Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149360) > Сторінка 2485 з 2490
Фото | Назва | Виробник | Інформація |
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CY62177EV30LL-55BAXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 55ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CY62177EV18LL-70BAXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 70ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.65...2.25V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CY62177EV30LL-55ZXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAW101E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape Power dissipation: 0.35W Case: SOT143 Mounting: SMD Kind of package: reel; tape Type of diode: switching Reverse recovery time: 1µs Load current: 0.25A Max. off-state voltage: 300V Semiconductor structure: double independent |
на замовлення 1620 шт: термін постачання 21-30 дні (днів) |
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BFR380L3E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1 Type of transistor: NPN Kind of transistor: RF Mounting: SMD Case: TSLP-3-1 Collector current: 80mA Power dissipation: 0.38W Collector-emitter voltage: 15V Polarisation: bipolar Frequency: 14GHz Kind of package: reel; tape |
на замовлення 11862 шт: термін постачання 21-30 дні (днів) |
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BFR380FH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3 Type of transistor: NPN Kind of transistor: RF Mounting: SMD Case: TSFP-3 Collector current: 80mA Power dissipation: 0.38W Collector-emitter voltage: 15V Polarisation: bipolar Frequency: 14GHz Kind of package: reel; tape |
на замовлення 5595 шт: термін постачання 21-30 дні (днів) |
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BFR380L3E6327XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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BTS3046SDLATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 46mΩ Operating temperature: -40...150°C Technology: HITFET® Output voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BTS3046SDRATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; DPAK; 2÷10V Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DPAK On-state resistance: 46mΩ Active logical level: low Operating temperature: -40...150°C Supply voltage: 2...10V Integrated circuit features: thermal protection Application: automotive industry |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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BSP297H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223 Mounting: SMD Drain-source voltage: 200V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SIPMOS™ Case: SOT223 On-state resistance: 1.8Ω Power dissipation: 1.8W Drain current: 0.66A Gate-source voltage: ±20V |
на замовлення 643 шт: термін постачання 21-30 дні (днів) |
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BSL316CH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W Type of transistor: N/P-MOSFET Technology: OptiMOS™ 2 Case: PG-TSOP-6 Mounting: SMD Polarisation: unipolar On-state resistance: 0.191/0.177Ω Power dissipation: 0.5W Drain current: 1.4/-1.5A Gate-source voltage: ±20V Drain-source voltage: 30/-30V Kind of channel: enhancement |
на замовлення 1532 шт: термін постачання 21-30 дні (днів) |
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BSP171PL6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.7A Power dissipation: 1.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SPD04P10PLGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: -100V Drain current: -4.2A On-state resistance: 0.85Ω Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 38W Case: PG-TO252-3 Kind of channel: enhancement Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SPD04P10PGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: -100V Drain current: -4A On-state resistance: 1Ω Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 38W Case: PG-TO252-3 Kind of channel: enhancement Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SPD15P10PGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.24Ω Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 128W Case: PG-TO252-3 Kind of channel: enhancement Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TLE4251DATMA1 | INFINEON TECHNOLOGIES |
![]() Description: TLE4251DATMA1 |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IPA70R600P7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 700V; 8.5A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 700V Drain current: 8.5A Power dissipation: 25W Case: TO220FP Gate-source voltage: 16V On-state resistance: 0.49Ω Mounting: THT Gate charge: 10.5nC Kind of channel: enhancement Technology: MOSFET |
на замовлення 770 шт: термін постачання 21-30 дні (днів) |
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BAS170WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW Power dissipation: 0.25W Case: SOD323 Mounting: SMD Type of diode: Schottky switching Load current: 70mA Max. forward impulse current: 0.1A Max. off-state voltage: 70V Semiconductor structure: single diode |
на замовлення 5037 шт: термін постачання 21-30 дні (днів) |
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IPD90N06S407ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 63A Pulsed drain current: 360A Power dissipation: 79W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPB090N06N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 71W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IPD90N06S4L03ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 60V; 90A; 150W; DPAK,TO252; SMT Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 60V Drain current: 90A Power dissipation: 150W Case: DPAK; TO252 Gate-source voltage: 16V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 170nC Kind of channel: enhancement Electrical mounting: SMT Application: automotive industry |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IPD90N06S404ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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2EDN8524FXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8 Case: PG-DSO-8 Technology: EiceDRIVER™ Kind of package: reel; tape Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...20V Voltage class: 20V Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Mounting: SMD Protection: undervoltage UVP |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IR2118PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Mounting: THT Kind of package: tube Operating temperature: -40...125°C Output current: -420...200mA Turn-off time: 105ns Turn-on time: 125ns Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Case: DIP8 Voltage class: 600V Kind of integrated circuit: gate driver; high-side |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FP15R12W1T4 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Case: AG-EASY1B-1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 130W Technology: EasyPIM™ 1B Mechanical mounting: screw Application: Inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
CY8C5688AXI-LP099 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; 67MHz; Core: 32-bit Mounting: SMD Clock frequency: 67MHz Kind of core: 32-bit Type of integrated circuit: ARM microcontroller |
на замовлення 745 шт: термін постачання 21-30 дні (днів) |
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BCP55H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IPD75N04S406ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IRF7831TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
