Продукція > IXYS > Всі товари виробника IXYS (18217) > Сторінка 285 з 304

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IXFR102N30P IXFR102N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A9B820&compId=IXFR102N30P.pdf?ci_sign=67b3ad18f9a19046de4d38e27866ae8ae91d5664 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+1015.04 грн
3+891.76 грн
В кошику  од. на суму  грн.
IXFN44N80P IXFN44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+2228.31 грн
2+1956.48 грн
В кошику  од. на суму  грн.
IXFN44N80Q3 IXFN44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9F937B909F820&compId=IXFN44N80Q3.pdf?ci_sign=fd80aa4819d75a8d19acc0bc3f82bfef6bd57b62 Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXTP60N10T IXTP60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Power dissipation: 176W
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 293 шт:
термін постачання 21-30 дні (днів)
3+159.78 грн
10+99.97 грн
26+94.41 грн
100+91.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFN360N10T IXFN360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5891EC71D8BF&compId=IXFN360N10T.pdf?ci_sign=f49be72713bf6a9d89a1f56881e5f6829ccb1185 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 130ns
Gate charge: 525nC
Kind of channel: enhancement
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
1+1625.95 грн
2+1427.29 грн
10+1372.55 грн
В кошику  од. на суму  грн.
IXTP160N10T IXTP160N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC32F0A59E98BF&compId=IXT_160N10T.pdf?ci_sign=4e0d41f291e819e28cb8f258dae732c56a617f1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 132nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Technology: Trench™
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
2+372.52 грн
5+218.18 грн
12+206.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN44N100Q3 IXFN44N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA77628F9891820&compId=IXFN44N100Q3.pdf?ci_sign=50013891e5e63e84eaa5c1c71ffceb0e2e5badb1 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 264nC
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+4273.77 грн
В кошику  од. на суму  грн.
DSA1-12D DSA1-12D IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
2+284.52 грн
4+240.39 грн
11+227.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH48N65X2 IXTH48N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB08067F19B8BF&compId=IXTH48N65X2.pdf?ci_sign=3fee5355228981f07eb60f0ef37319b01c5dd675 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
на замовлення 256 шт:
термін постачання 21-30 дні (днів)
1+684.38 грн
2+510.94 грн
6+482.38 грн
10+464.13 грн
В кошику  од. на суму  грн.
IXFH60N65X2 IXFH60N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147FA5820&compId=IXFH60N65X2.pdf?ci_sign=c67e1a4e79563fac537565ecfa45bb884c2d9493 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH60N65X2-4 IXFH60N65X2-4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB405CA4C198BF&compId=IXFH60N65X2-4.pdf?ci_sign=68a836b0cb6aa37c0b5648bb269baf9e7eeb72ea Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT60N65X2HV IXFT60N65X2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB44BC9A8438BF&compId=IXFT60N65X2HV.pdf?ci_sign=6e5a6b51c105f18c4ec6d132232fc4d58f2d4e2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: HiPerFET™; X2-Class
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+759.57 грн
2+651.37 грн
4+615.66 грн
В кошику  од. на суму  грн.
IXXH60N65B4 IXXH60N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9B02C1EEBB820&compId=IXXH60N65B4.pdf?ci_sign=a8031f26dadaab9cb288a0d9006d6deb1d61fc37 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
1+545.11 грн
3+363.37 грн
8+343.53 грн
В кошику  од. на суму  грн.
IXXH60N65B4H1 IXXH60N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA41BE37C998BF&compId=IXXH60N65B4H1.pdf?ci_sign=3218f9ada32bbb51384480c616296b03ed0d41c5 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
1+981.72 грн
2+657.71 грн
4+622.01 грн
В кошику  од. на суму  грн.
IXXH60N65C4 IXXH60N65C4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9C1CB239E3820&compId=IXXH60N65C4.pdf?ci_sign=2d606bf4989e65bc1f4779e26a9db028b66a64b7 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXK160N65B4 IXXK160N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA5D65CB90B820&compId=IXXK(x)160N65B4.pdf?ci_sign=9f5367c32f30879b6456d2d25578b70ad46909cd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Technology: GenX4™; Trench; XPT™
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
1+1439.68 грн
2+1263.86 грн
25+1258.30 грн
100+1215.46 грн
В кошику  од. на суму  грн.
