Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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KSC5027OTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 800V Collector current: 3A Power dissipation: 50W Case: TO220AB Current gain: 20...40 Mounting: THT Kind of package: tube Frequency: 15MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSC1845FTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed Case: TO92 Formed Frequency: 100MHz Collector-emitter voltage: 120V Current gain: 300...600 Collector current: 50mA Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: Ammo Pack Mounting: THT |
на замовлення 968 шт: термін постачання 21-30 дні (днів) |
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KSA992FATA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.5W Case: TO92 Formed Current gain: 300...470 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSA992FBU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.5W Case: TO92 Current gain: 300...600 Mounting: THT Kind of package: bulk Frequency: 100MHz |
на замовлення 8440 шт: термін постачання 21-30 дні (днів) |
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KSA992FTA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.5W Case: TO92 Formed Current gain: 300...600 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSB772YS | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO Mounting: THT Case: TO126ISO Frequency: 80MHz Collector-emitter voltage: 30V Current gain: 160...320 Collector current: 3A Pulsed collector current: 7A Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar Kind of package: bulk |
на замовлення 1902 шт: термін постачання 21-30 дні (днів) |
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KSC3503DS | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 300V; 0.1A; 7W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 7W Case: TO126ISO Pulsed collector current: 0.2A Current gain: 60...120 Mounting: THT Kind of package: bulk Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSE13003H2ASTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO Frequency: 4MHz Collector-emitter voltage: 400V Current gain: 14...21 Collector current: 1.5A Pulsed collector current: 3A Type of transistor: NPN Power dissipation: 20W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO126ISO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSC1815YTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Power dissipation: 0.4W Polarisation: bipolar Frequency: 80MHz Collector-emitter voltage: 50V Current gain: 120...240 Collector current: 0.15A Type of transistor: NPN |
на замовлення 2125 шт: термін постачання 21-30 дні (днів) |
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SBC857BWT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 863 шт: термін постачання 21-30 дні (днів) |
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KSD2012GTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP Frequency: 3MHz Collector-emitter voltage: 60V Current gain: 150...320 Collector current: 3A Type of transistor: NPN Power dissipation: 25W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CNY173M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 380 шт: термін постачання 21-30 дні (днів) |
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CNY173SM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 953 шт: термін постачання 21-30 дні (днів) |
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CNY173SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CNY173SR2VM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 1790 шт: термін постачання 21-30 дні (днів) |
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CNY173TVM | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSD1691GS | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Collector-emitter voltage: 60V Current gain: 200...400 Collector current: 5A Pulsed collector current: 8A Type of transistor: NPN Power dissipation: 20W Polarisation: bipolar Kind of package: bulk Mounting: THT Case: TO126ISO |
на замовлення 1995 шт: термін постачання 21-30 дні (днів) |
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KSD1691GSTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Collector-emitter voltage: 60V Current gain: 200...400 Collector current: 5A Pulsed collector current: 8A Type of transistor: NPN Power dissipation: 20W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO126ISO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSD1691YS | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Collector-emitter voltage: 60V Current gain: 160...320 Collector current: 5A Pulsed collector current: 8A Type of transistor: NPN Power dissipation: 20W Polarisation: bipolar Kind of package: bulk Mounting: THT Case: TO126ISO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSD1691YSTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Collector-emitter voltage: 60V Current gain: 160...320 Collector current: 5A Pulsed collector current: 8A Type of transistor: NPN Power dissipation: 20W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO126ISO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSD1616AGBU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Frequency: 160MHz Collector-emitter voltage: 60V Current gain: 200...400 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Power dissipation: 0.75W Polarisation: bipolar Kind of package: bulk Mounting: THT Case: TO92 |
на замовлення 9980 шт: термін постачання 21-30 дні (днів) |
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KSD1616AGTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed Frequency: 160MHz Collector-emitter voltage: 60V Current gain: 200...400 Collector current: 1A Type of transistor: NPN Power dissipation: 0.75W Polarisation: bipolar Kind of package: Ammo Pack Mounting: THT Case: TO92 Formed |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSD1616AYTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Frequency: 160MHz Collector-emitter voltage: 60V Current gain: 135...270 Collector current: 1A Type of transistor: NPN Power dissipation: 0.75W Polarisation: bipolar Kind of package: Ammo Pack Mounting: THT Case: TO92 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSD880YTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 30W Polarisation: bipolar Frequency: 3MHz Collector-emitter voltage: 60V Current gain: 100...200 Collector current: 3A Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSA928AYTA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 1W Mounting: THT Kind of package: Ammo Pack Frequency: 120MHz Collector current: 2A Collector-emitter voltage: 30V Current gain: 160...320 Case: TO92 Formed |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSC2383OTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSC1008CYTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed Mounting: THT Case: TO92 Formed Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.8W Polarisation: bipolar Kind of package: Ammo Pack Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 |
на замовлення 1691 шт: термін постачання 21-30 дні (днів) |
