Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149643) > Сторінка 2489 з 2495

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AUIRL7766M2TR AUIRL7766M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045A07B795AF1A6F5005056AB5A8F&compId=auirl7766m2.pdf?ci_sign=4c325d859c0e4ada8427c9bfb0a836e4c3900005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 62.5W
Features of semiconductor devices: logic level
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IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F672CDB9B16F1A303005056AB0C4F&compId=irf6216pbf.pdf?ci_sign=9ad0f60fd0f5dd2bab877d7a145bd99db3800a4b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
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IPF042N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Case: D2PAK-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 57nC
Power dissipation: 167W
Pulsed drain current: 556A
Technology: StrongIRFET™ 2
On-state resistance: 4.25mΩ
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IRF7749L1TRPBF IRF7749L1TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8D93D3E8D5EA&compId=IRF7749L1TRPBF.pdf?ci_sign=ac4cf3f56b24f673218007a1d83cc26fc9837f08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 3.3W
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.1mΩ
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IPT020N10N5ATMA1 INFINEON TECHNOLOGIES infineon-ipt020n10n5-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3979 шт:
термін постачання 21-30 дні (днів)
2000+177.32 грн
Мінімальне замовлення: 2000
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IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAED93866211C&compId=IPT020N10N3-DTE.pdf?ci_sign=7aae739c986093ff957dd2e9d4df66937580f02f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
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TLE42712GATMA1 TLE42712GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698BB0584C64469&compId=TLE4271-2G.pdf?ci_sign=7a8f05af902fbc92a2cda1d4ba88edc4035a1995 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Output current: 0.55A
Output voltage: 5V
Voltage drop: 0.35V
Input voltage: 6...40V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...150°C
на замовлення 931 шт:
термін постачання 21-30 дні (днів)
3+179.90 грн
10+123.09 грн
25+118.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPS70R600P7SAKMA1 INFINEON TECHNOLOGIES infineon-ips70r600p7s-ds-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 700V; 8.5A; 43.1W; IPAK,TO251; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 700V
Drain current: 8.5A
Power dissipation: 43.1W
Case: IPAK; TO251
Gate-source voltage: 16V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 10.5nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 1030 шт:
термін постачання 21-30 дні (днів)
75+19.63 грн
Мінімальне замовлення: 75
В кошику  од. на суму  грн.
IPI65R110CFDXKSA1 IPI65R110CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8F76640F2D1BF&compId=IPI65R110CFD-DTE.pdf?ci_sign=98f3c23ad83f574f23e99ec980f3f2d9b7bb4921 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.11Ω
Gate-source voltage: ±20V
Drain current: 31.2A
Power dissipation: 277.8W
Drain-source voltage: 650V
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IPA65R110CFDXKSA1 IPA65R110CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2BFD1810B71BF&compId=IPA65R110CFD-DTE.pdf?ci_sign=3fac4e548e5783cdb7532f4ef4e05f6a621d37d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
Kind of package: tube
On-state resistance: 0.11Ω
Gate-source voltage: ±20V
Drain current: 31.2A
Power dissipation: 34.7W
Drain-source voltage: 650V
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IPB65R110CFDATMA1 IPB65R110CFDATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2F00C05A131BF&compId=IPB65R110CFD-DTE.pdf?ci_sign=018f7b0d5ed077f0e2f964de094a95fef9f5d39f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
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IPB65R110CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 31.2A; 277.8W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 118nC
Electrical mounting: SMT
Application: automotive industry
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+281.47 грн
Мінімальне замовлення: 1000
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IPW65R110CFDFKSA2 INFINEON TECHNOLOGIES Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
30+319.34 грн
120+266.96 грн
Мінімальне замовлення: 30
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BSZ068N06NSATMA1 BSZ068N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1C1ABF3B811C&compId=BSZ068N06NS-DTE.pdf?ci_sign=fa3ecd472cbb88f8d166e7c20f1c2f8d458bfbec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BSB028N06NN3GXUMA1 BSB028N06NN3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C21169B999611C&compId=BSB028N06NN3G-DTE.pdf?ci_sign=9f74ee56527681bf6720ac86acff4685671d1a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSC028N06LS3GATMA1 BSC028N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28F27079C611C&compId=BSC028N06LS3G-DTE.pdf?ci_sign=bbe9fc3061cb470e92c25d928fd3834c48baac10 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPD038N06N3GATMA1 IPD038N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699276DED30A11C&compId=IPD038N06N3G-DTE.pdf?ci_sign=bd1362c96028dc62407e059fda18143201d9fbe8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPD088N06N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+30.64 грн
Мінімальне замовлення: 2500
