Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149360) > Сторінка 2489 з 2490

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IGOT60R070D1AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE401B81A658BF&compId=IGOT60R070D1.pdf?ci_sign=83f481bff1714d6c3a176ec2ae803d094c7fa622 Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
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IGT60R070D1ATMA1 IGT60R070D1ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE420228EDB8BF&compId=IGT60R070D1.pdf?ci_sign=7e4b352780f0dc62839476384facd6fe5b07cb26 Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
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S25FL127SABMFB101 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Application: automotive
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IPB108N15N3GATMA1 IPB108N15N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC56AD8CC011C&compId=IPB108N15N3G-DTE.pdf?ci_sign=d73f39379b977e903d1a504cdde47a4b8f120224 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Kind of channel: enhancement
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ITS711L1 ITS711L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6A8FB46B515EA&compId=ITS711L1.pdf?ci_sign=10b7477323f83047679ef94230d193e5429d55bb Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Mounting: SMD
Case: DSO20
Output voltage: 2...4V
Technology: Industrial PROFET
Kind of output: N-Channel
Supply voltage: 5...34V DC
на замовлення 396 шт:
термін постачання 21-30 дні (днів)
1+461.27 грн
5+217.72 грн
12+205.85 грн
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BSP77E6433 BSP77E6433 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975EB63FE4A469&compId=BSP77E6433.pdf?ci_sign=6239ab778401a773ab18950fa653d6f33d6eda79 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Output voltage: 42V
Technology: HITFET®
Kind of output: N-Channel
на замовлення 3044 шт:
термін постачання 21-30 дні (днів)
3+192.69 грн
10+115.59 грн
15+64.13 грн
40+60.96 грн
2000+58.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA60R280P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3c00794f033f Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 12A; 24W; TO220FP; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 214mΩ
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
50+48.26 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA60R600P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 9nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
на замовлення 454 шт:
термін постачання 21-30 дні (днів)
50+24.90 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA90R500C3XKSA2 INFINEON TECHNOLOGIES Infineon-IPA90R500C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cd1d1b10fb6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
50+144.94 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA60R1K0CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 13nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
50+24.56 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA65R150CFDXKSA2 INFINEON TECHNOLOGIES Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 650V; 22.4A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 34.7W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 86nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
50+178.20 грн
200+148.84 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA65R400CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 400 шт:
термін постачання 21-30 дні (днів)
50+57.98 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA65R1K0CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384177bc470f7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 7.2A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 7.2A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 15.3nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 650 шт:
термін постачання 21-30 дні (днів)
50+41.44 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IRS2308STRPBF INFINEON TECHNOLOGIES irs2308.pdf?fileId=5546d462533600a40153567a98ac2804 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
2500+48.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ICE5AR0680AGXUMA1 ICE5AR0680AGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F285348280EA18&compId=ICE5xRxxxxAG.pdf?ci_sign=9c829b5b683ea7948ea94422704a94b91a4ceeb5 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 100kHz; Ch: 1; PG-DSO-12; flyback
Mounting: SMD
Power: 68/40/42W
Operating temperature: -40...140°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Number of channels: 1
Output current: 5.8A
Operating voltage: 10...25.5V DC
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 0.1MHz
Case: PG-DSO-12
Topology: flyback
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SPD02N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 2A; 42W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+37.26 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFH5250DTRPBF IRFH5250DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B69F73CEC8F1A303005056AB0C4F&compId=irfh5250dpbf.pdf?ci_sign=67286b03f8495111b6935f0dc7a1d7f61db34ce8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5250TRPBF IRFH5250TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B6BCA3E4D2F1A303005056AB0C4F&compId=irfh5250pbf.pdf?ci_sign=c6bcf5bec11fd72e95d8b9f2ed53f6c2dd09f369 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS71202EPAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D90B21488B38BF&compId=BTS71202EPA.pdf?ci_sign=1b14f49e1402ea6dfc2869df72244d3b06478d1c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Technology: PROFET™+2
Mounting: SMD
Case: PG-TSDSO-14
Kind of package: reel; tape
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...150°C
On-state resistance: 0.11Ω
Number of channels: 2
Output current: 2A
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
