| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| NCP110AMX100TBG | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1V; 100mA; XDFN4; SMD Mounting: SMD Operating temperature: -40...125°C Manufacturer series: NCP110 Kind of voltage regulator: fixed; LDO; linear Input voltage: 1.1...5.5V Output current: 0.1A Type of integrated circuit: voltage regulator Protection: overheating OTP Voltage drop: 0.13V Output voltage: 1V Case: XDFN4 Number of channels: 1 Tolerance: ±2% |
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| NCP110AMX180TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN4; SMD Manufacturer series: NCP110 Case: XDFN4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Protection: overheating OTP Mounting: SMD Operating temperature: -40...125°C Output current: 0.2A Voltage drop: 0.12V Output voltage: 1.8V Number of channels: 1 Input voltage: 1.1...5.5V Tolerance: ±2% |
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| NCP110AMX280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN4; SMD Manufacturer series: NCP110 Case: XDFN4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Protection: overheating OTP Mounting: SMD Operating temperature: -40...125°C Output current: 0.2A Voltage drop: 0.1V Output voltage: 2.8V Number of channels: 1 Input voltage: 1.1...5.5V Tolerance: ±2% |
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| NCP51810AMNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15 Kind of integrated circuit: gate driver; high-side; low-side Case: QFN15 Type of integrated circuit: driver Technology: GaN Mounting: SMD Operating temperature: -40...125°C Output current: -2...1A Supply voltage: 9...17V DC Topology: H-bridge |
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| NSVIMD10AMT1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Power dissipation: 285mW Kind of transistor: BRT; complementary pair Case: SC74R Type of transistor: NPN / PNP Mounting: SMD Collector current: 0.1A Collector-emitter voltage: 50V Current gain: 68...600 Quantity in set/package: 3000pcs. Base-emitter resistor: 10kΩ Base resistor: 13/0.13kΩ Kind of package: reel; tape Application: automotive industry Polarisation: bipolar |
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RS1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
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| RS1GFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
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| UJ3D1250K2 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 134W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1200V Max. forward impulse current: 275A Power dissipation: 134W Kind of package: tube |
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| UJ3D1202TS | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 5.5W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1200V Max. forward impulse current: 27A Power dissipation: 5.5W Kind of package: tube |
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| UJ3D1205TS | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 13W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1200V Max. forward impulse current: 63A Power dissipation: 13W Kind of package: tube |
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| UJ3D1210K2 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1200V Max. forward impulse current: 110A Kind of package: tube |
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| UJ3D1210KS | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; 26.6W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1200V Max. forward impulse current: 110A Power dissipation: 26.6W Kind of package: tube |
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| UJ3D1210KSD | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube Case: TO247-3 Type of diode: Schottky rectifying Mounting: THT Technology: SiC Power dissipation: 13W Max. forward voltage: 1200V Load current: 5A Max. forward impulse current: 63A Max. off-state voltage: 1.2kV Kind of package: tube Semiconductor structure: single diode |
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| UJ3D1210TS | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 26.5W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1200V Max. forward impulse current: 110A Power dissipation: 26.5W Kind of package: tube |
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| UJ3D1220K2 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 55W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1200V Max. forward impulse current: 180A Power dissipation: 55W Kind of package: tube |
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| UJ3D1250K | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; 134W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1200V Max. forward impulse current: 275A Power dissipation: 134W Kind of package: tube |
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1N5373BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 68V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 68V Kind of package: bulk Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
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| 1N5373BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 68V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 68V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
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| SZ1SMB5913BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB Application: automotive industry |
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1N5366BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 39V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 39V Mounting: THT Tolerance: ±5% Case: CASE017AA Kind of package: bulk Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 1445 шт: термін постачання 14-30 дні (днів) |
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| 1N5366BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 39V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 39V Mounting: THT Tolerance: ±5% Case: CASE017AA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1N53xxB |
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| MC33064D-5R2G | ONSEMI |
 Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR); voltage detector Kind of RESET output: open drain Active logical level: low Case: SOIC8 Operating temperature: -40...85°C Mounting: SMD Threshold on-voltage: 4.61V Number of channels: 1 Supply voltage: 6.5V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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MUN5211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 60 |
на замовлення 1274 шт: термін постачання 14-30 дні (днів) |
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SMUN5211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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SMUN5211T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSVMUN5211DW1T2G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ Manufacturer standard package: 3000pcs. Current gain: 35...60 |
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NC7SU04M5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 1uA Type of integrated circuit: digital Case: SOT23-5 Supply voltage: 2...6V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 1µA Number of inputs: 1 Kind of gate: NOT Number of channels: single; 1 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MM3Z3V0ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
на замовлення 810 шт: термін постачання 14-30 дні (днів) |
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MMSZ5225BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 2484 шт: термін постачання 14-30 дні (днів) |
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MMSZ4683T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode Semiconductor structure: single diode Mounting: SMD Case: SOD123 Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Tolerance: ±5% Kind of package: reel; tape Manufacturer series: MMSZ4xxTxG |
на замовлення 239 шт: термін постачання 14-30 дні (днів) |
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SZMMSZ4683T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode Application: automotive industry Semiconductor structure: single diode Mounting: SMD Case: SOD123 Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Tolerance: ±5% Kind of package: reel; tape Manufacturer series: MMSZ4xxTxG |
на замовлення 2946 шт: термін постачання 14-30 дні (днів) |
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| MM5Z3V0T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode; MM5Z Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD523F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM5Z |
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| SZMM5Z3V0T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD523F Mounting: SMD Tolerance: ±7% Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| NSBC115EDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...150 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 100kΩ Base-emitter resistor: 100kΩ |
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LM2904VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA |
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| S3MB | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.15V Kind of package: reel; tape Reverse recovery time: 1.5µs |
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| EFC4627R-TR | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; N; 12V; 6A; 1.4W; SMD4 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Technology: PowerTrench® Gate charge: 13.4nC Power dissipation: 1.4W Drain current: 6A Gate-source voltage: 10V Drain-source voltage: 12V Polarisation: N Case: SMD4 |
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| HUF76639S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: TO263AB Polarisation: unipolar Gate charge: 71nC On-state resistance: 26mΩ Gate-source voltage: ±16V Drain current: 50A Drain-source voltage: 100V Power dissipation: 180W |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
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MUN5133DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| NSVMUN5133DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.385W Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Current gain: 80...140 Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Application: automotive industry Polarisation: bipolar |
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| FT7522L6X | ONSEMI |
Category: Counters/dividers Description: IC: supervisor circuit; voltage detector; open drain; MicroPak6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: open drain Active logical level: low Case: MicroPak6 Operating temperature: -40...85°C Mounting: SMD Supply voltage: 1.65...5V |
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LM258N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: dual; 2 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP8 Operating temperature: -40...105°C Slew rate: 0.6V/μs |
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FDP2572 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO220AB Kind of package: tube Polarisation: unipolar Gate charge: 34nC On-state resistance: 146mΩ Drain current: 20A Gate-source voltage: ±20V Power dissipation: 135W Drain-source voltage: 150V |
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FDP2552 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO220AB Kind of package: tube Polarisation: unipolar On-state resistance: 97mΩ Drain current: 26A Gate-source voltage: ±20V Power dissipation: 150W Drain-source voltage: 150V |
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В кошику од. на суму грн. | ||||||||||||||||||
| NCV2003SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
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| NCV20032DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: SO8 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
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| NCS20282FCTTAG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 2.5÷5.5VDC; WLCSP9; 1.5mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: WLCSP9 Operating temperature: -40...125°C Integrated circuit features: rail-to-rail Kind of package: reel; tape Input bias current: 800pA Input offset current: 10pA Input offset voltage: 1.5mV Slew rate: 5V/μs |
