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IXFK170N10P IXFK170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA4D451E02B38BF&compId=IXFH170N10P_IXFK170N10P.pdf?ci_sign=8e0c57b7145cd2d707e91251170b8da9af42fcd8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Kind of package: tube
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
1+1006.50 грн
2+696.59 грн
4+658.51 грн
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IXFB170N30P IXFB170N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED466DF8CDA6A18&compId=IXFB170N30P.pdf?ci_sign=d2e1603ab2b4ff6c3b3926b7ca4a5bff751cbdb1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+1279.05 грн
3+1122.64 грн
В кошику  од. на суму  грн.
VUE22-12NO7 VUE22-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8896073AAE39C0C4&compId=VUE22-12NO7.pdf?ci_sign=26b20417a95d7d39b4b37d92c0b157bd49d6c9ae Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 24A; Ifsm: 40A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 24A
Max. forward impulse current: 40A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.92V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+1246.59 грн
3+1094.07 грн
В кошику  од. на суму  грн.
VUE22-06NO7 VUE22-06NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88960436DB59E0C4&compId=VUE22-06NO7.pdf?ci_sign=d488fd843cac84f64e5b7f9061a3e09fabaf9d12 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.09V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1197.03 грн
В кошику  од. на суму  грн.
CPC1998J CPC1998J IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FBBAE5D5078BF&compId=cpc1998.pdf?ci_sign=3f6932fbe3787e2750388d95ee237511f744fc66 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 5A
Body dimensions: 20.88x19.91x5.03mm
Control current max.: 150mA
Switched voltage: max. 240V AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: i4-pac
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+721.12 грн
2+581.55 грн
5+549.81 грн
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IXGP12N120A3 IXGP12N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
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IXGH12N120A3 IXGH12N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
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IXTT75N10L2 IXTT75N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993960D1A4DD498BF&compId=IXT_75N10L2.pdf?ci_sign=14d46f1640fe8dff3fd9c2e86627011d0edde846 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1032.13 грн
В кошику  од. на суму  грн.
CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06C1A1D9BB8BF&compId=CLA50E1200TC.pdf?ci_sign=b629e30eda934e1f86d73525caad02b28cb70d3d Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
1+613.47 грн
3+418.91 грн
7+395.90 грн
В кошику  од. на суму  грн.
CLA50E1200TC-TRL IXYS Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
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CPC1150NTR CPC1150NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20F80C7&compId=CPC1150N.pdf?ci_sign=6c33409f6d640e230d2ef27a0b63d7a2c895247e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
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IXFT150N30X3HV IXFT150N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD908A9A238BF&compId=IXF_150N30X3_HV.pdf?ci_sign=c02cea29174068e52cd342ee0467b4c4f54d34e5 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 167ns
Technology: HiPerFET™; X3-Class
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1368.77 грн
3+1201.18 грн
10+1155.16 грн
В кошику  од. на суму  грн.
IXFT150N20T IXFT150N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CE0509EDC31820&compId=IXFH(T)150N20T.pdf?ci_sign=1eb8849a53fa359ec9a3208d53f9c1a524823d86 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXFT150N17T2 IXFT150N17T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC653820&compId=IXFT150N17T2.pdf?ci_sign=f262fe46c60fa0aac8b4fe8177f56a21a91be14c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Case: TO268
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 233nC
On-state resistance: 12mΩ
Drain current: 150A
Drain-source voltage: 175V
Power dissipation: 880W
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IXFT150N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0B9820&compId=IXFH150N25X3.pdf?ci_sign=9b6304dddbd0134b0ebf2cbe9b1dfd52edbdaa17 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Case: TO268HV
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 154nC
Reverse recovery time: 140ns
On-state resistance: 9mΩ
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Pulsed drain current: 300A
Power dissipation: 735W
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CPC1135NTR CPC1135NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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IXFH170N15X3 IXYS media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFQ170N15X3 IXYS media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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PM1206 PM1206 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
1+638.25 грн
3+337.19 грн
8+318.94 грн
В кошику  од. на суму  грн.
PM1204S PM1204S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
1+569.04 грн
4+300.69 грн
9+284.03 грн
В кошику  од. на суму  грн.
