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IXYK140N120A4 IXYK140N120A4 IXYS IXYK140N120A4_DS.pdf Description: IGBT PT 1200V 480A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 429 шт:
термін постачання 21-31 дні (днів)
1+3176.22 грн
25+2117.08 грн
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IXYX140N120A4 IXYX140N120A4 IXYS IXYX140N120A4_DS.pdf Description: IGBT PT 1200V 480A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+3370.45 грн
30+2265.95 грн
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IXYN140N120A4 IXYN140N120A4 IXYS littelfuse-discrete-igbts-xpt-ixyn140n120a4-datasheet?assetguid=13a5ea28-9028-4ba7-bc80-764d7c886511 Description: IGBT MODULE 1200V 380A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
1+3893.26 грн
10+2847.40 грн
100+2720.23 грн
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IXTA3N110-TRL IXTA3N110-TRL IXYS Description: IXTA3N110 TRL
товару немає в наявності
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IXFA80N25X3TRL IXFA80N25X3TRL IXYS Description: MOSFET N-CH 250V 80A X3CLASS TO-
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
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IXFH80N25X3 IXFH80N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 2001 шт:
термін постачання 21-31 дні (днів)
1+1019.09 грн
10+886.26 грн
100+733.74 грн
500+599.61 грн
1000+522.24 грн
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MCC26-14IO1 IXYS Description: BIPOLAR MODULE - THYRISTOR TO-2
товару немає в наявності
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IXGT32N170-TRL IXGT32N170-TRL IXYS PdfFile324374.pdf Description: IGBT NPT 1700V 75A TO-268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 11mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
400+1394.72 грн
Мінімальне замовлення: 400
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IXYH10N170CV1 IXYH10N170CV1 IXYS Littelfuse-Discrete-IGBTs-XPT-IXYH10N170CV1-Datasheet.PDF?assetguid=19D287B4-5C8A-4D57-AF55-0AFDED612E1D Description: IGBT 1700V 36A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 466 шт:
термін постачання 21-31 дні (днів)
1+1060.16 грн
30+623.06 грн
120+536.02 грн
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IXYH24N170CV1 IXYH24N170CV1 IXYS media?resourcetype=datasheets&itemid=50271284-6150-4065-87d9-fe039e795f51&filename=littelfuse_discrete_igbts_xpt_ixyh24n170cv1_datasheet.pdf Description: IGBT 1700V 58A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 24A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 16ns/155ns
Switching Energy: 3.6mJ (on), 1.76mJ (off)
Test Condition: 850V, 24A, 5Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 500 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
1+1238.14 грн
30+731.00 грн
120+629.97 грн
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IXYH24N170C IXYH24N170C IXYS IXYH24N170C.pdf Description: IGBT 1700V 58A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/160ns
Switching Energy: 4.9mJ (on), 1.95mJ (off)
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 427 шт:
термін постачання 21-31 дні (днів)
1+930.96 грн
30+676.67 грн
120+615.23 грн
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IXYH30N170C IXYH30N170C IXYS littelfuse_discrete_igbts_xpt_ixyh30n170c_datasheet.pdf.pdf Description: 1700V/108A HIGH VOLTAGE XPT IGB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
300+657.23 грн
Мінімальне замовлення: 300
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DSEI36-06AS-TRL DSEI36-06AS-TRL IXYS littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff Description: DIODE STANDARD 600V 37A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+205.46 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
DSEI36-06AS-TRL DSEI36-06AS-TRL IXYS littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff Description: DIODE STANDARD 600V 37A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 2069 шт:
термін постачання 21-31 дні (днів)
1+464.62 грн
10+304.29 грн
100+242.17 грн
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IXFT40N85XHV IXFT40N85XHV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_40n85x_datasheet.pdf.pdf Description: MOSFET N-CH 850V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товару немає в наявності
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IXBK64N250 IXBK64N250 IXYS littelfuse-discrete-igbts-ixb-64n250-datasheet?assetguid=6f198893-d712-49ff-908d-12cba0a8ef2b Description: IGBT 2500V 75A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
