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PAA110STR IXYS PAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA127STR IXYS LAA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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PLA140STR IXYS PLA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
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LCA717STR IXYS LCA717.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.15Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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MEE300-06DA IXYS PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
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MCMA700PD1600CB IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk
Type of module: diode-thyristor
Case: ComPack
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.11V
Load current: 700A
Semiconductor structure: double series
Max. forward impulse current: 19kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA150PD2200YB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 235A
Max. forward voltage: 1.18V
Load current: 150A
Semiconductor structure: double series
Max. forward impulse current: 4.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA650PD2200CB IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 650A; ComPack; Ufmax: 1.16V; bulk
Type of module: diode-thyristor
Case: ComPack
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.16V
Load current: 650A
Semiconductor structure: double series
Max. forward impulse current: 16kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA95PD2200TB IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 149A
Max. forward voltage: 1.24V
Load current: 95A
Semiconductor structure: double series
Max. forward impulse current: 1.7kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA120PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 190A
Max. forward voltage: 1.34V
Load current: 120A
Semiconductor structure: double series
Max. forward impulse current: 2.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA40PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 63A
Max. forward voltage: 1.29V
Load current: 40A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA55PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 86A
Max. forward voltage: 1.2V
Load current: 55A
Semiconductor structure: double series
Max. forward impulse current: 1kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA75PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Case: TO240AA
Kind of package: bulk
Max. load current: 118A
Max. forward voltage: 1.21V
Load current: 75A
Semiconductor structure: double series
Max. forward impulse current: 1.4kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 2.2kV
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MCNA220PD2200YB IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 345A
Max. forward voltage: 1.19V
Load current: 220A
Semiconductor structure: double series
Max. forward impulse current: 7.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA260PD1800YB IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA35PD1200TB IXYS MCMA35PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 55A
Max. forward voltage: 1.22V
Load current: 35A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA180PD2200YB IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 280A
Max. forward voltage: 1.18V
Load current: 180A
Semiconductor structure: double series
Max. forward impulse current: 5.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA50PD1200TB IXYS MCMA50PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.89V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 79A
Max. forward voltage: 1.17V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 0.8kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA65PD1600TB IXYS MCMA65PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 105A
Max. forward voltage: 1.17V
Load current: 65A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA110PD1600TB IXYS MCMA110PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA25PD1200TB IXYS MCMA25PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.25V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Max. forward impulse current: 0.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.87V
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MCMA50PD1600TB IXYS MCMA50PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.89V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 79A
Max. forward voltage: 1.17V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 0.8kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA65PD1200TB IXYS MCMA65PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 105A
Max. forward voltage: 1.17V
Load current: 65A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA85PD1200TB IXYS MCMA85PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA85PD1600TB IXYS MCMA85PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA110PD1200TB IXYS MCMA110PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA25PD1600TB IXYS MCMA25PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Max. forward voltage: 1.25V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Max. forward impulse current: 0.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.87V
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MCMA260PD1600YB IXYS MCMA260PD1600YB.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.81V
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCC56-16io8B MCC56-16io8B IXYS L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Kind of package: bulk
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.6kV
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MCD56-16io8B IXYS PCN210930_TO240 screw.pdf MCD56-16io8B.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Max. load current: 100A
Max. forward voltage: 1.24V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. off-state voltage: 1.6kV
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MCD56-16IO1B IXYS PCN210915_TO240 screw.pdf MCD56-16IO1B.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Max. load current: 100A
Max. forward voltage: 1.24V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Max. off-state voltage: 1.6kV
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DSB20C60PN DSB20C60PN IXYS DSB20C60PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.24kA
Power dissipation: 30W
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Case: TO220FP
на замовлення 419 шт:
термін постачання 21-30 дні (днів)
5+77.74 грн
10+69.52 грн
15+62.04 грн
40+58.30 грн
250+57.56 грн
Мінімальне замовлення: 5
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IXTH8P50 IXTH8P50 IXYS IXT_8P50.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO247-3; 400ns
Mounting: THT
Drain-source voltage: -500V
Drain current: -8A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 180W
Polarisation: unipolar
Kind of package: tube
Gate charge: 130nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO247-3
Reverse recovery time: 400ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
1+634.34 грн
3+432.80 грн
6+409.63 грн
120+395.43 грн
В кошику  од. на суму  грн.