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IPD50P04P413ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Technology: OptiMOS® -P2
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -45A
Drain-source voltage: -40V
On-state resistance: 12.6mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Case: PG-TO252-3-313
Kind of channel: enhancement
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IPD50P04P413ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 40V; 50A; 58W; DPAK; automotive industry
Technology: MOSFET
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: P
Drain current: 50A
Drain-source voltage: 40V
Gate charge: 39nC
On-state resistance: 9.2mΩ
Gate-source voltage: 20V
Power dissipation: 58W
Application: automotive industry
Case: DPAK
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+40.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BAT1804E6327HTSA1 BAT1804E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A28F9F4B06F820&compId=BAT18.pdf?ci_sign=f4209ec2ed08fe629ebf970273ae2dbbb7d43482 Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Case: SOT23
Mounting: SMD
Max. forward voltage: 1.2V
Max. off-state voltage: 35V
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Type of diode: switching
Semiconductor structure: double series
Load current: 0.1A
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IRFU4510PBF IRFU4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8E7AC53835EA&compId=IRFU4510PBF.pdf?ci_sign=52b38537d55835881e2e9ee000aff0c490a07272 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Power dissipation: 143W
Technology: HEXFET®
на замовлення 588 шт:
термін постачання 21-30 дні (днів)
3+152.62 грн
5+95.01 грн
10+87.09 грн
16+60.17 грн
43+56.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF9393TRPBF IRF9393TRPBF INFINEON TECHNOLOGIES irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel
Drain current: -7.3A
Drain-source voltage: -30V
Polarisation: unipolar
Gate charge: 25nC
Type of transistor: P-MOSFET
On-state resistance: 19.4mΩ
Technology: HEXFET®
Power dissipation: 1.6W
Kind of channel: enhancement
Gate-source voltage: ±25V
на замовлення 461 шт:
термін постачання 21-30 дні (днів)
9+50.30 грн
12+34.28 грн
50+24.38 грн
54+17.42 грн
147+16.47 грн
Мінімальне замовлення: 9
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XMC1402F064X0200AAXUMA1 XMC1402F064X0200AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Kind of core: 32-bit
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IPB60R125C6ATMA1 IPB60R125C6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594126B59FFD1BF&compId=IPB60R125C6-DTE.pdf?ci_sign=81e827ead9db9d126ae967c1d00236c615806a73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
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XMC1402Q064X0200AAXUMA1 XMC1402Q064X0200AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Kind of core: 32-bit
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S25FL064LABMFM010 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL064LABMFM011 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Application: automotive
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S25FL064LABMFM013 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL064LABNFM010 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL128LAGMFM013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGNFM010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL128LAGNFM013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL512SDSMFM010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL512SDSMFM013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S29CD016J0MQFM010 INFINEON TECHNOLOGIES download Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 56MHz; PQFP80
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel burst
Operating voltage: 2.5...2.75V
Operating frequency: 56MHz
Case: PQFP80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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BSS306NH6327XTSA1 BSS306NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E3071C8DD10B&compId=BSS306NH6327XTSA1.pdf?ci_sign=b57fd6087103aae6c00284217bd6b1dfba4849d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 93mΩ
Drain current: 2.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Technology: OptiMOS™ 2
на замовлення 10594 шт:
термін постачання 21-30 дні (днів)
18+23.87 грн
27+14.73 грн
50+10.37 грн
100+8.95 грн
172+5.46 грн
472+5.15 грн
3000+4.99 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7CF1EC57F710B&compId=BSS214NH6327XTSA1.pdf?ci_sign=3d212ae0b6db65579c46b913210d28885837f077 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 3317 шт:
термін постачання 21-30 дні (днів)
24+17.90 грн
37+10.85 грн
53+7.52 грн
100+6.47 грн
250+5.37 грн
288+3.24 грн
791+3.06 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
S25HL512TDPNHB010 INFINEON TECHNOLOGIES infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf?fileId=8ac78c8c7f2a768a017f52f1a4242c57 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
Application: automotive
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S25HL512TDPNHI010 INFINEON TECHNOLOGIES 002-12345_rev-AF.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
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S25HL512TFANHI010 INFINEON TECHNOLOGIES Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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S25HL512TFANHM013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
Application: automotive
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S25HS512TFANHI010 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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S25HS512TFANHI013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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В кошику  од. на суму  грн.
