Продукція > IXYS > Всі товари виробника IXYS (18217) > Сторінка 292 з 304

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IXFK26N100P IXFK26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Case: TO264
Mounting: THT
Reverse recovery time: 300ns
On-state resistance: 390mΩ
Drain current: 26A
Gate-source voltage: ±30V
Power dissipation: 780W
Drain-source voltage: 1kV
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
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FBE22-06N1 FBE22-06N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F5933B49D018BF&compId=FBE22-06N1.pdf?ci_sign=7ea1713ca283cb8800d681aa2a8c9d4a27a181dc Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
1+1084.25 грн
2+755.30 грн
4+714.04 грн
25+695.80 грн
В кошику  од. на суму  грн.
IXKC23N60C5 IXKC23N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6CB820&compId=IXKC23N60C5.pdf?ci_sign=c1a5b75b3ab726fbed4e498e342a467c0b978d16 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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CPC1302GSTR CPC1302GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA7859A3521EC&compId=CPC1302.pdf?ci_sign=144bfd2503e02a373942f882ef05b0562a26aa60 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 1µs
Turn-off time: 80µs
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 2
Max. off-state voltage: 5V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
3+201.64 грн
9+111.07 грн
23+105.52 грн
Мінімальне замовлення: 3
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MEA75-12DA MEA75-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Semiconductor structure: common anode
Electrical mounting: screw
Mechanical mounting: screw
Load current: 75A
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
на замовлення 61 шт:
термін постачання 21-30 дні (днів)
1+2077.08 грн
2+1823.99 грн
В кошику  од. на суму  грн.
MCB20P1200LB-TUB MCB20P1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
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MCB20P1200LB-TRR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
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DSEE55-24N1F DSEE55-24N1F IXYS Littelfuse-Power-Semiconductors-DSEE55-24N1F-Datasheet?assetguid=bbc3c036-3bc3-4bdd-bdc6-79f0ab7a10f9 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V
Max. forward voltage: 1.56V
Load current: 60A
Power dissipation: 250W
Max. forward impulse current: 0.8kA
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
Case: ISOPLUS i4-pac™ x024b
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Reverse recovery time: 85ns
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IXTQ22N50P IXTQ22N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
1+427.21 грн
4+250.71 грн
11+237.22 грн
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IXFH22N50P IXFH22N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC111820&compId=IXFH22N50P.pdf?ci_sign=8586e5293aa35f9bb95f912636881d81bf896a89 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
1+443.44 грн
4+306.25 грн
9+289.58 грн
120+278.48 грн
В кошику  од. на суму  грн.
IXFH52N50P2 IXFH52N50P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B656662E1820&compId=IXFH(T)52N50P2.pdf?ci_sign=7c44fe5509f3cb92524e6dfee4e7d8922d30699d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Power dissipation: 960W
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
1+839.03 грн
2+587.10 грн
3+586.31 грн
5+554.57 грн
В кошику  од. на суму  грн.
MMIX1F132N50P3
+1
 		MMIX1F132N50P3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2879.37 грн
10+2570.56 грн
В кошику  од. на суму  грн.
