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IXFH22N65X2 IXFH22N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_22n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
1+412.7 грн
30+ 317.07 грн
120+ 283.69 грн
IXFH34N65X2 IXFH34N65X2 IXYS DS100683C(IXFA-FP-FH34N65X2)_.pdf Description: MOSFET N-CH 650V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 25 V
на замовлення 385 шт:
термін постачання 21-31 дні (днів)
1+533.96 грн
30+ 410.75 грн
120+ 367.52 грн
IXFH46N65X2 IXFH46N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh46n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
1+679.33 грн
30+ 522.47 грн
120+ 467.47 грн
IXFH60N65X2 IXFH60N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh60n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V
товар відсутній
IXFH80N65X2 IXFH80N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
товар відсутній
IXFK100N65X2 IXFK100N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_100n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
товар відсутній
IXFX100N65X2 IXFX100N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_100n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 100A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
товар відсутній
IXFX120N65X2 IXFX120N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_120n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+1566.42 грн
IXFK120N65X2 IXFK120N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_120n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1566.42 грн
25+ 1250.1 грн
100+ 1171.97 грн
IXFB150N65X2 IXFB150N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfb150n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 150A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20400 pF @ 25 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
1+2242.91 грн
25+ 1790.2 грн
IXYL60N450 IXYL60N450 IXYS littelfuse_discrete_igbts_xpt_ixyl60n450_datasheet.pdf.pdf Description: IGBT 4500V 90A 417W I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 55ns/450ns
Test Condition: 960V, 60A, 4.7Ohm, 15V
Gate Charge: 366 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 680 A
Power - Max: 417 W
на замовлення 1151 шт:
термін постачання 21-31 дні (днів)
1+8333.45 грн
10+ 7428.2 грн
IXFP34N65X2 IXFP34N65X2 IXYS DS100683C(IXFA-FP-FH34N65X2)_.pdf Description: MOSFET N-CH 650V 34A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 25 V
товар відсутній
IXFK80N65X2 IXFK80N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 80A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
на замовлення 491 шт:
термін постачання 21-31 дні (днів)
1+1455.8 грн
25+ 1162.12 грн
100+ 1089.49 грн
IXFN120N65X2 IXFN120N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn120n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 108A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
1+2956.98 грн
10+ 2537.18 грн
100+ 2226.99 грн
IXFN150N65X2 IXFN150N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn150n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 145A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
на замовлення 770 шт:
термін постачання 21-31 дні (днів)
1+3349.12 грн
10+ 2932.21 грн
100+ 2639 грн
DMA50P1200HR DMA50P1200HR IXYS DMA50P1200HR.pdf Description: DIODE RECTIFIER 1.2KV 50A TO247
товар відсутній
DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Description: DIODE RECT FAST 1.2KV 30A TO247
товар відсутній
DSA320A100NB IXYS Description: DIODE ARRAY SCHOTTKY 100V TO227
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 80A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
товар відсутній
DSA600A150NB IXYS Description: DIODE ARRAY SCHOTTKY 150V TO227
товар відсутній
FMM150-0075X2F FMM150-0075X2F IXYS DS100186-(FMM150-0075X2F).pdf Description: MOSFET 2N-CH 75V 120A I4-PAC-5
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
1+1701.86 грн
10+ 1511.07 грн
100+ 1290.35 грн
IXA220I650NA IXYS IXA220I650NA.pdf Description: IGBT MODULE 650V SOT227
товар відсутній
IXA27IF1200HJ IXYS littelfuse_discrete_igbts_xpt_ixa27if1200hj_datasheet.pdf.pdf Description: IGBT MOD 1200V 43A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 100 µA
на замовлення 2130 шт:
термін постачання 21-31 дні (днів)
1+729.67 грн
10+ 618.86 грн
100+ 535.21 грн
500+ 455.19 грн
1000+ 417.52 грн
IXB80IF600NA IXB80IF600NA IXYS IXYS_Shortform2013.pdf Description: IGBT MODULE 600V 80A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input Type: Standard
Supplier Device Package: SOT-227B
IGBT Type: NPT, PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
товар відсутній
IXBF42N300 IXYS DS100325A(IXBF42N300).pdf Description: IGBT 3000V TO247
товар відсутній
IXBH10N300HV IXBH10N300HV IXYS littelfuse_discrete_igbts_bimosfet_ixb_10n300hv_datasheet.pdf.pdf Description: IGBT 3000V 20A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.6 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Supplier Device Package: TO-247HV (IXBH)
Td (on/off) @ 25°C: 36ns/100ns
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 180 W
товар відсутній
IXBL20N300C IXBL20N300C IXYS DS100553(IXBL20N300C).pdf Description: IGBT 3000V
товар відсутній
IXBOD2-04 IXYS IXBOD2.pdf Description: THYRISTOR RADIAL
Packaging: Box