IXXK160N65C4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Technology: GenX4™; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXX160N65B4 IXXX160N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA5D65CB90B820&compId=IXXK(x)160N65B4.pdf?ci_sign=9f5367c32f30879b6456d2d25578b70ad46909cd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
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IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Technology: GenX4™; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
DSEC16-06A DSEC16-06A IXYS media?resourcetype=datasheets&itemid=508d2251-0e5c-48cf-8629-cef1a4793aa5&filename=Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.1V
Load current: 10A x2
Max. forward impulse current: 50A
Power dissipation: 60W
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
2+226.42 грн
3+200.73 грн
8+128.53 грн
20+121.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEC16-06AC DSEC16-06AC IXYS media?resourcetype=datasheets&itemid=727180e8-2052-4708-a088-44156766e2f7&filename=Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Max. forward voltage: 2.1V
Load current: 10A x2
Max. forward impulse current: 50A
Power dissipation: 60W
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
IXTA160N04T2 IXTA160N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D343726746F820&compId=IXTA(P)160N04T2.pdf?ci_sign=1ef255f02603c204453a71fc648bc877e8e7741f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP160N04T2 IXTP160N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D343726746F820&compId=IXTA(P)160N04T2.pdf?ci_sign=1ef255f02603c204453a71fc648bc877e8e7741f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH46N65X2 IXFH46N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
1+494.70 грн
6+448.26 грн
10+430.81 грн
В кошику  од. на суму  грн.
CPC1150N CPC1150N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B9CF7BD978BF&compId=CPC1150N.pdf?ci_sign=c821c2d7d5de511af558a9ef727e8d94eaa1df7b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 50Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
Turn-on time: 1ms
Kind of output: MOSFET
на замовлення 504 шт:
термін постачання 21-30 дні (днів)
2+235.82 грн
10+101.55 грн
26+96.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH14N80P IXFH14N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFA180N10T2 IXFA180N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2855F843BCA1820&compId=IXFA(P)180N10T2.pdf?ci_sign=613033688ed8f73bb8407a0f31dc76dac86260fe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
2+323.82 грн
10+294.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP180N10T2 IXFP180N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2855F843BCA1820&compId=IXFA(P)180N10T2.pdf?ci_sign=613033688ed8f73bb8407a0f31dc76dac86260fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 226 шт:
термін постачання 21-30 дні (днів)
1+434.90 грн
3+341.15 грн
4+300.69 грн
9+284.03 грн
50+273.72 грн
В кошику  од. на суму  грн.
IXYH75N65C3H1 IXYH75N65C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9CEAAE3DBB820&compId=IXYH75N65C3H1.pdf?ci_sign=7d4926bc5c44362da56f14cd52c04f1d4cb3fc01 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-off time: 179ns
Turn-on time: 90ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Collector-emitter voltage: 650V
товару немає в наявності
В кошику  од. на суму  грн.
IXYN75N65C3D1 IXYN75N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F345CF0D751820&compId=IXYN75N65C3D1.pdf?ci_sign=b4b795b6798081b53630ff34ac7c75fd76591ca3 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Collector current: 75A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Pulsed collector current: 360A
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
товару немає в наявності
В кошику  од. на суму  грн.
IXFP34N65X2 IXFP34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB353D0CCAB8BF&compId=IXF_34N65X2.pdf?ci_sign=be7eb96a01584ff699e1ad5c4f717dbfd125b3d5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
1+491.29 грн
3+340.36 грн
8+322.11 грн
10+309.42 грн
В кошику  од. на суму  грн.