IXTH22N50P IXTH22N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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LCA110 LCA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF03E0C7&compId=LCA110.pdf?ci_sign=c8142c6ee880adf29cd86bcd32b0c988eb9cc4fd Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
3+153.79 грн
9+107.90 грн
24+102.35 грн
50+100.76 грн
250+98.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1125NTR CPC1125NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
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CPC1225N CPC1225N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003A60C7&compId=CPC1225N.pdf?ci_sign=4ce0245a05e1666e017a4e8632ce448230354fc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
4+123.04 грн
10+99.17 грн
11+92.03 грн
28+87.27 грн
100+84.10 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1225NTR CPC1225NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003A60C7&compId=CPC1225N.pdf?ci_sign=4ce0245a05e1666e017a4e8632ce448230354fc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
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IXFK120N20P IXFK120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Case: TO264
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 100ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
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IXTK120N20P IXTK120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 714W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
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MG12150W-XN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: package W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
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MIXG240W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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MIXG240RF1200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Semiconductor structure: diode/transistor
Topology: boost chopper
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Collector current: 250A
Max. off-state voltage: 1.2kV
Case: E2-Pack PFP
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MIXG240W1200PZTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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IXTN30N100L IXTN30N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA762DDC51FD820&compId=IXTN30N100L.pdf?ci_sign=1267cd27b10289fdcc054aa2d6c82d9805b1b00e Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear™
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IXTB30N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916FF820&compId=IXTB30N100L.pdf?ci_sign=733db101b859fd094ce1250c8d84c21345092274 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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IXTA130N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXTA130N10T-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXTA130N10T7 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEF7B5A4BC20D2&compId=IXTA130N10T7.PDF?ci_sign=72380c18aa9ffac0654aa9ca714129b806c8c025 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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DPG80C300HB DPG80C300HB IXYS DPG80C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 215W
Max. forward voltage: 1.36V
Max. forward impulse current: 0.45kA
Load current: 40A x2
Max. off-state voltage: 300V
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
1+546.82 грн
3+364.16 грн
8+344.33 грн
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DPG30C300PB DPG30C300PB IXYS Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
Max. forward voltage: 1.26V
Max. forward impulse current: 0.24kA
Load current: 15A x2
Max. off-state voltage: 300V
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
2+223.86 грн
3+189.62 грн
7+149.95 грн
18+142.02 грн
50+141.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DPG60C300QB DPG60C300QB IXYS Littelfuse-Power-Semiconductors-DPG60C300QB-Datasheet?assetguid=38393FCB-5AF1-4A3C-B2C9-F6797A3D1C35 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO3P
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 160W
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Load current: 30A x2
Max. off-state voltage: 300V
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+459.67 грн
4+279.27 грн
10+264.20 грн
30+253.88 грн
В кошику  од. на суму  грн.
DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Max. forward voltage: 0.97V
Max. forward impulse current: 0.4kA
Load current: 30A x2
Max. off-state voltage: 300V
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+596.38 грн
3+396.69 грн
7+375.27 грн
В кошику  од. на суму  грн.
DPG30C300HB DPG30C300HB IXYS Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 90W
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Load current: 15A x2
Max. off-state voltage: 300V
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
2+329.80 грн
6+157.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MKE38RK600DFELB IXYS MKE38RK600DFELB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhancement
Reverse recovery time: 50ns
Semiconductor structure: diode/transistor
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IXTH120P065T IXTH120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO247-3
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
1+575.87 грн
3+391.14 грн
7+369.72 грн
30+356.23 грн
В кошику  од. на суму  грн.
IXFT140N20X3HV IXFT140N20X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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IXTK22N100L IXTK22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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IXTP32P05T IXTP32P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0CA1113E4F8BF&compId=IXT_32P05T.pdf?ci_sign=db5aa0628442a2ab696c43214df8755287bd452e Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Type of transistor: P-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Kind of channel: enhancement
Power dissipation: 83W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
2+233.25 грн
10+97.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP32P20T IXTP32P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EF0A8A8C018BF&compId=IXT_32P20T.pdf?ci_sign=6bc8fc2e384d370d1b27158e2571e9d58c0bf6c0 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Type of transistor: P-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Kind of channel: enhancement
Power dissipation: 300W
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+624.58 грн
3+429.22 грн
6+405.42 грн
50+403.83 грн
В кошику  од. на суму  грн.
IXTH10P50P IXTH10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
на замовлення 278 шт:
термін постачання 21-30 дні (днів)
1+594.67 грн
3+407.01 грн
7+384.79 грн
30+372.89 грн
В кошику  од. на суму  грн.
