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CY7C1471BV25-133AXI INFINEON TECHNOLOGIES ?docID=49452 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 133MHz
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
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IPP040N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 7050 шт:
термін постачання 21-30 дні (днів)
50+52.51 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IRLS4030TRLPBF IRLS4030TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1405327EAF5EA&compId=IRLS4030TRLPBF.pdf?ci_sign=e08ef8e4ed71a18d7be89ec36c726beec3021151 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BTS5012SDAAUMA1 INFINEON TECHNOLOGIES Infineon-BTS5012SDA-DS-v01_01-en.pdf?folderId=db3a304314dca38901152836c5a412ab&fileId=db3a30431d8a6b3c011db95c6eba237d&ack=t Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+129.11 грн
Мінімальне замовлення: 2500
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BTS50121EKBXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+111.90 грн
Мінімальне замовлення: 2500
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IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Case: PG-TO220-3
Kind of package: tube
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
2+388.20 грн
3+324.50 грн
10+284.54 грн
Мінімальне замовлення: 2
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CY8C29466-24PVXIT INFINEON TECHNOLOGIES Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: Integrated circuits - Unclassified
Description: CY8C29466-24PVXIT
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+1018.27 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPW90R340C3XKSA1 INFINEON TECHNOLOGIES Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
на замовлення 359 шт:
термін постачання 21-30 дні (днів)
30+265.97 грн
120+222.20 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BSB104N08NP3GXUSA1 BSB104N08NP3GXUSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C220E6DEEA811C&compId=BSB104N08NP3G-DTE.pdf?ci_sign=832b18762d15ed5ee8983b6b176c4fdb34e0e794 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10.4mΩ
Power dissipation: 48W
Drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 80V
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IPP034N08N5AKSA1 IPP034N08N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB1121F18CC11C&compId=IPP034N08N5-DTE.pdf?ci_sign=1dda73ae20d4521fd3f3e2996dc6f9936161321f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB024N08N5ATMA1 IPB024N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA8C0E6BD0011C&compId=IPB024N08N5-dte.pdf?ci_sign=49f9c54818950a9a239eac3f0159014c59fedaf1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
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IPB054N08N3GATMA1 IPB054N08N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAD8376444C11C&compId=IPB054N08N3G-DTE.pdf?ci_sign=a97463763342bf8843fb520d4a928c6f3f3b933a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.4mΩ
Power dissipation: 150W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 80V
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IAUC64N08S5L075ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 11.1mΩ
Power dissipation: 75W
Drain current: 13A
Pulsed drain current: 256A
Gate-source voltage: ±20V
Drain-source voltage: 80V
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IPP024N08NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP024N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f70288ae1698 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 80V; 182A; 214W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Mounting: THT
Gate charge: 89nC
On-state resistance: 2.4mΩ
Power dissipation: 214W
Drain current: 182A
Gate-source voltage: 20V
Drain-source voltage: 80V
на замовлення 945 шт:
термін постачання 21-30 дні (днів)
50+91.24 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
DD540N26K DD540N26K INFINEON TECHNOLOGIES DD540N2xK.pdf Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Case: BG-PB60AT-1
Max. forward voltage: 1.48V
Load current: 540A
Max. off-state voltage: 2.6kV
Max. forward impulse current: 16.5kA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
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DZ540N22K DZ540N22K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9D0A5D069C469&compId=DZ540N22K.pdf?ci_sign=8c3ad01c6faae600eb36f97b444d92b787a7d1aa Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.78V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.2kV
Semiconductor structure: single diode
Type of semiconductor module: diode
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DZ540N26K DZ540N26K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6AD62BD33C469&compId=DZ540N26K.pdf?ci_sign=de8f37489a18e39211aff5074db5f32f3ac4415d Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Semiconductor structure: single diode
Type of semiconductor module: diode
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SPD09P06PLGBTMA1 SPD09P06PLGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C871EC1151CC&compId=SPD09P06PLGBTMA1-DTE.pdf?ci_sign=159e1dd4d16b5783d745104ea92eb75c1c742566 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Kind of channel: enhancement
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 42W
на замовлення 1738 шт:
термін постачання 21-30 дні (днів)
7+66.28 грн
8+53.39 грн
10+48.04 грн
50+36.05 грн
