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IXTY26P10T IXTY26P10T IXYS IXT_26P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
2+228.62 грн
6+156.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP26P10T IXTP26P10T IXYS IXT_26P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
2+237.48 грн
3+198.84 грн
6+158.47 грн
16+149.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA26P10T IXTA26P10T IXYS IXT_26P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXFP6N120P IXFP6N120P IXYS IXFA(H,P)6N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
1+634.34 грн
3+422.34 грн
6+399.16 грн
В кошику  од. на суму  грн.
CMA80MT1600NHR CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 40A
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
1+677.00 грн
2+459.71 грн
6+435.04 грн
10+434.30 грн
30+417.85 грн
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MG17100S-BN4MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: Y4-M5
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
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DSA240X150NA DSA240X150NA IXYS DSA240X150NA.pdf Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.85V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
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IXTA200N055T2 IXTA200N055T2 IXYS IXTA(P)200N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
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CPC5712U CPC5712U IXYS CPC5712.pdf Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
3+181.93 грн
10+106.14 грн
14+65.03 грн
38+62.04 грн
500+59.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEI2X61-02A DSEI2X61-02A IXYS DSEI2x61-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Electrical mounting: screw
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 71A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.95kA
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
1+1828.16 грн
2+1604.88 грн
В кошику  од. на суму  грн.
DSEI2X61-06C DSEI2X61-06C IXYS 96508.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
1+1783.08 грн
2+1565.26 грн
10+1563.77 грн
В кошику  од. на суму  грн.
DSEI2X61-04C DSEI2X61-04C IXYS DSEI2X61-04C.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 62 шт:
термін постачання 21-30 дні (днів)
1+1841.84 грн
2+1616.84 грн
В кошику  од. на суму  грн.
IXFH28N60P3 IXFH28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 600 шт:
термін постачання 21-30 дні (днів)
1+470.12 грн
3+340.11 грн
8+321.42 грн
120+309.46 грн
510+308.72 грн
В кошику  од. на суму  грн.
DPG60C400QB DPG60C400QB IXYS Littelfuse-Power-Semiconductors-DPG60C400QB-Datasheet?assetguid=3C71B727-26DC-4961-AA47-E6824A25148C Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.41V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
1+416.99 грн
3+301.24 грн
8+284.80 грн
В кошику  од. на суму  грн.
DSI45-16A DSI45-16A IXYS DSI45-16A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 45A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.48kA
Case: TO247-2
Max. forward voltage: 1.23V
Power dissipation: 270W
на замовлення 376 шт:
термін постачання 21-30 дні (днів)
2+305.10 грн
5+208.55 грн
12+197.34 грн
120+191.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA110 LCA110 IXYS LCA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
3+144.10 грн
9+100.91 грн
25+94.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCA110S LCA110S IXYS lca110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
3+155.36 грн
10+96.43 грн
26+91.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCA110LS LCA110LS IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Turn-off time: 3ms
Insulation voltage: 3.75kV
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
On-state resistance: 35Ω
Mounting: SMT
Turn-on time: 3ms
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LCA110L LCA110L IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Turn-off time: 3ms
Insulation voltage: 3.75kV
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
On-state resistance: 35Ω
Mounting: THT
Turn-on time: 3ms
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IXFQ22N60P3 IXFQ22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ22N60P IXTQ22N60P IXYS IXTQ22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXTH3N150 IXTH3N150 IXYS IXTH3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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MCC132-14io1 IXYS MCC132-14io1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.04kA
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IXFH140N20X3 IXFH140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 90ns
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
1+920.12 грн
2+642.85 грн
4+607.72 грн
30+606.97 грн
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IXFN140N20P IXFN140N20P IXYS IXFN140N20P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar™
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Electrical mounting: screw
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IXFT140N20X3HV IXFT140N20X3HV IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 90ns
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CPC1014NTR CPC1014NTR IXYS CPC1014N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 2Ω
Case: SOP4
Mounting: SMT
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IXTK22N100L IXTK22N100L IXYS IXTK(X)22N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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MCC132-16io1 MCC132-16io1 IXYS MCC132-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.14V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+4563.54 грн
В кошику  од. на суму  грн.