IXTA08N100D2 IXTA08N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
2+268.29 грн
8+129.32 грн
20+122.18 грн
100+117.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA30E1200PB CLA30E1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEFEC36F01A38BF&compId=CLA30E1200PB.pdf?ci_sign=d383d2f8fbaa84679fa1f0485503906033c4eae7 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
на замовлення 81 шт:
термін постачання 21-30 дні (днів)
2+313.57 грн
5+234.84 грн
6+158.68 грн
17+149.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA16E1200PN CLA16E1200PN IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3C75C4A8580D2&compId=CLA16E1200PN.pdf?ci_sign=8a652795e55291d724389f9222e6367e0e1a96fa Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 16A
на замовлення 114 шт:
термін постачання 21-30 дні (днів)
2+253.76 грн
8+119.01 грн
22+112.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLF20E1200PB CLF20E1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA9952EC35D40C0C7&compId=CLF20E1200PB.pdf?ci_sign=259617a1c258254612c9ab39e81daa6420058592 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
Max. load current: 31A
на замовлення 62 шт:
термін постачання 21-30 дні (днів)
2+282.81 грн
7+153.12 грн
17+145.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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LAA100P LAA100P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
2+339.20 грн
4+260.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VHFD37-08IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
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VHFD37-12IO1 VHFD37-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6EF41935CA0C4&compId=VHFD37.pdf?ci_sign=6056112efac0b4a16be8fae12f15d363ee05895d Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
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DSI45-16A DSI45-16A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB44881091F0143&compId=DSI45-16A.pdf?ci_sign=0605bc7a5e3664dd208c1e0a4410373628d8b886 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.23V
Power dissipation: 270W
Load current: 45A
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 373 шт:
термін постачання 21-30 дні (днів)
2+290.50 грн
5+221.35 грн
12+209.45 грн
30+207.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MEE250-12DA MEE250-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Case: Y4-M6
Max. forward voltage: 1.54V
Load current: 260A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 2.4kA
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
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DSA20C45PB DSA20C45PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C91FD17A1DB8BF&compId=DSA20C45PB.pdf?ci_sign=7cdcf1c17ba6d046b85f0f92e7ac12b68cfe04db Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Type of diode: Schottky rectifying
Power dissipation: 45W
Mounting: THT
Kind of package: tube
Case: TO220AB
Semiconductor structure: common cathode; double
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.61V
Max. off-state voltage: 45V
Load current: 10A x2
Max. forward impulse current: 260A
на замовлення 362 шт:
термін постачання 21-30 дні (днів)
13+33.32 грн
14+28.64 грн
50+27.13 грн
250+26.74 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DSA20C100PN DSA20C100PN IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C90C74951718BF&compId=DSA20C100PN.pdf?ci_sign=39704861a26cf68ccc6e55d0f47bc62fca68da11 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Type of diode: Schottky rectifying
Power dissipation: 35W
Mounting: THT
Kind of package: tube
Case: TO220FP
Semiconductor structure: common cathode; double
Max. forward voltage: 0.71V
Max. off-state voltage: 100V
Load current: 10A x2
Max. forward impulse current: 0.24kA
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
7+65.79 грн
8+54.74 грн
10+48.40 грн
22+42.84 грн
Мінімальне замовлення: 7
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DSA20C60PN DSA20C60PN IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C940C99465B8BF&compId=DSA20C60PN.pdf?ci_sign=f23f6f12d9e28e2df814647d5f8a3a155d95bfb1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V
Type of diode: Schottky rectifying
Power dissipation: 35W
Mounting: THT
Kind of package: tube
Case: TO220FP
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 10A x2
Max. forward impulse current: 0.24kA
на замовлення 153 шт:
термін постачання 21-30 дні (днів)
6+72.62 грн
7+61.09 грн
10+54.74 грн
20+47.60 грн
55+44.43 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IXFN48N60P IXFN48N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9735B5A4BF820&compId=IXFN48N60P.pdf?ci_sign=3767de0c252b66993db8e840b8859a54ca75ee30 description Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 110A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXFQ28N60P3 IXFQ28N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFR48N60P IXFR48N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC58D820&compId=IXFR48N60P.pdf?ci_sign=ccd3cbc214a931f568a20e2a1944f812c5751f5a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFX48N60P IXFX48N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A94E9FB88C78BF&compId=IXF_48N60P.pdf?ci_sign=2d8decaa7bf5853333c30536e1424c18bf5cd01b Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH1N450HV IXTH1N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC022763C7820&compId=IXTH(T)1N450HV.pdf?ci_sign=1a542cb69701b4bb55549a4f2857e06f4cbbbc22 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+2709.34 грн
10+2487.25 грн
В кошику  од. на суму  грн.
CPC1983YE CPC1983YE IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49385343880C7&compId=CPC1983YE.pdf?ci_sign=974827daa00530c081d8f8338c456dd3b19928d6 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 0.5A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 6Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 4kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
2+368.25 грн
4+276.89 грн
10+261.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA7N100P IXFA7N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
на замовлення 134 шт:
термін постачання 21-30 дні (днів)
1+469.07 грн
4+284.03 грн
5+283.24 грн
10+268.16 грн
В кошику  од. на суму  грн.
