Продукція > IXYS > Всі товари виробника IXYS (18217) > Сторінка 288 з 304

Обрати Сторінку:   [  << Попередня Сторінка ]  1 30 60 90 120 150 180 210 240 270 283 284 285 286 287 288 289 290 291 292 293 300 304  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
MDMA50P1600TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82F5CADE9380C4&compId=MDMA50P1600TG.pdf?ci_sign=0a5f5597242916f0250f9ce76767b1af5665c5e0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
IXFN50N120SK IXFN50N120SK IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+5428.93 грн
В кошику  од. на суму  грн.
IXFA130N10T2 IXFA130N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXFH230N10T IXFH230N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F37820&compId=IXFH230N10T.pdf?ci_sign=7906ddc75f59da0a6c8caab968b9ecc6143741fa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+677.55 грн
3+427.63 грн
6+404.62 грн
В кошику  од. на суму  грн.
IXFP130N10T2 IXFP130N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
2+268.29 грн
3+223.73 грн
5+202.31 грн
10+198.35 грн
13+191.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1560G CPC1560G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 400µs
On-state resistance: 5.6Ω
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Kind of output: MOSFET
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
2+332.37 грн
5+203.11 грн
13+192.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VVZ110-12IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C861DB90B34D8BF&compId=VVZ110_VVZ175.pdf?ci_sign=07196062ed3a464ff7e33b39e08a02fdb9b7931a Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
товару немає в наявності
В кошику  од. на суму  грн.
IXTH50P10 IXTH50P10 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
на замовлення 306 шт:
термін постачання 21-30 дні (днів)
1+851.85 грн
2+563.30 грн
5+532.36 грн
В кошику  од. на суму  грн.
IXTT50P10 IXTT50P10 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+643.37 грн
2+521.25 грн
5+492.69 грн
10+474.44 грн
В кошику  од. на суму  грн.
IXFP60N25X3M IXFP60N25X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+551.95 грн
3+372.10 грн
7+351.47 грн
В кошику  од. на суму  грн.
IXTN210P10T IXTN210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949FD586272748&compId=IXTN210P10T.pdf?ci_sign=c7eaa6ff621298b381d20e5aabc3375642501283 Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: TrenchP™
Type of semiconductor module: MOSFET transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXTR210P10T IXTR210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04275137A38BF&compId=IXTR210P10T.pdf?ci_sign=6be69c09b119a4bc5566676e52a110aa09280e61 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Technology: TrenchP™
Type of transistor: P-MOSFET
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+2068.53 грн
2+1816.05 грн
30+1746.23 грн
В кошику  од. на суму  грн.
IXTX210P10T IXTX210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03E7174C718BF&compId=IXTX210P10T.pdf?ci_sign=eb9be669937aaa10adc6b2be9042b5a5749257a3 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
Type of transistor: P-MOSFET
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+1919.86 грн
2+1685.14 грн
10+1620.09 грн
В кошику  од. на суму  грн.
CPC1510G CPC1510G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 15Ω
Contacts configuration: SPST-NO
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
2+230.69 грн
6+178.51 грн
15+168.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1510GS CPC1510GS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FDF2EB56DF8BF&compId=CPC1510.pdf?ci_sign=9749f199defe3add8fb64a51a16864787d36708b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 15Ω
Contacts configuration: SPST-NO
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
2+413.54 грн
5+192.79 грн
14+182.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEC16-12A DSEC16-12A IXYS DSEC16-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.94V
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
DSEC16-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4F5F44C2260C4&compId=DSEC16-12AS.pdf?ci_sign=7fe88d45cfa69a339b55e2fa6635825aa1a7704b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: D2PAK
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ120N20P IXTQ120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 714W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+691.22 грн
2+564.89 грн
В кошику  од. на суму  грн.
PLB190 PLB190 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
2+381.07 грн
4+284.82 грн
10+269.75 грн
50+264.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLB190S PLB190S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
2+379.36 грн
4+284.82 грн
10+269.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLB190STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ34N65X2M IXTQ34N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+690.36 грн
2+468.10 грн
3+467.30 грн
6+441.91 грн
В кошику  од. на суму  грн.