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KSC1008YBU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Mounting: THT Case: TO92 Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.8W Polarisation: bipolar Kind of package: bulk Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSC1008YTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed Mounting: THT Case: TO92 Formed Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.8W Polarisation: bipolar Kind of package: Ammo Pack Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2N7002 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 78344 шт: термін постачання 21-30 дні (днів) |
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NTHL075N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 120A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74VHC1G09DTT1G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP5 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: open drain Quiescent current: 40µA Kind of gate: AND Number of inputs: 2 Family: VHC |
на замовлення 1959 шт: термін постачання 21-30 дні (днів) |
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NLSV1T34DFT2G | ONSEMI |
![]() Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Supply voltage: 0.9...4.5V DC Quiescent current: 2µA Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: SOT353 |
на замовлення 1063 шт: термін постачання 21-30 дні (днів) |
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1N4448 | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 4A Power dissipation: 0.5W |
на замовлення 3131 шт: термін постачання 21-30 дні (днів) |
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1N5401G | ONSEMI |
![]() Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 469 шт: термін постачання 21-30 дні (днів) |
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4N25M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 0.85kV; CTR@If: 20%@10mA Mounting: THT Insulation voltage: 0.85kV CTR@If: 20%@10mA Type of optocoupler: optocoupler Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs Number of channels: 1 Kind of output: transistor |
на замовлення 218 шт: термін постачання 21-30 дні (днів) |
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1N4004G | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 523 шт: термін постачання 21-30 дні (днів) |
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6N136VM | ONSEMI |
![]() Description: Optocoupler Type of optocoupler: optocoupler |
на замовлення 284 шт: термін постачання 21-30 дні (днів) |
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1N4006G | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 1675 шт: термін постачання 21-30 дні (днів) |
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MC74ACT139DG | ONSEMI |
![]() Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Technology: TTL Mounting: SMD Case: SOIC16 Supply voltage: 4.5...5.5V DC Family: ACT Kind of package: tube Operating temperature: -40...85°C Manufacturer series: ACT |
на замовлення 229 шт: термін постачання 21-30 дні (днів) |
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6N137SM | ONSEMI |
![]() ![]() Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 30ns Manufacturer series: 6N137M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQD8P10TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2099 шт: термін постачання 21-30 дні (днів) |
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DTA115EET1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416 Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80...150 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 100kΩ Base-emitter resistor: 100kΩ |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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6N136SM | ONSEMI |
![]() Description: Optocoupler Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSA1298YMTF | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB Case: SOT23; TO236AB Frequency: 120MHz Collector-emitter voltage: 25V Current gain: 100...320 Collector current: 0.8A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
на замовлення 2055 шт: термін постачання 21-30 дні (днів) |
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FXMA2104UMX | ONSEMI |
![]() Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 4 Number of inputs: 4 Number of outputs: 4 Supply voltage: 1.65...5.5V DC Frequency: 26MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: MLP12 |
на замовлення 3657 шт: термін постачання 21-30 дні (днів) |
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1N4005G | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Mounting: THT Case: CASE59 Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: bulk Type of diode: rectifying Quantity in set/package: 1000pcs. |
на замовлення 2417 шт: термін постачання 21-30 дні (днів) |
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FSUSB242GEVB | ONSEMI |
Category: Unclassified Description: FSUSB242GEVB |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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UF4007 | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Leakage current: 75µA Power dissipation: 2.08W Capacitance: 17pF |
на замовлення 2377 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SMD-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Power dissipation: 174W Case: TO247-3 Mounting: THT Gate charge: 119nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FGAF40N60SMD | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF Type of transistor: IGBT Power dissipation: 58W Case: TO3PF Mounting: THT Gate charge: 119nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FGAF40N60UFTU | ONSEMI |
![]() ![]() Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 77nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 160A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FGB20N60SFD-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD Type of transistor: IGBT Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 63nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Application: ignition systems Version: ESD Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FGA40N65SMD | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 174W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 174W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 119nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FGH60T65SHD-F155 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 102nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FGH60T65SQD-F155 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 79nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FGA40T65SHD | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 134W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 72.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FGB40T65SPD-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 134W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 36nC |
на замовлення 785 шт: термін постачання 21-30 дні (днів) |
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FGH40T65SHD-F155 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 72.2nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FGH40T65SHDF-F155 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 68nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
KSC5027OTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 50W
Case: TO220AB
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 50W
Case: TO220AB
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
товару немає в наявності
В кошику
од. на суму грн.