100+35.97 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IDWD30G120C5XKSA1 IDWD30G120C5XKSA1 INFINEON TECHNOLOGIES infineon-idwd30g120c5-datasheet-en.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 0.24kA
Power dissipation: 332W
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FF300R17ME4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A8BDE17AC13D7&compId=FF300R17ME4.pdf?ci_sign=3165dc23580ded91f906ca73de1a5b015a0a9dcf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Technology: EconoDUAL™ 3
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Case: AG-ECONOD-3
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S29GL256S10FHI020 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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BCR198E6327HTSA1 INFINEON TECHNOLOGIES bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 27000 шт:
термін постачання 21-30 дні (днів)
3000+2.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRF7480MTRPBF INFINEON TECHNOLOGIES irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRL7486MTRPBF INFINEON TECHNOLOGIES IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF6668TRPBF IRF6668TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6E04AA9E5EF1A303005056AB0C4F&compId=irf6668pbf.pdf?ci_sign=3d071b1127b1dfff4ca1aec60de8486f5a4ff2d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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IRF6613TRPBF IRF6613TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F68802DD922F1A303005056AB0C4F&compId=irf6613pbf.pdf?ci_sign=22b184a7d9530b239b01848c8503885fd8923f04 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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IRF6648TRPBF IRF6648TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D8D82FF2CF1A303005056AB0C4F&compId=irf6648pbf.pdf?ci_sign=09bf340e62947621a3eb9a51d35afb4ae0b9c410 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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AUIRF7640S2TR AUIRF7640S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7480F1A6F5005056AB5A8F&compId=auirf7640s2.pdf?ci_sign=d080479f8227fc8010aaf755fcbe73634e14b94a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 30W
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AUIRF7647S2TR AUIRF7647S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D748EF1A6F5005056AB5A8F&compId=auirf7647s2.pdf?ci_sign=a5ade660db264cb9e00cb8ccb2dffd04e4723d6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 41W
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AUIRF7648M2TR AUIRF7648M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D749CF1A6F5005056AB5A8F&compId=auirf7648m2.pdf?ci_sign=ebc60ccc8adf31a6563568cfeee5902d69161772 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
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AUIRF7669L2TR AUIRF7669L2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74B8F1A6F5005056AB5A8F&compId=auirf7669l2.pdf?ci_sign=dbff2b847d938d04165ecc80e0288b271c038e6f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 100W
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AUIRF7675M2TR AUIRF7675M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74C6F1A6F5005056AB5A8F&compId=auirf7675m2.pdf?ci_sign=6f2fdedd9b7a7dd5fc79b040865f7cc6be687d64 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 45W
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AUIRF7736M2TR AUIRF7736M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74D4F1A6F5005056AB5A8F&compId=auirf7736m2.pdf?ci_sign=b40706946f99bbe0e7b0512c740cc99a0530a4b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
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AUIRF7737L2TR AUIRF7737L2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74E2F1A6F5005056AB5A8F&compId=auirf7737l2.pdf?ci_sign=988a0605716b6ae68df67a927a25574adeb3e3ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 83W
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AUIRF7739L2TR AUIRF7739L2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74FEF1A6F5005056AB5A8F&compId=auirf7739l2.pdf?ci_sign=763f17a5c4d0c90cf8f3a4c554ade81af3e0c685 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
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AUIRL7732S2TR AUIRL7732S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045A07B793EF1A6F5005056AB5A8F&compId=auirl7732s2.pdf?ci_sign=ddf47b1ea64ae3b106eec640a657904cc40ff659 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 41W
Features of semiconductor devices: logic level
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AUIRL7736M2TR AUIRL7736M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045A07B794CF1A6F5005056AB5A8F&compId=auirl7736m2.pdf?ci_sign=396d2e157a61a6f71b207c711048dbabfc61ef07 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
Features of semiconductor devices: logic level
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IRF6617TRPBF IRF6617TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F68F6F3C254F1A303005056AB0C4F&compId=irf6617pbf.pdf?ci_sign=8194306b9a0254a0290e1c6c85b89e2daced3d6d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
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IRF6623TRPBF IRF6623TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F69BF922773F1A303005056AB0C4F&compId=irf6623pbf.pdf?ci_sign=7e47b28080f5bc09af2f5dfabdcf15cbcfcda1b6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