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IPB031N08N5ATMA1 IPB031N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
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IPB036N12N3GATMA1 IPB036N12N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD3543DCCA11C&compId=IPB036N12N3G-DTE.pdf?ci_sign=f6e85fe1d433fdb0362bcc3083d1806c0c8f5354 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 180A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
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IPB038N12N3GATMA1 IPB038N12N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB68318E8811C&compId=IPB038N12N3G-DTE.pdf?ci_sign=1ce7670095e99e047c4caf194cc03ca588fb26fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
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IPB031NE7N3GATMA1 IPB031NE7N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
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IRLHM630TRPBF IRLHM630TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222776C4E3F4BF1A303005056AB0C4F&compId=irlhm630pbf.pdf?ci_sign=170c72500cf1dc0c0ea25a0be851ac421b66adf6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRF7862TRPBF IRF7862TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AD030E88B4F1A303005056AB0C4F&compId=irf7862pbf.pdf?ci_sign=84fcf72887f95ada0b37c5ae9daf8ac8c5825d63 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8321TRPBF IRFH8321TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCCBDA836655EA&compId=IRFH8321TRPBF.pdf?ci_sign=8af00b2029e222c13b14e3ae39a6c3a7baa0f4ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8325TRPBF IRFH8325TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BA7452A666F1A303005056AB0C4F&compId=irfh8325pbf.pdf?ci_sign=a76385c090eb515f3739add9718f7fb10d861c99 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913D1D61B311CC&compId=BSL308PEH6327XTSA1-DTE.pdf?ci_sign=2926dcc98cc2f16e4e3030d97715eb942d9c5794 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-TSOP-6
Kind of channel: enhancement
Version: ESD
Mounting: SMD
на замовлення 1942 шт:
термін постачання 21-30 дні (днів)
12+36.15 грн
18+23.26 грн
100+19.02 грн
400+16.47 грн
500+16.31 грн
Мінімальне замовлення: 12
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BSZ146N10LS5ATMA1 INFINEON TECHNOLOGIES infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 40A; 52W; SMT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: N
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 52W
Gate-source voltage: 20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+40.63 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPN50R1K4CEATMA1 INFINEON TECHNOLOGIES Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7 Category: Transistors - Unclassified
Description: IPN50R1K4CEATMA1
на замовлення 78000 шт:
термін постачання 21-30 дні (днів)
3000+13.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFP4310ZPBFXKMA1 INFINEON TECHNOLOGIES Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRS25752LTRPBF IRS25752LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCF6A24C542745&compId=IRS25752ltrpbf.pdf?ci_sign=cab2f992ac3e11dcc78a977da4ae432757a0c1b3 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 225ns
Turn-off time: 255ns
товару немає в наявності
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IRS2302SPBF IRS2302SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA7EA488D59D3D7&compId=IRS2302SPBF.pdf?ci_sign=3c1e65303fb8c7d19a0206b3213cfa65210e5079 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 650ns
Turn-off time: 200ns
Power: 625mW
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BSP317PH6327XTSA1 BSP317PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9219ACB51A51CC&compId=BSP317PH6327XTSA1-dte.pdf?ci_sign=a936721dcc5d1bbb427c56fd5eca3034a2449eee Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SIPMOS™
Drain-source voltage: -250V
Drain current: -0.43A
On-state resistance: 4Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 2429 шт:
термін постачання 21-30 дні (днів)
7+68.00 грн
10+42.44 грн
100+28.69 грн
250+24.78 грн
500+22.22 грн
1000+20.06 грн
2000+19.02 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IPD122N10N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2427 шт:
термін постачання 21-30 дні (днів)
6+82.63 грн
7+64.42 грн
10+59.47 грн
20+54.99 грн
50+49.87 грн
100+46.68 грн
200+43.88 грн
500+41.00 грн
1000+40.44 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPB65R190C7ATMA1 IPB65R190C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FB74953A71BF&compId=IPB65R190C7-DTE.pdf?ci_sign=de5cd77f6bd4c6f81d65e42a03bfc2b86172d885 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
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S29GL01GS12DHIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
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S29GL01GS12DHIV20 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
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S29GL01GS12DHVV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
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S29GL01GS12TFIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
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S29GL01GS12TFIV20 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
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S29GL01GS12TFVV20 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHBV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
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В кошику  од. на суму  грн.
