Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149346) > Сторінка 2488 з 2490
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPN50R950CEATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223 Case: PG-SOT223 Mounting: SMD Technology: CoolMOS™ CE Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 10.5nC On-state resistance: 0.95Ω Drain current: 4.2A Power dissipation: 5W Gate-source voltage: ±20V Drain-source voltage: 500V |
на замовлення 2799 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
TLF80511TFV50ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.4A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 3.3...40V |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
BSZ0506NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Technology: OptiMOS™ 5 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 4.4mΩ Drain current: 40A Power dissipation: 27W Gate-source voltage: ±20V Drain-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
IPD50R520CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Case: PG-TO252-3 Mounting: SMD Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.52Ω Drain current: 7.1A Power dissipation: 66W Gate-source voltage: ±20V Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
BSC0501NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Technology: OptiMOS™ 5 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.9mΩ Drain current: 100A Power dissipation: 50W Gate-source voltage: ±20V Drain-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
BSC0503NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Technology: OptiMOS™ 5 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.9mΩ Drain current: 100A Power dissipation: 50W Gate-source voltage: ±20V Drain-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
BSC0504NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Technology: OptiMOS™ 5 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 3.7mΩ Drain current: 64A Power dissipation: 30W Gate-source voltage: ±20V Drain-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BSZ0502NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() +1 |
BTS500101TAEATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Output current: 40A Case: PG-TO263-7-10 Mounting: SMD Technology: Power PROFET Kind of integrated circuit: high-side Kind of output: N-Channel On-state resistance: 1.6mΩ Number of channels: 1 Supply voltage: 8...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPB50R140CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.14Ω Drain current: 3.1A Power dissipation: 25W Gate-source voltage: ±20V Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPB50R199CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.199Ω Drain current: 17A Power dissipation: 139W Gate-source voltage: ±20V Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPB50R299CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.299Ω Drain current: 12A Power dissipation: 104W Gate-source voltage: ±20V Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
BCW60BE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 1311 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
1EDC40I12AHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A Type of integrated circuit: driver Technology: EiceDRIVER™ Mounting: SMD Integrated circuit features: galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver Kind of package: reel; tape Topology: single transistor Output current: -4...4A Number of channels: 1 Supply voltage: 3.1...17V; 13...35V Voltage class: 600/650/1200V Case: PG-DSO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPB042N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IRFHS8342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 9.9A Power dissipation: 2.1W Case: PQFN2X2 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPB80N08S2L07ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 183nC Kind of channel: enhancement Technology: OptiMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IAUA180N08S5N026AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Pulsed drain current: 546A Power dissipation: 179W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BSC076N06NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPW80R280P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO247-3; ESD Mounting: THT Case: PG-TO247-3 Type of transistor: N-MOSFET Version: ESD Kind of channel: enhancement Drain current: 10.6A Gate-source voltage: ±20V Power dissipation: 101W Technology: CoolMOS™ P7 Drain-source voltage: 800V Gate charge: 36nC Polarisation: unipolar Kind of package: tube On-state resistance: 0.28Ω |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
TT251N16KOFHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: thyristor Gate current: 300mA Max. forward voltage: 1.4V Load current: 251A Max. off-state voltage: 1.6kV Max. forward impulse current: 9.1kA Case: BG-PB50-1 |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
IPD30N03S4L09ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 9mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
BSZ130N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Power dissipation: 25W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
BSC030N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 98A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
BSC030N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
BSZ130N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 31A Power dissipation: 25W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPD30N03S4L14ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 30V; 30A; 31W; DPAK; automotive industry Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 30V Drain current: 30A Power dissipation: 31W Case: DPAK Gate-source voltage: 16V On-state resistance: 11.2mΩ Mounting: SMD Gate charge: 14nC Kind of channel: enhancement Electrical mounting: SMT Application: automotive industry Technology: MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IPD030N03LF2SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IPD030N03LF2SATMA1 |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
