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IXBH24N170 IXBH24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 230A
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 190ns
Gate charge: 0.14µC
Turn-off time: 1285ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1540.50 грн
В кошику  од. на суму  грн.
IXDD604PI IXDD604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
4+130.72 грн
10+88.86 грн
12+84.10 грн
31+79.34 грн
50+78.54 грн
100+76.16 грн
Мінімальне замовлення: 4
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IXDD604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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MMIX1T600N04T2
+1
 		MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Technology: GigaMOS™; TrenchT2™
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2324.85 грн
2+2041.37 грн
20+1982.66 грн
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IXFH30N50P IXFH30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
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IXFH30N50Q3 IXFH30N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
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IXTQ30N50L IXTQ30N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50L IXTT30N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50P IXTT30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTH30N50L2 IXTH30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXFT30N50P IXFT30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFT30N50Q3 IXFT30N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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IXTH30N50P IXTH30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTQ30N50L2 IXTQ30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ30N50P IXTQ30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTT30N50L2 IXTT30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTY14N60X2 IXTY14N60X2 IXYS IXTY14N60X2_DS_1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
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LBA716S LBA716S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4F258929B38BF&compId=lba716.pdf?ci_sign=d45d468b46d147689665005b9ee4dfd3cf1d6094 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
1+577.58 грн
3+399.86 грн
7+378.44 грн
100+362.58 грн
В кошику  од. на суму  грн.
LBA716 LBA716 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+463.09 грн
3+399.07 грн
7+376.86 грн
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MDD142-16N1 MDD142-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E076A735FF9E28&compId=MDD142-16N1-DTE.pdf?ci_sign=b81a928fa52fbbec2ea352c4ce2044d25f13adb9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+3696.19 грн
В кошику  од. на суму  грн.
DMA150YC1600NA DMA150YC1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2EE937A7E0CE&compId=DMA150YC1600NA.pdf?ci_sign=eb9d0cd237fe04937e9b7f93c2a2703efc0afafc Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 700A
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common cathode
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DMA150YA1600NA DMA150YA1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2D437F59C0CE&compId=DMA150YA1600NA.pdf?ci_sign=981018eb9fe457baa6e6553f151d3e4298168dcd Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common anode
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CPC1966Y CPC1966Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98FCB3ADB02BCF8BF&compId=CPC1966.pdf?ci_sign=d8a0ffe0b0c10a0b312f6bc7b4d31fd7f4a4bc52 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 3A
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 240V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 627 шт:
термін постачання 21-30 дні (днів)
2+413.54 грн
5+227.70 грн
12+215.01 грн
Мінімальне замовлення: 2
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DSEI120-12A DSEI120-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B98284067443E143&compId=dsei120-12a.pdf?ci_sign=6a60535cc3c98501893d4b09a81381b32c83ed3d description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
на замовлення 248 шт:
термін постачання 21-30 дні (днів)
1+886.88 грн
2+764.03 грн
4+721.98 грн
10+706.11 грн
30+694.21 грн
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DSEI120-12AZ-TUB DSEI120-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4B274AB88A0C4&compId=DSEI120-12AZ.pdf?ci_sign=05a92d3aa13572b2603654c465e7fd024cf02c7a Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO268AAHV
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1031.28 грн
2+767.99 грн
4+725.94 грн
30+698.18 грн
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IXTY1N120P IXTY1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
3+176.01 грн
5+146.78 грн
7+134.88 грн
19+127.73 грн
70+122.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP2R4N120P IXTP2R4N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
на замовлення 307 шт:
термін постачання 21-30 дні (днів)
1+468.22 грн
4+295.14 грн
9+278.48 грн
250+268.16 грн
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MCC200-14io1 MCC200-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA1C22EF4718520D6&compId=MCC200-14io1.pdf?ci_sign=30e8433f322486eb978085c608c43a3034c71d17 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+6238.06 грн
В кошику  од. на суму  грн.
