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CY14B101Q2A-SXIT INFINEON TECHNOLOGIES Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
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CY14B256PA-SFXI INFINEON TECHNOLOGIES Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Memory: 256kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
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CY14B512Q2A-SXIT INFINEON TECHNOLOGIES Infineon-CY14C512Q_CY14B512Q_CY14E512Q_512_KBIT_(64K_X_8)_SPI_NVSRAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0075c348e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; SOIC8; -40÷85°C; serial
Memory: 512kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 64kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
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CY14E101J2-SXI INFINEON TECHNOLOGIES ?docID=46794 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
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CY14E256Q5A-SXQ INFINEON TECHNOLOGIES Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC8; -40÷105°C; serial
Memory: 256kb SRAM
Operating temperature: -40...105°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
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CY14V101Q3-SFXI INFINEON TECHNOLOGIES Infineon-CY14V101Q3-SFXI-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0382a34be Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Kind of interface: serial
Frequency: 30MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
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CY14V101QS-BK108XI INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: FBGA24
Mounting: SMD
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CY14V101QS-SE108XI INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
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CY14V101QS-BK108XIT INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: FBGA24
Mounting: SMD
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CY14V101QS-SE108XIT INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
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BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 INFINEON TECHNOLOGIES BSZ018NE2LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
на замовлення 4971 шт:
термін постачання 21-30 дні (днів)
8+54.96 грн
10+50.26 грн
49+47.94 грн
100+46.40 грн
Мінімальне замовлення: 8
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IRF9952TRPBF IRF9952TRPBF INFINEON TECHNOLOGIES irf9952pbf.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: SO8
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BSF030NE2LQXUMA1 BSF030NE2LQXUMA1 INFINEON TECHNOLOGIES BSF030NE2LQ-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
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IRS2304STRPBF INFINEON TECHNOLOGIES irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 85000 шт:
термін постачання 21-30 дні (днів)
2500+23.65 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IDK10G120C5XTMA1 INFINEON TECHNOLOGIES Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Max. forward impulse current: 84A
Leakage current: 22µA
Power dissipation: 165W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 2V
Load current: 10A
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IDK10G65C5 INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 1.8V
Load current: 10A
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BSC112N06LDATMA1 INFINEON TECHNOLOGIES Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6 Category: Transistors - Unclassified
Description: BSC112N06LDATMA1
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+39.39 грн
Мінімальне замовлення: 5000
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FP50R06W2E3B11BOMA1 INFINEON TECHNOLOGIES FP50R06W2E3B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
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FP25R12W1T7B11BPSA1 INFINEON TECHNOLOGIES FP25R12W1T7_B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
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IFF600B12ME4PB11BPSA1 INFINEON TECHNOLOGIES IFF600B12ME4PB11.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
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IFF450B12ME4PB11BPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFC2DCB6C4F3D1&compId=IFF450B12ME4PB11.pdf?ci_sign=c9d3db6b276df40fc2814b42a9a6055838d01d84 Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-6
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FF900R12ME7PB11BPSA1 INFINEON TECHNOLOGIES Infineon-FF900R12ME7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173b496936b4156 Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
на замовлення 162 шт:
термін постачання 21-30 дні (днів)
6+18421.45 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FS35R12W1T4B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS35R12W1T4_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af0f69b3e5df7 Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
24+2611.53 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BSC039N06NS BSC039N06NS INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E2FB308FA11C&compId=BSC039N06NS-DTE.pdf?ci_sign=e8ff53d8e981086458ea46f47acf12b3c94b9cae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFHS9301TRPBF IRFHS9301TRPBF INFINEON TECHNOLOGIES irfhs9301pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Case: PQFN2X2
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -6A
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ISP752R ISP752R INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586989DA0A7454469&compId=ISP752R.pdf?ci_sign=40895db3097c4c71d8cf3d4483eafe92946131df Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
на замовлення 2704 шт:
термін постачання 21-30 дні (днів)
4+105.94 грн
10+99.75 грн
25+98.21 грн
26+94.34 грн
250+92.02 грн
500+91.25 грн
Мінімальне замовлення: 4
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BSP752T BSP752T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697A892C9B98469&compId=BSP752T.pdf?ci_sign=b5ced3c5ed460144b067c1a56ab54b4b2531568d Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
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IRLS3034TRLPBF IRLS3034TRLPBF INFINEON TECHNOLOGIES IRLS3034TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AUIRLS3034 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8B1A083EA96143&compId=AUIRLS3034.pdf?ci_sign=ff5db222f1e89365072581b30ecf44c64c41980f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
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S29GL512T11TFIV10 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29GL512T11TFIV20 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29GL512T11TFV010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S29GL512T11TFV020 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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T560N18TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 809A
Type of thyristor: hockey-puck
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TD160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
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T3160N18TOFVTXPSA1 INFINEON TECHNOLOGIES T3160N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 7kA
Type of thyristor: hockey-puck
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TT160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
на замовлення 421 шт:
термін постачання 21-30 дні (днів)
14+31.98 грн
17+23.43 грн
50+16.63 грн
100+14.31 грн
108+8.43 грн
297+7.96 грн
Мінімальне замовлення: 14
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BCR420UE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
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BCR420UE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