IXTT8P50 IXTT8P50 IXYS IXT_8P50.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO268; 400ns
Mounting: SMD
Drain-source voltage: -500V
Drain current: -8A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 180W
Polarisation: unipolar
Kind of package: tube
Gate charge: 130nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 400ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+606.97 грн
2+449.25 грн
6+424.58 грн
30+417.85 грн
В кошику  од. на суму  грн.
VUO52-16NO1 VUO52-16NO1 IXYS VUO52-16NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+2072.07 грн
2+1819.42 грн
В кошику  од. на суму  грн.
DSEP29-06A DSEP29-06A IXYS DSEP29-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220AC
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
на замовлення 93 шт:
термін постачання 21-30 дні (днів)
2+272.09 грн
6+177.90 грн
14+167.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEP29-12A DSEP29-12A IXYS DSEP29-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
2+286.58 грн
5+186.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEP29-06B DSEP29-06B IXYS Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220AC
Max. forward voltage: 2.52V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
2+259.21 грн
6+163.70 грн
15+154.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEP29-06AS-TUB IXYS DSEP29-06AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
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DSEI2x61-12P DSEI2x61-12P IXYS Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; ECO-PAC 1
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 52A x2
Case: ECO-PAC 1
Max. forward voltage: 2.15V
Max. forward impulse current: 0.45kA
Electrical mounting: THT
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1392.65 грн
2+1222.91 грн
10+1214.69 грн
В кошику  од. на суму  грн.
DSEI2x61-06P DSEI2x61-06P IXYS Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: ECO-PAC 1
Max. forward voltage: 1.5V
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Mechanical mounting: screw
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+1329.86 грн
2+1167.60 грн
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MMIX1F360N15T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f360n15t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 235A
Pulsed drain current: 900A
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 715nC
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXYN30N170CV1 IXYN30N170CV1 IXYS IXYN30N170CV1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 30A; SOT227B
Technology: XPT™
Power dissipation: 680W
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 275A
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IXTP8N70X2M IXTP8N70X2M IXYS IXTP8N70X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
на замовлення 301 шт:
термін постачання 21-30 дні (днів)
3+153.98 грн
7+138.29 грн
10+137.54 грн
18+130.06 грн
50+129.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP8N70X2 IXTP8N70X2 IXYS IXTA(P,U,Y)8N70X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO220AB; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
2+237.48 грн
3+198.84 грн
6+158.47 грн
16+149.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTU8N70X2 IXTU8N70X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; Idm: 16A; 150W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 150W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
2+217.35 грн
5+180.90 грн
7+144.27 грн
17+136.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA8N70X2 IXTA8N70X2 IXYS IXTA(P,U,Y)8N70X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
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IXTY8N70X2 IXTY8N70X2 IXYS IXTA(P,U,Y)8N70X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO252; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO252
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
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DSEI120-12A DSEI120-12A IXYS dsei120-12a.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 109A
Case: TO247-2
Mounting: THT
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Kind of package: tube
Semiconductor structure: single diode
Reverse recovery time: 40ns
Power dissipation: 357W
Features of semiconductor devices: fast switching
Technology: FRED
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
1+911.26 грн
2+719.84 грн
4+680.22 грн
30+670.51 грн
120+658.55 грн
В кошику  од. на суму  грн.
DSEI120-12AZ-TUB DSEI120-12AZ-TUB IXYS DSEI120-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 109A
Case: TO268AAHV
Mounting: SMD
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Kind of package: tube
Semiconductor structure: single diode
Reverse recovery time: 40ns
Power dissipation: 357W
Features of semiconductor devices: fast switching
Technology: FRED
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1085.94 грн
2+723.58 грн
4+684.71 грн
В кошику  од. на суму  грн.
