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IXFA3N120-TRR IXFA3N120-TRR IXYS Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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MCC95-14IO1 MCC95-14IO1 IXYS littelfuse-power-semiconductors-mcc95-14io1-datasheet?assetguid=7454aafc-45a9-4439-be28-a68a9e0ca580 Description: SCR MODULE 1.4KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.4 kV
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
1+2945.68 грн
36+1925.91 грн
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MCC95-16IO1 MCC95-16IO1 IXYS Description: SCR MODULE 1.6KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.6 kV
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MMIX1X340N65B4 IXYS DS100598A(MMIX1X340N65B4).pdf Description: MOSFET N-CH
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
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IXA4I1200UC-TRL IXA4I1200UC-TRL IXYS IXA4I1200UC.pdf Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4IF1200UC-TRL IXA4IF1200UC-TRL IXYS littelfuse_discrete_igbts_xpt_ixa4if1200uc_datasheet.pdf.pdf Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4I1200UC-TUB IXYS media?resourcetype=datasheets&itemid=d9845082-6932-4641-bff2-4975637e4e13&filename=littelfuse%2520power%2520semiconductors%2520ixa4i1200uc%2520datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-252D
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
на замовлення 1260 шт:
термін постачання 21-31 дні (днів)
350+103.85 грн
Мінімальне замовлення: 350
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IXA4IF1200UC-TUB IXYS Description: DISC IGBT XPT-GENX3 TO-252D
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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DSEI2X60-04C DSEI2X60-04C IXYS media?resourcetype=datasheets&itemid=09f9b2c2-a97d-49db-a728-472a9e688f56&filename=littelfuse%2520power%2520semiconductors%2520dsei2x60-04c%2520datasheet.pdf Description: DIODE MODULE GP 400V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 400 V
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DCG17P1200HR IXYS Description: POWER DIODE DISC-SCHOTTKY ISOPLU
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IXFR16N90Q IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
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DSP8-12S-TRL DSP8-12S-TRL IXYS DSP8-12S.pdf Description: DIODE ARRAY GP 1200V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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DSEP29-06AS-TRL DSEP29-06AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060 Description: DIODE STANDARD 600V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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DSEP29-06AS-TUB DSEP29-06AS-TUB IXYS Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060 Description: DIODE ARRAY GP 600V TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.94 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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DLA40IM800PC-TUB DLA40IM800PC-TUB IXYS DLA40IM800PC.pdf Description: DIODE GEN PURP 800V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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IXTF6N200P3 IXYS DS100716(IXTF6N200P3).pdf Description: MOSFET N-CH
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IXTF2N300P3 IXYS DS100712(IXTF2N300P3).pdf Description: MOSFET N-CH
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
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IXFR20N80Q IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
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IXFX20N80Q IXFX20N80Q IXYS Description: MOSFET N-CH 800V 20A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
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IXYP24N100C4 IXYP24N100C4 IXYS media?resourcetype=datasheets&itemid=9e764d41-4809-4a1d-9928-1cb6ca6c9107&filename=littelfuse_discrete_igbts_xpt_ixy_24n100c4_datasheet.pdf Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/147ns
Switching Energy: 3.6mJ (on), 1mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 132 A
Power - Max: 375 W
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IXFN24N100F IXFN24N100F IXYS description Description: MOSFET N-CH 1000V 24A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IXFX24N100F IXFX24N100F IXYS Description: MOSFET N-CH 1000V 24A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IXTY08N100P-TRL IXYS Description: IXTY08N100P TRL
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS littelfuse-discrete-igbts-ixyh75n65c3h1-datasheet?assetguid=224dfb65-7587-4f7c-8b16-0c4c9033fed6 Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)
1+1240.78 грн
30+741.00 грн
120+646.86 грн