MCC200-18io1 MCC200-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF2578EE46615EA&compId=MCC200-18IO1.pdf?ci_sign=9cebf59deee12ac16ee0b117dec34e4e5e3553ef pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+6757.54 грн
В кошику  од. на суму  грн.
VGO36-16IO7 VGO36-16IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6236239A8C0C4&compId=VGO36-16io7.pdf?ci_sign=f9fb0bce59b8ae8122be8b955a3f251a5e31da08 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Gate current: 65mA
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
1+1347.41 грн
3+1182.93 грн
10+1134.54 грн
В кошику  од. на суму  грн.
CPC5620A CPC5620A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EF6508D1A3FE745&compId=CPC5620_21.pdf?ci_sign=87f123f955bcf1144c1b242dd30525007807a0aa Category: Interfaces others - integrated circuits
Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube
Type of integrated circuit: phone line interface
Supply voltage: 2.8...5.5V DC
Interface: PLI
Mounting: SMD
Case: SO32
Integrated circuit features: galvanically isolated
Kind of package: tube
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IXYH60N90C3 IXYH60N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB24A40B479820&compId=IXYH60N90C3.pdf?ci_sign=57fc15f8e17396bfde6a9654fad8ffe22b1c18b7 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 104ns
Turn-off time: 268ns
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 310A
на замовлення 307 шт:
термін постачання 21-30 дні (днів)
1+830.49 грн
2+480.00 грн
6+453.81 грн
120+449.85 грн
В кошику  од. на суму  грн.
IXFT14N80P IXFT14N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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IXTP140N12T2 IXTP140N12T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
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MEO450-12DA MEO450-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 453A; Y4-M6; Ufmax: 1.76V
Type of semiconductor module: diode
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 1.76V
Load current: 453A
Max. forward impulse current: 4.8kA
Max. off-state voltage: 1.2kV
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+5775.82 грн
В кошику  од. на суму  грн.
MCO150-12IO1 MCO150-12IO1 IXYS littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+2830.67 грн
В кошику  од. на суму  грн.
IXFP14N60P IXFP14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXTQ14N60P IXTQ14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXFA14N60P IXFA14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFH14N60P IXFH14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXTA14N60P IXTA14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXTP14N60P IXTP14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXTP14N60PM IXTP14N60PM IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1339820&compId=IXTP14N60PM.pdf?ci_sign=fe79afdb307ca615dc69964670973d4c6149b61e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXTP80N10T IXTP80N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
2+234.11 грн
7+148.36 грн
18+140.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA80N10T IXTA80N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTA180N10T IXTA180N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+443.44 грн
4+264.99 грн
10+250.71 грн
25+246.74 грн
50+240.39 грн
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IXTP180N10T IXTP180N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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CPC1972GS CPC1972GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
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CPC1972GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
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FUO22-12N FUO22-12N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F55DC0A59378BF&compId=FUO22-12N.pdf?ci_sign=ff71e9cc4948b645864c0457bca1ed4e0808aba6 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Type of bridge rectifier: three-phase
Max. forward voltage: 1.2V
Load current: 30A
Max. forward impulse current: 150A
Max. off-state voltage: 1.2kV
на замовлення 246 шт:
термін постачання 21-30 дні (днів)
1+1113.30 грн
3+977.45 грн
10+939.36 грн
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IXFN132N50P3 IXFN132N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF964F62AE6B820&compId=IXFN132N50P3.pdf?ci_sign=3d53e2e7d5a8766b34ef8c5d8db2b89f63097539 Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
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IXFB132N50P3 IXFB132N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4611EE4E6AA18&compId=IXFB132N50P3.pdf?ci_sign=5f657928f29000d858e2b0c3da93947744b88203 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
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IXFL132N50P3 IXFL132N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94FFC40FB820&compId=IXFL132N50P3.pdf?ci_sign=85792c6dcf977ebf78032c427263cc5303138c45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
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DSEI2X61-06C DSEI2X61-06C IXYS pVersion=0046&contRep=ZT&docId=E291FD18AE0956F19A99005056AB752F&compId=96508.pdf?ci_sign=fe3ba4231a432602470235eb4879bc415d83b33a Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
1+1892.52 грн
2+1662.14 грн
5+1597.87 грн
В кошику  од. на суму  грн.
