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MCD312-14io1 MCD312-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDCA8EB05EA0C4&compId=MCD312-14io1.pdf?ci_sign=dedd65bbebe3c59db1f5b685833ef89066744455 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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MDD312-14N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8392079BA940C4&compId=MDD312-14N1.pdf?ci_sign=792bda4b8120bd8f2e2ccc7516966de107f48090 Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. forward impulse current: 10.8kA
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MDD312-20N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83AD4FE0FE20C4&compId=MDD312-20N1.pdf?ci_sign=3fd8972fcbd5dd17cb14f503e124146bb1d0a2e8 Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. forward impulse current: 10.8kA
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MCD312-12io1 MCD312-12io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDC6C3F32440C4&compId=MCD312-12io1.pdf?ci_sign=79086fa485071a4678fa5cfc24230c5f25f91f2a Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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CPC1976Y CPC1976Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958F47397AEAF8BF&compId=CPC1976.pdf?ci_sign=7dca44109e48c92fa27552e2a09f1c4b0605d5cc Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 2A
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 240V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
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CPC1393GR CPC1393GR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 675 шт:
термін постачання 21-30 дні (днів)
3+163.19 грн
8+121.39 грн
22+115.04 грн
200+111.07 грн
500+110.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1963G CPC1963G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81B80C7&compId=CPC1963.pdf?ci_sign=2da1d21c69f1322b9b80590b037dcf21bef53c98 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 364 шт:
термін постачання 21-30 дні (днів)
1+622.87 грн
3+329.25 грн
8+311.01 грн
250+304.66 грн
В кошику  од. на суму  грн.
MDO600-16N1 MDO600-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0B6A8D9091E28&compId=MDO600-16N1-DTE.pdf?ci_sign=85daf70db78e274567cdc548301bd5844612f039 Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Case: Y1-CU
Max. forward voltage: 1.01V
Load current: 560A
Max. forward impulse current: 12.8kA
Max. off-state voltage: 1.6kV
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IXFN180N25T IXFN180N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C6EEE88A158BF&compId=IXFN180N25T.pdf?ci_sign=93b68cf1b62ba6ba3001a31573d6dc6b40bde40e Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+1737.87 грн
2+1525.67 грн
10+1466.96 грн
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IXTP12N70X2 IXTP12N70X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
2+306.73 грн
3+256.26 грн
5+203.90 грн
13+192.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MCMA25P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
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MDMA425P1600PTSF IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9986F31ACAD840D5&compId=MDMA425P1600PTSF.pdf?ci_sign=256148c68a58f15821faeddf355176a8fe2207f6 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
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VUO52-16NO1 VUO52-16NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFC7C2484CF820&compId=VUO52-16NO1.pdf?ci_sign=cb3d514fb98f76504c6323abae3ecd47f2564f93 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+2199.26 грн
2+1931.09 грн
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IXDN604PI IXDN604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC684A2EAF820&compId=IXD_604.pdf?ci_sign=5212fc240f089b60cb86612e9306367e8987585c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
4+130.72 грн
10+88.86 грн
12+82.51 грн
32+78.54 грн
100+75.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN604SIA IXDN604SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
4+117.91 грн
10+80.13 грн
25+78.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN604SI IXDN604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 879 шт:
термін постачання 21-30 дні (днів)
3+190.53 грн
7+140.43 грн
19+132.49 грн
200+130.11 грн
300+127.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN604SIATR IXDN604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDN602D2TR IXDN602D2TR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 93ns
Turn-off time: 93ns
Kind of package: reel; tape
Case: DFN8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
3+150.38 грн
10+90.45 грн
17+57.92 грн
45+54.74 грн
250+53.16 грн
500+52.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCMA120UJ1800ED MCMA120UJ1800ED IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F396F01FCBC0C4&compId=MCMA120UJ1800ED.pdf?ci_sign=ed29dbc111df95f6c7ded27cde6830766c074f30 Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Version: module
Gate current: 70/150mA
Max. forward voltage: 1.36V
Load current: 120A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.8kV
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+5442.60 грн
В кошику  од. на суму  грн.
