Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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H11AA1M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: DIP6 CTR@If: 20%@10mA |
на замовлення 354 шт: термін постачання 21-30 дні (днів) |
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H11AA1SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: Gull wing 6 CTR@If: 20%@10mA |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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FAN73832MX | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8 Case: SOP8 Technology: MillerDrive™ Kind of package: reel; tape Topology: MOSFET half-bridge Voltage class: 600V Operating temperature: -40...125°C Mounting: SMD Supply voltage: 15...20V DC Output current: -650...350mA Type of integrated circuit: driver Impulse rise time: 100ns Pulse fall time: 80ns Number of channels: 2 Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side |
на замовлення 941 шт: термін постачання 21-30 дні (днів) |
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FQPF19N20C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.1A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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FQPF27P06 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 47W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2575T-5G | ONSEMI |
![]() ![]() Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 1A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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SBAT54SLT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 1A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W |
на замовлення 2821 шт: термін постачання 21-30 дні (днів) |
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MCT62S | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; CTR@If: 100%@5mA Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100%@5mA Type of optocoupler: optocoupler Mounting: SMD Case: Gull wing 8 |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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MBR60H100CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220-3 Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 60A Max. forward voltage: 0.81V Max. forward impulse current: 350A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR60L45CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220-3 Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 60A Max. forward voltage: 0.76V Max. forward impulse current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BDV64BG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 10A Type of transistor: PNP Power dissipation: 125W Polarisation: bipolar |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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BZX84C9V1LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 0.5µA |
на замовлення 1046 шт: термін постачання 21-30 дні (днів) |
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CAT24C04C4ATR | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAT24C04WI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAT24C04YI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQP11N40C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BAT54CXV3T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SC89 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.24W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SBAT54CTT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SC70 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
CAT93C46BHU4I-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V Case: uDFN8 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: EEPROM memory Interface: Microwire Kind of memory: EEPROM Memory organisation: 128x8/64x16bit Access time: 250ns Clock frequency: 4MHz Kind of interface: serial Memory: 1kb EEPROM Operating temperature: -40...85°C Operating voltage: 1.8...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAT93C46BVI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kb EEPROM Interface: Microwire Memory organisation: 128x8/64x16bit Operating voltage: 1.8...5.5V Mounting: SMD Case: SOIC8 Kind of interface: serial Access time: 250ns Clock frequency: 4MHz Kind of package: reel; tape Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAT93C46BYI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kb EEPROM Interface: Microwire Memory organisation: 128x8/64x16bit Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 Kind of interface: serial Access time: 250ns Clock frequency: 4MHz Kind of package: reel; tape Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SA2012-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89 Mounting: SMD Frequency: 350MHz Collector-emitter voltage: 30V Current gain: 200...560 Collector current: 5A Type of transistor: PNP Power dissipation: 3.5W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 |
на замовлення 239 шт: термін постачання 21-30 дні (днів) |
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NLVASB3157DFT2G | ONSEMI |
![]() Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: SC88A Supply voltage: 1.65...5.5V DC Mounting: SMD Operating temperature: -55...125°C Kind of output: SPDT Application: automotive industry Number of channels: 1 |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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BAT54HT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. load current: 0.3A Kind of package: reel; tape Capacitance: 7.6pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 5286 шт: термін постачання 21-30 дні (днів) |
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MBRD660CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 60V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Kind of package: reel; tape Max. load current: 6A |
на замовлення 848 шт: термін постачання 21-30 дні (днів) |
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HUF75344G3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO247 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhancement |
на замовлення 201 шт: термін постачання 21-30 дні (днів) |
