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IDDD12G65C6XTMA1 INFINEON TECHNOLOGIES IDDD12G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 12A
Technology: CoolSiC™ 5G; SiC
Power dissipation: 120W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 1.2µA
Semiconductor structure: single diode
Load current: 12A
Max. forward voltage: 1.25V
Max. forward impulse current: 51A
Type of diode: Schottky rectifying
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IDDD06G65C6XTMA1 INFINEON TECHNOLOGIES IDDD06G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 6A; 73W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 73W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 0.6µA
Semiconductor structure: single diode
Load current: 6A
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Type of diode: Schottky rectifying
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IDDD08G65C6XTMA1 INFINEON TECHNOLOGIES IDDD08G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 8A; 90W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 90W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 0.8µA
Semiconductor structure: single diode
Load current: 8A
Max. forward voltage: 1.25V
Max. forward impulse current: 37A
Type of diode: Schottky rectifying
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IDDD10G65C6XTMA1 INFINEON TECHNOLOGIES IDDD10G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 10A
Technology: CoolSiC™ 5G; SiC
Power dissipation: 105W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 1µA
Semiconductor structure: single diode
Load current: 10A
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Type of diode: Schottky rectifying
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IDDD16G65C6XTMA1 INFINEON TECHNOLOGIES IDDD16G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 16A
Technology: CoolSiC™ 5G; SiC
Power dissipation: 141W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 1.6µA
Semiconductor structure: single diode
Load current: 16A
Max. forward voltage: 1.25V
Max. forward impulse current: 65A
Type of diode: Schottky rectifying
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IDDD04G65C6XTMA1 INFINEON TECHNOLOGIES IDDD04G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 4A; 56W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 56W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 0.4µA
Semiconductor structure: single diode
Load current: 4A
Max. forward voltage: 1.25V
Max. forward impulse current: 23A
Type of diode: Schottky rectifying
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IDDD20G65C6XTMA1 INFINEON TECHNOLOGIES IDDD20G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 20A
Technology: CoolSiC™ 5G; SiC
Power dissipation: 169W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 2µA
Semiconductor structure: single diode
Load current: 20A
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Type of diode: Schottky rectifying
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IPDD60R050G7XTMA1 INFINEON TECHNOLOGIES IPDD60R050G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 135A
Power dissipation: 278W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPDD60R102G7XTMA1 INFINEON TECHNOLOGIES IPDD60R102G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 66A
Power dissipation: 139W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.102Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPDD60R150G7XTMA1 INFINEON TECHNOLOGIES IPDD60R150G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 16A; Idm: 45A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 95W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPDD60R080G7XTMA1 INFINEON TECHNOLOGIES IPDD60R080G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Pulsed drain current: 83A
Power dissipation: 174W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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IDM10G120C5XTMA1 IDM10G120C5XTMA1 INFINEON TECHNOLOGIES IDM10G120C5-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 10A; 223W
Type of diode: Schottky rectifying
Case: PG-TO252-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Leakage current: 4µA
Max. forward impulse current: 84A
Kind of package: reel; tape
Power dissipation: 223W
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IPD650P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+46.22 грн
Мінімальне замовлення: 2500
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CYBLE-212006-01 INFINEON TECHNOLOGIES Infineon-CYBLE-212006-01_CYBLE-202007-01_CYBLE-202013-11_EZ-BLE_Creator_XR_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee303b069f4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth
Type of communications module: Bluetooth
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
500+499.66 грн
Мінімальне замовлення: 500
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CYBLE-416045-02 INFINEON TECHNOLOGIES download Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy
Type of communications module: Bluetooth Low Energy
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
500+804.44 грн
Мінімальне замовлення: 500
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IRS2127STRPBF INFINEON TECHNOLOGIES irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+44.64 грн
Мінімальне замовлення: 2500
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CY15B108QN-40LPXI INFINEON TECHNOLOGIES CY15B108QN_CY15V108QN_RevB_5-25-22.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 8Mb FRAM
Interface: SPI
Memory organisation: 1024kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 40MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
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S70FS01GSAGBHI213 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S70FS01GSAGBHM210 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FS01GSAGMFI010 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; SOIC16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S70FS01GSDSBHI210 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S70FS01GSDSBHM210 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FS01GSDSBHV210 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S79FS01GSFABHB210 INFINEON TECHNOLOGIES Infineon-S79FS01GS_1_Gbit_1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7dd5970c3 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,QUAD SPI; 102MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; QUAD SPI
