Продукція > IXYS > Всі товари виробника IXYS (18218) > Сторінка 295 з 304

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PAA191 PAA191 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: THT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
1+759.57 грн
3+401.45 грн
7+379.24 грн
В кошику  од. на суму  грн.
PAA191S PAA191S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
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PAA191STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
товару немає в наявності
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PLA191 PLA191 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
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PLA191STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFK300N20X3 IXFK300N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 170ns
Gate charge: 375nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
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MCC200-16io1 IXYS pVersion=0046&contRep=ZT&docId=E29208AD5CE395F19A99005056AB752F&compId=L627.pdf?ci_sign=45ae8fd0beea3436de91781e35bd8c3b2e0c91a8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
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IXTT170N10P IXTT170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Kind of channel: enhancement
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Gate charge: 198nC
Reverse recovery time: 120ns
On-state resistance: 9mΩ
Power dissipation: 715W
Gate-source voltage: ±20V
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
1+930.45 грн
2+612.49 грн
5+579.17 грн
30+556.95 грн
В кошику  од. на суму  грн.
IXTK170N10P IXTK170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Kind of package: tube
на замовлення 312 шт:
термін постачання 21-30 дні (днів)
1+732.23 грн
2+610.11 грн
3+609.32 грн
5+576.79 грн
25+570.44 грн
100+553.78 грн
В кошику  од. на суму  грн.
IXTQ52N30P IXTQ52N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90C271079FBE27&compId=IXTQ52N30P-DTE.pdf?ci_sign=cf659494e94781585499e1614568475c46cc3563 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
на замовлення 199 шт:
термін постачання 21-30 дні (днів)
1+474.20 грн
3+314.97 грн
9+297.52 грн
В кошику  од. на суму  грн.
IXTY3N50P IXTY3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
17+26.49 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IXTA3N50P IXTA3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
6+72.62 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IXFB44N100P IXFB44N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47B1C40012A18&compId=IXFB44N100P.pdf?ci_sign=fe6581ef286df05fe0b0acd958d2ed414c5337a2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
1+1781.45 грн
2+1563.76 грн
В кошику  од. на суму  грн.
IXFK140N30P IXFK140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Power dissipation: 1.04kW
Gate-source voltage: ±20V
Case: TO264
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
1+1301.27 грн
3+1142.47 грн
10+1098.83 грн
В кошику  од. на суму  грн.
IXFB60N80P IXFB60N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B28FB248CCFA4A15&compId=IXFB60N80P.pdf?ci_sign=74ac471adf1c30241a4f29653fe0f24dc4a054f0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+1883.98 грн
2+1654.20 грн
В кошику  од. на суму  грн.
IXFR18N90P IXFR18N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B09820&compId=IXFR18N90P.pdf?ci_sign=630c9b0ce412688e2b82a725d5ca14f372c1c7c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+943.27 грн
2+686.28 грн
4+648.99 грн
В кошику  од. на суму  грн.
IXFH120N15P IXFH120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Kind of package: tube
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
1+680.97 грн
3+456.19 грн
6+430.81 грн
10+417.32 грн
30+414.94 грн
В кошику  од. на суму  грн.
IXFH52N30P IXFH52N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E98F50BC18BF&compId=IXF(V%2CH)52N30P(S).pdf?ci_sign=364d4b58b7cffdd5dffcd14a44a5a11a01598e3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 110nC
Reverse recovery time: 160ns
On-state resistance: 73mΩ
Gate-source voltage: ±20V
Drain current: 52A
Drain-source voltage: 300V
Power dissipation: 400W
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
1+522.90 грн
3+342.74 грн
8+323.70 грн
120+314.97 грн
В кошику  од. на суму  грн.
IXFB300N10P IXFB300N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1918.15 грн
В кошику  од. на суму  грн.
MMIX1F40N110P MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+3631.25 грн
10+3243.35 грн
20+3241.76 грн
В кошику  од. на суму  грн.
CPC1906Y CPC1906Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1900C7&compId=CPC1906.pdf?ci_sign=ecc876797bb2c9d84a9e02b4914db18b397562b5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 2A
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.3Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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IXTP44N10T IXTP44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 161 шт:
термін постачання 21-30 дні (днів)
3+153.79 грн
10+110.28 грн
14+70.61 грн
37+66.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MDNA360UB2200PTED IXYS MDNA360UB2200PTED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
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MDNA210UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
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MDNA280UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
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MCNA120UI2200TED IXYS MCNA120UI2200TED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Power dissipation: 190W
Max. off-state voltage: 1.7kV
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Case: E2-Pack
Application: Inverter
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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В кошику  од. на суму  грн.