IXTQ48N65X2M IXTQ48N65X2M IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+844.16 грн
2+563.30 грн
5+532.36 грн
В кошику  од. на суму  грн.
IXFP60N25X3 IXFP60N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+608.34 грн
3+399.07 грн
7+377.65 грн
100+363.37 грн
В кошику  од. на суму  грн.
IXFK102N30P IXFK102N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957269820&compId=IXFK102N30P.pdf?ci_sign=c151da4b07d5bf21f7c6dd2fd7ca83cee205a948 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+1194.47 грн
2+817.18 грн
4+771.96 грн
В кошику  од. на суму  грн.
IXTH32N65X IXTH32N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
1+545.11 грн
3+363.37 грн
8+343.53 грн
В кошику  од. на суму  грн.
IXFN240N15T2 IXFN240N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF632B0BFD4D820&compId=IXFN240N15T2.pdf?ci_sign=ff1aa251ad84ebead4a899a8d1f4d4e5b551871d Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1624.24 грн
В кошику  од. на суму  грн.
DSS25-0025B DSS25-0025B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAD2C325DCD8BF&compId=DSS25-0025B.pdf?ci_sign=f6f65f217afdcd493a817c25caa07db6fbf77538 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
товару немає в наявності
В кошику  од. на суму  грн.
IXFN36N100 IXFN36N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA766581850B820&compId=IXFN36N100.pdf?ci_sign=ed624506c3a3f62202f258b7df94949020d4b004 description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+5300.77 грн
В кошику  од. на суму  грн.
CPC1973Y CPC1973Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8AE80C7&compId=CPC1973.pdf?ci_sign=91729805be6023b15ac75007105dc829532fec53 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 0.35mA
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 5Ω
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
2+355.44 грн
4+268.16 грн
10+253.88 грн
25+253.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFB82N60Q3 IXFB82N60Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4881A0D0D8A18&compId=IXFB82N60Q3.pdf?ci_sign=45d0b854272d2bfbbaa194f4db1d7265f64eef15 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+949.25 грн
В кошику  од. на суму  грн.
IXTP15P15T IXTP15P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
2+311.01 грн
6+169.78 грн
16+161.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1218Y CPC1218Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21340C7&compId=CPC1218.pdf?ci_sign=9c98dc3d6e8c890d0b45503495283d4f4da9397b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; OptoMOS
Type of relay: solid state
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 1.1Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
1+454.55 грн
4+255.47 грн
11+241.98 грн
В кошику  од. на суму  грн.
CPC1393G CPC1393G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 221 шт:
термін постачання 21-30 дні (днів)
3+165.76 грн
8+121.39 грн
22+115.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1393GV CPC1393GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
2+229.84 грн
8+121.39 грн
22+115.04 грн
500+112.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CMA50P1600FC CMA50P1600FC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF097A4C94098BF&compId=CMA50P1600FC.pdf?ci_sign=b72ced94642464a929aa6ab7e507a6825f1b9885 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS i4-pac™ x024a
товару немає в наявності
В кошику  од. на суму  грн.
DMA50P1200HB DMA50P1200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+486.16 грн
3+322.91 грн
8+305.45 грн
В кошику  од. на суму  грн.
DMA50P1200HR DMA50P1200HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB45968090540C4&compId=DMA50P1200HR.pdf?ci_sign=a806f1fbc18861dcff822bd89a4281ead6ff11bb Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.28V
Load current: 50A
Power dissipation: 210W
Max. forward impulse current: 555A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+876.63 грн
2+583.93 грн
5+552.19 грн
В кошику  од. на суму  грн.
DMA50P1600HB DMA50P1600HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
LDA111 LDA111 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 3.75kV; DIP6
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
LDA111S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
LDA111STR LDA111STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
IXFN66N85X IXFN66N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA70A95430AF820&compId=IXFN66N85X.pdf?ci_sign=2d203018ce9c13744ae92c3349badbac31ecd4da Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+2772.57 грн
В кошику  од. на суму  грн.
