Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149363) > Сторінка 2475 з 2490

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CY15B004J-SXE INFINEON TECHNOLOGIES Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Interface: I2C
Type of integrated circuit: FRAM memory
Mounting: SMD
Case: SOIC8
Kind of memory: FRAM
Operating temperature: -40...125°C
Memory organisation: 512x8bit
Supply voltage: 3...3.6V DC
Memory: 4kb FRAM
Clock frequency: 3.4MHz
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CY15B004J-SXET INFINEON TECHNOLOGIES Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Interface: I2C
Kind of package: reel; tape
Type of integrated circuit: FRAM memory
Mounting: SMD
Case: SOIC8
Kind of memory: FRAM
Operating temperature: -40...125°C
Memory organisation: 512x8bit
Supply voltage: 3...3.6V DC
Memory: 4kb FRAM
Clock frequency: 3.4MHz
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CY15B004Q-SXET INFINEON TECHNOLOGIES CY15B004Q_RevC_6-4-19.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Interface: SPI
Kind of package: reel; tape
Type of integrated circuit: FRAM memory
Mounting: SMD
Case: SOIC8
Kind of memory: FRAM
Operating temperature: -40...125°C
Memory organisation: 512x8bit
Supply voltage: 3...3.6V DC
Memory: 4kb FRAM
Clock frequency: 16MHz
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CY15B016J-SXA INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: SOIC8
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CY15B016J-SXAT INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: SOIC8
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CY15B016J-SXET INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 2kx8bit
Case: SOIC8
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CY15B016Q-SXE INFINEON TECHNOLOGIES Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Case: SOIC8
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CY15B016Q-SXET INFINEON TECHNOLOGIES Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Case: SOIC8
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CY8C3866AXI-039 INFINEON TECHNOLOGIES Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Unclassified
Description: CY8C3866AXI-039
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
90+1773.44 грн
Мінімальне замовлення: 90
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CY8C3866PVI-021 INFINEON TECHNOLOGIES Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Unclassified
Description: CY8C3866PVI-021
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
30+1478.44 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BFP650FH6327 BFP650FH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E1A19995E11C&compId=BFP650FH6327-dte.pdf?ci_sign=96a77ad04f5d9683c812535acb39daba6b15d6a0 Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
на замовлення 1438 шт:
термін постачання 21-30 дні (днів)
21+20.46 грн
22+18.21 грн
25+17.34 грн
100+16.55 грн
Мінімальне замовлення: 21
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BFP650H6327 BFP650H6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E02B6516E11C&compId=BFP650H6327-DTE.pdf?ci_sign=8ceae5c6a61797b0972337077f9ade1e60abf56c Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
на замовлення 2573 шт:
термін постачання 21-30 дні (днів)
9+47.75 грн
13+31.99 грн
25+28.11 грн
34+27.79 грн
93+26.28 грн
100+25.26 грн
Мінімальне замовлення: 9
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PVT322S-TPBF INFINEON TECHNOLOGIES pvt322.pdf?fileId=5546d462533600a40153568427eb2965 INFN-S-A0002782763-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 750 шт:
термін постачання 21-30 дні (днів)
750+671.01 грн
Мінімальне замовлення: 750
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S25FL127SABMFV103 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 108MHz
Case: SOIC8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
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S25FL127SABNFI103 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Part status: Not recommended for new designs
Kind of interface: serial
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 108MHz
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
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S25FS128SAGMFI103 INFINEON TECHNOLOGIES Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 1.7...2V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Case: SOIC8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
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S25FS128SAGNFI103 INFINEON TECHNOLOGIES Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 1.7...2V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
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IRF7815TRPBF IRF7815TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221ABCB43F139F1A303005056AB0C4F&compId=irf7815pbf.pdf?ci_sign=38f5aecb8cc9f50903c245ba07a8c38492c46f1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.1A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
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IHW30N160R2 IHW30N160R2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89F50B445201E27&compId=IHW30N160R2-DTE.pdf?ci_sign=d57022543208ed2152b8ccd31cb17f99d32a9c07 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 30A; 312W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 30A
Power dissipation: 312W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Turn-off time: 675ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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IAUT300N08S5N011ATMA1 INFINEON TECHNOLOGIES infineon-iaut300n08s5n011-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1505A
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IPW60R060P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 48A; 164W; TO247-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 164W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 67nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 604 шт:
