Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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CPC1010NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Contacts configuration: SPST-NO Insulation voltage: 1.5kV Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm Turn-off time: 3ms Turn-on time: 3ms Control current max.: 50mA On-state resistance: 11.5Ω Case: SOP4 Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC3730CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89 Mounting: SMD Gate-source voltage: ±15V Power dissipation: 1.4W Drain-source voltage: 350V Drain current: 0.14A On-state resistance: 35Ω Type of transistor: N-MOSFET Case: SOT89 Polarisation: unipolar Kind of package: reel; tape Kind of channel: depletion |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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CPC1563G | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2ms Turn-off time: 2ms |
на замовлення 338 шт: термін постачання 21-30 дні (днів) |
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PLA194 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC On-state resistance: 35Ω Turn-on time: 3ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Contacts configuration: SPST-NO Max. operating current: 0.13A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 600V AC; max. 600V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Case: DIP6 |
на замовлення 248 шт: термін постачання 21-30 дні (днів) |
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LCB111 | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC On-state resistance: 35Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Case: DIP6 |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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LCA210S | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω On-state resistance: 35Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 85mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 100mA Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Case: DIP8 |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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LCB111S | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC On-state resistance: 35Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Case: DIP6 |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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LCA210 | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω On-state resistance: 35Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 85mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 100mA Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Case: DIP8 |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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LCA182 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC On-state resistance: 35Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Case: DIP6 |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IXTP3N120 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns Reverse recovery time: 700ns Drain-source voltage: 1.2kV Drain current: 3A On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 200W Polarisation: unipolar Kind of package: tube Gate charge: 42nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220AB |
на замовлення 298 шт: термін постачання 21-30 дні (днів) |
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CPC1303GR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4 Mounting: SMD Case: SO4 Turn-on time: 2µs Turn-off time: 8µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-2500%@0.2mA Type of optocoupler: optocoupler |
на замовлення 448 шт: термін постачання 21-30 дні (днів) |
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CPC1303GRTR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4 Mounting: SMD Case: SO4 Turn-on time: 2µs Turn-off time: 8µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-2500%@0.2mA Type of optocoupler: optocoupler |
на замовлення 997 шт: термін постачання 21-30 дні (днів) |
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CPC1330GR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Operating temperature: -40...85°C Case: DIP4 On-state resistance: 30Ω Turn-on time: 2ms Turn-off time: 1ms Body dimensions: 4.57x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 5kV Contacts configuration: SPST-NO Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IXFL210N30P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 108A Power dissipation: 520W Case: ISOPLUS264™ On-state resistance: 16mΩ Mounting: THT Gate charge: 268nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFH120N15P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO247-3 On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ |
на замовлення 223 шт: термін постачання 21-30 дні (днів) |
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IXFQ80N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 80A Power dissipation: 390W Case: TO3P Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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MIXA40WB1200TED | IXYS |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 105A Application: motors; photovoltaics Power dissipation: 195W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: E2-Pack |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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VUB145-16NOXT | IXYS |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W Case: E2-Pack Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 140A Pulsed collector current: 300A Application: Inverter Power dissipation: 500W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: X2PT Topology: buck chopper; NTC thermistor; three-phase diode bridge |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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VUB160-16NOXT | IXYS |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W Case: V2-Pack Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 175A Pulsed collector current: 450A Application: Inverter Power dissipation: 695W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: X2PT Topology: buck chopper; NTC thermistor; three-phase diode bridge |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXBOD1-38R | IXYS |
