Продукція > IXYS > Всі товари виробника IXYS (18217) > Сторінка 286 з 304

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IX4340NTR IX4340NTR IXYS littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
товару немає в наявності
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CLA100E1200HB CLA100E1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BB0E148940D2&compId=CLA100E1200HB.pdf?ci_sign=f1fa490dbba8e21a47a9c02628c727e624f7169e Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.19kA
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
1+502.39 грн
3+380.03 грн
7+359.40 грн
30+345.91 грн
В кошику  од. на суму  грн.
IXFP20N85X IXFP20N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD263488393820&compId=IXFH(P)20N85X.pdf?ci_sign=7c12a971503592693c6f40300c433ab581bc443f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 63nC
Reverse recovery time: 190ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
3+187.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXKP20N60C5M IXKP20N60C5M IXYS IXKP20N60C5M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Reverse recovery time: 340ns
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IXTP20N65X2M IXTP20N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284880A45BD9820&compId=IXTP20N65X2M.pdf?ci_sign=03a7e0c24a99191546b97318a998a1d46111d3a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
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IXYP20N65B3D1 IXYP20N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8D967E8091820&compId=IXYP20N65B3D1.pdf?ci_sign=9728344ea7308948dfe3c1a333d2cbb4c2d76f0b Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
товару немає в наявності
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IXKH20N60C5 IXKH20N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6F7820&compId=IXK(H)20N60C5.pdf?ci_sign=c65d3b92b0e7d2e519176033758644dd7791b0c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 32nC
на замовлення 119 шт:
термін постачання 21-30 дні (днів)
1+512.65 грн
3+341.15 грн
8+322.91 грн
В кошику  од. на суму  грн.
IXTA60N20T IXTA60N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Kind of channel: enhancement
Case: TO263
Type of transistor: N-MOSFET
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
2+354.58 грн
3+295.93 грн
4+236.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP60N20T IXTP60N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 212 шт:
термін постачання 21-30 дні (днів)
2+410.97 грн
4+273.72 грн
10+258.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ60N20T IXTQ60N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Kind of channel: enhancement
Case: TO3P
Type of transistor: N-MOSFET
на замовлення 233 шт:
термін постачання 21-30 дні (днів)
2+411.83 грн
5+210.25 грн
13+198.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYN120N120C3 IXYN120N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33CFF369FB820&compId=IXYN120N120C3.pdf?ci_sign=0cb637b49ca6754540e316b6ac2e3f1cf1f671e8 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 1.2kW
Case: SOT227B
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Max. off-state voltage: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXFT50N60P3 IXFT50N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
1+774.95 грн
2+590.28 грн
5+557.75 грн
В кошику  од. на суму  грн.
IXFT50N60X IXFT50N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BFA14AED1820&compId=IXFH(Q%2CT)50N60X.pdf?ci_sign=4f276076f8a13b14449da0ce3f84380c73548c0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+981.72 грн
2+652.95 грн
3+652.16 грн
4+617.25 грн
В кошику  од. на суму  грн.
IXXA50N60B3 IXXA50N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO263
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60B3 IXXH50N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
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IXXH50N60B3D1 IXXH50N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA58E72F17820&compId=IXXH50N60B3D1.pdf?ci_sign=75c42883b408f9ed323b77849ddeadfafc218900 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику  од. на суму  грн.
IXXH50N60C3 IXXH50N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAAB8AF23B1820&compId=IXXH50N60C3.pdf?ci_sign=8902e9a7c437918061e7761a3e038743cd4f6602 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
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IXXH50N60C3D1 IXXH50N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAB1987338D820&compId=IXXH50N60C3D1.pdf?ci_sign=a291cc31d53c6e5ac3ce58cb38dfe0d72c580304 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXP50N60B3 IXXP50N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику  од. на суму  грн.
IXXH150N60C3 IXXH150N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB84B2D4667820&compId=IXXH150N60C3.pdf?ci_sign=e2edc0f05d79079a7a3e1b1ee77b81648e551054 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
на замовлення 241 шт:
термін постачання 21-30 дні (днів)
1+1062.89 грн
2+707.70 грн
4+669.61 грн
В кошику  од. на суму  грн.