KSC1845FTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Case: TO92 Formed
Frequency: 100MHz
Collector-emitter voltage: 120V
Current gain: 300...600
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Case: TO92 Formed
Frequency: 100MHz
Collector-emitter voltage: 120V
Current gain: 300...600
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
на замовлення 968 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.18 грн |
33+ | 11.59 грн |
45+ | 8.63 грн |
51+ | 7.53 грн |
100+ | 6.47 грн |
229+ | 3.90 грн |
629+ | 3.69 грн |
KSA992FATA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 300...470
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 300...470
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
KSA992FBU |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.5W
Case: TO92
Current gain: 300...600
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.5W
Case: TO92
Current gain: 300...600
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
на замовлення 8440 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.35 грн |
33+ | 11.67 грн |
50+ | 7.92 грн |
100+ | 6.80 грн |
215+ | 4.16 грн |
591+ | 3.93 грн |
KSA992FTA |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 300...600
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 300...600
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
KSB772YS |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Mounting: THT
Case: TO126ISO
Frequency: 80MHz
Collector-emitter voltage: 30V
Current gain: 160...320
Collector current: 3A
Pulsed collector current: 7A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Mounting: THT
Case: TO126ISO
Frequency: 80MHz
Collector-emitter voltage: 30V
Current gain: 160...320
Collector current: 3A
Pulsed collector current: 7A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: bulk
на замовлення 1902 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.10 грн |
11+ | 36.07 грн |
50+ | 18.15 грн |
136+ | 17.16 грн |
KSC3503DS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 7W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 7W
Case: TO126ISO
Pulsed collector current: 0.2A
Current gain: 60...120
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 7W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 7W
Case: TO126ISO
Pulsed collector current: 0.2A
Current gain: 60...120
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
товару немає в наявності
В кошику
од. на суму грн.
KSE13003H2ASTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 14...21
Collector current: 1.5A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 14...21
Collector current: 1.5A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
товару немає в наявності
В кошику
од. на суму грн.
KSC1815YTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Power dissipation: 0.4W
Polarisation: bipolar
Frequency: 80MHz
Collector-emitter voltage: 50V
Current gain: 120...240
Collector current: 0.15A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Power dissipation: 0.4W
Polarisation: bipolar
Frequency: 80MHz
Collector-emitter voltage: 50V
Current gain: 120...240
Collector current: 0.15A
Type of transistor: NPN
на замовлення 2125 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.53 грн |
33+ | 11.74 грн |
100+ | 7.60 грн |
251+ | 3.56 грн |
689+ | 3.37 грн |
2000+ | 3.28 грн |
SBC857BWT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 863 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.68 грн |
54+ | 7.17 грн |
67+ | 5.72 грн |
155+ | 2.47 грн |
500+ | 1.66 грн |
591+ | 1.51 грн |
KSD2012GTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Frequency: 3MHz
Collector-emitter voltage: 60V
Current gain: 150...320
Collector current: 3A
Type of transistor: NPN
Power dissipation: 25W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220FP
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Frequency: 3MHz
Collector-emitter voltage: 60V
Current gain: 150...320
Collector current: 3A
Type of transistor: NPN
Power dissipation: 25W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220FP
товару немає в наявності
В кошику
од. на суму грн.
