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IRFH8325TRPBF IRFH8325TRPBF INFINEON TECHNOLOGIES irfh8325pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
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IHW30N135R3FKSA1 IHW30N135R3FKSA1 INFINEON TECHNOLOGIES DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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BAS3010A03WE6327HTSA1 BAS3010A03WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF4AFAA84D4469&compId=BAS3010A03WE6327HT.pdf?ci_sign=4f99da10d7fca7b937a3b709418a4250a6e2bdef Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
на замовлення 396 шт:
термін постачання 21-30 дні (днів)
17+24.76 грн
23+16.71 грн
50+12.41 грн
100+10.88 грн
122+7.36 грн
335+6.97 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BAT1804E6327HTSA1 BAT1804E6327HTSA1 INFINEON TECHNOLOGIES BAT18.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
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BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E48AE7C69A11C&compId=BSZ130N03MSG-DTE.pdf?ci_sign=f9ca3856ae6190f72d64bb628930d1076a5f9175 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPB029N06N3GATMA1 IPB029N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DB4723ACC11C&compId=IPB029N06N3G-DTE.pdf?ci_sign=5f066976eb9802fc0a5a6395d77568296435c78e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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IRFS4310ZTRLPBF IRFS4310ZTRLPBF INFINEON TECHNOLOGIES irfb4310zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IR2128SPBF IR2128SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
3+188.99 грн
8+122.61 грн
21+115.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR3607TRPBF IRFR3607TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C30289CA55F1A303005056AB0C4F&compId=irfr3607pbf.pdf?ci_sign=c768d620ee5343d069fa0755a84c6ac97a7b6a80 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TT320N18SOF TT320N18SOF INFINEON TECHNOLOGIES TT320N18SOF_TD320N18SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+7295.51 грн
В кошику  од. на суму  грн.
IDW40G65C5XKSA1 IDW40G65C5XKSA1 INFINEON TECHNOLOGIES IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
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CY7C2245KV18-450BZXI INFINEON TECHNOLOGIES Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
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IPA65R280E6XKSA1 IPA65R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2CF829F5191BF&compId=IPA65R280E6-DTE.pdf?ci_sign=df6262bcf2b5994d7d93a609776b6cb28dae31ed Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPI65R280E6XKSA1 IPI65R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB906C5082651BF&compId=IPI65R280E6-DTE.pdf?ci_sign=ab4d2af273f515dc14f003738d2594d1c4a055b3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
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IPP65R280E6XKSA1 IPP65R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9516FC6EB1BF&compId=IPP65R280E6-DTE.pdf?ci_sign=ab13db9f0175355a47c6d021969fb1b2df7d6eb9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB65R280E6ATMA1 IPB65R280E6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF300D338DF71BF&compId=IPB65R280E6-DTE.pdf?ci_sign=ae6c5b190a138856306f08169543d89672c5eac5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
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IPI65R280C6XKSA1 IPI65R280C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB9055E1BFE71BF&compId=IPI65R280C6-DTE.pdf?ci_sign=bc972129de1b10df604776009be2c84a81d985a0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
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BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES BSZ100N06LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
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BCR602XTSA1 BCR602XTSA1 INFINEON TECHNOLOGIES Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Protection: overheating OTP
Operating voltage: 8...60V DC
Output current: 10mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
Case: PG-SOT23-6
на замовлення 1586 шт:
термін постачання 21-30 дні (днів)
10+45.39 грн
11+35.02 грн
35+26.36 грн
95+24.91 грн
250+23.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BCR420U BCR420U INFINEON TECHNOLOGIES BCR420U.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
25+17.99 грн
30+14.56 грн
75+12.64 грн
195+11.95 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BSP78 BSP78 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869760D127D74469&compId=BSP78.pdf?ci_sign=a617bc4d5560c9afc8f0038f14af5aa2e51746cb Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Output voltage: 42V
Technology: HITFET®
Kind of integrated circuit: low-side
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)
3+200.54 грн
10+121.85 грн
13+73.57 грн
34+69.74 грн
1000+68.20 грн
2000+67.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS282ZE3230AKSA2 BTS282ZE3230AKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BDBC4CB4FAEB3D7&compId=BTS282Z.pdf?ci_sign=79ed465bde4ec9f1be59da5cdcf7bae313c59062 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Technology: TEMPFET®
Kind of integrated circuit: low-side
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+520.75 грн
3+332.59 грн
8+314.96 грн
В кошику  од. на суму  грн.
