Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXFN100N50P | IXYS |
![]() ![]() Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 75A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 250A Power dissipation: 1.04kW Technology: HiPerFET™ Kind of channel: enhancement Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFB100N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Drain-source voltage: 500V Drain current: 100A Case: PLUS264™ Polarisation: unipolar On-state resistance: 49mΩ Power dissipation: 1890W Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mounting: THT Kind of package: tube Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FMM22-05PF | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A Mounting: THT Power dissipation: 132W Polarisation: unipolar Kind of package: tube Gate charge: 50nC Technology: PolarHV™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 55A Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 200ns Drain-source voltage: 500V Drain current: 13A On-state resistance: 0.27Ω Type of transistor: N-MOSFET x2 |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IX4310N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Mounting: SMD Case: SO8 Operating temperature: -40...125°C Kind of package: tube Output current: -2...2A Number of channels: 2 Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 5...24V |
на замовлення 1672 шт: термін постачання 21-30 дні (днів) |
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CPC1302GSTR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs CTR@If: 1000-8000%@1mA Trigger current: 50mA Slew rate: 0.25V/μs Type of optocoupler: optocoupler Mounting: SMD Max. off-state voltage: 5V Turn-on time: 1µs Turn-off time: 80µs Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV |
на замовлення 545 шт: термін постачання 21-30 дні (днів) |
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CPC1302G | IXYS |
![]() Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8 CTR@If: 1000-8000%@1mA Type of optocoupler: optocoupler Mounting: THT Case: DIP8 Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV |
на замовлення 388 шт: термін постачання 21-30 дні (днів) |
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IXTP48N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 48A Power dissipation: 250W Case: TO220AB On-state resistance: 50mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 130ns |
на замовлення 251 шт: термін постачання 21-30 дні (днів) |
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IXFN300N20X3 | IXYS |
![]() ![]() Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A Polarisation: unipolar Drain-source voltage: 200V Drain current: 300A Power dissipation: 695W Case: SOT227B On-state resistance: 3.5mΩ Gate charge: 375nC Kind of channel: enhancement Reverse recovery time: 172ns Pulsed drain current: 700A Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; X3-Class Gate-source voltage: ±30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTN110N20L2 | IXYS |
![]() Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 500nC Technology: Linear L2™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 275A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 420ns Drain-source voltage: 200V Drain current: 100A On-state resistance: 24mΩ Power dissipation: 735W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH1N200P3HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO247HV On-state resistance: 40Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTK110N20L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: TO264 On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTQ60N20L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 60A Power dissipation: 540W Case: TO3P On-state resistance: 45mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 330ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTT3N200P3HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 3A Power dissipation: 520W Case: TO268HV On-state resistance: 8Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 420ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTT80N20L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 80A Power dissipation: 520W Case: TO268 On-state resistance: 32mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 250ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH80N20L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 80A Power dissipation: 520W Case: TO247-3 On-state resistance: 32mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 250ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA1N200P3HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO263HV On-state resistance: 40Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH3N200P3HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO247HV; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 3A Power dissipation: 520W Case: TO247HV On-state resistance: 5Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 420ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXLF19N250A | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 19A Power dissipation: 250W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 70A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 0.1µs Turn-off time: 0.6µs Features of semiconductor devices: high voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PLA194S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 3ms Turn-off time: 2ms |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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DSEC60-06A | IXYS |
![]() Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: TO247-3 Max. forward voltage: 1.6V Power dissipation: 165W Reverse recovery time: 35ns Technology: HiPerFRED™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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LAA100P | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 On-state resistance: 25Ω Mounting: SMT Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Operating temperature: -40...85°C |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IXFT120N15P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO268 On-state resistance: 16mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Technology: HiPerFET™; PolarHT™ Gate-source voltage: ±20V |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXTP32N65X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 500W Case: TO220AB On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 400ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTP32N65XM | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 78W Case: TO220FP On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 400ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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OMA160 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Operating temperature: -40...85°C Case: DIP6 On-state resistance: 100Ω Turn-on time: 125µs Turn-off time: 125µs Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 50mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: THT |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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CPC1510GSTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 200mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 15Ω Mounting: SMT Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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LAA110PL | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 295 шт: термін постачання 21-30 дні (днів) |