CPC1984Y CPC1984Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493853439C0C7&compId=CPC1984Y.pdf?ci_sign=c4456eb49faad16e3d4dbbc32458cf0e8e594af7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 1A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.66Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 4kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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MCC44-16io1B MCC44-16io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D60D0D8B85E27&compId=MCC44-16IO1B-DTE.pdf?ci_sign=ea286ae49b04ba3e975ed8e5bf2e0596849d9d2c pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Mechanical mounting: screw
Electrical mounting: screw
Case: TO240AA
Type of semiconductor module: thyristor
Gate current: 100/200mA
Max. forward voltage: 1.34V
Load current: 49A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2077.08 грн
2+1823.99 грн
В кошику  од. на суму  грн.
IXTQ69N30P IXTQ69N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D131A4635E27&compId=IXTQ69N30P-DTE.pdf?ci_sign=30ac47e4c9ca5a13d0405042e859205ebf2f7209 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: Polar™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Gate charge: 156nC
Reverse recovery time: 330ns
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 300V
Power dissipation: 500W
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IXFH320N10T2 IXFH320N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Case: TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Reverse recovery time: 98ns
Gate charge: 430nC
On-state resistance: 3.5mΩ
Power dissipation: 1kW
Drain-source voltage: 100V
Drain current: 320A
Kind of channel: enhancement
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VUO190-08NO7 VUO190-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE2BABEF7649AE53672&compId=VUO190-08NO7.pdf?ci_sign=7d5953cf66e9d79c0c489443ea692fb8e2598469 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 240A; Ifsm: 2.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 240A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+5015.40 грн
В кошику  од. на суму  грн.
MD18200S-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.5V
Load current: 200A
Max. load current: 310A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6.5kA
Case: package S
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
товару немає в наявності
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IXBH24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83
IXBH24N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 230A
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 190ns
Gate charge: 0.14µC
Turn-off time: 1285ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1540.50 грн
В кошику  од. на суму  грн.
IXDD604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+130.72 грн
10+88.86 грн
12+84.10 грн
31+79.34 грн
50+78.54 грн
100+76.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2
+1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Technology: GigaMOS™; TrenchT2™
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2324.85 грн
2+2041.37 грн
20+1982.66 грн
В кошику  од. на суму  грн.
IXFH30N50P pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1
IXFH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
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IXFH30N50Q3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6
IXFH30N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
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IXTQ30N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd
IXTQ30N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd
IXTT30N50L
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTT30N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTH30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTH30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXFT30N50P pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1
IXFT30N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFT30N50Q3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6
IXFT30N50Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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IXTH30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTQ30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTQ30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTQ30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTT30N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTY14N60X2 IXTY14N60X2_DS_1.pdf
IXTY14N60X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
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LBA716S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4F258929B38BF&compId=lba716.pdf?ci_sign=d45d468b46d147689665005b9ee4dfd3cf1d6094
LBA716S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+577.58 грн
3+399.86 грн
7+378.44 грн
100+362.58 грн
В кошику  од. на суму  грн.
LBA716 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0
LBA716
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+463.09 грн
3+399.07 грн
7+376.86 грн
В кошику  од. на суму  грн.
MDD142-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E076A735FF9E28&compId=MDD142-16N1-DTE.pdf?ci_sign=b81a928fa52fbbec2ea352c4ce2044d25f13adb9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MDD142-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3696.19 грн
В кошику  од. на суму  грн.
DMA150YC1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2EE937A7E0CE&compId=DMA150YC1600NA.pdf?ci_sign=eb9d0cd237fe04937e9b7f93c2a2703efc0afafc
DMA150YC1600NA
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 700A
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common cathode
товару немає в наявності
В кошику  од. на суму  грн.