![]() Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV Mounting: THT Case: BOD Kind of package: bulk Max. load current: 0.7A Breakover voltage: 3.8kV Type of thyristor: BOD x4 |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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CPC1020NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Switched voltage: max. 30V AC; max. 30V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Contacts configuration: SPST-NO Insulation voltage: 1.5kV Max. operating current: 1.2A Type of relay: solid state Relay variant: current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm Turn-off time: 3ms Turn-on time: 3ms Control current max.: 50mA On-state resistance: 0.25Ω Case: SOP4 Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
UGB3132AD | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 4.8kV; If: 1.3A; Ifsm: 60A Max. off-state voltage: 4.8kV Load current: 1.3A Max. forward impulse current: 60A Electrical mounting: THT Mechanical mounting: screw Version: module Case: UGB1 Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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LF2104NTR | IXYS |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 10...20V Voltage class: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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GBO25-12NO1 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A Max. off-state voltage: 1.2kV Load current: 25A Max. forward impulse current: 370A Kind of package: tube Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase Case: GBFP Leads: flat pin |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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VBO25-12NO2 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Max. off-state voltage: 1.2kV Load current: 38A Max. forward impulse current: 370A Kind of package: bulk Electrical mounting: THT Version: square Type of bridge rectifier: single-phase Case: FO-A Leads: connectors FASTON |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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DSP25-12AT-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Max. off-state voltage: 1.2kV Max. forward voltage: 1.16V Load current: 25A Semiconductor structure: double series Max. forward impulse current: 0.3kA Power dissipation: 160W Type of diode: rectifying Mounting: SMD Case: D3PAK |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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CPC1025NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Switched voltage: max. 400V AC; max. 400V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Contacts configuration: SPST-NO Insulation voltage: 1.5kV Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm Turn-off time: 1ms Turn-on time: 2ms Control current max.: 50mA On-state resistance: 30Ω Case: SOP4 Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1019NTR | IXYS |
![]() Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C Type of relay: solid state Max. operating current: 750mA Switched voltage: max. 60V DC Mounting: SMT Case: SOP4 Manufacturer series: OptoMOS Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Contacts configuration: SPST-NO On-state resistance: 0.6Ω Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 1.5kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1004NTR | IXYS |
![]() Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV Operating temperature: -40...110°C Case: SOP4 On-state resistance: 4Ω Turn-on time: 3ms Turn-off time: 1ms Body dimensions: 4.09x3.81x2.03mm Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO Max. operating current: 300mA Type of relay: solid state Relay variant: current source Switched voltage: max. 100V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1009NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Operating temperature: -40...85°C Case: SOP4 On-state resistance: 8Ω Turn-on time: 2ms Turn-off time: 0.5ms Body dimensions: 4.09x3.81x2.03mm Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO Max. operating current: 150mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 100V AC; max. 100V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1030NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1001NTR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C Operating temperature: -40...85°C Case: SOP4 Turn-on time: 1µs Turn-off time: 30µs Number of channels: 1 Kind of output: transistor Insulation voltage: 1.5kV CTR@If: 100-800%@0.2mA Max. operating current: 0.1A Switched voltage: max. 30V DC Control current max.: 5mA Type of optocoupler: optocoupler Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1006NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Operating temperature: -40...85°C Case: SOP4 On-state resistance: 10Ω Turn-on time: 10ms Turn-off time: 10ms Body dimensions: 4.09x3.81x2.03mm Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO Max. operating current: 75mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Manufacturer series: OptoMOS Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFN400N15X3 | IXYS |
![]() Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 150V Drain current: 400A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 2.5mΩ Pulsed drain current: 900A Power dissipation: 695W Technology: HiPerFET™; X3-Class Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 132ns Gate charge: 365nC Kind of channel: enhancement |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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MUBW25-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A Collector current: 21A Power dissipation: 100W Case: E1-Pack Gate-emitter voltage: ±20V Pulsed collector current: 40A Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Application: motors Electrical mounting: Press-in PCB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXFX250N10P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 250A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.5mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSEP60-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 Max. forward voltage: 1.81V Power dissipation: 330W Reverse recovery time: 40ns Technology: HiPerFRED™ |
на замовлення 255 шт: термін постачання 21-30 дні (днів) |
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DSEP60-12AR | IXYS |
