Продукція > IXYS > Всі товари виробника IXYS (18014) > Сторінка 287 з 301

Обрати Сторінку:   [  << Попередня Сторінка ]  1 30 60 90 120 150 180 210 240 270 282 283 284 285 286 287 288 289 290 291 292 300 301  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IXTQ64N25P IXTQ64N25P IXYS IXTQ64N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO3P
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
товару немає в наявності
В кошику  од. на суму  грн.
IXKH70N60C5 IXKH70N60C5 IXYS IXKH70N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
товару немає в наявності
В кошику  од. на суму  грн.
IXKK85N60C IXKK85N60C IXYS IXKK85N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
товару немає в наявності
В кошику  од. на суму  грн.
CLE30E1200PB CLE30E1200PB IXYS CLE30E1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Max. off-state voltage: 1.2kV
Max. load current: 35A
Load current: 30A
Gate current: 50mA
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXTA120P065T IXTA120P065T IXYS IXT_120P065T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: SMD
Case: TO263
на замовлення 277 шт:
термін постачання 21-30 дні (днів)
1+417.80 грн
4+269.85 грн
9+254.90 грн
В кошику  од. на суму  грн.
IXTA120N075T2 IXTA120N075T2 IXYS IXTA(P)120N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Reverse recovery time: 50ns
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
2+242.30 грн
3+202.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGN200N60B3 IXGN200N60B3 IXYS ixgn200n60b3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Mechanical mounting: screw
Technology: GenX3™; PT
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
1+3325.46 грн
3+3039.34 грн
10+2955.62 грн
В кошику  од. на суму  грн.
IXA70I1200NA IXA70I1200NA IXYS IXA70I1200NA.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Mechanical mounting: screw
Features of semiconductor devices: high voltage
Technology: XPT™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+2402.92 грн
2+2110.19 грн
3+2109.44 грн
10+2066.84 грн
В кошику  од. на суму  грн.
DSEI120-06A DSEI120-06A IXYS DSEI120-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 126A
Case: TO247-2
Mounting: THT
Max. forward impulse current: 540A
Max. forward voltage: 1.12V
Kind of package: tube
Semiconductor structure: single diode
Reverse recovery time: 35ns
Power dissipation: 357W
Features of semiconductor devices: fast switching
Technology: FRED
на замовлення 114 шт:
термін постачання 21-30 дні (днів)
1+871.82 грн
2+579.31 грн
5+547.92 грн
В кошику  од. на суму  грн.
DMA150E1600NA DMA150E1600NA IXYS DMA150E1600NA.pdf Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Case: SOT227B
Max. forward impulse current: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.05V
Load current: 150A
Semiconductor structure: single diode
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+2365.90 грн
2+2077.30 грн
10+2076.56 грн
В кошику  од. на суму  грн.
IXFL38N100P IXFL38N100P IXYS IXFL38N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ISOPLUS i5-pac™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 1kV
Drain current: 29A
On-state resistance: 0.23Ω
Power dissipation: 520W
Gate charge: 0.35µC
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+2032.62 грн
2+1785.03 грн
3+1784.28 грн
25+1753.64 грн
В кошику  од. на суму  грн.
IXFN38N100P IXFN38N100P IXYS IXFN38N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Polarisation: unipolar
Case: SOT227B
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.21Ω
Power dissipation: 1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.35µC
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Pulsed drain current: 120A
товару немає в наявності
В кошику  од. на суму  грн.
IXTP110N055T2 IXTP110N055T2 IXYS IXTA(P)110N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
3+139.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP220N04T2 IXTP220N04T2 IXYS IXTA(P)220N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
2+293.02 грн
6+165.94 грн
15+156.98 грн
100+151.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP230N075T2 IXTP230N075T2 IXYS IXTA(P)230N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
1+430.68 грн
3+360.30 грн
4+286.29 грн
9+270.60 грн
В кошику  од. на суму  грн.