BFP460H6327XTSA1 BFP460H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.23W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 4.5V
Current gain: 90...160
Frequency: 22GHz
Kind of transistor: RF
Technology: SIEGET™
Collector current: 70mA
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
20+21.32 грн
26+15.68 грн
29+13.93 грн
33+12.03 грн
50+10.93 грн
100+10.05 грн
105+8.95 грн
287+8.47 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRF7241TRPBF IRF7241TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7487F4D128F1A303005056AB0C4F&compId=irf7241pbf.pdf?ci_sign=3e6eac7109da8f3470ac2e7a87b7804a4856b55f description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 879 шт:
термін постачання 21-30 дні (днів)
8+56.27 грн
9+45.76 грн
10+41.41 грн
26+36.50 грн
71+34.44 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSS126IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Electrical mounting: SMT
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+4.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
S25FS064SAGNFB033 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Application: automotive
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Case: LGA8
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Memory: 64Mb FLASH
Operating frequency: 133MHz
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IRF7379TRPBF IRF7379TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A123F0D391F1A303005056AB0C4F&compId=irf7379pbf.pdf?ci_sign=dcd81d555b016082d976d83dba1dd0223787cfe8 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7329TRPBF INFINEON TECHNOLOGIES irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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AUIRF7379QTR AUIRF7379QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7464F1A6F5005056AB5A8F&compId=auirf7379q.pdf?ci_sign=b23d50bc5b963af5978a81d146c110175c10ccaf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
товару немає в наявності
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IRF7424TRPBF IRF7424TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2F20A319EF1A303005056AB0C4F&compId=irf7424pbf.pdf?ci_sign=2acda5302fc942a596720f26cd0040453e140573 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7425TRPBF IRF7425TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db pVersion=0046&contRep=ZT&docId=E221A30B2ACF36F1A303005056AB0C4F&compId=irf7425pbf.pdf?ci_sign=8154e3d2bf5a42d04cc55b32e63b7ef1350777ab Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 899 шт:
термін постачання 21-30 дні (днів)
6+83.56 грн
10+60.17 грн
18+52.25 грн
25+51.46 грн
50+47.50 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRF9317TRPBF IRF9317TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AF36409D0BF1A303005056AB0C4F&compId=irf9317pbf.pdf?ci_sign=8a0f5023cdbb5a2b9e43b14f674edeb990a3138a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
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IRF9388TRPBF INFINEON TECHNOLOGIES irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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IPL65R460CFDAUMA1 IPL65R460CFDAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB932CE4575B1BF&compId=IPL65R460CFD-DTE.pdf?ci_sign=d4d0007d0996f627373bb3ac4b85d887a9a79876 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
товару немає в наявності
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XMC4800E196F1536AAXQMA1 XMC4800E196F1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
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XMC4800E196K1536AAXQMA1 XMC4800E196K1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Kind of core: 32-bit
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BSB012NE2LXIXUMA1 BSB012NE2LXIXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D59F589818A11C&compId=BSB012NE2LXI-DTE.pdf?ci_sign=b06e7e426630df7168b8da6aeb6903e969bd1009 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 1.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 170A
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IGOT60R070D1AUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE401B81A658BF&compId=IGOT60R070D1.pdf?ci_sign=83f481bff1714d6c3a176ec2ae803d094c7fa622
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
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IGT60R070D1ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE420228EDB8BF&compId=IGT60R070D1.pdf?ci_sign=7e4b352780f0dc62839476384facd6fe5b07cb26
IGT60R070D1ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
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S25FL127SABMFB101 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Application: automotive
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IPB108N15N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC56AD8CC011C&compId=IPB108N15N3G-DTE.pdf?ci_sign=d73f39379b977e903d1a504cdde47a4b8f120224
IPB108N15N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Kind of channel: enhancement
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ITS711L1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6A8FB46B515EA&compId=ITS711L1.pdf?ci_sign=10b7477323f83047679ef94230d193e5429d55bb
ITS711L1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Mounting: SMD
Case: DSO20
Output voltage: 2...4V
Technology: Industrial PROFET
Kind of output: N-Channel
Supply voltage: 5...34V DC
на замовлення 396 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+461.27 грн
5+217.72 грн
12+205.85 грн
В кошику  од. на суму  грн.