DMA150YA1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2D437F59C0CE&compId=DMA150YA1600NA.pdf?ci_sign=981018eb9fe457baa6e6553f151d3e4298168dcd
DMA150YA1600NA
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common anode
товару немає в наявності
В кошику  од. на суму  грн.
CPC1966Y pVersion=0046&contRep=ZT&docId=005056AB82531EE98FCB3ADB02BCF8BF&compId=CPC1966.pdf?ci_sign=d8a0ffe0b0c10a0b312f6bc7b4d31fd7f4a4bc52
CPC1966Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 3A
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 240V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 627 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+413.54 грн
5+227.70 грн
12+215.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEI120-12A description pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B98284067443E143&compId=dsei120-12a.pdf?ci_sign=6a60535cc3c98501893d4b09a81381b32c83ed3d
DSEI120-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
на замовлення 248 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+886.88 грн
2+764.03 грн
4+721.98 грн
10+706.11 грн
30+694.21 грн
В кошику  од. на суму  грн.
DSEI120-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4B274AB88A0C4&compId=DSEI120-12AZ.pdf?ci_sign=05a92d3aa13572b2603654c465e7fd024cf02c7a
DSEI120-12AZ-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO268AAHV
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1031.28 грн
2+767.99 грн
4+725.94 грн
30+698.18 грн
В кошику  од. на суму  грн.
IXTY1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTY1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+176.01 грн
5+146.78 грн
7+134.88 грн
19+127.73 грн
70+122.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP2R4N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d
IXTP2R4N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
на замовлення 307 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+468.22 грн
4+295.14 грн
9+278.48 грн
250+268.16 грн
В кошику  од. на суму  грн.
MCC200-14io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA1C22EF4718520D6&compId=MCC200-14io1.pdf?ci_sign=30e8433f322486eb978085c608c43a3034c71d17 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC200-14io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6238.06 грн
В кошику  од. на суму  грн.
MCC200-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF2578EE46615EA&compId=MCC200-18IO1.pdf?ci_sign=9cebf59deee12ac16ee0b117dec34e4e5e3553ef pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC200-18io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6757.54 грн
В кошику  од. на суму  грн.
VGO36-16IO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6236239A8C0C4&compId=VGO36-16io7.pdf?ci_sign=f9fb0bce59b8ae8122be8b955a3f251a5e31da08
VGO36-16IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Gate current: 65mA
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1347.41 грн
3+1182.93 грн
10+1134.54 грн
В кошику  од. на суму  грн.
CPC5620A pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EF6508D1A3FE745&compId=CPC5620_21.pdf?ci_sign=87f123f955bcf1144c1b242dd30525007807a0aa
CPC5620A
Виробник: IXYS
Category: Interfaces others - integrated circuits
Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube
Type of integrated circuit: phone line interface
Supply voltage: 2.8...5.5V DC
Interface: PLI
Mounting: SMD
Case: SO32
Integrated circuit features: galvanically isolated
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
IXYH60N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB24A40B479820&compId=IXYH60N90C3.pdf?ci_sign=57fc15f8e17396bfde6a9654fad8ffe22b1c18b7
IXYH60N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 104ns
Turn-off time: 268ns
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 310A
на замовлення 307 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+830.49 грн
2+480.00 грн
6+453.81 грн
120+449.85 грн
В кошику  од. на суму  грн.
IXFT14N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24
IXFT14N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTP140N12T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba
IXTP140N12T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
MEO450-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MEO450-12DA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 453A; Y4-M6; Ufmax: 1.76V
Type of semiconductor module: diode
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 1.76V
Load current: 453A
Max. forward impulse current: 4.8kA
Max. off-state voltage: 1.2kV
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5775.82 грн
В кошику  од. на суму  грн.
MCO150-12IO1 littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d
MCO150-12IO1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2830.67 грн
В кошику  од. на суму  грн.