IRSM836-024MATR | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A Type of integrated circuit: driver Topology: MOSFET three-phase bridge Kind of integrated circuit: 3-phase motor controller; IPM Case: PQFN12X12 Output current: 2A Mounting: SMD Operating temperature: -40...150°C Operating voltage: 11.5...18.5/8.9...200V DC Power dissipation: 16W Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality Protection: anti-overload OPP; undervoltage UVP Technology: iMOTION™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IRL1404PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 93.3nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FS820R08A6P2LBBPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 750V Collector current: 450A Case: AG-HYBRIDD-1 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 1.64kA Power dissipation: 714W Technology: HybridPACK™ Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ITS4130QEPDXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape Operating temperature: -40...150°C Kind of integrated circuit: high-side Case: PG-TSDSO-14 Technology: Industrial PROFET Kind of output: N-Channel Mounting: SMD Kind of package: reel; tape Turn-off time: 75µs Turn-on time: 75µs On-state resistance: 0.13Ω Number of channels: 4 Output current: 1.25A Supply voltage: 5...45V DC Power dissipation: 1.8W Type of integrated circuit: power switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CY8C4024AZI-S413 | INFINEON TECHNOLOGIES |
![]() Description: IC: PSoC microcontroller; Core: 32-bit Kind of core: 32-bit Type of integrated circuit: PSoC microcontroller |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
CY8C4024LQI-S413T | INFINEON TECHNOLOGIES |
![]() Description: IC: PSoC microcontroller; Core: 32-bit Kind of core: 32-bit Type of integrated circuit: PSoC microcontroller |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
CY8C4025AZI-S413 | INFINEON TECHNOLOGIES |
![]() Description: IC: PSoC microcontroller; Core: 32-bit Kind of core: 32-bit Type of integrated circuit: PSoC microcontroller |
на замовлення 46500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
CY8C4025AZQ-S413 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; 24MHz; LQFP48; Features: PoR; Core: 32-bit Operating temperature: -40...105°C Kind of architecture: Cortex M0+ Case: LQFP48 Mounting: SMD Number of 16bit timers: 5 Number of inputs/outputs: 36 Clock frequency: 24MHz Kind of core: 32-bit Type of integrated circuit: ARM microcontroller Integrated circuit features: PoR |
на замовлення 1600 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
CY8C4025LQI-S413T | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller |
на замовлення 62500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
CY8C4125AZI-S413 | INFINEON TECHNOLOGIES |
![]() Description: CY8C4125AZI-S413 |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
CY8C4745AZI-S413 | INFINEON TECHNOLOGIES |
![]() Description: IC: PSoC microcontroller; 48MHz; Core: 32-bit Mounting: SMD Clock frequency: 48MHz Kind of core: 32-bit Type of integrated circuit: PSoC microcontroller |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
BSC320N20NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Gate-source voltage: ±20V On-state resistance: 32mΩ Drain current: 36A Power dissipation: 125W Drain-source voltage: 200V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPA320N20NM3SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP Case: TO220FP Mounting: THT Gate-source voltage: ±20V On-state resistance: 32mΩ Drain current: 19A Power dissipation: 38W Pulsed drain current: 104A Drain-source voltage: 200V Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPB320N20N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Gate-source voltage: ±20V On-state resistance: 32mΩ Drain current: 34A Power dissipation: 136W Drain-source voltage: 200V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
IPI320N20N3GAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3 Case: PG-TO262-3 Mounting: THT Gate-source voltage: ±20V On-state resistance: 32mΩ Drain current: 34A Power dissipation: 136W Drain-source voltage: 200V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BSC220N20NSFDATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IPD320N20N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; DPAK; SMT Case: DPAK Mounting: SMD Electrical mounting: SMT Gate-source voltage: 20V Gate charge: 29nC On-state resistance: 27mΩ Drain current: 34A Power dissipation: 136W Drain-source voltage: 200V Kind of channel: enhancement Technology: MOSFET Polarisation: N Type of transistor: N-MOSFET |
на замовлення 7500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
1EDI20N12AFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8 Technology: EiceDRIVER™; GaN Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Voltage class: 1.2kV Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Topology: single transistor Output current: -2...2A Number of channels: 1 Supply voltage: 3.1...17V; 13...35V Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IGOT60R070D1AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Case: PG-DSO-20 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhancement Gate current: 20mA Power dissipation: 125W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
IGT60R070D1ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Case: PG-HSOF-8-3 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhancement Gate current: 20mA Power dissipation: 125W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
S25FL127SABMFB101 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: tube Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
IPB108N15N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
ITS711L1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.7A Number of channels: 4 Mounting: SMD Case: DSO20 Output voltage: 2...4V Technology: Industrial PROFET Kind of output: N-Channel Supply voltage: 5...34V DC |