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IPP50R250CPXKSA1 IPP50R250CPXKSA1 INFINEON TECHNOLOGIES IPP50R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 452 шт:
термін постачання 21-30 дні (днів)
3+148.47 грн
8+129.14 грн
20+121.40 грн
Мінімальне замовлення: 3
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BUZ73A BUZ73A INFINEON TECHNOLOGIES INFNS13891-1.pdf?t.download=true&u=5oefqw BUZ73A.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 40W
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SIPC69SN60C3X2SA2 INFINEON TECHNOLOGIES Category: Transistors - Unclassified
Description: SIPC69SN60C3X2SA2
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
2000+534.63 грн
Мінімальне замовлення: 2000
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IPB530N15N3GATMA1 IPB530N15N3GATMA1 INFINEON TECHNOLOGIES IPB530N15N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
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TLE49643KXTSA1 INFINEON TECHNOLOGIES Infineon-TLE4964_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b60139779f2b9f5404 Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)
3000+24.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ISP13DP06NMSATMA1 INFINEON TECHNOLOGIES Infineon-ISP13DP06NMS-DataSheet-v02_01-EN.pdf?fileId=5546d46269e1c019016ae951b44b1ccc Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+16.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFR2405TRLPBF IRFR2405TRLPBF INFINEON TECHNOLOGIES irfr2405pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR2405TRPBF IRFR2405TRPBF INFINEON TECHNOLOGIES irfr2405pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR7440TRPBF INFINEON TECHNOLOGIES irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
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BCR146E6327HTSA1 INFINEON TECHNOLOGIES bcr146series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440120c6802b7 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 33000 шт:
термін постачання 21-30 дні (днів)
3000+2.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DEMO SENSE2GOL INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
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STT800N16P55XPSA1 INFINEON TECHNOLOGIES STT800N16P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
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IRFR540ZTRPBF INFINEON TECHNOLOGIES irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
2000+37.72 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DD340N20SHPSA1 INFINEON TECHNOLOGIES DD340N20S.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Load current: 330A
Electrical mounting: screw
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IPW60R070CFD7 IPW60R070CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7F2EE2B5874A&compId=IPW60R070CFD7.pdf?ci_sign=68bde6167c82ae31c9a715e7932f17ad13c37a54 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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IPW60R070P6XKSA1 IPW60R070P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59546FC0F7031BF&compId=IPW60R070P6-DTE.pdf?ci_sign=51b5ba3d1091fd0d4ee959109032092458bb384e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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AUIR3240STR AUIR3240STR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3AAF61BAF8BF&compId=AUIR3240S.pdf?ci_sign=7576fdee7207b3be02f35991f19453ba01efc0d4 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 4...36V DC
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Output current: 0.3A
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AUIR3242SXUMA1 AUIR3242SXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3D7C4CCD58BF&compId=AUIR3242S.pdf?ci_sign=d75be44e9e78f376970f436c3ecddc58d6354d5a Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 3...36V DC
Mounting: SMD
Number of channels: 1
Voltage class: 40V
Output current: 0.2A
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BCW66KFE6327 BCW66KFE6327 INFINEON TECHNOLOGIES BCW66K.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
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BCW66KGE6327HTSA1 INFINEON TECHNOLOGIES bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
3000+3.55 грн
Мінімальне замовлення: 3000
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CY14B101Q2A-SXIT Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
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CY14B256PA-SFXI Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Memory: 256kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
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CY14B512Q2A-SXIT Infineon-CY14C512Q_CY14B512Q_CY14E512Q_512_KBIT_(64K_X_8)_SPI_NVSRAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0075c348e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; SOIC8; -40÷85°C; serial
Memory: 512kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 64kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
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CY14E101J2-SXI ?docID=46794
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
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CY14E256Q5A-SXQ
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC8; -40÷105°C; serial
Memory: 256kb SRAM
Operating temperature: -40...105°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
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CY14V101Q3-SFXI Infineon-CY14V101Q3-SFXI-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0382a34be
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Kind of interface: serial
Frequency: 30MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
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CY14V101QS-BK108XI Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: FBGA24
Mounting: SMD
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CY14V101QS-SE108XI Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
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CY14V101QS-BK108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: FBGA24
Mounting: SMD
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CY14V101QS-SE108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
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BSZ018NE2LSATMA1 BSZ018NE2LS-DTE.pdf
BSZ018NE2LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
на замовлення 4971 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.96 грн
10+50.26 грн
49+47.94 грн
100+46.40 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF9952TRPBF irf9952pbf.pdf
IRF9952TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: SO8
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BSF030NE2LQXUMA1 BSF030NE2LQ-DTE.pdf
BSF030NE2LQXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
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IRS2304STRPBF irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 85000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+23.65 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IDK10G120C5XTMA1 Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Max. forward impulse current: 84A
Leakage current: 22µA
Power dissipation: 165W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 2V
Load current: 10A
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IDK10G65C5
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 1.8V
Load current: 10A
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BSC112N06LDATMA1 Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BSC112N06LDATMA1
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+39.39 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
FP50R06W2E3B11BOMA1 FP50R06W2E3B11.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
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FP25R12W1T7B11BPSA1 FP25R12W1T7_B11.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