BSP77E6433 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975EB63FE4A469&compId=BSP77E6433.pdf?ci_sign=6239ab778401a773ab18950fa653d6f33d6eda79
BSP77E6433
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Output voltage: 42V
Technology: HITFET®
Kind of output: N-Channel
на замовлення 3044 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+192.69 грн
10+115.59 грн
15+64.13 грн
40+60.96 грн
2000+58.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA60R280P7SXKSA1 Infineon-IPA60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3c00794f033f
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 12A; 24W; TO220FP; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 214mΩ
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+48.26 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA60R600P7SXKSA1 Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 9nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
на замовлення 454 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+24.90 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA90R500C3XKSA2 Infineon-IPA90R500C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cd1d1b10fb6
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+144.94 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA60R1K0CEXKSA1 Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 13nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+24.56 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA65R150CFDXKSA2 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 650V; 22.4A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 34.7W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 86nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+178.20 грн
200+148.84 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA65R400CEXKSA1 Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 400 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+57.98 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPA65R1K0CEXKSA1 Infineon-IPA65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384177bc470f7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 7.2A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 7.2A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 15.3nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 650 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+41.44 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IRS2308STRPBF irs2308.pdf?fileId=5546d462533600a40153567a98ac2804
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+48.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ICE5AR0680AGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F285348280EA18&compId=ICE5xRxxxxAG.pdf?ci_sign=9c829b5b683ea7948ea94422704a94b91a4ceeb5
ICE5AR0680AGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 100kHz; Ch: 1; PG-DSO-12; flyback
Mounting: SMD
Power: 68/40/42W
Operating temperature: -40...140°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Number of channels: 1
Output current: 5.8A
Operating voltage: 10...25.5V DC
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 0.1MHz
Case: PG-DSO-12
Topology: flyback
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SPD02N80C3ATMA1 Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 2A; 42W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+37.26 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFH5250DTRPBF pVersion=0046&contRep=ZT&docId=E221B69F73CEC8F1A303005056AB0C4F&compId=irfh5250dpbf.pdf?ci_sign=67286b03f8495111b6935f0dc7a1d7f61db34ce8
IRFH5250DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5250TRPBF pVersion=0046&contRep=ZT&docId=E221B6BCA3E4D2F1A303005056AB0C4F&compId=irfh5250pbf.pdf?ci_sign=c6bcf5bec11fd72e95d8b9f2ed53f6c2dd09f369
IRFH5250TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS71202EPAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D90B21488B38BF&compId=BTS71202EPA.pdf?ci_sign=1b14f49e1402ea6dfc2869df72244d3b06478d1c
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Technology: PROFET™+2
Mounting: SMD
Case: PG-TSDSO-14
Kind of package: reel; tape
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...150°C
On-state resistance: 0.11Ω
Number of channels: 2
Output current: 2A
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
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IPD50P04P413ATMA1 Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Technology: OptiMOS® -P2
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -45A
Drain-source voltage: -40V
On-state resistance: 12.6mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Case: PG-TO252-3-313
Kind of channel: enhancement
товару немає в наявності
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IPD50P04P413ATMA2 Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 40V; 50A; 58W; DPAK; automotive industry
Technology: MOSFET
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: P
Drain current: 50A
Drain-source voltage: 40V
Gate charge: 39nC
On-state resistance: 9.2mΩ
Gate-source voltage: 20V
Power dissipation: 58W
Application: automotive industry
Case: DPAK
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+40.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BAT1804E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A28F9F4B06F820&compId=BAT18.pdf?ci_sign=f4209ec2ed08fe629ebf970273ae2dbbb7d43482
BAT1804E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Case: SOT23
Mounting: SMD
Max. forward voltage: 1.2V
Max. off-state voltage: 35V
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Type of diode: switching
Semiconductor structure: double series
Load current: 0.1A
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IRFU4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8E7AC53835EA&compId=IRFU4510PBF.pdf?ci_sign=52b38537d55835881e2e9ee000aff0c490a07272
IRFU4510PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Power dissipation: 143W
Technology: HEXFET®
на замовлення 588 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+152.62 грн
5+95.01 грн
10+87.09 грн
16+60.17 грн
43+56.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF9393TRPBF irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3
IRF9393TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel
Drain current: -7.3A
Drain-source voltage: -30V
Polarisation: unipolar
Gate charge: 25nC
Type of transistor: P-MOSFET
On-state resistance: 19.4mΩ
Technology: HEXFET®
Power dissipation: 1.6W
Kind of channel: enhancement
Gate-source voltage: ±25V
на замовлення 461 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.30 грн
12+34.28 грн
50+24.38 грн
54+17.42 грн
147+16.47 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
XMC1402F064X0200AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1402F064X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Kind of core: 32-bit
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IPB60R125C6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594126B59FFD1BF&compId=IPB60R125C6-DTE.pdf?ci_sign=81e827ead9db9d126ae967c1d00236c615806a73
IPB60R125C6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