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IRF6646TRPBF IRF6646TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D6F02B060F1A303005056AB0C4F&compId=irf6646pbf.pdf?ci_sign=83a194730ab9f4171c6af53e4a964c5c99aadec6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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IRF6674TRPBF IRF6674TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6E21611C47F1A303005056AB0C4F&compId=irf6674pbf.pdf?ci_sign=6f30856429dd849e725522aa6baeff678ecc5240 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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IRF6715MTRPBF IRF6715MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7007E134E9F1A303005056AB0C4F&compId=irf6715mpbf.pdf?ci_sign=62374627c1017a1a9ad461228f8c75cd0c4ca3e2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
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IRF6716MTRPBF IRF6716MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7021DF830BF1A303005056AB0C4F&compId=irf6716mpbf.pdf?ci_sign=169aef872d10aacc80aeb938269d641f989a2ef6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
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IRF6785MTRPBF IRF6785MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F721B77381DF1A303005056AB0C4F&compId=irf6785mpbf.pdf?ci_sign=9ead012a52e6c003d2cb3151b6ca9ff5aeb45017 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 57W
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IRF6795MTRPBF IRF6795MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F723885ED80F1A303005056AB0C4F&compId=irf6795mpbf.pdf?ci_sign=9d49a0948566a3df84490265ddb6219a15d0ce6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 75W
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IRF6811STRPBF IRF6811STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7282E16378F1A303005056AB0C4F&compId=irf6811spbf.pdf?ci_sign=579b5a75859bdda2e370556044bd3504e41a20aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 32W
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IRF6894MTRPBF IRF6894MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F72A548A092F1A303005056AB0C4F&compId=irf6894mpbf.pdf?ci_sign=eb0a6907cd34648584abc41f075c9b9488986d39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 54W
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IRF6898MTRPBF IRF6898MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F72C0D51813F1A303005056AB0C4F&compId=irf6898mpbf.pdf?ci_sign=2cf3ed416c9acdf1e84616972f31edd8f6034727 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
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IRF7739L1TRPBF IRF7739L1TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8A397ACBB5EA&compId=IRF7739L1TRPBF.pdf?ci_sign=42f6f850806d5dbb3ce2d0cdd11430ea04a209f9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
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IRF7739L2TRPBF IRF7739L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A96E6489E7F1A303005056AB0C4F&compId=irf7739l2pbf.pdf?ci_sign=296feb793da6921ebca5ab264bdfe2983eb7f134 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
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IRF7749L2TRPBF IRF7749L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A98A20BC1FF1A303005056AB0C4F&compId=irf7749l2pbf.pdf?ci_sign=b464ed5cc7d209a4bc1050ee64b1542e1151909c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7759L2TRPBF IRF7759L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Power dissipation: 125W
Case: DirectFET
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 200nC
Kind of channel: enhancement
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IRF7769L2TRPBF IRF7769L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA53F02E47F1A303005056AB0C4F&compId=irf7769l2pbf.pdf?ci_sign=5cd3eeb2ac76d76da1ad88b7a602e610094c74ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
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IRF7779L2TRPBF IRF7779L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA743EF966F1A303005056AB0C4F&compId=irf7779l2pbf.pdf?ci_sign=a411caebdb5e453bbb838d0678c14cccf71cf252 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
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IRF7946TRPBF IRF7946TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC97E68E7355EA&compId=IRF7946TRPBF.pdf?ci_sign=ac36c1ec84c1dbd734ca4b3ef349040e5869064e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 96W
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IRF6645TRPBF IRF6645TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D4F04E802F1A303005056AB0C4F&compId=irf6645pbf.pdf?ci_sign=b9722bf4f481f3c294902eb315726445e6f9e24d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
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IRF6641TRPBF IRF6641TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6CFED008FEF1A303005056AB0C4F&compId=irf6641pbf.pdf?ci_sign=3e43d1a3b768edd2c9fe2c68790af0399ca0d64e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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AUIRF7665S2TR AUIRF7665S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74AAF1A6F5005056AB5A8F&compId=auirf7665s2.pdf?ci_sign=2dfdc926c8068713a22a7ec5c3a3577b51d331dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 30W
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AUIRL7766M2TR AUIRL7766M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045A07B795AF1A6F5005056AB5A8F&compId=auirl7766m2.pdf?ci_sign=4c325d859c0e4ada8427c9bfb0a836e4c3900005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 62.5W
