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MDD312-14N1 IXYS MDD312-14N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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MDD312-20N1 IXYS MDD312-20N1.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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MCD312-12io1 MCD312-12io1 IXYS MCD312-12io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
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CPC1983YE CPC1983YE IXYS CPC1983YE.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Operating temperature: -40...85°C
On-state resistance: 6Ω
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Case: SIP4
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+407.33 грн
4+260.88 грн
10+246.68 грн
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CPC1976Y CPC1976Y IXYS CPC1976.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 240V AC
Control current max.: 50mA
Mounting: THT
Case: SIP4
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
2+295.44 грн
5+180.90 грн
14+170.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1393GR CPC1393GR IXYS CPC1393.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
3+144.90 грн
9+108.39 грн
23+102.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1963G CPC1963G IXYS CPC1963.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: THT
Case: DIP6
на замовлення 401 шт:
термін постачання 21-30 дні (днів)
1+696.32 грн
3+309.46 грн
8+293.02 грн
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IXFA80N25X3 IXFA80N25X3 IXYS IXFA80N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO263
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Features of semiconductor devices: ultra junction x-class
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
1+550.62 грн
3+411.12 грн
6+388.70 грн
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IXFA12N50P IXFA12N50P IXYS IXF_12N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
2+263.24 грн
3+219.76 грн
5+174.92 грн
14+165.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MDO600-16N1 MDO600-16N1 IXYS MDO600-16N1-DTE.pdf Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.01V
Load current: 560A
Semiconductor structure: single diode
Max. forward impulse current: 12.8kA
Electrical mounting: screw
Type of module: diode
Case: Y1-CU
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IXGA30N120B3 IXGA30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
на замовлення 331 шт:
термін постачання 21-30 дні (днів)
1+747.04 грн
2+497.09 грн
5+470.18 грн
В кошику  од. на суму  грн.
IXGP30N120B3 IXGP30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+764.75 грн
3+338.62 грн
8+319.93 грн
В кошику  од. на суму  грн.
IXGH30N120B3D1 IXGH30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
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IXGT30N120B3D1 IXGT30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
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IXYH30N120C3 IXYH30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Turn-on time: 71ns
Turn-off time: 296ns
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IXFB30N120P IXFB30N120P IXYS IXFB30N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±30V
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IXFN30N120P IXFN30N120P IXYS IXFN30N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
On-state resistance: 0.35Ω
Gate charge: 310nC
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±40V
Semiconductor structure: single transistor
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS IXGH30N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 115A
Turn-on time: 60ns
Turn-off time: 415ns
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IXYH30N120C3D1 IXYH30N120C3D1 IXYS IXYH30N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Turn-on time: 71ns
Turn-off time: 296ns
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IXYP30N120C3 IXYP30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 500W
Case: TO220-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Turn-on time: 71ns
Turn-off time: 296ns
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IXA33IF1200HB IXA33IF1200HB IXYS IXA33IF1200HB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
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LCA125 LCA125 IXYS LCA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Control current max.: 50mA
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
2+267.26 грн
6+168.19 грн
15+158.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA125S LCA125S IXYS LCA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Control current max.: 50mA
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
2+379.16 грн
6+168.94 грн
15+159.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA120S LCA120S IXYS LCA120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
3+196.42 грн
6+146.51 грн
17+138.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCA125LS LCA125LS IXYS LCA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Control current max.: 50mA
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
2+386.40 грн
6+171.92 грн
14+162.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN180N25T IXFN180N25T IXYS IXFN180N25T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
1+1850.70 грн
2+1625.06 грн
В кошику  од. на суму  грн.