CNY173M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 380 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.49 грн |
14+ | 29.06 грн |
50+ | 20.44 грн |
51+ | 17.77 грн |
100+ | 16.09 грн |
CNY173SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 953 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.10 грн |
13+ | 30.43 грн |
46+ | 19.62 грн |
127+ | 18.54 грн |
CNY173SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
товару немає в наявності
В кошику
од. на суму грн.
CNY173SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 1790 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.53 грн |
14+ | 29.13 грн |
38+ | 23.95 грн |
50+ | 23.87 грн |
100+ | 21.74 грн |
CNY173TVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
товару немає в наявності
В кошику
од. на суму грн.
KSD1691GS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 5A
Pulsed collector current: 8A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO126ISO
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 5A
Pulsed collector current: 8A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO126ISO
на замовлення 1995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.13 грн |
8+ | 49.88 грн |
25+ | 44.08 грн |
26+ | 35.39 грн |
70+ | 33.48 грн |
KSD1691GSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 5A
Pulsed collector current: 8A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 5A
Pulsed collector current: 8A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
товару немає в наявності
В кошику
од. на суму грн.
KSD1691YS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Collector-emitter voltage: 60V
Current gain: 160...320
Collector current: 5A
Pulsed collector current: 8A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO126ISO
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Collector-emitter voltage: 60V
Current gain: 160...320
Collector current: 5A
Pulsed collector current: 8A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO126ISO
товару немає в наявності
В кошику
од. на суму грн.
KSD1691YSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Collector-emitter voltage: 60V
Current gain: 160...320
Collector current: 5A
Pulsed collector current: 8A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Collector-emitter voltage: 60V
Current gain: 160...320
Collector current: 5A
Pulsed collector current: 8A
Type of transistor: NPN
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
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KSD1616AGBU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
на замовлення 9980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.03 грн |
21+ | 18.23 грн |
100+ | 10.52 грн |
117+ | 7.63 грн |
321+ | 7.25 грн |
5000+ | 7.02 грн |
KSD1616AGTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92 Formed
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92 Formed
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KSD1616AYTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 135...270
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 135...270
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92
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KSD880YTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 30W
Polarisation: bipolar
Frequency: 3MHz
Collector-emitter voltage: 60V
Current gain: 100...200
Collector current: 3A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 30W
Polarisation: bipolar
Frequency: 3MHz
Collector-emitter voltage: 60V
Current gain: 100...200
Collector current: 3A
Type of transistor: NPN
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KSA928AYTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Mounting: THT
Kind of package: Ammo Pack
Frequency: 120MHz
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Case: TO92 Formed
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Mounting: THT
Kind of package: Ammo Pack
Frequency: 120MHz
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Case: TO92 Formed
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KSC2383OTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
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KSC1008CYTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
на замовлення 1691 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.46 грн |
28+ | 13.73 грн |
36+ | 10.60 грн |
100+ | 7.32 грн |
182+ | 4.96 грн |
499+ | 4.65 грн |
KSC1008YBU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: bulk
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: bulk
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
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KSC1008YTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
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2N7002 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 78344 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.82 грн |
30+ | 12.96 грн |
50+ | 9.99 грн |
100+ | 9.08 грн |
162+ | 5.49 грн |
444+ | 5.26 грн |
NTHL075N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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MC74VHC1G09DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Quiescent current: 40µA
Kind of gate: AND
Number of inputs: 2
Family: VHC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Quiescent current: 40µA
Kind of gate: AND
Number of inputs: 2
Family: VHC
на замовлення 1959 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.03 грн |
53+ | 7.25 грн |
100+ | 6.86 грн |
164+ | 5.49 грн |
450+ | 5.19 грн |
NLSV1T34DFT2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Supply voltage: 0.9...4.5V DC
Quiescent current: 2µA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT353
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Supply voltage: 0.9...4.5V DC
Quiescent current: 2µA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT353
на замовлення 1063 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.88 грн |
8+ | 48.05 грн |