PLA140L PLA140L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98E60C7&compId=PLA140L.pdf?ci_sign=e9ab2af998e9385483102ff11a793c893e887522 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP6
Contacts configuration: SPST-NO
Type of relay: solid state
Mounting: THT
Kind of output: MOSFET
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
2+325.53 грн
4+253.88 грн
10+249.92 грн
11+239.60 грн
25+230.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CMA30E1600PB CMA30E1600PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF07E7D1C4758BF&compId=CMA30E1600PB.pdf?ci_sign=93aaff634305ba81457d0cfdba5f3a374fb2216d Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO220AB
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
2+293.92 грн
7+145.19 грн
18+137.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP26N65X2 IXFP26N65X2 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+623.72 грн
3+419.70 грн
7+396.69 грн
В кошику  од. на суму  грн.
IXFN40N110P IXFN40N110P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA812D6D7BDF820&compId=IXFN40N110P.pdf?ci_sign=6226376dd3ad6996a210b08f7f2500c2f3b3461c Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1950.62 грн
В кошику  од. на суму  грн.
IXFN40N110Q3 IXFN40N110Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA817BC850F1820&compId=IXFN40N110Q3.pdf?ci_sign=2c2fccbdd7e7ae4e20d8d950b06dc1a068f013a8 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+1761.80 грн
В кошику  од. на суму  грн.
MCD95-16IO1B MCD95-16IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D70923CA158A50&compId=MCD95-16IO1B-DTE.pdf?ci_sign=2b68c24bb34f43ba3ab2eb5cec3b22c657190eaa pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 116A
Max. load current: 180A
Max. forward impulse current: 2.25kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
1+2688.83 грн
5+2400.78 грн
В кошику  од. на суму  грн.
CPC1540G CPC1540G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 965 шт:
термін постачання 21-30 дні (днів)
2+285.37 грн
7+150.74 грн
18+142.81 грн
500+138.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC2317N CPC2317N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891960C7&compId=CPC2317N.pdf?ci_sign=29adb11cf05dc8881e900756a93efa2a5d0cc008 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Contacts configuration: SPST-NO + SPST-NC
Case: SO8
Type of relay: solid state
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 86 шт:
термін постачання 21-30 дні (днів)
4+137.56 грн
9+103.93 грн
25+97.59 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTP34N65X2 IXTP34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99396442E3226F8BF&compId=IXT_34N65X2.pdf?ci_sign=0ea056e8008ffbda4aac0eaac650eb7fba1e7e65 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXFN60N80P IXFN60N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F24B9F9CDFB820&compId=IXFN60N80P.pdf?ci_sign=559fd8e3a46ccaf185911c21319f68de98543251 description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
1+2834.08 грн
2+2617.37 грн
3+2530.89 грн
В кошику  од. на суму  грн.
IXFH12N100P IXFH12N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECD690369AF8BF&compId=IXFH12N100P.pdf?ci_sign=8751df66a55edb8599692f6d06c233eb891e3c87 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
1+666.44 грн
3+459.37 грн
6+434.77 грн
30+418.11 грн
В кошику  од. на суму  грн.
IXFX300N20X3 IXFX300N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+2047.17 грн
2+1797.01 грн
10+1737.51 грн
В кошику  од. на суму  грн.
IXTH11P50 IXTH11P50 IXYS pVersion=0046&contRep=ZT&docId=E29204E7FB2FFDF19A99005056AB752F&compId=DS94535L(IXTH-T11P50).pdf?ci_sign=75e2ecd6057bd9959b8b067840c0bc20763188af Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
1+846.72 грн
2+614.08 грн
5+579.96 грн
30+579.17 грн
В кошику  од. на суму  грн.
MCD312-16io1 MCD312-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
IXFT24N80P IXFT24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFP7N100P IXFP7N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
2+299.90 грн
10+262.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEI2X61-12B DSEI2X61-12B IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FAEF1A6F5005056AB5A8F&compId=DSEI2x61-12B.pdf?ci_sign=298669366a0a2f4a7f742b95a7bacbc82d17384b description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; SOT227B; screw
Semiconductor structure: double independent
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.5V
Max. off-state voltage: 1.2kV
Max. forward impulse current: 0.5kA
Load current: 52A x2
Type of semiconductor module: diode
на замовлення 130 шт:
термін постачання 21-30 дні (днів)
1+2078.78 грн
2+1824.78 грн
5+1823.19 грн
10+1754.96 грн
В кошику  од. на суму  грн.
