| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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2SK932-24-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 14.5mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 217 шт: термін постачання 14-30 дні (днів) |
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2SK932-23-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FSA2275UMX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Supply voltage: 2.5...5.5V DC Type of integrated circuit: analog switch Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Number of channels: 2 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FSA2259UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; CMOS,TTL Mounting: SMD Case: UMLP10 Operating temperature: -40...85°C Kind of output: SPDT x2 Supply voltage: 1.65...4.4V DC Number of channels: 2 Type of integrated circuit: analog switch Technology: CMOS; TTL |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FSA2268L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; TTL; OUT: SPDT x2 Mounting: SMD Case: MicroPak10 Operating temperature: -40...85°C Kind of output: SPDT x2 Supply voltage: 1.65...4.3V DC Number of channels: 2 Type of integrated circuit: analog switch Technology: TTL |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FSA2268UMX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL Mounting: SMD Case: UMLP10 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: SPDT x2 Quiescent current: 500nA Supply voltage: 1.65...4.3V DC Number of channels: 2 Type of integrated circuit: analog switch Technology: TTL |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FSA2275AUMX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Supply voltage: 2.5...5.5V DC Type of integrated circuit: analog switch Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Number of channels: 2 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FSA2276UMX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Type of integrated circuit: analog switch Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Number of channels: 2 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NV25320DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Case: TSSOP8 Mounting: SMD Interface: SPI Operating temperature: -40...150°C Kind of interface: serial Kind of package: reel; tape Access time: 40ns Operating voltage: 2.5...5.5V Memory: 32kb EEPROM Memory organisation: 4kx8bit Clock frequency: 10MHz Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| PRISM1M-AR0830CSSC130110-GEVB | ONSEMI |
Category: Microchip development kits Description: PRISM1M-AR0830CSSC130110-GEVB |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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| PRISM1M-AR1223NPSC130110-GEVB | ONSEMI |
Category: UnclassifiedDescription: PRISM1M-AR1223NPSC130110-GEVB |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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BSR14 | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.8A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.8A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 3310 шт: термін постачання 14-30 дні (днів) |
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| NTMS4177PR2G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11.4A Pulsed drain current: -46A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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SBE805-TL-W | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape Capacitance: 16pF Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Case: SOT25 Reverse recovery time: 10ns Leakage current: 30µA Load current: 0.5A Max. forward voltage: 0.55V Max. forward impulse current: 5A Max. off-state voltage: 30V Semiconductor structure: double independent |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DTC123JET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC123TET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2/0.3W Case: SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Current gain: 160...350 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DTC123JM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MURS140T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Kind of package: reel; tape |
на замовлення 1233 шт: термін постачання 14-30 дні (днів) |
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MURS105T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.875V Kind of package: reel; tape |
на замовлення 2418 шт: термін постачання 14-30 дні (днів) |
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MURS110T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Case: SMB Mounting: SMD Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.875V Kind of package: reel; tape Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FDMS007N08LC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 53A Pulsed drain current: 345A Power dissipation: 92.6W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BZX79C5V1-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; Ammo Pack; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVDTC123JET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 80...140 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2N7002V | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV8406ASTT1G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.46Ω Kind of package: reel; tape Supply voltage: 60V DC Application: automotive industry |
на замовлення 542 шт: термін постачання 14-30 дні (днів) |
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MC74LVX4051DTG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Manufacturer series: LVX Technology: CMOS Number of inputs: 8 Family: LVX Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer |
на замовлення 119 шт: термін постачання 14-30 дні (днів) |
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MC74LVX4051DG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Number of channels: 1 Case: SOIC16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Manufacturer series: LVX Technology: CMOS Number of inputs: 8 Family: LVX Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74LVX4051DR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Number of channels: 1 Case: SOIC16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Manufacturer series: LVX Technology: CMOS Number of inputs: 8 Family: LVX Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74LVX4051DTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Manufacturer series: LVX Technology: CMOS Number of inputs: 8 Family: LVX Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| FSV15100V | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 250A Kind of package: reel; tape |
на замовлення 3096 шт: термін постачання 14-30 дні (днів) |