CPC1106N CPC1106N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75E80C7&compId=CPC1106N.pdf?ci_sign=8c782f12f65952eb66dd4b4c0c46f9f3e8745e8a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 10ms
On-state resistance: 10Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
Turn-on time: 10ms
Kind of output: MOSFET
на замовлення 3338 шт:
термін постачання 21-30 дні (днів)
5+91.42 грн
10+80.13 грн
13+72.99 грн
35+69.02 грн
50+66.64 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CPC1106NTR CPC1106NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75E80C7&compId=CPC1106N.pdf?ci_sign=8c782f12f65952eb66dd4b4c0c46f9f3e8745e8a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 10ms
On-state resistance: 10Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
Turn-on time: 10ms
Kind of output: MOSFET
на замовлення 1417 шт:
термін постачання 21-30 дні (днів)
5+105.09 грн
10+91.24 грн
14+71.40 грн
37+67.44 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXGT72N60A3 IXGT72N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995F26C6047E6B8BF&compId=IXG_72N60A3.pdf?ci_sign=0ce66d2a8d28592d9e3c10534b015eab49abd70e Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Power dissipation: 540W
Case: TO268
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™
Turn-on time: 61ns
Turn-off time: 885ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+884.32 грн
2+586.31 грн
5+554.57 грн
В кошику  од. на суму  грн.
IXGH72N60A3 IXGH72N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995F26C6047E6B8BF&compId=IXG_72N60A3.pdf?ci_sign=0ce66d2a8d28592d9e3c10534b015eab49abd70e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; XPT™
Turn-on time: 61ns
Turn-off time: 885ns
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
1+791.19 грн
3+453.81 грн
6+429.22 грн
120+426.05 грн
В кошику  од. на суму  грн.
DSEI30-06A DSEI30-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB37693C9782143&compId=DSEI30-06A.pdf?ci_sign=eaeeee9ad87e2d11948ab30fc568b22417abb388 description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
товару немає в наявності
В кошику  од. на суму  грн.
IXFA22N60P3 IXFA22N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
2+316.13 грн
3+264.20 грн
4+239.60 грн
10+233.25 грн
11+226.11 грн
50+217.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH22N60P IXFH22N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F07820&compId=IXFH22N60P.pdf?ci_sign=4f0fac1497510e424e4db9366eff4aa9b6962356 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 238 шт:
термін постачання 21-30 дні (днів)
1+528.88 грн
3+391.14 грн
7+369.72 грн
30+364.16 грн
В кошику  од. на суму  грн.
IXFH22N60P3 IXFH22N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 591 шт:
термін постачання 21-30 дні (днів)
1+457.96 грн
4+284.03 грн
10+268.16 грн
120+257.85 грн
В кошику  од. на суму  грн.
IXFP22N60P3 IXFP22N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 143 шт:
термін постачання 21-30 дні (днів)
2+333.22 грн
5+205.49 грн
13+194.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSA120X200LB-TUB DSA120X200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E21202C2B8BF&compId=DSA120X200LB.pdf?ci_sign=cade504b715789123a9bc4b1a6fe7bb93fd83604 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1367.06 грн
В кошику  од. на суму  грн.
IXKH35N60C5 IXKH35N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC723820&compId=IXKH35N60C5.pdf?ci_sign=677b8d3db43cba52c4ebd7ef4e22bc33c3c7302c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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В кошику  од. на суму  грн.
IXKN75N60C IXKN75N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B5CF884CAC483E28&compId=IXKN75N60C-DTE.pdf?ci_sign=0fa51332a57718507258414fc17eaf7b8be70c9b Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 580ns
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: CoolMOS™
товару немає в наявності
В кошику  од. на суму  грн.
IXXH75N60C3 IXXH75N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB419567FC1820&compId=IXXH75N60C3.pdf?ci_sign=9e7c3e8f477c39f364e70435e4f49d0340f77efb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 165ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
товару немає в наявності
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IXXH75N60C3D1 IXXH75N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB43B72332F820&compId=IXXH75N60C3D1.pdf?ci_sign=7226b060f7541cfae9705b803247e882175885cd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFN120N65X2 IXFN120N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9EAC65F2DB820&compId=IXFN120N65X2.pdf?ci_sign=073e54168aecec180c88c9f2f85635c9946f2fa1 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Kind of channel: enhancement
Pulsed drain current: 240A
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate charge: 240nC
Reverse recovery time: 220ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFN26N120P IXFN26N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83340B11AD820&compId=IXFN26N120P.pdf?ci_sign=5573ca8e5e9174590dcdfe9d77701095038e467c Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 255nC
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+2481.21 грн
2+2178.63 грн
В кошику  од. на суму  грн.