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XMC1402Q064X0200AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1402Q064X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Kind of core: 32-bit
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S25FL064LABMFM010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL064LABMFM011 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Application: automotive
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S25FL064LABMFM013 INFN-S-A0017271261-1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL064LABNFM010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL128LAGMFM013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGNFM010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL128LAGNFM013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL512SDSMFM010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL512SDSMFM013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S29CD016J0MQFM010 download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 56MHz; PQFP80
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel burst
Operating voltage: 2.5...2.75V
Operating frequency: 56MHz
Case: PQFP80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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BSS306NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E3071C8DD10B&compId=BSS306NH6327XTSA1.pdf?ci_sign=b57fd6087103aae6c00284217bd6b1dfba4849d0
BSS306NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 93mΩ
Drain current: 2.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Technology: OptiMOS™ 2
на замовлення 10594 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.87 грн
27+14.73 грн
50+10.37 грн
100+8.95 грн
172+5.46 грн
472+5.15 грн
3000+4.99 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSS214NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7CF1EC57F710B&compId=BSS214NH6327XTSA1.pdf?ci_sign=3d212ae0b6db65579c46b913210d28885837f077
BSS214NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 3317 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+17.90 грн
37+10.85 грн
53+7.52 грн
100+6.47 грн
250+5.37 грн
288+3.24 грн
791+3.06 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
S25HL512TDPNHB010 infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf?fileId=8ac78c8c7f2a768a017f52f1a4242c57
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
Application: automotive
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S25HL512TDPNHI010 002-12345_rev-AF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
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S25HL512TFANHI010 Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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S25HL512TFANHM013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
Application: automotive
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S25HS512TFANHI010
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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S25HS512TFANHI013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
товару немає в наявності
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BFP460H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP460H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.23W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 4.5V
Current gain: 90...160
Frequency: 22GHz
Kind of transistor: RF
Technology: SIEGET™
Collector current: 70mA
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.32 грн
26+15.68 грн
29+13.93 грн
33+12.03 грн
50+10.93 грн
100+10.05 грн
105+8.95 грн
287+8.47 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRF7241TRPBF description pVersion=0046&contRep=ZT&docId=E21F7487F4D128F1A303005056AB0C4F&compId=irf7241pbf.pdf?ci_sign=3e6eac7109da8f3470ac2e7a87b7804a4856b55f
IRF7241TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 879 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.27 грн
9+45.76 грн
10+41.41 грн
26+36.50 грн
71+34.44 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSS126IXTSA1 Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Electrical mounting: SMT
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+4.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
S25FS064SAGNFB033
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Application: automotive
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Case: LGA8
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Memory: 64Mb FLASH
Operating frequency: 133MHz
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В кошику  од. на суму  грн.
IRF7379TRPBF pVersion=0046&contRep=ZT&docId=E221A123F0D391F1A303005056AB0C4F&compId=irf7379pbf.pdf?ci_sign=dcd81d555b016082d976d83dba1dd0223787cfe8
IRF7379TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7329TRPBF irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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AUIRF7379QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D7464F1A6F5005056AB5A8F&compId=auirf7379q.pdf?ci_sign=b23d50bc5b963af5978a81d146c110175c10ccaf
AUIRF7379QTR
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
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IRF7424TRPBF pVersion=0046&contRep=ZT&docId=E221A2F20A319EF1A303005056AB0C4F&compId=irf7424pbf.pdf?ci_sign=2acda5302fc942a596720f26cd0040453e140573
IRF7424TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7425TRPBF pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db pVersion=0046&contRep=ZT&docId=E221A30B2ACF36F1A303005056AB0C4F&compId=irf7425pbf.pdf?ci_sign=8154e3d2bf5a42d04cc55b32e63b7ef1350777ab
IRF7425TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 899 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+83.56 грн
10+60.17 грн
18+52.25 грн
25+51.46 грн
50+47.50 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRF9317TRPBF pVersion=0046&contRep=ZT&docId=E221AF36409D0BF1A303005056AB0C4F&compId=irf9317pbf.pdf?ci_sign=8a0f5023cdbb5a2b9e43b14f674edeb990a3138a
IRF9317TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF9388TRPBF irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IPL65R460CFDAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB932CE4575B1BF&compId=IPL65R460CFD-DTE.pdf?ci_sign=d4d0007d0996f627373bb3ac4b85d887a9a79876
IPL65R460CFDAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
товару немає в наявності
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XMC4800E196F1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4800E196F1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
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XMC4800E196K1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4800E196K1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Kind of core: 32-bit
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BSB012NE2LXIXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D59F589818A11C&compId=BSB012NE2LXI-DTE.pdf?ci_sign=b06e7e426630df7168b8da6aeb6903e969bd1009
BSB012NE2LXIXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 1.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 170A
товару немає в наявності
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