Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149346) > Сторінка 2486 з 2490

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XMC1302Q024F0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 8
Number of inputs/outputs: 22
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XMC1302Q024X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1300
Case: PG-VQFN-24
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 8
Number of inputs/outputs: 22
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XMC1302T016X0032ABXUMA1 XMC1302T016X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x2; BCCU; DSP; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 6
Number of inputs/outputs: 14
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XMC4104F64F64ABXQMA1 XMC4104F64F64ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
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XMC4108F64K64ABXQMA1 XMC4108F64K64ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-64
Family: XMC4100
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 64kB FLASH
Kind of core: 32-bit
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XMC4100F64F128ABXQMA1 XMC4100F64F128ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
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XMC4200F64F256ABXQMA1 XMC4200F64F256ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 40kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4200
Operating temperature: -40...85°C
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XMC4104F64F128ABXQMA1 XMC4104F64F128ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
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XMC4104Q48F64ABXUMA1 XMC4104Q48F64ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
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XMC4104Q48K64ABXUMA1 XMC4104Q48K64ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
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XMC4108Q48K64ABXUMA1 XMC4108Q48K64ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-VQFN-48
Family: XMC4100
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 64kB FLASH
Kind of core: 32-bit
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XMC4300F100F256AAXQMA1 XMC4300F100F256AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20CE951CEEFA8&compId=XMC4300-DTE.pdf?ci_sign=4a33a095c027e0f144dd0ab2bd2044004e42c17e Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 14
Number of 16bit timers: 12
Number of inputs/outputs: 75
Kind of core: 32-bit
Memory: 128kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4300
Operating temperature: -40...85°C
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XMC4100Q48K128ABXUMA1 XMC4100Q48K128ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
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XMC4504F100K512ACXQMA1 XMC4504F100K512ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
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XMC4100Q48F128ABXUMA1 XMC4100Q48F128ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
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XMC4104Q48F128ABXUMA1 XMC4104Q48F128ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
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XMC4104Q48K128ABXUMA1 XMC4104Q48K128ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
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XMC4200Q48F256ABXUMA1 XMC4200Q48F256ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 40kBSRAM,256kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 40kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4200
Operating temperature: -40...85°C
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XMC4300F100K256AAXQMA1 XMC4300F100K256AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20CE951CEEFA8&compId=XMC4300-DTE.pdf?ci_sign=4a33a095c027e0f144dd0ab2bd2044004e42c17e Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 14
Number of 16bit timers: 12
Number of inputs/outputs: 75
Kind of core: 32-bit
Memory: 128kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4300
Operating temperature: -40...125°C
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XMC4504F144F512ACXQMA1 XMC4504F144F512ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
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IRS25411STRPBF IRS25411STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222831E099A5DF1A303005056AB0C4F&compId=irs25401pbf.pdf?ci_sign=e254e61d544328852a104fbb88372e928f9b660a Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: SO8
Output current: -700...500mA
Power: 625mW
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 180ns
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BGT24LTR11N16E6327XTSA1 BGT24LTR11N16E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD599DAD3C5E28&compId=BGT24LTR11.pdf?ci_sign=affc801d3381666d890169462b510c4449fcfc61 Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Case: TSNP16
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.2...3.4V DC
DC supply current: 45mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 10dB
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IMZA65R048M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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IPD60R280P7S IPD60R280P7S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E45A84CBF8C749&compId=IPD60R280P7S.pdf?ci_sign=1564dce193aafb1b5380bf961fddff3a8557bcbb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
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IPD60R600P7ATMA1 IPD60R600P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be5a5523cc4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Gate-source voltage: ±20V
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO252-3
товару немає в наявності
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IPD60R170CFD7 IPD60R170CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7255599D874A&compId=IPD60R170CFD7.pdf?ci_sign=87050184a9d4b4583b02a8c4dcb529f39bd56eee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 28nC
On-state resistance: 0.325Ω
Drain current: 9A
Power dissipation: 76W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
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IPD60R1K0PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 3A; Idm: 8.8A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 1.978Ω
Drain current: 3A
Pulsed drain current: 8.8A
Power dissipation: 26W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
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IPD60R1K5PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2.892Ω
Drain current: 2.2A
Pulsed drain current: 6A
Power dissipation: 22W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