CPC1114N CPC1114N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75FE0C7&compId=CPC1114N.pdf?ci_sign=36ecf46fb10f7b97fccf3227e429fc88dfec2307 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 2Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 204 шт:
термін постачання 21-30 дні (днів)
4+139.27 грн
10+108.69 грн
12+81.72 грн
32+76.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTK210P10T IXTK210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794B99F61BE8748&compId=IXTK210P10T.pdf?ci_sign=770cd11c3591d5f99ee9f471b3427981351a0ec8 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: TO264
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
Type of transistor: P-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1832.71 грн
В кошику  од. на суму  грн.
IXTA76N25T IXTA76N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4165ECB579820&compId=IXTA(H%2CI%2CP%2CQ)76N25T.pdf?ci_sign=5561f98ce5cfa59f8e5ad5e0fac5ca227be0863e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTA76P10T IXTA76P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0666B5AC438BF&compId=IXT_76P10T_HV.pdf?ci_sign=885b69a53fc37e69ce9f6124910ae9a6856f96fd Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 137 шт:
термін постачання 21-30 дні (днів)
1+522.90 грн
3+436.36 грн
4+286.41 грн
5+285.62 грн
9+270.54 грн
50+267.37 грн
100+260.23 грн
В кошику  од. на суму  грн.
DSIK45-16AR DSIK45-16AR IXYS media?resourcetype=datasheets&itemid=d16330bf-b369-4dea-afcc-53e43f988a0d&filename=Littelfuse-Power-Semiconductors-DSIK45-16AR-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; tube; Ifsm: 480A; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: rectifying
Max. forward voltage: 1.26V
Power dissipation: 165W
Load current: 45A x2
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+513.50 грн
3+374.48 грн
7+354.64 грн
В кошику  од. на суму  грн.
IXFN110N85X IXFN110N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA717BF78FC3820&compId=IXFN110N85X.pdf?ci_sign=85a84830f40ac335953053a978c96cf3d1863395 Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+5509.25 грн
В кошику  од. на суму  грн.
IXFN150N65X2 IXFN150N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C8B86E1D378BF&compId=IXFN150N65X2.pdf?ci_sign=b8e5f0c766f20f8a34422d633165129f8ae5bd95 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Power dissipation: 1.04kW
Case: SOT227B
Gate charge: 355nC
Reverse recovery time: 190ns
On-state resistance: 17mΩ
Drain current: 145A
Gate-source voltage: ±30V
Pulsed drain current: 300A
Drain-source voltage: 650V
Semiconductor structure: single transistor
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
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IXFN180N15P IXFN180N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5F4741DBF8BF&compId=IXFN180N15P.pdf?ci_sign=30b7d36958ffd7d19dec797319415ee275dcdc97 description Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 150A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 380A
Power dissipation: 680W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 240nC
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+1710.53 грн
2+1501.87 грн
В кошику  од. на суму  грн.
IXFB150N65X2 IXFB150N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED463CFF1A3CA18&compId=IXFB150N65X2.pdf?ci_sign=f5f384917a55461544df260142eaf27680b54781 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Reverse recovery time: 260ns
On-state resistance: 17mΩ
Drain current: 150A
Gate-source voltage: ±30V
Technology: HiPerFET™; X2-Class
Drain-source voltage: 650V
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+2071.95 грн
2+1819.23 грн
10+1789.08 грн
В кошику  од. на суму  грн.
VUO68-16NO7 VUO68-16NO7 IXYS pVersion=0046&contRep=ZT&docId=E2920A1362DBFCF19A99005056AB752F&compId=VUO68-16NO7.pdf?ci_sign=fbd0ecee230da44ce53781abb73e734948a92ccc Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 68A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.5V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
1+1087.67 грн
3+954.44 грн
25+927.46 грн
В кошику  од. на суму  грн.