IXFK26N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7
IXFK26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Case: TO264
Mounting: THT
Reverse recovery time: 300ns
On-state resistance: 390mΩ
Drain current: 26A
Gate-source voltage: ±30V
Power dissipation: 780W
Drain-source voltage: 1kV
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
товару немає в наявності
В кошику  од. на суму  грн.
FBE22-06N1 pVersion=0046&contRep=ZT&docId=005056AB82531EE987F5933B49D018BF&compId=FBE22-06N1.pdf?ci_sign=7ea1713ca283cb8800d681aa2a8c9d4a27a181dc
FBE22-06N1
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1084.25 грн
2+755.30 грн
4+714.04 грн
25+695.80 грн
В кошику  од. на суму  грн.
IXKC23N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6CB820&compId=IXKC23N60C5.pdf?ci_sign=c1a5b75b3ab726fbed4e498e342a467c0b978d16
IXKC23N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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CPC1302GSTR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA7859A3521EC&compId=CPC1302.pdf?ci_sign=144bfd2503e02a373942f882ef05b0562a26aa60
CPC1302GSTR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 1µs
Turn-off time: 80µs
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 2
Max. off-state voltage: 5V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+201.64 грн
9+111.07 грн
23+105.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MEA75-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MEA75-12DA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Semiconductor structure: common anode
Electrical mounting: screw
Mechanical mounting: screw
Load current: 75A
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
на замовлення 61 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2077.08 грн
2+1823.99 грн
В кошику  од. на суму  грн.
MCB20P1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5
MCB20P1200LB-TUB
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
товару немає в наявності
В кошику  од. на суму  грн.
MCB20P1200LB-TRR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
товару немає в наявності
В кошику  од. на суму  грн.
DSEE55-24N1F Littelfuse-Power-Semiconductors-DSEE55-24N1F-Datasheet?assetguid=bbc3c036-3bc3-4bdd-bdc6-79f0ab7a10f9
DSEE55-24N1F
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 800A; Ufmax: 1.56V
Max. forward voltage: 1.56V
Load current: 60A
Power dissipation: 250W
Max. forward impulse current: 0.8kA
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
Case: ISOPLUS i4-pac™ x024b
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Reverse recovery time: 85ns
товару немає в наявності
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IXTQ22N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073
IXTQ22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+427.21 грн
4+250.71 грн
11+237.22 грн
В кошику  од. на суму  грн.
IXFH22N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC111820&compId=IXFH22N50P.pdf?ci_sign=8586e5293aa35f9bb95f912636881d81bf896a89
IXFH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+443.44 грн
4+306.25 грн
9+289.58 грн
120+278.48 грн
В кошику  од. на суму  грн.
IXFH52N50P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B656662E1820&compId=IXFH(T)52N50P2.pdf?ci_sign=7c44fe5509f3cb92524e6dfee4e7d8922d30699d
IXFH52N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Power dissipation: 960W
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+839.03 грн
2+587.10 грн
3+586.31 грн
5+554.57 грн
В кошику  од. на суму  грн.
MMIX1F132N50P3 littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf
MMIX1F132N50P3
+1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2879.37 грн
10+2570.56 грн
В кошику  од. на суму  грн.
IXTH22N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDA40D50235820&compId=IXTH(Q%2CV)22N50P_S.pdf?ci_sign=ce2412085be3e0bce70371fe953f27e347b1e073
IXTH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
LCA110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF03E0C7&compId=LCA110.pdf?ci_sign=c8142c6ee880adf29cd86bcd32b0c988eb9cc4fd
LCA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+153.79 грн
9+107.90 грн
24+102.35 грн
50+100.76 грн
250+98.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1125NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2
CPC1125NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
товару немає в наявності
В кошику  од. на суму  грн.
CPC1225N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003A60C7&compId=CPC1225N.pdf?ci_sign=4ce0245a05e1666e017a4e8632ce448230354fc0
CPC1225N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+123.04 грн
10+99.17 грн
11+92.03 грн
28+87.27 грн
100+84.10 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1225NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003A60C7&compId=CPC1225N.pdf?ci_sign=4ce0245a05e1666e017a4e8632ce448230354fc0
CPC1225NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
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IXFK120N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee
IXFK120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Case: TO264
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 100ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
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IXTK120N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3
IXTK120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 714W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
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MG12150W-XN2MM littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: package W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
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MIXG240W1200PTEH
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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MIXG240RF1200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Semiconductor structure: diode/transistor
Topology: boost chopper
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Collector current: 250A
Max. off-state voltage: 1.2kV
Case: E2-Pack PFP
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MIXG240W1200PZTEH pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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IXTN30N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA762DDC51FD820&compId=IXTN30N100L.pdf?ci_sign=1267cd27b10289fdcc054aa2d6c82d9805b1b00e
IXTN30N100L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear™
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В кошику  од. на суму  грн.