Features of semiconductor devices: logic level
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IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F672CDB9B16F1A303005056AB0C4F&compId=irf6216pbf.pdf?ci_sign=9ad0f60fd0f5dd2bab877d7a145bd99db3800a4b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
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CY7C1471BV25-133AXI ?docID=49452
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 133MHz
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
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IPP040N06NF2SAKMA1 Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 7050 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+52.51 грн
Мінімальне замовлення: 50
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IRLS4030TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1405327EAF5EA&compId=IRLS4030TRLPBF.pdf?ci_sign=e08ef8e4ed71a18d7be89ec36c726beec3021151
IRLS4030TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BTS5012SDAAUMA1 Infineon-BTS5012SDA-DS-v01_01-en.pdf?folderId=db3a304314dca38901152836c5a412ab&fileId=db3a30431d8a6b3c011db95c6eba237d&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+129.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BTS50121EKBXUMA1 Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+111.90 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPP020N08N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86
IPP020N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Case: PG-TO220-3
Kind of package: tube
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+388.20 грн
3+324.50 грн
10+284.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C29466-24PVXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C29466-24PVXIT
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+1018.27 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPW90R340C3XKSA1 Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
на замовлення 359 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+265.97 грн
120+222.20 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BSB104N08NP3GXUSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C220E6DEEA811C&compId=BSB104N08NP3G-DTE.pdf?ci_sign=832b18762d15ed5ee8983b6b176c4fdb34e0e794
BSB104N08NP3GXUSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10.4mΩ
Power dissipation: 48W
Drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 80V
товару немає в наявності
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IPP034N08N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB1121F18CC11C&compId=IPP034N08N5-DTE.pdf?ci_sign=1dda73ae20d4521fd3f3e2996dc6f9936161321f
IPP034N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB024N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA8C0E6BD0011C&compId=IPB024N08N5-dte.pdf?ci_sign=49f9c54818950a9a239eac3f0159014c59fedaf1
IPB024N08N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
товару немає в наявності
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IPB054N08N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAD8376444C11C&compId=IPB054N08N3G-DTE.pdf?ci_sign=a97463763342bf8843fb520d4a928c6f3f3b933a
IPB054N08N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.4mΩ
Power dissipation: 150W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 80V
товару немає в наявності
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IAUC64N08S5L075ATMA1 Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 11.1mΩ
Power dissipation: 75W
Drain current: 13A
Pulsed drain current: 256A
Gate-source voltage: ±20V
Drain-source voltage: 80V
товару немає в наявності
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IPP024N08NF2SAKMA1 Infineon-IPP024N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f70288ae1698
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 80V; 182A; 214W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Mounting: THT
Gate charge: 89nC
On-state resistance: 2.4mΩ
Power dissipation: 214W
Drain current: 182A
Gate-source voltage: 20V
Drain-source voltage: 80V
на замовлення 945 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+91.24 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
DD540N26K DD540N2xK.pdf
DD540N26K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Case: BG-PB60AT-1
Max. forward voltage: 1.48V
Load current: 540A
Max. off-state voltage: 2.6kV
Max. forward impulse current: 16.5kA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
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DZ540N22K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9D0A5D069C469&compId=DZ540N22K.pdf?ci_sign=8c3ad01c6faae600eb36f97b444d92b787a7d1aa
DZ540N22K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.78V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.2kV
Semiconductor structure: single diode
Type of semiconductor module: diode
товару немає в наявності
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DZ540N26K pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6AD62BD33C469&compId=DZ540N26K.pdf?ci_sign=de8f37489a18e39211aff5074db5f32f3ac4415d
DZ540N26K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Semiconductor structure: single diode
Type of semiconductor module: diode
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В кошику  од. на суму  грн.