IXTT170N10P IXTT170N10P IXYS IXTK170N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Case: TO268
Reverse recovery time: 120ns
Drain-source voltage: 100V
Drain current: 170A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 715W
Polarisation: unipolar
Kind of package: tube
Gate charge: 198nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
1+863.76 грн
2+577.07 грн
5+545.68 грн
В кошику  од. на суму  грн.
IXFT170N25X3HV IXFT170N25X3HV IXYS IXFH(K,T)170N25X3_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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CPC1916Y CPC1916Y IXYS CPC1916.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Operating temperature: -40...85°C
On-state resistance: 0.34Ω
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 2.5A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Case: SIP4
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
1+772.80 грн
3+332.64 грн
8+314.70 грн
В кошику  од. на суму  грн.
PLA134S PLA134S IXYS PLA134.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Case: DIP6
On-state resistance: 3Ω
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 350mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
1+1488.44 грн
2+662.28 грн
4+625.66 грн
В кошику  од. на суму  грн.
LAA108 LAA108 IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
On-state resistance: 8Ω
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 300mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x3.3mm
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
3+198.03 грн
8+122.59 грн
20+115.86 грн
Мінімальне замовлення: 3
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LAA108P LAA108P IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
On-state resistance: 8Ω
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 300mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
на замовлення 130 шт:
термін постачання 21-30 дні (днів)
2+202.06 грн
8+122.59 грн
20+115.86 грн
Мінімальне замовлення: 2
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VMM650-01F IXYS VMM650-01F.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 500A; Y3-Li; HiPerFET™; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 500A
Case: Y3-Li
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
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MCD250-14io1 IXYS L086.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Case: W102
Max. off-state voltage: 1.4kV
Max. load current: 450A
Max. forward voltage: 1.36V
Load current: 287A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
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MCD250-16io1 IXYS L086.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Case: W102
Max. off-state voltage: 1.6kV
Max. load current: 450A
Max. forward voltage: 1.36V
Load current: 287A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
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MCD250-08io1 IXYS MCC,MCD_250.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA
Case: W102
Max. off-state voltage: 0.8kV
Max. load current: 450A
Max. forward voltage: 1.36V
Load current: 287A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
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PAA110STR PAA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA127STR LAA127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
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PLA140STR PLA140.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
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LCA717STR LCA717.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.15Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
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MEE300-06DA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
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MCMA700PD1600CB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk
Type of module: diode-thyristor
Case: ComPack
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.11V
Load current: 700A
Semiconductor structure: double series
Max. forward impulse current: 19kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA150PD2200YB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 235A
Max. forward voltage: 1.18V
Load current: 150A
Semiconductor structure: double series
Max. forward impulse current: 4.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA650PD2200CB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 650A; ComPack; Ufmax: 1.16V; bulk
Type of module: diode-thyristor
Case: ComPack
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.16V
Load current: 650A
Semiconductor structure: double series
Max. forward impulse current: 16kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA95PD2200TB PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 149A
Max. forward voltage: 1.24V
Load current: 95A
Semiconductor structure: double series
Max. forward impulse current: 1.7kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA120PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 190A
Max. forward voltage: 1.34V
Load current: 120A
Semiconductor structure: double series
Max. forward impulse current: 2.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA40PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 63A
Max. forward voltage: 1.29V
Load current: 40A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA55PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 86A
Max. forward voltage: 1.2V
Load current: 55A
Semiconductor structure: double series
Max. forward impulse current: 1kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA75PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Case: TO240AA
Kind of package: bulk
Max. load current: 118A
Max. forward voltage: 1.21V
Load current: 75A
Semiconductor structure: double series
Max. forward impulse current: 1.4kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 2.2kV
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MCNA220PD2200YB PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 345A
Max. forward voltage: 1.19V
Load current: 220A
Semiconductor structure: double series
Max. forward impulse current: 7.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA260PD1800YB PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA35PD1200TB MCMA35PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 55A
