| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXTH260N055T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns Kind of channel: enhancement Case: TO247-3 Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Drain-source voltage: 55V Drain current: 260A Reverse recovery time: 60ns Gate charge: 0.14µC On-state resistance: 3.3mΩ Power dissipation: 480W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTH360N055T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns Kind of channel: enhancement Case: TO247-3 Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Drain-source voltage: 55V Drain current: 360A Reverse recovery time: 78ns Gate charge: 330nC On-state resistance: 2.4mΩ Power dissipation: 935W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTH10P60 | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns Kind of channel: enhancement Case: TO247-3 Type of transistor: P-MOSFET Kind of package: tube Mounting: THT Drain-source voltage: -600V Drain current: -10A Reverse recovery time: 0.5µs Gate charge: 135nC On-state resistance: 1Ω Power dissipation: 300W Gate-source voltage: ±20V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTH16P60P | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3 Kind of channel: enhancement Case: TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Kind of package: tube Mounting: THT Drain-source voltage: -600V Drain current: -16A Reverse recovery time: 440ns Gate charge: 92nC On-state resistance: 720mΩ Power dissipation: 460W Gate-source voltage: ±20V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTH26N60P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns Kind of channel: enhancement Case: TO247-3 Features of semiconductor devices: standard power mosfet Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Drain-source voltage: 600V Drain current: 26A Reverse recovery time: 0.5µs Gate charge: 72nC On-state resistance: 0.27Ω Power dissipation: 460W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFH60N50P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 96nC Kind of channel: enhancement Reverse recovery time: 250ns Kind of package: tube |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
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IXTN60N50L2 | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 53A Pulsed drain current: 150A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.1Ω Gate charge: 610nC Kind of channel: enhancement Reverse recovery time: 980ns Electrical mounting: screw Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTK60N50L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 960W Case: TO264 On-state resistance: 0.1Ω Mounting: THT Gate charge: 610nC Kind of channel: enhancement Reverse recovery time: 980ns Kind of package: tube Features of semiconductor devices: linear power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFQ60N50P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO3P On-state resistance: 0.11Ω Mounting: THT Gate charge: 96nC Kind of channel: enhancement Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTX60N50L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 610nC Kind of channel: enhancement Reverse recovery time: 980ns Kind of package: tube Features of semiconductor devices: linear power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFT60N50P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO268 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 96nC Kind of channel: enhancement Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1977J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 1.25A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 1Ω Mounting: THT Case: i4-pac Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DSA120X200LB-TRR | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SMPD Max. forward voltage: 0.67V Load current: 65A x2 Power dissipation: 185W Max. off-state voltage: 200V Max. forward impulse current: 700A Semiconductor structure: double independent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXCP10M45S | IXYS |
Category: Integrated circuits - othersDescription: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: TO220AB Mounting: THT Operating temperature: -55...150°C Operating voltage: 450V DC Power dissipation: 40W Operating current: 2...100mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTH6N50D2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 300W Case: TO247-3 On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 64ns |
на замовлення 215 шт: термін постачання 21-30 дні (днів) |
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IXTP6N50D2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 300W Case: TO220AB On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 64ns |
на замовлення 159 шт: термін постачання 21-30 дні (днів) |
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IXTA6N50D2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 300W Case: TO263 On-state resistance: 0.5Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 64ns |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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CPC3982TTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.15A Power dissipation: 0.4W Case: SOT23 On-state resistance: 380Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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CPC3708CTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 1.8W Case: SOT89 On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V |
на замовлення 2575 шт: термін постачання 21-30 дні (днів) |
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CPC5603CTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 415V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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CPC3703CTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.36A Power dissipation: 1.1W Case: SOT89 On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 1980 шт: термін постачання 21-30 дні (днів) |
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CPC3701CTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.6A Power dissipation: 1.1W Case: SOT89 On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 310 шт: термін постачання 21-30 дні (днів) |
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CPC5602CTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V |
на замовлення 577 шт: термін постачання 21-30 дні (днів) |
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CPC3902ZTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.4A Power dissipation: 1.8W Case: SOT223 On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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CPC3708ZTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V |
на замовлення 885 шт: термін постачання 21-30 дні (днів) |
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CPC3720CTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 1.4W Case: SOT89 On-state resistance: 22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 376 шт: термін постачання 21-30 дні (днів) |