SPD09P06PLGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C871EC1151CC&compId=SPD09P06PLGBTMA1-DTE.pdf?ci_sign=159e1dd4d16b5783d745104ea92eb75c1c742566
SPD09P06PLGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Kind of channel: enhancement
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 42W
на замовлення 1738 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+66.28 грн
8+53.39 грн
10+48.04 грн
50+36.05 грн
100+35.97 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IDWD30G120C5XKSA1 infineon-idwd30g120c5-datasheet-en.pdf
IDWD30G120C5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 0.24kA
Power dissipation: 332W
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FF300R17ME4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A8BDE17AC13D7&compId=FF300R17ME4.pdf?ci_sign=3165dc23580ded91f906ca73de1a5b015a0a9dcf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Technology: EconoDUAL™ 3
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Case: AG-ECONOD-3
товару немає в наявності
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S29GL256S10FHI020 S29GL_128S_01GS_00.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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BCR198E6327HTSA1 bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 27000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+2.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRF7480MTRPBF irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRL7486MTRPBF IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF6668TRPBF pVersion=0046&contRep=ZT&docId=E21F6E04AA9E5EF1A303005056AB0C4F&compId=irf6668pbf.pdf?ci_sign=3d071b1127b1dfff4ca1aec60de8486f5a4ff2d4
IRF6668TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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IRF6613TRPBF pVersion=0046&contRep=ZT&docId=E21F68802DD922F1A303005056AB0C4F&compId=irf6613pbf.pdf?ci_sign=22b184a7d9530b239b01848c8503885fd8923f04
IRF6613TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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IRF6648TRPBF pVersion=0046&contRep=ZT&docId=E21F6D8D82FF2CF1A303005056AB0C4F&compId=irf6648pbf.pdf?ci_sign=09bf340e62947621a3eb9a51d35afb4ae0b9c410
IRF6648TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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AUIRF7640S2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D7480F1A6F5005056AB5A8F&compId=auirf7640s2.pdf?ci_sign=d080479f8227fc8010aaf755fcbe73634e14b94a
AUIRF7640S2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 30W
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AUIRF7647S2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D748EF1A6F5005056AB5A8F&compId=auirf7647s2.pdf?ci_sign=a5ade660db264cb9e00cb8ccb2dffd04e4723d6b
AUIRF7647S2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 41W
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AUIRF7648M2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D749CF1A6F5005056AB5A8F&compId=auirf7648m2.pdf?ci_sign=ebc60ccc8adf31a6563568cfeee5902d69161772
AUIRF7648M2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
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AUIRF7669L2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74B8F1A6F5005056AB5A8F&compId=auirf7669l2.pdf?ci_sign=dbff2b847d938d04165ecc80e0288b271c038e6f
AUIRF7669L2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 100W
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AUIRF7675M2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74C6F1A6F5005056AB5A8F&compId=auirf7675m2.pdf?ci_sign=6f2fdedd9b7a7dd5fc79b040865f7cc6be687d64
AUIRF7675M2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 45W
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AUIRF7736M2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74D4F1A6F5005056AB5A8F&compId=auirf7736m2.pdf?ci_sign=b40706946f99bbe0e7b0512c740cc99a0530a4b5
AUIRF7736M2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
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AUIRF7737L2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74E2F1A6F5005056AB5A8F&compId=auirf7737l2.pdf?ci_sign=988a0605716b6ae68df67a927a25574adeb3e3ad
AUIRF7737L2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 83W
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В кошику  од. на суму  грн.