IXXN100N60B3H1 IXXN100N60B3H1 IXYS IXXN100N60B3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 440A
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXGN50N120C3H1 IXGN50N120C3H1 IXYS IXGN50N120C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Power dissipation: 460W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1G320N60B3 IXYS MMIX1G320N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-off time: 595ns
Type of transistor: IGBT
Power dissipation: 1kW
Gate charge: 585nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 180A
Pulsed collector current: 1kA
Turn-on time: 107ns
товару немає в наявності
В кошику  од. на суму  грн.
MDD95-16N1B MDD95-16N1B IXYS MDD95-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 180A
на замовлення 107 шт:
термін постачання 21-30 дні (днів)
1+2417.42 грн
2+2122.15 грн
36+2087.77 грн
В кошику  од. на суму  грн.
MCD95-16io8B IXYS MCD95-16IO8B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 116A
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.28V
Case: TO240AA
Mechanical mounting: screw
Kind of package: bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 180A
Semiconductor structure: double series
Gate current: 150/200mA
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
1+2417.42 грн
2+2122.15 грн
10+2087.77 грн
36+2040.68 грн
В кошику  од. на суму  грн.
MDD95-08N1B IXYS PCN210930_TO240 screw.pdf MDD95-08N1B.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 800V; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+2026.18 грн
2+1779.05 грн
В кошику  од. на суму  грн.
IXFK44N50P IXFK44N50P IXYS IXFK44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 44A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 650W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
VHF25-08IO7 VHF25-08IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Case: ECO-PAC 1
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Leads: wire Ø 0.75mm
Max. off-state voltage: 0.8kV
Load current: 32A
Gate current: 25/50mA
Max. forward impulse current: 180A
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+1116.54 грн
2+823.00 грн
3+778.15 грн
В кошику  од. на суму  грн.
VHF25-12IO7 VHF25-12IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Case: ECO-PAC 1
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.2kV
Load current: 32A
Gate current: 25/50mA
Max. forward impulse current: 180A
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+1169.66 грн
2+866.35 грн
3+818.51 грн
В кошику  од. на суму  грн.
CPC1972GS CPC1972GS IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
CPC1972GSTR IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
MCMA140P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf MCMA140P1600TA.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.04kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+2650.06 грн
В кошику  од. на суму  грн.
IXTH26N60P IXTH26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 72nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ76N25T IXTQ76N25T IXYS IXTA(H,I,P,Q)76N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Mounting: THT
Case: TO3P
Reverse recovery time: 148ns
Drain-source voltage: 250V
Drain current: 76A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 92nC
Kind of channel: enhancement
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
1+427.46 грн
3+357.30 грн
4+284.05 грн
9+268.35 грн
В кошику  од. на суму  грн.
LF21844NTR LF21844NTR IXYS LF21844NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
В кошику  од. на суму  грн.
CPC1025N CPC1025N IXYS CPC1025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 30Ω
Case: SOP4
Mounting: SMT
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+201.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MCC56-16io1B MCC56-16io1B IXYS L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Kind of package: bulk
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
1+2026.18 грн
2+1779.05 грн
10+1761.11 грн
36+1710.28 грн
В кошику  од. на суму  грн.
LF2184NTR LF2184NTR IXYS LF2184NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
В кошику  од. на суму  грн.
CPC1150NTR CPC1150NTR IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTH80N075L2 IXTH80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
1+612.60 грн
3+417.85 грн
6+395.43 грн
В кошику  од. на суму  грн.
IXTA80N075L2 IXTA80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
1+723.70 грн
2+630.89 грн
4+596.50 грн
50+585.29 грн
100+573.33 грн
В кошику  од. на суму  грн.
LCA715STR IXYS LCA715.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2.2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.15Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXFK420N10T IXFK420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1055.36 грн
3+926.90 грн
В кошику  од. на суму  грн.