термін постачання 21-30 дні (днів)
30+295.86 грн
120+247.02 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPP60R360CFD7XKSA1 IPP60R360CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R360CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fc7b033f30d49 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 43W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 674mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 24A
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IDP30E65D2XKSA1 INFINEON TECHNOLOGIES Infineon-IDP30E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef86e3ec2 Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
50+69.91 грн
Мінімальне замовлення: 50
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IR2011PBF IR2011PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFA6A1F3A75EA&compId=IR2011SPBF.pdf?ci_sign=e00761d8966cabb8635a24bc3b6e98b6b2e00d6b description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Case: DIP8
Mounting: THT
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Topology: MOSFET half-bridge
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
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XMC4700 RELAX KIT XMC4700 RELAX KIT INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78 Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Application: building automation; CAV; motors; photovoltaics
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kind of architecture: Cortex M4
Kit contents: development board with XMCmicrocontroller
Kind of connector: pin strips; RJ45; USB B micro x2
Family: XMC4700
Components: XMC4700-F144
Number of add-on connectors: 1
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BCX70JE6327HTSA1 INFINEON TECHNOLOGIES BCW60%2C%20BCX70%20Rev2007.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 250
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
на замовлення 27000 шт:
термін постачання 21-30 дні (днів)
3000+2.62 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ITS41K0SMENHUMA1 INFINEON TECHNOLOGIES Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.8Ω
Active logical level: high
Operating temperature: -40...125°C
Supply voltage: 4.9...60V
Power dissipation: 1.7W
Integrated circuit features: thermal protection
Application: automotive industry
на замовлення 24000 шт:
термін постачання 21-30 дні (днів)
4000+47.06 грн
Мінімальне замовлення: 4000
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IRFH5301TRPBF IRFH5301TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B71727F19FF1A303005056AB0C4F&compId=irfh5301pbf.pdf?ci_sign=69f6e6f9e392415bb914073c39b2b8b923255e3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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ISC019N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 1.9mΩ
Power dissipation: 69W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: reel; tape
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CY62162G18-55BGXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel
Mounting: SMD
Case: PBGA119
Kind of package: in-tray
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.2V DC
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
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IPD70R600P7SAUMA1 IPD70R600P7SAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1A8EB92BC4259&compId=IPD70R600P7S.pdf?ci_sign=38d4920e97f3ae09cb414355f39e9edf603eef99 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
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IPD70R1K4CEAUMA1 IPD70R1K4CEAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4D44D75DC6143&compId=IPD70R1K4CE.pdf?ci_sign=8821a931a63b6311387b5b0483f346f3de769995 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.5nC
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IPD70R2K0CEAUMA1 IPD70R2K0CEAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4DCF24664E143&compId=IPD70R2K0CE.pdf?ci_sign=83b0084754032b021490f316431813b1ce1b99b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 7.8nC
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IPD60R360P7SE8228AUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
2500+24.21 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CY7C2263KV18-550BZXC INFINEON TECHNOLOGIES Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 550MHz
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CY7C2263KV18-550BZXI INFINEON TECHNOLOGIES Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 550MHz
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PVI5033RSPBF PVI5033RSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF1B78D4AC6745&compId=PVI5033RPBF.pdf?ci_sign=a03b8ddcd7d448ea104ed762f6d41a8ab801b2e5 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
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IRF7503TRPBF IRF7503TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A66A5A9519F1A303005056AB0C4F&compId=irf7503pbf.pdf?ci_sign=bdb7ae8ebb62044e85cce1427c39fefdef9eba5c Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRLH5030TRPBF IRLH5030TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22276CD53EF6AF1A303005056AB0C4F&compId=irlh5030pbf.pdf?ci_sign=b7d48380736f498925361d1458e068e499527d09 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Drain current: 13A
Drain-source voltage: 100V
Polarisation: unipolar
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PVI5033RS-TPBF PVI5033RS-TPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A7BF3637D60B474A&compId=PVI5033RS-TPBF.pdf?ci_sign=16aa6f3a4707dd6bdd9d721cc31e1eb390d8be94 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
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IPW60R041C6FKSA1 IPW60R041C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59527FBD16DF1BF&compId=IPW60R041C6-DTE.pdf?ci_sign=6837f4b5c1cab04482cc6edd814da7b3dad60443 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+1124.60 грн
3+987.27 грн
В кошику  од. на суму  грн.