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FQA70N10 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 49.5A Power dissipation: 214W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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FQB12P20TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.27A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 470mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 430 шт: термін постачання 21-30 дні (днів) |
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FQB19N20LTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 13.3A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 84A |
на замовлення 760 шт: термін постачання 21-30 дні (днів) |
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FQB22P10TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -15.6A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3859 шт: термін постачання 21-30 дні (днів) |
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FQB27P06TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -19.1A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQB34P10TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 458 шт: термін постачання 21-30 дні (днів) |
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FXL4TD245BQX | ONSEMI |
![]() Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Number of channels: 4 Number of inputs: 4 Number of outputs: 4 Supply voltage: 1.1...3.6V DC Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: DQFN16 |
на замовлення 2036 шт: термін постачання 21-30 дні (днів) |
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HCPL2531M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV Transfer rate: 1Mbps Case: DIP8 Max. off-state voltage: 5V Output voltage: -500mV...20V Manufacturer series: HCPL2531M CTR@If: 19-50%@16mA |
на замовлення 1087 шт: термін постачання 21-30 дні (днів) |
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HCPL2531SDM | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 1Mbps; DIP8; 10kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: logic Insulation voltage: 5kV Transfer rate: 1Mbps Case: DIP8 Slew rate: 10kV/μs Max. off-state voltage: 5V Output voltage: -500mV...20V Manufacturer series: HCPL2531M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC7805CTG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220AB; THT; MC7800 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: TO220AB Mounting: THT Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm Input voltage: 7...20V Manufacturer series: MC7800 |
на замовлення 1501 шт: термін постачання 21-30 дні (днів) |
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RFD14N05LSM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Mounting: SMD Case: DPAK Drain-source voltage: 50V Drain current: 14A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: logic level Gate charge: 40nC Kind of channel: enhancement Gate-source voltage: ±10V |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
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RFD14N05LSM9A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2100 шт: термін постачання 21-30 дні (днів) |
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BC808-25LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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MJE172G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 3A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power dissipation: 12.5W Case: TO225 Current gain: 50...250 Mounting: THT Kind of package: bulk Frequency: 50MHz |
на замовлення 363 шт: термін постачання 21-30 дні (днів) |
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MC74VHC245DTR2G | ONSEMI |
![]() Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: bus buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHC Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJF44H11G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220FP Current gain: 60 Mounting: THT Kind of package: tube Frequency: 50MHz |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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MC74HC4040ADR2G | ONSEMI |
![]() Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC Type of integrated circuit: digital Kind of integrated circuit: 12-stage; binary ripple counter Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Number of channels: 1 Number of inputs: 2 Operating temperature: -55...125°C Kind of package: reel; tape Manufacturer series: HC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MC74HC4040ADTR2G | ONSEMI |
![]() Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC Type of integrated circuit: digital Kind of integrated circuit: 12-stage; binary ripple counter Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V DC Number of channels: 1 Number of inputs: 2 Operating temperature: -55...125°C Kind of package: reel; tape Manufacturer series: HC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FSA2275AUMX | ONSEMI |
![]() Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Type of integrated circuit: analog switch Number of channels: 2 Kind of output: SPDT x2 Kind of package: reel; tape Mounting: SMD Case: UMLP12 Supply voltage: 2.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FSA2275UMX | ONSEMI |
![]() Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Type of integrated circuit: analog switch Number of channels: 2 Kind of output: SPDT x2 Kind of package: reel; tape Mounting: SMD Case: UMLP12 Supply voltage: 2.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FSA2276UMX | ONSEMI |
![]() Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape Operating temperature: -40...85°C Type of integrated circuit: analog switch Number of channels: 2 Kind of output: SPDT x2 Kind of package: reel; tape Mounting: SMD Case: UMLP12 Supply voltage: 1.65...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14503BDG | ONSEMI |
![]() Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube Operating temperature: -55...125°C Case: SOIC16 Number of inputs: 1 Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 6 Kind of output: 3-state Kind of package: tube Technology: CMOS Kind of integrated circuit: 3-state; buffer; hex Mounting: SMD |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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BZX79C15 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX79C |