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| NTLJS3D0N02P8ZTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 20.2A; Idm: 81A; 2.4W; WDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 20.2A Pulsed drain current: 81A Power dissipation: 2.4W Case: WDFN6 Gate-source voltage: ±12V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MC14052BDTR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer,SPDT; 4: 1; Ch: 2 Type of integrated circuit: analog switch Output configuration: 4:1 Number of channels: 2 Case: TSSOP16 Supply voltage: 3...18V Mounting: SMD Resistance: 80Ω Operating temperature: -55...125°C Quiescent current: 600µA Kind of integrated circuit: demultiplexer; multiplexer; SPDT Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14052BDR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC Type of integrated circuit: analog switch Number of channels: 2 Case: SO16 Supply voltage: 3...18V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 600µA Kind of output: DP4T Kind of integrated circuit: demultiplexer; multiplexer Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM317LZ | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: bulk |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
| NTP185N60S5H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 800 шт: термін постачання 14-30 дні (днів) |
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| NSVDTA144WET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ Current gain: 80...140 Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NUP2114UPXV5T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT553 Number of channels: 2 Kind of package: reel; tape Version: ESD |
на замовлення 942 шт: термін постачання 14-30 дні (днів) |
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NUP4114UCW1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Semiconductor structure: unidirectional Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 12A Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NUP4114UPXV6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT563 Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NUP4114UPXV6T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT563 Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZNUP4114UCLW1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.5V Semiconductor structure: unidirectional Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS12FP | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NZT7053 | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 1.5A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 3831 шт: термін постачання 14-30 дні (днів) |
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NDS9948 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1299 шт: термін постачання 14-30 дні (днів) |
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NDC7003P | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Power dissipation: 0.96W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Kind of channel: enhancement Technology: PowerTrench® Drain current: -0.34A Gate charge: 2.2nC On-state resistance: 10Ω Gate-source voltage: ±20V |
на замовлення 2330 шт: термін постачання 14-30 дні (днів) |
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NTD20P06LT4G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1273 шт: термін постачання 14-30 дні (днів) |
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NTZD3155CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 400/500mΩ Mounting: SMD Gate charge: 1.5/1.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 278 шт: термін постачання 14-30 дні (днів) |
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NDT452AP | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Kind of channel: enhancement Drain current: -5A On-state resistance: 0.13Ω Gate-source voltage: ±20V |
на замовлення 2506 шт: термін постачання 14-30 дні (днів) |
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NDC7001C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Power dissipation: 0.96W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60/-60V Kind of channel: enhancement Drain current: 0.51/-0.34A Gate charge: 1.5/2.2nC On-state resistance: 4/10Ω Gate-source voltage: ±20V |
на замовлення 863 шт: термін постачання 14-30 дні (днів) |
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NTZD3155CT2G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Power dissipation: 0.25W Case: SOT563F Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20/-20V Kind of channel: enhancement Version: ESD Drain current: 0.39/-0.31A On-state resistance: 0.55/0.9Ω Gate-source voltage: ±6V |
на замовлення 3459 шт: термін постачання 14-30 дні (днів) |
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NVJD5121NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Kind of channel: enhancement Drain current: 0.212A On-state resistance: 1.6Ω Gate-source voltage: ±20V |
на замовлення 3026 шт: термін постачання 14-30 дні (днів) |
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NVMFS5113PLT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 75W Case: DFN5x6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Kind of channel: enhancement Drain current: -45A On-state resistance: 14mΩ Gate-source voltage: ±20V |
на замовлення 1369 шт: термін постачання 14-30 дні (днів) |
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NTR4171PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Kind of channel: enhancement Drain current: -1.5A Gate charge: 7.4nC On-state resistance: 0.15Ω Gate-source voltage: ±12V |
на замовлення 197 шт: термін постачання 14-30 дні (днів) |
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NJW3281G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 200W Case: TO3P Current gain: 45...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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NTD25P03LT4G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 75W Case: DPAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Kind of channel: enhancement Drain current: -25A Gate charge: 20nC On-state resistance: 90mΩ Gate-source voltage: ±15V |
на замовлення 375 шт: термін постачання 14-30 дні (днів) |
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NTR4502PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Kind of channel: enhancement Drain current: -1.56A Gate charge: 6nC On-state resistance: 0.35Ω Gate-source voltage: ±20V |
на замовлення 3038 шт: термін постачання 14-30 дні (днів) |
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DTC124XET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 80...150 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
на замовлення 2430 шт: термін постачання 14-30 дні (днів) |
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J176-D74Z | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA Mounting: THT Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Gate current: 50mA Power dissipation: 0.35W Gate-source voltage: 30V On-state resistance: 250Ω Kind of package: Ammo Pack Case: TO92 |
на замовлення 603 шт: термін постачання 14-30 дні (днів) |
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| UESD3.3DT5G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 3.3V Number of channels: 2 Kind of package: reel; tape |
на замовлення 1030 шт: термін постачання 14-30 дні (днів) |
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| ESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SK932-24-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 217 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 17+ | 24.30 грн |
| 25+ | 21.33 грн |
| 100+ | 18.86 грн |
| 2SK932-23-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
товару немає в наявності
В кошику
од. на суму грн.