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IPD60R2K0C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2Ω
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 22.3W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
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IPD60R2K0PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226704e76747 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 1.9A; 20W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.824Ω
Drain current: 1.9A
Pulsed drain current: 4.5A
Power dissipation: 20W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
товару немає в наявності
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IPD60R380C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.38Ω
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
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IPD60R385CPATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.385Ω
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ CP
Drain-source voltage: 600V
Case: PG-TO252
товару немає в наявності
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IPD60R3K3C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.3Ω
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
товару немає в наявності
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IPD60R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
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IPD60R600C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
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IPD60R600PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 1.219Ω
Drain current: 4A
Pulsed drain current: 14A
Power dissipation: 31W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: PG-TO252-3
товару немає в наявності
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IPD60R1K0CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 61W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 13nC
On-state resistance: 1Ω
Drain current: 6.8A
Power dissipation: 61W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
на замовлення 17500 шт:
термін постачання 21-30 дні (днів)
2500+19.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R2K1CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 3.7A; 38W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 6.7nC
On-state resistance: 2.1Ω
Drain current: 3.7A
Power dissipation: 38W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
2500+14.75 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R180P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+81.85 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R1K5CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 5A; 49W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 9.4nC
On-state resistance: 1.5Ω
Drain current: 5A
Power dissipation: 49W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+16.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R380P6ATMA1 INFINEON TECHNOLOGIES Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10.6A; 83W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 19nC
On-state resistance: 0.38Ω
Drain current: 10.6A
Power dissipation: 83W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+41.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R3K4CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 2.6A; 29W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 4.6nC
On-state resistance: 3.17Ω
Drain current: 2.6A
Power dissipation: 29W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
на замовлення 40000 шт:
термін постачання 21-30 дні (днів)
2500+13.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R600P6ATMA1 INFINEON TECHNOLOGIES DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 7.3A; 63W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 12nC
On-state resistance: 0.6Ω
Drain current: 7.3A
Power dissipation: 63W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+30.27 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R800CEAUMA1 INFINEON TECHNOLOGIES IPD%2CIPA60R800CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 17.2nC
On-state resistance: 0.8Ω
Drain current: 8.4A
Power dissipation: 74W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+22.94 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R950C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
2500+38.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)
112+3.82 грн
124+3.20 грн
250+2.83 грн
380+2.45 грн
1045+2.31 грн
Мінімальне замовлення: 112
В кошику  од. на суму  грн.
BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 150MHz
Type of transistor: NPN x2
Polarisation: bipolar
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)
39+11.08 грн
59+6.73 грн
182+5.15 грн
500+4.83 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BCR135WH6327 BCR135WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 150MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
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BSS205NH6327XTSA1 BSS205NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7C89A92FB310B&compId=BSS205NH6327XTSA1.pdf?ci_sign=9e21e254c345f4f5bd15a7d2d6784307e5ed3846 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 85mΩ
Drain current: 2.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 5989 шт:
термін постачання 21-30 дні (днів)
18+23.87 грн
23+17.42 грн
28+14.41 грн
38+10.45 грн
50+8.11 грн
100+6.50 грн
214+4.35 грн
588+4.12 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSS806NH6327XTSA1 BSS806NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A83CD3DEEF310B&compId=BSS806NH6327XTSA1.pdf?ci_sign=0a43cefa63a012994060e8c30caf4f990ca0f5cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 82mΩ
Drain current: 2.3A
Power dissipation: 0.5W
Gate-source voltage: ±8V
Drain-source voltage: 20V
на замовлення 3303 шт:
термін постачання 21-30 дні (днів)
20+21.32 грн
32+12.51 грн
50+8.76 грн
100+7.56 грн
276+3.37 грн
758+3.19 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A835FDBDAD310B&compId=BSS806NEH6327XTSA1.pdf?ci_sign=6c6768b26d5644a3eb003bb38a7a7b5d3fc7db0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 2171 шт:
термін постачання 21-30 дні (днів)
21+20.46 грн
33+12.19 грн
39+10.37 грн
53+7.47 грн
100+6.62 грн
214+4.35 грн
588+4.12 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
IDH12SG60C IDH12SG60C INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB9852D0F02CFA8&compId=IDH12SG60C-DTE.pdf?ci_sign=948552552f4302256376ce48163a89520e60e971 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; PG-TO220-2; Ir: 1uA
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 59A
Kind of package: tube
Leakage current: 1µA
Power dissipation: 125W
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
2+234.47 грн