на замовлення 396 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BSP77E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Output voltage: 42V Technology: HITFET® Kind of output: N-Channel |
на замовлення 3044 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
IPA60R280P7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 600V; 12A; 24W; TO220FP; SMT Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 12A Power dissipation: 24W Case: TO220FP Gate-source voltage: 20V On-state resistance: 214mΩ Mounting: THT Gate charge: 18nC Kind of channel: enhancement Electrical mounting: SMT Technology: MOSFET |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IPA60R600P7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 6A Power dissipation: 21W Case: TO220FP Gate-source voltage: 20V On-state resistance: 0.49Ω Mounting: THT Gate charge: 9nC Kind of channel: enhancement Electrical mounting: SMT Technology: MOSFET |
на замовлення 454 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IPA90R500C3XKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 900V; 11A; 34W; TO220FP Type of transistor: N-MOSFET Drain-source voltage: 900V Drain current: 11A Power dissipation: 34W Case: TO220FP Gate-source voltage: 20V Mounting: THT Gate charge: 68nC Kind of channel: enhancement Technology: MOSFET |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IPA60R1K0CEXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 6.8A Power dissipation: 26W Case: TO220FP Gate-source voltage: 20V On-state resistance: 860mΩ Mounting: THT Gate charge: 13nC Kind of channel: enhancement Technology: MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IPA65R150CFDXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 650V; 22.4A; 34.7W; TO220FP Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 22.4A Power dissipation: 34.7W Case: TO220FP Gate-source voltage: 20V Mounting: THT Gate charge: 86nC Kind of channel: enhancement Technology: MOSFET |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IPA65R400CEXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 15.1A Power dissipation: 31W Case: TO220FP Gate-source voltage: 20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 39nC Kind of channel: enhancement Technology: MOSFET |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IPA65R1K0CEXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 650V; 7.2A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 7.2A Power dissipation: 68W Case: TO220FP Gate-source voltage: 20V On-state resistance: 860mΩ Mounting: THT Gate charge: 15.3nC Kind of channel: enhancement Technology: MOSFET |
на замовлення 650 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
IRS2308STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
IPN50R950CEATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10.5nC
On-state resistance: 0.95Ω
Drain current: 4.2A
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10.5nC
On-state resistance: 0.95Ω
Drain current: 4.2A
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 500V
на замовлення 2799 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.99 грн |
25+ | 24.15 грн |
50+ | 18.68 грн |
137+ | 17.66 грн |
TLF80511TFV50ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...40V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...40V
на замовлення 191 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 91.23 грн |
10+ | 61.75 грн |
18+ | 52.25 грн |
49+ | 49.88 грн |
BSZ0506NSATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4.4mΩ
Drain current: 40A
Power dissipation: 27W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4.4mΩ
Drain current: 40A
Power dissipation: 27W
Gate-source voltage: ±20V
Drain-source voltage: 30V
товару немає в наявності
В кошику
од. на суму грн.
IPD50R520CPATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.52Ω
Drain current: 7.1A
Power dissipation: 66W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.52Ω
Drain current: 7.1A
Power dissipation: 66W
Gate-source voltage: ±20V
Drain-source voltage: 500V
товару немає в наявності
В кошику
од. на суму грн.
BSC0501NSIATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Drain current: 100A
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Drain current: 100A
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 30V
товару немає в наявності
В кошику
од. на суму грн.
BSC0503NSIATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Drain current: 100A
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Drain current: 100A
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 30V
товару немає в наявності
В кошику
од. на суму грн.
BSC0504NSIATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Drain current: 64A
Power dissipation: 30W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Drain current: 64A
Power dissipation: 30W
Gate-source voltage: ±20V
Drain-source voltage: 30V
товару немає в наявності
В кошику
од. на суму грн.
BSZ0502NSIATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
товару немає в наявності
В кошику
од. на суму грн.
BTS500101TAEATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Output current: 40A
Case: PG-TO263-7-10
Mounting: SMD
Technology: Power PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
On-state resistance: 1.6mΩ
Number of channels: 1
Supply voltage: 8...18V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Output current: 40A
Case: PG-TO263-7-10
Mounting: SMD
Technology: Power PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
On-state resistance: 1.6mΩ
Number of channels: 1
Supply voltage: 8...18V DC
товару немає в наявності
В кошику
од. на суму грн.
IPB50R140CPATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.14Ω
Drain current: 3.1A
Power dissipation: 25W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.14Ω
Drain current: 3.1A
Power dissipation: 25W
Gate-source voltage: ±20V
Drain-source voltage: 500V
товару немає в наявності
В кошику
од. на суму грн.