BTS5120-2EKA BTS5120-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987523C94E0469&compId=BTS5120-2EKA.pdf?ci_sign=2145b2d43fa43b21b36e2e06df885e96ad29b848 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.22Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
на замовлення 1873 шт:
термін постачання 21-30 дні (днів)
3+199.72 грн
10+121.08 грн
13+74.33 грн
34+69.74 грн
1000+67.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS282ZE3180AATMA2 BTS282ZE3180AATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BDBC4CB4FAEB3D7&compId=BTS282Z.pdf?ci_sign=79ed465bde4ec9f1be59da5cdcf7bae313c59062 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Technology: TEMPFET®
Kind of integrated circuit: low-side
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
1+495.17 грн
3+317.26 грн
8+300.40 грн
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BFN26E6327 BFN26E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD621C4D4F815EA&compId=BFN26.pdf?ci_sign=e3adbc099da16bcbcf1dd844a6cec75fe008b8ed Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
28+14.86 грн
35+11.27 грн
50+8.35 грн
100+7.20 грн
191+4.75 грн
527+4.44 грн
3000+4.37 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
IRFP4368PBFXKMA1 IRFP4368PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Drain-source voltage: 75V
Drain current: 350A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 380nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+480.32 грн
В кошику  од. на суму  грн.
CY62137EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62137FV18LL-55BVXIT INFINEON TECHNOLOGIES Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 1.65...2.25V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62137FV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62137FV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62137FV30LL-55ZSXET INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Operating temperature: -40...125°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62138EV30LL-45BVXIT INFINEON TECHNOLOGIES ?docID=45534 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Operating temperature: -40...85°C
Case: VFBGA36
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62138FV30LL-45ZAXAT INFINEON TECHNOLOGIES ?docID=49121 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62138FV30LL-45ZAXIT INFINEON TECHNOLOGIES ?docID=49121 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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IPD35N10S3L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
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SMBD914E6327HTSA1 SMBD914E6327HTSA1 INFINEON TECHNOLOGIES SMBD914E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Power dissipation: 0.37W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOT23
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+206.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25HS01GTDPBHI033 INFINEON TECHNOLOGIES en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25HS01GTDPMHI013 INFINEON TECHNOLOGIES en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S26HS01GTGABHA030 INFINEON TECHNOLOGIES Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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ITS711L1 ITS711L1 INFINEON TECHNOLOGIES ITS711L1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Output current: 1.7A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: DSO20
на замовлення 824 шт:
термін постачання 21-30 дні (днів)
1+446.48 грн
5+210.74 грн
12+199.25 грн
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IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 INFINEON TECHNOLOGIES IPN80R1K2P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 6.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
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DD100N16S DD100N16S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C84516482EE469&compId=DD100N16S.pdf?ci_sign=cddd1f5c7b5b531472b3ec26888b82e1ca2304e1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Case: BG-SB20-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.6V
Load current: 130A
Semiconductor structure: double series
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+1815.62 грн
2+1593.98 грн
12+1572.52 грн
В кошику  од. на суму  грн.