IXTN110N20L2 IXTN110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8D4C2C0D3B820&compId=IXTN110N20L2.pdf?ci_sign=22d1ef7a7256a11bcc8df888639ad4005a52d7b3 Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
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IXTK110N20L2 IXTK110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
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OMA160 OMA160 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Switched voltage: max. 250V AC; max. 250V DC
On-state resistance: 100Ω
Relay variant: 1-phase; current source
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
2+310.15 грн
6+172.96 грн
15+163.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1010N CPC1010N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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CPC1010NTR CPC1010NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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CPC1020NTR CPC1020NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75960C7&compId=CPC1020N.pdf?ci_sign=96f62284072c1fad21550f35e7a4e26a55ed445d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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CPC1019NTR CPC1019NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3 Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Contacts configuration: SPST-NO
On-state resistance: 0.6Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
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CPC1004NTR CPC1004NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42900C7&compId=CPC1004N.pdf?ci_sign=c2ff74f63a010424db623c4e5b6a3f4c09119d56 Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Type of relay: solid state
Max. operating current: 300mA
Switched voltage: max. 100V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Turn-on time: 3ms
Turn-off time: 1ms
Contacts configuration: SPST-NO
On-state resistance: 4Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
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CPC1030NTR CPC1030NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1006NTR CPC1006NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
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DSEP60-12A DSEP60-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEED68314162143&compId=DSEP60-12A.pdf?ci_sign=4a7fc7a2560391c6c87bbd840d34293d102b5d7c Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 241 шт:
термін постачання 21-30 дні (днів)
1+686.09 грн
2+495.86 грн
6+468.89 грн
30+453.02 грн
В кошику  од. на суму  грн.
DSEP60-12AR DSEP60-12AR IXYS Littelfuse-Power-Semiconductors-DSEP60-12AR-Datasheet?assetguid=10cd7d84-2ee7-4c08-a9c7-b27e7f1dde17 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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CPC1706Y CPC1706Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4927C8677A0C7&compId=CPC1706.pdf?ci_sign=9ed605bb3e0989318f6e250694ab09cd9e3ff237 Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: SOP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 90mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
2+302.46 грн
6+176.13 грн
15+166.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP12N50P IXFP12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
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MIXG330PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
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CPC5602CTR CPC5602CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6668BB1AE38BF&compId=CPC5602.pdf?ci_sign=1ab99acd3aab3a1662bfc24a628f4deff77adc0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 586 шт:
термін постачання 21-30 дні (днів)
6+76.04 грн
10+48.48 грн
33+28.72 грн
90+27.13 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
VHFD37-16IO1 VHFD37-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Version: module
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Gate current: 50/80mA
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+2571.78 грн
2+2257.97 грн
10+2165.93 грн
В кошику  од. на суму  грн.
PLA191S PLA191S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 199 шт:
термін постачання 21-30 дні (днів)
2+342.62 грн
4+253.88 грн
11+239.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MDMA660U1600PTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1FD092D100ED5523E0E1&compId=MDMA660U1600PTEH.pdf?ci_sign=e72c61a2f37282fa00f16d3953aceaa71a0e1234 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Mechanical mounting: screw
Electrical mounting: Press-Fit
Version: module
Load current: 660A
Max. forward impulse current: 5kA
Max. off-state voltage: 1.6kV
Type of bridge rectifier: three-phase
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+11662.72 грн
В кошику  од. на суму  грн.
DSEI30-10A DSEI30-10A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD568A65B4938BF&compId=DSEI30-10A.pdf?ci_sign=852498fdf79c980b238d3a278082ea33068754bc description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 212 шт:
термін постачання 21-30 дні (днів)
2+287.08 грн
4+234.05 грн
10+212.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH120N20P IXFH120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 100ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Kind of package: tube
на замовлення 65 шт:
термін постачання 21-30 дні (днів)
1+915.08 грн
2+637.88 грн
5+602.97 грн
30+579.96 грн
В кошику  од. на суму  грн.