LOC110 LOC110 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: photodiode
Insulation voltage: 3.75kV
на замовлення 364 шт:
термін постачання 21-30 дні (днів)
2+238.38 грн
9+114.25 грн
23+107.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTU4N70X2 IXTU4N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
3+158.92 грн
5+133.29 грн
9+115.83 грн
23+109.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTA4N70X2 IXTA4N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
3+144.40 грн
8+126.15 грн
21+119.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PLB150S PLB150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Mounting: SMT
Contacts configuration: SPST-NC
Type of relay: solid state
Kind of output: MOSFET
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 7Ω
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
1+517.77 грн
4+273.72 грн
10+258.64 грн
В кошику  од. на суму  грн.
IXFR24N100Q3 IXFR24N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B8D820&compId=IXFR24N100Q3.pdf?ci_sign=ca4e72774d87e585c7a699e877221fe57b34009d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+1897.65 грн
2+1666.10 грн
В кошику  од. на суму  грн.
IXFK24N100Q3 IXFK24N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD172354D3820&compId=IXFK(X)24N100Q3.pdf?ci_sign=d4b7827559308d1b5d73efbdd785ff703ce77315 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: TO264
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFN24N100 IXFN24N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89ECE2C62351E27&compId=IXFN24N100-DTE.pdf?ci_sign=25e1c0067815d2041ecf400ffd60ad891352f678 description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: SOT227B
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Gate-source voltage: ±30V
Technology: HiPerFET™
Pulsed drain current: 96A
Mechanical mounting: screw
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В кошику  од. на суму  грн.
IXFX24N100Q3 IXFX24N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD172354D3820&compId=IXFK(X)24N100Q3.pdf?ci_sign=d4b7827559308d1b5d73efbdd785ff703ce77315 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTX24N100 IXTX24N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F976349FCD820&compId=IXTX24N100.pdf?ci_sign=8c8873cc3b813e3bcc60bb2ace6802ae127d5697 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
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DAA200X1800NA DAA200X1800NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03 Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Features of semiconductor devices: avalanche breakdown effect
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.21V
Load current: 100A x2
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.5kA
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+2448.74 грн
2+2150.07 грн
3+2149.27 грн
В кошику  од. на суму  грн.
CLA60MT1200NHB CLA60MT1200NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF950EA5DBD8BF&compId=CLA60MT1200NHB.pdf?ci_sign=931ed8de95f4a498e58b92338e50a36a33e544fe Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: TO247-3
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+610.90 грн
3+387.96 грн
7+366.54 грн
В кошику  од. на суму  грн.
CLA80MT1200NHB CLA80MT1200NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822040C5C200C4&compId=CLA80MT1200NHB.pdf?ci_sign=b7d475d8ebe5374c36b717c8b05ac079131171a7 Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Case: TO247-3
Kind of package: tube
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Mounting: THT
на замовлення 323 шт:
термін постачання 21-30 дні (днів)
1+729.67 грн
2+480.00 грн
6+453.81 грн
30+436.36 грн
В кошику  од. на суму  грн.
CLA60MT1200NHR CLA60MT1200NHR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFAF1199F33C0C4&compId=CLA60MT1200NHR.pdf?ci_sign=667c2802955af27425e185a40228badc5bc85a18 Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: ISO247™
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
1+876.63 грн
2+646.61 грн
4+611.70 грн
30+601.38 грн
В кошику  од. на суму  грн.
IXFR26N100P IXFR26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BB9820&compId=IXFR26N100P.pdf?ci_sign=3b03500e95698d4c8c007286dc3266ee074c8df4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+2382.95 грн
2+2092.15 грн
3+2091.36 грн
В кошику  од. на суму  грн.
IXFX26N100P IXFX26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Case: PLUS247™
Mounting: THT
On-state resistance: 390mΩ
Drain current: 26A
Power dissipation: 780W
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFR26N120P IXFR26N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BCF820&compId=IXFR26N120P.pdf?ci_sign=a2dcdd142b39fa518d0ed9ca8e23f820f13262eb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
On-state resistance: 0.55Ω
Drain current: 15A
Power dissipation: 320W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 225nC
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+2556.40 грн
В кошику  од. на суму  грн.