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IXYH75N65C3 IXYH75N65C3 IXYS media?resourcetype=datasheets&itemid=880AF1F0-BCE9-40BF-B617-AC7060048A7A&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH75N65C3-Datasheet.PDF Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
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IXYH50N65C3D1 IXYH50N65C3D1 IXYS media?resourcetype=datasheets&itemid=834EE2EA-9CEA-402F-8D05-EFCC34AF555B&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH50N65C3D1-Datasheet.PDF Description: IGBT 650V 132A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 800µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
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IXFN27N120SK IXYS Description: SICARBIDE-DISCRETE MOSFET SOT-22
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MIXA80W1200PTEH IXYS Description: IGBT MODULE SIXPACK E3-PACK-PF
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IXFY30N25X3 IXFY30N25X3 IXYS littelfuse-discrete-mosfets-ixf-30n25x3-datasheet?assetguid=f98c5907-f43b-4415-a418-45a0a7855e6d Description: MOSFET N-CH 250V 30A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 6203 шт:
термін постачання 21-31 дні (днів)
1+578.24 грн
70+289.34 грн
140+266.73 грн
560+222.67 грн
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IXTQ36P15P IXTQ36P15P IXYS littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86 Description: MOSFET P-CH 150V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
на замовлення 895 шт:
термін постачання 21-31 дні (днів)
1+628.48 грн
30+330.70 грн
120+298.33 грн
510+249.27 грн
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IXFP14N55X2 IXYS Description: IXFP14N55X2
Packaging: Tube
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IXFP14N55X2M IXYS Description: IXFP14N55X2M
Packaging: Tube
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IXFK21N100F IXFK21N100F IXYS DS98880A(IXFK-FX21N100F).pdf Description: MOSFET N-CH 1000V 21A TO264
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IXTM1630 IXYS Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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N4845EE320 IXYS media?resourcetype=datasheets&amp;itemid=a38836a5-5e37-4579-bbbb-5cc2031dee94&amp;filename=littelfuse_discrete_thyristors_phase_control_n4845ee3_0_datasheet.pdf Description: SCR 3.2KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz
Current - On State (It (AV)) (Max): 4845 A
Supplier Device Package: W108
Voltage - Off State: 3.2 kV
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IXYT55N120A4HV IXYT55N120A4HV IXYS 014125.pdf Description: IGBT PT 1200V 175A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
1+1042.36 грн
30+612.58 грн
120+526.91 грн
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IXYH55N120A4 IXYH55N120A4 IXYS littelfuse-discrete-igbts-xpt-ixyh55n120a4-datasheet?assetguid=7cc37be0-870e-4788-8cf1-9672fa37c982 Description: IGBT PT 1200V 175A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
на замовлення 563 шт:
термін постачання 21-31 дні (днів)
1+852.45 грн
30+492.12 грн
120+420.12 грн
510+372.35 грн
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IXYH85N120A4 IXYH85N120A4 IXYS littelfuse-discrete-igbts-xpt-ixyh85n120a4-datasheet?assetguid=f5249e62-6772-4617-a066-4441b1dbab32 Description: IGBT PT 1200V 300A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
1+1406.84 грн
30+847.78 грн
120+755.72 грн
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IXTY48P05T-TRL IXTY48P05T-TRL IXYS littelfusediscretemosfetspchannelixt48p05td.pdf Description: MOSFET P-CH 50V 48A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
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IXTA48P05T-TRL IXTA48P05T-TRL IXYS littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16 Description: MOSFET P-CH 50V 48A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
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IXYK140N120A4 IXYK140N120A4 IXYS IXYK140N120A4_DS.pdf Description: IGBT PT 1200V 480A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
1+3235.22 грн
25+2155.97 грн
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IXYX140N120A4 IXYX140N120A4 IXYS IXYX140N120A4_DS.pdf Description: IGBT PT 1200V 480A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+3354.45 грн
30+2255.19 грн
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IXYN140N120A4 IXYN140N120A4 IXYS littelfuse-discrete-igbts-xpt-ixyn140n120a4-datasheet?assetguid=13a5ea28-9028-4ba7-bc80-764d7c886511 Description: IGBT MODULE 1200V 380A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
1+3964.19 грн
10+2899.64 грн
100+2770.18 грн
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IXTA3N110-TRL IXTA3N110-TRL IXYS Description: IXTA3N110 TRL