на замовлення 2972 шт: термін постачання 21-30 дні (днів) |
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BZX79C3V3 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.3V; bulk; CASE017AG; single diode; 25uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 25µA Manufacturer series: BZX79C |
на замовлення 2888 шт: термін постачання 21-30 дні (днів) |
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MC7805BD2TG | ONSEMI |
![]() ![]() Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; MC7800 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: D2PAK Mounting: SMD Manufacturer series: MC7800 Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 8...20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC7805BD2TR4G | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; MC7800 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: D2PAK Mounting: SMD Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 8...20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FCH067N65S3-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Pulsed drain current: 110A Power dissipation: 312W Case: TO247 Gate-source voltage: ±30V On-state resistance: 59mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14022BDG | ONSEMI |
![]() ![]() Description: IC: digital; counter; Ch: 8; CMOS; SMD; SO16 Type of integrated circuit: digital Number of channels: 8 Technology: CMOS Kind of integrated circuit: counter Mounting: SMD Case: SO16 |
на замовлення 2022 шт: термін постачання 21-30 дні (днів) |
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BC858ALT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1339 шт: термін постачання 21-30 дні (днів) |
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BAV70M3T5G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT723; Ufmax: 1.25V; 640mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT723 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 0.1mA Power dissipation: 0.64W |
на замовлення 7960 шт: термін постачання 21-30 дні (днів) |
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BC807-40WT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 6026 шт: термін постачання 21-30 дні (днів) |
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SBC807-40LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 2870 шт: термін постачання 21-30 дні (днів) |
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SBC807-40LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBC807-40WT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 1439 шт: термін постачання 21-30 дні (днів) |
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H11AA1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
на замовлення 354 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.44 грн |
12+ | 33.10 грн |
42+ | 22.01 грн |
114+ | 20.85 грн |
250+ | 20.77 грн |
H11AA1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
CTR@If: 20%@10mA
на замовлення 98 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 52.59 грн |
12+ | 32.63 грн |
30+ | 30.46 грн |
50+ | 27.75 грн |
82+ | 27.67 грн |
FAN73832MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Case: SOP8
Technology: MillerDrive™
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 600V
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 15...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 2
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Case: SOP8
Technology: MillerDrive™
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 600V
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 15...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 2
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
на замовлення 941 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 85.98 грн |
6+ | 70.54 грн |
16+ | 57.36 грн |
44+ | 54.26 грн |
500+ | 52.71 грн |
FQPF19N20C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 148.59 грн |
10+ | 75.19 грн |
15+ | 63.56 грн |
FQPF27P06 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
LM2575T-5G | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 29 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 177.81 грн |
8+ | 117.05 грн |
22+ | 110.85 грн |
SBAT54SLT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
на замовлення 2821 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.36 грн |
35+ | 11.39 грн |
42+ | 9.24 грн |
50+ | 7.81 грн |
100+ | 6.60 грн |
252+ | 3.62 грн |
691+ | 3.43 грн |
MCT62S |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; CTR@If: 100%@5mA
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; CTR@If: 100%@5mA
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 8
на замовлення 104 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 68.45 грн |
10+ | 42.09 грн |
29+ | 31.32 грн |
80+ | 29.61 грн |
MBR60H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.81V
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.81V
Max. forward impulse current: 350A
товару немає в наявності
В кошику
од. на суму грн.
MBR60L45CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.76V
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.76V
Max. forward impulse current: 200A
товару немає в наявності
В кошику
од. на суму грн.
BDV64BG |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Type of transistor: PNP
Power dissipation: 125W
Polarisation: bipolar
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Type of transistor: PNP
Power dissipation: 125W
Polarisation: bipolar
на замовлення 95 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 283.82 грн |
7+ | 138.75 грн |
19+ | 131.00 грн |
BZX84C9V1LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.5µA
на замовлення 1046 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.35 грн |
65+ | 6.05 грн |
76+ | 5.12 грн |
118+ | 3.29 грн |
143+ | 2.72 грн |
500+ | 1.83 грн |
746+ | 1.21 грн |
CAT24C04C4ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
CAT24C04WI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
CAT24C04YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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FQP11N40C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