MCC132-08io1 MCC132-08io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+3925.98 грн
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MCC132-12io1 MCC132-12io1 IXYS L079.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 5.08kA
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+4285.82 грн
В кошику  од. на суму  грн.
MCC132-18IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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MCC132-14IO1B IXYS MCC132-14io1B.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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MCC132-16IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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MCC132-18io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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LCB716 LCB716 IXYS LCB716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 2Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 0.5A
Type of relay: solid state
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+536.94 грн
4+239.20 грн
11+225.74 грн
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DSEI30-12A DSEI30-12A IXYS 92722.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
2+382.38 грн
4+243.68 грн
10+230.23 грн
Мінімальне замовлення: 2
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DCG17P1200HR DCG17P1200HR IXYS DCG17P1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Case: ISO247™
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.2V
Load current: 18A
Semiconductor structure: double series
Max. forward impulse current: 1kA
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: ultrafast switching
Technology: SiC
Mounting: THT
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+6312.81 грн
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DSA60C45HB DSA60C45HB IXYS DSA60C45HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Case: TO247-3
Max. off-state voltage: 45V
Max. forward voltage: 0.66V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.55kA
Power dissipation: 160W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
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DSA60C60PB DSA60C60PB IXYS DSA60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Case: TO220AB
Max. off-state voltage: 60V
Max. forward voltage: 0.77V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.45kA
Power dissipation: 175W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
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IXFK210N30X3 IXFK210N30X3 IXYS IXF_210N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Reverse recovery time: 190ns
Drain-source voltage: 300V
Drain current: 210A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1886.92 грн
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DSEC120-12AK DSEC120-12AK IXYS DSEC120-12AK.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Mounting: THT
Case: TO264
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.66V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 0.5kA
Power dissipation: 330W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+956.34 грн
3+840.19 грн
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XAA117S XAA117S IXYS XAA117.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+276.12 грн
8+122.59 грн
21+115.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117P XAA117P IXYS XAA117.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
2+276.12 грн
8+122.59 грн
21+115.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117 XAA117 IXYS XAA117.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
2+276.12 грн
8+122.59 грн
21+115.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117PTR IXYS XAA117.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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XAA117STR IXYS XAA117.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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CPC1225N CPC1225N IXYS CPC1225N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
4+131.22 грн
10+106.14 грн
11+82.97 грн
29+78.49 грн
Мінімальне замовлення: 4
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CPC1225NTR CPC1225NTR IXYS CPC1225N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
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IXYN100N120C3H1 IXYN100N120C3H1 IXYS IXYN100N120C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 440A
Power dissipation: 690W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+3156.40 грн
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CMA80MT1600NHB IXYS CMA80MT1600NHB.pdf Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 40A
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CMA60MT1600NHB IXYS CMA60MT1600NHB.pdf Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 30A
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CMA60MT1600NHR IXYS CMA60MT1600NHR.pdf Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 30A
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IXFN82N60P IXFN82N60P IXYS IXFN82N60P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 72A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 75mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 200A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
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IXFH42N60P3 IXFH42N60P3 IXYS IXFH42N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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IXFB82N60P IXFB82N60P IXYS IXFB82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+1728.34 грн
2+1517.42 грн
5+1516.68 грн
25+1491.26 грн
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IXTK102N65X2 IXTK102N65X2 IXYS IXTK(X)102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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IXTR102N65X2 IXTR102N65X2 IXYS IXTR102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Power dissipation: 330W
Case: ISOPLUS247™
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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IXTX102N65X2 IXTX102N65X2 IXYS IXTK(X)102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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IXTH64N65X IXTH64N65X IXYS IXTH64N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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IXTY26P10T IXT_26P10T.pdf
IXTY26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+228.62 грн
6+156.23 грн
Мінімальне замовлення: 2
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IXTP26P10T IXT_26P10T.pdf
IXTP26P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+237.48 грн
3+198.84 грн
6+158.47 грн
16+149.50 грн
Мінімальне замовлення: 2
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IXTA26P10T IXT_26P10T.pdf
IXTA26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXFP6N120P IXFA(H,P)6N120P.pdf
IXFP6N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+634.34 грн
3+422.34 грн
6+399.16 грн
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CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
CMA80MT1600NHR
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 40A
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+677.00 грн
2+459.71 грн
6+435.04 грн
10+434.30 грн
30+417.85 грн
В кошику  од. на суму  грн.