IXFH20N100P IXFH20N100P IXYS IXF_20N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
товару немає в наявності
В кошику  од. на суму  грн.
IXFT20N100P IXFT20N100P IXYS IXF_20N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
товару немає в наявності
В кошику  од. на суму  грн.
IXFX420N10T IXFX420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1F420N10T IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Reverse recovery time: 140ns
Drain-source voltage: 100V
Drain current: 334A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 680W
Polarisation: unipolar
Gate charge: 670nC
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1kA
Mounting: SMD
Case: SMPD
товару немає в наявності
В кошику  од. на суму  грн.
DSEI60-02A DSEI60-02A IXYS DSEI60-02A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Max. off-state voltage: 200V
Load current: 69A
Case: TO247-2
Mounting: THT
Max. forward impulse current: 540A
Max. forward voltage: 0.88V
Kind of package: tube
Semiconductor structure: single diode
Reverse recovery time: 35ns
Power dissipation: 150W
Features of semiconductor devices: fast switching
Technology: FRED
на замовлення 292 шт:
термін постачання 21-30 дні (днів)
1+487.83 грн
3+325.16 грн
8+307.22 грн
В кошику  од. на суму  грн.
PM1204 PM1204 IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
1+540.16 грн
4+267.60 грн
9+252.66 грн
В кошику  од. на суму  грн.
PM1205 PM1205 IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
2+382.38 грн
4+269.10 грн
9+254.15 грн
100+251.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM1204S PM1204S IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
1+605.36 грн
4+270.60 грн
9+255.64 грн
В кошику  од. на суму  грн.
MDA72-16N1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.6V
Load current: 113A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 1.54kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+2216.16 грн
2+1945.74 грн
В кошику  од. на суму  грн.
MDA72-08N1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double,common anode; 800V; If: 113Ax2; TO240AA
Case: TO240AA
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.6V
Load current: 113A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 1.54kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товару немає в наявності
В кошику  од. на суму  грн.
IXTA380N036T4-7 IXTA380N036T4-7 IXYS IXTA380N036T4-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 54ns
товару немає в наявності
В кошику  од. на суму  грн.
IXBH20N300 IXBH20N300 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 105nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 3kV
товару немає в наявності
В кошику  од. на суму  грн.
CS20-12IO1 CS20-12IO1 IXYS CS20-12IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Max. forward impulse current: 260A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
2+332.46 грн
3+272.84 грн
4+248.17 грн
10+234.72 грн
30+228.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA15E1200NPZ-TUB CLA15E1200NPZ-TUB IXYS CLA15E1200NPZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 15A
Gate current: 20/40mA
Max. forward impulse current: 0.145kA
Kind of package: tube
Features of semiconductor devices: two gate polarities
Type of thyristor: thyristor
Mounting: SMD
Case: TO263ABHV
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
3+125.58 грн
9+100.16 грн
25+94.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MDD56-16N1B MDD56-16N1B IXYS MDD56-16N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 150A
Max. forward voltage: 1.14V
Load current: 71A
Semiconductor structure: double series
Max. forward impulse current: 1.19kA
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
1+1830.57 грн
2+1607.12 грн
36+1583.95 грн
В кошику  од. на суму  грн.
MDD175-34N1 MDD175-34N1 IXYS MDD175-34N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 3.4kV; If: 240A; Y1-CU; Ufmax: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 3.4kV
Max. forward voltage: 1.01V
Load current: 240A
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
IXTJ4N150 IXTJ4N150 IXYS IXTJ4N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA4N150HV IXTA4N150HV IXYS IXTA(T)4N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH4N150 IXTH4N150 IXYS IXTH4N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT4N150HV IXTT4N150HV IXYS IXTA(T)4N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товару немає в наявності
В кошику  од. на суму  грн.
DPF240X400NA DPF240X400NA IXYS DPF240X400NA.pdf Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
1+2802.20 грн
В кошику  од. на суму  грн.