1+7858.40 грн
25+6353.04 грн
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IXTA1N200P3HVTRL IXTA1N200P3HVTRL IXYS Description: MOFET N-CH 2000V 1.0A TO-263HV
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IXTA1N200P3HVTRL IXTA1N200P3HVTRL IXYS Description: MOFET N-CH 2000V 1.0A TO-263HV
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
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MCC132-16IO1B MCC132-16IO1B IXYS media?resourcetype=datasheets&amp;itemid=469670e0-e5d5-41ad-b104-35c18b54f920&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc132-16io1b%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
6+4454.43 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCC132-18IO1B MCC132-18IO1B IXYS media?resourcetype=datasheets&amp;itemid=8adc3d6a-68c4-40b6-b632-7058faa38df4&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc132-18io1b%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.8 kV
товару немає в наявності
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CS20-25MOT1-TUB CS20-25MOT1-TUB IXYS Littelfuse-Power-Semiconductors-CS20-25moT1-Datasheet?assetguid=1aa8f834-ccb4-4263-a838-d035df1046fc Description: SCR 2.5KV TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -10°C ~ 70°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-268AA
Voltage - Off State: 2.5 kV
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+2797.16 грн
30+1797.96 грн
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DSEP60-12AZ-TUB DSEP60-12AZ-TUB IXYS Description: DIODE STANDARD 1200V 60A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 600V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+641.75 грн
В кошику  од. на суму  грн.
DSEP6-06BS-TUB DSEP6-06BS-TUB IXYS media?resourcetype=datasheets&itemid=ab904792-a1bd-4c09-94d6-b38166049baa&filename=littelfuse%2520power%2520semiconductors%2520dsep6-06bs%2520datasheet.pdf Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
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DSEP6-06AS-TUB DSEP6-06AS-TUB IXYS media?resourcetype=datasheets&itemid=01813e50-fdce-40dd-b89a-8827a33af355&filename=littelfuse%2520power%2520semiconductors%2520dsep6-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.03 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)
70+85.64 грн
Мінімальне замовлення: 70
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DSEP60-12B DSEP60-12B IXYS media?resourcetype=datasheets&itemid=97049d1a-2730-4fa6-8341-38130c33194d&filename=littelfuse%2520power%2520semiconductors%2520dsep60-12b%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 600V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+771.81 грн
30+466.39 грн
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IXYX200N65B3 IXYX200N65B3 IXYS littelfuse_discrete_igbts_xpt_ixy_200n65b3_datasheet.pdf.pdf Description: IGBT 650V 410A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 60ns/370ns
Switching Energy: 5mJ (on), 4mJ (off)
Test Condition: 400V, 100A, 0Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 410 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1100 A
Power - Max: 1560 W
товару немає в наявності
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CMA20E1600PZ-TRL CMA20E1600PZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA20E1600PZ.pdf Description: SCR 1.6KV 31A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.46 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.6 kV
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CMA20E1600PB CMA20E1600PB IXYS Description: SCR 1.6KV 31A TO220
товару немає в наявності
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CMA20E1600PZ-TUB CMA20E1600PZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA20E1600PZ.pdf Description: SCR 1.6KV 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.46 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.6 kV
товару немає в наявності
В кошику  од. на суму  грн.
IXYH10N170C IXYH10N170C IXYS littelfusediscreteigbtsxptixyh10n170cdatashee.pdf Description: IGBT 1700V 36A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 17 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+784.64 грн
30+449.64 грн
120+382.49 грн
510+333.21 грн
В кошику  од. на суму  грн.
IXYH25N250CHV IXYH25N250CHV IXYS littelfuse_discrete_igbts_xpt_ixy_25n250chv_datasheet.pdf.pdf Description: IGBT 2500V 235A TO-247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
1+1882.46 грн
30+1240.73 грн
В кошику  од. на суму  грн.