MG17100S-BN4MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: Y4-M5
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
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DSA240X150NA DSA240X150NA.pdf
DSA240X150NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.85V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
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IXTA200N055T2 IXTA(P)200N055T2.pdf
IXTA200N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
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CPC5712U CPC5712.pdf
CPC5712U
Виробник: IXYS
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+181.93 грн
10+106.14 грн
14+65.03 грн
38+62.04 грн
500+59.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEI2X61-02A DSEI2x61-02A.pdf
DSEI2X61-02A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Electrical mounting: screw
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 71A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.95kA
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1828.16 грн
2+1604.88 грн
В кошику  од. на суму  грн.
DSEI2X61-06C 96508.pdf
DSEI2X61-06C
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1783.08 грн
2+1565.26 грн
10+1563.77 грн
В кошику  од. на суму  грн.
DSEI2X61-04C DSEI2X61-04C.pdf
DSEI2X61-04C
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 62 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1841.84 грн
2+1616.84 грн
В кошику  од. на суму  грн.
IXFH28N60P3 IXFH(Q)28N60P3.pdf
IXFH28N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 600 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+470.12 грн
3+340.11 грн
8+321.42 грн
120+309.46 грн
510+308.72 грн
В кошику  од. на суму  грн.
DPG60C400QB Littelfuse-Power-Semiconductors-DPG60C400QB-Datasheet?assetguid=3C71B727-26DC-4961-AA47-E6824A25148C
DPG60C400QB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.41V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+416.99 грн
3+301.24 грн
8+284.80 грн
В кошику  од. на суму  грн.
DSI45-16A DSI45-16A.pdf
DSI45-16A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 45A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.48kA
Case: TO247-2
Max. forward voltage: 1.23V
Power dissipation: 270W
на замовлення 376 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+305.10 грн
5+208.55 грн
12+197.34 грн
120+191.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA110 LCA110.pdf
LCA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+144.10 грн
9+100.91 грн
25+94.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCA110S lca110.pdf
LCA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+155.36 грн
10+96.43 грн
26+91.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCA110LS LCA110L.pdf
LCA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Turn-off time: 3ms
Insulation voltage: 3.75kV
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
On-state resistance: 35Ω
Mounting: SMT
Turn-on time: 3ms
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LCA110L LCA110L.pdf
LCA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Turn-off time: 3ms
Insulation voltage: 3.75kV
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
On-state resistance: 35Ω
Mounting: THT
Turn-on time: 3ms
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IXFQ22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFQ22N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ22N60P IXTQ22N60P.pdf
IXTQ22N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXTH3N150 IXTH3N150.pdf
IXTH3N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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MCC132-14io1 MCC132-14io1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.04kA
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IXFH140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFH140N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 90ns
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+920.12 грн
2+642.85 грн
4+607.72 грн
30+606.97 грн
В кошику  од. на суму  грн.
IXFN140N20P description IXFN140N20P.pdf
IXFN140N20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar™
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Electrical mounting: screw
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IXFT140N20X3HV IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFT140N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 90ns
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CPC1014NTR CPC1014N.pdf
CPC1014NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 2Ω
Case: SOP4
Mounting: SMT
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IXTK22N100L IXTK(X)22N100L.pdf
IXTK22N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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MCC132-16io1 MCC132-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCC132-16io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.14V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4563.54 грн
В кошику  од. на суму  грн.