IXTB30N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916FF820&compId=IXTB30N100L.pdf?ci_sign=733db101b859fd094ce1250c8d84c21345092274
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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IXTA130N10T pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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В кошику  од. на суму  грн.
IXTA130N10T-TRL pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEFB1FFB9060D2&compId=IXTA130N10T.PDF?ci_sign=69dce128b1e5f50f401f8f86e0fd7cb4446cbc18
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXTA130N10T7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8ABEF7B5A4BC20D2&compId=IXTA130N10T7.PDF?ci_sign=72380c18aa9ffac0654aa9ca714129b806c8c025
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
товару немає в наявності
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DPG80C300HB DPG80C300HB.pdf
DPG80C300HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 215W
Max. forward voltage: 1.36V
Max. forward impulse current: 0.45kA
Load current: 40A x2
Max. off-state voltage: 300V
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+546.82 грн
3+364.16 грн
8+344.33 грн
В кошику  од. на суму  грн.
DPG30C300PB Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D
DPG30C300PB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
Max. forward voltage: 1.26V
Max. forward impulse current: 0.24kA
Load current: 15A x2
Max. off-state voltage: 300V
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+223.86 грн
3+189.62 грн
7+149.95 грн
18+142.02 грн
50+141.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DPG60C300QB Littelfuse-Power-Semiconductors-DPG60C300QB-Datasheet?assetguid=38393FCB-5AF1-4A3C-B2C9-F6797A3D1C35
DPG60C300QB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO3P
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 160W
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Load current: 30A x2
Max. off-state voltage: 300V
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+459.67 грн
4+279.27 грн
10+264.20 грн
30+253.88 грн
В кошику  од. на суму  грн.
DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Max. forward voltage: 0.97V
Max. forward impulse current: 0.4kA
Load current: 30A x2
Max. off-state voltage: 300V
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+596.38 грн
3+396.69 грн
7+375.27 грн
В кошику  од. на суму  грн.
DPG30C300HB Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5
DPG30C300HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 35ns
Power dissipation: 90W
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Load current: 15A x2
Max. off-state voltage: 300V
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+329.80 грн
6+157.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MKE38RK600DFELB MKE38RK600DFELB.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhancement
Reverse recovery time: 50ns
Semiconductor structure: diode/transistor
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IXTH120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTH120P065T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO247-3
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+575.87 грн
3+391.14 грн
7+369.72 грн
30+356.23 грн
В кошику  од. на суму  грн.
IXFT140N20X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFT140N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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IXTK22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8
IXTK22N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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IXTP32P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0CA1113E4F8BF&compId=IXT_32P05T.pdf?ci_sign=db5aa0628442a2ab696c43214df8755287bd452e
IXTP32P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Type of transistor: P-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Kind of channel: enhancement
Power dissipation: 83W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+233.25 грн
10+97.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP32P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EF0A8A8C018BF&compId=IXT_32P20T.pdf?ci_sign=6bc8fc2e384d370d1b27158e2571e9d58c0bf6c0
IXTP32P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Type of transistor: P-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Kind of channel: enhancement
Power dissipation: 300W
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+624.58 грн
3+429.22 грн
6+405.42 грн
50+403.83 грн
В кошику  од. на суму  грн.
IXTH10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTH10P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
на замовлення 278 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+594.67 грн
3+407.01 грн
7+384.79 грн
30+372.89 грн
В кошику  од. на суму  грн.