IXYN150N60B3 IXYN150N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB8C89CC895820&compId=IXYN150N60B3.pdf?ci_sign=2b81f77306a9a614cab35e665551c8d81a0f0fd4 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 830W
Case: SOT227B
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 140A
Semiconductor structure: single transistor
Pulsed collector current: 750A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
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IXYA20N65C3 IXYA20N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1601610FD9820&compId=IXYA(H)20N65C3.pdf?ci_sign=622839bec752ab1a386c7b6ee51037b152aed90c Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYA20N65C3D1 IXYA20N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA190856D398BF&compId=IXY_20N65C3D1.pdf?ci_sign=fe6215c9611b11121eb070e7e1585269872ac75f Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
на замовлення 141 шт:
термін постачання 21-30 дні (днів)
2+242.65 грн
3+202.31 грн
6+176.92 грн
15+167.40 грн
50+161.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYH20N65C3 IXYH20N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1601610FD9820&compId=IXYA(H)20N65C3.pdf?ci_sign=622839bec752ab1a386c7b6ee51037b152aed90c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
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В кошику  од. на суму  грн.
IXYP20N65C3D1 IXYP20N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA190856D398BF&compId=IXY_20N65C3D1.pdf?ci_sign=fe6215c9611b11121eb070e7e1585269872ac75f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
на замовлення 287 шт:
термін постачання 21-30 дні (днів)
2+320.40 грн
7+149.95 грн
18+141.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYP20N65C3D1M IXYP20N65C3D1M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE410F543879820&compId=IXYP20N65C3D1M.pdf?ci_sign=1947662e3b6d9a26d26a809238c9086d39d68c63 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFK120N65X2 IXFK120N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB63306F97D8BF&compId=IXFK120N65X2_IXFX120N65X2.pdf?ci_sign=0c1bd7c19c3aa665ef6e1d8149c6a814e49a737a Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 220ns
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В кошику  од. на суму  грн.
IXFX120N65X2 IXFX120N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB63306F97D8BF&compId=IXFK120N65X2_IXFX120N65X2.pdf?ci_sign=0c1bd7c19c3aa665ef6e1d8149c6a814e49a737a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 240nC
Reverse recovery time: 220ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTK120N65X2 IXTK120N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB29CD38EED8BF&compId=IXT_120N65X2.pdf?ci_sign=ba45e36110c138614c3f7686f328897e9b74d68c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 230nC
Reverse recovery time: 505ns
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В кошику  од. на суму  грн.
IXTX120N65X2 IXTX120N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB29CD38EED8BF&compId=IXT_120N65X2.pdf?ci_sign=ba45e36110c138614c3f7686f328897e9b74d68c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PLUS247™
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Gate charge: 230nC
Reverse recovery time: 505ns
On-state resistance: 23mΩ
Power dissipation: 1.25kW
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В кошику  од. на суму  грн.
IXTK120N25P IXTK120N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF910BFD6664FE27&compId=IXTK120N25P-DTE.pdf?ci_sign=9477a8a3509209b374b486a84ef243ec93f2a551 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Technology: Polar™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Power dissipation: 700W
на замовлення 105 шт:
термін постачання 21-30 дні (днів)
1+1103.05 грн
2+839.40 грн
4+793.38 грн
25+787.04 грн
50+762.44 грн
В кошику  од. на суму  грн.
IXFR24N80P IXFR24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2857DA3FF1A1820&compId=IXFR24N80P.pdf?ci_sign=873856e0e863a27e19dde25c672bc74899b0f721 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+861.25 грн
2+626.77 грн
3+625.98 грн
5+591.86 грн
В кошику  од. на суму  грн.
IXFX34N80 IXFX34N80 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFX44N80P IXFX44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
CPC1972G CPC1972G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
5+99.97 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXTP08N100D2 IXTP08N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+247.78 грн
9+115.83 грн
23+109.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP44N25X3 IXFP44N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: THT
Power dissipation: 240W
Pulsed drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: HiPerFET™; X3-Class
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 33nC
Reverse recovery time: 87ns
On-state resistance: 40mΩ
Drain current: 44A
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В кошику  од. на суму  грн.
IXTT64N25P IXTT64N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CE00FFAAFE27&compId=IXTQ64N25P-DTE.pdf?ci_sign=8629d9d38dc4d997f8392b5cabb1618306ba9fab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO268
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
товару немає в наявності
В кошику  од. на суму  грн.