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| NCV20032DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: Micro8 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
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 |
MBRS130T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
на замовлення 2068 шт: термін постачання 14-30 дні (днів) |
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MBRS120T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.6V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
на замовлення 58 шт: термін постачання 14-30 дні (днів) |
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| FOD8480 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V Type of optocoupler: optocoupler Mounting: SMD Case: SOP6 Output voltage: -0.5...35V Turn-off time: 10ns Turn-on time: 15ns Number of channels: 1 Max. off-state voltage: 5V Insulation voltage: 5kV Manufacturer series: FOD848x Slew rate: 40kV/μs |
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Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| EMX1DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape |
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| NSVEMX1DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| 74LVT245WMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: BiCMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2.7...3.6V DC |
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| 1SMB5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Type of diode: Zener Power dissipation: 3W Zener voltage: 43V Manufacturer series: 1SMB59xxB Semiconductor structure: single diode |
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 |
1SMA5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 43V Manufacturer series: 1SMA59xxBT3G Semiconductor structure: single diode |
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| SZ1SMB5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Type of diode: Zener Power dissipation: 3W Zener voltage: 43V Manufacturer series: 1SMB59xxB Application: automotive industry Semiconductor structure: single diode |
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| SZ1SMA5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 43V Manufacturer series: 1SMA59xxBT3G Application: automotive industry Semiconductor structure: single diode |
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| HGTD1N120BNS9A | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 2.7A Power dissipation: 60W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 6A Mounting: SMD Gate charge: 21nC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| MMBFJ175 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 7mA Power dissipation: 0.225W Case: SOT23 On-state resistance: 125Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Gate-source voltage: 30V |
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Мінімальне замовлення: 5 шт В кошику од. на суму грн. |
| NCP110AMX100TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 100mA; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer series: NCP110
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.1...5.5V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Protection: overheating OTP
Voltage drop: 0.13V
Output voltage: 1V
Case: XDFN4
Number of channels: 1
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 100mA; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer series: NCP110
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.1...5.5V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Protection: overheating OTP
Voltage drop: 0.13V
Output voltage: 1V
Case: XDFN4
Number of channels: 1
Tolerance: ±2%
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| NCP110AMX180TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN4; SMD
Manufacturer series: NCP110
Case: XDFN4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Protection: overheating OTP
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.2A
Voltage drop: 0.12V
Output voltage: 1.8V
Number of channels: 1
Input voltage: 1.1...5.5V
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN4; SMD
Manufacturer series: NCP110
Case: XDFN4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Protection: overheating OTP
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.2A
Voltage drop: 0.12V
Output voltage: 1.8V
Number of channels: 1
Input voltage: 1.1...5.5V
Tolerance: ±2%
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| NCP110AMX280TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN4; SMD
Manufacturer series: NCP110
Case: XDFN4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Protection: overheating OTP
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.2A
Voltage drop: 0.1V
Output voltage: 2.8V
Number of channels: 1
Input voltage: 1.1...5.5V
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN4; SMD
Manufacturer series: NCP110
Case: XDFN4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Protection: overheating OTP
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.2A
Voltage drop: 0.1V
Output voltage: 2.8V
Number of channels: 1
Input voltage: 1.1...5.5V
Tolerance: ±2%
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| NCP51810AMNTWG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN15
Type of integrated circuit: driver
Technology: GaN
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...1A
Supply voltage: 9...17V DC
Topology: H-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN15
Type of integrated circuit: driver
Technology: GaN
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...1A
Supply voltage: 9...17V DC
Topology: H-bridge
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| NSVIMD10AMT1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Power dissipation: 285mW
Kind of transistor: BRT; complementary pair
Case: SC74R
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Current gain: 68...600
Quantity in set/package: 3000pcs.
Base-emitter resistor: 10kΩ
Base resistor: 13/0.13kΩ
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Power dissipation: 285mW
Kind of transistor: BRT; complementary pair
Case: SC74R
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Current gain: 68...600
Quantity in set/package: 3000pcs.