7+150.43 грн
18+141.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDH08SG60CXKSA2 IDH08SG60CXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EABC0B3CE5C469&compId=IDH08SG60C.pdf?ci_sign=67eb5deb2a940f929244edb670b052658efcbe09 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; PG-TO220-2; 100W
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 42A
Kind of package: tube
Leakage current: 0.6µA
Power dissipation: 100W
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
2+322.29 грн
6+156.76 грн
17+148.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
50+57.13 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSZ120P03NS3GATMA1 BSZ120P03NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A54B51EC71CC&compId=BSZ120P03NS3GATMA1-dte.pdf?ci_sign=e0c32f32dc5dbc17c7be9bd8360258dbaa5dcb5d Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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ICE3A1065ELJFKLA1 INFINEON TECHNOLOGIES Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
50+114.25 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPB100N04S303ATMA1 IPB100N04S303ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA3248C8A286143&compId=IPB100N04S303.pdf?ci_sign=2b702d83a25df2bc0e3b44f941578f4d31d91f02 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ T
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 110nC
On-state resistance: 2.5mΩ
Power dissipation: 214W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
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IPC100N04S5-1R9 IPC100N04S5-1R9 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5216505FA74A&compId=IPC100N04S51R9.pdf?ci_sign=2871d189f489fc547c6611456c441bcb643cc716 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 65nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5-1R2 IPC100N04S5-1R2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA49771D5F674A&compId=IPC100N04S51R2.pdf?ci_sign=5f94a9b9fd21e204afc56b8d21626078719b2d53 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5-1R7 IPC100N04S5-1R7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA4DBB5DE0274A&compId=IPC100N04S51R7.pdf?ci_sign=98c11ae58317b34a2cf3add2c3722b43b2bd6908 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
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XMC1302Q024F0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 8
Number of inputs/outputs: 22
товару немає в наявності
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XMC1302Q024X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1300
Case: PG-VQFN-24
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 8
Number of inputs/outputs: 22
товару немає в наявності
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XMC1302T016X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1302T016X0032ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x2; BCCU; DSP; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 6
Number of inputs/outputs: 14
товару немає в наявності
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XMC4104F64F64ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104F64F64ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
товару немає в наявності
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XMC4108F64K64ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4108F64K64ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-64
Family: XMC4100
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 64kB FLASH
Kind of core: 32-bit
товару немає в наявності
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XMC4100F64F128ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4100F64F128ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4200F64F256ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4200F64F256ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 40kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4200
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4104F64F128ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104F64F128ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4104Q48F64ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104Q48F64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4104Q48K64ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104Q48K64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4108Q48K64ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4108Q48K64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-VQFN-48
Family: XMC4100
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 64kB FLASH
Kind of core: 32-bit
товару немає в наявності
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XMC4300F100F256AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20CE951CEEFA8&compId=XMC4300-DTE.pdf?ci_sign=4a33a095c027e0f144dd0ab2bd2044004e42c17e
XMC4300F100F256AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 14
Number of 16bit timers: 12
Number of inputs/outputs: 75
Kind of core: 32-bit
Memory: 128kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4300
Operating temperature: -40...85°C
товару немає в наявності
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XMC4100Q48K128ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4100Q48K128ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
товару немає в наявності
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XMC4504F100K512ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4504F100K512ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4100Q48F128ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4100Q48F128ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4104Q48F128ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104Q48F128ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4104Q48K128ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104Q48K128ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
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XMC4200Q48F256ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4200Q48F256ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 40kBSRAM,256kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 40kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4200
Operating temperature: -40...85°C
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XMC4300F100K256AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20CE951CEEFA8&compId=XMC4300-DTE.pdf?ci_sign=4a33a095c027e0f144dd0ab2bd2044004e42c17e
XMC4300F100K256AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 14
Number of 16bit timers: 12
Number of inputs/outputs: 75
Kind of core: 32-bit
Memory: 128kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4300
Operating temperature: -40...125°C
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В кошику  од. на суму  грн.