IPB50R199CPATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.199Ω
Drain current: 17A
Power dissipation: 139W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.199Ω
Drain current: 17A
Power dissipation: 139W
Gate-source voltage: ±20V
Drain-source voltage: 500V
товару немає в наявності
В кошику
од. на суму грн.
IPB50R299CPATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.299Ω
Drain current: 12A
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.299Ω
Drain current: 12A
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 500V
товару немає в наявності
В кошику
од. на суму грн.
BCW60BE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1311 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
143+ | 2.98 грн |
179+ | 2.22 грн |
216+ | 1.84 грн |
243+ | 1.63 грн |
262+ | 1.51 грн |
500+ | 1.44 грн |
746+ | 1.25 грн |
1EDC40I12AHXUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Kind of package: reel; tape
Topology: single transistor
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Case: PG-DSO-8
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Kind of package: reel; tape
Topology: single transistor
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Case: PG-DSO-8
товару немає в наявності
В кошику
од. на суму грн.
IPB042N10N3GATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRFHS8342TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 9.9A
Power dissipation: 2.1W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 9.9A
Power dissipation: 2.1W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IPB80N08S2L07ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhancement
Technology: OptiMOS™
товару немає в наявності
В кошику
од. на суму грн.
IAUA180N08S5N026AUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику
од. на суму грн.
BSC076N06NS3GATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IPW80R280P7XKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO247-3; ESD
Mounting: THT
Case: PG-TO247-3
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 101W
Technology: CoolMOS™ P7
Drain-source voltage: 800V
Gate charge: 36nC
Polarisation: unipolar
Kind of package: tube
On-state resistance: 0.28Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO247-3; ESD
Mounting: THT
Case: PG-TO247-3
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 101W
Technology: CoolMOS™ P7
Drain-source voltage: 800V
Gate charge: 36nC
Polarisation: unipolar
Kind of package: tube
On-state resistance: 0.28Ω
на замовлення 98 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 237.88 грн |
3+ | 209.80 грн |
TT251N16KOFHPSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 300mA
Max. forward voltage: 1.4V
Load current: 251A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.1kA
Case: BG-PB50-1
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 300mA
Max. forward voltage: 1.4V
Load current: 251A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.1kA
Case: BG-PB50-1
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 15760.61 грн |
IPD30N03S4L09ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
товару немає в наявності
В кошику
од. на суму грн.
BSZ130N03LSGATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику
од. на суму грн.
BSC030N03LSGATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику
од. на суму грн.
BSC030N03MSGATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику
од. на суму грн.
BSZ130N03MSGATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику
од. на суму грн.
IPD30N03S4L14ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 30A; 31W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 31W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 11.2mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 30A; 31W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 31W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 11.2mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 20.21 грн |
IPD030N03LF2SATMA1 |
![]() |
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2000+ | 27.88 грн |
IRSM836-024MATR |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PQFN12X12
Output current: 2A
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 11.5...18.5/8.9...200V DC
Power dissipation: 16W
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: iMOTION™
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PQFN12X12
Output current: 2A
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 11.5...18.5/8.9...200V DC
Power dissipation: 16W
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: iMOTION™
товару немає в наявності
В кошику
од. на суму грн.
IRL1404PBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 93.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 93.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
FS820R08A6P2LBBPSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 750V
Collector current: 450A
Case: AG-HYBRIDD-1
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 1.64kA
Power dissipation: 714W
Technology: HybridPACK™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 750V
Collector current: 450A
Case: AG-HYBRIDD-1
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 1.64kA
Power dissipation: 714W
Technology: HybridPACK™
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
ITS4130QEPDXUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Operating temperature: -40...150°C
Kind of integrated circuit: high-side
Case: PG-TSDSO-14
Technology: Industrial PROFET
Kind of output: N-Channel
Mounting: SMD
Kind of package: reel; tape
Turn-off time: 75µs
Turn-on time: 75µs
On-state resistance: 0.13Ω
Number of channels: 4
Output current: 1.25A
Supply voltage: 5...45V DC
Power dissipation: 1.8W
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Operating temperature: -40...150°C
Kind of integrated circuit: high-side
Case: PG-TSDSO-14
Technology: Industrial PROFET
Kind of output: N-Channel
Mounting: SMD
Kind of package: reel; tape
Turn-off time: 75µs
Turn-on time: 75µs
On-state resistance: 0.13Ω
Number of channels: 4
Output current: 1.25A
Supply voltage: 5...45V DC
Power dissipation: 1.8W
Type of integrated circuit: power switch
товару немає в наявності
В кошику
од. на суму грн.