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IXFA80N25X3TRL IXFA80N25X3TRL IXYS Description: MOSFET N-CH 250V 80A X3CLASS TO-
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
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IXFH80N25X3 IXFH80N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 2001 шт:
термін постачання 21-31 дні (днів)
1+1014.25 грн
10+882.05 грн
100+730.25 грн
500+596.76 грн
1000+519.76 грн
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MCC26-14IO1 IXYS Description: BIPOLAR MODULE - THYRISTOR TO-2
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IXGT32N170-TRL IXGT32N170-TRL IXYS PdfFile324374.pdf Description: IGBT NPT 1700V 75A TO-268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 11mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
400+1388.10 грн
Мінімальне замовлення: 400
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IXYH10N170CV1 IXYH10N170CV1 IXYS Littelfuse-Discrete-IGBTs-XPT-IXYH10N170CV1-Datasheet.PDF?assetguid=19D287B4-5C8A-4D57-AF55-0AFDED612E1D Description: IGBT 1700V 36A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 466 шт:
термін постачання 21-31 дні (днів)
1+1055.13 грн
30+620.10 грн
120+533.47 грн
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IXYH24N170CV1 IXYH24N170CV1 IXYS media?resourcetype=datasheets&itemid=50271284-6150-4065-87d9-fe039e795f51&filename=littelfuse_discrete_igbts_xpt_ixyh24n170cv1_datasheet.pdf Description: IGBT 1700V 58A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 24A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 16ns/155ns
Switching Energy: 3.6mJ (on), 1.76mJ (off)
Test Condition: 850V, 24A, 5Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 500 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
1+1232.26 грн
30+727.53 грн
120+626.98 грн
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IXYH24N170C IXYH24N170C IXYS IXYH24N170C.pdf Description: IGBT 1700V 58A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/160ns
Switching Energy: 4.9mJ (on), 1.95mJ (off)
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 427 шт:
термін постачання 21-31 дні (днів)
1+926.54 грн
30+673.46 грн
120+612.31 грн
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IXYH30N170C IXYH30N170C IXYS littelfuse_discrete_igbts_xpt_ixyh30n170c_datasheet.pdf.pdf Description: 1700V/108A HIGH VOLTAGE XPT IGB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
300+654.11 грн
Мінімальне замовлення: 300
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DSEI36-06AS-TRL DSEI36-06AS-TRL IXYS littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff Description: DIODE STANDARD 600V 37A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+204.49 грн
Мінімальне замовлення: 800
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DSEI36-06AS-TRL DSEI36-06AS-TRL IXYS littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff Description: DIODE STANDARD 600V 37A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 2069 шт:
термін постачання 21-31 дні (днів)
1+462.42 грн
10+302.85 грн
100+241.02 грн
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IXFT40N85XHV IXFT40N85XHV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_40n85x_datasheet.pdf.pdf Description: MOSFET N-CH 850V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
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IXBK64N250 IXBK64N250 IXYS littelfuse-discrete-igbts-ixb-64n250-datasheet?assetguid=6f198893-d712-49ff-908d-12cba0a8ef2b Description: IGBT 2500V 75A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+7821.08 грн
25+6322.88 грн
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IXTA1N200P3HVTRL IXTA1N200P3HVTRL IXYS Description: MOFET N-CH 2000V 1.0A TO-263HV
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IXTA1N200P3HVTRL IXTA1N200P3HVTRL IXYS Description: MOFET N-CH 2000V 1.0A TO-263HV
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
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MCC132-16IO1B MCC132-16IO1B IXYS media?resourcetype=datasheets&amp;itemid=469670e0-e5d5-41ad-b104-35c18b54f920&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc132-16io1b%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
6+4433.28 грн
Мінімальне замовлення: 6
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MCC132-18IO1B MCC132-18IO1B IXYS media?resourcetype=datasheets&amp;itemid=8adc3d6a-68c4-40b6-b632-7058faa38df4&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc132-18io1b%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.8 kV
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IXFA3N120-TRR
IXFA3N120-TRR
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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MCC95-14IO1 littelfuse-power-semiconductors-mcc95-14io1-datasheet?assetguid=7454aafc-45a9-4439-be28-a68a9e0ca580