IX4340N IX4340N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
на замовлення 877 шт:
термін постачання 21-30 дні (днів)
5+97.40 грн
10+56.01 грн
23+41.41 грн
62+39.11 грн
300+37.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IX4340NE IX4340NE IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
на замовлення 920 шт:
термін постачання 21-30 дні (днів)
6+82.88 грн
10+53.24 грн
23+41.10 грн
63+38.88 грн
100+37.76 грн
300+37.45 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IX4340NETR IXYS IX4340NE?assetguid=B6D399FA-9C99-4C15-B6C0-B87CEC93F28F Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
товару немає в наявності
В кошику  од. на суму  грн.
IXFR102N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A9B820&compId=IXFR102N30P.pdf?ci_sign=67b3ad18f9a19046de4d38e27866ae8ae91d5664
IXFR102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1015.04 грн
3+891.76 грн
В кошику  од. на суму  грн.
IXFN44N80P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d
IXFN44N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2228.31 грн
2+1956.48 грн
В кошику  од. на суму  грн.
IXFN44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9F937B909F820&compId=IXFN44N80Q3.pdf?ci_sign=fd80aa4819d75a8d19acc0bc3f82bfef6bd57b62
IXFN44N80Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXTP60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTP60N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Power dissipation: 176W
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 293 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+159.78 грн
10+99.97 грн
26+94.41 грн
100+91.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFN360N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5891EC71D8BF&compId=IXFN360N10T.pdf?ci_sign=f49be72713bf6a9d89a1f56881e5f6829ccb1185
IXFN360N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 130ns
Gate charge: 525nC
Kind of channel: enhancement
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1625.95 грн
2+1427.29 грн
10+1372.55 грн
В кошику  од. на суму  грн.
IXTP160N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC32F0A59E98BF&compId=IXT_160N10T.pdf?ci_sign=4e0d41f291e819e28cb8f258dae732c56a617f1b
IXTP160N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 132nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Technology: Trench™
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+372.52 грн
5+218.18 грн
12+206.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN44N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA77628F9891820&compId=IXFN44N100Q3.pdf?ci_sign=50013891e5e63e84eaa5c1c71ffceb0e2e5badb1
IXFN44N100Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 264nC
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4273.77 грн
В кошику  од. на суму  грн.
DSA1-12D pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a
DSA1-12D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+284.52 грн
4+240.39 грн
11+227.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH48N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB08067F19B8BF&compId=IXTH48N65X2.pdf?ci_sign=3fee5355228981f07eb60f0ef37319b01c5dd675
IXTH48N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
на замовлення 256 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+684.38 грн
2+510.94 грн
6+482.38 грн
10+464.13 грн
В кошику  од. на суму  грн.
IXFH60N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147FA5820&compId=IXFH60N65X2.pdf?ci_sign=c67e1a4e79563fac537565ecfa45bb884c2d9493
IXFH60N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
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IXFH60N65X2-4 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB405CA4C198BF&compId=IXFH60N65X2-4.pdf?ci_sign=68a836b0cb6aa37c0b5648bb269baf9e7eeb72ea
IXFH60N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT60N65X2HV pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB44BC9A8438BF&compId=IXFT60N65X2HV.pdf?ci_sign=6e5a6b51c105f18c4ec6d132232fc4d58f2d4e2f
IXFT60N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: HiPerFET™; X2-Class
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+759.57 грн
2+651.37 грн
4+615.66 грн
В кошику  од. на суму  грн.
IXXH60N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9B02C1EEBB820&compId=IXXH60N65B4.pdf?ci_sign=a8031f26dadaab9cb288a0d9006d6deb1d61fc37
IXXH60N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+545.11 грн
3+363.37 грн
8+343.53 грн
В кошику  од. на суму  грн.
IXXH60N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA41BE37C998BF&compId=IXXH60N65B4H1.pdf?ci_sign=3218f9ada32bbb51384480c616296b03ed0d41c5
IXXH60N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+981.72 грн
2+657.71 грн
4+622.01 грн
В кошику  од. на суму  грн.
IXXH60N65C4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9C1CB239E3820&compId=IXXH60N65C4.pdf?ci_sign=2d606bf4989e65bc1f4779e26a9db028b66a64b7
IXXH60N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXK160N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA5D65CB90B820&compId=IXXK(x)160N65B4.pdf?ci_sign=9f5367c32f30879b6456d2d25578b70ad46909cd
IXXK160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Technology: GenX4™; Trench; XPT™
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1439.68 грн
2+1263.86 грн
25+1258.30 грн
100+1215.46 грн
В кошику  од. на суму  грн.