CY8C4024AZI-S413 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
на замовлення 250 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
250+ | 174.79 грн |
CY8C4024LQI-S413T |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 147.50 грн |
CY8C4025AZI-S413 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
на замовлення 46500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
250+ | 190.13 грн |
CY8C4025AZQ-S413 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 24MHz; LQFP48; Features: PoR; Core: 32-bit
Operating temperature: -40...105°C
Kind of architecture: Cortex M0+
Case: LQFP48
Mounting: SMD
Number of 16bit timers: 5
Number of inputs/outputs: 36
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Integrated circuit features: PoR
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 24MHz; LQFP48; Features: PoR; Core: 32-bit
Operating temperature: -40...105°C
Kind of architecture: Cortex M0+
Case: LQFP48
Mounting: SMD
Number of 16bit timers: 5
Number of inputs/outputs: 36
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Integrated circuit features: PoR
на замовлення 1600 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
250+ | 86.11 грн |
CY8C4025LQI-S413T |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
на замовлення 62500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 184.17 грн |
CY8C4125AZI-S413 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C4125AZI-S413
Category: Infineon Technologies microcontrollers
Description: CY8C4125AZI-S413
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
250+ | 209.74 грн |
CY8C4745AZI-S413 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; Core: 32-bit
Mounting: SMD
Clock frequency: 48MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; Core: 32-bit
Mounting: SMD
Clock frequency: 48MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
250+ | 325.70 грн |
BSC320N20NS3GATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 36A
Power dissipation: 125W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 36A
Power dissipation: 125W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
IPA320N20NM3SXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 19A
Power dissipation: 38W
Pulsed drain current: 104A
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 19A
Power dissipation: 38W
Pulsed drain current: 104A
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
IPB320N20N3GATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
IPI320N20N3GAKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
BSC220N20NSFDATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 222.53 грн |
IPD320N20N3GATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; DPAK; SMT
Case: DPAK
Mounting: SMD
Electrical mounting: SMT
Gate-source voltage: 20V
Gate charge: 29nC
On-state resistance: 27mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; DPAK; SMT
Case: DPAK
Mounting: SMD
Electrical mounting: SMT
Gate-source voltage: 20V
Gate charge: 29nC
On-state resistance: 27mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 108.28 грн |
1EDI20N12AFXUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику
од. на суму грн.
IGOT60R070D1AUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
товару немає в наявності
В кошику
од. на суму грн.
IGT60R070D1ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
товару немає в наявності
В кошику
од. на суму грн.
S25FL127SABMFB101 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Application: automotive
товару немає в наявності
В кошику
од. на суму грн.
IPB108N15N3GATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
ITS711L1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Mounting: SMD
Case: DSO20
Output voltage: 2...4V
Technology: Industrial PROFET
Kind of output: N-Channel
Supply voltage: 5...34V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Mounting: SMD
Case: DSO20
Output voltage: 2...4V
Technology: Industrial PROFET
Kind of output: N-Channel
Supply voltage: 5...34V DC
на замовлення 396 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 461.27 грн |
5+ | 217.72 грн |
12+ | 205.85 грн |
BSP77E6433 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Output voltage: 42V
Technology: HITFET®
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Output voltage: 42V
Technology: HITFET®
Kind of output: N-Channel
на замовлення 3044 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 192.69 грн |
10+ | 115.59 грн |
15+ | 64.13 грн |
40+ | 60.96 грн |
2000+ | 58.59 грн |
IPA60R280P7SXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 12A; 24W; TO220FP; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 214mΩ
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 12A; 24W; TO220FP; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 214mΩ
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 48.26 грн |
IPA60R600P7SXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 9nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 9nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
на замовлення 454 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 24.90 грн |
IPA90R500C3XKSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
Technology: MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 144.94 грн |
IPA60R1K0CEXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 13nC
Kind of channel: enhancement
Technology: MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 13nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 24.56 грн |
IPA65R150CFDXKSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 650V; 22.4A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 34.7W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 86nC
Kind of channel: enhancement
Technology: MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 650V; 22.4A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 34.7W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 86nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 178.20 грн |
200+ | 148.84 грн |
IPA65R400CEXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Technology: MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 57.98 грн |
IPA65R1K0CEXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 7.2A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 7.2A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 15.3nC
Kind of channel: enhancement
Technology: MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 7.2A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 7.2A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 15.3nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 650 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 41.44 грн |
IRS2308STRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 48.60 грн |