MDMA50P1600TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82F5CADE9380C4&compId=MDMA50P1600TG.pdf?ci_sign=0a5f5597242916f0250f9ce76767b1af5665c5e0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
IXFN50N120SK media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet
IXFN50N120SK
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5428.93 грн
В кошику  од. на суму  грн.
IXFA130N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83
IXFA130N10T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXFH230N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F37820&compId=IXFH230N10T.pdf?ci_sign=7906ddc75f59da0a6c8caab968b9ecc6143741fa
IXFH230N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+677.55 грн
3+427.63 грн
6+404.62 грн
В кошику  од. на суму  грн.
IXFP130N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83
IXFP130N10T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+268.29 грн
3+223.73 грн
5+202.31 грн
10+198.35 грн
13+191.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1560G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1
CPC1560G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 400µs
On-state resistance: 5.6Ω
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Kind of output: MOSFET
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+332.37 грн
5+203.11 грн
13+192.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VVZ110-12IO7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C861DB90B34D8BF&compId=VVZ110_VVZ175.pdf?ci_sign=07196062ed3a464ff7e33b39e08a02fdb9b7931a
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
товару немає в наявності
В кошику  од. на суму  грн.
IXTH50P10 pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b
IXTH50P10
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
на замовлення 306 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+851.85 грн
2+563.30 грн
5+532.36 грн
В кошику  од. на суму  грн.
IXTT50P10 pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b
IXTT50P10
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+643.37 грн
2+521.25 грн
5+492.69 грн
10+474.44 грн
В кошику  од. на суму  грн.
IXFP60N25X3M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198
IXFP60N25X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+551.95 грн
3+372.10 грн
7+351.47 грн
В кошику  од. на суму  грн.
IXTN210P10T pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949FD586272748&compId=IXTN210P10T.pdf?ci_sign=c7eaa6ff621298b381d20e5aabc3375642501283
IXTN210P10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: TrenchP™
Type of semiconductor module: MOSFET transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXTR210P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04275137A38BF&compId=IXTR210P10T.pdf?ci_sign=6be69c09b119a4bc5566676e52a110aa09280e61
IXTR210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Technology: TrenchP™
Type of transistor: P-MOSFET
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2068.53 грн
2+1816.05 грн
30+1746.23 грн
В кошику  од. на суму  грн.
IXTX210P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03E7174C718BF&compId=IXTX210P10T.pdf?ci_sign=eb9be669937aaa10adc6b2be9042b5a5749257a3
IXTX210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
Type of transistor: P-MOSFET
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1919.86 грн
2+1685.14 грн
10+1620.09 грн
В кошику  од. на суму  грн.
CPC1510G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56
CPC1510G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 15Ω
Contacts configuration: SPST-NO
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+230.69 грн
6+178.51 грн
15+168.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1510GS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FDF2EB56DF8BF&compId=CPC1510.pdf?ci_sign=9749f199defe3add8fb64a51a16864787d36708b
CPC1510GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 15Ω
Contacts configuration: SPST-NO
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+413.54 грн
5+192.79 грн
14+182.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEC16-12A DSEC16-12A.pdf
DSEC16-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.94V
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
DSEC16-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4F5F44C2260C4&compId=DSEC16-12AS.pdf?ci_sign=7fe88d45cfa69a339b55e2fa6635825aa1a7704b
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: D2PAK
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ120N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3
IXTQ120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 714W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+691.22 грн
2+564.89 грн
В кошику  од. на суму  грн.
PLB190 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
PLB190
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+381.07 грн
4+284.82 грн
10+269.75 грн
50+264.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLB190S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
PLB190S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+379.36 грн
4+284.82 грн
10+269.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLB190STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ34N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec
IXTQ34N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+690.36 грн
2+468.10 грн
3+467.30 грн
6+441.91 грн
В кошику  од. на суму  грн.