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BAT54CXV3T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC89
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.24W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC89
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.24W
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SBAT54CTT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
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CAT93C46BHU4I-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Interface: Microwire
Kind of memory: EEPROM
Memory organisation: 128x8/64x16bit
Access time: 250ns
Clock frequency: 4MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Interface: Microwire
Kind of memory: EEPROM
Memory organisation: 128x8/64x16bit
Access time: 250ns
Clock frequency: 4MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
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CAT93C46BVI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 250ns
Clock frequency: 4MHz
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 250ns
Clock frequency: 4MHz
Kind of package: reel; tape
Operating temperature: -40...85°C
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CAT93C46BYI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 250ns
Clock frequency: 4MHz
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 250ns
Clock frequency: 4MHz
Kind of package: reel; tape
Operating temperature: -40...85°C
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2SA2012-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Frequency: 350MHz
Collector-emitter voltage: 30V
Current gain: 200...560
Collector current: 5A
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Frequency: 350MHz
Collector-emitter voltage: 30V
Current gain: 200...560
Collector current: 5A
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
на замовлення 239 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.08 грн |
25+ | 28.22 грн |
37+ | 24.73 грн |
102+ | 23.41 грн |
NLVASB3157DFT2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Application: automotive industry
Number of channels: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Application: automotive industry
Number of channels: 1
на замовлення 900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.95 грн |
25+ | 18.06 грн |
60+ | 15.19 грн |
100+ | 15.12 грн |
165+ | 14.34 грн |
500+ | 13.80 грн |
BAT54HT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 5286 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
78+ | 5.42 грн |
114+ | 3.41 грн |
177+ | 2.19 грн |
250+ | 1.81 грн |
500+ | 1.25 грн |
847+ | 1.07 грн |
2326+ | 1.02 грн |
MBRD660CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Kind of package: reel; tape
Max. load current: 6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Kind of package: reel; tape
Max. load current: 6A
на замовлення 848 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.10 грн |
10+ | 40.54 грн |
32+ | 29.07 грн |
86+ | 27.52 грн |
500+ | 27.36 грн |
HUF75344G3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 201 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 293.00 грн |
5+ | 189.91 грн |
14+ | 179.06 грн |
FQA70N10 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 197.84 грн |
FQB12P20TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 430 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 132.73 грн |
5+ | 110.07 грн |
11+ | 84.49 грн |
30+ | 80.61 грн |
100+ | 79.84 грн |
FQB19N20LTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
на замовлення 760 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 113.53 грн |
5+ | 95.34 грн |
13+ | 72.86 грн |
35+ | 68.99 грн |
FQB22P10TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3859 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 178.64 грн |
10+ | 106.19 грн |
12+ | 79.84 грн |
32+ | 75.19 грн |
500+ | 74.41 грн |
FQB27P06TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
FQB34P10TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 458 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 209.53 грн |
5+ | 173.63 грн |
7+ | 134.10 грн |
19+ | 127.12 грн |
FXL4TD245BQX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Supply voltage: 1.1...3.6V DC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: DQFN16
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Supply voltage: 1.1...3.6V DC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: DQFN16
на замовлення 2036 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 65.89 грн |
25+ | 64.34 грн |
39+ | 62.01 грн |
500+ | 60.46 грн |
1000+ | 59.69 грн |
HCPL2531M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
CTR@If: 19-50%@16mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
CTR@If: 19-50%@16mA
на замовлення 1087 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 177.81 грн |
5+ | 111.62 грн |
11+ | 86.37 грн |
29+ | 81.65 грн |
500+ | 78.29 грн |
HCPL2531SDM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 1Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 1Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
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MC7805CTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220AB; THT; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 7...20V
Manufacturer series: MC7800
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220AB; THT; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 7...20V
Manufacturer series: MC7800
на замовлення 1501 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 69.29 грн |
13+ | 31.63 грн |
50+ | 25.73 грн |
58+ | 15.74 грн |
159+ | 14.88 грн |
RFD14N05LSM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: 50V
Drain current: 14A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: 50V
Drain current: 14A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±10V
на замовлення 136 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.78 грн |
10+ | 54.49 грн |
23+ | 41.08 грн |
61+ | 38.76 грн |
RFD14N05LSM9A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 79.30 грн |
10+ | 46.97 грн |
33+ | 27.75 грн |
91+ | 26.20 грн |
500+ | 25.19 грн |