IXTA08N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47
IXTA08N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+268.29 грн
8+129.32 грн
20+122.18 грн
100+117.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA30E1200PB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEFEC36F01A38BF&compId=CLA30E1200PB.pdf?ci_sign=d383d2f8fbaa84679fa1f0485503906033c4eae7
CLA30E1200PB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
на замовлення 81 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+313.57 грн
5+234.84 грн
6+158.68 грн
17+149.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA16E1200PN pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3C75C4A8580D2&compId=CLA16E1200PN.pdf?ci_sign=8a652795e55291d724389f9222e6367e0e1a96fa
CLA16E1200PN
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 16A
на замовлення 114 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+253.76 грн
8+119.01 грн
22+112.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLF20E1200PB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA9952EC35D40C0C7&compId=CLF20E1200PB.pdf?ci_sign=259617a1c258254612c9ab39e81daa6420058592
CLF20E1200PB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
Max. load current: 31A
на замовлення 62 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+282.81 грн
7+153.12 грн
17+145.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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LAA100P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+339.20 грн
4+260.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VHFD37-08IO1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
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VHFD37-12IO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6EF41935CA0C4&compId=VHFD37.pdf?ci_sign=6056112efac0b4a16be8fae12f15d363ee05895d
VHFD37-12IO1
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
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DSI45-16A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB44881091F0143&compId=DSI45-16A.pdf?ci_sign=0605bc7a5e3664dd208c1e0a4410373628d8b886
DSI45-16A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.23V
Power dissipation: 270W
Load current: 45A
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 373 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+290.50 грн
5+221.35 грн
12+209.45 грн
30+207.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MEE250-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MEE250-12DA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Case: Y4-M6
Max. forward voltage: 1.54V
Load current: 260A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 2.4kA
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
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DSA20C45PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C91FD17A1DB8BF&compId=DSA20C45PB.pdf?ci_sign=7cdcf1c17ba6d046b85f0f92e7ac12b68cfe04db
DSA20C45PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Type of diode: Schottky rectifying
Power dissipation: 45W
Mounting: THT
Kind of package: tube
Case: TO220AB
Semiconductor structure: common cathode; double
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.61V
Max. off-state voltage: 45V
Load current: 10A x2
Max. forward impulse current: 260A
на замовлення 362 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.32 грн
14+28.64 грн
50+27.13 грн
250+26.74 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DSA20C100PN pVersion=0046&contRep=ZT&docId=005056AB82531EE991C90C74951718BF&compId=DSA20C100PN.pdf?ci_sign=39704861a26cf68ccc6e55d0f47bc62fca68da11
DSA20C100PN
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Type of diode: Schottky rectifying
Power dissipation: 35W
Mounting: THT
Kind of package: tube
Case: TO220FP
Semiconductor structure: common cathode; double
Max. forward voltage: 0.71V
Max. off-state voltage: 100V
Load current: 10A x2
Max. forward impulse current: 0.24kA
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.79 грн
8+54.74 грн
10+48.40 грн
22+42.84 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DSA20C60PN pVersion=0046&contRep=ZT&docId=005056AB82531EE991C940C99465B8BF&compId=DSA20C60PN.pdf?ci_sign=f23f6f12d9e28e2df814647d5f8a3a155d95bfb1
DSA20C60PN
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V
Type of diode: Schottky rectifying
Power dissipation: 35W
Mounting: THT
Kind of package: tube
Case: TO220FP
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 10A x2
Max. forward impulse current: 0.24kA
на замовлення 153 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+72.62 грн
7+61.09 грн
10+54.74 грн
20+47.60 грн
55+44.43 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IXFN48N60P description pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9735B5A4BF820&compId=IXFN48N60P.pdf?ci_sign=3767de0c252b66993db8e840b8859a54ca75ee30
IXFN48N60P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 110A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
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IXFQ28N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c
IXFQ28N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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IXFR48N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC58D820&compId=IXFR48N60P.pdf?ci_sign=ccd3cbc214a931f568a20e2a1944f812c5751f5a
IXFR48N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXFX48N60P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A94E9FB88C78BF&compId=IXF_48N60P.pdf?ci_sign=2d8decaa7bf5853333c30536e1424c18bf5cd01b
IXFX48N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXTH1N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC022763C7820&compId=IXTH(T)1N450HV.pdf?ci_sign=1a542cb69701b4bb55549a4f2857e06f4cbbbc22
IXTH1N450HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2709.34 грн
10+2487.25 грн
В кошику  од. на суму  грн.
CPC1983YE pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49385343880C7&compId=CPC1983YE.pdf?ci_sign=974827daa00530c081d8f8338c456dd3b19928d6
CPC1983YE
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 0.5A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 6Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 4kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+368.25 грн
4+276.89 грн
10+261.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA7N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181
IXFA7N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
на замовлення 134 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+469.07 грн
4+284.03 грн
5+283.24 грн
10+268.16 грн
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