LCA210S LCA210S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461978040C7&compId=LCA210.pdf?ci_sign=d260a6d8e34592bbe91146cca268c12b869912e4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Operating temperature: -40...85°C
Contacts configuration: SPDT
Type of relay: solid state
Relay variant: 1-phase; current source
Turn-on time: 3ms
Turn-off time: 3ms
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Max. operating current: 85mA
Control current max.: 100mA
Case: DIP8
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 93 шт:
термін постачання 21-30 дні (днів)
2+410.12 грн
5+216.59 грн
12+205.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXXN200N60B3 IXXN200N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3094154329820&compId=IXXN200N60B3.pdf?ci_sign=ef812292331fc8d824cb7af5b362bedf7a3cb9e9 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 940W
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IXXN200N60B3H1 IXXN200N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F320D551551820&compId=IXXN200N60B3H1.pdf?ci_sign=f9a69497086ce9ecb9383c5818b60c7cdfb93b64 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 780W
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IXFH44N50P IXFH44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
1+909.09 грн
2+590.28 грн
5+557.75 грн
30+543.47 грн
120+536.33 грн
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IXFA26N50P3 IXFA26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
4+134.14 грн
Мінімальне замовлення: 4
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MMIX1F160N30T MMIX1F160N30T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f160n30t_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Mounting: SMD
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Gate charge: 367nC
Reverse recovery time: 200ns
On-state resistance: 20mΩ
Kind of channel: enhancement
Case: SMPD
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Type of transistor: N-MOSFET
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2687.12 грн
10+2399.19 грн
В кошику  од. на суму  грн.
IXFH40N50Q IXFH40N50Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F63820&compId=IXFH40N50Q.pdf?ci_sign=3f4d61ef909d6e752c1d54406498f3c6045e4fe5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+1138.93 грн
3+999.66 грн
В кошику  од. на суму  грн.
IXTH40N50L2 IXTH40N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 IXTQ40N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 IXTT40N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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PM1206S PM1206S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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PM1206STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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В кошику  од. на суму  грн.
IXFP18N65X2 IXFP18N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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В кошику  од. на суму  грн.
IXFP18N65X2M IXFP18N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D394767F98BF&compId=IXFP18N65X2M.pdf?ci_sign=8bb4700710f80bf16b6ec7153d238ece41bb708b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFA18N65X2 IXFA18N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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В кошику  од. на суму  грн.
IXFH18N65X2 IXFH18N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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VBE17-06NO7 VBE17-06NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB95AF8C9A00C4&compId=VBE17-06NO7.pdf?ci_sign=a8393222091d5a54bd260b4883ffeacf5c883410 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 27A; Ifsm: 45A; THT
Case: ECO-PAC 1
Electrical mounting: THT
Technology: FRED
Mechanical mounting: screw
Type of bridge rectifier: single-phase
Max. forward impulse current: 45A
Load current: 27A
Max. off-state voltage: 0.6kV
Version: module
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+1079.12 грн
2+803.70 грн
4+760.06 грн
В кошику  од. на суму  грн.
IXFN160N30T IXFN160N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF90EF782821820&compId=IXFN160N30T.pdf?ci_sign=4f514305338d34fe8741e1d339673060b3d7fe0d Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Technology: GigaMOS™
Polarisation: unipolar
Gate charge: 376nC
Reverse recovery time: 200ns
On-state resistance: 19mΩ
Kind of channel: enhancement
Case: SOT227B
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Gate-source voltage: ±30V
Drain-source voltage: 300V
Type of semiconductor module: MOSFET transistor
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IXFK160N30T IXFK160N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CE9C427165138BF&compId=IXF_160N30T.pdf?ci_sign=23e001151aa4a4de2e7e32da29e7d4519594f256 Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Mounting: THT
Technology: GigaMOS™
Polarisation: unipolar
Gate charge: 376nC
Reverse recovery time: 200ns
On-state resistance: 19mΩ
Kind of channel: enhancement
Case: TO264
Drain current: 160A
Power dissipation: 1390W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Kind of package: tube
Type of transistor: N-MOSFET
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IXFX160N30T IXFX160N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CE9C427165138BF&compId=IXF_160N30T.pdf?ci_sign=23e001151aa4a4de2e7e32da29e7d4519594f256 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 376nC
On-state resistance: 19mΩ
Kind of channel: enhancement
Case: PLUS247™
Drain current: 160A
Power dissipation: 1390W
Drain-source voltage: 300V
Kind of package: tube
Type of transistor: N-MOSFET
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В кошику  од. на суму  грн.