IXFK26N120P IXFK26N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28579882FBC9820&compId=IXFK(X)26N120P.pdf?ci_sign=b487e0c929a7e7b9a742cefa0bc697ee9564f6a4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; TO264
Case: TO264
Mounting: THT
On-state resistance: 0.5Ω
Drain current: 26A
Power dissipation: 960W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 255nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFX26N120P IXFX26N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28579882FBC9820&compId=IXFK(X)26N120P.pdf?ci_sign=b487e0c929a7e7b9a742cefa0bc697ee9564f6a4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™
Case: PLUS247™
Mounting: THT
On-state resistance: 0.5Ω
Drain current: 26A
Power dissipation: 960W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 255nC
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IXGH24N170 IXGH24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1082.54 грн
3+950.47 грн
В кошику  од. на суму  грн.
IXGT24N170 IXGT24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 150A
Collector-emitter voltage: 1.7kV
Technology: NPT
Case: TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: SMD
Turn-on time: 105ns
Gate charge: 106nC
Turn-off time: 560ns
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IXYH24N170C IXYH24N170C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE89E33EF98F820&compId=IXYH24N170C.pdf?ci_sign=eb0fb2a3051b99d46f8a9ce2b54f37ef9bae52ce Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 24A; 500W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 500W
Pulsed collector current: 140A
Collector-emitter voltage: 1.7kV
Technology: XPT™
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 47ns
Gate charge: 96nC
Turn-off time: 336ns
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IXYH24N170CV1 IXYH24N170CV1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF48BAEA1A7820&compId=IXYH24N170CV1.pdf?ci_sign=b2d17e8d83e569f858626a11a68b0ac94a42ca9d Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 24A; 500W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 500W
Pulsed collector current: 140A
Collector-emitter voltage: 1.7kV
Technology: XPT™
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 47ns
Gate charge: 96nC
Turn-off time: 336ns
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IXGA24N120C3 IXGA24N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5CADD2F75820&compId=IXGA(H%2CP)24N120C3.pdf?ci_sign=785f3a362f18759e260d7ef53ed0e9570b89a777 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Case: TO263
Type of transistor: IGBT
Kind of package: tube
Mounting: SMD
Turn-on time: 51ns
Gate charge: 79nC
Turn-off time: 430ns
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В кошику  од. на суму  грн.
IXGH24N120C3 IXGH24N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5CADD2F75820&compId=IXGA(H%2CP)24N120C3.pdf?ci_sign=785f3a362f18759e260d7ef53ed0e9570b89a777 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
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IXGH24N120C3H1 IXGH24N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC643B46CF7820&compId=IXGH24N120C3H1.pdf?ci_sign=95a98f3d1dbb0fddb85353b16ef19a08cf4ab3eb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
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IXGH24N170A IXGH24N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3FCFE5B71820&compId=IXGH(T)24N170A.pdf?ci_sign=d7f55190fb1ae41de43c5d2e465d23d3a7cfcd72 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
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IXGP24N120C3 IXGP24N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5CADD2F75820&compId=IXGA(H%2CP)24N120C3.pdf?ci_sign=785f3a362f18759e260d7ef53ed0e9570b89a777 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGT24N170A IXGT24N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3FCFE5B71820&compId=IXGH(T)24N170A.pdf?ci_sign=d7f55190fb1ae41de43c5d2e465d23d3a7cfcd72 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 75A
Collector-emitter voltage: 1.7kV
Technology: NPT
Case: TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: SMD
Turn-on time: 54ns
Gate charge: 0.14µC
Turn-off time: 456ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ26N50P IXTQ26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
1+469.93 грн
3+350.68 грн
8+331.63 грн
30+325.29 грн
В кошику  од. на суму  грн.
IXFH26N50P IXFH26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F4D820&compId=IXFH26N50P.pdf?ci_sign=d5eff1cf7d858618cda3bc4dde50d0892b2bdfa0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 176 шт:
термін постачання 21-30 дні (днів)
1+456.26 грн
3+348.29 грн
8+329.25 грн
30+326.87 грн
120+317.35 грн
В кошику  од. на суму  грн.
IXFP26N50P3 IXFP26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
1+624.58 грн
3+403.04 грн
7+380.82 грн
В кошику  од. на суму  грн.
IXFQ26N50P3 IXFQ26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFJ26N50P3 IXFJ26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB693B12D7660C4&compId=IXFJ26N50P3.pdf?ci_sign=5ef1ecd6bc543a0395eb4820b9ef6d4f9818ecfb Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
товару немає в наявності
В кошику  од. на суму  грн.