S70GL02GS12FHBV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
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S70GL02GS12FHIV13 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
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S70GL02GS12FHIV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHIV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHVV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHVV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
на замовлення 410 шт:
термін постачання 21-30 дні (днів)
12+37.01 грн
15+27.34 грн
18+23.18 грн
100+12.63 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ISC240P06LMATMA1 INFINEON TECHNOLOGIES Infineon-ISC240P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4b2c536ec Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain current: 59A
Drain-source voltage: 60V
Power dissipation: 188W
Pulsed drain current: 236A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
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BFR35APE6327HTSA1 BFR35APE6327HTSA1 INFINEON TECHNOLOGIES INFNS22473-1.pdf?t.download=true&u=5oefqw Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Collector current: 45mA
Power dissipation: 0.28W
Collector-emitter voltage: 15V
Current gain: 70...140
Frequency: 5GHz
Polarisation: bipolar
Kind of package: reel; tape
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BSP135IXTSA1 INFINEON TECHNOLOGIES Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
1000+12.31 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IRF7842TRPBF IRF7842TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AC935A3E8EF1A303005056AB0C4F&compId=irf7842pbf.pdf?ci_sign=744a801cb6d39a17fc5323a2cd421e1967a6254c description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 2118 шт:
термін постачання 21-30 дні (днів)
5+98.99 грн
10+67.94 грн
25+55.95 грн
50+49.55 грн
100+44.76 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FF100R12W1T7EB11BPSA1 INFINEON TECHNOLOGIES FF100R12W1T7EB11BPSA1.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: for UPS; Inverter; motors; photovoltaics
Semiconductor structure: common emitter; transistor/transistor
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Case: AG-EASY1B
Topology: IGBT x2; NTC thermistor
товару немає в наявності
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PVI5013RSPBF PVI5013RSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF03423360A745&compId=pvi5013r.pdf?ci_sign=2896a267ac238fb8d92b31fc582bd7c80dbfef82 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Turn-off time: 25µs
Turn-on time: 5ms
Number of channels: 2
Insulation voltage: 3.75kV
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
2+215.19 грн
5+179.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB65R190CFDATMA1 IPB65R190CFDATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FCE3F865B1BF&compId=IPB65R190CFD-DTE.pdf?ci_sign=29fd38479d7b134b2403a81f7a99daed4ae2ab33 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
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IPB65R190CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 17.5A; 151W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 171mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Electrical mounting: SMT
Application: automotive industry
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
1000+166.13 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB65R190CFDATMA2 INFINEON TECHNOLOGIES DS_IPX65R190CFD__2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432fd0c54a012fded065a8309b Category: Transistors - Unclassified
Description: IPB65R190CFDATMA2
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+130.83 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB65R065C7ATMA1 IPB65R065C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EB2A880771BF&compId=IPB65R065C7-DTE.pdf?ci_sign=fea8ec4937df9f9dc590a5a6483e4546548d8ff6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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IRF7420TRPBF IRF7420TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
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AUIRL7766M2TR pVersion=0046&contRep=ZT&docId=E1C045A07B795AF1A6F5005056AB5A8F&compId=auirl7766m2.pdf?ci_sign=4c325d859c0e4ada8427c9bfb0a836e4c3900005
AUIRL7766M2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 62.5W
Features of semiconductor devices: logic level
товару немає в наявності
В кошику  од. на суму  грн.
IRF6216TRPBF pVersion=0046&contRep=ZT&docId=E21F672CDB9B16F1A303005056AB0C4F&compId=irf6216pbf.pdf?ci_sign=9ad0f60fd0f5dd2bab877d7a145bd99db3800a4b
IRF6216TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
товару немає в наявності
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IPF042N10NF2SATMA1 Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Case: D2PAK-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 57nC
Power dissipation: 167W
Pulsed drain current: 556A
Technology: StrongIRFET™ 2
On-state resistance: 4.25mΩ
товару немає в наявності
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IRF7749L1TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8D93D3E8D5EA&compId=IRF7749L1TRPBF.pdf?ci_sign=ac4cf3f56b24f673218007a1d83cc26fc9837f08
IRF7749L1TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 3.3W
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.1mΩ
товару немає в наявності
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IPT020N10N5ATMA1 infineon-ipt020n10n5-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3979 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+177.32 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT020N10N3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAED93866211C&compId=IPT020N10N3-DTE.pdf?ci_sign=7aae739c986093ff957dd2e9d4df66937580f02f
IPT020N10N3ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
товару немає в наявності
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TLE42712GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698BB0584C64469&compId=TLE4271-2G.pdf?ci_sign=7a8f05af902fbc92a2cda1d4ba88edc4035a1995
TLE42712GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Output current: 0.55A
Output voltage: 5V
Voltage drop: 0.35V
Input voltage: 6...40V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...150°C
на замовлення 931 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+179.90 грн
10+123.09 грн
25+118.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPS70R600P7SAKMA1 infineon-ips70r600p7s-ds-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 700V; 8.5A; 43.1W; IPAK,TO251; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 700V
Drain current: 8.5A
Power dissipation: 43.1W
Case: IPAK; TO251
Gate-source voltage: 16V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 10.5nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 1030 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
75+19.63 грн
Мінімальне замовлення: 75
В кошику  од. на суму  грн.