IXYH8N250CV1HV IXYH8N250CV1HV IXYS littelfuse_discrete_igbts_xpt_ixyh8n250cv1hv_datasheet.pdf.pdf Description: IGBT 2500V 29A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
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IXYH30N65C3 IXYH30N65C3 IXYS littelfuse_discrete_igbts_xpt_ixy_30n65c3_datasheet.pdf.pdf Description: IGBT 650V 60A 270W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
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IXYH40N65C3D1 IXYH40N65C3D1 IXYS media?resourcetype=datasheets&itemid=097B1532-5263-463D-9683-6B0C7D39951B&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-40N65C3D1-Datasheet.PDF Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/110ns
Switching Energy: 830µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товару немає в наявності
В кошику  од. на суму  грн.
IXYH40N65B3D1 IXYH40N65B3D1 IXYS media?resourcetype=datasheets&itemid=CE930E34-1A02-46F8-85BC-52B83B11FC42&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-40N65B3D1-Datasheet.PDF Description: IGBT 650V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 37 ns
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
товару немає в наявності
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IXYH40N65C3H1 IXYH40N65C3H1 IXYS littelfuse-discrete-igbts-ixyh40n65c3h1-datasheet?assetguid=8988c00e-fa3d-4371-88c5-e1afd0817bb2 Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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IXYH40N65C3 IXYH40N65C3 IXYS littelfuse-discrete-igbts-ixyh40n65c3-datasheet?assetguid=09bd2958-7a8f-4ac3-9434-46d6ebaf6db3 Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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IXTV130N15T IXTV130N15T IXYS Description: MOSFET N-CH 150V 130A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Supplier Device Package: PLUS220
Drain to Source Voltage (Vdss): 150 V
товару немає в наявності
В кошику  од. на суму  грн.
IXGA30N60C3 IXGA30N60C3 IXYS media?resourcetype=datasheets&itemid=1c2e09fe-9002-469e-a60b-7957698727f8&filename=littelfuse_discrete_igbts_pt_ixg_30n60c3_datasheet.pdf Description: IGBT 600V 60A 220W TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товару немає в наявності
В кошику  од. на суму  грн.
N6012ZD060 IXYS media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf Description: SCR 600V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 600 V
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IXFA130N15X3TRL IXFA130N15X3TRL IXYS Description: MOSFET N-CH 150V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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IXFA130N15X3 IXFA130N15X3 IXYS DS100808B(IXFA-FP-FH130N15X3).pdf Description: MOSFET N-CH 150V 130A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
на замовлення 1359 шт:
термін постачання 21-31 дні (днів)
1+741.86 грн
50+570.71 грн
100+510.65 грн
500+422.84 грн
1000+380.56 грн
В кошику  од. на суму  грн.
A1237NC240 IXYS Description: SCR 2.4KV 2555A W11
товару немає в наявності
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IXTT1N250HV-TRL IXTT1N250HV-TRL IXYS littelfuse-discrete-mosfets-ixtt1n250hv-datasheet?assetguid=b97491fe-f9b5-41c0-b140-7e8b8600f646 Description: MOSFET N-CH 2500V 1.5A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
400+2363.26 грн
Мінімальне замовлення: 400
В кошику  од. на суму  грн.
IXFH14N100Q IXYS Description: MOSFET N-CH 1000V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товару немає в наявності
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MCC56-14IO1 MCC56-14IO1 IXYS Description: SCR MODULE 1.4KV 100A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 64 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.4 kV
товару немає в наявності
В кошику  од. на суму  грн.
IXTA220N04T2-TRL IXTA220N04T2-TRL IXYS PdfFile146995.pdf Description: MOSFET N-CH 40V 220A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+139.16 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
CMA50E1600HB CMA50E1600HB IXYS media?resourcetype=datasheets&itemid=f4358637-7c3d-484f-8bf1-dc9dd27d441c&filename=Littelfuse-Power-Semiconductors-CMA50E1600HB-Datasheet Description: SCR 1.6KV 79A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
на замовлення 1209 шт:
термін постачання 21-31 дні (днів)
1+519.39 грн
30+306.54 грн
120+262.08 грн
510+232.18 грн
В кошику  од. на суму  грн.