CPC1394GR CPC1394GR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320045E0C7&compId=CPC1394.pdf?ci_sign=d7d0c6af5a4e35ec08801baf972a55daaba17e76 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 40Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 536 шт:
термін постачання 21-30 дні (днів)
2+229.84 грн
8+121.39 грн
22+115.04 грн
500+112.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1394GV CPC1394GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320045E0C7&compId=CPC1394.pdf?ci_sign=d7d0c6af5a4e35ec08801baf972a55daaba17e76 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-off time: 3ms
Turn-on time: 5ms
On-state resistance: 40Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Kind of output: MOSFET
на замовлення 452 шт:
термін постачання 21-30 дні (днів)
2+229.84 грн
8+121.39 грн
22+115.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK78N50P3 IXFK78N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D410DC139CF820&compId=IXFK(X)78N50P3.pdf?ci_sign=5f610dbd75428f65aab0cd1f86573c38c778a434 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+1096.21 грн
2+744.19 грн
4+702.94 грн
В кошику  од. на суму  грн.
IXFK98N50P3 IXFK98N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35AB462127820&compId=IXFK(X)98N50P3.pdf?ci_sign=503a48a7a9f46ebf3b6b7f092e5d7520b9bd3c32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFX78N50P3 IXFX78N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D410DC139CF820&compId=IXFK(X)78N50P3.pdf?ci_sign=5f610dbd75428f65aab0cd1f86573c38c778a434 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFX98N50P3 IXFX98N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35AB462127820&compId=IXFK(X)98N50P3.pdf?ci_sign=503a48a7a9f46ebf3b6b7f092e5d7520b9bd3c32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+1269.66 грн
2+917.15 грн
3+867.17 грн
В кошику  од. на суму  грн.
DSB15IM45IB DSB15IM45IB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9DE16ECF1B8BF&compId=DSB15IM45IB.pdf?ci_sign=111fdfb47a0ed9e4fcc4c5a565d872868ea000e5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.55V; 70W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: TO262
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
на замовлення 494 шт:
термін постачання 21-30 дні (днів)
16+27.34 грн
17+24.04 грн
18+23.33 грн
50+22.61 грн
109+22.29 грн
250+21.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
IXFN210N30P3 IXFN210N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF91C31173D1820&compId=IXFN210N30P3.pdf?ci_sign=822d8ac666dc943cca774a0528aebea732c66ae7 Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 268nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2719.59 грн
В кошику  од. на суму  грн.
MCMA35PD1600TB MCMA35PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8104FC036B00C4&compId=MCMA35PD1600TB.pdf?ci_sign=55ae504df2d82c6c04ccd8c02f974e8b0f361824 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.22V
Load current: 35A
Max. load current: 55A
Max. forward impulse current: 520A
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+1537.94 грн
В кошику  од. на суму  грн.
MCD132-08io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B8ECB0EE1D388143&compId=MCD132-08io1.pdf?ci_sign=4343034c745f825e4fdd0005efd4f09ce7a057f3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
товару немає в наявності
В кошику  од. на суму  грн.
IXFH16N80P IXFH16N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT16N80P IXFT16N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFX27N80Q IXFX27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+1472.15 грн
2+1292.42 грн
30+1281.31 грн
В кошику  од. на суму  грн.
IXFH10N100P IXFH10N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECCF1314CB18BF&compId=IXFH10N100P.pdf?ci_sign=7f7b7c35add8447660ce7a497e76d475f7220bfa Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 300ns
On-state resistance: 1.4Ω
Drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 380W
Drain-source voltage: 1kV
на замовлення 328 шт:
термін постачання 21-30 дні (днів)
1+545.97 грн
3+388.76 грн
7+368.13 грн
30+359.40 грн
В кошику  од. на суму  грн.
IXTP05N100M IXTP05N100M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B495AF820&compId=IXTP05N100M.pdf?ci_sign=22dedd1505f2893fd7c4f30fd914ac61d85a74fc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYA50N65C3 IXYA50N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXYH50N65C3 IXYH50N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXYH50N65C3D1 IXYH50N65C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA99A964DD41820&compId=IXYH50N65C3D1.pdf?ci_sign=db15a784f69e2c7f93edb1f3c8b2b0b8e36ac44c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXYP50N65C3 IXYP50N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTX120P20T IXTX120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1778.03 грн
2+1560.58 грн
10+1500.29 грн
В кошику  од. на суму  грн.
IXGX320N60B3 IXGX320N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FAC0877D7820&compId=IXGK(x)320N60B3.pdf?ci_sign=7f3fb659fb9326cceb8b246edbd061c9df14d441 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1648.16 грн
В кошику  од. на суму  грн.