MCC132-08io1 PCN241015_Y4-M6 screw.pdf
MCC132-08io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3925.98 грн
В кошику  од. на суму  грн.
MCC132-12io1 L079.pdf PCN241015_Y4-M6 screw.pdf
MCC132-12io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 5.08kA
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4285.82 грн
В кошику  од. на суму  грн.
MCC132-18IO1B PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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MCC132-14IO1B MCC132-14io1B.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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MCC132-16IO1B PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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MCC132-18io1 PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.36V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
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LCB716 LCB716.pdf
LCB716
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 2Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 0.5A
Type of relay: solid state
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+536.94 грн
4+239.20 грн
11+225.74 грн
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DSEI30-12A 92722.pdf
DSEI30-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+382.38 грн
4+243.68 грн
10+230.23 грн
Мінімальне замовлення: 2
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DCG17P1200HR DCG17P1200HR.pdf
DCG17P1200HR
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Case: ISO247™
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.2V
Load current: 18A
Semiconductor structure: double series
Max. forward impulse current: 1kA
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: ultrafast switching
Technology: SiC
Mounting: THT
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6312.81 грн
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DSA60C45HB DSA60C45HB.pdf
DSA60C45HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Case: TO247-3
Max. off-state voltage: 45V
Max. forward voltage: 0.66V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.55kA
Power dissipation: 160W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
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DSA60C60PB DSA60C60PB.pdf
DSA60C60PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Case: TO220AB
Max. off-state voltage: 60V
Max. forward voltage: 0.77V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.45kA
Power dissipation: 175W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
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IXFK210N30X3 IXF_210N30X3.pdf 300VProductBrief.pdf
IXFK210N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Reverse recovery time: 190ns
Drain-source voltage: 300V
Drain current: 210A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1886.92 грн
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DSEC120-12AK DSEC120-12AK.pdf
DSEC120-12AK
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Mounting: THT
Case: TO264
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.66V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 0.5kA
Power dissipation: 330W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+956.34 грн
3+840.19 грн
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XAA117S XAA117.pdf
XAA117S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+276.12 грн
8+122.59 грн
21+115.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117P XAA117.pdf
XAA117P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+276.12 грн
8+122.59 грн
21+115.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117 XAA117.pdf
XAA117
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+276.12 грн
8+122.59 грн
21+115.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117PTR XAA117.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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XAA117STR XAA117.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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CPC1225N CPC1225N.pdf
CPC1225N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+131.22 грн
10+106.14 грн
11+82.97 грн
29+78.49 грн
Мінімальне замовлення: 4
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CPC1225NTR CPC1225N.pdf
CPC1225NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
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IXYN100N120C3H1 IXYN100N120C3H1.pdf
IXYN100N120C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 440A
Power dissipation: 690W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3156.40 грн
В кошику  од. на суму  грн.
CMA80MT1600NHB CMA80MT1600NHB.pdf
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 40A
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CMA60MT1600NHB CMA60MT1600NHB.pdf
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 30A
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CMA60MT1600NHR CMA60MT1600NHR.pdf
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Max. load current: 30A
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IXFN82N60P description IXFN82N60P.pdf
IXFN82N60P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 72A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 75mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 200A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
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IXFH42N60P3 IXFH42N60P3.pdf
IXFH42N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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IXFB82N60P IXFB82N60P.pdf
IXFB82N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1728.34 грн
2+1517.42 грн
5+1516.68 грн
25+1491.26 грн
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IXTK102N65X2 IXTK(X)102N65X2.pdf
IXTK102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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IXTR102N65X2 IXTR102N65X2.pdf
IXTR102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Power dissipation: 330W
Case: ISOPLUS247™
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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IXTX102N65X2 IXTK(X)102N65X2.pdf
IXTX102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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IXTH64N65X IXTH64N65X.pdf
IXTH64N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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