IXTQ64N25P IXTQ64N25P-DTE.pdf
IXTQ64N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO3P
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
товару немає в наявності
В кошику  од. на суму  грн.
IXKH70N60C5 IXKH70N60C5.pdf
IXKH70N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
товару немає в наявності
В кошику  од. на суму  грн.
IXKK85N60C IXKK85N60C.pdf
IXKK85N60C
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
товару немає в наявності
В кошику  од. на суму  грн.
CLE30E1200PB CLE30E1200PB.pdf
CLE30E1200PB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Max. off-state voltage: 1.2kV
Max. load current: 35A
Load current: 30A
Gate current: 50mA
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXTA120P065T IXT_120P065T.pdf
IXTA120P065T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Reverse recovery time: 53ns
Drain-source voltage: -65V
Drain current: -120A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: SMD
Case: TO263
на замовлення 277 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+417.80 грн
4+269.85 грн
9+254.90 грн
В кошику  од. на суму  грн.
IXTA120N075T2 IXTA(P)120N075T2.pdf
IXTA120N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Reverse recovery time: 50ns
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+242.30 грн
3+202.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGN200N60B3 ixgn200n60b3.pdf
IXGN200N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Mechanical mounting: screw
Technology: GenX3™; PT
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3325.46 грн
3+3039.34 грн
10+2955.62 грн
В кошику  од. на суму  грн.
IXA70I1200NA IXA70I1200NA.pdf
IXA70I1200NA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Mechanical mounting: screw
Features of semiconductor devices: high voltage
Technology: XPT™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2402.92 грн
2+2110.19 грн
3+2109.44 грн
10+2066.84 грн
В кошику  од. на суму  грн.
DSEI120-06A DSEI120-06A.pdf
DSEI120-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 126A
Case: TO247-2
Mounting: THT
Max. forward impulse current: 540A
Max. forward voltage: 1.12V
Kind of package: tube
Semiconductor structure: single diode
Reverse recovery time: 35ns
Power dissipation: 357W
Features of semiconductor devices: fast switching
Technology: FRED
на замовлення 114 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+871.82 грн
2+579.31 грн
5+547.92 грн
В кошику  од. на суму  грн.
DMA150E1600NA DMA150E1600NA.pdf
DMA150E1600NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Case: SOT227B
Max. forward impulse current: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.05V
Load current: 150A
Semiconductor structure: single diode
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2365.90 грн
2+2077.30 грн
10+2076.56 грн
В кошику  од. на суму  грн.
IXFL38N100P IXFL38N100P.pdf
IXFL38N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ISOPLUS i5-pac™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 1kV
Drain current: 29A
On-state resistance: 0.23Ω
Power dissipation: 520W
Gate charge: 0.35µC
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2032.62 грн
2+1785.03 грн
3+1784.28 грн
25+1753.64 грн
В кошику  од. на суму  грн.
IXFN38N100P IXFN38N100P.pdf
IXFN38N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Polarisation: unipolar
Case: SOT227B
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.21Ω
Power dissipation: 1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.35µC
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Pulsed drain current: 120A
товару немає в наявності
В кошику  од. на суму  грн.
IXTP110N055T2 IXTA(P)110N055T2.pdf
IXTP110N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+139.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP220N04T2 IXTA(P)220N04T2.pdf
IXTP220N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+293.02 грн
6+165.94 грн
15+156.98 грн
100+151.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP230N075T2 IXTA(P)230N075T2.pdf
IXTP230N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+430.68 грн
3+360.30 грн
4+286.29 грн
9+270.60 грн
В кошику  од. на суму  грн.
IXXN100N60B3H1 IXXN100N60B3H1.pdf
IXXN100N60B3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 440A
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXGN50N120C3H1 IXGN50N120C3H1.pdf
IXGN50N120C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Power dissipation: 460W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1G320N60B3 MMIX1G320N60B3.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-off time: 595ns
Type of transistor: IGBT
Power dissipation: 1kW
Gate charge: 585nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 180A
Pulsed collector current: 1kA
Turn-on time: 107ns
товару немає в наявності
В кошику  од. на суму  грн.