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LAA110S | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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LAA110 | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 231 шт: термін постачання 21-30 дні (днів) |
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LBA110 | IXYS |
![]() ![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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LBA110S | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
на замовлення 258 шт: термін постачання 21-30 дні (днів) |
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LCC110S | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Turn-on time: 4ms Insulation voltage: 3.75kV On-state resistance: 35Ω Contacts configuration: SPDT Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Manufacturer series: OptoMOS Turn-off time: 4ms |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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LBB110 | IXYS |
![]() ![]() Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS On-state resistance: 35Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Case: DIP8 |
на замовлення 115 шт: термін постачання 21-30 дні (днів) |
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PLA110 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Turn-off time: 0.5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Case: DIP6 Operating temperature: -40...85°C Control current max.: 50mA Mounting: THT On-state resistance: 22Ω Turn-on time: 1ms |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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PLA110S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Turn-off time: 0.5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Case: DIP6 Operating temperature: -40...85°C Control current max.: 50mA Mounting: SMT On-state resistance: 22Ω Turn-on time: 1ms |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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LCC110 | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: THT Body dimensions: 9.65x6.35x3.3mm Turn-on time: 4ms Insulation voltage: 3.75kV On-state resistance: 35Ω Contacts configuration: SPDT Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Manufacturer series: OptoMOS Turn-off time: 4ms |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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PLA110LS | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Turn-off time: 0.5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Case: DIP6 Operating temperature: -40...85°C Control current max.: 50mA Mounting: SMT On-state resistance: 22Ω Turn-on time: 1ms |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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PAA110P | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS Type of relay: solid state Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Turn-off time: 0.25ms Body dimensions: 9.65x6.35x2.16mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Mounting: SMT On-state resistance: 22Ω Turn-on time: 1ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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PLA110L | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Turn-off time: 0.5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Case: DIP6 Operating temperature: -40...85°C Control current max.: 50mA Mounting: THT On-state resistance: 22Ω Turn-on time: 1ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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LBA110L | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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PAA110PL | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS Type of relay: solid state Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Turn-off time: 0.25ms Body dimensions: 9.65x6.35x2.16mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Mounting: SMT On-state resistance: 22Ω Turn-on time: 1ms |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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PAA110S | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS Type of relay: solid state Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Turn-off time: 0.25ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Mounting: SMT On-state resistance: 22Ω Turn-on time: 1ms |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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LBB110S | IXYS |
![]() Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS On-state resistance: 35Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Case: DIP8 |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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PAA110 | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS Type of relay: solid state Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Turn-off time: 0.25ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Mounting: THT On-state resistance: 22Ω Turn-on time: 1ms |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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LCB110S | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC On-state resistance: 35Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Case: DIP6 |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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LBB110P | IXYS |