CPC3701CTR CPC3701CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FFA760F104746&compId=CPC3701.pdf?ci_sign=3b686c50781704a72018b86754c7a8d41bba5ce4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.6A
On-state resistance: 1Ω
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 60V
на замовлення 330 шт:
термін постачання 21-30 дні (днів)
7+70.92 грн
10+44.59 грн
33+28.40 грн
91+26.82 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IXXH100N60B3 IXXH100N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4A5F5037D820&compId=IXXH100N60B3.pdf?ci_sign=0b1678af7c3157780613381fd45916184563f06e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
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IXDN609SI IXDN609SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1580 шт:
термін постачання 21-30 дні (днів)
3+200.79 грн
8+124.56 грн
21+118.21 грн
100+117.42 грн
200+113.45 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN609SIA IXDN609SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 427 шт:
термін постачання 21-30 дні (днів)
4+126.45 грн
10+85.69 грн
12+80.13 грн
25+79.34 грн
32+76.16 грн
50+75.37 грн
100+72.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LF2136BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27090BC18C0CE&compId=LF2136BTR.pdf?ci_sign=7d4488ec65212ff10c76d0a7eb8b2083d5f4913f Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
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PBA150S PBA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
On-state resistance: 7Ω
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-off time: 2.5ms
Turn-on time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
1+521.19 грн
3+391.93 грн
7+370.51 грн
В кошику  од. на суму  грн.
IXGH10N170A IXGH10N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A98EA1E25B38BF&compId=IXG_10N170A.pdf?ci_sign=43009bf67308e8af9bb85474249e61e9278ec252 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Technology: NPT
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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IXTA50N20P IXTA50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA50N25T IXTA50N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH24N65X2 IXTH24N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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IXFA34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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IXFH34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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DSSS35-008AR DSSS35-008AR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CC1AE5618238BF&compId=DSSS35-008AR.pdf?ci_sign=7ea710e63520a5c453cdbdb74d880f191ed6aa31 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Load current: 35A x2
Power dissipation: 190W
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Semiconductor structure: double series
Case: ISOPLUS247™
Max. off-state voltage: 80V
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LOC110S LOC110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
на замовлення 478 шт:
термін постачання 21-30 дні (днів)
2+254.61 грн
9+114.25 грн
23+107.90 грн
100+107.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC2907B CPC2907B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891C20C7&compId=CPC2907B.pdf?ci_sign=a420b940460f63d53df36ffc1c7c33e2994b12e8 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+685.24 грн
2+549.81 грн
5+519.67 грн
В кошику  од. на суму  грн.
IXFR44N80P IXFR44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC577820&compId=IXFR44N80P.pdf?ci_sign=51db11391181a2835bbd75c1ae0c474b83eb49a1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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DSEI8-06AS-TUB DSEI8-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4DA1E4FAF60C4&compId=DSEI8-06A_DSEI8-06AS.pdf?ci_sign=bfe55369decdc2777973e475f80101adee4fb738 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: fast switching
Technology: FRED
Reverse recovery time: 35ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
3+174.30 грн
10+100.76 грн
26+95.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN614PI IXDN614PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Operating temperature: -40...125°C
Output current: -14...14A
Turn-off time: 130ns
Turn-on time: 140ns
Number of channels: 1
Supply voltage: 4.5...35V
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
2+243.51 грн
9+111.07 грн
24+104.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1966YX6 CPC1966YX6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82200C7&compId=CPC1966YX6.pdf?ci_sign=3627c14bdb96a92aa76e317f8bb40155f042cd56 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 500µs
Max. operating current: 3A
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: instantaneous switching
Mounting: THT
Type of relay: solid state
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
1+455.40 грн
3+369.72 грн
7+349.88 грн
25+348.29 грн
В кошику  од. на суму  грн.