IXTT26N50P IXTT26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
товару немає в наявності
В кошику  од. на суму  грн.
PAA191 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad
PAA191
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: THT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+759.57 грн
3+401.45 грн
7+379.24 грн
В кошику  од. на суму  грн.
PAA191S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad
PAA191S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
товару немає в наявності
В кошику  од. на суму  грн.
PAA191STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A860C7&compId=PAA191.pdf?ci_sign=2ffa2a1db02679800af199023510c8a9cfbbbdad
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Mounting: SMT
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
товару немає в наявності
В кошику  од. на суму  грн.
PLA191 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
PLA191
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
PLA191STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXFK300N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b
IXFK300N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 170ns
Gate charge: 375nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
товару немає в наявності
В кошику  од. на суму  грн.
MCC200-16io1 pVersion=0046&contRep=ZT&docId=E29208AD5CE395F19A99005056AB752F&compId=L627.pdf?ci_sign=45ae8fd0beea3436de91781e35bd8c3b2e0c91a8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXTT170N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191
IXTT170N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Kind of channel: enhancement
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Gate charge: 198nC
Reverse recovery time: 120ns
On-state resistance: 9mΩ
Power dissipation: 715W
Gate-source voltage: ±20V
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+930.45 грн
2+612.49 грн
5+579.17 грн
30+556.95 грн
В кошику  од. на суму  грн.
IXTK170N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191
IXTK170N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Kind of package: tube
на замовлення 312 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+732.23 грн
2+610.11 грн
3+609.32 грн
5+576.79 грн
25+570.44 грн
100+553.78 грн
В кошику  од. на суму  грн.
IXTQ52N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90C271079FBE27&compId=IXTQ52N30P-DTE.pdf?ci_sign=cf659494e94781585499e1614568475c46cc3563
IXTQ52N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
на замовлення 199 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+474.20 грн
3+314.97 грн
9+297.52 грн
В кошику  од. на суму  грн.
IXTY3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTY3N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.49 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IXTA3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTA3N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Kind of package: tube
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+72.62 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IXFB44N100P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47B1C40012A18&compId=IXFB44N100P.pdf?ci_sign=fe6581ef286df05fe0b0acd958d2ed414c5337a2
IXFB44N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1781.45 грн
2+1563.76 грн
В кошику  од. на суму  грн.
IXFK140N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2
IXFK140N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Power dissipation: 1.04kW
Gate-source voltage: ±20V
Case: TO264
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1301.27 грн
3+1142.47 грн
10+1098.83 грн
В кошику  од. на суму  грн.
IXFB60N80P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B28FB248CCFA4A15&compId=IXFB60N80P.pdf?ci_sign=74ac471adf1c30241a4f29653fe0f24dc4a054f0
IXFB60N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1883.98 грн
2+1654.20 грн
В кошику  од. на суму  грн.
IXFR18N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B09820&compId=IXFR18N90P.pdf?ci_sign=630c9b0ce412688e2b82a725d5ca14f372c1c7c0
IXFR18N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+943.27 грн
2+686.28 грн
4+648.99 грн
В кошику  од. на суму  грн.
IXFH120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFH120N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Kind of package: tube
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+680.97 грн
3+456.19 грн
6+430.81 грн
10+417.32 грн
30+414.94 грн
В кошику  од. на суму  грн.
IXFH52N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E98F50BC18BF&compId=IXF(V%2CH)52N30P(S).pdf?ci_sign=364d4b58b7cffdd5dffcd14a44a5a11a01598e3a
IXFH52N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 110nC
Reverse recovery time: 160ns
On-state resistance: 73mΩ
Gate-source voltage: ±20V
Drain current: 52A
Drain-source voltage: 300V
Power dissipation: 400W
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+522.90 грн
3+342.74 грн
8+323.70 грн
120+314.97 грн
В кошику  од. на суму  грн.
IXFB300N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99
IXFB300N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1918.15 грн
В кошику  од. на суму  грн.
MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
MMIX1F40N110P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3631.25 грн
10+3243.35 грн
20+3241.76 грн
В кошику  од. на суму  грн.
CPC1906Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1900C7&compId=CPC1906.pdf?ci_sign=ecc876797bb2c9d84a9e02b4914db18b397562b5
CPC1906Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 2A
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.3Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
товару немає в наявності
В кошику  од. на суму  грн.
IXTP44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTP44N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 161 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+153.79 грн
10+110.28 грн
14+70.61 грн
37+66.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MDNA360UB2200PTED MDNA360UB2200PTED.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
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В кошику  од. на суму  грн.