IPW60R040C7XKSA1 IPW60R040C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59549836BA8F1BF&compId=IPW60R040C7-DTE.pdf?ci_sign=fe636652d7245e19873032756aa4eb8485fd9ced Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R041P6FKSA1 IPW60R041P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59547CA850A91BF&compId=IPW60R041P6-DTE.pdf?ci_sign=91a46ec4514d9fb6d80b53b249ca522f48eca87b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R045P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b490710f4aba Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 61A; 201W; TO247
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 61A
Power dissipation: 201W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
на замовлення 130 шт:
термін постачання 21-30 дні (днів)
30+373.45 грн
90+311.94 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IRF6613TRPBF IRF6613TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F68802DD922F1A303005056AB0C4F&compId=irf6613pbf.pdf?ci_sign=22b184a7d9530b239b01848c8503885fd8923f04 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPI60R165CPAKSA1 IPI60R165CPAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5942CBA0C6D51BF&compId=IPI60R165CP-DTE.pdf?ci_sign=b1f7c31ef7dd2366849413f79e61302e04761bf0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO262-3
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO262-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.165Ω
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 192W
Drain-source voltage: 600V
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BCR183E6327HTSA1 INFINEON TECHNOLOGIES bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 33000 шт:
термін постачання 21-30 дні (днів)
3000+2.77 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRMCK099M IRMCK099M INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEE284EE3A610A14&compId=IRMCK099M.pdf?ci_sign=d4535d60a185e86ad87e05d8abd4ab9f2db9cef4 Category: Motor and PWM drivers
Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Kind of integrated circuit: 3-phase motor controller; DMC
Operating voltage: 3...3.6V DC
Frequency: 1...20kHz
Clock frequency: 100MHz
Technology: iMOTION™
Case: QFN32
Type of integrated circuit: driver
Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM
Interface: I2C; JTAG; UART
Output current: 73.5mA
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TZ800N16KOFHPSA3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9F4B0BB93433D1&compId=TZ800N16KOF.pdf?ci_sign=4fef3bd6e82d14140de725aa0b92a332785e594f Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 819A; BG-PB70AT-1
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 35kA
Type of semiconductor module: thyristor
Case: BG-PB70AT-1
Semiconductor structure: single thyristor
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TZ810N22KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BDE481755C8D3D7&compId=TZ810N22KOF.pdf?ci_sign=221ee50a91657495d8f5c8a16e1489af3852a3bf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 819A; BG-PB70AT-1
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 39kA
Type of semiconductor module: thyristor
Case: BG-PB70AT-1
Semiconductor structure: single thyristor
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TZ800N18KOFHPSA3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEF0348A180469&compId=TZ800N18KOF.pdf?ci_sign=5c13d978dde9defebb6b2f3e9108ff2750635efb Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 819A; BG-PB70AT-1
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 35kA
Type of semiconductor module: thyristor
Case: BG-PB70AT-1
Semiconductor structure: single thyristor
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TZ860N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEF2474623E469&compId=TZ860N16KOF.pdf?ci_sign=1f95f8d7839100693ed4ea4075312c1df7a0cf1c Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 860A; BG-PB70AT-1
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate current: 250mA
Max. forward voltage: 1.38V
Load current: 860A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 46kA
Type of semiconductor module: thyristor
Case: BG-PB70AT-1
Semiconductor structure: single thyristor
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BSO110N03MSGXUMA1 BSO110N03MSGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F211A43A7CC11C&compId=BSO110N03MSG-DTE.pdf?ci_sign=e98e6964477fdd36746c158d1337fff9d86b6934 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ 3
Case: PG-DSO-8
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.1A
On-state resistance: 11mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
на замовлення 2488 шт:
термін постачання 21-30 дні (днів)
9+52.86 грн
12+35.71 грн
38+24.46 грн
105+23.12 грн
1000+22.25 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSO201SPHXUMA1 BSO201SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF58F3DF29DF1CC&compId=BSO201SPH-DTE.pdf?ci_sign=bd493f72922d454f140551e0cbd8277f6d58d784 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Case: PG-DSO-8
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
On-state resistance: 20mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
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BSO203PHXUMA1 BSO203PHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA915F81DAB191CC&compId=BSO203PHXUMA1-dte.pdf?ci_sign=38ed271d24bb707e96be43cb3cb20d02f55b30a9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Case: PG-DSO-8
