B116N-BA25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; FBGA60; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: FBGA60
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B116N-BA25XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; FBGA60; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: FBGA60
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B101LA-BA25XI INFINEON TECHNOLOGIES Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B101LA-BA25XIT INFINEON TECHNOLOGIES ?docID=40139 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B104LA-BA25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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В кошику  од. на суму  грн.
CY14B104NA-BA25XI INFINEON TECHNOLOGIES infineon-cy14b104la-cy14b104na-4-mbit-512-k-8-256-k-16-nvsram-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ebf621933a8 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B104NA-BA25XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14V101LA-BA25XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14V101NA-BA25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14V101NA-BA25XIT INFINEON TECHNOLOGIES ?docID=45099 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14V104NA-BA25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14V104NA-BA25XIT INFINEON TECHNOLOGIES ?docID=45098 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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ESD5V3U2U03FH6327XTSA1 INFINEON TECHNOLOGIES esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; TSFP-3; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: TSFP-3
Max. off-state voltage: 5.3V
Kind of package: reel; tape
Version: ESD
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ESD5V5U5ULCE6327HTSA1 INFINEON TECHNOLOGIES ESD5V5U5ULC_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304331a821aa0131b36e85a20560 Category: Protection diodes - arrays
Description: Diode: TVS array; 6A; unidirectional; SC74-6; reel,tape
Type of diode: TVS array
Max. forward impulse current: 6A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74-6
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Application: Ethernet
Leakage current: 0.1µA
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ESD5V3U2U03LRHE6327XTMA1 INFINEON TECHNOLOGIES esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Category: Protection diodes - arrays
Description: Diode: TVS array; 3A; unidirectional,common anode; TSLP-3-7
Type of diode: TVS array
Max. forward impulse current: 3A
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: TSLP-3-7
Max. off-state voltage: 5.3V
Kind of package: reel; tape
Leakage current: 50nA
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BCX41E6327 BCX41E6327 INFINEON TECHNOLOGIES BCX41.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)
19+24.01 грн
27+15.86 грн
50+10.65 грн
100+8.92 грн
250+7.27 грн
500+6.36 грн
1000+5.70 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
ISC130N20NM6ATMA1 INFINEON TECHNOLOGIES ISC130N20NM6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 88A; Idm: 352A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Pulsed drain current: 352A
Power dissipation: 242W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel
Kind of channel: enhancement
Technology: OptiMOS™ 6
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IRFB52N15DPBF IRFB52N15DPBF INFINEON TECHNOLOGIES irfs52n15d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
4+130.74 грн
5+108.19 грн
10+105.71 грн
25+99.11 грн
Мінімальне замовлення: 4
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BSC009NE2LS5ATMA1 BSC009NE2LS5-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC009NE2LS5IATMA1 BSC009NE2LS5I-DTE.pdf
BSC009NE2LS5IATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC009NE2LSATMA1 BSC009NE2LS-DTE.pdf
BSC009NE2LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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CY62137EV30LL-45ZSXIT Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62137FV18LL-55BVXIT Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...2.25V DC
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CY62137FV30LL-45BVXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-45ZSXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-55ZSXET download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
CY62137EV30LL-45ZSXI Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV18LL-55BVXI Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-45BVXI Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-45ZSXA Infineon-CY62137FV30_MoBL_Automotive_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccfd7a4737&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-45ZSXI Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-55ZSXE Infineon-CY62137FV30_MoBL_Automotive_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccfd7a4737&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
BSR202NL6327HTSA1 BSR202NL6327HTSA1.pdf
BSR202NL6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 2830 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+29.35 грн
21+20.07 грн
50+15.11 грн
100+13.46 грн
250+11.48 грн
500+10.57 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
IRFI3205PBF description irfi3205.pdf
IRFI3205PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+201.90 грн
5+157.74 грн
10+139.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SPA11N80C3XKSA2 SPP_A11N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385b2fcc00ec
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
товару немає в наявності
В кошику  од. на суму  грн.
TD330N16KOFHPSA2 TD330N16KOF.pdf
TD330N16KOFHPSA2
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
товару немає в наявності
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TT330N16KOF TT330N16KOF.pdf
TT330N16KOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R180P7SAUMA1 Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK; TO252
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R180P7ATMA1 Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK3
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRLMS6802TRPBF irlms6802pbf.pdf
IRLMS6802TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику  од. на суму  грн.