IXFP14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFP14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTQ14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXFA14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFA14N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFH14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFH14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTA14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTA14N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTP14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTP14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTP14N60PM pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1339820&compId=IXTP14N60PM.pdf?ci_sign=fe79afdb307ca615dc69964670973d4c6149b61e
IXTP14N60PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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В кошику  од. на суму  грн.
IXTP80N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab
IXTP80N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+234.11 грн
7+148.36 грн
18+140.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA80N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab
IXTA80N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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В кошику  од. на суму  грн.
IXTA180N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765
IXTA180N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+443.44 грн
4+264.99 грн
10+250.71 грн
25+246.74 грн
50+240.39 грн
В кошику  од. на суму  грн.
IXTP180N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765
IXTP180N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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В кошику  од. на суму  грн.
CPC1972GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77
CPC1972GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
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CPC1972GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
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FUO22-12N pVersion=0046&contRep=ZT&docId=005056AB82531EE987F55DC0A59378BF&compId=FUO22-12N.pdf?ci_sign=ff71e9cc4948b645864c0457bca1ed4e0808aba6
FUO22-12N
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Type of bridge rectifier: three-phase
Max. forward voltage: 1.2V
Load current: 30A
Max. forward impulse current: 150A
Max. off-state voltage: 1.2kV
на замовлення 246 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1113.30 грн
3+977.45 грн
10+939.36 грн
В кошику  од. на суму  грн.
IXFN132N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF964F62AE6B820&compId=IXFN132N50P3.pdf?ci_sign=3d53e2e7d5a8766b34ef8c5d8db2b89f63097539
IXFN132N50P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
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IXFB132N50P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4611EE4E6AA18&compId=IXFB132N50P3.pdf?ci_sign=5f657928f29000d858e2b0c3da93947744b88203
IXFB132N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
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IXFL132N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94FFC40FB820&compId=IXFL132N50P3.pdf?ci_sign=85792c6dcf977ebf78032c427263cc5303138c45
IXFL132N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
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DSEI2X61-06C pVersion=0046&contRep=ZT&docId=E291FD18AE0956F19A99005056AB752F&compId=96508.pdf?ci_sign=fe3ba4231a432602470235eb4879bc415d83b33a
DSEI2X61-06C
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1892.52 грн
2+1662.14 грн
5+1597.87 грн
В кошику  од. на суму  грн.
CPC1984Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493853439C0C7&compId=CPC1984Y.pdf?ci_sign=c4456eb49faad16e3d4dbbc32458cf0e8e594af7
CPC1984Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 1A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.66Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 4kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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MCC44-16io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D60D0D8B85E27&compId=MCC44-16IO1B-DTE.pdf?ci_sign=ea286ae49b04ba3e975ed8e5bf2e0596849d9d2c pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCC44-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Mechanical mounting: screw
Electrical mounting: screw
Case: TO240AA
Type of semiconductor module: thyristor
Gate current: 100/200mA
Max. forward voltage: 1.34V
Load current: 49A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2077.08 грн
2+1823.99 грн
В кошику  од. на суму  грн.
IXTQ69N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D131A4635E27&compId=IXTQ69N30P-DTE.pdf?ci_sign=30ac47e4c9ca5a13d0405042e859205ebf2f7209
IXTQ69N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: Polar™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Gate charge: 156nC
Reverse recovery time: 330ns
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 300V
Power dissipation: 500W
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IXFH320N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110
IXFH320N10T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Case: TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Reverse recovery time: 98ns
Gate charge: 430nC
On-state resistance: 3.5mΩ
Power dissipation: 1kW
Drain-source voltage: 100V
Drain current: 320A
Kind of channel: enhancement
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VUO190-08NO7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE2BABEF7649AE53672&compId=VUO190-08NO7.pdf?ci_sign=7d5953cf66e9d79c0c489443ea692fb8e2598469
VUO190-08NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 240A; Ifsm: 2.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 240A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5015.40 грн
В кошику  од. на суму  грн.
MD18200S-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.5V
Load current: 200A
Max. load current: 310A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6.5kA
Case: package S
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
товару немає в наявності
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