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
On-state resistance: 21mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
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BSO203SPHXUMA1 BSO203SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA91611F5B4851CC&compId=BSO203SPHXUMA1-dte.pdf?ci_sign=f36b40706fda76bb40b78ac4bb21317193f2aadb Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Case: PG-DSO-8
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
On-state resistance: 21mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
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BSO033N03MSGXUMA1 BSO033N03MSGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F1D7BEDEADE11C&compId=BSO033N03MSG-dte.pdf?ci_sign=5e1efb88a7677ffd6bc07010da9d28e08bc4dde9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ 3
Case: PG-DSO-8
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 3.8mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
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BSO080P03SHXUMA1 BSO080P03SHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA914D705F5351CC&compId=BSO080P03SHXUMA1-DTE.PDF?ci_sign=070dfb264d8f488a2ab88956d2ea39533118f6c5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Case: PG-DSO-8
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
On-state resistance: 8mΩ
Power dissipation: 1.79W
Gate-source voltage: ±25V
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BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F219EF8F79E11C&compId=BSO220N03MDG-DTE.pdf?ci_sign=8f5103fd85f4c1519886753b9a4e03a2291b13e8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSO301SPHXUMA1 BSO301SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA920504157491CC&compId=BSO301SPHXUMA1-dte.pdf?ci_sign=ed7f73f3f0a6fd6bfeee1d5c5065c9159df1b205 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Case: PG-DSO-8
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
On-state resistance: 8mΩ
Power dissipation: 1.79W
Gate-source voltage: ±20V
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CY15B004J-SXE Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Interface: I2C
Type of integrated circuit: FRAM memory
Mounting: SMD
Case: SOIC8
Kind of memory: FRAM
Operating temperature: -40...125°C
Memory organisation: 512x8bit
Supply voltage: 3...3.6V DC
Memory: 4kb FRAM
Clock frequency: 3.4MHz
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CY15B004J-SXET Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Interface: I2C
Kind of package: reel; tape
Type of integrated circuit: FRAM memory
Mounting: SMD
Case: SOIC8
Kind of memory: FRAM
Operating temperature: -40...125°C
Memory organisation: 512x8bit
Supply voltage: 3...3.6V DC
Memory: 4kb FRAM
Clock frequency: 3.4MHz
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CY15B004Q-SXET CY15B004Q_RevC_6-4-19.pdf
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Interface: SPI
Kind of package: reel; tape
Type of integrated circuit: FRAM memory
Mounting: SMD
Case: SOIC8
Kind of memory: FRAM
Operating temperature: -40...125°C
Memory organisation: 512x8bit
Supply voltage: 3...3.6V DC
Memory: 4kb FRAM
Clock frequency: 16MHz
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CY15B016J-SXA download
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: SOIC8
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CY15B016J-SXAT download
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: SOIC8
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CY15B016J-SXET download
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 2kx8bit
Case: SOIC8
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CY15B016Q-SXE Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Case: SOIC8
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CY15B016Q-SXET Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Case: SOIC8
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CY8C3866AXI-039 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C3866AXI-039
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
90+1773.44 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
CY8C3866PVI-021 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C3866PVI-021
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+1478.44 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BFP650FH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E1A19995E11C&compId=BFP650FH6327-dte.pdf?ci_sign=96a77ad04f5d9683c812535acb39daba6b15d6a0
BFP650FH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
на замовлення 1438 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.46 грн
22+18.21 грн
25+17.34 грн
100+16.55 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
BFP650H6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E02B6516E11C&compId=BFP650H6327-DTE.pdf?ci_sign=8ceae5c6a61797b0972337077f9ade1e60abf56c
BFP650H6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
на замовлення 2573 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.75 грн
13+31.99 грн
25+28.11 грн
34+27.79 грн
93+26.28 грн
100+25.26 грн
Мінімальне замовлення: 9
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PVT322S-TPBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965 INFN-S-A0002782763-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 750 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