DSA1-18D DSA1-18D IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 325 шт:
термін постачання 21-30 дні (днів)
2+369.11 грн
4+241.98 грн
10+236.43 грн
11+228.49 грн
100+222.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MEE300-06DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Max. forward impulse current: 2.4kA
Semiconductor structure: double series
Max. off-state voltage: 0.6kV
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.19V
Load current: 304A
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DSP25-16A DSP25-16A IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: TO247-3
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+427.21 грн
В кошику  од. на суму  грн.
DSP25-12A DSP25-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEC87D9A344143&compId=DSP25-12A.pdf?ci_sign=9b32012fa217f3b41cdd73f28c4975da5fe89caa Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 1.16V
Power dissipation: 160W
Load current: 25A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Semiconductor structure: double series
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
2+334.08 грн
4+266.58 грн
10+252.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSP25-16AR DSP25-16AR IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 28A x2
Semiconductor structure: double series
Case: ISOPLUS247™
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Power dissipation: 100W
Kind of package: tube
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+705.74 грн
2+540.29 грн
5+510.94 грн
10+506.97 грн
В кошику  од. на суму  грн.
DSP25-16AT-TUB DSP25-16AT-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC498C99CFDA0C4&compId=DSP25-16AT.pdf?ci_sign=0b5fa43321000384158f4db8f203a913258a48d6 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Max. forward voltage: 1.16V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
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VHF25-12IO7 VHF25-12IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1944179591820&compId=VHF25-ser.pdf?ci_sign=b45349266645b088e679b0569fcbdcd6528c9f31 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Version: module
Mechanical mounting: screw
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Electrical mounting: THT
Gate current: 25/50mA
Load current: 32A
Max. forward impulse current: 180A
Max. off-state voltage: 1.2kV
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1241.46 грн
2+918.74 грн
3+868.75 грн
25+851.30 грн
В кошику  од. на суму  грн.
IXDD604SI IXDD604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
2+223.86 грн
7+152.33 грн
10+151.54 грн
17+143.60 грн
25+142.81 грн
50+138.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDI604PI IXDI604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 1010 шт:
термін постачання 21-30 дні (днів)
4+130.72 грн
10+88.86 грн
12+83.31 грн
31+78.54 грн
100+75.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTN22N100L IXTN22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA743238E52B820&compId=IXTN22N100L.pdf?ci_sign=bd0f90a435af556a9c7a240091db1d3ed3d343fd Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.6Ω
Gate charge: 0.27µC
Kind of channel: enhancement
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 1µs
Technology: Linear™
Electrical mounting: screw
Mechanical mounting: screw
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IXTX22N100L IXTX22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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В кошику  од. на суму  грн.
IXFH26N50P3 IXFH26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
1+534.86 грн
3+384.79 грн
7+363.37 грн
30+353.85 грн
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IXFH80N65X2-4 IXFH80N65X2-4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5825B99978BF&compId=IXFH80N65X2-4.pdf?ci_sign=e1124f754bcfef97bf067a342d7350d292757c2c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1077.41 грн
2+811.63 грн
4+767.20 грн
В кошику  од. на суму  грн.
IXFH80N65X2 IXFH80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
1+982.57 грн
2+794.18 грн
4+750.54 грн
10+721.98 грн
В кошику  од. на суму  грн.
IXFK80N65X2 IXFK80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+1344.84 грн
3+1181.35 грн
В кошику  од. на суму  грн.
IXFT80N65X2HV IXFT80N65X2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5DDDF247B8BF&compId=IXFT80N65X2HV.pdf?ci_sign=8483671aa3976023c370bf7e90b7e5ebca15d53c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH80N65X2 IXTH80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB1FA4137F58BF&compId=IXTH80N65X2.pdf?ci_sign=d8bfcad20b59804a9aa6f35033565e0055cc9678 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
товару немає в наявності
В кошику  од. на суму  грн.
LCA100S LCA100S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
2+349.45 грн
6+154.71 грн
17+146.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA100 LCA100 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+294.77 грн
6+154.71 грн
17+146.78 грн
250+143.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGP36N60A3 IXGP36N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AEA0378A51C3820&compId=IXGA(P%2CH)36N60A3.pdf?ci_sign=ba06c4deb17583973f6fa92da2d0c294ed9e4688 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
товару немає в наявності
В кошику  од. на суму  грн.