Max. forward voltage: 1.22V
Load current: 35A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA180PD2200YB PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 280A
Max. forward voltage: 1.18V
Load current: 180A
Semiconductor structure: double series
Max. forward impulse current: 5.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA50PD1200TB MCMA50PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.89V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 79A
Max. forward voltage: 1.17V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 0.8kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA65PD1600TB MCMA65PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 105A
Max. forward voltage: 1.17V
Load current: 65A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA110PD1600TB MCMA110PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA25PD1200TB MCMA25PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.25V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Max. forward impulse current: 0.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.87V
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MCMA50PD1600TB MCMA50PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.89V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 79A
Max. forward voltage: 1.17V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 0.8kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA65PD1200TB MCMA65PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 105A
Max. forward voltage: 1.17V
Load current: 65A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA85PD1200TB MCMA85PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA85PD1600TB MCMA85PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA110PD1200TB MCMA110PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCMA25PD1600TB MCMA25PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Max. forward voltage: 1.25V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Max. forward impulse current: 0.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.87V
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MCMA260PD1600YB MCMA260PD1600YB.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.81V
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCC56-16io8B L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC56-16io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Kind of package: bulk
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.6kV
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MCD56-16io8B PCN210930_TO240 screw.pdf MCD56-16io8B.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Max. load current: 100A
Max. forward voltage: 1.24V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. off-state voltage: 1.6kV
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MCD56-16IO1B PCN210915_TO240 screw.pdf MCD56-16IO1B.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Max. load current: 100A
Max. forward voltage: 1.24V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Max. off-state voltage: 1.6kV
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DSB20C60PN DSB20C60PN.pdf
DSB20C60PN
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.24kA
Power dissipation: 30W
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Case: TO220FP
на замовлення 419 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+77.74 грн
10+69.52 грн
15+62.04 грн
40+58.30 грн
250+57.56 грн
Мінімальне замовлення: 5
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IXTH8P50 IXT_8P50.pdf
IXTH8P50
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO247-3; 400ns
Mounting: THT
Drain-source voltage: -500V
Drain current: -8A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 180W
Polarisation: unipolar
Kind of package: tube
Gate charge: 130nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO247-3
Reverse recovery time: 400ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+634.34 грн
3+432.80 грн
6+409.63 грн
120+395.43 грн
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IXTT8P50 IXT_8P50.pdf
IXTT8P50
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO268; 400ns
Mounting: SMD
Drain-source voltage: -500V
Drain current: -8A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 180W
Polarisation: unipolar
Kind of package: tube
Gate charge: 130nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 400ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+606.97 грн
2+449.25 грн
6+424.58 грн
30+417.85 грн
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VUO52-16NO1 VUO52-16NO1.pdf
VUO52-16NO1
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2072.07 грн
2+1819.42 грн
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DSEP29-06A DSEP29-06A.pdf
DSEP29-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220AC
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
на замовлення 93 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+272.09 грн
6+177.90 грн
14+167.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEP29-12A DSEP29-12A.pdf
DSEP29-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+286.58 грн
5+186.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEP29-06B Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920
DSEP29-06B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220AC
Max. forward voltage: 2.52V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+259.21 грн
6+163.70 грн
15+154.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEP29-06AS-TUB DSEP29-06AS.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
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DSEI2x61-12P
DSEI2x61-12P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; ECO-PAC 1
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 52A x2
Case: ECO-PAC 1
Max. forward voltage: 2.15V
Max. forward impulse current: 0.45kA
Electrical mounting: THT
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1392.65 грн
2+1222.91 грн
10+1214.69 грн
В кошику  од. на суму  грн.
DSEI2x61-06P
DSEI2x61-06P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: ECO-PAC 1
Max. forward voltage: 1.5V
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Mechanical mounting: screw
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1329.86 грн
2+1167.60 грн
В кошику  од. на суму  грн.