750+671.01 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
S25FL127SABMFV103 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 108MHz
Case: SOIC8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
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S25FL127SABNFI103 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Part status: Not recommended for new designs
Kind of interface: serial
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 108MHz
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
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S25FS128SAGMFI103 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 1.7...2V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Case: SOIC8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
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S25FS128SAGNFI103 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 1.7...2V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Case: WSON8
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
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IRF7815TRPBF pVersion=0046&contRep=ZT&docId=E221ABCB43F139F1A303005056AB0C4F&compId=irf7815pbf.pdf?ci_sign=38f5aecb8cc9f50903c245ba07a8c38492c46f1b
IRF7815TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.1A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
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IHW30N160R2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89F50B445201E27&compId=IHW30N160R2-DTE.pdf?ci_sign=d57022543208ed2152b8ccd31cb17f99d32a9c07
IHW30N160R2
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 30A; 312W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 30A
Power dissipation: 312W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Turn-off time: 675ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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IAUT300N08S5N011ATMA1 infineon-iaut300n08s5n011-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1505A
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IPW60R060P7XKSA1 Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 48A; 164W; TO247-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 164W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 67nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 604 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+295.86 грн
120+247.02 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPP60R360CFD7XKSA1 Infineon-IPP60R360CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fc7b033f30d49
IPP60R360CFD7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 43W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 674mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 24A
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IDP30E65D2XKSA1 Infineon-IDP30E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef86e3ec2
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+69.91 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IR2011PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFA6A1F3A75EA&compId=IR2011SPBF.pdf?ci_sign=e00761d8966cabb8635a24bc3b6e98b6b2e00d6b
IR2011PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Case: DIP8
Mounting: THT
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Topology: MOSFET half-bridge
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
товару немає в наявності
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XMC4700 RELAX KIT pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78
XMC4700 RELAX KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Application: building automation; CAV; motors; photovoltaics
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kind of architecture: Cortex M4
Kit contents: development board with XMCmicrocontroller
Kind of connector: pin strips; RJ45; USB B micro x2
Family: XMC4700
Components: XMC4700-F144
Number of add-on connectors: 1
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BCX70JE6327HTSA1 BCW60%2C%20BCX70%20Rev2007.pdf
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 250
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
на замовлення 27000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+2.62 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ITS41K0SMENHUMA1 Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.8Ω
Active logical level: high
Operating temperature: -40...125°C
Supply voltage: 4.9...60V
Power dissipation: 1.7W
Integrated circuit features: thermal protection
Application: automotive industry
на замовлення 24000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+47.06 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFH5301TRPBF pVersion=0046&contRep=ZT&docId=E221B71727F19FF1A303005056AB0C4F&compId=irfh5301pbf.pdf?ci_sign=69f6e6f9e392415bb914073c39b2b8b923255e3a
IRFH5301TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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ISC019N03L5SATMA1 Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 1.9mΩ
Power dissipation: 69W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CY62162G18-55BGXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel
Mounting: SMD
Case: PBGA119
Kind of package: in-tray
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.2V DC
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
товару немає в наявності
В кошику  од. на суму  грн.