BC847BWH6327XTSA1 BC847BWH6327XTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
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IRFR9N20DTRPBF IRFR9N20DTRPBF INFINEON TECHNOLOGIES irfr9n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 200V
Drain current: 9.4A
Type of transistor: N-MOSFET
Power dissipation: 86W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
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IRF8113TRPBF IRF8113TRPBF INFINEON TECHNOLOGIES irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BC857BE6327 BC857BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783DF60124ED30259&compId=BC857B-DTE.pdf?ci_sign=ba25cefced3e9fb3bec3567afbe372972cd47a0a Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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IRF7351TRPBF IRF7351TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A0DE506CD3F1A303005056AB0C4F&compId=irf7351pbf.pdf?ci_sign=4edfec3e68a3b8645ed0cd18f9eb510a94e2a897 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 3598 шт:
термін постачання 21-30 дні (днів)
4+120.49 грн
10+76.63 грн
21+44.45 грн
57+42.15 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC016N06NSATMA1 BSC016N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C26917EEFD011C&compId=BSC016N06NS-DTE.pdf?ci_sign=f270d603e1689ebd89b70b26697c16daf5a93586 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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PVI5013RSPBF PVI5013RSPBF INFINEON TECHNOLOGIES pvi5013r.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Manufacturer series: PVI5013RPbF
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 8
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
2+206.32 грн
5+172.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS2982STRPBF IRS2982STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDCEC83A08A7E27&compId=IRS2982S-DTE.pdf?ci_sign=5a1aaaa5e1d0c0d792620fbba830a4b9369ab7e8 Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Case: PG-DSO-8
Operating voltage: 12.8...18V DC
Output current: 200...400mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: PWM
Kind of integrated circuit: LED driver; SMPS controller
Topology: flyback
Mounting: SMD
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IPB042N10N3GATMA1 IPB042N10N3GATMA1 INFINEON TECHNOLOGIES IPB042N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
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IDP30E120XKSA1 IDP30E120XKSA1 INFINEON TECHNOLOGIES IDP30E120XKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
2+232.73 грн
8+112.65 грн
22+106.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB025N08N3GATMA1 IPB025N08N3GATMA1 INFINEON TECHNOLOGIES IPB025N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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XMC4800 RELAX ETHERCAT KIT XMC4800 RELAX ETHERCAT KIT INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78 Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Kit contents: development board with XMCmicrocontroller; expansion board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
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IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCR108SH6327 BCR108SH6327 INFINEON TECHNOLOGIES BCR108WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Frequency: 170MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
на замовлення 3507 шт:
термін постачання 21-30 дні (днів)
57+7.35 грн
100+5.98 грн
174+5.21 грн
477+4.90 грн
3000+4.67 грн
Мінімальне замовлення: 57
В кошику  од. на суму  грн.
BCR135WH6327 BCR135WH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
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BCR192WH6327 BCR192WH6327 INFINEON TECHNOLOGIES BCR192.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 22kΩ
Mounting: SMD
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Case: SOT323
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BCR129E6327 BCR129E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
товару немає в наявності
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IRFH8325TRPBF irfh8325pbf.pdf
IRFH8325TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
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IHW30N135R3FKSA1 DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88
IHW30N135R3FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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BAS3010A03WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF4AFAA84D4469&compId=BAS3010A03WE6327HT.pdf?ci_sign=4f99da10d7fca7b937a3b709418a4250a6e2bdef
BAS3010A03WE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
на замовлення 396 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.76 грн
23+16.71 грн
50+12.41 грн
100+10.88 грн
122+7.36 грн
335+6.97 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BAT1804E6327HTSA1 BAT18.pdf
BAT1804E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
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BSZ130N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E48AE7C69A11C&compId=BSZ130N03MSG-DTE.pdf?ci_sign=f9ca3856ae6190f72d64bb628930d1076a5f9175
BSZ130N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPB029N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DB4723ACC11C&compId=IPB029N06N3G-DTE.pdf?ci_sign=5f066976eb9802fc0a5a6395d77568296435c78e
IPB029N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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IRFS4310ZTRLPBF irfb4310zpbf.pdf
IRFS4310ZTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IR2128SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3
IR2128SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+188.99 грн
8+122.61 грн
21+115.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR3607TRPBF pVersion=0046&contRep=ZT&docId=E221C30289CA55F1A303005056AB0C4F&compId=irfr3607pbf.pdf?ci_sign=c768d620ee5343d069fa0755a84c6ac97a7b6a80
IRFR3607TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TT320N18SOF TT320N18SOF_TD320N18SOF.pdf
TT320N18SOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+7295.51 грн
В кошику  од. на суму  грн.
IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
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CY7C2245KV18-450BZXI Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
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IPA65R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2CF829F5191BF&compId=IPA65R280E6-DTE.pdf?ci_sign=df6262bcf2b5994d7d93a609776b6cb28dae31ed
IPA65R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPI65R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB906C5082651BF&compId=IPI65R280E6-DTE.pdf?ci_sign=ab4d2af273f515dc14f003738d2594d1c4a055b3
IPI65R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
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IPP65R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9516FC6EB1BF&compId=IPP65R280E6-DTE.pdf?ci_sign=ab13db9f0175355a47c6d021969fb1b2df7d6eb9
IPP65R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB65R280E6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF300D338DF71BF&compId=IPB65R280E6-DTE.pdf?ci_sign=ae6c5b190a138856306f08169543d89672c5eac5
IPB65R280E6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
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IPI65R280C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB9055E1BFE71BF&compId=IPI65R280C6-DTE.pdf?ci_sign=bc972129de1b10df604776009be2c84a81d985a0
IPI65R280C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
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BSZ100N06LS3GATMA1 BSZ100N06LS3G-DTE.pdf
BSZ100N06LS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Protection: overheating OTP
Operating voltage: 8...60V DC
Output current: 10mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
Case: PG-SOT23-6
на замовлення 1586 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+45.39 грн
11+35.02 грн
35+26.36 грн
95+24.91 грн
250+23.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BCR420U BCR420U.pdf
BCR420U
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.99 грн
30+14.56 грн
75+12.64 грн
195+11.95 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BSP78 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869760D127D74469&compId=BSP78.pdf?ci_sign=a617bc4d5560c9afc8f0038f14af5aa2e51746cb
BSP78
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Output voltage: 42V
Technology: HITFET®
Kind of integrated circuit: low-side
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+200.54 грн
10+121.85 грн
13+73.57 грн
34+69.74 грн
1000+68.20 грн
2000+67.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS282ZE3230AKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BDBC4CB4FAEB3D7&compId=BTS282Z.pdf?ci_sign=79ed465bde4ec9f1be59da5cdcf7bae313c59062
BTS282ZE3230AKSA2
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Technology: TEMPFET®
Kind of integrated circuit: low-side
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+520.75 грн
3+332.59 грн
8+314.96 грн
В кошику  од. на суму  грн.
BTS5120-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987523C94E0469&compId=BTS5120-2EKA.pdf?ci_sign=2145b2d43fa43b21b36e2e06df885e96ad29b848
BTS5120-2EKA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.22Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
на замовлення 1873 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+199.72 грн
10+121.08 грн
13+74.33 грн
34+69.74 грн
1000+67.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS282ZE3180AATMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BDBC4CB4FAEB3D7&compId=BTS282Z.pdf?ci_sign=79ed465bde4ec9f1be59da5cdcf7bae313c59062
BTS282ZE3180AATMA2
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Technology: TEMPFET®
Kind of integrated circuit: low-side
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+495.17 грн
3+317.26 грн
8+300.40 грн
В кошику  од. на суму  грн.
BFN26E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD621C4D4F815EA&compId=BFN26.pdf?ci_sign=e3adbc099da16bcbcf1dd844a6cec75fe008b8ed
BFN26E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+14.86 грн
35+11.27 грн
50+8.35 грн
100+7.20 грн
191+4.75 грн
527+4.44 грн
3000+4.37 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
IRFP4368PBFXKMA1 Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015
IRFP4368PBFXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Drain-source voltage: 75V
Drain current: 350A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 380nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+480.32 грн
В кошику  од. на суму  грн.