IXTP12N70X2 IXTP12N70X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Power dissipation: 180W
Gate charge: 19nC
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
2+289.00 грн
3+241.44 грн
5+192.11 грн
13+181.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP12N70X2M IXTP12N70X2M IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Power dissipation: 40W
Gate charge: 19nC
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IXFH52N50P2 IXFH52N50P2 IXYS IXFH(T)52N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
1+833.18 грн
2+553.15 грн
3+552.40 грн
5+522.50 грн
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IXFT52N50P2 IXFT52N50P2 IXYS IXFH(T)52N50P2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO268
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
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IXBOD1-36R IXBOD1-36R IXYS IXBOD1_v2.pdf Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Mounting: THT
Case: BOD
Kind of package: bulk
Max. load current: 0.7A
Breakover voltage: 3.6kV
Type of thyristor: BOD x4
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+6546.26 грн
20+5979.25 грн
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IXFH40N50Q IXFH40N50Q IXYS IXFH40N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1077.90 грн
3+946.34 грн
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IXTH40N50L2 IXTH40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ40N50L2 IXTQ40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT40N50L2 IXTT40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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MCMA25P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.52V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
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MDMA425P1600PTSF IXYS MDMA425P1600PTSF.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Case: SimBus F
Max. off-state voltage: 1.6kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
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IXFQ94N30P3 IXFQ94N30P3 IXYS IXFH(Q,T)94N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO3P
Mounting: THT
Kind of package: tube
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 102nC
Kind of channel: enhancement
Case: TO3P
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+744.62 грн
2+586.79 грн
5+554.64 грн
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IXFH94N30P3 IXFH94N30P3 IXYS IXFH(Q,T)94N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+825.93 грн
2+621.17 грн
4+587.54 грн
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IXTX4N300P3HV IXYS IXTX4N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 139nC
Technology: Polar3™
Kind of channel: enhancement
Case: TO247PLUS-HV
Reverse recovery time: 420ns
Drain-source voltage: 3kV
Drain current: 4A
Type of transistor: N-MOSFET
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IXTH04N300P3HV IXTH04N300P3HV IXYS IXTH04N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Mounting: THT
Kind of package: tube
Power dissipation: 104W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 13nC
Kind of channel: enhancement
Case: TO247HV
Reverse recovery time: 1.1µs
Drain-source voltage: 3kV
Drain current: 0.4A
On-state resistance: 190Ω
Type of transistor: N-MOSFET
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IXFH94N30T IXFH94N30T IXYS IXFH(T)94N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO247-3; 155ns
Mounting: THT
Kind of package: tube
Power dissipation: 890W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.19µC
Kind of channel: enhancement
Case: TO247-3
Reverse recovery time: 155ns
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
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IXFT94N30T IXFT94N30T IXYS IXFH(T)94N30T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns
Mounting: SMD
Kind of package: tube
Power dissipation: 890W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.19µC
Kind of channel: enhancement
Case: TO268
Reverse recovery time: 155ns
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
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IXFT94N30P3 IXFT94N30P3 IXYS IXFH(Q,T)94N30P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
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DSS2X121-0045B DSS2X121-0045B IXYS DSS2x121-0045B.pdf description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
1+2053.56 грн
2+1802.97 грн
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LF21904NTR LF21904NTR IXYS LF21904NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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LF2190NTR LF2190NTR IXYS LF2190NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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IXFR90N30 IXFR90N30 IXYS IXFR90N30.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 75A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
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DSI45-16AR DSI45-16AR IXYS DSI45-16AR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 45A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 410A
Case: ISOPLUS247™
Max. forward voltage: 1.23V
Power dissipation: 165W
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
1+481.39 грн
3+320.68 грн
8+303.48 грн
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MCD310-16io1 MCD310-16io1 IXYS MCC310-16IO1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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XS170STR IXYS XS170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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LBA716STR IXYS LBA716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.4Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
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PLA170STR IXYS PLA170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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LAA108STR IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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PM1205STR IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
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LCB110STR IXYS LCB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LCB716STR IXYS LCB716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LCB717STR IXYS LCB717.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
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LCB710STR IXYS LCB710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LBA110STR IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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MDD312-14N1 MDD312-14N1.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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MDD312-20N1 MDD312-20N1.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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MCD312-12io1 MCD312-12io1.pdf
MCD312-12io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
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CPC1983YE CPC1983YE.pdf
CPC1983YE
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Operating temperature: -40...85°C
On-state resistance: 6Ω
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Case: SIP4
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+407.33 грн
4+260.88 грн
10+246.68 грн
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CPC1976Y CPC1976.pdf
CPC1976Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 240V AC
Control current max.: 50mA
Mounting: THT
Case: SIP4
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+295.44 грн
5+180.90 грн
14+170.43 грн
Мінімальне замовлення: 2
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CPC1393GR CPC1393.pdf
CPC1393GR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+144.90 грн
9+108.39 грн
23+102.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1963G CPC1963.pdf
CPC1963G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: THT
Case: DIP6
на замовлення 401 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+696.32 грн
3+309.46 грн
8+293.02 грн
В кошику  од. на суму  грн.