IXFA34N65X2 IXFA34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C1609820&compId=IXFA34N65X2.pdf?ci_sign=2925d4e0e806409ff82e30397fb37dc4d7cc660b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
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В кошику  од. на суму  грн.
IX4340NTR littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00
IX4340NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
товару немає в наявності
В кошику  од. на суму  грн.
CLA100E1200HB pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BB0E148940D2&compId=CLA100E1200HB.pdf?ci_sign=f1fa490dbba8e21a47a9c02628c727e624f7169e
CLA100E1200HB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.19kA
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+502.39 грн
3+380.03 грн
7+359.40 грн
30+345.91 грн
В кошику  од. на суму  грн.
IXFP20N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD263488393820&compId=IXFH(P)20N85X.pdf?ci_sign=7c12a971503592693c6f40300c433ab581bc443f
IXFP20N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 63nC
Reverse recovery time: 190ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+187.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXKP20N60C5M IXKP20N60C5M.pdf
IXKP20N60C5M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Reverse recovery time: 340ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP20N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284880A45BD9820&compId=IXTP20N65X2M.pdf?ci_sign=03a7e0c24a99191546b97318a998a1d46111d3a9
IXTP20N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
товару немає в наявності
В кошику  од. на суму  грн.
IXYP20N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8D967E8091820&compId=IXYP20N65B3D1.pdf?ci_sign=9728344ea7308948dfe3c1a333d2cbb4c2d76f0b
IXYP20N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
товару немає в наявності
В кошику  од. на суму  грн.
IXKH20N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6F7820&compId=IXK(H)20N60C5.pdf?ci_sign=c65d3b92b0e7d2e519176033758644dd7791b0c2
IXKH20N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 32nC
на замовлення 119 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+512.65 грн
3+341.15 грн
8+322.91 грн
В кошику  од. на суму  грн.
IXTA60N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631
IXTA60N20T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Kind of channel: enhancement
Case: TO263
Type of transistor: N-MOSFET
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+354.58 грн
3+295.93 грн
4+236.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP60N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631
IXTP60N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 212 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+410.97 грн
4+273.72 грн
10+258.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ60N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631
IXTQ60N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Kind of channel: enhancement
Case: TO3P
Type of transistor: N-MOSFET
на замовлення 233 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+411.83 грн
5+210.25 грн
13+198.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYN120N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33CFF369FB820&compId=IXYN120N120C3.pdf?ci_sign=0cb637b49ca6754540e316b6ac2e3f1cf1f671e8
IXYN120N120C3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 1.2kW
Case: SOT227B
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Max. off-state voltage: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXFT50N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d
IXFT50N60P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+774.95 грн
2+590.28 грн
5+557.75 грн
В кошику  од. на суму  грн.
IXFT50N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BFA14AED1820&compId=IXFH(Q%2CT)50N60X.pdf?ci_sign=4f276076f8a13b14449da0ce3f84380c73548c0a
IXFT50N60X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+981.72 грн
2+652.95 грн
3+652.16 грн
4+617.25 грн
В кошику  од. на суму  грн.
IXXA50N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa
IXXA50N60B3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO263
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику  од. на суму  грн.
IXXH50N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa
IXXH50N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику  од. на суму  грн.
IXXH50N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA58E72F17820&compId=IXXH50N60B3D1.pdf?ci_sign=75c42883b408f9ed323b77849ddeadfafc218900
IXXH50N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику  од. на суму  грн.
IXXH50N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAAB8AF23B1820&compId=IXXH50N60C3.pdf?ci_sign=8902e9a7c437918061e7761a3e038743cd4f6602
IXXH50N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику  од. на суму  грн.
IXXH50N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAB1987338D820&compId=IXXH50N60C3D1.pdf?ci_sign=a291cc31d53c6e5ac3ce58cb38dfe0d72c580304
IXXH50N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику  од. на суму  грн.
IXXP50N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAA1242988B820&compId=IXXA(p%2Ch)50N60B3.pdf?ci_sign=71c5d36b52ddfe9e79064463744b29a6387fe3fa
IXXP50N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику  од. на суму  грн.
IXXH150N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB84B2D4667820&compId=IXXH150N60C3.pdf?ci_sign=e2edc0f05d79079a7a3e1b1ee77b81648e551054
IXXH150N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
на замовлення 241 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1062.89 грн
2+707.70 грн
4+669.61 грн
В кошику  од. на суму  грн.