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - Breakover: 400V
Supplier Device Package: FP-Case
Current - Hold (Ih): 20 mA
товар відсутній
IXBOD2-05 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
товар відсутній
IXBOD2-06 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
товар відсутній
IXBOD2-07 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
товар відсутній
IXBOD2-08 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
товар відсутній
IXBOD2-09 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
товар відсутній
IXBOD2-10 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
товар відсутній
IXBOD2-11 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
товар відсутній
IXBOD2-12 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
товар відсутній
IXBOD2-13 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
товар відсутній
IXBOD2-15R IXYS Description: BREAKOVER DIODE
товар відсутній
IXBOD2-50R IXYS Description: BREAKOVER DIODE
товар відсутній
IXBOD2-56R IXYS Description: THYRISTOR RADIAL
товар відсутній
IXBT12N300HV IXBT12N300HV IXYS littelfuse_discrete_igbts_bimosfet_ixb_12n300hv_datasheet.pdf.pdf Description: IGBT 3000V 30A 160W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 64ns/180ns
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
товар відсутній
IXBT42N300HV IXBT42N300HV IXYS littelfuse_discrete_igbts_bimosfet_ixb_42n300hv_datasheet.pdf.pdf Description: IGBT 3000V 42A 357W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 72ns/445ns
Test Condition: 1500V, 42A, 20Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 500 W
товар відсутній
IXBX64N250 IXBX64N250 IXYS DS99832B(IXBK-BX64N250).pdf Description: IGBT 2500V
товар відсутній
IXFA18N60X IXFA18N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_18n60x_datasheet.pdf.pdf Description: MOSFET N-CH 600V 18A TO263AA
товар відсутній
IXFA24N60X IXFA24N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_24n60x%20_datasheet.pdf.pdf Description: MOSFET N-CH 600V 24A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 25 V
товар відсутній
IXFA30N60X IXFA30N60X IXYS DS100667(IXFA-FP30N60X).pdf Description: MOSFET N-CH 600V 30A TO-263
товар відсутній
IXFA36N30P3 IXFA36N30P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n30p3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 36A TO263AA
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
1+360.23 грн
10+ 311.24 грн
100+ 255 грн
500+ 203.72 грн
IXFA76N15T2 IXYS DS100176B(IXFA-FP-FH76N15T2).pdf Description: MOSFET N-CH 150V 76A TO263
товар відсутній
IXFB40N110Q3 IXFB40N110Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb40n110q3_datasheet.pdf.pdf Description: MOSFET N-CH 1100V 40A PLUS264
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+3675.31 грн
10+ 3301.9 грн
IXFH18N60X IXFH18N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_18n60x_datasheet.pdf.pdf Description: MOSFET N-CH 600V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
товар відсутній
IXFH24N60X IXFH24N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_24n60x%20_datasheet.pdf.pdf Description: MOSFET N-CH 600V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 25 V
товар відсутній
IXFH30N60X IXFH30N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_30n60x_1of2_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
1+533.96 грн
30+ 410.75 грн
IXFH50N60X IXFH50N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n60x_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 25A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
товар відсутній
IXFH60N60X IXFH60N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_60n60x_datasheet.pdf.pdf Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IXFH80N30P3 IXFH80N30P3 IXYS Description: MOSFET N-CH 300V 80A TO-247
товар відсутній
IXFH94N30P3 IXFH94N30P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n30p3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
товар відсутній
IXFK90N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_90n60x_datasheet.pdf.pdf Description: MOSFET N-CH 600V 90A TO264
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
25+1244.57 грн
Мінімальне замовлення: 25
IXFN40N110Q3 IXFN40N110Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn40n110q3_datasheet.pdf.pdf Description: MOSFET N-CH 1100V 35A SOT-227B
товар відсутній
IXFN64N50PD3 IXFN64N50PD3 IXYS DS99507G(IXFN64N50PD2-D3).pdf Description: MOSFET N-CH 500V 50A SOT227B
товар відсутній
IXFP18N60X IXFP18N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_18n60x_datasheet.pdf.pdf Description: MOSFET N-CH 600V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
товар відсутній
IXFP230N075T2 IXFP230N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_230n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 230A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+514.1 грн
10+ 447.2 грн
IXFH22N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_22n65x2_datasheet.pdf.pdf
IXFH22N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+412.7 грн
30+ 317.07 грн
120+ 283.69 грн
IXFH34N65X2 DS100683C(IXFA-FP-FH34N65X2)_.pdf
IXFH34N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 25 V
на замовлення 385 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+533.96 грн