IXFA80N25X3 IXFA80N25X3.pdf
IXFA80N25X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO263
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Features of semiconductor devices: ultra junction x-class
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+550.62 грн
3+411.12 грн
6+388.70 грн
В кошику  од. на суму  грн.
IXFA12N50P IXF_12N50P.pdf
IXFA12N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+263.24 грн
3+219.76 грн
5+174.92 грн
14+165.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MDO600-16N1 MDO600-16N1-DTE.pdf
MDO600-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.01V
Load current: 560A
Semiconductor structure: single diode
Max. forward impulse current: 12.8kA
Electrical mounting: screw
Type of module: diode
Case: Y1-CU
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IXGA30N120B3 IXGA(H,P)30N120B3.pdf
IXGA30N120B3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
на замовлення 331 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+747.04 грн
2+497.09 грн
5+470.18 грн
В кошику  од. на суму  грн.
IXGP30N120B3 IXGA(H,P)30N120B3.pdf
IXGP30N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+764.75 грн
3+338.62 грн
8+319.93 грн
В кошику  од. на суму  грн.
IXGH30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGH30N120B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
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IXGT30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGT30N120B3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Turn-on time: 56ns
Turn-off time: 471ns
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IXYH30N120C3 IXY_30N120C3.pdf
IXYH30N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Turn-on time: 71ns
Turn-off time: 296ns
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IXFB30N120P IXFB30N120P.pdf
IXFB30N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±30V
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IXFN30N120P IXFN30N120P.pdf
IXFN30N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
On-state resistance: 0.35Ω
Gate charge: 310nC
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±40V
Semiconductor structure: single transistor
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IXGH30N120C3H1 IXGH30N120C3H1.pdf
IXGH30N120C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 115A
Turn-on time: 60ns
Turn-off time: 415ns
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IXYH30N120C3D1 IXYH30N120C3D1.pdf
IXYH30N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Turn-on time: 71ns
Turn-off time: 296ns
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IXYP30N120C3 IXY_30N120C3.pdf
IXYP30N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 500W
Case: TO220-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Turn-on time: 71ns
Turn-off time: 296ns
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IXA33IF1200HB IXA33IF1200HB.pdf
IXA33IF1200HB
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
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LCA125 LCA125.pdf
LCA125
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Control current max.: 50mA
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+267.26 грн
6+168.19 грн
15+158.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA125S LCA125.pdf
LCA125S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Control current max.: 50mA
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+379.16 грн
6+168.94 грн
15+159.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA120S LCA120.pdf
LCA120S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+196.42 грн
6+146.51 грн
17+138.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCA125LS LCA125L.pdf
LCA125LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Control current max.: 50mA
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+386.40 грн
6+171.92 грн
14+162.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN180N25T IXFN180N25T.pdf
IXFN180N25T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1850.70 грн
2+1625.06 грн
В кошику  од. на суму  грн.