IPD70R600P7SAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1A8EB92BC4259&compId=IPD70R600P7S.pdf?ci_sign=38d4920e97f3ae09cb414355f39e9edf603eef99
IPD70R600P7SAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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IPD70R1K4CEAUMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4D44D75DC6143&compId=IPD70R1K4CE.pdf?ci_sign=8821a931a63b6311387b5b0483f346f3de769995
IPD70R1K4CEAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.5nC
товару немає в наявності
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IPD70R2K0CEAUMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4DCF24664E143&compId=IPD70R2K0CE.pdf?ci_sign=83b0084754032b021490f316431813b1ce1b99b5
IPD70R2K0CEAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 7.8nC
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R360P7SE8228AUMA1 Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+24.21 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CY7C2263KV18-550BZXC Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 550MHz
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2263KV18-550BZXI Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 550MHz
товару немає в наявності
В кошику  од. на суму  грн.
PVI5033RSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF1B78D4AC6745&compId=PVI5033RPBF.pdf?ci_sign=a03b8ddcd7d448ea104ed762f6d41a8ab801b2e5
PVI5033RSPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
IRF7503TRPBF pVersion=0046&contRep=ZT&docId=E221A66A5A9519F1A303005056AB0C4F&compId=irf7503pbf.pdf?ci_sign=bdb7ae8ebb62044e85cce1427c39fefdef9eba5c
IRF7503TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRLH5030TRPBF pVersion=0046&contRep=ZT&docId=E22276CD53EF6AF1A303005056AB0C4F&compId=irlh5030pbf.pdf?ci_sign=b7d48380736f498925361d1458e068e499527d09
IRLH5030TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Drain current: 13A
Drain-source voltage: 100V
Polarisation: unipolar
товару немає в наявності
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PVI5033RS-TPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A7BF3637D60B474A&compId=PVI5033RS-TPBF.pdf?ci_sign=16aa6f3a4707dd6bdd9d721cc31e1eb390d8be94
PVI5033RS-TPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R041C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59527FBD16DF1BF&compId=IPW60R041C6-DTE.pdf?ci_sign=6837f4b5c1cab04482cc6edd814da7b3dad60443
IPW60R041C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1124.60 грн
3+987.27 грн
В кошику  од. на суму  грн.
IPW60R040C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59549836BA8F1BF&compId=IPW60R040C7-DTE.pdf?ci_sign=fe636652d7245e19873032756aa4eb8485fd9ced
IPW60R040C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R041P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59547CA850A91BF&compId=IPW60R041P6-DTE.pdf?ci_sign=91a46ec4514d9fb6d80b53b249ca522f48eca87b
IPW60R041P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IPW60R045P7XKSA1 Infineon-IPW60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b490710f4aba
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 61A; 201W; TO247
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 61A
Power dissipation: 201W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
на замовлення 130 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+373.45 грн
90+311.94 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IRF6613TRPBF pVersion=0046&contRep=ZT&docId=E21F68802DD922F1A303005056AB0C4F&compId=irf6613pbf.pdf?ci_sign=22b184a7d9530b239b01848c8503885fd8923f04
IRF6613TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
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IPI60R165CPAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5942CBA0C6D51BF&compId=IPI60R165CP-DTE.pdf?ci_sign=b1f7c31ef7dd2366849413f79e61302e04761bf0
IPI60R165CPAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO262-3
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO262-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.165Ω
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 192W
Drain-source voltage: 600V
товару немає в наявності
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BCR183E6327HTSA1 bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 33000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+2.77 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRMCK099M pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEE284EE3A610A14&compId=IRMCK099M.pdf?ci_sign=d4535d60a185e86ad87e05d8abd4ab9f2db9cef4
IRMCK099M
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Kind of integrated circuit: 3-phase motor controller; DMC
Operating voltage: 3...3.6V DC
Frequency: 1...20kHz
Clock frequency: 100MHz
Technology: iMOTION™
Case: QFN32
Type of integrated circuit: driver
Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM
Interface: I2C; JTAG; UART
Output current: 73.5mA
товару немає в наявності
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TZ800N16KOFHPSA3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9F4B0BB93433D1&compId=TZ800N16KOF.pdf?ci_sign=4fef3bd6e82d14140de725aa0b92a332785e594f