![]() ![]() Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: ISOPLUS247™ Max. forward voltage: 2.66V Power dissipation: 230W Reverse recovery time: 40ns Technology: HiPerFRED™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTQ50N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO3P On-state resistance: 50mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 166ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXDI614CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Kind of output: inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Supply voltage: 4.5...35V Turn-on time: 140ns Turn-off time: 130ns Output current: -14...14A |
на замовлення 773 шт: термін постачання 21-30 дні (днів) |
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IXDN609CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 1092 шт: термін постачання 21-30 дні (днів) |
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IXDN630MCI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Supply voltage: 9...35V Turn-on time: 135ns Turn-off time: 135ns Output current: -30...30A |
на замовлення 127 шт: термін постачання 21-30 дні (днів) |
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IXDD630CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Supply voltage: 12.5...35V Turn-on time: 135ns Turn-off time: 135ns Output current: -30...30A |
на замовлення 219 шт: термін постачання 21-30 дні (днів) |
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IXDD614CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 874 шт: термін постачання 21-30 дні (днів) |
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IXDI609CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 796 шт: термін постачання 21-30 дні (днів) |
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IXDI630MCI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Kind of output: inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Supply voltage: 12.5...35V Turn-on time: 135ns Turn-off time: 135ns Output current: -30...30A |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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LCC110P | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Turn-on time: 4ms Insulation voltage: 3.75kV On-state resistance: 35Ω Contacts configuration: SPDT Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Manufacturer series: OptoMOS Turn-off time: 4ms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
LCC110PTR | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Turn-on time: 4ms Insulation voltage: 3.75kV On-state resistance: 35Ω Contacts configuration: SPDT Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Manufacturer series: OptoMOS Turn-off time: 4ms |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
LCC110STR | IXYS |
![]() Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Turn-on time: 4ms Insulation voltage: 3.75kV On-state resistance: 35Ω Contacts configuration: SPDT Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Operating temperature: -40...85°C Control current max.: 50mA Manufacturer series: OptoMOS Turn-off time: 4ms |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CPC1706Y | IXYS |
![]() Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C Type of relay: solid state Control current max.: 50mA Max. operating current: 4A Switched voltage: max. 60V DC Relay variant: current source Mounting: THT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Kind of output: MOSFET Turn-off time: 2ms Turn-on time: 5ms On-state resistance: 90mΩ Contacts configuration: SPST-NO Manufacturer series: OptoMOS |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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DPG30I400HA | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 360A Case: TO247-2 Max. forward voltage: 1.13V Reverse recovery time: 45ns Technology: HiPerFRED™ 2nd Gen Power dissipation: 160W |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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DPG60C400HB | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W Mounting: THT Max. forward impulse current: 360A Power dissipation: 160W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO247-3 Max. off-state voltage: 0.4kV Max. forward voltage: 1.41V Load current: 30A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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DSEI2X31-04C | IXYS |
![]() Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw Max. off-state voltage: 0.4kV Load current: 30A x2 Semiconductor structure: double independent Max. forward impulse current: 0.3kA Case: SOT227B Max. forward voltage: 1.4V Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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IXTP12N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC Technology: Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Reverse recovery time: 300ns Drain-source voltage: 500V Drain current: 12A On-state resistance: 0.5Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFP12N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC Kind of channel: enhancement Drain-source voltage: 500V Drain current: 12A On-state resistance: 0.5Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA12N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 29nC Technology: Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Reverse recovery time: 300ns Drain-source voltage: 500V Drain current: 12A On-state resistance: 0.5Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
MIXG330PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Case: SimBus F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MIXG330PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Case: SimBus F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DH20-18A | IXYS |
![]() Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.8kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 150A Kind of package: tube Power dissipation: 140W Features of semiconductor devices: fast switching Max. forward voltage: 2.35V Reverse recovery time: 300ns |
на замовлення 489 шт: термін постачання 21-30 дні (днів) |
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IX4428NTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Case: SO8 Supply voltage: 4.5...35V Output current: -1.5...1.5A Type of integrated circuit: driver Number of channels: 2 Kind of output: inverting; non-inverting Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. |
CPC1010NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Case: SOP4
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Case: SOP4
Mounting: SMT
товару немає в наявності
В кошику
од. на суму грн.