| FSA2275UMX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FSA2259UMX |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; CMOS,TTL
Mounting: SMD
Case: UMLP10
Operating temperature: -40...85°C
Kind of output: SPDT x2
Supply voltage: 1.65...4.4V DC
Number of channels: 2
Type of integrated circuit: analog switch
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; CMOS,TTL
Mounting: SMD
Case: UMLP10
Operating temperature: -40...85°C
Kind of output: SPDT x2
Supply voltage: 1.65...4.4V DC
Number of channels: 2
Type of integrated circuit: analog switch
Technology: CMOS; TTL
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FSA2268L10X |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; TTL; OUT: SPDT x2
Mounting: SMD
Case: MicroPak10
Operating temperature: -40...85°C
Kind of output: SPDT x2
Supply voltage: 1.65...4.3V DC
Number of channels: 2
Type of integrated circuit: analog switch
Technology: TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; TTL; OUT: SPDT x2
Mounting: SMD
Case: MicroPak10
Operating temperature: -40...85°C
Kind of output: SPDT x2
Supply voltage: 1.65...4.3V DC
Number of channels: 2
Type of integrated circuit: analog switch
Technology: TTL
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FSA2268UMX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL
Mounting: SMD
Case: UMLP10
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: SPDT x2
Quiescent current: 500nA
Supply voltage: 1.65...4.3V DC
Number of channels: 2
Type of integrated circuit: analog switch
Technology: TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL
Mounting: SMD
Case: UMLP10
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: SPDT x2
Quiescent current: 500nA
Supply voltage: 1.65...4.3V DC
Number of channels: 2
Type of integrated circuit: analog switch
Technology: TTL
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FSA2275AUMX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FSA2276UMX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NV25320DTHFT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Case: TSSOP8
Mounting: SMD
Interface: SPI
Operating temperature: -40...150°C
Kind of interface: serial
Kind of package: reel; tape
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 32kb EEPROM
Memory organisation: 4kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Case: TSSOP8
Mounting: SMD
Interface: SPI
Operating temperature: -40...150°C
Kind of interface: serial
Kind of package: reel; tape
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 32kb EEPROM
Memory organisation: 4kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PRISM1M-AR0830CSSC130110-GEVB |
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 30116.66 грн |
| PRISM1M-AR1223NPSC130110-GEVB |
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на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 30116.66 грн |
| BSR14 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 3310 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.16 грн |
| 21+ | 20.26 грн |
| 24+ | 17.21 грн |
| 50+ | 13.67 грн |
| 100+ | 11.53 грн |
| 500+ | 7.99 грн |
| 1000+ | 6.92 грн |
| 3000+ | 5.77 грн |
| NTMS4177PR2G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.4A
Pulsed drain current: -46A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.4A
Pulsed drain current: -46A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SBE805-TL-W |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Capacitance: 16pF
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOT25
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Capacitance: 16pF
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOT25
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTC123JET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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В кошику
од. на суму грн.
| DTC123TET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
товару немає в наявності
В кошику
од. на суму грн.
| DTC123JM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| MURS140T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
на замовлення 1233 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.74 грн |
| 28+ | 14.82 грн |
| 31+ | 13.34 грн |
| 50+ | 9.64 грн |
| 100+ | 8.65 грн |
| 500+ | 7.41 грн |
| 1000+ | 6.92 грн |
| MURS105T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Kind of package: reel; tape
на замовлення 2418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.36 грн |
| 17+ | 25.04 грн |
| 20+ | 21.58 грн |
| 100+ | 13.92 грн |
| 250+ | 12.19 грн |
| 500+ | 10.95 грн |
| 1000+ | 10.21 грн |
| MURS110T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.875V
Kind of package: reel; tape
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.875V
Kind of package: reel; tape
Reverse recovery time: 35ns
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| FDMS007N08LC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BZX79C5V1-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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| NSVDTC123JET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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| 2N7002V |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| NCV8406ASTT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
на замовлення 542 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.05 грн |
| 10+ | 54.36 грн |
| MC74LVX4051DTG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Manufacturer series: LVX
Technology: CMOS
Number of inputs: 8
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Manufacturer series: LVX