CPC1981Y CPC1981Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B4C0C7&compId=CPC1981.pdf?ci_sign=49fda13fe6a6bae85cf657bec9b4905da8f5b07d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 180mA
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 18Ω
Switched voltage: max. 1kV AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
2+355.44 грн
5+208.66 грн
13+196.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MCD312-14io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDCA8EB05EA0C4&compId=MCD312-14io1.pdf?ci_sign=dedd65bbebe3c59db1f5b685833ef89066744455
MCD312-14io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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MDD312-14N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8392079BA940C4&compId=MDD312-14N1.pdf?ci_sign=792bda4b8120bd8f2e2ccc7516966de107f48090
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. forward impulse current: 10.8kA
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MDD312-20N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83AD4FE0FE20C4&compId=MDD312-20N1.pdf?ci_sign=3fd8972fcbd5dd17cb14f503e124146bb1d0a2e8
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. forward impulse current: 10.8kA
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MCD312-12io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDC6C3F32440C4&compId=MCD312-12io1.pdf?ci_sign=79086fa485071a4678fa5cfc24230c5f25f91f2a
MCD312-12io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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CPC1976Y pVersion=0046&contRep=ZT&docId=005056AB82531EE9958F47397AEAF8BF&compId=CPC1976.pdf?ci_sign=7dca44109e48c92fa27552e2a09f1c4b0605d5cc
CPC1976Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 2A
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 240V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
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CPC1393GR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393GR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 675 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+163.19 грн
8+121.39 грн
22+115.04 грн
200+111.07 грн
500+110.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1963G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81B80C7&compId=CPC1963.pdf?ci_sign=2da1d21c69f1322b9b80590b037dcf21bef53c98
CPC1963G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 364 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+622.87 грн
3+329.25 грн
8+311.01 грн
250+304.66 грн
В кошику  од. на суму  грн.
MDO600-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0B6A8D9091E28&compId=MDO600-16N1-DTE.pdf?ci_sign=85daf70db78e274567cdc548301bd5844612f039
MDO600-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Case: Y1-CU
Max. forward voltage: 1.01V
Load current: 560A
Max. forward impulse current: 12.8kA
Max. off-state voltage: 1.6kV
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IXFN180N25T pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C6EEE88A158BF&compId=IXFN180N25T.pdf?ci_sign=93b68cf1b62ba6ba3001a31573d6dc6b40bde40e
IXFN180N25T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1737.87 грн
2+1525.67 грн
10+1466.96 грн
В кошику  од. на суму  грн.
IXTP12N70X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP12N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+306.73 грн
3+256.26 грн
5+203.90 грн
13+192.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MCMA25P1600TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
товару немає в наявності
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MDMA425P1600PTSF pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9986F31ACAD840D5&compId=MDMA425P1600PTSF.pdf?ci_sign=256148c68a58f15821faeddf355176a8fe2207f6
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
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VUO52-16NO1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFC7C2484CF820&compId=VUO52-16NO1.pdf?ci_sign=cb3d514fb98f76504c6323abae3ecd47f2564f93
VUO52-16NO1
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2199.26 грн
2+1931.09 грн
В кошику  од. на суму  грн.
IXDN604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC684A2EAF820&compId=IXD_604.pdf?ci_sign=5212fc240f089b60cb86612e9306367e8987585c
IXDN604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+130.72 грн
10+88.86 грн
12+82.51 грн
32+78.54 грн
100+75.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN604SIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDN604SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+117.91 грн
10+80.13 грн
25+78.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDN604SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 879 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+190.53 грн
7+140.43 грн
19+132.49 грн
200+130.11 грн
300+127.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDN604SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDN602D2TR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602D2TR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 93ns
Turn-off time: 93ns
Kind of package: reel; tape
Case: DFN8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+150.38 грн
10+90.45 грн
17+57.92 грн
45+54.74 грн
250+53.16 грн
500+52.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCMA120UJ1800ED pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F396F01FCBC0C4&compId=MCMA120UJ1800ED.pdf?ci_sign=ed29dbc111df95f6c7ded27cde6830766c074f30
MCMA120UJ1800ED
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Version: module
Gate current: 70/150mA
Max. forward voltage: 1.36V
Load current: 120A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.8kV
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5442.60 грн
В кошику  од. на суму  грн.