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CPC3730CTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.14A Power dissipation: 1.4W Case: SOT89 On-state resistance: 35Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IXTP3N50D2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 125W Case: TO220AB On-state resistance: 1.5Ω Mounting: THT Gate charge: 1.07µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 24ns |
на замовлення 275 шт: термін постачання 21-30 дні (днів) |
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IXTH50P10 | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns |
на замовлення 306 шт: термін постачання 21-30 дні (днів) |
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IXTT50P10 | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 300W Case: TO268 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IXTQ470P2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns Case: TO3P Mounting: THT On-state resistance: 0.145Ω Kind of package: tube Features of semiconductor devices: standard power mosfet Polarisation: unipolar Gate charge: 88nC Reverse recovery time: 400ns Drain current: 42A Drain-source voltage: 500V Power dissipation: 830W Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTH260N055T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 55V
Drain current: 260A
Reverse recovery time: 60ns
Gate charge: 0.14µC
On-state resistance: 3.3mΩ
Power dissipation: 480W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 55V
Drain current: 260A
Reverse recovery time: 60ns
Gate charge: 0.14µC
On-state resistance: 3.3mΩ
Power dissipation: 480W
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| IXTH360N055T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 55V
Drain current: 360A
Reverse recovery time: 78ns
Gate charge: 330nC
On-state resistance: 2.4mΩ
Power dissipation: 935W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 55V
Drain current: 360A
Reverse recovery time: 78ns
Gate charge: 330nC
On-state resistance: 2.4mΩ
Power dissipation: 935W
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| IXTH10P60 |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -10A
Reverse recovery time: 0.5µs
Gate charge: 135nC
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -10A
Reverse recovery time: 0.5µs
Gate charge: 135nC
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| IXTH16P60P |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -16A
Reverse recovery time: 440ns
Gate charge: 92nC
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -16A
Reverse recovery time: 440ns
Gate charge: 92nC
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| IXTH26N60P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 600V
Drain current: 26A
Reverse recovery time: 0.5µs
Gate charge: 72nC
On-state resistance: 0.27Ω
Power dissipation: 460W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 600V
Drain current: 26A
Reverse recovery time: 0.5µs
Gate charge: 72nC
On-state resistance: 0.27Ω
Power dissipation: 460W
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| IXFH60N50P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
на замовлення 352 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 575.81 грн |
| 5+ | 478.91 грн |
| IXTN60N50L2 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Mechanical mounting: screw
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| IXTK60N50L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
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| IXFQ60N50P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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| IXTX60N50L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
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| IXFT60N50P3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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| CPC1977J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| DSA120X200LB-TRR |
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
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| IXCP10M45S |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
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| IXTH6N50D2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 728.59 грн |
| 10+ | 560.10 грн |
| 30+ | 524.02 грн |
| 120+ | 478.91 грн |
| IXTP6N50D2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 159 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 550.20 грн |
| 10+ | 466.61 грн |
| 50+ | 373.95 грн |
| IXTA6N50D2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 650.87 грн |
| 10+ | 496.14 грн |
| CPC3982TTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.62 грн |
| 13+ | 32.15 грн |
| 100+ | 23.13 грн |
| 500+ | 18.21 грн |
| 1000+ | 18.04 грн |
| CPC3708CTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 2575 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.39 грн |
| 13+ | 33.62 грн |
| 100+ | 28.70 грн |
| 500+ | 26.90 грн |
| CPC5603CTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.75 грн |
| 11+ | 39.69 грн |
| 100+ | 33.38 грн |
| CPC3703CTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 1980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.18 грн |
| 10+ | 50.60 грн |
| 50+ | 38.38 грн |
| 100+ | 34.20 грн |
| 250+ | 29.44 грн |
| 500+ | 27.96 грн |
| CPC3701CTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 310 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.00 грн |
| 10+ | 42.73 грн |
| 100+ | 30.92 грн |
| CPC5602CTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 577 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.00 грн |
| 10+ | 45.68 грн |
| 50+ | 35.92 грн |
| 100+ | 32.56 грн |
| 250+ | 28.54 грн |
| 500+ | 26.98 грн |
| CPC3902ZTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.95 грн |
| 10+ | 47.07 грн |
| CPC3708ZTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 885 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.48 грн |
| 10+ | 49.53 грн |
| 100+ | 38.38 грн |
| 500+ | 31.33 грн |
| CPC3720CTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 376 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 62.70 грн |
| 13+ | 33.13 грн |
| 25+ | 30.34 грн |
| 100+ | 26.73 грн |
| 250+ | 24.52 грн |
| CPC3730CTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.47 грн |
| 11+ | 38.21 грн |
| IXTP3N50D2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
на замовлення 275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 275.54 грн |
| 10+ | 189.43 грн |
| IXTH50P10 |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
на замовлення 306 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 816.02 грн |
| 10+ | 646.21 грн |
| 30+ | 606.02 грн |
| 120+ | 556.00 грн |
| 270+ | 529.76 грн |
| IXTT50P10 |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 731.24 грн |
| 3+ | 600.28 грн |
| 10+ | 538.78 грн |
| IXTQ470P2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Type of transistor: N-MOSFET
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