IPI65R110CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8F76640F2D1BF&compId=IPI65R110CFD-DTE.pdf?ci_sign=98f3c23ad83f574f23e99ec980f3f2d9b7bb4921
IPI65R110CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.11Ω
Gate-source voltage: ±20V
Drain current: 31.2A
Power dissipation: 277.8W
Drain-source voltage: 650V
товару немає в наявності
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IPA65R110CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2BFD1810B71BF&compId=IPA65R110CFD-DTE.pdf?ci_sign=3fac4e548e5783cdb7532f4ef4e05f6a621d37d7
IPA65R110CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
Kind of package: tube
On-state resistance: 0.11Ω
Gate-source voltage: ±20V
Drain current: 31.2A
Power dissipation: 34.7W
Drain-source voltage: 650V
товару немає в наявності
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IPB65R110CFDATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2F00C05A131BF&compId=IPB65R110CFD-DTE.pdf?ci_sign=018f7b0d5ed077f0e2f964de094a95fef9f5d39f
IPB65R110CFDATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
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IPB65R110CFDAATMA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 31.2A; 277.8W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 118nC
Electrical mounting: SMT
Application: automotive industry
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+281.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPW65R110CFDFKSA2 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+319.34 грн
120+266.96 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BSZ068N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1C1ABF3B811C&compId=BSZ068N06NS-DTE.pdf?ci_sign=fa3ecd472cbb88f8d166e7c20f1c2f8d458bfbec
BSZ068N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BSB028N06NN3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C21169B999611C&compId=BSB028N06NN3G-DTE.pdf?ci_sign=9f74ee56527681bf6720ac86acff4685671d1a87
BSB028N06NN3GXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSC028N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28F27079C611C&compId=BSC028N06LS3G-DTE.pdf?ci_sign=bbe9fc3061cb470e92c25d928fd3834c48baac10
BSC028N06LS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
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IPD038N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699276DED30A11C&compId=IPD038N06N3G-DTE.pdf?ci_sign=bd1362c96028dc62407e059fda18143201d9fbe8
IPD038N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
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IPD088N06N3GATMA1 Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+30.64 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPB031N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2
IPB031N08N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
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IPB036N12N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD3543DCCA11C&compId=IPB036N12N3G-DTE.pdf?ci_sign=f6e85fe1d433fdb0362bcc3083d1806c0c8f5354
IPB036N12N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 180A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
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IPB038N12N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB68318E8811C&compId=IPB038N12N3G-DTE.pdf?ci_sign=1ce7670095e99e047c4caf194cc03ca588fb26fa
IPB038N12N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
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IPB031NE7N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788
IPB031NE7N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
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IRLHM630TRPBF pVersion=0046&contRep=ZT&docId=E222776C4E3F4BF1A303005056AB0C4F&compId=irlhm630pbf.pdf?ci_sign=170c72500cf1dc0c0ea25a0be851ac421b66adf6
IRLHM630TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRF7862TRPBF pVersion=0046&contRep=ZT&docId=E221AD030E88B4F1A303005056AB0C4F&compId=irf7862pbf.pdf?ci_sign=84fcf72887f95ada0b37c5ae9daf8ac8c5825d63
IRF7862TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8321TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCCBDA836655EA&compId=IRFH8321TRPBF.pdf?ci_sign=8af00b2029e222c13b14e3ae39a6c3a7baa0f4ae
IRFH8321TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8325TRPBF pVersion=0046&contRep=ZT&docId=E221BA7452A666F1A303005056AB0C4F&compId=irfh8325pbf.pdf?ci_sign=a76385c090eb515f3739add9718f7fb10d861c99
IRFH8325TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSL308PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913D1D61B311CC&compId=BSL308PEH6327XTSA1-DTE.pdf?ci_sign=2926dcc98cc2f16e4e3030d97715eb942d9c5794
BSL308PEH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-TSOP-6
Kind of channel: enhancement
Version: ESD
Mounting: SMD
на замовлення 1942 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.15 грн
18+23.26 грн
100+19.02 грн
400+16.47 грн
500+16.31 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BSZ146N10LS5ATMA1 infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 40A; 52W; SMT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: N
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 52W
Gate-source voltage: 20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+40.63 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPN50R1K4CEATMA1 Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPN50R1K4CEATMA1
на замовлення 78000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+13.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFP4310ZPBFXKMA1 Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRS25752LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCF6A24C542745&compId=IRS25752ltrpbf.pdf?ci_sign=cab2f992ac3e11dcc78a977da4ae432757a0c1b3
IRS25752LTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 225ns
Turn-off time: 255ns
товару немає в наявності
В кошику  од. на суму  грн.