Base-emitter resistor: 10kΩ
Base resistor: 13/0.13kΩ
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
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| RS1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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| RS1GFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| UJ3D1250K2 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 134W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1200V
Max. forward impulse current: 275A
Power dissipation: 134W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 134W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1200V
Max. forward impulse current: 275A
Power dissipation: 134W
Kind of package: tube
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| UJ3D1202TS |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 5.5W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 27A
Power dissipation: 5.5W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 5.5W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 27A
Power dissipation: 5.5W
Kind of package: tube
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| UJ3D1205TS |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 13W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 63A
Power dissipation: 13W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 13W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 63A
Power dissipation: 13W
Kind of package: tube
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| UJ3D1210K2 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Kind of package: tube
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| UJ3D1210KS |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; 26.6W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Power dissipation: 26.6W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; 26.6W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Power dissipation: 26.6W
Kind of package: tube
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| UJ3D1210KSD |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
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| UJ3D1210TS |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 26.5W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Power dissipation: 26.5W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 26.5W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Power dissipation: 26.5W
Kind of package: tube
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| UJ3D1220K2 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 55W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1200V
Max. forward impulse current: 180A
Power dissipation: 55W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 55W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1200V
Max. forward impulse current: 180A
Power dissipation: 55W
Kind of package: tube
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| UJ3D1250K |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; 134W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 275A
Power dissipation: 134W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; 134W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 275A
Power dissipation: 134W
Kind of package: tube
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| 1N5373BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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| 1N5373BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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| SZ1SMB5913BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| 1N5366BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 1445 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 18+ | 23.55 грн |
| 21+ | 20.51 грн |
| 100+ | 13.67 грн |
| 250+ | 12.68 грн |
| 1N5366BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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| MC33064D-5R2G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: SOIC8
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 4.61V
Number of channels: 1
Supply voltage: 6.5V
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: SOIC8
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 4.61V
Number of channels: 1
Supply voltage: 6.5V
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Мінімальне замовлення: 2500 шт
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| MUN5211T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
на замовлення 1274 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 93+ | 4.45 грн |
| 124+ | 3.33 грн |
| 139+ | 2.98 грн |
| 500+ | 2.39 грн |
| 1000+ | 2.15 грн |
| SMUN5211T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 10.71 грн |
| SMUN5211T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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Мінімальне замовлення: 10000 шт
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| NSVMUN5211DW1T2G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 35...60
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| NC7SU04M5X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 1uA
Type of integrated circuit: digital
Case: SOT23-5
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 1µA
Number of inputs: 1
Kind of gate: NOT
Number of channels: single; 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 1uA
Type of integrated circuit: digital
Case: SOT23-5
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 1µA
Number of inputs: 1
Kind of gate: NOT
Number of channels: single; 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.98 грн |
| 76+ | 5.44 грн |
| 90+ | 4.61 грн |
| 112+ | 3.69 грн |
| 158+ | 2.61 грн |
| 250+ | 2.26 грн |
| MM3Z3V0ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 810 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.32 грн |
| 109+ | 3.79 грн |
| 122+ | 3.38 грн |
| 191+ | 2.17 грн |
| 250+ | 1.76 грн |
| 500+ | 1.72 грн |
| MMSZ5225BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2484 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.76 грн |
| 76+ | 5.44 грн |
| 96+ | 4.32 грн |
| 130+ | 3.18 грн |
| 160+ | 2.59 грн |
| 200+ | 2.18 грн |
| 500+ | 1.84 грн |
| 1000+ | 1.67 грн |
| 1500+ | 1.61 грн |
| MMSZ4683T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Tolerance: ±5%
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Tolerance: ±5%
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
на замовлення 239 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.21 грн |
| 112+ | 3.71 грн |
| 152+ | 2.72 грн |
| 175+ | 2.36 грн |
| SZMMSZ4683T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode
Application: automotive industry
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Tolerance: ±5%
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode
Application: automotive industry
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Tolerance: ±5%
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
на замовлення 2946 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.63 грн |
| 36+ | 11.69 грн |
| 42+ | 9.88 грн |
| 100+ | 6.12 грн |
| 500+ | 4.78 грн |
| 1000+ | 4.35 грн |
| MM5Z3V0T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5Z