IXFK170N10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA4D451E02B38BF&compId=IXFH170N10P_IXFK170N10P.pdf?ci_sign=8e0c57b7145cd2d707e91251170b8da9af42fcd8
IXFK170N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Kind of package: tube
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1006.50 грн
2+696.59 грн
4+658.51 грн
В кошику  од. на суму  грн.
IXFB170N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED466DF8CDA6A18&compId=IXFB170N30P.pdf?ci_sign=d2e1603ab2b4ff6c3b3926b7ca4a5bff751cbdb1
IXFB170N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1279.05 грн
3+1122.64 грн
В кошику  од. на суму  грн.
VUE22-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8896073AAE39C0C4&compId=VUE22-12NO7.pdf?ci_sign=26b20417a95d7d39b4b37d92c0b157bd49d6c9ae
VUE22-12NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 24A; Ifsm: 40A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 24A
Max. forward impulse current: 40A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.92V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1246.59 грн
3+1094.07 грн
В кошику  од. на суму  грн.
VUE22-06NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88960436DB59E0C4&compId=VUE22-06NO7.pdf?ci_sign=d488fd843cac84f64e5b7f9061a3e09fabaf9d12
VUE22-06NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.09V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1197.03 грн
В кошику  од. на суму  грн.
CPC1998J pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FBBAE5D5078BF&compId=cpc1998.pdf?ci_sign=3f6932fbe3787e2750388d95ee237511f744fc66
CPC1998J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 5A
Body dimensions: 20.88x19.91x5.03mm
Control current max.: 150mA
Switched voltage: max. 240V AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: i4-pac
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+721.12 грн
2+581.55 грн
5+549.81 грн
В кошику  од. на суму  грн.
IXGP12N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180
IXGP12N120A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGH12N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180
IXGH12N120A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT75N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993960D1A4DD498BF&compId=IXT_75N10L2.pdf?ci_sign=14d46f1640fe8dff3fd9c2e86627011d0edde846
IXTT75N10L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1032.13 грн
В кошику  од. на суму  грн.
CLA50E1200TC-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06C1A1D9BB8BF&compId=CLA50E1200TC.pdf?ci_sign=b629e30eda934e1f86d73525caad02b28cb70d3d
CLA50E1200TC-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+613.47 грн
3+418.91 грн
7+395.90 грн
В кошику  од. на суму  грн.
CLA50E1200TC-TRL Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
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CPC1150NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20F80C7&compId=CPC1150N.pdf?ci_sign=6c33409f6d640e230d2ef27a0b63d7a2c895247e
CPC1150NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
товару немає в наявності
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IXFT150N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD908A9A238BF&compId=IXF_150N30X3_HV.pdf?ci_sign=c02cea29174068e52cd342ee0467b4c4f54d34e5 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT150N30X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 167ns
Technology: HiPerFET™; X3-Class
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1368.77 грн
3+1201.18 грн
10+1155.16 грн
В кошику  од. на суму  грн.
IXFT150N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CE0509EDC31820&compId=IXFH(T)150N20T.pdf?ci_sign=1eb8849a53fa359ec9a3208d53f9c1a524823d86
IXFT150N20T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXFT150N17T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC653820&compId=IXFT150N17T2.pdf?ci_sign=f262fe46c60fa0aac8b4fe8177f56a21a91be14c
IXFT150N17T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Case: TO268
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 233nC
On-state resistance: 12mΩ
Drain current: 150A
Drain-source voltage: 175V
Power dissipation: 880W
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IXFT150N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0B9820&compId=IXFH150N25X3.pdf?ci_sign=9b6304dddbd0134b0ebf2cbe9b1dfd52edbdaa17
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Case: TO268HV
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 154nC
Reverse recovery time: 140ns
On-state resistance: 9mΩ
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Pulsed drain current: 300A
Power dissipation: 735W
товару немає в наявності
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CPC1135NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21
CPC1135NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
товару немає в наявності
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IXFH170N15X3 media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFQ170N15X3 media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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PM1206 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d
PM1206
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+638.25 грн
3+337.19 грн
8+318.94 грн
В кошику  од. на суму  грн.
PM1204S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99
PM1204S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+569.04 грн
4+300.69 грн
9+284.03 грн
В кошику  од. на суму  грн.