IXYN150N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB8C89CC895820&compId=IXYN150N60B3.pdf?ci_sign=2b81f77306a9a614cab35e665551c8d81a0f0fd4
IXYN150N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 830W
Case: SOT227B
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 140A
Semiconductor structure: single transistor
Pulsed collector current: 750A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXYA20N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1601610FD9820&compId=IXYA(H)20N65C3.pdf?ci_sign=622839bec752ab1a386c7b6ee51037b152aed90c
IXYA20N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYA20N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA190856D398BF&compId=IXY_20N65C3D1.pdf?ci_sign=fe6215c9611b11121eb070e7e1585269872ac75f
IXYA20N65C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
на замовлення 141 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+242.65 грн
3+202.31 грн
6+176.92 грн
15+167.40 грн
50+161.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYH20N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1601610FD9820&compId=IXYA(H)20N65C3.pdf?ci_sign=622839bec752ab1a386c7b6ee51037b152aed90c
IXYH20N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYP20N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA190856D398BF&compId=IXY_20N65C3D1.pdf?ci_sign=fe6215c9611b11121eb070e7e1585269872ac75f
IXYP20N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
на замовлення 287 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+320.40 грн
7+149.95 грн
18+141.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYP20N65C3D1M pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE410F543879820&compId=IXYP20N65C3D1M.pdf?ci_sign=1947662e3b6d9a26d26a809238c9086d39d68c63
IXYP20N65C3D1M
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFK120N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB63306F97D8BF&compId=IXFK120N65X2_IXFX120N65X2.pdf?ci_sign=0c1bd7c19c3aa665ef6e1d8149c6a814e49a737a
IXFK120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 220ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFX120N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB63306F97D8BF&compId=IXFK120N65X2_IXFX120N65X2.pdf?ci_sign=0c1bd7c19c3aa665ef6e1d8149c6a814e49a737a
IXFX120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 240nC
Reverse recovery time: 220ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTK120N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB29CD38EED8BF&compId=IXT_120N65X2.pdf?ci_sign=ba45e36110c138614c3f7686f328897e9b74d68c
IXTK120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 230nC
Reverse recovery time: 505ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTX120N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB29CD38EED8BF&compId=IXT_120N65X2.pdf?ci_sign=ba45e36110c138614c3f7686f328897e9b74d68c
IXTX120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PLUS247™
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Gate charge: 230nC
Reverse recovery time: 505ns
On-state resistance: 23mΩ
Power dissipation: 1.25kW
товару немає в наявності
В кошику  од. на суму  грн.
IXTK120N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF910BFD6664FE27&compId=IXTK120N25P-DTE.pdf?ci_sign=9477a8a3509209b374b486a84ef243ec93f2a551
IXTK120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Technology: Polar™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Power dissipation: 700W
на замовлення 105 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1103.05 грн
2+839.40 грн
4+793.38 грн
25+787.04 грн
50+762.44 грн
В кошику  од. на суму  грн.
IXFR24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2857DA3FF1A1820&compId=IXFR24N80P.pdf?ci_sign=873856e0e863a27e19dde25c672bc74899b0f721
IXFR24N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+861.25 грн
2+626.77 грн
3+625.98 грн
5+591.86 грн
В кошику  од. на суму  грн.
IXFX34N80 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0
IXFX34N80
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFX44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d
IXFX44N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
CPC1972G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77
CPC1972G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+99.97 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXTP08N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47
IXTP08N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+247.78 грн
9+115.83 грн
23+109.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP44N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf
IXFP44N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: THT
Power dissipation: 240W
Pulsed drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: HiPerFET™; X3-Class
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 33nC
Reverse recovery time: 87ns
On-state resistance: 40mΩ
Drain current: 44A
товару немає в наявності
В кошику  од. на суму  грн.
IXTT64N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CE00FFAAFE27&compId=IXTQ64N25P-DTE.pdf?ci_sign=8629d9d38dc4d997f8392b5cabb1618306ba9fab
IXTT64N25P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO268
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
товару немає в наявності
В кошику  од. на суму  грн.
CPC1394GR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320045E0C7&compId=CPC1394.pdf?ci_sign=d7d0c6af5a4e35ec08801baf972a55daaba17e76
CPC1394GR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 40Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Turn-on time: 5ms
Kind of output: MOSFET
на замовлення 536 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+229.84 грн
8+121.39 грн
22+115.04 грн
500+112.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1394GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320045E0C7&compId=CPC1394.pdf?ci_sign=d7d0c6af5a4e35ec08801baf972a55daaba17e76
CPC1394GV
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-off time: 3ms
Turn-on time: 5ms
On-state resistance: 40Ω
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Kind of output: MOSFET
на замовлення 452 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+229.84 грн
8+121.39 грн
22+115.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK78N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D410DC139CF820&compId=IXFK(X)78N50P3.pdf?ci_sign=5f610dbd75428f65aab0cd1f86573c38c778a434
IXFK78N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1096.21 грн
2+744.19 грн
4+702.94 грн
В кошику  од. на суму  грн.