BC857CWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BC857CE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
TLE493DW2B6A0HTSA1 TLE493D-W2B6_v1.2_4-9-19.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; programmable; TSOP6; SMT; Temp: -40÷125°C; OUT: I2C
Type of sensor: Hall
Kind of sensor: programmable
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Output configuration: I2C
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+87.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPA60R360P7SXKSA1 Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7
IPA60R360P7SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+101.39 грн
50+27.67 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPB60R360P7ATMA1 IPB60R360P7.pdf
IPB60R360P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhancement
на замовлення 936 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+82.72 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 IPD60R360P7.pdf
IPD60R360P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R360P7SAUMA1 Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R360P7SE8228AUMA1 Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK3
On-state resistance: 702mΩ
Mounting: SMD
Gate charge: 13nC
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
товару немає в наявності
В кошику  од. на суму  грн.
IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R360CFD7XKSA1 Infineon-IPP60R360CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fc7b033f30d49
IPP60R360CFD7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 43W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 674mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 24A
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R360P7XKSA1 IPP60R360P7.pdf
IPP60R360P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
IPAN60R360PFD7SXKSA1 Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741
IPAN60R360PFD7SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
товару немає в наявності
В кошику  од. на суму  грн.
IPN60R360PFD7SATMA1 Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 75000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+36.47 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPLK60R360PFD7ATMA1 Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+50.70 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPD047N03LF2SATMA1 Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.7mΩ
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IPD047N03LF2SATMA1 Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; PG-TO252-3
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 32nC
On-state resistance: 4.7mΩ
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+21.35 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
CY14B108L-BA25XI ?docID=50893
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B108N-BA25XI Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B108N-BA25XIT ?docID=50893
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B116N-BA25XI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; FBGA60; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: FBGA60
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B116N-BA25XIT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; FBGA60; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: FBGA60
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B101LA-BA25XI Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B101LA-BA25XIT ?docID=40139
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B104LA-BA25XI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B104NA-BA25XI infineon-cy14b104la-cy14b104na-4-mbit-512-k-8-256-k-16-nvsram-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ebf621933a8
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14B104NA-BA25XIT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14V101LA-BA25XIT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14V101NA-BA25XI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14V101NA-BA25XIT ?docID=45099
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14V104NA-BA25XI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Case: FBGA48
Kind of package: in-tray
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
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CY14V104NA-BA25XIT ?docID=45098
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Case: FBGA48
Kind of package: reel; tape
Kind of memory: NV SRAM
Kind of interface: parallel
Mounting: SMD
товару немає в наявності
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ESD5V3U2U03FH6327XTSA1 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
Виробник: INFINEON TECHNOLOGIES
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; TSFP-3; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: TSFP-3
Max. off-state voltage: 5.3V
Kind of package: reel; tape
Version: ESD
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ESD5V5U5ULCE6327HTSA1 ESD5V5U5ULC_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304331a821aa0131b36e85a20560
Виробник: INFINEON TECHNOLOGIES
Category: Protection diodes - arrays
Description: Diode: TVS array; 6A; unidirectional; SC74-6; reel,tape
Type of diode: TVS array
Max. forward impulse current: 6A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74-6
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Application: Ethernet
Leakage current: 0.1µA
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ESD5V3U2U03LRHE6327XTMA1 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
Виробник: INFINEON TECHNOLOGIES
Category: Protection diodes - arrays
Description: Diode: TVS array; 3A; unidirectional,common anode; TSLP-3-7
Type of diode: TVS array
Max. forward impulse current: 3A
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: TSLP-3-7
Max. off-state voltage: 5.3V
Kind of package: reel; tape
Leakage current: 50nA
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BCX41E6327 BCX41.pdf
BCX41E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+24.01 грн
27+15.86 грн
50+10.65 грн
100+8.92 грн
250+7.27 грн
500+6.36 грн
1000+5.70 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
ISC130N20NM6ATMA1 ISC130N20NM6ATMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 88A; Idm: 352A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Pulsed drain current: 352A
Power dissipation: 242W
Case: PG-TSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel
Kind of channel: enhancement
Technology: OptiMOS™ 6
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IRFB52N15DPBF irfs52n15d.pdf
IRFB52N15DPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+130.74 грн
5+108.19 грн
10+105.71 грн
25+99.11 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
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