MCC95-14IO1
Виробник: IXYS
Description: SCR MODULE 1.4KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.4 kV
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2945.68 грн
36+1925.91 грн
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MCC95-16IO1
MCC95-16IO1
Виробник: IXYS
Description: SCR MODULE 1.6KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.6 kV
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MMIX1X340N65B4 DS100598A(MMIX1X340N65B4).pdf
Виробник: IXYS
Description: MOSFET N-CH
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
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IXA4I1200UC-TRL IXA4I1200UC.pdf
IXA4I1200UC-TRL
Виробник: IXYS
Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4IF1200UC-TRL littelfuse_discrete_igbts_xpt_ixa4if1200uc_datasheet.pdf.pdf
IXA4IF1200UC-TRL
Виробник: IXYS
Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4I1200UC-TUB media?resourcetype=datasheets&itemid=d9845082-6932-4641-bff2-4975637e4e13&filename=littelfuse%2520power%2520semiconductors%2520ixa4i1200uc%2520datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-252D
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
на замовлення 1260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
350+103.85 грн
Мінімальне замовлення: 350
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IXA4IF1200UC-TUB
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-252D
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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DSEI2X60-04C media?resourcetype=datasheets&itemid=09f9b2c2-a97d-49db-a728-472a9e688f56&filename=littelfuse%2520power%2520semiconductors%2520dsei2x60-04c%2520datasheet.pdf
DSEI2X60-04C
Виробник: IXYS
Description: DIODE MODULE GP 400V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 400 V
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DCG17P1200HR
Виробник: IXYS
Description: POWER DIODE DISC-SCHOTTKY ISOPLU
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IXFR16N90Q
Виробник: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
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DSP8-12S-TRL DSP8-12S.pdf
DSP8-12S-TRL
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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DSEP29-06AS-TRL Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060
DSEP29-06AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 600V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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DSEP29-06AS-TUB Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060
DSEP29-06AS-TUB
Виробник: IXYS
Description: DIODE ARRAY GP 600V TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.94 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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DLA40IM800PC-TUB DLA40IM800PC.pdf
DLA40IM800PC-TUB
Виробник: IXYS
Description: DIODE GEN PURP 800V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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IXTF6N200P3 DS100716(IXTF6N200P3).pdf
Виробник: IXYS
Description: MOSFET N-CH
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IXTF2N300P3 DS100712(IXTF2N300P3).pdf
Виробник: IXYS
Description: MOSFET N-CH
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
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IXFR20N80Q
Виробник: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
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IXFX20N80Q
IXFX20N80Q
Виробник: IXYS
Description: MOSFET N-CH 800V 20A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
товару немає в наявності
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IXYP24N100C4 media?resourcetype=datasheets&itemid=9e764d41-4809-4a1d-9928-1cb6ca6c9107&filename=littelfuse_discrete_igbts_xpt_ixy_24n100c4_datasheet.pdf
IXYP24N100C4
Виробник: IXYS
Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/147ns
Switching Energy: 3.6mJ (on), 1mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 132 A
Power - Max: 375 W
товару немає в наявності
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IXFN24N100F description
IXFN24N100F
Виробник: IXYS
Description: MOSFET N-CH 1000V 24A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IXFX24N100F
IXFX24N100F
Виробник: IXYS
Description: MOSFET N-CH 1000V 24A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IXTY08N100P-TRL
Виробник: IXYS
Description: IXTY08N100P TRL
товару немає в наявності
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IXYH75N65C3H1 littelfuse-discrete-igbts-ixyh75n65c3h1-datasheet?assetguid=224dfb65-7587-4f7c-8b16-0c4c9033fed6
IXYH75N65C3H1
Виробник: IXYS
Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1240.78 грн
30+741.00 грн
120+646.86 грн
В кошику  од. на суму  грн.