IXTN110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8D4C2C0D3B820&compId=IXTN110N20L2.pdf?ci_sign=22d1ef7a7256a11bcc8df888639ad4005a52d7b3
IXTN110N20L2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
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IXTK110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b
IXTK110N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
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OMA160 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b
OMA160
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Switched voltage: max. 250V AC; max. 250V DC
On-state resistance: 100Ω
Relay variant: 1-phase; current source
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+310.15 грн
6+172.96 грн
15+163.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1010N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4
CPC1010N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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CPC1010NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4
CPC1010NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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CPC1020NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75960C7&compId=CPC1020N.pdf?ci_sign=96f62284072c1fad21550f35e7a4e26a55ed445d
CPC1020NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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CPC1019NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3
CPC1019NTR
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Contacts configuration: SPST-NO
On-state resistance: 0.6Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
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CPC1004NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42900C7&compId=CPC1004N.pdf?ci_sign=c2ff74f63a010424db623c4e5b6a3f4c09119d56
CPC1004NTR
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Type of relay: solid state
Max. operating current: 300mA
Switched voltage: max. 100V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Turn-on time: 3ms
Turn-off time: 1ms
Contacts configuration: SPST-NO
On-state resistance: 4Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
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CPC1030NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d
CPC1030NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1006NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419
CPC1006NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
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DSEP60-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEED68314162143&compId=DSEP60-12A.pdf?ci_sign=4a7fc7a2560391c6c87bbd840d34293d102b5d7c
DSEP60-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 241 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+686.09 грн
2+495.86 грн
6+468.89 грн
30+453.02 грн
В кошику  од. на суму  грн.
DSEP60-12AR description Littelfuse-Power-Semiconductors-DSEP60-12AR-Datasheet?assetguid=10cd7d84-2ee7-4c08-a9c7-b27e7f1dde17
DSEP60-12AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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CPC1706Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4927C8677A0C7&compId=CPC1706.pdf?ci_sign=9ed605bb3e0989318f6e250694ab09cd9e3ff237
CPC1706Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: SOP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 90mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+302.46 грн
6+176.13 грн
15+166.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP12N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3
IXFP12N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
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MIXG330PF1200PTSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
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CPC5602CTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6668BB1AE38BF&compId=CPC5602.pdf?ci_sign=1ab99acd3aab3a1662bfc24a628f4deff77adc0a
CPC5602CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 586 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.04 грн
10+48.48 грн
33+28.72 грн
90+27.13 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
VHFD37-16IO1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19
VHFD37-16IO1
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Version: module
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Gate current: 50/80mA
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2571.78 грн
2+2257.97 грн
10+2165.93 грн
В кошику  од. на суму  грн.
PLA191S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
PLA191S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 199 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+342.62 грн
4+253.88 грн
11+239.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MDMA660U1600PTEH pVersion=0046&contRep=ZT&docId=005056AB281E1FD092D100ED5523E0E1&compId=MDMA660U1600PTEH.pdf?ci_sign=e72c61a2f37282fa00f16d3953aceaa71a0e1234
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Case: E3-Pack
Mechanical mounting: screw
Electrical mounting: Press-Fit
Version: module
Load current: 660A
Max. forward impulse current: 5kA
Max. off-state voltage: 1.6kV
Type of bridge rectifier: three-phase
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+11662.72 грн
В кошику  од. на суму  грн.
DSEI30-10A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD568A65B4938BF&compId=DSEI30-10A.pdf?ci_sign=852498fdf79c980b238d3a278082ea33068754bc
DSEI30-10A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 212 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+287.08 грн
4+234.05 грн
10+212.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH120N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee
IXFH120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 100ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Kind of package: tube
на замовлення 65 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+915.08 грн
2+637.88 грн
5+602.97 грн
30+579.96 грн
В кошику  од. на суму  грн.
CPC3701CTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FFA760F104746&compId=CPC3701.pdf?ci_sign=3b686c50781704a72018b86754c7a8d41bba5ce4
CPC3701CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.6A
On-state resistance: 1Ω
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 60V
на замовлення 330 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.92 грн
10+44.59 грн
33+28.40 грн
91+26.82 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IXXH100N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4A5F5037D820&compId=IXXH100N60B3.pdf?ci_sign=0b1678af7c3157780613381fd45916184563f06e
IXXH100N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
товару немає в наявності
В кошику  од. на суму  грн.