MDD95-16N1B MDD95-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD95-16N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 180A
на замовлення 107 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2417.42 грн
2+2122.15 грн
36+2087.77 грн
В кошику  од. на суму  грн.
MCD95-16io8B MCD95-16IO8B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 116A
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.28V
Case: TO240AA
Mechanical mounting: screw
Kind of package: bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 180A
Semiconductor structure: double series
Gate current: 150/200mA
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2417.42 грн
2+2122.15 грн
10+2087.77 грн
36+2040.68 грн
В кошику  од. на суму  грн.
MDD95-08N1B PCN210930_TO240 screw.pdf MDD95-08N1B.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 120A; TO240AA; Ufmax: 1.13V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.13V
Load current: 120A
Semiconductor structure: double series
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2026.18 грн
2+1779.05 грн
В кошику  од. на суму  грн.
IXFK44N50P IXFK44N50P.pdf
IXFK44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 44A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 650W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
VHF25-08IO7 VHF25-ser.pdf
VHF25-08IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Case: ECO-PAC 1
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Leads: wire Ø 0.75mm
Max. off-state voltage: 0.8kV
Load current: 32A
Gate current: 25/50mA
Max. forward impulse current: 180A
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1116.54 грн
2+823.00 грн
3+778.15 грн
В кошику  од. на суму  грн.
VHF25-12IO7 VHF25-ser.pdf
VHF25-12IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Case: ECO-PAC 1
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.2kV
Load current: 32A
Gate current: 25/50mA
Max. forward impulse current: 180A
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1169.66 грн
2+866.35 грн
3+818.51 грн
В кошику  од. на суму  грн.
CPC1972GS CPC1972.pdf
CPC1972GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
CPC1972GSTR CPC1972.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
MCMA140P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf MCMA140P1600TA.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.04kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2650.06 грн
В кошику  од. на суму  грн.
IXTH26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTH26N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 72nC
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ76N25T IXTA(H,I,P,Q)76N25T.pdf
IXTQ76N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Mounting: THT
Case: TO3P
Reverse recovery time: 148ns
Drain-source voltage: 250V
Drain current: 76A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 92nC
Kind of channel: enhancement
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+427.46 грн
3+357.30 грн
4+284.05 грн
9+268.35 грн
В кошику  од. на суму  грн.
LF21844NTR LF21844NTR.pdf
LF21844NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
В кошику  од. на суму  грн.
CPC1025N CPC1025N.pdf
CPC1025N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 30Ω
Case: SOP4
Mounting: SMT
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+201.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MCC56-16io1B L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC56-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Kind of package: bulk
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2026.18 грн
2+1779.05 грн
10+1761.11 грн
36+1710.28 грн
В кошику  од. на суму  грн.
LF2184NTR LF2184NTR.pdf
LF2184NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
В кошику  од. на суму  грн.
CPC1150NTR CPC1150N.pdf
CPC1150NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTH80N075L2 IXTA(H,P)80N075L2.pdf
IXTH80N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+612.60 грн
3+417.85 грн
6+395.43 грн
В кошику  од. на суму  грн.
IXTA80N075L2 IXTA(H,P)80N075L2.pdf
IXTA80N075L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+723.70 грн
2+630.89 грн
4+596.50 грн
50+585.29 грн
100+573.33 грн
В кошику  од. на суму  грн.
LCA715STR LCA715.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2.2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.15Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXFK420N10T IXFK420N10T_IXFX420N10T.pdf
IXFK420N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1055.36 грн
3+926.90 грн
В кошику  од. на суму  грн.
IXFH20N100P IXF_20N100P.pdf
IXFH20N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
товару немає в наявності
В кошику  од. на суму  грн.