IXTQ48N65X2M
IXTQ48N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+844.16 грн
2+563.30 грн
5+532.36 грн
В кошику  од. на суму  грн.
IXFP60N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448
IXFP60N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+608.34 грн
3+399.07 грн
7+377.65 грн
100+363.37 грн
В кошику  од. на суму  грн.
IXFK102N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957269820&compId=IXFK102N30P.pdf?ci_sign=c151da4b07d5bf21f7c6dd2fd7ca83cee205a948
IXFK102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1194.47 грн
2+817.18 грн
4+771.96 грн
В кошику  од. на суму  грн.
IXTH32N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718
IXTH32N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+545.11 грн
3+363.37 грн
8+343.53 грн
В кошику  од. на суму  грн.
IXFN240N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF632B0BFD4D820&compId=IXFN240N15T2.pdf?ci_sign=ff1aa251ad84ebead4a899a8d1f4d4e5b551871d
IXFN240N15T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1624.24 грн
В кошику  од. на суму  грн.
DSS25-0025B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAD2C325DCD8BF&compId=DSS25-0025B.pdf?ci_sign=f6f65f217afdcd493a817c25caa07db6fbf77538
DSS25-0025B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
товару немає в наявності
В кошику  од. на суму  грн.
IXFN36N100 description pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA766581850B820&compId=IXFN36N100.pdf?ci_sign=ed624506c3a3f62202f258b7df94949020d4b004
IXFN36N100
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5300.77 грн
В кошику  од. на суму  грн.
CPC1973Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8AE80C7&compId=CPC1973.pdf?ci_sign=91729805be6023b15ac75007105dc829532fec53
CPC1973Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 0.35mA
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 5Ω
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+355.44 грн
4+268.16 грн
10+253.88 грн
25+253.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFB82N60Q3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4881A0D0D8A18&compId=IXFB82N60Q3.pdf?ci_sign=45d0b854272d2bfbbaa194f4db1d7265f64eef15
IXFB82N60Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+949.25 грн
В кошику  од. на суму  грн.
IXTP15P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac
IXTP15P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+311.01 грн
6+169.78 грн
16+161.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1218Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21340C7&compId=CPC1218.pdf?ci_sign=9c98dc3d6e8c890d0b45503495283d4f4da9397b
CPC1218Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; OptoMOS
Type of relay: solid state
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 1.1Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+454.55 грн
4+255.47 грн
11+241.98 грн
В кошику  од. на суму  грн.
CPC1393G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 221 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+165.76 грн
8+121.39 грн
22+115.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1393GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393GV
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+229.84 грн
8+121.39 грн
22+115.04 грн
500+112.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CMA50P1600FC pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF097A4C94098BF&compId=CMA50P1600FC.pdf?ci_sign=b72ced94642464a929aa6ab7e507a6825f1b9885
CMA50P1600FC
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS i4-pac™ x024a
товару немає в наявності
В кошику  од. на суму  грн.
DMA50P1200HB
DMA50P1200HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+486.16 грн
3+322.91 грн
8+305.45 грн
В кошику  од. на суму  грн.
DMA50P1200HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB45968090540C4&compId=DMA50P1200HR.pdf?ci_sign=a806f1fbc18861dcff822bd89a4281ead6ff11bb
DMA50P1200HR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.28V
Load current: 50A
Power dissipation: 210W
Max. forward impulse current: 555A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+876.63 грн
2+583.93 грн
5+552.19 грн
В кошику  од. на суму  грн.
DMA50P1600HB
DMA50P1600HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
LDA111 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
LDA111
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 3.75kV; DIP6
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
LDA111S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
LDA111STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
LDA111STR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
IXFN66N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA70A95430AF820&compId=IXFN66N85X.pdf?ci_sign=2d203018ce9c13744ae92c3349badbac31ecd4da
IXFN66N85X
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2772.57 грн
В кошику  од. на суму  грн.