Operating frequency: 102MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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ICE3AR2280JZXKLA1 INFINEON TECHNOLOGIES Infineon-ICE3AR2280JZ-DS-v02_01-en.pdf?fileId=db3a3043284aacd801288a42141f2ad1 Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 550 шт:
термін постачання 21-30 дні (днів)
50+114.92 грн
Мінімальне замовлення: 50
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CY7C1381KV33-133AXIT INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1371KV33-133AXC INFINEON TECHNOLOGIES Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1373KV33-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1381KV33-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1383KV33-133AXCT INFINEON TECHNOLOGIES Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1383KV33-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1441KV33-133AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1441KV33-133AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1461KV33-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1461KV33_CY7C1463KV33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_with_NoBL_Architecture-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece7f0c490a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1471BV33-133AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1481BV33-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1481BV33_72_MBIT_(2M_X_36)_FLOW_THROUGH_SRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4634739d3 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY8C5888FNI-LP214T INFINEON TECHNOLOGIES Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9 Category: Unclassified
Description: CY8C5888FNI-LP214T
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
2000+2066.91 грн
Мінімальне замовлення: 2000
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CY96F623RBPMC1-GS-UJE2 INFINEON TECHNOLOGIES Infineon-CY96620_Series_F2MC-16FX_16_Bit_Microcontroller-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda18535bbb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
на замовлення 855 шт:
термін постачання 21-30 дні (днів)
160+1653.86 грн
Мінімальне замовлення: 160
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IPB100N06S205ATMA4 IPB100N06S205ATMA4 INFINEON TECHNOLOGIES IPB100N06S205.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 INFINEON TECHNOLOGIES IPB100N06S2L05.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
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IPD100N06S403ATMA2 INFINEON TECHNOLOGIES INFNS14378-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
2500+76.61 грн
Мінімальне замовлення: 2500
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IPD90N06S407ATMA2 INFINEON TECHNOLOGIES Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPB090N06N3GATMA1 IPB090N06N3GATMA1 INFINEON TECHNOLOGIES IPB090N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD90N06S404ATMA2 INFINEON TECHNOLOGIES INFNS13309-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 42500 шт:
термін постачання 21-30 дні (днів)
2500+74.12 грн
Мінімальне замовлення: 2500
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IRFR2905ZTRPBF IRFR2905ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4FF090C2C8DD820&compId=IRFx2905ZPBF.pdf?ci_sign=3b07f6054abebbd0a9725d152405263260ab9c43 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 42A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Gate charge: 44nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 240A
Mounting: SMD
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AUIRFR2905ZTRL INFINEON TECHNOLOGIES auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 60000 шт:
термін постачання 21-30 дні (днів)
3000+93.27 грн
Мінімальне замовлення: 3000
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IPD60R280P7ATMA1 IPD60R280P7ATMA1 INFINEON TECHNOLOGIES IPD60R280P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
на замовлення 2251 шт:
термін постачання 21-30 дні (днів)
4+121.58 грн
10+96.66 грн
12+78.10 грн
32+73.46 грн
50+71.91 грн
75+70.37 грн
Мінімальне замовлення: 4
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IPW60R280E6FKSA1 IPW60R280E6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952A490237D1BF&compId=IPW60R280E6-DTE.pdf?ci_sign=b6947e8bff4ec18032ca878fc86a7f543738e376 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPD60R280P7S IPD60R280P7S INFINEON TECHNOLOGIES IPD60R280P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
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IPB60R280P7ATMA1 IPB60R280P7ATMA1 INFINEON TECHNOLOGIES IPB60R280P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 18nC
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IPP60R280E6XKSA1 IPP60R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59465D6EA7BD1BF&compId=IPP60R280E6-DTE.pdf?ci_sign=4226e7b7164af0bd3fbeeb2a4824424fdb783737 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R280C6FKSA1 IPW60R280C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952581FF26B1BF&compId=IPW60R280C6-DTE.pdf?ci_sign=e60f596b485e85c4b8207311423c3bc90ab9094f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R280CFD7 IPP60R280CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7B62D76E074A&compId=IPP60R280CFD7.pdf?ci_sign=36d68e51f2886998836337e5223819a9871553bf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
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IPB60R280C6ATMA1 IPB60R280C6ATMA1 INFINEON TECHNOLOGIES IPB60R280C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
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IPD60R280CFD7 IPD60R280CFD7 INFINEON TECHNOLOGIES IPD60R280CFD7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
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IPD60R280PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 31A
Version: ESD
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IPI60R280C6XKSA1 IPI60R280C6XKSA1 INFINEON TECHNOLOGIES IPI60R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