![]() Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.66x6.35x2.16mm Turn-off time: 3ms Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA On-state resistance: 35Ω Mounting: SMT Turn-on time: 3ms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MDD172-16N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.6kV; If: 190A; Y4-M6; Ufmax: 1.15V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 190A Case: Y4-M6 Max. forward voltage: 1.15V Max. forward impulse current: 5.6kA Electrical mounting: screw Max. load current: 300A Mechanical mounting: screw |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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MDD172-18N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.8kV; If: 190A; Y4-M6; Ufmax: 1.15V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 190A Case: Y4-M6 Max. forward voltage: 1.15V Max. forward impulse current: 5.6kA Electrical mounting: screw Max. load current: 300A Mechanical mounting: screw |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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MDD200-22N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 224A Case: Y4-M6 Max. forward voltage: 1.07V Max. forward impulse current: 8.93kA Electrical mounting: screw Max. load current: 350A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MDD142-08N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 165A Case: Y4-M6 Max. forward voltage: 1.05V Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MDD142-12N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V Case: Y4-M6 Max. off-state voltage: 1.2kV Max. forward voltage: 1.05V Load current: 165A Semiconductor structure: double series Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MDD172-08N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 800V; If: 190A; Y4-M6; Ufmax: 0.96V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 190A Case: Y4-M6 Max. forward voltage: 0.96V Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MDD200-16N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 224A Case: Y4-M6 Max. forward voltage: 1.07V Max. forward impulse current: 8.93kA Electrical mounting: screw Max. load current: 350A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MDD142-14N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 165A Case: Y4-M6 Max. forward voltage: 1.05V Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MDD200-14N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 224A Case: Y4-M6 Max. forward voltage: 1.07V Max. forward impulse current: 10.5kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MDD200-18N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 224A Case: Y4-M6 Max. forward voltage: 1.07V Max. forward impulse current: 10.5kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MDD142-18N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V Case: Y4-M6 Max. off-state voltage: 1.8kV Max. forward voltage: 1.05V Load current: 165A Semiconductor structure: double series Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MDD172-14N1 | IXYS |
![]() ![]() Description: Module: diode; double series; 1.4kV; If: 190A; Y4-M6; Ufmax: 0.96V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 190A Case: Y4-M6 Max. forward voltage: 0.96V Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
MDD172-12N1 | IXYS |
![]() ![]() ![]() Description: Module: diode; double series; 1.2kV; If: 190Ax2; Y4-M6; Ufmax: 1.15V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 190A x2 Case: Y4-M6 Max. forward voltage: 1.15V Max. forward impulse current: 5.6kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CPC1010N | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Contacts configuration: SPST-NO Insulation voltage: 1.5kV Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm Turn-off time: 3ms Turn-on time: 3ms Control current max.: 50mA On-state resistance: 11.5Ω Case: SOP4 Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. |
IXFN100N50P | ![]() |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
IXFB100N50P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Drain-source voltage: 500V
Drain current: 100A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 49mΩ
Power dissipation: 1890W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Drain-source voltage: 500V
Drain current: 100A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 49mΩ
Power dissipation: 1890W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
FMM22-05PF |
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Mounting: THT
Power dissipation: 132W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 55A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Mounting: THT
Power dissipation: 132W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarHV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 55A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET x2
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1308.12 грн |
3+ | 1148.16 грн |
IX4310N |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -2...2A
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 5...24V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -2...2A
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 5...24V
на замовлення 1672 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 107.06 грн |
10+ | 60.70 грн |
25+ | 51.20 грн |
30+ | 29.97 грн |
81+ | 28.33 грн |
CPC1302GSTR |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Mounting: SMD
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
CTR@If: 1000-8000%@1mA
Trigger current: 50mA
Slew rate: 0.25V/μs
Type of optocoupler: optocoupler
Mounting: SMD
Max. off-state voltage: 5V
Turn-on time: 1µs
Turn-off time: 80µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
на замовлення 545 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 193.20 грн |
9+ | 106.89 грн |
23+ | 100.91 грн |
500+ | 97.18 грн |
CPC1302G |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
CTR@If: 1000-8000%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
на замовлення 388 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 196.42 грн |
9+ | 106.37 грн |
24+ | 100.56 грн |
IXTP48N20T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 130ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 130ns
на замовлення 251 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 233.45 грн |
3+ | 194.35 грн |
6+ | 164.45 грн |
15+ | 155.48 грн |
50+ | 154.73 грн |
IXFN300N20X3 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 695W
Case: SOT227B
On-state resistance: 3.5mΩ
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
Pulsed drain current: 700A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 695W
Case: SOT227B
On-state resistance: 3.5mΩ
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
Pulsed drain current: 700A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
товару немає в наявності
В кошику
од. на суму грн.
IXTN110N20L2 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 500nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 275A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Drain-source voltage: 200V
Drain current: 100A
On-state resistance: 24mΩ
Power dissipation: 735W
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 500nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 275A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Drain-source voltage: 200V
Drain current: 100A
On-state resistance: 24mΩ
Power dissipation: 735W
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
IXTH1N200P3HV |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
товару немає в наявності
В кошику
од. на суму грн.
IXTK110N20L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
товару немає в наявності
В кошику
од. на суму грн.