PLA140L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98E60C7&compId=PLA140L.pdf?ci_sign=e9ab2af998e9385483102ff11a793c893e887522
PLA140L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP6
Contacts configuration: SPST-NO
Type of relay: solid state
Mounting: THT
Kind of output: MOSFET
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+325.53 грн
4+253.88 грн
10+249.92 грн
11+239.60 грн
25+230.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CMA30E1600PB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF07E7D1C4758BF&compId=CMA30E1600PB.pdf?ci_sign=93aaff634305ba81457d0cfdba5f3a374fb2216d
CMA30E1600PB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO220AB
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+293.92 грн
7+145.19 грн
18+137.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP26N65X2
IXFP26N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+623.72 грн
3+419.70 грн
7+396.69 грн
В кошику  од. на суму  грн.
IXFN40N110P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA812D6D7BDF820&compId=IXFN40N110P.pdf?ci_sign=6226376dd3ad6996a210b08f7f2500c2f3b3461c
IXFN40N110P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1950.62 грн
В кошику  од. на суму  грн.
IXFN40N110Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA817BC850F1820&compId=IXFN40N110Q3.pdf?ci_sign=2c2fccbdd7e7ae4e20d8d950b06dc1a068f013a8
IXFN40N110Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1761.80 грн
В кошику  од. на суму  грн.
MCD95-16IO1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D70923CA158A50&compId=MCD95-16IO1B-DTE.pdf?ci_sign=2b68c24bb34f43ba3ab2eb5cec3b22c657190eaa pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD95-16IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 116A
Max. load current: 180A
Max. forward impulse current: 2.25kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2688.83 грн
5+2400.78 грн
В кошику  од. на суму  грн.
CPC1540G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9
CPC1540G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 965 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+285.37 грн
7+150.74 грн
18+142.81 грн
500+138.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC2317N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891960C7&compId=CPC2317N.pdf?ci_sign=29adb11cf05dc8881e900756a93efa2a5d0cc008
CPC2317N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Contacts configuration: SPST-NO + SPST-NC
Case: SO8
Type of relay: solid state
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 86 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+137.56 грн
9+103.93 грн
25+97.59 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTP34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99396442E3226F8BF&compId=IXT_34N65X2.pdf?ci_sign=0ea056e8008ffbda4aac0eaac650eb7fba1e7e65
IXTP34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXFN60N80P description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F24B9F9CDFB820&compId=IXFN60N80P.pdf?ci_sign=559fd8e3a46ccaf185911c21319f68de98543251
IXFN60N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2834.08 грн
2+2617.37 грн
3+2530.89 грн
В кошику  од. на суму  грн.
IXFH12N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECD690369AF8BF&compId=IXFH12N100P.pdf?ci_sign=8751df66a55edb8599692f6d06c233eb891e3c87
IXFH12N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+666.44 грн
3+459.37 грн
6+434.77 грн
30+418.11 грн
В кошику  од. на суму  грн.
IXFX300N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFX300N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2047.17 грн
2+1797.01 грн
10+1737.51 грн
В кошику  од. на суму  грн.
IXTH11P50 pVersion=0046&contRep=ZT&docId=E29204E7FB2FFDF19A99005056AB752F&compId=DS94535L(IXTH-T11P50).pdf?ci_sign=75e2ecd6057bd9959b8b067840c0bc20763188af
IXTH11P50
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+846.72 грн
2+614.08 грн
5+579.96 грн
30+579.17 грн
В кошику  од. на суму  грн.
MCD312-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da
MCD312-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
IXFT24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFT24N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFP7N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181
IXFP7N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+299.90 грн
10+262.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEI2X61-12B description pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FAEF1A6F5005056AB5A8F&compId=DSEI2x61-12B.pdf?ci_sign=298669366a0a2f4a7f742b95a7bacbc82d17384b
DSEI2X61-12B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; SOT227B; screw
Semiconductor structure: double independent
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.5V
Max. off-state voltage: 1.2kV
Max. forward impulse current: 0.5kA
Load current: 52A x2
Type of semiconductor module: diode
на замовлення 130 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2078.78 грн
2+1824.78 грн
5+1823.19 грн
10+1754.96 грн
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 30 60 90 120 150 180 210 240 270 283 284 285 286 287 288 289 290 291 292 293 300 304  [ Наступна Сторінка >> ]