30+ 410.75 грн
120+ 367.52 грн
IXFH46N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh46n65x2_datasheet.pdf.pdf
IXFH46N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+679.33 грн
30+ 522.47 грн
120+ 467.47 грн
IXFH60N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh60n65x2_datasheet.pdf.pdf
IXFH60N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V
товар відсутній
IXFH80N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n65x2_datasheet.pdf.pdf
IXFH80N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
товар відсутній
IXFK100N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_100n65x2_datasheet.pdf.pdf
IXFK100N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
товар відсутній
IXFX100N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_100n65x2_datasheet.pdf.pdf
IXFX100N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 100A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
товар відсутній
IXFX120N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_120n65x2_datasheet.pdf.pdf
IXFX120N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1566.42 грн
IXFK120N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_120n65x2_datasheet.pdf.pdf
IXFK120N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1566.42 грн
25+ 1250.1 грн
100+ 1171.97 грн
IXFB150N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfb150n65x2_datasheet.pdf.pdf
IXFB150N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 150A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20400 pF @ 25 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2242.91 грн
25+ 1790.2 грн
IXYL60N450 littelfuse_discrete_igbts_xpt_ixyl60n450_datasheet.pdf.pdf
IXYL60N450
Виробник: IXYS
Description: IGBT 4500V 90A 417W I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 55ns/450ns
Test Condition: 960V, 60A, 4.7Ohm, 15V
Gate Charge: 366 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 680 A
Power - Max: 417 W
на замовлення 1151 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8333.45 грн
10+ 7428.2 грн
IXFP34N65X2 DS100683C(IXFA-FP-FH34N65X2)_.pdf
IXFP34N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 34A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 25 V
товар відсутній
IXFK80N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n65x2_datasheet.pdf.pdf
IXFK80N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
на замовлення 491 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1455.8 грн
25+ 1162.12 грн
100+ 1089.49 грн
IXFN120N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn120n65x2_datasheet.pdf.pdf
IXFN120N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 108A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2956.98 грн
10+ 2537.18 грн
100+ 2226.99 грн
IXFN150N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn150n65x2_datasheet.pdf.pdf
IXFN150N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 145A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
на замовлення 770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3349.12 грн
10+ 2932.21 грн
100+ 2639 грн
DMA50P1200HR DMA50P1200HR.pdf
DMA50P1200HR
Виробник: IXYS
Description: DIODE RECTIFIER 1.2KV 50A TO247
товар відсутній
DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Виробник: IXYS
Description: DIODE RECT FAST 1.2KV 30A TO247
товар відсутній
DSA320A100NB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 100V TO227
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 80A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
товар відсутній
DSA600A150NB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V TO227
товар відсутній
FMM150-0075X2F DS100186-(FMM150-0075X2F).pdf
FMM150-0075X2F
Виробник: IXYS
Description: MOSFET 2N-CH 75V 120A I4-PAC-5
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1701.86 грн
10+ 1511.07 грн
100+ 1290.35 грн
IXA220I650NA IXA220I650NA.pdf
Виробник: IXYS
Description: IGBT MODULE 650V SOT227
товар відсутній
IXA27IF1200HJ littelfuse_discrete_igbts_xpt_ixa27if1200hj_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT MOD 1200V 43A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 100 µA
на замовлення 2130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+729.67 грн
10+ 618.86 грн
100+ 535.21 грн
500+ 455.19 грн
1000+ 417.52 грн
IXB80IF600NA IXYS_Shortform2013.pdf
IXB80IF600NA
Виробник: IXYS
Description: IGBT MODULE 600V 80A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input Type: Standard
Supplier Device Package: SOT-227B
IGBT Type: NPT, PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
товар відсутній
IXBF42N300 DS100325A(IXBF42N300).pdf
Виробник: IXYS
Description: IGBT 3000V TO247
товар відсутній
IXBH10N300HV littelfuse_discrete_igbts_bimosfet_ixb_10n300hv_datasheet.pdf.pdf
IXBH10N300HV
Виробник: IXYS
Description: IGBT 3000V 20A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.6 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Supplier Device Package: TO-247HV (IXBH)
Td (on/off) @ 25°C: 36ns/100ns
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 180 W
товар відсутній
IXBL20N300C DS100553(IXBL20N300C).pdf
IXBL20N300C
Виробник: IXYS
Description: IGBT 3000V
товар відсутній
IXBOD2-04 IXBOD2.pdf
Виробник: IXYS