LCA210S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461978040C7&compId=LCA210.pdf?ci_sign=d260a6d8e34592bbe91146cca268c12b869912e4
LCA210S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Operating temperature: -40...85°C
Contacts configuration: SPDT
Type of relay: solid state
Relay variant: 1-phase; current source
Turn-on time: 3ms
Turn-off time: 3ms
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Max. operating current: 85mA
Control current max.: 100mA
Case: DIP8
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 93 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+410.12 грн
5+216.59 грн
12+205.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXXN200N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F3094154329820&compId=IXXN200N60B3.pdf?ci_sign=ef812292331fc8d824cb7af5b362bedf7a3cb9e9
IXXN200N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 940W
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IXXN200N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F320D551551820&compId=IXXN200N60B3H1.pdf?ci_sign=f9a69497086ce9ecb9383c5818b60c7cdfb93b64
IXXN200N60B3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 780W
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IXFH44N50P description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090
IXFH44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+909.09 грн
2+590.28 грн
5+557.75 грн
30+543.47 грн
120+536.33 грн
В кошику  од. на суму  грн.
IXFA26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFA26N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+134.14 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MMIX1F160N30T littelfuse_discrete_mosfets_smpd_packages_mmix1f160n30t_datasheet.pdf.pdf
MMIX1F160N30T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Mounting: SMD
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Gate charge: 367nC
Reverse recovery time: 200ns
On-state resistance: 20mΩ
Kind of channel: enhancement
Case: SMPD
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Type of transistor: N-MOSFET
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2687.12 грн
10+2399.19 грн
В кошику  од. на суму  грн.
IXFH40N50Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F63820&compId=IXFH40N50Q.pdf?ci_sign=3f4d61ef909d6e752c1d54406498f3c6045e4fe5
IXFH40N50Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1138.93 грн
3+999.66 грн
В кошику  од. на суму  грн.
IXTH40N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2
IXTH40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2
IXTQ40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2
IXTT40N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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PM1206S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d
PM1206S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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PM1206STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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IXFP18N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae
IXFP18N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFP18N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D394767F98BF&compId=IXFP18N65X2M.pdf?ci_sign=8bb4700710f80bf16b6ec7153d238ece41bb708b
IXFP18N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFA18N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae
IXFA18N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFH18N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097BF3E60CAD8BF&compId=IXF_18N65X2.pdf?ci_sign=ca3bb5a7d1dc01179cd59a86ff8db7c31cd310ae
IXFH18N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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VBE17-06NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB95AF8C9A00C4&compId=VBE17-06NO7.pdf?ci_sign=a8393222091d5a54bd260b4883ffeacf5c883410
VBE17-06NO7
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 27A; Ifsm: 45A; THT
Case: ECO-PAC 1
Electrical mounting: THT
Technology: FRED
Mechanical mounting: screw
Type of bridge rectifier: single-phase
Max. forward impulse current: 45A
Load current: 27A
Max. off-state voltage: 0.6kV
Version: module
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1079.12 грн
2+803.70 грн
4+760.06 грн
В кошику  од. на суму  грн.
IXFN160N30T pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF90EF782821820&compId=IXFN160N30T.pdf?ci_sign=4f514305338d34fe8741e1d339673060b3d7fe0d
IXFN160N30T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Technology: GigaMOS™
Polarisation: unipolar
Gate charge: 376nC
Reverse recovery time: 200ns
On-state resistance: 19mΩ
Kind of channel: enhancement
Case: SOT227B
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Gate-source voltage: ±30V
Drain-source voltage: 300V
Type of semiconductor module: MOSFET transistor
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IXFK160N30T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CE9C427165138BF&compId=IXF_160N30T.pdf?ci_sign=23e001151aa4a4de2e7e32da29e7d4519594f256
IXFK160N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Mounting: THT
Technology: GigaMOS™
Polarisation: unipolar
Gate charge: 376nC
Reverse recovery time: 200ns
On-state resistance: 19mΩ
Kind of channel: enhancement
Case: TO264
Drain current: 160A
Power dissipation: 1390W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Kind of package: tube
Type of transistor: N-MOSFET
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IXFX160N30T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CE9C427165138BF&compId=IXF_160N30T.pdf?ci_sign=23e001151aa4a4de2e7e32da29e7d4519594f256
IXFX160N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 376nC
On-state resistance: 19mΩ
Kind of channel: enhancement
Case: PLUS247™
Drain current: 160A
Power dissipation: 1390W
Drain-source voltage: 300V
Kind of package: tube
Type of transistor: N-MOSFET
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DSA1-18D pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a
DSA1-18D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 325 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+369.11 грн
4+241.98 грн
10+236.43 грн
11+228.49 грн
100+222.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MEE300-06DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Max. forward impulse current: 2.4kA
Semiconductor structure: double series
Max. off-state voltage: 0.6kV
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.19V
Load current: 304A
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DSP25-16A media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
DSP25-16A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: TO247-3
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+427.21 грн
В кошику  од. на суму  грн.