AIMZH120R030M1TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 49A; Idm: 176A; 163W Application: automotive industry Drain current: 49A Power dissipation: 163W Pulsed drain current: 176A Case: TO247-4 Drain-source voltage: 1.2kV Mounting: THT Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Gate-source voltage: -5...23V Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Technology: CoolSiC™; SiC On-state resistance: 60mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HL01GTFPBHB020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: HyperBus Operating frequency: 166MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HL01GTFPBHB030 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: HyperBus Operating frequency: 166MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HL01GTFPBHI030 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: HyperBus Operating frequency: 166MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HL02GTFGBHM040 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 2Gb FLASH Interface: HyperBus Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HL02GTFGBHM043 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 2Gb FLASH Interface: HyperBus Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Application: automotive Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HL512TFPBHI000 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 166MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HL512TFPBHI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 166MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HL512TFPBHM010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 166MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HL512TFPBHM013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 166MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Application: automotive Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HS512TGABHI000 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HS512TGABHI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S26HS512TGABHM010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S28HL01GTFPBHB030 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: octal Operating frequency: 166MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S28HL01GTFPBHV030 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: octal Operating frequency: 166MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S28HS02GTFPBHV050 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 2Gb FLASH Interface: octal Operating frequency: 166MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S28HS02GTFPBHV053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 2Gb FLASH Interface: octal Operating frequency: 166MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S28HS512TGABHB010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: octal Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S28HS512TGABHI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: octal Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S28HS512TGABHM010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: octal Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S28HS512TGABHM013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: octal Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Application: automotive Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSR92PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59 Technology: SIPMOS™ Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -250V Drain current: -110mA On-state resistance: 20Ω Power dissipation: 0.5W Gate-source voltage: ±20V Polarisation: unipolar Case: SC59 |
на замовлення 578 шт: термін постачання 21-30 дні (днів) |
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BSR802NL6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.5W; SC59 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 2346 шт: термін постачання 21-30 дні (днів) |
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BCR401U | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; current regulator,LED driver Kind of integrated circuit: current regulator; LED driver Case: SC74 Type of integrated circuit: driver Mounting: SMD Topology: single transistor Output current: 60mA Number of channels: 1 Operating voltage: 1.4...40V DC |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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XMC1100Q024F0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100 Case: PG-VQFN-24 Memory: 16kB SRAM; 64kB FLASH Kind of core: 32-bit Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO Kind of architecture: Cortex M0 Family: XMC1100 Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 4 Number of A/D channels: 8 Number of inputs/outputs: 22 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1100T038F0016ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM Case: PG-TSSOP-38 Memory: 16kB FLASH; 16kB SRAM Kind of core: 32-bit Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO Kind of architecture: Cortex M0 Family: XMC1100 Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 4 Number of A/D channels: 12 Number of inputs/outputs: 34 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1100T038F0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH Case: PG-TSSOP-38 Memory: 16kB SRAM; 32kB FLASH Kind of core: 32-bit Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO Kind of architecture: Cortex M0 Family: XMC1100 Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 4 Number of A/D channels: 12 Number of inputs/outputs: 34 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1100Q024F0016ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100 Case: PG-VQFN-24 Memory: 16kB FLASH; 16kB SRAM Kind of core: 32-bit Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO Kind of architecture: Cortex M0 Family: XMC1100 Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 4 Number of A/D channels: 8 Number of inputs/outputs: 22 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1301T016F0008ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1300 Case: PG-TSSOP-16 Memory: 8kB FLASH; 16kB SRAM Kind of core: 32-bit Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Kind of architecture: Cortex M0 Family: XMC1300 Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 8 Number of A/D channels: 6 Number of inputs/outputs: 14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1402Q048X0032AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,32kBFLASH; XMC1400 Case: PG-VQFN-48 Memory: 16kB SRAM; 32kB FLASH Kind of core: 32-bit Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Kind of architecture: Cortex M0 Family: XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 16 Number of A/D channels: 12 Number of inputs/outputs: 42 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1403Q048X0200AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH Case: PG-VQFN-48 Memory: 16kB SRAM; 200kB FLASH Kind of core: 32-bit Integrated circuit features: EEPROM emulation; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; USIC x4 Kind of architecture: Cortex M0 Family: XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 16 Number of A/D channels: 12 Number of inputs/outputs: 42 |
товару немає в наявності |
В кошику од. на суму грн. |
CY62177EV30LL-55BAXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
CY62177EV18LL-70BAXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
товару немає в наявності
В кошику
од. на суму грн.