IXXK160N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Technology: GenX4™; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXX160N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA5D65CB90B820&compId=IXXK(x)160N65B4.pdf?ci_sign=9f5367c32f30879b6456d2d25578b70ad46909cd
IXXX160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Technology: GenX4™; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
DSEC16-06A media?resourcetype=datasheets&itemid=508d2251-0e5c-48cf-8629-cef1a4793aa5&filename=Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet
DSEC16-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.1V
Load current: 10A x2
Max. forward impulse current: 50A
Power dissipation: 60W
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+226.42 грн
3+200.73 грн
8+128.53 грн
20+121.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEC16-06AC media?resourcetype=datasheets&itemid=727180e8-2052-4708-a088-44156766e2f7&filename=Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet
DSEC16-06AC
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Max. forward voltage: 2.1V
Load current: 10A x2
Max. forward impulse current: 50A
Power dissipation: 60W
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
IXTA160N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D343726746F820&compId=IXTA(P)160N04T2.pdf?ci_sign=1ef255f02603c204453a71fc648bc877e8e7741f
IXTA160N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP160N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D343726746F820&compId=IXTA(P)160N04T2.pdf?ci_sign=1ef255f02603c204453a71fc648bc877e8e7741f
IXTP160N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH46N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809
IXFH46N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+494.70 грн
6+448.26 грн
10+430.81 грн
В кошику  од. на суму  грн.
CPC1150N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B9CF7BD978BF&compId=CPC1150N.pdf?ci_sign=c821c2d7d5de511af558a9ef727e8d94eaa1df7b
CPC1150N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 50Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
Turn-on time: 1ms
Kind of output: MOSFET
на замовлення 504 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+235.82 грн
10+101.55 грн
26+96.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH14N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24
IXFH14N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFA180N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2855F843BCA1820&compId=IXFA(P)180N10T2.pdf?ci_sign=613033688ed8f73bb8407a0f31dc76dac86260fe
IXFA180N10T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+323.82 грн
10+294.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP180N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2855F843BCA1820&compId=IXFA(P)180N10T2.pdf?ci_sign=613033688ed8f73bb8407a0f31dc76dac86260fe
IXFP180N10T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 226 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+434.90 грн
3+341.15 грн
4+300.69 грн
9+284.03 грн
50+273.72 грн
В кошику  од. на суму  грн.
IXYH75N65C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9CEAAE3DBB820&compId=IXYH75N65C3H1.pdf?ci_sign=7d4926bc5c44362da56f14cd52c04f1d4cb3fc01
IXYH75N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-off time: 179ns
Turn-on time: 90ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Collector-emitter voltage: 650V
товару немає в наявності
В кошику  од. на суму  грн.
IXYN75N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F345CF0D751820&compId=IXYN75N65C3D1.pdf?ci_sign=b4b795b6798081b53630ff34ac7c75fd76591ca3
IXYN75N65C3D1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Collector current: 75A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Pulsed collector current: 360A
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
товару немає в наявності
В кошику  од. на суму  грн.
IXFP34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB353D0CCAB8BF&compId=IXF_34N65X2.pdf?ci_sign=be7eb96a01584ff699e1ad5c4f717dbfd125b3d5
IXFP34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+491.29 грн
3+340.36 грн
8+322.11 грн
10+309.42 грн
В кошику  од. на суму  грн.
CPC1106N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75E80C7&compId=CPC1106N.pdf?ci_sign=8c782f12f65952eb66dd4b4c0c46f9f3e8745e8a
CPC1106N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 10ms
On-state resistance: 10Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
Turn-on time: 10ms
Kind of output: MOSFET
на замовлення 3338 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+91.42 грн
10+80.13 грн
13+72.99 грн
35+69.02 грн
50+66.64 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CPC1106NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75E80C7&compId=CPC1106N.pdf?ci_sign=8c782f12f65952eb66dd4b4c0c46f9f3e8745e8a
CPC1106NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 10ms
On-state resistance: 10Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
Turn-on time: 10ms
Kind of output: MOSFET
на замовлення 1417 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+105.09 грн
10+91.24 грн
14+71.40 грн
37+67.44 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXGT72N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995F26C6047E6B8BF&compId=IXG_72N60A3.pdf?ci_sign=0ce66d2a8d28592d9e3c10534b015eab49abd70e
IXGT72N60A3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Power dissipation: 540W
Case: TO268
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™
Turn-on time: 61ns
Turn-off time: 885ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+884.32 грн
2+586.31 грн
5+554.57 грн
В кошику  од. на суму  грн.