MDNA210UB2200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
товару немає в наявності
В кошику  од. на суму  грн.
MDNA280UB2200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
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MCNA120UI2200TED MCNA120UI2200TED.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Power dissipation: 190W
Max. off-state voltage: 1.7kV
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Case: E2-Pack
Application: Inverter
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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LOC110 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: photodiode
Insulation voltage: 3.75kV
на замовлення 364 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+238.38 грн
9+114.25 грн
23+107.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTU4N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf
IXTU4N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+158.92 грн
5+133.29 грн
9+115.83 грн
23+109.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTA4N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf
IXTA4N70X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+144.40 грн
8+126.15 грн
21+119.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PLB150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13
PLB150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Mounting: SMT
Contacts configuration: SPST-NC
Type of relay: solid state
Kind of output: MOSFET
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 7Ω
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+517.77 грн
4+273.72 грн
10+258.64 грн
В кошику  од. на суму  грн.
IXFR24N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B8D820&compId=IXFR24N100Q3.pdf?ci_sign=ca4e72774d87e585c7a699e877221fe57b34009d
IXFR24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1897.65 грн
2+1666.10 грн
В кошику  од. на суму  грн.
IXFK24N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD172354D3820&compId=IXFK(X)24N100Q3.pdf?ci_sign=d4b7827559308d1b5d73efbdd785ff703ce77315
IXFK24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: TO264
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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IXFN24N100 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89ECE2C62351E27&compId=IXFN24N100-DTE.pdf?ci_sign=25e1c0067815d2041ecf400ffd60ad891352f678
IXFN24N100
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: SOT227B
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Gate-source voltage: ±30V
Technology: HiPerFET™
Pulsed drain current: 96A
Mechanical mounting: screw
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IXFX24N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD172354D3820&compId=IXFK(X)24N100Q3.pdf?ci_sign=d4b7827559308d1b5d73efbdd785ff703ce77315
IXFX24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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IXTX24N100 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F976349FCD820&compId=IXTX24N100.pdf?ci_sign=8c8873cc3b813e3bcc60bb2ace6802ae127d5697
IXTX24N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
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DAA200X1800NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03
DAA200X1800NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Features of semiconductor devices: avalanche breakdown effect
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.21V
Load current: 100A x2
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.5kA
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2448.74 грн
2+2150.07 грн
3+2149.27 грн
В кошику  од. на суму  грн.
CLA60MT1200NHB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF950EA5DBD8BF&compId=CLA60MT1200NHB.pdf?ci_sign=931ed8de95f4a498e58b92338e50a36a33e544fe
CLA60MT1200NHB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: TO247-3
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+610.90 грн
3+387.96 грн
7+366.54 грн
В кошику  од. на суму  грн.
CLA80MT1200NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822040C5C200C4&compId=CLA80MT1200NHB.pdf?ci_sign=b7d475d8ebe5374c36b717c8b05ac079131171a7
CLA80MT1200NHB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Case: TO247-3
Kind of package: tube
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Mounting: THT
на замовлення 323 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+729.67 грн
2+480.00 грн
6+453.81 грн
30+436.36 грн
В кошику  од. на суму  грн.
CLA60MT1200NHR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFAF1199F33C0C4&compId=CLA60MT1200NHR.pdf?ci_sign=667c2802955af27425e185a40228badc5bc85a18
CLA60MT1200NHR
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: ISO247™
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+876.63 грн
2+646.61 грн
4+611.70 грн
30+601.38 грн
В кошику  од. на суму  грн.
IXFR26N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BB9820&compId=IXFR26N100P.pdf?ci_sign=3b03500e95698d4c8c007286dc3266ee074c8df4
IXFR26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2382.95 грн
2+2092.15 грн
3+2091.36 грн
В кошику  од. на суму  грн.
IXFX26N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7
IXFX26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Case: PLUS247™
Mounting: THT
On-state resistance: 390mΩ
Drain current: 26A
Power dissipation: 780W
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 197nC
товару немає в наявності
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IXFR26N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BCF820&compId=IXFR26N120P.pdf?ci_sign=a2dcdd142b39fa518d0ed9ca8e23f820f13262eb
IXFR26N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
On-state resistance: 0.55Ω
Drain current: 15A
Power dissipation: 320W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 225nC
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2556.40 грн
В кошику  од. на суму  грн.