CY62177EV30LL-55ZXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
BAW101E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Power dissipation: 0.35W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 1µs
Load current: 0.25A
Max. off-state voltage: 300V
Semiconductor structure: double independent
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Power dissipation: 0.35W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 1µs
Load current: 0.25A
Max. off-state voltage: 300V
Semiconductor structure: double independent
на замовлення 1620 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 11.43 грн |
50+ | 8.71 грн |
100+ | 7.68 грн |
135+ | 6.97 грн |
370+ | 6.57 грн |
BFR380L3E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
на замовлення 11862 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
84+ | 5.12 грн |
97+ | 4.12 грн |
101+ | 3.93 грн |
248+ | 3.76 грн |
500+ | 3.74 грн |
680+ | 3.55 грн |
2500+ | 3.42 грн |
BFR380FH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
на замовлення 5595 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 28.14 грн |
20+ | 20.11 грн |
100+ | 12.03 грн |
105+ | 8.95 грн |
287+ | 8.47 грн |
500+ | 8.39 грн |
1000+ | 8.15 грн |
BFR380L3E6327XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15000+ | 6.99 грн |
BTS3046SDLATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 46mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Output voltage: 60V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 46mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Output voltage: 60V
товару немає в наявності
В кошику
од. на суму грн.
BTS3046SDRATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; DPAK; 2÷10V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 46mΩ
Active logical level: low
Operating temperature: -40...150°C
Supply voltage: 2...10V
Integrated circuit features: thermal protection
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; DPAK; 2÷10V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 46mΩ
Active logical level: low
Operating temperature: -40...150°C
Supply voltage: 2...10V
Integrated circuit features: thermal protection
Application: automotive industry
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 95.49 грн |
BSP297H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 200V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT223
On-state resistance: 1.8Ω
Power dissipation: 1.8W
Drain current: 0.66A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 200V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT223
On-state resistance: 1.8Ω
Power dissipation: 1.8W
Drain current: 0.66A
Gate-source voltage: ±20V
на замовлення 643 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.24 грн |
10+ | 44.49 грн |
25+ | 39.35 грн |
38+ | 24.46 грн |
105+ | 23.12 грн |
500+ | 22.41 грн |
BSL316CH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Case: PG-TSOP-6
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.191/0.177Ω
Power dissipation: 0.5W
Drain current: 1.4/-1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Case: PG-TSOP-6
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.191/0.177Ω
Power dissipation: 0.5W
Drain current: 1.4/-1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of channel: enhancement
на замовлення 1532 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 32.40 грн |
21+ | 18.92 грн |
50+ | 13.54 грн |
60+ | 13.06 грн |
91+ | 10.21 грн |
250+ | 9.66 грн |
500+ | 9.58 грн |
1000+ | 9.34 грн |
BSP171PL6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SPD04P10PLGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -4.2A
On-state resistance: 0.85Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 38W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -4.2A
On-state resistance: 0.85Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 38W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
SPD04P10PGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -4A
On-state resistance: 1Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 38W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -4A
On-state resistance: 1Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 38W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
SPD15P10PGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
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TLE4251DATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: TLE4251DATMA1
Category: Integrated circuits - Unclassified
Description: TLE4251DATMA1
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 88.67 грн |
IPA70R600P7SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 700V; 8.5A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 700V
Drain current: 8.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: 16V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 10.5nC
Kind of channel: enhancement
Technology: MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 700V; 8.5A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 700V
Drain current: 8.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: 16V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 10.5nC
Kind of channel: enhancement
Technology: MOSFET
на замовлення 770 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 25.41 грн |
BAS170WE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOD323
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOD323
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: single diode
на замовлення 5037 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.87 грн |
29+ | 13.93 грн |
100+ | 8.52 грн |
209+ | 4.47 грн |
573+ | 4.22 грн |
IPD90N06S407ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPB090N06N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD90N06S4L03ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 79.29 грн |
IPD90N06S404ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 69.06 грн |
2EDN8524FXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Kind of package: reel; tape
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V
Voltage class: 20V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Kind of package: reel; tape
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V
Voltage class: 20V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Protection: undervoltage UVP
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.57 грн |
10+ | 45.68 грн |
27+ | 35.23 грн |
73+ | 33.33 грн |
2500+ | 32.06 грн |
IR2118PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 105ns
Turn-on time: 125ns
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Case: DIP8
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 105ns
Turn-on time: 125ns
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Case: DIP8
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
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FP15R12W1T4 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Application: Inverter
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Application: Inverter
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CY8C5688AXI-LP099 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; Core: 32-bit
Mounting: SMD
Clock frequency: 67MHz
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; Core: 32-bit
Mounting: SMD
Clock frequency: 67MHz
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
на замовлення 745 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
90+ | 910.59 грн |