IXGH72N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995F26C6047E6B8BF&compId=IXG_72N60A3.pdf?ci_sign=0ce66d2a8d28592d9e3c10534b015eab49abd70e
IXGH72N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; XPT™
Turn-on time: 61ns
Turn-off time: 885ns
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+791.19 грн
3+453.81 грн
6+429.22 грн
120+426.05 грн
В кошику  од. на суму  грн.
DSEI30-06A description pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB37693C9782143&compId=DSEI30-06A.pdf?ci_sign=eaeeee9ad87e2d11948ab30fc568b22417abb388
DSEI30-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
товару немає в наявності
В кошику  од. на суму  грн.
IXFA22N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e
IXFA22N60P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+316.13 грн
3+264.20 грн
4+239.60 грн
10+233.25 грн
11+226.11 грн
50+217.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH22N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F07820&compId=IXFH22N60P.pdf?ci_sign=4f0fac1497510e424e4db9366eff4aa9b6962356
IXFH22N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 238 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+528.88 грн
3+391.14 грн
7+369.72 грн
30+364.16 грн
В кошику  од. на суму  грн.
IXFH22N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e
IXFH22N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 591 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+457.96 грн
4+284.03 грн
10+268.16 грн
120+257.85 грн
В кошику  од. на суму  грн.
IXFP22N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD15F39AD0B820&compId=IXFA(H%2CP%2CQ)22N60P3.pdf?ci_sign=977341036c5ff8f78f3d2b3abaff361a11b4088e
IXFP22N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 143 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+333.22 грн
5+205.49 грн
13+194.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSA120X200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E21202C2B8BF&compId=DSA120X200LB.pdf?ci_sign=cade504b715789123a9bc4b1a6fe7bb93fd83604
DSA120X200LB-TUB
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1367.06 грн
В кошику  од. на суму  грн.
IXKH35N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC723820&compId=IXKH35N60C5.pdf?ci_sign=677b8d3db43cba52c4ebd7ef4e22bc33c3c7302c
IXKH35N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXKN75N60C pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B5CF884CAC483E28&compId=IXKN75N60C-DTE.pdf?ci_sign=0fa51332a57718507258414fc17eaf7b8be70c9b
IXKN75N60C
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 580ns
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Technology: CoolMOS™
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В кошику  од. на суму  грн.
IXXH75N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB419567FC1820&compId=IXXH75N60C3.pdf?ci_sign=9e7c3e8f477c39f364e70435e4f49d0340f77efb
IXXH75N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 165ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
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IXXH75N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB43B72332F820&compId=IXXH75N60C3D1.pdf?ci_sign=7226b060f7541cfae9705b803247e882175885cd
IXXH75N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
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IXFN120N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9EAC65F2DB820&compId=IXFN120N65X2.pdf?ci_sign=073e54168aecec180c88c9f2f85635c9946f2fa1
IXFN120N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Kind of channel: enhancement
Pulsed drain current: 240A
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate charge: 240nC
Reverse recovery time: 220ns
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IXFN26N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83340B11AD820&compId=IXFN26N120P.pdf?ci_sign=5573ca8e5e9174590dcdfe9d77701095038e467c
IXFN26N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 255nC
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2481.21 грн
2+2178.63 грн
В кошику  од. на суму  грн.