CPC3730CTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Mounting: SMD
Gate-source voltage: ±15V
Power dissipation: 1.4W
Drain-source voltage: 350V
Drain current: 0.14A
On-state resistance: 35Ω
Type of transistor: N-MOSFET
Case: SOT89
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Mounting: SMD
Gate-source voltage: ±15V
Power dissipation: 1.4W
Drain-source voltage: 350V
Drain current: 0.14A
On-state resistance: 35Ω
Type of transistor: N-MOSFET
Case: SOT89
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.60 грн |
10+ | 37.67 грн |
CPC1563G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
на замовлення 338 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 339.71 грн |
6+ | 151.00 грн |
17+ | 142.77 грн |
PLA194 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 0.13A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 0.13A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
на замовлення 248 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 355.00 грн |
6+ | 157.72 грн |
16+ | 149.50 грн |
LCB111 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 229.42 грн |
7+ | 136.04 грн |
19+ | 128.57 грн |
LCA210S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 85mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 85mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP8
на замовлення 93 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 436.31 грн |
5+ | 194.35 грн |
13+ | 183.88 грн |
LCB111S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
на замовлення 81 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.52 грн |
7+ | 136.79 грн |
18+ | 129.32 грн |
LCA210 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 85mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 85mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
на замовлення 45 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 265.65 грн |
5+ | 194.35 грн |
13+ | 183.88 грн |
LCA182 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 190.78 грн |
8+ | 117.36 грн |
21+ | 111.38 грн |
IXTP3N120 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Reverse recovery time: 700ns
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Reverse recovery time: 700ns
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
на замовлення 298 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 544.98 грн |
3+ | 382.72 грн |
7+ | 361.79 грн |
250+ | 347.59 грн |
CPC1303GR |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4
Mounting: SMD
Case: SO4
Turn-on time: 2µs
Turn-off time: 8µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-2500%@0.2mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4
Mounting: SMD
Case: SO4
Turn-on time: 2µs
Turn-off time: 8µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-2500%@0.2mA
Type of optocoupler: optocoupler
на замовлення 448 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 116.72 грн |
10+ | 73.26 грн |
15+ | 58.30 грн |
41+ | 55.32 грн |
CPC1303GRTR |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4
Mounting: SMD
Case: SO4
Turn-on time: 2µs
Turn-off time: 8µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-2500%@0.2mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4
Mounting: SMD
Case: SO4
Turn-on time: 2µs
Turn-off time: 8µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-2500%@0.2mA
Type of optocoupler: optocoupler
на замовлення 997 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 132.82 грн |
10+ | 85.22 грн |
16+ | 58.30 грн |
42+ | 54.57 грн |
CPC1330GR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Operating temperature: -40...85°C
Case: DIP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Operating temperature: -40...85°C
Case: DIP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.57x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 97.40 грн |
IXFL210N30P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1999.62 грн |
IXFH120N15P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
на замовлення 223 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 664.93 грн |
3+ | 428.32 грн |
6+ | 405.14 грн |
120+ | 389.45 грн |
IXFQ80N25X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 902.40 грн |
2+ | 603.98 грн |
5+ | 571.09 грн |
MIXA40WB1200TED |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 105A
Application: motors; photovoltaics
Power dissipation: 195W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: E2-Pack
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 105A
Application: motors; photovoltaics
Power dissipation: 195W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: E2-Pack
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 5333.12 грн |
VUB145-16NOXT |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Case: E2-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Application: Inverter
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Case: E2-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Application: Inverter
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: buck chopper; NTC thermistor; three-phase diode bridge
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 6856.18 грн |
VUB160-16NOXT |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Case: V2-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 450A
Application: Inverter
Power dissipation: 695W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Case: V2-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 450A
Application: Inverter
Power dissipation: 695W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: buck chopper; NTC thermistor; three-phase diode bridge
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 6522.92 грн |
IXBOD1-38R |
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Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Mounting: THT
Case: BOD
Kind of package: bulk
Max. load current: 0.7A
Breakover voltage: 3.8kV
Type of thyristor: BOD x4
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Mounting: THT
Case: BOD
Kind of package: bulk
Max. load current: 0.7A
Breakover voltage: 3.8kV
Type of thyristor: BOD x4
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 6530.16 грн |
CPC1020NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 1.2A
Type of relay: solid state
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Case: SOP4
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 1.2A
Type of relay: solid state
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Case: SOP4
Mounting: SMT
товару немає в наявності
В кошику
од. на суму грн.