DSP25-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEC87D9A344143&compId=DSP25-12A.pdf?ci_sign=9b32012fa217f3b41cdd73f28c4975da5fe89caa
DSP25-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 1.16V
Power dissipation: 160W
Load current: 25A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Semiconductor structure: double series
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+334.08 грн
4+266.58 грн
10+252.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSP25-16AR media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
DSP25-16AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 28A x2
Semiconductor structure: double series
Case: ISOPLUS247™
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Power dissipation: 100W
Kind of package: tube
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+705.74 грн
2+540.29 грн
5+510.94 грн
10+506.97 грн
В кошику  од. на суму  грн.
DSP25-16AT-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC498C99CFDA0C4&compId=DSP25-16AT.pdf?ci_sign=0b5fa43321000384158f4db8f203a913258a48d6
DSP25-16AT-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Max. forward voltage: 1.16V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
товару немає в наявності
В кошику  од. на суму  грн.
VHF25-12IO7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1944179591820&compId=VHF25-ser.pdf?ci_sign=b45349266645b088e679b0569fcbdcd6528c9f31
VHF25-12IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Version: module
Mechanical mounting: screw
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Electrical mounting: THT
Gate current: 25/50mA
Load current: 32A
Max. forward impulse current: 180A
Max. off-state voltage: 1.2kV
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1241.46 грн
2+918.74 грн
3+868.75 грн
25+851.30 грн
В кошику  од. на суму  грн.
IXDD604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+223.86 грн
7+152.33 грн
10+151.54 грн
17+143.60 грн
25+142.81 грн
50+138.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDI604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 1010 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+130.72 грн
10+88.86 грн
12+83.31 грн
31+78.54 грн
100+75.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTN22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA743238E52B820&compId=IXTN22N100L.pdf?ci_sign=bd0f90a435af556a9c7a240091db1d3ed3d343fd
IXTN22N100L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.6Ω
Gate charge: 0.27µC
Kind of channel: enhancement
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 1µs
Technology: Linear™
Electrical mounting: screw
Mechanical mounting: screw
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В кошику  од. на суму  грн.
IXTX22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8
IXTX22N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXFH26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFH26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+534.86 грн
3+384.79 грн
7+363.37 грн
30+353.85 грн
В кошику  од. на суму  грн.
IXFH80N65X2-4 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5825B99978BF&compId=IXFH80N65X2-4.pdf?ci_sign=e1124f754bcfef97bf067a342d7350d292757c2c
IXFH80N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1077.41 грн
2+811.63 грн
4+767.20 грн
В кошику  од. на суму  грн.
IXFH80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c
IXFH80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+982.57 грн
2+794.18 грн
4+750.54 грн
10+721.98 грн
В кошику  од. на суму  грн.
IXFK80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c
IXFK80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1344.84 грн
3+1181.35 грн
В кошику  од. на суму  грн.
IXFT80N65X2HV pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5DDDF247B8BF&compId=IXFT80N65X2HV.pdf?ci_sign=8483671aa3976023c370bf7e90b7e5ebca15d53c
IXFT80N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXTH80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB1FA4137F58BF&compId=IXTH80N65X2.pdf?ci_sign=d8bfcad20b59804a9aa6f35033565e0055cc9678
IXTH80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
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LCA100S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17
LCA100S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+349.45 грн
6+154.71 грн
17+146.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA100 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17
LCA100
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+294.77 грн
6+154.71 грн
17+146.78 грн
250+143.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGP36N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AEA0378A51C3820&compId=IXGA(P%2CH)36N60A3.pdf?ci_sign=ba06c4deb17583973f6fa92da2d0c294ed9e4688
IXGP36N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
товару немає в наявності
В кошику  од. на суму  грн.
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