IXDN609SI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1580 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+200.79 грн
8+124.56 грн
21+118.21 грн
100+117.42 грн
200+113.45 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN609SIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 427 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+126.45 грн
10+85.69 грн
12+80.13 грн
25+79.34 грн
32+76.16 грн
50+75.37 грн
100+72.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LF2136BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27090BC18C0CE&compId=LF2136BTR.pdf?ci_sign=7d4488ec65212ff10c76d0a7eb8b2083d5f4913f
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
товару немає в наявності
В кошику  од. на суму  грн.
PBA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e
PBA150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
On-state resistance: 7Ω
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-off time: 2.5ms
Turn-on time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+521.19 грн
3+391.93 грн
7+370.51 грн
В кошику  од. на суму  грн.
IXGH10N170A pVersion=0046&contRep=ZT&docId=005056AB82531EE995A98EA1E25B38BF&compId=IXG_10N170A.pdf?ci_sign=43009bf67308e8af9bb85474249e61e9278ec252
IXGH10N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Technology: NPT
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
товару немає в наявності
В кошику  од. на суму  грн.
IXTA50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTA50N20P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA50N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4E4FF92DFD820&compId=IXTA(H%2CP%2CQ)50N25T.pdf?ci_sign=7e809dd509feff8e274b784c3f608f03c09bb7c0
IXTA50N25T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTH24N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744
IXTH24N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXFA34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXFH34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
товару немає в наявності
В кошику  од. на суму  грн.
DSSS35-008AR pVersion=0046&contRep=ZT&docId=005056AB82531EE991CC1AE5618238BF&compId=DSSS35-008AR.pdf?ci_sign=7ea710e63520a5c453cdbdb74d880f191ed6aa31
DSSS35-008AR
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Load current: 35A x2
Power dissipation: 190W
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Semiconductor structure: double series
Case: ISOPLUS247™
Max. off-state voltage: 80V
товару немає в наявності
В кошику  од. на суму  грн.
LOC110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110S
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
на замовлення 478 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+254.61 грн
9+114.25 грн
23+107.90 грн
100+107.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC2907B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891C20C7&compId=CPC2907B.pdf?ci_sign=a420b940460f63d53df36ffc1c7c33e2994b12e8
CPC2907B
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+685.24 грн
2+549.81 грн
5+519.67 грн
В кошику  од. на суму  грн.
IXFR44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC577820&compId=IXFR44N80P.pdf?ci_sign=51db11391181a2835bbd75c1ae0c474b83eb49a1
IXFR44N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
DSEI8-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4DA1E4FAF60C4&compId=DSEI8-06A_DSEI8-06AS.pdf?ci_sign=bfe55369decdc2777973e475f80101adee4fb738
DSEI8-06AS-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: fast switching
Technology: FRED
Reverse recovery time: 35ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+174.30 грн
10+100.76 грн
26+95.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN614PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Operating temperature: -40...125°C
Output current: -14...14A
Turn-off time: 130ns
Turn-on time: 140ns
Number of channels: 1
Supply voltage: 4.5...35V
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+243.51 грн
9+111.07 грн
24+104.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1966YX6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82200C7&compId=CPC1966YX6.pdf?ci_sign=3627c14bdb96a92aa76e317f8bb40155f042cd56
CPC1966YX6
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 500µs
Max. operating current: 3A
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: instantaneous switching
Mounting: THT
Type of relay: solid state
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+455.40 грн
3+369.72 грн
7+349.88 грн
25+348.29 грн
В кошику  од. на суму  грн.
CPC1981Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B4C0C7&compId=CPC1981.pdf?ci_sign=49fda13fe6a6bae85cf657bec9b4905da8f5b07d
CPC1981Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 180mA
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 18Ω
Switched voltage: max. 1kV AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+355.44 грн
5+208.66 грн
13+196.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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