IXYH75N65C3 media?resourcetype=datasheets&itemid=880AF1F0-BCE9-40BF-B617-AC7060048A7A&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH75N65C3-Datasheet.PDF
IXYH75N65C3
Виробник: IXYS
Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
товару немає в наявності
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IXYH50N65C3D1 media?resourcetype=datasheets&itemid=834EE2EA-9CEA-402F-8D05-EFCC34AF555B&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH50N65C3D1-Datasheet.PDF
IXYH50N65C3D1
Виробник: IXYS
Description: IGBT 650V 132A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 800µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
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IXFN27N120SK
Виробник: IXYS
Description: SICARBIDE-DISCRETE MOSFET SOT-22
товару немає в наявності
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MIXA80W1200PTEH
Виробник: IXYS
Description: IGBT MODULE SIXPACK E3-PACK-PF
товару немає в наявності
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IXFY30N25X3 littelfuse-discrete-mosfets-ixf-30n25x3-datasheet?assetguid=f98c5907-f43b-4415-a418-45a0a7855e6d
IXFY30N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 30A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 6203 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+578.24 грн
70+289.34 грн
140+266.73 грн
560+222.67 грн
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IXTQ36P15P littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86
IXTQ36P15P
Виробник: IXYS
Description: MOSFET P-CH 150V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
на замовлення 895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+628.48 грн
30+330.70 грн
120+298.33 грн
510+249.27 грн
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IXFP14N55X2
Виробник: IXYS
Description: IXFP14N55X2
Packaging: Tube
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IXFP14N55X2M
Виробник: IXYS
Description: IXFP14N55X2M
Packaging: Tube
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IXFK21N100F DS98880A(IXFK-FX21N100F).pdf
IXFK21N100F
Виробник: IXYS
Description: MOSFET N-CH 1000V 21A TO264
товару немає в наявності
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IXTM1630
Виробник: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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N4845EE320 media?resourcetype=datasheets&amp;itemid=a38836a5-5e37-4579-bbbb-5cc2031dee94&amp;filename=littelfuse_discrete_thyristors_phase_control_n4845ee3_0_datasheet.pdf
Виробник: IXYS
Description: SCR 3.2KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz
Current - On State (It (AV)) (Max): 4845 A
Supplier Device Package: W108
Voltage - Off State: 3.2 kV
товару немає в наявності
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IXYT55N120A4HV 014125.pdf
IXYT55N120A4HV
Виробник: IXYS
Description: IGBT PT 1200V 175A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1042.36 грн
30+612.58 грн
120+526.91 грн
В кошику  од. на суму  грн.
IXYH55N120A4 littelfuse-discrete-igbts-xpt-ixyh55n120a4-datasheet?assetguid=7cc37be0-870e-4788-8cf1-9672fa37c982
IXYH55N120A4
Виробник: IXYS
Description: IGBT PT 1200V 175A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
на замовлення 563 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+852.45 грн
30+492.12 грн
120+420.12 грн
510+372.35 грн
В кошику  од. на суму  грн.
IXYH85N120A4 littelfuse-discrete-igbts-xpt-ixyh85n120a4-datasheet?assetguid=f5249e62-6772-4617-a066-4441b1dbab32
IXYH85N120A4
Виробник: IXYS
Description: IGBT PT 1200V 300A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1406.84 грн
30+847.78 грн
120+755.72 грн
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IXTY48P05T-TRL littelfusediscretemosfetspchannelixt48p05td.pdf
IXTY48P05T-TRL
Виробник: IXYS
Description: MOSFET P-CH 50V 48A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
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IXTA48P05T-TRL littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16
IXTA48P05T-TRL
Виробник: IXYS
Description: MOSFET P-CH 50V 48A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
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IXYK140N120A4 IXYK140N120A4_DS.pdf
IXYK140N120A4
Виробник: IXYS
Description: IGBT PT 1200V 480A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3235.22 грн
25+2155.97 грн
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IXYX140N120A4 IXYX140N120A4_DS.pdf
IXYX140N120A4
Виробник: IXYS
Description: IGBT PT 1200V 480A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3354.45 грн
30+2255.19 грн
В кошику  од. на суму  грн.
IXYN140N120A4 littelfuse-discrete-igbts-xpt-ixyn140n120a4-datasheet?assetguid=13a5ea28-9028-4ba7-bc80-764d7c886511
IXYN140N120A4
Виробник: IXYS
Description: IGBT MODULE 1200V 380A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3964.19 грн
10+2899.64 грн
100+2770.18 грн
В кошику  од. на суму  грн.