IXTP12N70X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP12N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Power dissipation: 180W
Gate charge: 19nC
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+289.00 грн
3+241.44 грн
5+192.11 грн
13+181.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP12N70X2M littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP12N70X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Power dissipation: 40W
Gate charge: 19nC
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IXFH52N50P2 IXFH(T)52N50P2.pdf
IXFH52N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+833.18 грн
2+553.15 грн
3+552.40 грн
5+522.50 грн
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IXFT52N50P2 IXFH(T)52N50P2.pdf
IXFT52N50P2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO268
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
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IXBOD1-36R IXBOD1_v2.pdf
IXBOD1-36R
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Mounting: THT
Case: BOD
Kind of package: bulk
Max. load current: 0.7A
Breakover voltage: 3.6kV
Type of thyristor: BOD x4
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6546.26 грн
20+5979.25 грн
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IXFH40N50Q IXFH40N50Q.pdf
IXFH40N50Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1077.90 грн
3+946.34 грн
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IXTH40N50L2 IXTH(T,Q)40N50L2.pdf
IXTH40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ40N50L2 IXTH(T,Q)40N50L2.pdf
IXTQ40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT40N50L2 IXTH(T,Q)40N50L2.pdf
IXTT40N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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MCMA25P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.52V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
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MDMA425P1600PTSF MDMA425P1600PTSF.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Case: SimBus F
Max. off-state voltage: 1.6kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
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IXFQ94N30P3 IXFH(Q,T)94N30P3.pdf
IXFQ94N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO3P
Mounting: THT
Kind of package: tube
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 102nC
Kind of channel: enhancement
Case: TO3P
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+744.62 грн
2+586.79 грн
5+554.64 грн
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IXFH94N30P3 IXFH(Q,T)94N30P3.pdf
IXFH94N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+825.93 грн
2+621.17 грн
4+587.54 грн
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IXTX4N300P3HV IXTX4N300P3HV.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 139nC
Technology: Polar3™
Kind of channel: enhancement
Case: TO247PLUS-HV
Reverse recovery time: 420ns
Drain-source voltage: 3kV
Drain current: 4A
Type of transistor: N-MOSFET
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IXTH04N300P3HV IXTH04N300P3HV.pdf
IXTH04N300P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Mounting: THT
Kind of package: tube
Power dissipation: 104W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 13nC
Kind of channel: enhancement
Case: TO247HV
Reverse recovery time: 1.1µs
Drain-source voltage: 3kV
Drain current: 0.4A
On-state resistance: 190Ω
Type of transistor: N-MOSFET
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IXFH94N30T IXFH(T)94N30T.pdf
IXFH94N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO247-3; 155ns
Mounting: THT
Kind of package: tube
Power dissipation: 890W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.19µC
Kind of channel: enhancement
Case: TO247-3
Reverse recovery time: 155ns
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
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IXFT94N30T IXFH(T)94N30T.pdf
IXFT94N30T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns
Mounting: SMD
Kind of package: tube
Power dissipation: 890W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.19µC
Kind of channel: enhancement
Case: TO268
Reverse recovery time: 155ns
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
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IXFT94N30P3 IXFH(Q,T)94N30P3.pdf
IXFT94N30P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
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DSS2X121-0045B description DSS2x121-0045B.pdf
DSS2X121-0045B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2053.56 грн
2+1802.97 грн
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LF21904NTR LF21904NTR.pdf
LF21904NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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LF2190NTR LF2190NTR.pdf
LF2190NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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IXFR90N30 IXFR90N30.pdf
IXFR90N30
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 75A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
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DSI45-16AR DSI45-16AR.pdf
DSI45-16AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 45A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 410A
Case: ISOPLUS247™
Max. forward voltage: 1.23V
Power dissipation: 165W
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+481.39 грн
3+320.68 грн
8+303.48 грн
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MCD310-16io1 MCC310-16IO1.pdf
MCD310-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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XS170STR XS170.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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LBA716STR LBA716.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.4Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
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PLA170STR PLA170.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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LAA108STR LAA108.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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PM1205STR PM1205.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: SMT
Case: DIP6
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LCB110STR LCB110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LCB716STR LCB716.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LCB717STR LCB717.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
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LCB710STR LCB710.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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LBA110STR LBA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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