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CY8C3866AXI-039 INFINEON TECHNOLOGIES Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Unclassified
Description: CY8C3866AXI-039
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
90+1659.42 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
CY8C3866PVI-021 INFINEON TECHNOLOGIES Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Unclassified
Description: CY8C3866PVI-021
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
30+1537.55 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPP220N25NFDAKSA1 IPP220N25NFDAKSA1 INFINEON TECHNOLOGIES IPP220N25NFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
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ETD540N22P60HPSA1 INFINEON TECHNOLOGIES ETD540N22P60_ETT540N22P60.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Gate current: 250mA
Max. forward voltage: 1.73V
Load current: 542A
Max. load current: 700A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 16.3kA
Case: BG-PB60ECO-1
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPP12CN10LGXKSA1 IPP12CN10LGXKSA1 INFINEON TECHNOLOGIES IPP12CN10LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 100V
Power dissipation: 125W
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BSS138IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
46+9.71 грн
68+6.07 грн
100+4.84 грн
250+3.61 грн
500+3.25 грн
1000+3.03 грн
3000+2.89 грн
Мінімальне замовлення: 46
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IRFR5505TRPBF IRFR5505TRPBF INFINEON TECHNOLOGIES irfr5505.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2964 шт:
термін постачання 21-30 дні (днів)
5+96.26 грн
10+47.89 грн
25+44.12 грн
100+38.95 грн
250+35.59 грн
500+33.13 грн
1000+30.51 грн
2000+28.05 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFB7546PBF IRFB7546PBF INFINEON TECHNOLOGIES IRFB7546PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
On-state resistance: 7.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 58nC
на замовлення 1285 шт:
термін постачання 21-30 дні (днів)
7+65.35 грн
9+47.56 грн
50+44.28 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IDW75D65D1XKSA1 INFINEON TECHNOLOGIES Infineon-IDW75D65D1-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a5670e9cd3eeb Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 75A; tube; Ifsm: 580A; TO247-3; 163W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 580A
Case: TO247-3
Max. forward voltage: 1.28V
Power dissipation: 163W
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IPB017N10N5LFATMA1 INFINEON TECHNOLOGIES Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
On-state resistance: 1.5mΩ
Drain current: 180A
Drain-source voltage: 100V
Power dissipation: 313W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 195nC
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IPB120N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 158W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: D2PAK; TO263
On-state resistance: 1.58mΩ
Mounting: SMD
Gate charge: 134nC
Kind of channel: enhancement
Application: automotive industry
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IPG20N04S4L11AATMA1 INFINEON TECHNOLOGIES IPG20N04S4L-11A_DS_1_0.pdf?fileId=5546d4614815da88014821772fae00b5 Category: Transistors - Unclassified
Description: IPG20N04S4L11AATMA1
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+41.77 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPB180P04P4L02ATMA2 INFINEON TECHNOLOGIES IPB180P04P4L02.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -140A; Idm: -720A; 150W
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -140A
Pulsed drain current: -720A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: -16...5V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel
Kind of channel: enhancement
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SPD04P10PGBTMA1 SPD04P10PGBTMA1 INFINEON TECHNOLOGIES SPD04P10PGBTMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Power dissipation: 38W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
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2EDF7275FXUMA1 2EDF7275FXUMA1 INFINEON TECHNOLOGIES 2EDF7xx5F_K_H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Type of integrated circuit: driver
Case: PG-DSO-16
Technology: EiceDRIVER™
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Number of channels: 2
Output current: -8...4A
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
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AUIRL1404ZSTRL AUIRL1404ZSTRL INFINEON TECHNOLOGIES auirl1404s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
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SPW35N60CFDFKSA1 INFINEON TECHNOLOGIES SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 34.1A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 34.1A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 212nC
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
30+606.72 грн
60+506.80 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPD50N06S214ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
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GS0650306LRMRXUSA1 INFINEON TECHNOLOGIES Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9 Category: SMD N channel transistors
Description: GS0650306LRMRXUSA1
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
250+622.61 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
IPB180N04S4H0ATMA1 IPB180N04S4H0ATMA1 INFINEON TECHNOLOGIES IPB180N04S4H0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Drain current: 180A
Drain-source voltage: 40V
Power dissipation: 250W
Technology: OptiMOS™ T2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 173nC
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CYPM1111-40LQXI INFINEON TECHNOLOGIES Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a Category: Integrated circuits - Unclassified
Description: CYPM1111-40LQXI
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BC860BE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
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CYPD3177-24LQXQT INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
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CYPD717140LQXQTXUMA1 INFINEON TECHNOLOGIES Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d Category: Unclassified
Description: CYPD717140LQXQTXUMA1
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CYPD717140LQXQXQLA1 INFINEON TECHNOLOGIES Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d Category: Unclassified
Description: CYPD717140LQXQXQLA1
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BC850BE6327HTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 200
Mounting: SMD
Frequency: 250MHz
на замовлення 21000 шт:
термін постачання 21-30 дні (днів)
15000+2.65 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BCW68FE6327HTSA1 INFINEON TECHNOLOGIES bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Current gain: 100
Mounting: SMD
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)
12000+3.52 грн
Мінімальне замовлення: 12000
В кошику  од. на суму  грн.