Description: THYRISTOR RADIAL
Packaging: Box
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - Breakover: 400V
Supplier Device Package: FP-Case
Current - Hold (Ih): 20 mA
товар відсутній
IXBOD2-05 IXBOD2.pdf
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-06 IXBOD2.pdf
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-07 IXBOD2.pdf
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-08 IXBOD2.pdf
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-09 IXBOD2.pdf
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-10 IXBOD2.pdf
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-11 IXBOD2.pdf
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-12 IXBOD2.pdf
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-13 IXBOD2.pdf
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-15R
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-50R
Виробник: IXYS
Description: BREAKOVER DIODE
товар відсутній
IXBOD2-56R
Виробник: IXYS
Description: THYRISTOR RADIAL
товар відсутній
IXBT12N300HV littelfuse_discrete_igbts_bimosfet_ixb_12n300hv_datasheet.pdf.pdf
IXBT12N300HV
Виробник: IXYS
Description: IGBT 3000V 30A 160W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 64ns/180ns
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
товар відсутній
IXBT42N300HV littelfuse_discrete_igbts_bimosfet_ixb_42n300hv_datasheet.pdf.pdf
IXBT42N300HV
Виробник: IXYS
Description: IGBT 3000V 42A 357W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 72ns/445ns
Test Condition: 1500V, 42A, 20Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 500 W
товар відсутній
IXBX64N250 DS99832B(IXBK-BX64N250).pdf
IXBX64N250
Виробник: IXYS
Description: IGBT 2500V
товар відсутній
IXFA18N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_18n60x_datasheet.pdf.pdf
IXFA18N60X
Виробник: IXYS
Description: MOSFET N-CH 600V 18A TO263AA
товар відсутній
IXFA24N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_24n60x%20_datasheet.pdf.pdf
IXFA24N60X
Виробник: IXYS
Description: MOSFET N-CH 600V 24A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 25 V
товар відсутній
IXFA30N60X DS100667(IXFA-FP30N60X).pdf
IXFA30N60X
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO-263
товар відсутній
IXFA36N30P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n30p3_datasheet.pdf.pdf
IXFA36N30P3
Виробник: IXYS
Description: MOSFET N-CH 300V 36A TO263AA
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+360.23 грн
10+ 311.24 грн
100+ 255 грн
500+ 203.72 грн
IXFA76N15T2 DS100176B(IXFA-FP-FH76N15T2).pdf
Виробник: IXYS
Description: MOSFET N-CH 150V 76A TO263
товар відсутній
IXFB40N110Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb40n110q3_datasheet.pdf.pdf
IXFB40N110Q3
Виробник: IXYS
Description: MOSFET N-CH 1100V 40A PLUS264
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3675.31 грн
10+ 3301.9 грн
IXFH18N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_18n60x_datasheet.pdf.pdf
IXFH18N60X
Виробник: IXYS
Description: MOSFET N-CH 600V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
товар відсутній
IXFH24N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_24n60x%20_datasheet.pdf.pdf
IXFH24N60X
Виробник: IXYS
Description: MOSFET N-CH 600V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 25 V
товар відсутній
IXFH30N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_30n60x_1of2_datasheet.pdf.pdf
IXFH30N60X
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+533.96 грн
30+ 410.75 грн
IXFH50N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n60x_datasheet.pdf.pdf
IXFH50N60X
Виробник: IXYS
Description: MOSFET N-CH 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 25A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
товар відсутній
IXFH60N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_60n60x_datasheet.pdf.pdf
IXFH60N60X
Виробник: IXYS
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IXFH80N30P3
IXFH80N30P3
Виробник: IXYS
Description: MOSFET N-CH 300V 80A TO-247
товар відсутній
IXFH94N30P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n30p3_datasheet.pdf.pdf
IXFH94N30P3
Виробник: IXYS
Description: MOSFET N-CH 300V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
товар відсутній
IXFK90N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_90n60x_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 90A TO264
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+1244.57 грн
Мінімальне замовлення: 25
IXFN40N110Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn40n110q3_datasheet.pdf.pdf
IXFN40N110Q3
Виробник: IXYS
Description: MOSFET N-CH 1100V 35A SOT-227B
товар відсутній
IXFN64N50PD3 DS99507G(IXFN64N50PD2-D3).pdf
IXFN64N50PD3
Виробник: IXYS
Description: MOSFET N-CH 500V 50A SOT227B
товар відсутній
IXFP18N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_18n60x_datasheet.pdf.pdf
IXFP18N60X
Виробник: IXYS
Description: MOSFET N-CH 600V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
товар відсутній
IXFP230N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_230n075t2_datasheet.pdf.pdf
IXFP230N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 230A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+514.1 грн
10+ 447.2 грн
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