IXTY1R4N120PHV IXTY1R4N120PHV IXYS DS99871E(IXTY-TA-TP1R4N120P-HV).pdf Description: MOSFET N-CH 1200V 1.4A TO252
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IXTY1R4N120P-TRL IXYS Description: MOSFET N-CH 1200V 1.4A TO252
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IXTA1R4N120P-TRL IXTA1R4N120P-TRL IXYS Description: MOSFET N-CH 1200V 1.4A TO263
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DSEP15-06BS-TRL DSEP15-06BS-TRL IXYS media?resourcetype=datasheets&itemid=4d29f41a-7db8-4582-9d68-5338de39840d&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06bs%2520datasheet.pdf Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
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DSEP15-06BS-TUB DSEP15-06BS-TUB IXYS Description: DIODE GEN PURP 600V 15A TO263
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IXFH50N85X IXFH50N85X IXYS DS100704DIXFTFHFK50N85XHV.pdf Description: MOSFET N-CH 850V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
на замовлення 906 шт:
термін постачання 21-31 дні (днів)
1+1159.42 грн
30+725.84 грн
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IXYX40N450HV IXYX40N450HV IXYS Description: IGBT 4500V 95A TO-247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 660 W
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
1+5294.84 грн
30+3883.15 грн
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MDMA425P1600PTSF IXYS Description: DIODE MOD GP 1600V 425A SIMBUS F
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Technology: Standard
Current - Average Rectified (Io) (per Diode): 425A
Supplier Device Package: SimBus F
Voltage - DC Reverse (Vr) (Max): 1600 V
товару немає в наявності
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MDMA425P1600PT-PC IXYS Description: MDMA425P1600PTSF-PC
товару немає в наявності
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IXTP12N50P IXTP12N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-12N50P-Datasheet.PDF?assetguid=1EBA20B0-2CD4-4FB5-BDDC-FCD960E7D1DD Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
1+356.81 грн
50+178.16 грн
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DSEC16-12AS-TRL DSEC16-12AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535 Description: DIODE ARRAY GP 1200V 10A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.94 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
товару немає в наявності
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IXTA08N100D2-TRL IXTA08N100D2-TRL IXYS Description: IXTA08N100D2 TRL
товару немає в наявності
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IXYK140N120A4 IXYK140N120A4_DS.pdf
IXYK140N120A4
Виробник: IXYS
Description: IGBT PT 1200V 480A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 429 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3176.22 грн
25+2117.08 грн
В кошику  од. на суму  грн.
IXYX140N120A4 IXYX140N120A4_DS.pdf
IXYX140N120A4
Виробник: IXYS
Description: IGBT PT 1200V 480A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3370.45 грн
30+2265.95 грн
В кошику  од. на суму  грн.
IXYN140N120A4 littelfuse-discrete-igbts-xpt-ixyn140n120a4-datasheet?assetguid=13a5ea28-9028-4ba7-bc80-764d7c886511
IXYN140N120A4
Виробник: IXYS
Description: IGBT MODULE 1200V 380A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3893.26 грн
10+2847.40 грн
100+2720.23 грн
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IXTA3N110-TRL
IXTA3N110-TRL
Виробник: IXYS
Description: IXTA3N110 TRL
товару немає в наявності
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IXFA80N25X3TRL
IXFA80N25X3TRL
Виробник: IXYS
Description: MOSFET N-CH 250V 80A X3CLASS TO-
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXFH80N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf
IXFH80N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 2001 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1019.09 грн
10+886.26 грн
100+733.74 грн
500+599.61 грн
1000+522.24 грн
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MCC26-14IO1
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
товару немає в наявності
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IXGT32N170-TRL PdfFile324374.pdf
IXGT32N170-TRL
Виробник: IXYS
Description: IGBT NPT 1700V 75A TO-268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 11mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
400+1394.72 грн
Мінімальне замовлення: 400
В кошику  од. на суму  грн.