DDB2U60N12W1RFB11BPSA1 INFINEON TECHNOLOGIES Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183 Category: Unclassified
Description: DDB2U60N12W1RFB11BPSA1
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
24+8371.28 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
S26HL01GTFPBHB020 INFINEON TECHNOLOGIES Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HL01GTFPBHB030 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HL01GTFPBHI030 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HL02GTFGBHM040 INFINEON TECHNOLOGIES Infineon-S26HS02GT_S26HS04GT_S26HL02GT_S26HL04GT_2Gb_4Gb_SEMPER_Flash_HYPERBUS_interface_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1bcc82c6e Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 133MHz
Case: BGA24
Memory: 2Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HL02GTFGBHM043 INFINEON TECHNOLOGIES Infineon-S26HS02GT_S26HS04GT_S26HL02GT_S26HL04GT_2Gb_4Gb_SEMPER_Flash_HYPERBUS_interface_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1bcc82c6e Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 133MHz
Case: BGA24
Memory: 2Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
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S26HL512TFPBHI000 INFINEON TECHNOLOGIES Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HL512TFPBHI010 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HL512TFPBHM010 INFINEON TECHNOLOGIES Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HL512TFPBHM013 INFINEON TECHNOLOGIES Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
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S26HS01GTGABHA030 INFINEON TECHNOLOGIES Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 200MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HS512TGABHI000 INFINEON TECHNOLOGIES Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 200MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HS512TGABHI010 INFINEON TECHNOLOGIES Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 200MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
товару немає в наявності
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S26HS512TGABHM010 INFINEON TECHNOLOGIES Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 200MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KL128SDABHB023 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 128Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
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S26KL128SDABHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 128Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KL256SDABHB020 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 256Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KL256SDABHB023 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 256Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
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S26KL256SDABHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 256Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KL512SDABHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KL512SDABHI030 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KL512SDABHV023 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
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S26KS128SDPBHA020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: FBGA24
Memory: 128Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KS128SDPBHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: FBGA24
Memory: 128Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KS128SDPBHV020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: FBGA24
Memory: 128Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KS256SDPBHA020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: FBGA24
Memory: 256Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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BSS169H6906XTSA1 INFINEON TECHNOLOGIES INFNS19228-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Gate charge: 2.8nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 2.9Ω
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
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BCP5116H6327XTSA1 INFINEON TECHNOLOGIES bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 708000 шт:
термін постачання 21-30 дні (днів)
4000+9.89 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IDW40G65C5BXKSA2 IDW40G65C5BXKSA2 INFINEON TECHNOLOGIES IDW40G65C5B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
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PVA3054NPBF INFINEON TECHNOLOGIES pva30n.pdf?fileId=5546d462533600a4015356839c762923 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PVA; THT; DIP8
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PVA
Mounting: THT
Case: DIP8
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)
50+385.93 грн
100+322.28 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PVU414SPBF INFINEON TECHNOLOGIES pvu414.pdf?fileId=5546d462533600a4015356844deb2976 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
Mounting: SMT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1400 шт:
термін постачання 21-30 дні (днів)
50+421.26 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PVA3054NSPBF INFINEON TECHNOLOGIES pva30n.pdf?fileId=5546d462533600a4015356839c762923 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.25V DC
Control current max.: 25mA
Max. operating current: 50mA
Manufacturer series: PVA
Mounting: SMT
Case: SMD8
Body dimensions: 9.4x6.5x3.9mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 326 шт:
термін постачання 21-30 дні (днів)
50+466.30 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPD30N06S2L23ATMA3 INFINEON TECHNOLOGIES Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Application: automotive industry
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 30A
Drain-source voltage: 55V
Gate charge: 33nC
On-state resistance: 15.9mΩ
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CY8C3866AXI-039 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C3866AXI-039
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
90+1659.42 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
CY8C3866PVI-021 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C3866PVI-021
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+1537.55 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPP220N25NFDAKSA1 IPP220N25NFD-DTE.pdf
IPP220N25NFDAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
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ETD540N22P60HPSA1 ETD540N22P60_ETT540N22P60.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Gate current: 250mA
Max. forward voltage: 1.73V
Load current: 542A
Max. load current: 700A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 16.3kA
Case: BG-PB60ECO-1
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPP12CN10LGXKSA1 IPP12CN10LG-DTE.pdf
IPP12CN10LGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 100V
Power dissipation: 125W
товару немає в наявності
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BSS138IXTSA1 Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.71 грн
68+6.07 грн
100+4.84 грн
250+3.61 грн
500+3.25 грн
1000+3.03 грн
3000+2.89 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
IRFR5505TRPBF description irfr5505.pdf
IRFR5505TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2964 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+96.26 грн
10+47.89 грн
25+44.12 грн
100+38.95 грн
250+35.59 грн
500+33.13 грн
1000+30.51 грн
2000+28.05 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFB7546PBF IRFB7546PBF.pdf
IRFB7546PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
On-state resistance: 7.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 58nC
на замовлення 1285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.35 грн
9+47.56 грн
50+44.28 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IDW75D65D1XKSA1 Infineon-IDW75D65D1-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a5670e9cd3eeb
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 75A; tube; Ifsm: 580A; TO247-3; 163W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 580A
Case: TO247-3
Max. forward voltage: 1.28V
Power dissipation: 163W
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IPB017N10N5LFATMA1 Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
On-state resistance: 1.5mΩ
Drain current: 180A
Drain-source voltage: 100V
Power dissipation: 313W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 195nC
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IPB120N04S402ATMA1 Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 158W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: D2PAK; TO263
On-state resistance: 1.58mΩ
Mounting: SMD
Gate charge: 134nC
Kind of channel: enhancement
Application: automotive industry
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IPG20N04S4L11AATMA1 IPG20N04S4L-11A_DS_1_0.pdf?fileId=5546d4614815da88014821772fae00b5
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPG20N04S4L11AATMA1
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+41.77 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPB180P04P4L02ATMA2 IPB180P04P4L02.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -140A; Idm: -720A; 150W
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -140A
Pulsed drain current: -720A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: -16...5V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel
Kind of channel: enhancement
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В кошику  од. на суму  грн.
SPD04P10PGBTMA1 SPD04P10PGBTMA1-dte.pdf
SPD04P10PGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Power dissipation: 38W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
товару немає в наявності
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2EDF7275FXUMA1 2EDF7xx5F_K_H.pdf
2EDF7275FXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Type of integrated circuit: driver
Case: PG-DSO-16
Technology: EiceDRIVER™
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Number of channels: 2
Output current: -8...4A
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
товару немає в наявності
В кошику  од. на суму  грн.