MMIX1F360N15T2 littelfuse_discrete_mosfets_smpd_packages_mmix1f360n15t2_datasheet.pdf.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 235A
Pulsed drain current: 900A
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 715nC
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXYN30N170CV1 IXYN30N170CV1.pdf
IXYN30N170CV1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 30A; SOT227B
Technology: XPT™
Power dissipation: 680W
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 275A
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IXTP8N70X2M IXTP8N70X2M.pdf
IXTP8N70X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
на замовлення 301 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+153.98 грн
7+138.29 грн
10+137.54 грн
18+130.06 грн
50+129.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP8N70X2 IXTA(P,U,Y)8N70X2.pdf
IXTP8N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO220AB; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+237.48 грн
3+198.84 грн
6+158.47 грн
16+149.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTU8N70X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTU8N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; Idm: 16A; 150W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 150W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+217.35 грн
5+180.90 грн
7+144.27 грн
17+136.04 грн
Мінімальне замовлення: 2
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IXTA8N70X2 IXTA(P,U,Y)8N70X2.pdf
IXTA8N70X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
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IXTY8N70X2 IXTA(P,U,Y)8N70X2.pdf
IXTY8N70X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO252; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO252
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
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DSEI120-12A description dsei120-12a.pdf
DSEI120-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 109A
Case: TO247-2
Mounting: THT
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Kind of package: tube
Semiconductor structure: single diode
Reverse recovery time: 40ns
Power dissipation: 357W
Features of semiconductor devices: fast switching
Technology: FRED
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+911.26 грн
2+719.84 грн
4+680.22 грн
30+670.51 грн
120+658.55 грн
В кошику  од. на суму  грн.
DSEI120-12AZ-TUB DSEI120-12AZ.pdf
DSEI120-12AZ-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 109A
Case: TO268AAHV
Mounting: SMD
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Kind of package: tube
Semiconductor structure: single diode
Reverse recovery time: 40ns
Power dissipation: 357W
Features of semiconductor devices: fast switching
Technology: FRED
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1085.94 грн
2+723.58 грн
4+684.71 грн
В кошику  од. на суму  грн.
IXTT170N10P IXTK170N10P-DTE.pdf
IXTT170N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Case: TO268
Reverse recovery time: 120ns
Drain-source voltage: 100V
Drain current: 170A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 715W
Polarisation: unipolar
Kind of package: tube
Gate charge: 198nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+863.76 грн
2+577.07 грн
5+545.68 грн
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IXFT170N25X3HV IXFH(K,T)170N25X3_HV.pdf
IXFT170N25X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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CPC1916Y CPC1916.pdf
CPC1916Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Operating temperature: -40...85°C
On-state resistance: 0.34Ω
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 2.5A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Case: SIP4
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+772.80 грн
3+332.64 грн
8+314.70 грн
В кошику  од. на суму  грн.
PLA134S PLA134.pdf
PLA134S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Case: DIP6
On-state resistance: 3Ω
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 350mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1488.44 грн
2+662.28 грн
4+625.66 грн
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LAA108 LAA108.pdf
LAA108
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
On-state resistance: 8Ω
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 300mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x3.3mm
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+198.03 грн
8+122.59 грн
20+115.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LAA108P LAA108.pdf
LAA108P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
On-state resistance: 8Ω
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 300mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
на замовлення 130 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+202.06 грн
8+122.59 грн
20+115.86 грн
Мінімальне замовлення: 2
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VMM650-01F VMM650-01F.pdf
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 500A; Y3-Li; HiPerFET™; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 500A
Case: Y3-Li
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
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MCD250-14io1 L086.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Case: W102
Max. off-state voltage: 1.4kV
Max. load current: 450A
Max. forward voltage: 1.36V
Load current: 287A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
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MCD250-16io1 L086.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Case: W102
Max. off-state voltage: 1.6kV
Max. load current: 450A
Max. forward voltage: 1.36V
Load current: 287A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
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MCD250-08io1 MCC,MCD_250.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA
Case: W102
Max. off-state voltage: 0.8kV
Max. load current: 450A
Max. forward voltage: 1.36V
Load current: 287A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
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