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IPP60R280P7 IPP60R280P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2D56A4027A749&compId=IPP60R280P7.pdf?ci_sign=d3e6a2bf46f2739688b3d650a2c349effce4428a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IPW60R280P6FKSA1 IPW60R280P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954138267DF1BF&compId=IPW60R280P6-DTE.pdf?ci_sign=12445d377c5a1acad00e0c56c8efd6e1e601bd0f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPAN60R280PFD7SXKSA1 IPAN60R280PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IDDD12G65C6XTMA1 IDDD12G65C6.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 12A
Technology: CoolSiC™ 5G; SiC
Power dissipation: 120W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 1.2µA
Semiconductor structure: single diode
Load current: 12A
Max. forward voltage: 1.25V
Max. forward impulse current: 51A
Type of diode: Schottky rectifying
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IDDD06G65C6XTMA1 IDDD06G65C6.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 6A; 73W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 73W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 0.6µA
Semiconductor structure: single diode
Load current: 6A
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Type of diode: Schottky rectifying
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IDDD08G65C6XTMA1 IDDD08G65C6.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 8A; 90W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 90W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 0.8µA
Semiconductor structure: single diode
Load current: 8A
Max. forward voltage: 1.25V
Max. forward impulse current: 37A
Type of diode: Schottky rectifying
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IDDD10G65C6XTMA1 IDDD10G65C6.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 10A
Technology: CoolSiC™ 5G; SiC
Power dissipation: 105W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 1µA
Semiconductor structure: single diode
Load current: 10A
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Type of diode: Schottky rectifying
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IDDD16G65C6XTMA1 IDDD16G65C6.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 16A
Technology: CoolSiC™ 5G; SiC
Power dissipation: 141W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 1.6µA
Semiconductor structure: single diode
Load current: 16A
Max. forward voltage: 1.25V
Max. forward impulse current: 65A
Type of diode: Schottky rectifying
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IDDD04G65C6XTMA1 IDDD04G65C6.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 4A; 56W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 56W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 0.4µA
Semiconductor structure: single diode
Load current: 4A
Max. forward voltage: 1.25V
Max. forward impulse current: 23A
Type of diode: Schottky rectifying
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IDDD20G65C6XTMA1 IDDD20G65C6.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 20A
Technology: CoolSiC™ 5G; SiC
Power dissipation: 169W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Leakage current: 2µA
Semiconductor structure: single diode
Load current: 20A
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Type of diode: Schottky rectifying
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IPDD60R050G7XTMA1 IPDD60R050G7.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 135A
Power dissipation: 278W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPDD60R102G7XTMA1 IPDD60R102G7.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 66A
Power dissipation: 139W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.102Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPDD60R150G7XTMA1 IPDD60R150G7.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 16A; Idm: 45A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 95W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPDD60R080G7XTMA1 IPDD60R080G7.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Pulsed drain current: 83A
Power dissipation: 174W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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IDM10G120C5XTMA1 IDM10G120C5-DTE.pdf
IDM10G120C5XTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 10A; 223W
Type of diode: Schottky rectifying
Case: PG-TO252-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Leakage current: 4µA
Max. forward impulse current: 84A
Kind of package: reel; tape
Power dissipation: 223W
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IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+46.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CYBLE-212006-01 Infineon-CYBLE-212006-01_CYBLE-202007-01_CYBLE-202013-11_EZ-BLE_Creator_XR_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee303b069f4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Виробник: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth
Type of communications module: Bluetooth
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
500+499.66 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
CYBLE-416045-02 download
Виробник: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy
Type of communications module: Bluetooth Low Energy
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
500+804.44 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
IRS2127STRPBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+44.64 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CY15B108QN-40LPXI CY15B108QN_CY15V108QN_RevB_5-25-22.pdf
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 8Mb FRAM
Interface: SPI
Memory organisation: 1024kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 40MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
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S70FS01GSAGBHI213 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S70FS01GSAGBHM210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FS01GSAGMFI010 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; SOIC16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S70FS01GSDSBHI210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S70FS01GSDSBHM210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FS01GSDSBHV210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S79FS01GSFABHB210 Infineon-S79FS01GS_1_Gbit_1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7dd5970c3
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,QUAD SPI; 102MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; QUAD SPI