UGB3132AD |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 4.8kV; If: 1.3A; Ifsm: 60A
Max. off-state voltage: 4.8kV
Load current: 1.3A
Max. forward impulse current: 60A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: UGB1
Type of bridge rectifier: single-phase
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 4.8kV; If: 1.3A; Ifsm: 60A
Max. off-state voltage: 4.8kV
Load current: 1.3A
Max. forward impulse current: 60A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: UGB1
Type of bridge rectifier: single-phase
товару немає в наявності
В кошику
од. на суму грн.
LF2104NTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
В кошику
од. на суму грн.
GBO25-12NO1 |
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Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
Leads: flat pin
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 726.92 грн |
2+ | 598.75 грн |
5+ | 565.86 грн |
VBO25-12NO2 |
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Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: FO-A
Leads: connectors FASTON
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: FO-A
Leads: connectors FASTON
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1403.92 грн |
2+ | 1233.38 грн |
10+ | 1232.63 грн |
DSP25-12AT-TUB |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.16V
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Type of diode: rectifying
Mounting: SMD
Case: D3PAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.16V
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Type of diode: rectifying
Mounting: SMD
Case: D3PAK
на замовлення 42 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 545.79 грн |
3+ | 363.28 грн |
7+ | 343.85 грн |
CPC1025NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 30Ω
Case: SOP4
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 30Ω
Case: SOP4
Mounting: SMT
товару немає в наявності
В кошику
од. на суму грн.
CPC1019NTR |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Contacts configuration: SPST-NO
On-state resistance: 0.6Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Contacts configuration: SPST-NO
On-state resistance: 0.6Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
товару немає в наявності
В кошику
од. на суму грн.
CPC1004NTR |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Operating temperature: -40...110°C
Case: SOP4
On-state resistance: 4Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 300mA
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Operating temperature: -40...110°C
Case: SOP4
On-state resistance: 4Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 300mA
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
товару немає в наявності
В кошику
од. на суму грн.
CPC1009NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Operating temperature: -40...85°C
Case: SOP4
On-state resistance: 8Ω
Turn-on time: 2ms
Turn-off time: 0.5ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Operating temperature: -40...85°C
Case: SOP4
On-state resistance: 8Ω
Turn-on time: 2ms
Turn-off time: 0.5ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
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CPC1030NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
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CPC1001NTR |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Operating temperature: -40...85°C
Case: SOP4
Turn-on time: 1µs
Turn-off time: 30µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 100-800%@0.2mA
Max. operating current: 0.1A
Switched voltage: max. 30V DC
Control current max.: 5mA
Type of optocoupler: optocoupler
Mounting: SMD
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Operating temperature: -40...85°C
Case: SOP4
Turn-on time: 1µs
Turn-off time: 30µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 100-800%@0.2mA
Max. operating current: 0.1A
Switched voltage: max. 30V DC
Control current max.: 5mA
Type of optocoupler: optocoupler
Mounting: SMD
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CPC1006NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Operating temperature: -40...85°C
Case: SOP4
On-state resistance: 10Ω
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 75mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Operating temperature: -40...85°C
Case: SOP4
On-state resistance: 10Ω
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 75mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
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IXFN400N15X3 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.5mΩ
Pulsed drain current: 900A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 132ns
Gate charge: 365nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.5mΩ
Pulsed drain current: 900A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 132ns
Gate charge: 365nC
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 2955.96 грн |
MUBW25-06A6K |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Application: motors
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Application: motors
Electrical mounting: Press-in PCB
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IXFX250N10P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
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DSEP60-12A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 255 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 701.96 грн |
2+ | 467.19 грн |
6+ | 441.77 грн |
DSEP60-12AR | ![]() |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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IXTQ50N25T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