25+ | 41.79 грн |
28+ | 32.49 грн |
76+ | 30.73 грн |
500+ | 30.58 грн |
1N4448 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
на замовлення 3131 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.02 грн |
129+ | 2.97 грн |
176+ | 2.17 грн |
250+ | 1.87 грн |
500+ | 1.65 грн |
1000+ | 1.42 грн |
1060+ | 0.84 грн |
2915+ | 0.79 грн |
1N5401G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 469 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.64 грн |
24+ | 16.40 грн |
80+ | 11.21 грн |
219+ | 10.60 грн |
250+ | 10.22 грн |
4N25M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 0.85kV; CTR@If: 20%@10mA
Mounting: THT
Insulation voltage: 0.85kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 0.85kV; CTR@If: 20%@10mA
Mounting: THT
Insulation voltage: 0.85kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
на замовлення 218 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.92 грн |
13+ | 30.66 грн |
50+ | 23.34 грн |
55+ | 16.47 грн |
150+ | 15.56 грн |
1N4004G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 523 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.32 грн |
59+ | 6.48 грн |
100+ | 4.68 грн |
328+ | 2.73 грн |
6N136VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 284 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
38+ | 164.26 грн |
200+ | 133.46 грн |
1N4006G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 1675 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.50 грн |
53+ | 7.32 грн |
100+ | 4.87 грн |
276+ | 3.23 грн |
759+ | 3.05 грн |
MC74ACT139DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: tube
Operating temperature: -40...85°C
Manufacturer series: ACT
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: tube
Operating temperature: -40...85°C
Manufacturer series: ACT
на замовлення 229 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 95.27 грн |
10+ | 44.31 грн |
24+ | 37.60 грн |
48+ | 36.00 грн |
66+ | 35.54 грн |
96+ | 34.17 грн |
6N137SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
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FQD8P10TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2099 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.67 грн |
10+ | 41.34 грн |
35+ | 26.23 грн |
94+ | 24.79 грн |
1000+ | 23.87 грн |
DTA115EET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80...150
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80...150
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.32 грн |
55+ | 7.02 грн |
100+ | 4.34 грн |
387+ | 2.31 грн |
1063+ | 2.18 грн |
6000+ | 2.10 грн |
6N136SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
товару немає в наявності
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KSA1298YMTF |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Case: SOT23; TO236AB
Frequency: 120MHz
Collector-emitter voltage: 25V
Current gain: 100...320
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Case: SOT23; TO236AB
Frequency: 120MHz
Collector-emitter voltage: 25V
Current gain: 100...320
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 2055 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.78 грн |
46+ | 8.47 грн |
100+ | 5.57 грн |
390+ | 2.29 грн |
1072+ | 2.16 грн |
FXMA2104UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Supply voltage: 1.65...5.5V DC
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP12
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Supply voltage: 1.65...5.5V DC
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP12
на замовлення 3657 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.64 грн |
10+ | 42.40 грн |
22+ | 41.79 грн |
50+ | 40.80 грн |
59+ | 39.50 грн |
250+ | 39.20 грн |
500+ | 37.98 грн |
1N4005G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Mounting: THT
Case: CASE59
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Mounting: THT
Case: CASE59
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Quantity in set/package: 1000pcs.
на замовлення 2417 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.78 грн |
39+ | 9.84 грн |
49+ | 7.84 грн |
100+ | 5.41 грн |
350+ | 2.55 грн |
961+ | 2.41 грн |
FSUSB242GEVB |
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 8948.96 грн |
UF4007 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Power dissipation: 2.08W
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Power dissipation: 2.08W
Capacitance: 17pF
на замовлення 2377 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.92 грн |
25+ | 15.79 грн |
100+ | 9.30 грн |
128+ | 7.02 грн |
353+ | 6.63 грн |
500+ | 6.56 грн |
FGH40N60SMD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
FGAF40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
FGAF40N60UFTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 160A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
FGB20N60SFD-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
FGA40N65SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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од. на суму грн.
FGH60T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
товару немає в наявності
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FGH60T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
товару немає в наявності
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од. на суму грн.
FGA40T65SHD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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од. на суму грн.
FGB40T65SPD-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 36nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 36nC
на замовлення 785 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 274.32 грн |
5+ | 222.69 грн |
12+ | 211.25 грн |
100+ | 206.68 грн |
250+ | 202.86 грн |
FGH40T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
товару немає в наявності
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од. на суму грн.
FGH40T65SHDF-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.