IRS2302SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA7EA488D59D3D7&compId=IRS2302SPBF.pdf?ci_sign=3c1e65303fb8c7d19a0206b3213cfa65210e5079
IRS2302SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 650ns
Turn-off time: 200ns
Power: 625mW
товару немає в наявності
В кошику  од. на суму  грн.
BSP317PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9219ACB51A51CC&compId=BSP317PH6327XTSA1-dte.pdf?ci_sign=a936721dcc5d1bbb427c56fd5eca3034a2449eee
BSP317PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SIPMOS™
Drain-source voltage: -250V
Drain current: -0.43A
On-state resistance: 4Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 2429 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+68.00 грн
10+42.44 грн
100+28.69 грн
250+24.78 грн
500+22.22 грн
1000+20.06 грн
2000+19.02 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IPD122N10N3GATMA1 Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2427 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+82.63 грн
7+64.42 грн
10+59.47 грн
20+54.99 грн
50+49.87 грн
100+46.68 грн
200+43.88 грн
500+41.00 грн
1000+40.44 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPB65R190C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FB74953A71BF&compId=IPB65R190C7-DTE.pdf?ci_sign=de5cd77f6bd4c6f81d65e42a03bfc2b86172d885
IPB65R190C7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS12DHIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS12DHIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS12DHVV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS12TFIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS12TFIV20 S29GL_128S_01GS_00.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS12TFVV20 S29GL_128S_01GS_00.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHBV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHBV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHIV13 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHIV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHIV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHVV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS12FHVV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
товару немає в наявності
В кошику  од. на суму  грн.
BAT6302VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645
BAT6302VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
на замовлення 410 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.01 грн
15+27.34 грн
18+23.18 грн
100+12.63 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ISC240P06LMATMA1 Infineon-ISC240P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4b2c536ec
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain current: 59A
Drain-source voltage: 60V
Power dissipation: 188W
Pulsed drain current: 236A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
товару немає в наявності
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BFR35APE6327HTSA1 INFNS22473-1.pdf?t.download=true&u=5oefqw
BFR35APE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Collector current: 45mA
Power dissipation: 0.28W
Collector-emitter voltage: 15V
Current gain: 70...140
Frequency: 5GHz
Polarisation: bipolar
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BSP135IXTSA1 Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+12.31 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IRF7842TRPBF description pVersion=0046&contRep=ZT&docId=E221AC935A3E8EF1A303005056AB0C4F&compId=irf7842pbf.pdf?ci_sign=744a801cb6d39a17fc5323a2cd421e1967a6254c
IRF7842TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 2118 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+98.99 грн
10+67.94 грн
25+55.95 грн
50+49.55 грн
100+44.76 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FF100R12W1T7EB11BPSA1 FF100R12W1T7EB11BPSA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: for UPS; Inverter; motors; photovoltaics
Semiconductor structure: common emitter; transistor/transistor
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Case: AG-EASY1B
Topology: IGBT x2; NTC thermistor
товару немає в наявності
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PVI5013RSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF03423360A745&compId=pvi5013r.pdf?ci_sign=2896a267ac238fb8d92b31fc582bd7c80dbfef82
PVI5013RSPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Turn-off time: 25µs
Turn-on time: 5ms
Number of channels: 2
Insulation voltage: 3.75kV
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+215.19 грн
5+179.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB65R190CFDATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FCE3F865B1BF&compId=IPB65R190CFD-DTE.pdf?ci_sign=29fd38479d7b134b2403a81f7a99daed4ae2ab33
IPB65R190CFDATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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IPB65R190CFDAATMA1 Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 17.5A; 151W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 171mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Electrical mounting: SMT
Application: automotive industry
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+166.13 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB65R190CFDATMA2 DS_IPX65R190CFD__2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432fd0c54a012fded065a8309b
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPB65R190CFDATMA2
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+130.83 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB65R065C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EB2A880771BF&compId=IPB65R065C7-DTE.pdf?ci_sign=fea8ec4937df9f9dc590a5a6483e4546548d8ff6
IPB65R065C7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF7420TRPBF pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5
IRF7420TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
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