IXYH10N170CV1 Littelfuse-Discrete-IGBTs-XPT-IXYH10N170CV1-Datasheet.PDF?assetguid=19D287B4-5C8A-4D57-AF55-0AFDED612E1D
IXYH10N170CV1
Виробник: IXYS
Description: IGBT 1700V 36A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 466 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1060.16 грн
30+623.06 грн
120+536.02 грн
В кошику  од. на суму  грн.
IXYH24N170CV1 media?resourcetype=datasheets&itemid=50271284-6150-4065-87d9-fe039e795f51&filename=littelfuse_discrete_igbts_xpt_ixyh24n170cv1_datasheet.pdf
IXYH24N170CV1
Виробник: IXYS
Description: IGBT 1700V 58A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 24A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 16ns/155ns
Switching Energy: 3.6mJ (on), 1.76mJ (off)
Test Condition: 850V, 24A, 5Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 500 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1238.14 грн
30+731.00 грн
120+629.97 грн
В кошику  од. на суму  грн.
IXYH24N170C IXYH24N170C.pdf
IXYH24N170C
Виробник: IXYS
Description: IGBT 1700V 58A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/160ns
Switching Energy: 4.9mJ (on), 1.95mJ (off)
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 427 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+930.96 грн
30+676.67 грн
120+615.23 грн
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IXYH30N170C littelfuse_discrete_igbts_xpt_ixyh30n170c_datasheet.pdf.pdf
IXYH30N170C
Виробник: IXYS
Description: 1700V/108A HIGH VOLTAGE XPT IGB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+657.23 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
DSEI36-06AS-TRL littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff
DSEI36-06AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 600V 37A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+205.46 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
DSEI36-06AS-TRL littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff
DSEI36-06AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 600V 37A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 2069 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+464.62 грн
10+304.29 грн
100+242.17 грн
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IXFT40N85XHV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_40n85x_datasheet.pdf.pdf
IXFT40N85XHV
Виробник: IXYS
Description: MOSFET N-CH 850V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товару немає в наявності
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IXBK64N250 littelfuse-discrete-igbts-ixb-64n250-datasheet?assetguid=6f198893-d712-49ff-908d-12cba0a8ef2b
IXBK64N250
Виробник: IXYS
Description: IGBT 2500V 75A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7858.40 грн
25+6353.04 грн
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IXTA1N200P3HVTRL
IXTA1N200P3HVTRL
Виробник: IXYS
Description: MOFET N-CH 2000V 1.0A TO-263HV
товару немає в наявності
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IXTA1N200P3HVTRL
IXTA1N200P3HVTRL
Виробник: IXYS
Description: MOFET N-CH 2000V 1.0A TO-263HV
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MCC132-16IO1B media?resourcetype=datasheets&amp;itemid=469670e0-e5d5-41ad-b104-35c18b54f920&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc132-16io1b%2520datasheet.pdf
MCC132-16IO1B
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+4454.43 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCC132-18IO1B media?resourcetype=datasheets&amp;itemid=8adc3d6a-68c4-40b6-b632-7058faa38df4&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc132-18io1b%2520datasheet.pdf
MCC132-18IO1B
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.8 kV
товару немає в наявності
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CS20-25MOT1-TUB Littelfuse-Power-Semiconductors-CS20-25moT1-Datasheet?assetguid=1aa8f834-ccb4-4263-a838-d035df1046fc
CS20-25MOT1-TUB
Виробник: IXYS
Description: SCR 2.5KV TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -10°C ~ 70°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-268AA
Voltage - Off State: 2.5 kV
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2797.16 грн
30+1797.96 грн
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DSEP60-12AZ-TUB
DSEP60-12AZ-TUB
Виробник: IXYS
Description: DIODE STANDARD 1200V 60A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 600V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+641.75 грн
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DSEP6-06BS-TUB media?resourcetype=datasheets&itemid=ab904792-a1bd-4c09-94d6-b38166049baa&filename=littelfuse%2520power%2520semiconductors%2520dsep6-06bs%2520datasheet.pdf
DSEP6-06BS-TUB
Виробник: IXYS
Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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DSEP6-06AS-TUB media?resourcetype=datasheets&itemid=01813e50-fdce-40dd-b89a-8827a33af355&filename=littelfuse%2520power%2520semiconductors%2520dsep6-06as%2520datasheet.pdf