XMC4504F144F512ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4504F144F512ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IRS25411STRPBF pVersion=0046&contRep=ZT&docId=E222831E099A5DF1A303005056AB0C4F&compId=irs25401pbf.pdf?ci_sign=e254e61d544328852a104fbb88372e928f9b660a
IRS25411STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: SO8
Output current: -700...500mA
Power: 625mW
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 180ns
товару немає в наявності
В кошику  од. на суму  грн.
BGT24LTR11N16E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD599DAD3C5E28&compId=BGT24LTR11.pdf?ci_sign=affc801d3381666d890169462b510c4449fcfc61
BGT24LTR11N16E6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Case: TSNP16
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.2...3.4V DC
DC supply current: 45mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 10dB
товару немає в наявності
В кошику  од. на суму  грн.
IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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В кошику  од. на суму  грн.
IPD60R280P7S pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E45A84CBF8C749&compId=IPD60R280P7S.pdf?ci_sign=1564dce193aafb1b5380bf961fddff3a8557bcbb
IPD60R280P7S
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600P7ATMA1 Infineon-IPD60R600P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be5a5523cc4
IPD60R600P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Gate-source voltage: ±20V
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R170CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7255599D874A&compId=IPD60R170CFD7.pdf?ci_sign=87050184a9d4b4583b02a8c4dcb529f39bd56eee
IPD60R170CFD7
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 28nC
On-state resistance: 0.325Ω
Drain current: 9A
Power dissipation: 76W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R1K0PFD7SAUMA1 Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 3A; Idm: 8.8A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 1.978Ω
Drain current: 3A
Pulsed drain current: 8.8A
Power dissipation: 26W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R1K5PFD7SAUMA1 Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2.892Ω
Drain current: 2.2A
Pulsed drain current: 6A
Power dissipation: 22W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R2K0C6ATMA1 Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2Ω
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 22.3W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R2K0PFD7SAUMA1 Infineon-IPD60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226704e76747
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 1.9A; 20W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.824Ω
Drain current: 1.9A
Pulsed drain current: 4.5A
Power dissipation: 20W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R380C6ATMA1 Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.38Ω
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.385Ω
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ CP
Drain-source voltage: 600V
Case: PG-TO252
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R3K3C6ATMA1 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.3Ω
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R400CEAUMA1 Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600C6ATMA1 Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600PFD7SAUMA1 Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 1.219Ω
Drain current: 4A
Pulsed drain current: 14A
Power dissipation: 31W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: PG-TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R1K0CEAUMA1 Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 61W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 13nC
On-state resistance: 1Ω
Drain current: 6.8A
Power dissipation: 61W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
на замовлення 17500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+19.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R2K1CEAUMA1 Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 3.7A; 38W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 6.7nC
On-state resistance: 2.1Ω
Drain current: 3.7A
Power dissipation: 38W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+14.75 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R180P7ATMA1 Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+81.85 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R1K5CEAUMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 5A; 49W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 9.4nC
On-state resistance: 1.5Ω
Drain current: 5A
Power dissipation: 49W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+16.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R380P6ATMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10.6A; 83W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 19nC
On-state resistance: 0.38Ω
Drain current: 10.6A
Power dissipation: 83W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+41.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R3K4CEAUMA1 Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 2.6A; 29W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 4.6nC
On-state resistance: 3.17Ω
Drain current: 2.6A
Power dissipation: 29W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
на замовлення 40000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+13.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R600P6ATMA1 DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 7.3A; 63W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 12nC
On-state resistance: 0.6Ω
Drain current: 7.3A
Power dissipation: 63W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+30.27 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R800CEAUMA1 IPD%2CIPA60R800CE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 17.2nC
On-state resistance: 0.8Ω
Drain current: 8.4A
Power dissipation: 74W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+22.94 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R950C6ATMA1 Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+38.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BCR185E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba
BCR185E6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
112+3.82 грн
124+3.20 грн
250+2.83 грн
380+2.45 грн
1045+2.31 грн
Мінімальне замовлення: 112
В кошику  од. на суму  грн.