BCP55H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
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IPD75N04S406ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 28.90 грн |
IRF7831TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AIMZH120R030M1TXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 49A; Idm: 176A; 163W
Application: automotive industry
Drain current: 49A
Power dissipation: 163W
Pulsed drain current: 176A
Case: TO247-4
Drain-source voltage: 1.2kV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate-source voltage: -5...23V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Technology: CoolSiC™; SiC
On-state resistance: 60mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 49A; Idm: 176A; 163W
Application: automotive industry
Drain current: 49A
Power dissipation: 163W
Pulsed drain current: 176A
Case: TO247-4
Drain-source voltage: 1.2kV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate-source voltage: -5...23V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Technology: CoolSiC™; SiC
On-state resistance: 60mΩ
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S26HL01GTFPBHB020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
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S26HL01GTFPBHB030 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
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S26HL01GTFPBHI030 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S26HL02GTFGBHM040 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Interface: HyperBus
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Interface: HyperBus
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
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S26HL02GTFGBHM043 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Interface: HyperBus
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Interface: HyperBus
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: reel; tape
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S26HL512TFPBHI000 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S26HL512TFPBHI010 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S26HL512TFPBHM010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
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S26HL512TFPBHM013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: reel; tape
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S26HS512TGABHI000 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S26HS512TGABHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S26HS512TGABHM010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
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S28HL01GTFPBHB030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: octal
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: octal
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
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S28HL01GTFPBHV030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: octal
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: octal
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S28HS02GTFPBHV050 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Interface: octal
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Interface: octal
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S28HS02GTFPBHV053 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Interface: octal
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Interface: octal
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S28HS512TGABHB010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
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S28HS512TGABHI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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од. на суму грн.
S28HS512TGABHM010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
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од. на суму грн.
S28HS512TGABHM013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: reel; tape
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BSR92PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Technology: SIPMOS™
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -250V
Drain current: -110mA
On-state resistance: 20Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: SC59
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Technology: SIPMOS™
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -250V
Drain current: -110mA
On-state resistance: 20Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: SC59
на замовлення 578 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.48 грн |
14+ | 29.77 грн |
50+ | 21.77 грн |
79+ | 11.80 грн |
218+ | 11.08 грн |
BSR802NL6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.5W; SC59
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.5W; SC59
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 2346 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.25 грн |
16+ | 25.02 грн |
18+ | 22.96 грн |
78+ | 11.95 грн |
214+ | 11.32 грн |
BCR401U |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Type of integrated circuit: driver
Mounting: SMD
Topology: single transistor
Output current: 60mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Type of integrated circuit: driver
Mounting: SMD
Topology: single transistor
Output current: 60mA
Number of channels: 1
Operating voltage: 1.4...40V DC
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.51 грн |
25+ | 18.84 грн |
XMC1100Q024F0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 8
Number of inputs/outputs: 22
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 8
Number of inputs/outputs: 22
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XMC1100T038F0016ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
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XMC1100T038F0032ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
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XMC1100Q024F0016ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 8
Number of inputs/outputs: 22
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 8
Number of inputs/outputs: 22
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XMC1301T016F0008ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1300
Case: PG-TSSOP-16
Memory: 8kB FLASH; 16kB SRAM
Kind of core: 32-bit
Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 6
Number of inputs/outputs: 14
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1300
Case: PG-TSSOP-16
Memory: 8kB FLASH; 16kB SRAM
Kind of core: 32-bit
Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 6
Number of inputs/outputs: 14
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XMC1402Q048X0032AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,32kBFLASH; XMC1400
Case: PG-VQFN-48
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 42
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,32kBFLASH; XMC1400
Case: PG-VQFN-48
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 42
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XMC1403Q048X0200AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Case: PG-VQFN-48
Memory: 16kB SRAM; 200kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 42
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Case: PG-VQFN-48
Memory: 16kB SRAM; 200kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 42
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од. на суму грн.