BC808-25LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 34 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 11.63 грн |
MJE172G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 363 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.12 грн |
10+ | 44.80 грн |
38+ | 24.49 грн |
102+ | 23.10 грн |
MC74VHC245DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
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MJF44H11G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
на замовлення 66 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 131.89 грн |
10+ | 100.77 грн |
11+ | 82.94 грн |
31+ | 79.06 грн |
MC74HC4040ADR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Number of channels: 1
Number of inputs: 2
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Number of channels: 1
Number of inputs: 2
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
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MC74HC4040ADTR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Number of channels: 1
Number of inputs: 2
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Number of channels: 1
Number of inputs: 2
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
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FSA2275AUMX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Kind of package: reel; tape
Mounting: SMD
Case: UMLP12
Supply voltage: 2.5...5.5V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Kind of package: reel; tape
Mounting: SMD
Case: UMLP12
Supply voltage: 2.5...5.5V DC
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FSA2275UMX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Kind of package: reel; tape
Mounting: SMD
Case: UMLP12
Supply voltage: 2.5...5.5V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Kind of package: reel; tape
Mounting: SMD
Case: UMLP12
Supply voltage: 2.5...5.5V DC
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FSA2276UMX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Kind of package: reel; tape
Mounting: SMD
Case: UMLP12
Supply voltage: 1.65...5.5V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Kind of package: reel; tape
Mounting: SMD
Case: UMLP12
Supply voltage: 1.65...5.5V DC
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MC14503BDG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Operating temperature: -55...125°C
Case: SOIC16
Number of inputs: 1
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 6
Kind of output: 3-state
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: 3-state; buffer; hex
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Operating temperature: -55...125°C
Case: SOIC16
Number of inputs: 1
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 6
Kind of output: 3-state
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: 3-state; buffer; hex
Mounting: SMD
на замовлення 66 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 92.66 грн |
10+ | 42.32 грн |
25+ | 35.81 грн |
27+ | 34.57 грн |
48+ | 32.17 грн |
BZX79C15 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
на замовлення 2972 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.35 грн |
68+ | 5.74 грн |
84+ | 4.65 грн |
180+ | 2.15 грн |
500+ | 1.44 грн |
686+ | 1.33 грн |
1000+ | 1.27 грн |
1887+ | 1.26 грн |
BZX79C3V3 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; bulk; CASE017AG; single diode; 25uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 25µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; bulk; CASE017AG; single diode; 25uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 25µA
Manufacturer series: BZX79C
на замовлення 2888 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.18 грн |
69+ | 5.66 грн |
73+ | 5.31 грн |
160+ | 2.43 грн |
500+ | 2.29 грн |
MC7805BD2TG | ![]() |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
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MC7805BD2TR4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
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FCH067N65S3-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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MC14022BDG | ![]() |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; counter; Ch: 8; CMOS; SMD; SO16
Type of integrated circuit: digital
Number of channels: 8
Technology: CMOS
Kind of integrated circuit: counter
Mounting: SMD
Case: SO16
Category: Counters/dividers
Description: IC: digital; counter; Ch: 8; CMOS; SMD; SO16
Type of integrated circuit: digital
Number of channels: 8
Technology: CMOS
Kind of integrated circuit: counter
Mounting: SMD
Case: SO16
на замовлення 2022 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.28 грн |
10+ | 39.61 грн |
25+ | 32.79 грн |
48+ | 30.08 грн |
BC858ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1339 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.51 грн |
84+ | 4.65 грн |
142+ | 2.74 грн |
500+ | 1.87 грн |
900+ | 1.01 грн |
BAV70M3T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT723; Ufmax: 1.25V; 640mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT723
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.64W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT723; Ufmax: 1.25V; 640mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT723
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.64W
на замовлення 7960 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
38+ | 11.19 грн |
61+ | 6.43 грн |
96+ | 4.06 грн |
112+ | 3.46 грн |
405+ | 2.24 грн |
1000+ | 2.15 грн |
1114+ | 2.12 грн |
2000+ | 2.04 грн |
BC807-40WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 6026 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.36 грн |
52+ | 7.60 грн |
100+ | 4.64 грн |
449+ | 2.02 грн |
1232+ | 1.91 грн |
SBC807-40LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2870 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.70 грн |
37+ | 10.70 грн |
48+ | 8.14 грн |
115+ | 3.37 грн |
380+ | 2.39 грн |
1045+ | 2.26 грн |
SBC807-40LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SBC807-40WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 1439 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.70 грн |
43+ | 9.22 грн |
59+ | 6.60 грн |
100+ | 5.68 грн |
245+ | 3.71 грн |
673+ | 3.50 грн |