BCR135SH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135SH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 150MHz
Type of transistor: NPN x2
Polarisation: bipolar
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.08 грн
59+6.73 грн
182+5.15 грн
500+4.83 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BCR135WH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135WH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 150MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
товару немає в наявності
В кошику  од. на суму  грн.
BSS205NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7C89A92FB310B&compId=BSS205NH6327XTSA1.pdf?ci_sign=9e21e254c345f4f5bd15a7d2d6784307e5ed3846
BSS205NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 85mΩ
Drain current: 2.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 5989 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.87 грн
23+17.42 грн
28+14.41 грн
38+10.45 грн
50+8.11 грн
100+6.50 грн
214+4.35 грн
588+4.12 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSS806NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A83CD3DEEF310B&compId=BSS806NH6327XTSA1.pdf?ci_sign=0a43cefa63a012994060e8c30caf4f990ca0f5cc
BSS806NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 82mΩ
Drain current: 2.3A
Power dissipation: 0.5W
Gate-source voltage: ±8V
Drain-source voltage: 20V
на замовлення 3303 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.32 грн
32+12.51 грн
50+8.76 грн
100+7.56 грн
276+3.37 грн
758+3.19 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BSS806NEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A835FDBDAD310B&compId=BSS806NEH6327XTSA1.pdf?ci_sign=6c6768b26d5644a3eb003bb38a7a7b5d3fc7db0a
BSS806NEH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 2171 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.46 грн
33+12.19 грн
39+10.37 грн
53+7.47 грн
100+6.62 грн
214+4.35 грн
588+4.12 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
IDH12SG60C pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB9852D0F02CFA8&compId=IDH12SG60C-DTE.pdf?ci_sign=948552552f4302256376ce48163a89520e60e971
IDH12SG60C
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; PG-TO220-2; Ir: 1uA
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 59A
Kind of package: tube
Leakage current: 1µA
Power dissipation: 125W
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+234.47 грн
7+150.43 грн
18+141.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDH08SG60CXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EABC0B3CE5C469&compId=IDH08SG60C.pdf?ci_sign=67eb5deb2a940f929244edb670b052658efcbe09
IDH08SG60CXKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; PG-TO220-2; 100W
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 42A
Kind of package: tube
Leakage current: 0.6µA
Power dissipation: 100W
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+322.29 грн
6+156.76 грн
17+148.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+57.13 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSZ120P03NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A54B51EC71CC&compId=BSZ120P03NS3GATMA1-dte.pdf?ci_sign=e0c32f32dc5dbc17c7be9bd8360258dbaa5dcb5d
BSZ120P03NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
ICE3A1065ELJFKLA1 Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+114.25 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPB100N04S303ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA3248C8A286143&compId=IPB100N04S303.pdf?ci_sign=2b702d83a25df2bc0e3b44f941578f4d31d91f02
IPB100N04S303ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ T
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 110nC
On-state resistance: 2.5mΩ
Power dissipation: 214W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5-1R9 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5216505FA74A&compId=IPC100N04S51R9.pdf?ci_sign=2871d189f489fc547c6611456c441bcb643cc716
IPC100N04S5-1R9
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 65nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5-1R2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA49771D5F674A&compId=IPC100N04S51R2.pdf?ci_sign=5f94a9b9fd21e204afc56b8d21626078719b2d53
IPC100N04S5-1R2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPC100N04S5-1R7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA4DBB5DE0274A&compId=IPC100N04S51R7.pdf?ci_sign=98c11ae58317b34a2cf3add2c3722b43b2bd6908
IPC100N04S5-1R7
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
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