IXFT20N100P IXF_20N100P.pdf
IXFT20N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
товару немає в наявності
В кошику  од. на суму  грн.
IXFX420N10T IXFK420N10T_IXFX420N10T.pdf
IXFX420N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1F420N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Reverse recovery time: 140ns
Drain-source voltage: 100V
Drain current: 334A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 680W
Polarisation: unipolar
Gate charge: 670nC
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1kA
Mounting: SMD
Case: SMPD
товару немає в наявності
В кошику  од. на суму  грн.
DSEI60-02A description DSEI60-02A.pdf
DSEI60-02A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Max. off-state voltage: 200V
Load current: 69A
Case: TO247-2
Mounting: THT
Max. forward impulse current: 540A
Max. forward voltage: 0.88V
Kind of package: tube
Semiconductor structure: single diode
Reverse recovery time: 35ns
Power dissipation: 150W
Features of semiconductor devices: fast switching
Technology: FRED
на замовлення 292 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+487.83 грн
3+325.16 грн
8+307.22 грн
В кошику  од. на суму  грн.
PM1204 PM1204.pdf
PM1204
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+540.16 грн
4+267.60 грн
9+252.66 грн
В кошику  од. на суму  грн.
PM1205 PM1205.pdf
PM1205
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+382.38 грн
4+269.10 грн
9+254.15 грн
100+251.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM1204S PM1204.pdf
PM1204S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+605.36 грн
4+270.60 грн
9+255.64 грн
В кошику  од. на суму  грн.
MDA72-16N1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.6V
Load current: 113A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 1.54kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2216.16 грн
2+1945.74 грн
В кошику  од. на суму  грн.
MDA72-08N1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 800V; If: 113Ax2; TO240AA
Case: TO240AA
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.6V
Load current: 113A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 1.54kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товару немає в наявності
В кошику  од. на суму  грн.
IXTA380N036T4-7 IXTA380N036T4-7.pdf
IXTA380N036T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 54ns
товару немає в наявності
В кошику  од. на суму  грн.
IXBH20N300
IXBH20N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 105nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 3kV
товару немає в наявності
В кошику  од. на суму  грн.
CS20-12IO1 CS20-12IO1-DTE.pdf
CS20-12IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Max. forward impulse current: 260A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+332.46 грн
3+272.84 грн
4+248.17 грн
10+234.72 грн
30+228.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA15E1200NPZ-TUB CLA15E1200NPZ.pdf
CLA15E1200NPZ-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 15A
Gate current: 20/40mA
Max. forward impulse current: 0.145kA
Kind of package: tube
Features of semiconductor devices: two gate polarities
Type of thyristor: thyristor
Mounting: SMD
Case: TO263ABHV
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+125.58 грн
9+100.16 грн
25+94.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MDD56-16N1B MDD56-16N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD56-16N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 150A
Max. forward voltage: 1.14V
Load current: 71A
Semiconductor structure: double series
Max. forward impulse current: 1.19kA
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1830.57 грн
2+1607.12 грн
36+1583.95 грн
В кошику  од. на суму  грн.
MDD175-34N1 MDD175-34N1-DTE.pdf
MDD175-34N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 3.4kV; If: 240A; Y1-CU; Ufmax: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 3.4kV
Max. forward voltage: 1.01V
Load current: 240A
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
IXTJ4N150 IXTJ4N150.pdf
IXTJ4N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA4N150HV IXTA(T)4N150HV.pdf
IXTA4N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH4N150 IXTH4N150.pdf
IXTH4N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT4N150HV IXTA(T)4N150HV.pdf
IXTT4N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товару немає в наявності
В кошику  од. на суму  грн.
DPF240X400NA DPF240X400NA.pdf
DPF240X400NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2802.20 грн
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 30 60 90 120 150 180 210 240 270 282 283 284 285 286 287 288 289 290 291 292 300 301  [ Наступна Сторінка >> ]