Technology: CMOS
Number of inputs: 8
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
на замовлення 119 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.78 грн |
| 11+ | 39.86 грн |
| MC74LVX4051DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Manufacturer series: LVX
Technology: CMOS
Number of inputs: 8
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Manufacturer series: LVX
Technology: CMOS
Number of inputs: 8
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
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| MC74LVX4051DR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Manufacturer series: LVX
Technology: CMOS
Number of inputs: 8
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Manufacturer series: LVX
Technology: CMOS
Number of inputs: 8
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
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Мінімальне замовлення: 2500 шт
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| MC74LVX4051DTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Manufacturer series: LVX
Technology: CMOS
Number of inputs: 8
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Manufacturer series: LVX
Technology: CMOS
Number of inputs: 8
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| FSV15100V |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 250A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 250A
Kind of package: reel; tape
на замовлення 3096 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.89 грн |
| 15+ | 28.74 грн |
| 100+ | 28.66 грн |
| NTLJS3D0N02P8ZTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 20.2A; Idm: 81A; 2.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 20.2A
Pulsed drain current: 81A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 20.2A; Idm: 81A; 2.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 20.2A
Pulsed drain current: 81A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| MC14052BDTR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 4: 1; Ch: 2
Type of integrated circuit: analog switch
Output configuration: 4:1
Number of channels: 2
Case: TSSOP16
Supply voltage: 3...18V
Mounting: SMD
Resistance: 80Ω
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 4: 1; Ch: 2
Type of integrated circuit: analog switch
Output configuration: 4:1
Number of channels: 2
Case: TSSOP16
Supply voltage: 3...18V
Mounting: SMD
Resistance: 80Ω
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Technology: CMOS
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| MC14052BDR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
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| LM317LZ |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
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Мінімальне замовлення: 5 шт
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| NTP185N60S5H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 157.87 грн |
| NSVDTA144WET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Application: automotive industry
Quantity in set/package: 3000pcs.
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| NUP2114UPXV5T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT553
Number of channels: 2
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT553
Number of channels: 2
Kind of package: reel; tape
Version: ESD
на замовлення 942 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.40 грн |
| 26+ | 15.98 грн |
| 30+ | 14.00 грн |
| 50+ | 10.46 грн |
| 100+ | 9.47 грн |
| 250+ | 8.81 грн |
| NUP4114UCW1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 12A
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 12A
Version: ESD
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| NUP4114UPXV6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
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| NUP4114UPXV6T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
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| SZNUP4114UCLW1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SS12FP |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NZT7053 |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 3831 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.10 грн |
| 11+ | 38.87 грн |
| 13+ | 33.52 грн |
| 100+ | 20.26 грн |
| 250+ | 16.97 грн |
| 500+ | 15.07 грн |
| 1000+ | 13.51 грн |
| NDS9948 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1299 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.28 грн |
| 8+ | 53.20 грн |
| 10+ | 47.11 грн |
| 50+ | 35.25 грн |
| 100+ | 30.88 грн |
| 500+ | 22.57 грн |
| NDC7003P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Kind of channel: enhancement
Technology: PowerTrench®
Drain current: -0.34A
Gate charge: 2.2nC
On-state resistance: 10Ω
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Kind of channel: enhancement
Technology: PowerTrench®
Drain current: -0.34A
Gate charge: 2.2nC
On-state resistance: 10Ω
Gate-source voltage: ±20V
на замовлення 2330 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.48 грн |
| 21+ | 20.10 грн |
| 50+ | 14.82 грн |
| 100+ | 13.01 грн |
| 500+ | 9.72 грн |
| 1000+ | 8.57 грн |
| 1500+ | 7.99 грн |
| NTD20P06LT4G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1273 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 98.45 грн |
| 7+ | 62.10 грн |
| 10+ | 54.03 грн |
| 20+ | 47.60 грн |
| 50+ | 41.01 грн |
| 100+ | 37.14 грн |
| 200+ | 33.93 грн |
| 500+ | 30.55 грн |
| 1000+ | 30.39 грн |
| NTZD3155CT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 24.83 грн |
| 22+ | 19.27 грн |