Operating frequency: 102MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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ICE3AR2280JZXKLA1 Infineon-ICE3AR2280JZ-DS-v02_01-en.pdf?fileId=db3a3043284aacd801288a42141f2ad1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 550 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+114.92 грн
Мінімальне замовлення: 50
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CY7C1381KV33-133AXIT
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1371KV33-133AXC Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1373KV33-133AXI Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1381KV33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1383KV33-133AXCT Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1383KV33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1441KV33-133AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1441KV33-133AXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1461KV33-133AXI Infineon-CY7C1461KV33_CY7C1463KV33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_with_NoBL_Architecture-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece7f0c490a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1471BV33-133AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1481BV33-133AXI Infineon-CY7C1481BV33_72_MBIT_(2M_X_36)_FLOW_THROUGH_SRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4634739d3
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY8C5888FNI-LP214T Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C5888FNI-LP214T
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+2066.91 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
CY96F623RBPMC1-GS-UJE2 Infineon-CY96620_Series_F2MC-16FX_16_Bit_Microcontroller-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda18535bbb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
на замовлення 855 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
160+1653.86 грн
Мінімальне замовлення: 160
В кошику  од. на суму  грн.
IPB100N06S205ATMA4 IPB100N06S205.pdf
IPB100N06S205ATMA4
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
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IPB100N06S2L05ATMA2 IPB100N06S2L05.pdf
IPB100N06S2L05ATMA2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
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IPD100N06S403ATMA2 INFNS14378-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+76.61 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90N06S407ATMA2 Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPB090N06N3GATMA1 IPB090N06N3G-DTE.pdf
IPB090N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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IPD90N06S404ATMA2 INFNS13309-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 42500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+74.12 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFR2905ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4FF090C2C8DD820&compId=IRFx2905ZPBF.pdf?ci_sign=3b07f6054abebbd0a9725d152405263260ab9c43
IRFR2905ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 42A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Gate charge: 44nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 240A
Mounting: SMD
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AUIRFR2905ZTRL auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 60000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+93.27 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPD60R280P7ATMA1 IPD60R280P7.pdf
IPD60R280P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
на замовлення 2251 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+121.58 грн
10+96.66 грн
12+78.10 грн
32+73.46 грн
50+71.91 грн
75+70.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPW60R280E6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952A490237D1BF&compId=IPW60R280E6-DTE.pdf?ci_sign=b6947e8bff4ec18032ca878fc86a7f543738e376
IPW60R280E6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPD60R280P7S IPD60R280P7S.pdf
IPD60R280P7S
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
товару немає в наявності
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IPB60R280P7ATMA1 IPB60R280P7.pdf
IPB60R280P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 18nC
товару немає в наявності
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IPP60R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59465D6EA7BD1BF&compId=IPP60R280E6-DTE.pdf?ci_sign=4226e7b7164af0bd3fbeeb2a4824424fdb783737
IPP60R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IPW60R280C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952581FF26B1BF&compId=IPW60R280C6-DTE.pdf?ci_sign=e60f596b485e85c4b8207311423c3bc90ab9094f
IPW60R280C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IPP60R280CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7B62D76E074A&compId=IPP60R280CFD7.pdf?ci_sign=36d68e51f2886998836337e5223819a9871553bf
IPP60R280CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
товару немає в наявності
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IPB60R280C6ATMA1 IPB60R280C6-DTE.pdf
IPB60R280C6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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IPD60R280CFD7 IPD60R280CFD7.pdf
IPD60R280CFD7
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
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IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 31A
Version: ESD
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IPI60R280C6XKSA1 IPI60R280C6-DTE.pdf
IPI60R280C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
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IPP60R280P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2D56A4027A749&compId=IPP60R280P7.pdf?ci_sign=d3e6a2bf46f2739688b3d650a2c349effce4428a
IPP60R280P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
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IPW60R280P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954138267DF1BF&compId=IPW60R280P6-DTE.pdf?ci_sign=12445d377c5a1acad00e0c56c8efd6e1e601bd0f
IPW60R280P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPAN60R280PFD7SXKSA1 Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926
IPAN60R280PFD7SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
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