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IXDI614CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
на замовлення 773 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 334.08 грн |
3+ | 274.33 грн |
4+ | 247.42 грн |
10+ | 233.97 грн |
50+ | 229.48 грн |
250+ | 224.25 грн |
IXDN609CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1092 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 267.26 грн |
6+ | 153.24 грн |
16+ | 145.02 грн |
100+ | 140.53 грн |
250+ | 139.04 грн |
IXDN630MCI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 9...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 9...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
на замовлення 127 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 625.48 грн |
2+ | 450.00 грн |
6+ | 425.33 грн |
50+ | 408.88 грн |
IXDD630CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 12.5...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 12.5...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
на замовлення 219 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 628.70 грн |
2+ | 450.00 грн |
6+ | 425.33 грн |
IXDD614CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 874 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 334.08 грн |
4+ | 228.74 грн |
11+ | 216.78 грн |
250+ | 207.80 грн |
IXDI609CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 796 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 327.64 грн |
6+ | 160.71 грн |
10+ | 159.96 грн |
15+ | 151.74 грн |
100+ | 145.76 грн |
IXDI630MCI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 12.5...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Kind of output: inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 12.5...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -30...30A
на замовлення 209 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 566.72 грн |
2+ | 444.02 грн |
6+ | 419.35 грн |
10+ | 417.85 грн |
50+ | 403.65 грн |
LCC110P |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
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LCC110PTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
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LCC110STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 4ms
Insulation voltage: 3.75kV
On-state resistance: 35Ω
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Operating temperature: -40...85°C
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-off time: 4ms
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CPC1706Y |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 90mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; -40÷85°C
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
On-state resistance: 90mΩ
Contacts configuration: SPST-NO
Manufacturer series: OptoMOS
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 275.31 грн |
6+ | 159.96 грн |
DPG30I400HA |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-2
Max. forward voltage: 1.13V
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
Power dissipation: 160W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-2
Max. forward voltage: 1.13V
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
Power dissipation: 160W
на замовлення 37 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 236.67 грн |
3+ | 197.34 грн |
6+ | 156.98 грн |
16+ | 148.75 грн |
DPG60C400HB |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Mounting: THT
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.41V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Mounting: THT
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.41V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 466.90 грн |
3+ | 291.52 грн |
9+ | 275.83 грн |
DSEI2X31-04C |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Case: SOT227B
Max. forward voltage: 1.4V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Case: SOT227B
Max. forward voltage: 1.4V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1759.73 грн |
2+ | 1545.08 грн |
IXTP12N50P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
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IXFP12N50P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhancement
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
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IXTA12N50P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 500V
Drain current: 12A
On-state resistance: 0.5Ω
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MIXG330PF1200PTSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Case: SimBus F
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Case: SimBus F
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MIXG330PF1200TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Case: SimBus F
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Case: SimBus F
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DH20-18A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Power dissipation: 140W
Features of semiconductor devices: fast switching
Max. forward voltage: 2.35V
Reverse recovery time: 300ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Power dissipation: 140W
Features of semiconductor devices: fast switching
Max. forward voltage: 2.35V
Reverse recovery time: 300ns
на замовлення 489 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 390.42 грн |
4+ | 254.15 грн |
10+ | 240.70 грн |
120+ | 234.72 грн |
IX4428NTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
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од. на суму грн.