AUIRF7739L2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74FEF1A6F5005056AB5A8F&compId=auirf7739l2.pdf?ci_sign=763f17a5c4d0c90cf8f3a4c554ade81af3e0c685
AUIRF7739L2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
товару немає в наявності
В кошику  од. на суму  грн.
AUIRL7732S2TR pVersion=0046&contRep=ZT&docId=E1C045A07B793EF1A6F5005056AB5A8F&compId=auirl7732s2.pdf?ci_sign=ddf47b1ea64ae3b106eec640a657904cc40ff659
AUIRL7732S2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 41W
Features of semiconductor devices: logic level
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В кошику  од. на суму  грн.
AUIRL7736M2TR pVersion=0046&contRep=ZT&docId=E1C045A07B794CF1A6F5005056AB5A8F&compId=auirl7736m2.pdf?ci_sign=396d2e157a61a6f71b207c711048dbabfc61ef07
AUIRL7736M2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
Features of semiconductor devices: logic level
товару немає в наявності
В кошику  од. на суму  грн.
IRF6617TRPBF pVersion=0046&contRep=ZT&docId=E21F68F6F3C254F1A303005056AB0C4F&compId=irf6617pbf.pdf?ci_sign=8194306b9a0254a0290e1c6c85b89e2daced3d6d
IRF6617TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6623TRPBF pVersion=0046&contRep=ZT&docId=E21F69BF922773F1A303005056AB0C4F&compId=irf6623pbf.pdf?ci_sign=7e47b28080f5bc09af2f5dfabdcf15cbcfcda1b6
IRF6623TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6646TRPBF pVersion=0046&contRep=ZT&docId=E21F6D6F02B060F1A303005056AB0C4F&compId=irf6646pbf.pdf?ci_sign=83a194730ab9f4171c6af53e4a964c5c99aadec6
IRF6646TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6674TRPBF pVersion=0046&contRep=ZT&docId=E21F6E21611C47F1A303005056AB0C4F&compId=irf6674pbf.pdf?ci_sign=6f30856429dd849e725522aa6baeff678ecc5240
IRF6674TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6715MTRPBF pVersion=0046&contRep=ZT&docId=E21F7007E134E9F1A303005056AB0C4F&compId=irf6715mpbf.pdf?ci_sign=62374627c1017a1a9ad461228f8c75cd0c4ca3e2
IRF6715MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6716MTRPBF pVersion=0046&contRep=ZT&docId=E21F7021DF830BF1A303005056AB0C4F&compId=irf6716mpbf.pdf?ci_sign=169aef872d10aacc80aeb938269d641f989a2ef6
IRF6716MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6785MTRPBF pVersion=0046&contRep=ZT&docId=E21F721B77381DF1A303005056AB0C4F&compId=irf6785mpbf.pdf?ci_sign=9ead012a52e6c003d2cb3151b6ca9ff5aeb45017
IRF6785MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 57W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6795MTRPBF pVersion=0046&contRep=ZT&docId=E21F723885ED80F1A303005056AB0C4F&compId=irf6795mpbf.pdf?ci_sign=9d49a0948566a3df84490265ddb6219a15d0ce6b
IRF6795MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 75W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6811STRPBF pVersion=0046&contRep=ZT&docId=E21F7282E16378F1A303005056AB0C4F&compId=irf6811spbf.pdf?ci_sign=579b5a75859bdda2e370556044bd3504e41a20aa
IRF6811STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 32W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6894MTRPBF pVersion=0046&contRep=ZT&docId=E21F72A548A092F1A303005056AB0C4F&compId=irf6894mpbf.pdf?ci_sign=eb0a6907cd34648584abc41f075c9b9488986d39
IRF6894MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 54W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6898MTRPBF pVersion=0046&contRep=ZT&docId=E21F72C0D51813F1A303005056AB0C4F&compId=irf6898mpbf.pdf?ci_sign=2cf3ed416c9acdf1e84616972f31edd8f6034727
IRF6898MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
товару немає в наявності
В кошику  од. на суму  грн.