DSEP6-06AS-TUB
Виробник: IXYS
Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.03 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
70+85.64 грн
Мінімальне замовлення: 70
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DSEP60-12B media?resourcetype=datasheets&itemid=97049d1a-2730-4fa6-8341-38130c33194d&filename=littelfuse%2520power%2520semiconductors%2520dsep60-12b%2520datasheet.pdf
DSEP60-12B
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 600V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+771.81 грн
30+466.39 грн
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IXYX200N65B3 littelfuse_discrete_igbts_xpt_ixy_200n65b3_datasheet.pdf.pdf
IXYX200N65B3
Виробник: IXYS
Description: IGBT 650V 410A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 60ns/370ns
Switching Energy: 5mJ (on), 4mJ (off)
Test Condition: 400V, 100A, 0Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 410 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1100 A
Power - Max: 1560 W
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CMA20E1600PZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA20E1600PZ.pdf
CMA20E1600PZ-TRL
Виробник: IXYS
Description: SCR 1.6KV 31A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.46 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.6 kV
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CMA20E1600PB
CMA20E1600PB
Виробник: IXYS
Description: SCR 1.6KV 31A TO220
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CMA20E1600PZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA20E1600PZ.pdf
CMA20E1600PZ-TUB
Виробник: IXYS
Description: SCR 1.6KV 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.46 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.6 kV
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IXYH10N170C littelfusediscreteigbtsxptixyh10n170cdatashee.pdf
IXYH10N170C
Виробник: IXYS
Description: IGBT 1700V 36A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 17 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+784.64 грн
30+449.64 грн
120+382.49 грн
510+333.21 грн
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IXYH25N250CHV littelfuse_discrete_igbts_xpt_ixy_25n250chv_datasheet.pdf.pdf
IXYH25N250CHV
Виробник: IXYS
Description: IGBT 2500V 235A TO-247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1882.46 грн
30+1240.73 грн
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IXYH8N250CV1HV littelfuse_discrete_igbts_xpt_ixyh8n250cv1hv_datasheet.pdf.pdf
IXYH8N250CV1HV
Виробник: IXYS
Description: IGBT 2500V 29A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
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IXYH30N65C3 littelfuse_discrete_igbts_xpt_ixy_30n65c3_datasheet.pdf.pdf
IXYH30N65C3
Виробник: IXYS
Description: IGBT 650V 60A 270W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
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IXYH40N65C3D1 media?resourcetype=datasheets&itemid=097B1532-5263-463D-9683-6B0C7D39951B&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-40N65C3D1-Datasheet.PDF
IXYH40N65C3D1
Виробник: IXYS
Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/110ns
Switching Energy: 830µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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IXYH40N65B3D1 media?resourcetype=datasheets&itemid=CE930E34-1A02-46F8-85BC-52B83B11FC42&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-40N65B3D1-Datasheet.PDF
IXYH40N65B3D1
Виробник: IXYS
Description: IGBT 650V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 37 ns
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
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IXYH40N65C3H1 littelfuse-discrete-igbts-ixyh40n65c3h1-datasheet?assetguid=8988c00e-fa3d-4371-88c5-e1afd0817bb2
IXYH40N65C3H1
Виробник: IXYS
Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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IXYH40N65C3 littelfuse-discrete-igbts-ixyh40n65c3-datasheet?assetguid=09bd2958-7a8f-4ac3-9434-46d6ebaf6db3
IXYH40N65C3
Виробник: IXYS
Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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IXTV130N15T
IXTV130N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 130A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Supplier Device Package: PLUS220
Drain to Source Voltage (Vdss): 150 V
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IXGA30N60C3 media?resourcetype=datasheets&itemid=1c2e09fe-9002-469e-a60b-7957698727f8&filename=littelfuse_discrete_igbts_pt_ixg_30n60c3_datasheet.pdf
IXGA30N60C3
Виробник: IXYS
Description: IGBT 600V 60A 220W TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
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N6012ZD060 media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 600V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 600 V