| 50+ | 12.52 грн |
| 100+ | 10.38 грн |
| 250+ | 8.32 грн |
| NDT452AP |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Kind of channel: enhancement
Drain current: -5A
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Kind of channel: enhancement
Drain current: -5A
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
на замовлення 2506 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 100.22 грн |
| 6+ | 77.91 грн |
| 10+ | 68.52 грн |
| 50+ | 48.51 грн |
| 100+ | 41.76 грн |
| 250+ | 38.79 грн |
| NDC7001C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60/-60V
Kind of channel: enhancement
Drain current: 0.51/-0.34A
Gate charge: 1.5/2.2nC
On-state resistance: 4/10Ω
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60/-60V
Kind of channel: enhancement
Drain current: 0.51/-0.34A
Gate charge: 1.5/2.2nC
On-state resistance: 4/10Ω
Gate-source voltage: ±20V
на замовлення 863 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.33 грн |
| 13+ | 33.60 грн |
| 16+ | 27.34 грн |
| 50+ | 17.71 грн |
| 100+ | 15.40 грн |
| 250+ | 13.84 грн |
| NTZD3155CT2G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Power dissipation: 0.25W
Case: SOT563F
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Kind of channel: enhancement
Version: ESD
Drain current: 0.39/-0.31A
On-state resistance: 0.55/0.9Ω
Gate-source voltage: ±6V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Power dissipation: 0.25W
Case: SOT563F
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Kind of channel: enhancement
Version: ESD
Drain current: 0.39/-0.31A
On-state resistance: 0.55/0.9Ω
Gate-source voltage: ±6V
на замовлення 3459 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.49 грн |
| 25+ | 16.47 грн |
| 33+ | 12.68 грн |
| 100+ | 8.73 грн |
| 500+ | 6.75 грн |
| NVJD5121NT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Drain current: 0.212A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Drain current: 0.212A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
на замовлення 3026 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 16.85 грн |
| 33+ | 12.85 грн |
| 37+ | 11.37 грн |
| 100+ | 8.07 грн |
| 500+ | 6.75 грн |
| 1000+ | 6.18 грн |
| 3000+ | 5.85 грн |
| NVMFS5113PLT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 75W
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Kind of channel: enhancement
Drain current: -45A
On-state resistance: 14mΩ
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 75W
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Kind of channel: enhancement
Drain current: -45A
On-state resistance: 14mΩ
Gate-source voltage: ±20V
на замовлення 1369 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.15 грн |
| 10+ | 142.48 грн |
| 100+ | 101.30 грн |
| 500+ | 98.01 грн |
| NTR4171PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Kind of channel: enhancement
Drain current: -1.5A
Gate charge: 7.4nC
On-state resistance: 0.15Ω
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Kind of channel: enhancement
Drain current: -1.5A
Gate charge: 7.4nC
On-state resistance: 0.15Ω
Gate-source voltage: ±12V
на замовлення 197 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.04 грн |
| 17+ | 24.71 грн |
| 20+ | 21.50 грн |
| 25+ | 17.13 грн |
| 50+ | 14.17 грн |
| 100+ | 12.11 грн |
| NJW3281G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.60 грн |
| 10+ | 216.60 грн |
| NTD25P03LT4G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Kind of channel: enhancement
Drain current: -25A
Gate charge: 20nC
On-state resistance: 90mΩ
Gate-source voltage: ±15V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Kind of channel: enhancement
Drain current: -25A
Gate charge: 20nC
On-state resistance: 90mΩ
Gate-source voltage: ±15V
на замовлення 375 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.01 грн |
| 7+ | 68.36 грн |
| 10+ | 60.12 грн |
| 50+ | 49.41 грн |
| NTR4502PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Kind of channel: enhancement
Drain current: -1.56A
Gate charge: 6nC
On-state resistance: 0.35Ω
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Kind of channel: enhancement
Drain current: -1.56A
Gate charge: 6nC
On-state resistance: 0.35Ω
Gate-source voltage: ±20V
на замовлення 3038 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 23.95 грн |
| 27+ | 15.81 грн |
| 32+ | 13.01 грн |
| 50+ | 8.73 грн |
| 100+ | 7.91 грн |
| 250+ | 7.25 грн |
| 500+ | 6.92 грн |
| 1000+ | 6.42 грн |
| 3000+ | 5.93 грн |
| DTC124XET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
на замовлення 2430 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.64 грн |
| 52+ | 8.07 грн |
| 60+ | 6.92 грн |
| 106+ | 3.90 грн |
| 500+ | 2.75 грн |
| 1000+ | 2.41 грн |
| J176-D74Z |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
Gate-source voltage: 30V
On-state resistance: 250Ω
Kind of package: Ammo Pack
Case: TO92
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
Gate-source voltage: 30V
On-state resistance: 250Ω
Kind of package: Ammo Pack
Case: TO92
на замовлення 603 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 40.80 грн |
| 16+ | 27.10 грн |
| 25+ | 21.82 грн |
| 50+ | 18.45 грн |
| 100+ | 15.57 грн |
| 250+ | 12.68 грн |
| 500+ | 11.12 грн |
| UESD3.3DT5G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
на замовлення 1030 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.38 грн |
| 25+ | 17.13 грн |
| 30+ | 14.08 грн |
| 38+ | 11.04 грн |
| 50+ | 9.39 грн |
| 100+ | 8.24 грн |
| 500+ | 6.84 грн |
| ESD9X3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
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