CY62137EV30LL-45ZSXIT Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62137FV18LL-55BVXIT Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 1.65...2.25V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62137FV30LL-45BVXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62137FV30LL-45ZSXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62137FV30LL-55ZSXET download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Operating temperature: -40...125°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62138EV30LL-45BVXIT ?docID=45534
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Operating temperature: -40...85°C
Case: VFBGA36
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62138FV30LL-45ZAXAT ?docID=49121
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62138FV30LL-45ZAXIT ?docID=49121
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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IPD35N10S3L26ATMA1 Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
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SMBD914E6327HTSA1 SMBD914E6327HTSA1.pdf
SMBD914E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Power dissipation: 0.37W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOT23
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+206.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25HS01GTDPBHI033 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25HS01GTDPMHI013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S26HS01GTGABHA030 Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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ITS711L1 ITS711L1.pdf
ITS711L1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Output current: 1.7A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: DSO20
на замовлення 824 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+446.48 грн
5+210.74 грн
12+199.25 грн
В кошику  од. на суму  грн.
IPN80R1K2P7ATMA1 IPN80R1K2P7.pdf
IPN80R1K2P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 6.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
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DD100N16S pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C84516482EE469&compId=DD100N16S.pdf?ci_sign=cddd1f5c7b5b531472b3ec26888b82e1ca2304e1
DD100N16S
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Case: BG-SB20-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.6V
Load current: 130A
Semiconductor structure: double series
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1815.62 грн
2+1593.98 грн
12+1572.52 грн
В кошику  од. на суму  грн.
BC847BWH6327XTSA1 bc847_8_9_bc850.pdf
BC847BWH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
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IRFR9N20DTRPBF irfr9n20dpbf.pdf
IRFR9N20DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 200V
Drain current: 9.4A
Type of transistor: N-MOSFET
Power dissipation: 86W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
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IRF8113TRPBF description irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50
IRF8113TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BC857BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783DF60124ED30259&compId=BC857B-DTE.pdf?ci_sign=ba25cefced3e9fb3bec3567afbe372972cd47a0a
BC857BE6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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IRF7351TRPBF pVersion=0046&contRep=ZT&docId=E221A0DE506CD3F1A303005056AB0C4F&compId=irf7351pbf.pdf?ci_sign=4edfec3e68a3b8645ed0cd18f9eb510a94e2a897
IRF7351TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 3598 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+120.49 грн
10+76.63 грн
21+44.45 грн
57+42.15 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC016N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C26917EEFD011C&compId=BSC016N06NS-DTE.pdf?ci_sign=f270d603e1689ebd89b70b26697c16daf5a93586
BSC016N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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PVI5013RSPBF pvi5013r.pdf
PVI5013RSPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Manufacturer series: PVI5013RPbF
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 8
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+206.32 грн
5+172.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS2982STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDCEC83A08A7E27&compId=IRS2982S-DTE.pdf?ci_sign=5a1aaaa5e1d0c0d792620fbba830a4b9369ab7e8
IRS2982STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Case: PG-DSO-8
Operating voltage: 12.8...18V DC
Output current: 200...400mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: PWM
Kind of integrated circuit: LED driver; SMPS controller
Topology: flyback
Mounting: SMD
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IPB042N10N3GATMA1 IPB042N10N3G-DTE.pdf
IPB042N10N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
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IDP30E120XKSA1 IDP30E120XKSA1.pdf
IDP30E120XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+232.73 грн
8+112.65 грн
22+106.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB025N08N3GATMA1 IPB025N08N3G-DTE.pdf
IPB025N08N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IKD04N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0
IKD04N60RFATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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XMC4800 RELAX ETHERCAT KIT pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78
XMC4800 RELAX ETHERCAT KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Kit contents: development board with XMCmicrocontroller; expansion board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
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IPW60R070C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965
IPW60R070C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCR108SH6327 BCR108WH6327.pdf
BCR108SH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Frequency: 170MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
на замовлення 3507 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
57+7.35 грн
100+5.98 грн
174+5.21 грн
477+4.90 грн
3000+4.67 грн
Мінімальне замовлення: 57
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BCR135WH6327 bcr135.pdf
BCR135WH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT323
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
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BCR192WH6327 BCR192.pdf
BCR192WH6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 22kΩ
Mounting: SMD
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Case: SOT323
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BCR129E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf
BCR129E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
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