AUIRL1404ZSTRL auirl1404s.pdf
AUIRL1404ZSTRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
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SPW35N60CFDFKSA1 SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 34.1A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 34.1A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 212nC
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+606.72 грн
60+506.80 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPD50N06S214ATMA2 Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
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GS0650306LRMRXUSA1 Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: GS0650306LRMRXUSA1
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
250+622.61 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
IPB180N04S4H0ATMA1 IPB180N04S4H0.pdf
IPB180N04S4H0ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Drain current: 180A
Drain-source voltage: 40V
Power dissipation: 250W
Technology: OptiMOS™ T2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 173nC
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CYPM1111-40LQXI Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a
Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CYPM1111-40LQXI
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BC860BE6327HTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
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CYPD3177-24LQXQT Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
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CYPD717140LQXQTXUMA1 Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CYPD717140LQXQTXUMA1
товару немає в наявності
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CYPD717140LQXQXQLA1 Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CYPD717140LQXQXQLA1
товару немає в наявності
В кошику  од. на суму  грн.
BC850BE6327HTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 200
Mounting: SMD
Frequency: 250MHz
на замовлення 21000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15000+2.65 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BCW68FE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Current gain: 100
Mounting: SMD
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12000+3.52 грн
Мінімальне замовлення: 12000
В кошику  од. на суму  грн.
DDB2U60N12W1RFB11BPSA1 Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: DDB2U60N12W1RFB11BPSA1
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+8371.28 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
S26HL01GTFPBHB020 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
товару немає в наявності
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S26HL01GTFPBHB030
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HL01GTFPBHI030
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
товару немає в наявності
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S26HL02GTFGBHM040 Infineon-S26HS02GT_S26HS04GT_S26HL02GT_S26HL04GT_2Gb_4Gb_SEMPER_Flash_HYPERBUS_interface_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1bcc82c6e
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 133MHz
Case: BGA24
Memory: 2Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
товару немає в наявності
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S26HL02GTFGBHM043 Infineon-S26HS02GT_S26HS04GT_S26HL02GT_S26HL04GT_2Gb_4Gb_SEMPER_Flash_HYPERBUS_interface_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1bcc82c6e
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 133MHz
Case: BGA24
Memory: 2Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
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S26HL512TFPBHI000 Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
товару немає в наявності
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S26HL512TFPBHI010
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
товару немає в наявності
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S26HL512TFPBHM010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
товару немає в наявності
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S26HL512TFPBHM013 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
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S26HS01GTGABHA030 Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 200MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HS512TGABHI000 Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 200MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26HS512TGABHI010 Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 200MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
товару немає в наявності
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S26HS512TGABHM010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Operating voltage: 1.7...2V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 200MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KL128SDABHB023 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 128Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
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S26KL128SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 128Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KL256SDABHB020
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 256Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KL256SDABHB023 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 256Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
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В кошику  од. на суму  грн.
S26KL256SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 256Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
товару немає в наявності
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S26KL512SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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В кошику  од. на суму  грн.
S26KL512SDABHI030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S26KL512SDABHV023 download
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 100MHz
Case: FBGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
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S26KS128SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: FBGA24
Memory: 128Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KS128SDPBHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: FBGA24
Memory: 128Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KS128SDPBHV020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: FBGA24
Memory: 128Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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S26KS256SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Operating voltage: 1.7...1.95V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: FBGA24
Memory: 256Mb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
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BSS169H6906XTSA1 INFNS19228-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Gate charge: 2.8nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 2.9Ω
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
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BCP5116H6327XTSA1 bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 708000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+9.89 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IDW40G65C5BXKSA2 IDW40G65C5B.pdf
IDW40G65C5BXKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
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PVA3054NPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PVA; THT; DIP8
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PVA
Mounting: THT
Case: DIP8
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+385.93 грн
100+322.28 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PVU414SPBF pvu414.pdf?fileId=5546d462533600a4015356844deb2976
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
Mounting: SMT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1400 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+421.26 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PVA3054NSPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.25V DC
Control current max.: 25mA
Max. operating current: 50mA
Manufacturer series: PVA
Mounting: SMT
Case: SMD8
Body dimensions: 9.4x6.5x3.9mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 326 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+466.30 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPD30N06S2L23ATMA3 Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Application: automotive industry
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 30A
Drain-source voltage: 55V
Gate charge: 33nC
On-state resistance: 15.9mΩ
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