IXFK98N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35AB462127820&compId=IXFK(X)98N50P3.pdf?ci_sign=503a48a7a9f46ebf3b6b7f092e5d7520b9bd3c32
IXFK98N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFX78N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D410DC139CF820&compId=IXFK(X)78N50P3.pdf?ci_sign=5f610dbd75428f65aab0cd1f86573c38c778a434
IXFX78N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFX98N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35AB462127820&compId=IXFK(X)98N50P3.pdf?ci_sign=503a48a7a9f46ebf3b6b7f092e5d7520b9bd3c32
IXFX98N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1269.66 грн
2+917.15 грн
3+867.17 грн
В кошику  од. на суму  грн.
DSB15IM45IB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9DE16ECF1B8BF&compId=DSB15IM45IB.pdf?ci_sign=111fdfb47a0ed9e4fcc4c5a565d872868ea000e5
DSB15IM45IB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.55V; 70W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: TO262
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
на замовлення 494 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.34 грн
17+24.04 грн
18+23.33 грн
50+22.61 грн
109+22.29 грн
250+21.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
IXFN210N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF91C31173D1820&compId=IXFN210N30P3.pdf?ci_sign=822d8ac666dc943cca774a0528aebea732c66ae7
IXFN210N30P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 268nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2719.59 грн
В кошику  од. на суму  грн.
MCMA35PD1600TB pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8104FC036B00C4&compId=MCMA35PD1600TB.pdf?ci_sign=55ae504df2d82c6c04ccd8c02f974e8b0f361824 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCMA35PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.22V
Load current: 35A
Max. load current: 55A
Max. forward impulse current: 520A
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1537.94 грн
В кошику  од. на суму  грн.
MCD132-08io1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B8ECB0EE1D388143&compId=MCD132-08io1.pdf?ci_sign=4343034c745f825e4fdd0005efd4f09ce7a057f3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
товару немає в наявності
В кошику  од. на суму  грн.
IXFH16N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca
IXFH16N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT16N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBE3876A2C78BF&compId=IXFH16N80P.pdf?ci_sign=d439feac37a891fbe96fd8303945e86c880ee0ca
IXFT16N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFX27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFX27N80Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1472.15 грн
2+1292.42 грн
30+1281.31 грн
В кошику  од. на суму  грн.
IXFH10N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECCF1314CB18BF&compId=IXFH10N100P.pdf?ci_sign=7f7b7c35add8447660ce7a497e76d475f7220bfa
IXFH10N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 300ns
On-state resistance: 1.4Ω
Drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 380W
Drain-source voltage: 1kV
на замовлення 328 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+545.97 грн
3+388.76 грн
7+368.13 грн
30+359.40 грн
В кошику  од. на суму  грн.
IXTP05N100M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B495AF820&compId=IXTP05N100M.pdf?ci_sign=22dedd1505f2893fd7c4f30fd914ac61d85a74fc
IXTP05N100M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYA50N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a
IXYA50N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXYH50N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a
IXYH50N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXYH50N65C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA99A964DD41820&compId=IXYH50N65C3D1.pdf?ci_sign=db15a784f69e2c7f93edb1f3c8b2b0b8e36ac44c
IXYH50N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXYP50N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9C092733F78BF&compId=IXY_50N65C3.pdf?ci_sign=9e5ac7cc0270dee769cf17451458be3d02b0bb9a
IXYP50N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTX120P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25
IXTX120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1778.03 грн
2+1560.58 грн
10+1500.29 грн
В кошику  од. на суму  грн.
IXGX320N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FAC0877D7820&compId=IXGK(x)320N60B3.pdf?ci_sign=7f3fb659fb9326cceb8b246edbd061c9df14d441
IXGX320N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1648.16 грн
В кошику  од. на суму  грн.
IXFA34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C1609820&compId=IXFA34N65X2.pdf?ci_sign=2925d4e0e806409ff82e30397fb37dc4d7cc660b
IXFA34N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику  од. на суму  грн.
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