IXTA3N110-TRL
IXTA3N110-TRL
Виробник: IXYS
Description: IXTA3N110 TRL
товару немає в наявності
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IXFA80N25X3TRL
IXFA80N25X3TRL
Виробник: IXYS
Description: MOSFET N-CH 250V 80A X3CLASS TO-
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXFH80N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf
IXFH80N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 2001 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1014.25 грн
10+882.05 грн
100+730.25 грн
500+596.76 грн
1000+519.76 грн
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MCC26-14IO1
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
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IXGT32N170-TRL PdfFile324374.pdf
IXGT32N170-TRL
Виробник: IXYS
Description: IGBT NPT 1700V 75A TO-268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 11mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
400+1388.10 грн
Мінімальне замовлення: 400
В кошику  од. на суму  грн.
IXYH10N170CV1 Littelfuse-Discrete-IGBTs-XPT-IXYH10N170CV1-Datasheet.PDF?assetguid=19D287B4-5C8A-4D57-AF55-0AFDED612E1D
IXYH10N170CV1
Виробник: IXYS
Description: IGBT 1700V 36A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 466 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1055.13 грн
30+620.10 грн
120+533.47 грн
В кошику  од. на суму  грн.
IXYH24N170CV1 media?resourcetype=datasheets&itemid=50271284-6150-4065-87d9-fe039e795f51&filename=littelfuse_discrete_igbts_xpt_ixyh24n170cv1_datasheet.pdf
IXYH24N170CV1
Виробник: IXYS
Description: IGBT 1700V 58A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 24A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 16ns/155ns
Switching Energy: 3.6mJ (on), 1.76mJ (off)
Test Condition: 850V, 24A, 5Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 500 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1232.26 грн
30+727.53 грн
120+626.98 грн
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IXYH24N170C IXYH24N170C.pdf
IXYH24N170C
Виробник: IXYS
Description: IGBT 1700V 58A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/160ns
Switching Energy: 4.9mJ (on), 1.95mJ (off)
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 427 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+926.54 грн
30+673.46 грн
120+612.31 грн
В кошику  од. на суму  грн.
IXYH30N170C littelfuse_discrete_igbts_xpt_ixyh30n170c_datasheet.pdf.pdf
IXYH30N170C
Виробник: IXYS
Description: 1700V/108A HIGH VOLTAGE XPT IGB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+654.11 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
DSEI36-06AS-TRL littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff
DSEI36-06AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 600V 37A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+204.49 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
DSEI36-06AS-TRL littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff
DSEI36-06AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 600V 37A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 2069 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+462.42 грн
10+302.85 грн
100+241.02 грн
В кошику  од. на суму  грн.
IXFT40N85XHV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_40n85x_datasheet.pdf.pdf
IXFT40N85XHV
Виробник: IXYS
Description: MOSFET N-CH 850V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товару немає в наявності
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IXBK64N250 littelfuse-discrete-igbts-ixb-64n250-datasheet?assetguid=6f198893-d712-49ff-908d-12cba0a8ef2b
IXBK64N250
Виробник: IXYS
Description: IGBT 2500V 75A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7821.08 грн
25+6322.88 грн
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IXTA1N200P3HVTRL
IXTA1N200P3HVTRL
Виробник: IXYS
Description: MOFET N-CH 2000V 1.0A TO-263HV
товару немає в наявності
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IXTA1N200P3HVTRL
IXTA1N200P3HVTRL
Виробник: IXYS
Description: MOFET N-CH 2000V 1.0A TO-263HV
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MCC132-16IO1B media?resourcetype=datasheets&amp;itemid=469670e0-e5d5-41ad-b104-35c18b54f920&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc132-16io1b%2520datasheet.pdf
MCC132-16IO1B
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+4433.28 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCC132-18IO1B media?resourcetype=datasheets&amp;itemid=8adc3d6a-68c4-40b6-b632-7058faa38df4&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc132-18io1b%2520datasheet.pdf
MCC132-18IO1B
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.8 kV
товару немає в наявності
В кошику  од. на суму  грн.
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