CPC1114N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75FE0C7&compId=CPC1114N.pdf?ci_sign=36ecf46fb10f7b97fccf3227e429fc88dfec2307
CPC1114N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 2Ω
Contacts configuration: SPST-NC
Manufacturer series: OptoMOS
Turn-on time: 2ms
Kind of output: MOSFET
на замовлення 204 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+139.27 грн
10+108.69 грн
12+81.72 грн
32+76.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTK210P10T pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794B99F61BE8748&compId=IXTK210P10T.pdf?ci_sign=770cd11c3591d5f99ee9f471b3427981351a0ec8
IXTK210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: TO264
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
Type of transistor: P-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1832.71 грн
В кошику  од. на суму  грн.
IXTA76N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4165ECB579820&compId=IXTA(H%2CI%2CP%2CQ)76N25T.pdf?ci_sign=5561f98ce5cfa59f8e5ad5e0fac5ca227be0863e
IXTA76N25T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
IXTA76P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0666B5AC438BF&compId=IXT_76P10T_HV.pdf?ci_sign=885b69a53fc37e69ce9f6124910ae9a6856f96fd
IXTA76P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 137 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+522.90 грн
3+436.36 грн
4+286.41 грн
5+285.62 грн
9+270.54 грн
50+267.37 грн
100+260.23 грн
В кошику  од. на суму  грн.
DSIK45-16AR media?resourcetype=datasheets&itemid=d16330bf-b369-4dea-afcc-53e43f988a0d&filename=Littelfuse-Power-Semiconductors-DSIK45-16AR-Datasheet
DSIK45-16AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; tube; Ifsm: 480A; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: rectifying
Max. forward voltage: 1.26V
Power dissipation: 165W
Load current: 45A x2
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+513.50 грн
3+374.48 грн
7+354.64 грн
В кошику  од. на суму  грн.
IXFN110N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA717BF78FC3820&compId=IXFN110N85X.pdf?ci_sign=85a84830f40ac335953053a978c96cf3d1863395
IXFN110N85X
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5509.25 грн
В кошику  од. на суму  грн.
IXFN150N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C8B86E1D378BF&compId=IXFN150N65X2.pdf?ci_sign=b8e5f0c766f20f8a34422d633165129f8ae5bd95
IXFN150N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Power dissipation: 1.04kW
Case: SOT227B
Gate charge: 355nC
Reverse recovery time: 190ns
On-state resistance: 17mΩ
Drain current: 145A
Gate-source voltage: ±30V
Pulsed drain current: 300A
Drain-source voltage: 650V
Semiconductor structure: single transistor
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
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В кошику  од. на суму  грн.
IXFN180N15P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5F4741DBF8BF&compId=IXFN180N15P.pdf?ci_sign=30b7d36958ffd7d19dec797319415ee275dcdc97
IXFN180N15P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 150A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 380A
Power dissipation: 680W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 240nC
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1710.53 грн
2+1501.87 грн
В кошику  од. на суму  грн.
IXFB150N65X2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED463CFF1A3CA18&compId=IXFB150N65X2.pdf?ci_sign=f5f384917a55461544df260142eaf27680b54781
IXFB150N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Reverse recovery time: 260ns
On-state resistance: 17mΩ
Drain current: 150A
Gate-source voltage: ±30V
Technology: HiPerFET™; X2-Class
Drain-source voltage: 650V
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2071.95 грн
2+1819.23 грн
10+1789.08 грн
В кошику  од. на суму  грн.
VUO68-16NO7 pVersion=0046&contRep=ZT&docId=E2920A1362DBFCF19A99005056AB752F&compId=VUO68-16NO7.pdf?ci_sign=fbd0ecee230da44ce53781abb73e734948a92ccc
VUO68-16NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 68A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.5V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1087.67 грн
3+954.44 грн
25+927.46 грн
В кошику  од. на суму  грн.
IX4340N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350
IX4340N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
на замовлення 877 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+97.40 грн
10+56.01 грн
23+41.41 грн
62+39.11 грн
300+37.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IX4340NE pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350
IX4340NE
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
на замовлення 920 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+82.88 грн
10+53.24 грн
23+41.10 грн
63+38.88 грн
100+37.76 грн
300+37.45 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IX4340NETR IX4340NE?assetguid=B6D399FA-9C99-4C15-B6C0-B87CEC93F28F
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
товару немає в наявності
В кошику  од. на суму  грн.
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