IXFK26N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28579882FBC9820&compId=IXFK(X)26N120P.pdf?ci_sign=b487e0c929a7e7b9a742cefa0bc697ee9564f6a4
IXFK26N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; TO264
Case: TO264
Mounting: THT
On-state resistance: 0.5Ω
Drain current: 26A
Power dissipation: 960W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 255nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFX26N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28579882FBC9820&compId=IXFK(X)26N120P.pdf?ci_sign=b487e0c929a7e7b9a742cefa0bc697ee9564f6a4
IXFX26N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™
Case: PLUS247™
Mounting: THT
On-state resistance: 0.5Ω
Drain current: 26A
Power dissipation: 960W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 255nC
товару немає в наявності
В кошику  од. на суму  грн.
IXGH24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901
IXGH24N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1082.54 грн
3+950.47 грн
В кошику  од. на суму  грн.
IXGT24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901
IXGT24N170
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 150A
Collector-emitter voltage: 1.7kV
Technology: NPT
Case: TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: SMD
Turn-on time: 105ns
Gate charge: 106nC
Turn-off time: 560ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYH24N170C pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE89E33EF98F820&compId=IXYH24N170C.pdf?ci_sign=eb0fb2a3051b99d46f8a9ce2b54f37ef9bae52ce
IXYH24N170C
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 24A; 500W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 500W
Pulsed collector current: 140A
Collector-emitter voltage: 1.7kV
Technology: XPT™
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 47ns
Gate charge: 96nC
Turn-off time: 336ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYH24N170CV1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF48BAEA1A7820&compId=IXYH24N170CV1.pdf?ci_sign=b2d17e8d83e569f858626a11a68b0ac94a42ca9d
IXYH24N170CV1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 24A; 500W; TO247-3
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 500W
Pulsed collector current: 140A
Collector-emitter voltage: 1.7kV
Technology: XPT™
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 47ns
Gate charge: 96nC
Turn-off time: 336ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGA24N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5CADD2F75820&compId=IXGA(H%2CP)24N120C3.pdf?ci_sign=785f3a362f18759e260d7ef53ed0e9570b89a777
IXGA24N120C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Case: TO263
Type of transistor: IGBT
Kind of package: tube
Mounting: SMD
Turn-on time: 51ns
Gate charge: 79nC
Turn-off time: 430ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGH24N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5CADD2F75820&compId=IXGA(H%2CP)24N120C3.pdf?ci_sign=785f3a362f18759e260d7ef53ed0e9570b89a777
IXGH24N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGH24N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC643B46CF7820&compId=IXGH24N120C3H1.pdf?ci_sign=95a98f3d1dbb0fddb85353b16ef19a08cf4ab3eb
IXGH24N120C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGH24N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3FCFE5B71820&compId=IXGH(T)24N170A.pdf?ci_sign=d7f55190fb1ae41de43c5d2e465d23d3a7cfcd72
IXGH24N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXGP24N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5CADD2F75820&compId=IXGA(H%2CP)24N120C3.pdf?ci_sign=785f3a362f18759e260d7ef53ed0e9570b89a777
IXGP24N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGT24N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3FCFE5B71820&compId=IXGH(T)24N170A.pdf?ci_sign=d7f55190fb1ae41de43c5d2e465d23d3a7cfcd72
IXGT24N170A
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 75A
Collector-emitter voltage: 1.7kV
Technology: NPT
Case: TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: SMD
Turn-on time: 54ns
Gate charge: 0.14µC
Turn-off time: 456ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b
IXTQ26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+469.93 грн
3+350.68 грн
8+331.63 грн
30+325.29 грн
В кошику  од. на суму  грн.
IXFH26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F4D820&compId=IXFH26N50P.pdf?ci_sign=d5eff1cf7d858618cda3bc4dde50d0892b2bdfa0
IXFH26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 176 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+456.26 грн
3+348.29 грн
8+329.25 грн
30+326.87 грн
120+317.35 грн
В кошику  од. на суму  грн.
IXFP26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFP26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+624.58 грн
3+403.04 грн
7+380.82 грн
В кошику  од. на суму  грн.
IXFQ26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFQ26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFJ26N50P3 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB693B12D7660C4&compId=IXFJ26N50P3.pdf?ci_sign=5ef1ecd6bc543a0395eb4820b9ef6d4f9818ecfb
IXFJ26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
товару немає в наявності
В кошику  од. на суму  грн.
IXTT26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b
IXTT26N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
товару немає в наявності
В кошику  од. на суму  грн.
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