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IFF600B12ME4PB11BPSA1 IFF600B12ME4PB11.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
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IFF450B12ME4PB11BPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFC2DCB6C4F3D1&compId=IFF450B12ME4PB11.pdf?ci_sign=c9d3db6b276df40fc2814b42a9a6055838d01d84
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-6
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FF900R12ME7PB11BPSA1 Infineon-FF900R12ME7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173b496936b4156
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
на замовлення 162 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+18421.45 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FS35R12W1T4B11BOMA1 Infineon-FS35R12W1T4_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af0f69b3e5df7
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+2611.53 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BSC039N06NS pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E2FB308FA11C&compId=BSC039N06NS-DTE.pdf?ci_sign=e8ff53d8e981086458ea46f47acf12b3c94b9cae
BSC039N06NS
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFHS9301TRPBF irfhs9301pbf.pdf
IRFHS9301TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Case: PQFN2X2
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -6A
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ISP752R pVersion=0046&contRep=ZT&docId=005056AB752F1EE586989DA0A7454469&compId=ISP752R.pdf?ci_sign=40895db3097c4c71d8cf3d4483eafe92946131df
ISP752R
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
на замовлення 2704 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+105.94 грн
10+99.75 грн
25+98.21 грн
26+94.34 грн
250+92.02 грн
500+91.25 грн
Мінімальне замовлення: 4
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BSP752T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697A892C9B98469&compId=BSP752T.pdf?ci_sign=b5ced3c5ed460144b067c1a56ab54b4b2531568d
BSP752T
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
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IRLS3034TRLPBF IRLS3034TRLPBF.pdf
IRLS3034TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AUIRLS3034 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8B1A083EA96143&compId=AUIRLS3034.pdf?ci_sign=ff5db222f1e89365072581b30ecf44c64c41980f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
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S29GL512T11TFIV10 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29GL512T11TFIV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29GL512T11TFV010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S29GL512T11TFV020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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T560N18TOFXPSA1 T560N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 809A
Type of thyristor: hockey-puck
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TD160N18SOF TT160N18SOF_TD160N18SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
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T3160N18TOFVTXPSA1 T3160N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 7kA
Type of thyristor: hockey-puck
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TT160N18SOF TT160N18SOF_TD160N18SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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BAT6302VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645
BAT6302VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
на замовлення 421 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.98 грн
17+23.43 грн
50+16.63 грн
100+14.31 грн
108+8.43 грн
297+7.96 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BCR420UE6327HTSA1 Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
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BCR420UE6433HTMA1 Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
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IPP50R250CPXKSA1 IPP50R250CP-DTE.pdf
IPP50R250CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 452 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+148.47 грн
8+129.14 грн
20+121.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUZ73A INFNS13891-1.pdf?t.download=true&u=5oefqw BUZ73A.pdf
BUZ73A
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 40W
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SIPC69SN60C3X2SA2
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: SIPC69SN60C3X2SA2
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+534.63 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPB530N15N3GATMA1 IPB530N15N3G-DTE.pdf
IPB530N15N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
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TLE49643KXTSA1 Infineon-TLE4964_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b60139779f2b9f5404
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+24.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ISP13DP06NMSATMA1 Infineon-ISP13DP06NMS-DataSheet-v02_01-EN.pdf?fileId=5546d46269e1c019016ae951b44b1ccc
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+16.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFR2405TRLPBF irfr2405pbf.pdf
IRFR2405TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR2405TRPBF description irfr2405pbf.pdf
IRFR2405TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR7440TRPBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
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BCR146E6327HTSA1 bcr146series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440120c6802b7
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 33000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+2.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DEMO SENSE2GOL
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
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STT800N16P55XPSA1 STT800N16P55.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
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IRFR540ZTRPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+37.72 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DD340N20SHPSA1 DD340N20S.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Load current: 330A
Electrical mounting: screw
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IPW60R070CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7F2EE2B5874A&compId=IPW60R070CFD7.pdf?ci_sign=68bde6167c82ae31c9a715e7932f17ad13c37a54
IPW60R070CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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IPW60R070P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59546FC0F7031BF&compId=IPW60R070P6-DTE.pdf?ci_sign=51b5ba3d1091fd0d4ee959109032092458bb384e
IPW60R070P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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AUIR3240STR pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3AAF61BAF8BF&compId=AUIR3240S.pdf?ci_sign=7576fdee7207b3be02f35991f19453ba01efc0d4
AUIR3240STR
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 4...36V DC
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Output current: 0.3A
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AUIR3242SXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3D7C4CCD58BF&compId=AUIR3242S.pdf?ci_sign=d75be44e9e78f376970f436c3ecddc58d6354d5a
AUIR3242SXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 3...36V DC
Mounting: SMD
Number of channels: 1
Voltage class: 40V
Output current: 0.2A
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BCW66KFE6327 BCW66K.pdf
BCW66KFE6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
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BCW66KGE6327HTSA1 bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+3.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
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