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IXFA130N15X3TRL
IXFA130N15X3TRL
Виробник: IXYS
Description: MOSFET N-CH 150V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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IXFA130N15X3 DS100808B(IXFA-FP-FH130N15X3).pdf
IXFA130N15X3
Виробник: IXYS
Description: MOSFET N-CH 150V 130A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
на замовлення 1359 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+741.86 грн
50+570.71 грн
100+510.65 грн
500+422.84 грн
1000+380.56 грн
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A1237NC240
Виробник: IXYS
Description: SCR 2.4KV 2555A W11
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IXTT1N250HV-TRL littelfuse-discrete-mosfets-ixtt1n250hv-datasheet?assetguid=b97491fe-f9b5-41c0-b140-7e8b8600f646
IXTT1N250HV-TRL
Виробник: IXYS
Description: MOSFET N-CH 2500V 1.5A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
400+2363.26 грн
Мінімальне замовлення: 400
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IXFH14N100Q
Виробник: IXYS
Description: MOSFET N-CH 1000V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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MCC56-14IO1
MCC56-14IO1
Виробник: IXYS
Description: SCR MODULE 1.4KV 100A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 64 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.4 kV
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IXTA220N04T2-TRL PdfFile146995.pdf
IXTA220N04T2-TRL
Виробник: IXYS
Description: MOSFET N-CH 40V 220A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+139.16 грн
Мінімальне замовлення: 800
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CMA50E1600HB media?resourcetype=datasheets&itemid=f4358637-7c3d-484f-8bf1-dc9dd27d441c&filename=Littelfuse-Power-Semiconductors-CMA50E1600HB-Datasheet
CMA50E1600HB
Виробник: IXYS
Description: SCR 1.6KV 79A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
на замовлення 1209 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+519.39 грн
30+306.54 грн
120+262.08 грн
510+232.18 грн
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IXTY1R4N120PHV DS99871E(IXTY-TA-TP1R4N120P-HV).pdf
IXTY1R4N120PHV
Виробник: IXYS
Description: MOSFET N-CH 1200V 1.4A TO252
товару немає в наявності
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IXTY1R4N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 1.4A TO252
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IXTA1R4N120P-TRL
IXTA1R4N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 1.4A TO263
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DSEP15-06BS-TRL media?resourcetype=datasheets&itemid=4d29f41a-7db8-4582-9d68-5338de39840d&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06bs%2520datasheet.pdf
DSEP15-06BS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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DSEP15-06BS-TUB
DSEP15-06BS-TUB
Виробник: IXYS
Description: DIODE GEN PURP 600V 15A TO263
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IXFH50N85X DS100704DIXFTFHFK50N85XHV.pdf
IXFH50N85X
Виробник: IXYS
Description: MOSFET N-CH 850V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
на замовлення 906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1159.42 грн
30+725.84 грн
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IXYX40N450HV
IXYX40N450HV
Виробник: IXYS
Description: IGBT 4500V 95A TO-247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 660 W
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5294.84 грн
30+3883.15 грн
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MDMA425P1600PTSF
Виробник: IXYS
Description: DIODE MOD GP 1600V 425A SIMBUS F
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Technology: Standard
Current - Average Rectified (Io) (per Diode): 425A
Supplier Device Package: SimBus F
Voltage - DC Reverse (Vr) (Max): 1600 V
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MDMA425P1600PT-PC
Виробник: IXYS
Description: MDMA425P1600PTSF-PC
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IXTP12N50P Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-12N50P-Datasheet.PDF?assetguid=1EBA20B0-2CD4-4FB5-BDDC-FCD960E7D1DD
IXTP12N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+356.81 грн
50+178.16 грн
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DSEC16-12AS-TRL Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535
DSEC16-12AS-TRL
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 10A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.94 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
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IXTA08N100D2-TRL
IXTA08N100D2-TRL
Виробник: IXYS
Description: IXTA08N100D2 TRL
товару немає в наявності
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