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 819A; BG-PB70AT-1
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 35kA
Type of semiconductor module: thyristor
Case: BG-PB70AT-1
Semiconductor structure: single thyristor
товару немає в наявності
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TZ810N22KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BDE481755C8D3D7&compId=TZ810N22KOF.pdf?ci_sign=221ee50a91657495d8f5c8a16e1489af3852a3bf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 819A; BG-PB70AT-1
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 39kA
Type of semiconductor module: thyristor
Case: BG-PB70AT-1
Semiconductor structure: single thyristor
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TZ800N18KOFHPSA3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEF0348A180469&compId=TZ800N18KOF.pdf?ci_sign=5c13d978dde9defebb6b2f3e9108ff2750635efb
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 819A; BG-PB70AT-1
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 35kA
Type of semiconductor module: thyristor
Case: BG-PB70AT-1
Semiconductor structure: single thyristor
товару немає в наявності
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TZ860N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEF2474623E469&compId=TZ860N16KOF.pdf?ci_sign=1f95f8d7839100693ed4ea4075312c1df7a0cf1c
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 860A; BG-PB70AT-1
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate current: 250mA
Max. forward voltage: 1.38V
Load current: 860A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 46kA
Type of semiconductor module: thyristor
Case: BG-PB70AT-1
Semiconductor structure: single thyristor
товару немає в наявності
В кошику  од. на суму  грн.
BSO110N03MSGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F211A43A7CC11C&compId=BSO110N03MSG-DTE.pdf?ci_sign=e98e6964477fdd36746c158d1337fff9d86b6934
BSO110N03MSGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ 3
Case: PG-DSO-8
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.1A
On-state resistance: 11mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
на замовлення 2488 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+52.86 грн
12+35.71 грн
38+24.46 грн
105+23.12 грн
1000+22.25 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSO201SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF58F3DF29DF1CC&compId=BSO201SPH-DTE.pdf?ci_sign=bd493f72922d454f140551e0cbd8277f6d58d784
BSO201SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Case: PG-DSO-8
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
On-state resistance: 20mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.
BSO203PHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA915F81DAB191CC&compId=BSO203PHXUMA1-dte.pdf?ci_sign=38ed271d24bb707e96be43cb3cb20d02f55b30a9
BSO203PHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Case: PG-DSO-8
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
On-state resistance: 21mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
товару немає в наявності
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BSO203SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA91611F5B4851CC&compId=BSO203SPHXUMA1-dte.pdf?ci_sign=f36b40706fda76bb40b78ac4bb21317193f2aadb
BSO203SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Case: PG-DSO-8
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
On-state resistance: 21mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
товару немає в наявності
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BSO033N03MSGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F1D7BEDEADE11C&compId=BSO033N03MSG-dte.pdf?ci_sign=5e1efb88a7677ffd6bc07010da9d28e08bc4dde9
BSO033N03MSGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ 3
Case: PG-DSO-8
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 3.8mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
BSO080P03SHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA914D705F5351CC&compId=BSO080P03SHXUMA1-DTE.PDF?ci_sign=070dfb264d8f488a2ab88956d2ea39533118f6c5
BSO080P03SHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Case: PG-DSO-8
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
On-state resistance: 8mΩ
Power dissipation: 1.79W
Gate-source voltage: ±25V
товару немає в наявності
В кошику  од. на суму  грн.
BSO220N03MDGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F219EF8F79E11C&compId=BSO220N03MDG-DTE.pdf?ci_sign=8f5103fd85f4c1519886753b9a4e03a2291b13e8
BSO220N03MDGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
BSO301SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA920504157491CC&compId=BSO301SPHXUMA1-dte.pdf?ci_sign=ed7f73f3f0a6fd6bfeee1d5c5065c9159df1b205
BSO301SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Technology: OptiMOS™ P
Case: PG-DSO-8
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
On-state resistance: 8mΩ
Power dissipation: 1.79W
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
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