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| SZMM5Z3V0T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±7%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±7%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| NSBC115EDXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
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| LM2904VDR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
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| S3MB |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
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| EFC4627R-TR |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; N; 12V; 6A; 1.4W; SMD4
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Gate charge: 13.4nC
Power dissipation: 1.4W
Drain current: 6A
Gate-source voltage: 10V
Drain-source voltage: 12V
Polarisation: N
Case: SMD4
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; N; 12V; 6A; 1.4W; SMD4
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Gate charge: 13.4nC
Power dissipation: 1.4W
Drain current: 6A
Gate-source voltage: 10V
Drain-source voltage: 12V
Polarisation: N
Case: SMD4
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| HUF76639S3ST |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 26mΩ
Gate-source voltage: ±16V
Drain current: 50A
Drain-source voltage: 100V
Power dissipation: 180W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 26mΩ
Gate-source voltage: ±16V
Drain current: 50A
Drain-source voltage: 100V
Power dissipation: 180W
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Мінімальне замовлення: 800 шт
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| MUN5133DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
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Мінімальне замовлення: 3000 шт
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| NSVMUN5133DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.385W
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Current gain: 80...140
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.385W
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Current gain: 80...140
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Polarisation: bipolar
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| FT7522L6X |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: supervisor circuit; voltage detector; open drain; MicroPak6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: MicroPak6
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 1.65...5V
Category: Counters/dividers
Description: IC: supervisor circuit; voltage detector; open drain; MicroPak6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: MicroPak6
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 1.65...5V
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| LM258N |
|
Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
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| FDP2572 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 146mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 135W
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 146mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 135W
Drain-source voltage: 150V
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| FDP2552 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
On-state resistance: 97mΩ
Drain current: 26A
Gate-source voltage: ±20V
Power dissipation: 150W
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
On-state resistance: 97mΩ
Drain current: 26A
Gate-source voltage: ±20V
Power dissipation: 150W
Drain-source voltage: 150V
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| NCV2003SN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| NCV20032DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| NCS20282FCTTAG |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 2.5÷5.5VDC; WLCSP9; 1.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: WLCSP9
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Input bias current: 800pA
Input offset current: 10pA
Input offset voltage: 1.5mV
Slew rate: 5V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 2.5÷5.5VDC; WLCSP9; 1.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: WLCSP9
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Input bias current: 800pA
Input offset current: 10pA
Input offset voltage: 1.5mV
Slew rate: 5V/μs
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| NCV20032DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| MBRS130T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
на замовлення 2068 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.27 грн |
| 22+ | 18.78 грн |
| 25+ | 16.47 грн |
| 50+ | 12.85 грн |
| 100+ | 11.78 грн |
| 500+ | 9.88 грн |
| 1000+ | 9.14 грн |
| MBRS120T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.78 грн |
| 15+ | 28.99 грн |
| 50+ | 20.75 грн |
| FOD8480 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP6
Output voltage: -0.5...35V
Turn-off time: 10ns
Turn-on time: 15ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Manufacturer series: FOD848x
Slew rate: 40kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP6
Output voltage: -0.5...35V
Turn-off time: 10ns
Turn-on time: 15ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Manufacturer series: FOD848x
Slew rate: 40kV/μs
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Мінімальне замовлення: 2000 шт
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| EMX1DXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
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| NSVEMX1DXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| 74LVT245WMX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: BiCMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2.7...3.6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: BiCMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2.7...3.6V DC
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| 1SMB5940BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Semiconductor structure: single diode
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| 1SMA5940BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Semiconductor structure: single diode
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| SZ1SMB5940BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Application: automotive industry
Semiconductor structure: single diode
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| SZ1SMA5940BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Semiconductor structure: single diode
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| HGTD1N120BNS9A |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.7A
Power dissipation: 60W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 6A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.7A
Power dissipation: 60W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 6A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| MMBFJ175 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
товару немає в наявності
Мінімальне замовлення: 5 шт
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од. на суму грн.