IRF7739L1TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8A397ACBB5EA&compId=IRF7739L1TRPBF.pdf?ci_sign=42f6f850806d5dbb3ce2d0cdd11430ea04a209f9
IRF7739L1TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
товару немає в наявності
В кошику  од. на суму  грн.
IRF7739L2TRPBF pVersion=0046&contRep=ZT&docId=E221A96E6489E7F1A303005056AB0C4F&compId=irf7739l2pbf.pdf?ci_sign=296feb793da6921ebca5ab264bdfe2983eb7f134
IRF7739L2TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
товару немає в наявності
В кошику  од. на суму  грн.
IRF7749L2TRPBF pVersion=0046&contRep=ZT&docId=E221A98A20BC1FF1A303005056AB0C4F&compId=irf7749l2pbf.pdf?ci_sign=b464ed5cc7d209a4bc1050ee64b1542e1151909c
IRF7749L2TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF7759L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692
IRF7759L2TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Power dissipation: 125W
Case: DirectFET
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 200nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF7769L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA53F02E47F1A303005056AB0C4F&compId=irf7769l2pbf.pdf?ci_sign=5cd3eeb2ac76d76da1ad88b7a602e610094c74ab
IRF7769L2TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
товару немає в наявності
В кошику  од. на суму  грн.
IRF7779L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA743EF966F1A303005056AB0C4F&compId=irf7779l2pbf.pdf?ci_sign=a411caebdb5e453bbb838d0678c14cccf71cf252
IRF7779L2TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
товару немає в наявності
В кошику  од. на суму  грн.
IRF7946TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC97E68E7355EA&compId=IRF7946TRPBF.pdf?ci_sign=ac36c1ec84c1dbd734ca4b3ef349040e5869064e
IRF7946TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 96W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6645TRPBF pVersion=0046&contRep=ZT&docId=E21F6D4F04E802F1A303005056AB0C4F&compId=irf6645pbf.pdf?ci_sign=b9722bf4f481f3c294902eb315726445e6f9e24d
IRF6645TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
товару немає в наявності
В кошику  од. на суму  грн.
IRF6641TRPBF pVersion=0046&contRep=ZT&docId=E21F6CFED008FEF1A303005056AB0C4F&compId=irf6641pbf.pdf?ci_sign=3e43d1a3b768edd2c9fe2c68790af0399ca0d64e
IRF6641TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF7665S2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74AAF1A6F5005056AB5A8F&compId=auirf7665s2.pdf?ci_sign=2dfdc926c8068713a22a7ec5c3a3577b51d331dc
AUIRF7665S2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 30W
товару немає в наявності
В кошику  од. на суму  грн.
AUIRL7766M2TR pVersion=0046&contRep=ZT&docId=E1C045A07B795AF1A6F5005056AB5A8F&compId=auirl7766m2.pdf?ci_sign=4c325d859c0e4ada8427c9bfb0a836e4c3900005
AUIRL7766M2TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 62.5W
Features of semiconductor devices: logic level
товару немає в наявності
В кошику  од. на суму  грн.
IRF6216TRPBF pVersion=0046&contRep=ZT&docId=E21F672CDB9B16F1A303005056AB0C4F&compId=irf6216pbf.pdf?ci_sign=9ad0f60fd0f5dd2bab877d7a145bd99db3800a4b
IRF6216TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
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