IXTQ60N20L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXTT3N200P3HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
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IXTT80N20L |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
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IXTH80N20L |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
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IXTA1N200P3HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
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IXTH3N200P3HV |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO247HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 5Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO247HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 5Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
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IXLF19N250A |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 19A
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 19A
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
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PLA194S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 256.80 грн |
6+ | 157.72 грн |
16+ | 149.50 грн |
DSEC60-06A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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LAA100P |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 322.00 грн |
4+ | 233.22 грн |
IXFT120N15P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO268
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO268
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±20V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 762.34 грн |
2+ | 464.94 грн |
6+ | 439.53 грн |
IXTP32N65X |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
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IXTP32N65XM |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 78W
Case: TO220FP
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 78W
Case: TO220FP
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
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OMA160 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
на замовлення 75 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 329.24 грн |
6+ | 154.73 грн |
16+ | 146.51 грн |
CPC1510GSTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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LAA110PL |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 295 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 322.00 грн |
4+ | 225.00 грн |
11+ | 213.04 грн |
LAA110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 228 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 403.30 грн |
4+ | 219.02 грн |
11+ | 207.06 грн |
LAA110 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 231 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 437.12 грн |
4+ | 219.02 грн |
11+ | 207.06 грн |
LBA110 | ![]() |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 251.96 грн |
LBA110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 258 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 532.10 грн |
4+ | 228.74 грн |
11+ | 216.03 грн |
LCC110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
на замовлення 166 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 504.74 грн |
5+ | 217.52 грн |
12+ | 205.56 грн |
LBB110 | ![]() |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
на замовлення 115 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 406.52 грн |
4+ | 258.64 грн |
10+ | 244.43 грн |
PLA110 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: THT
On-state resistance: 22Ω
Turn-on time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: THT
On-state resistance: 22Ω
Turn-on time: 1ms
на замовлення 54 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 305.90 грн |
6+ | 175.66 грн |
14+ | 165.94 грн |
PLA110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
на замовлення 125 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 281.75 грн |
6+ | 178.65 грн |
14+ | 168.94 грн |
LCC110 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
на замовлення 99 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 483.80 грн |
5+ | 215.28 грн |
12+ | 203.32 грн |
PLA110LS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
на замовлення 95 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 288.19 грн |
5+ | 182.39 грн |
14+ | 172.67 грн |
PAA110P |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.25ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.25ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 483.80 грн |
3+ | 336.38 грн |
8+ | 318.44 грн |
PLA110L |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: THT
On-state resistance: 22Ω
Turn-on time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Case: DIP6
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: THT
On-state resistance: 22Ω
Turn-on time: 1ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 410.55 грн |
5+ | 182.39 грн |
14+ | 172.67 грн |
LBA110L |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 412.16 грн |
4+ | 236.21 грн |
10+ | 235.46 грн |
11+ | 222.76 грн |
PAA110PL |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.25ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.25ms
Body dimensions: 9.65x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
на замовлення 98 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 487.83 грн |
3+ | 342.36 грн |
8+ | 323.67 грн |
PAA110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.25ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.25ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: SMT
On-state resistance: 22Ω
Turn-on time: 1ms
на замовлення 90 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 511.18 грн |
3+ | 336.38 грн |
8+ | 318.44 грн |
LBB110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 364.66 грн |
4+ | 258.64 грн |
10+ | 244.43 грн |
PAA110 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.25ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: THT
On-state resistance: 22Ω
Turn-on time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Turn-off time: 0.25ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Mounting: THT
On-state resistance: 22Ω
Turn-on time: 1ms
на замовлення 43 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 488.64 грн |
3+ | 335.63 грн |
8+ | 317.69 грн |
LCB110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
на замовлення 16 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 213.32 грн |
7+ | 139.04 грн |
LBB110P |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
On-state resistance: 35Ω
Mounting: SMT
Turn-on time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
On-state resistance: 35Ω
Mounting: SMT
Turn-on time: 3ms
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MDD172-16N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 190A; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 190A; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 3700.58 грн |
6+ | 3315.16 грн |
MDD172-18N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 190A; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 190A; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 3809.26 грн |
MDD200-22N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
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В кошику
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MDD142-08N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
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В кошику
од. на суму грн.
MDD142-12N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.05V
Load current: 165A
Semiconductor structure: double series
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.05V
Load current: 165A
Semiconductor structure: double series
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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MDD172-08N1 |
![]() ![]() |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 190A; Y4-M6; Ufmax: 0.96V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 0.96V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 800V; If: 190A; Y4-M6; Ufmax: 0.96V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 0.96V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
MDD200-16N1 |
![]() ![]() |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
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В кошику
од. на суму грн.
MDD142-14N1 |
![]() ![]() |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
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В кошику
од. на суму грн.
MDD200-14N1 |
![]() ![]() |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
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од. на суму грн.
MDD200-18N1 |
![]() ![]() |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
MDD142-18N1 |
![]() ![]() |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.05V
Load current: 165A
Semiconductor structure: double series
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.05V
Load current: 165A
Semiconductor structure: double series
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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MDD172-14N1 |
![]() ![]() |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 190A; Y4-M6; Ufmax: 0.96V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 0.96V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 190A; Y4-M6; Ufmax: 0.96V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 0.96V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
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В кошику
од. на суму грн.
MDD172-12N1 |
![]() ![]() ![]() |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 190Ax2; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 190A x2
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 190Ax2; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 190A x2
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Mechanical mounting: screw
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CPC1010N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Case: SOP4
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Case: SOP4
Mounting: SMT
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од. на суму грн.