| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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74VHCT14AMX | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
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MC74VHCT14ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Technology: CMOS; TTL Mounting: SMD Case: SO14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Quiescent current: 40µA Number of inputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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MC74VHCT14ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; SMD Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHCT Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT Operating temperature: -55...125°C Number of inputs: 1 Kind of integrated circuit: hex; inverter; Schmitt trigger |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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S1K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 6.6pF Power dissipation: 1.4W Features of semiconductor devices: glass passivated |
на замовлення 1871 шт: термін постачання 14-30 дні (днів) |
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S1KFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1.2A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDC8886 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W Pulsed drain current: 25A Power dissipation: 1.6W Gate charge: 7.4nC Polarisation: unipolar Technology: PowerTrench® Drain current: 6.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 36mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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MMBTA13LT3G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; 30V; 300mA; 225mW; SOT23-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23-3 Mounting: SMD Frequency: 125MHz |
на замовлення 90000 шт: термін постачання 14-30 дні (днів) |
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MC74AC540DWG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal Number of channels: 8 Mounting: SMD Case: SOIC20 Manufacturer series: AC Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Supply voltage: 2...6V DC Technology: CMOS Family: AC |
на замовлення 214 шт: термін постачання 14-30 дні (днів) |
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| 74AC540SCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; AC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: SO20-W Manufacturer series: AC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 40µA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
| MC74AC540DWR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal Number of channels: 8 Mounting: SMD Case: SOIC20 Manufacturer series: AC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Technology: CMOS Family: AC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
| FDMS039N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56 Pulsed drain current: 400A Power dissipation: 104W Gate charge: 0.1µC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 3.9mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMS0300S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56 Pulsed drain current: 180A Power dissipation: 96W Gate charge: 133nC Polarisation: unipolar Drain current: 49A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 2.5mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMS0309AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Pulsed drain current: 100A Power dissipation: 50W Gate charge: 47nC Polarisation: unipolar Technology: PowerTrench® Drain current: 49A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 4.8mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMS0310AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Pulsed drain current: 100A Power dissipation: 41W Gate charge: 37nC Polarisation: unipolar Technology: PowerTrench® Drain current: 22A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 6mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMS0312AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56 Pulsed drain current: 100A Power dissipation: 36W Gate charge: 31nC Polarisation: unipolar Technology: PowerTrench® Drain current: 22A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 6.8mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MJ21195G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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| 1N5927BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 12V; CASE59; single diode; bulk; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N59xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NSR0320MW2T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 23V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR0320XV6T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT563; SMD; 23V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOT563 Mounting: SMD Max. off-state voltage: 23V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 7A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBT2222A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 1W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
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MM3Z5V1C | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3Z |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBC143ZDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 4000pcs. Current gain: 80...200 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NSBC143ZF3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 80...200 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NVMFS5C628NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 900A Power dissipation: 56W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NVMFS5C628NLAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 900A Power dissipation: 56W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NVMFS5C628NLWFAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
| NVMFS5C628NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 900A Power dissipation: 56W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NVMFS5C628NWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 900A Power dissipation: 56W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDA69N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 44.2A Pulsed drain current: 276A Power dissipation: 480W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 41mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
на замовлення 151 шт: термін постачання 14-30 дні (днів) |
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FDP52N20 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 200V Drain current: 33A Power dissipation: 357W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 134 шт: термін постачання 14-30 дні (днів) |
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MBRS2H100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.65V Max. load current: 130A Kind of package: reel; tape |
на замовлення 172 шт: термін постачання 14-30 дні (днів) |
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| 74LVTH162244MTD | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; BiCMOS; SMD Technology: BiCMOS Case: TSSOP48 Mounting: SMD Kind of package: tube Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 16 Supply voltage: 2.7...3.6V DC Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 3800 шт В кошику од. на суму грн. | |||||||||||||||
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2V7002WT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W; ESD Mounting: SMD Case: SC70; SOT323 Pulsed drain current: 1.4A Power dissipation: 0.28W Gate charge: 0.7nC Polarisation: unipolar Version: ESD Drain current: 0.22A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 2.5Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NCV8720BMT120TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.35A; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V Output current: 0.35A Case: WDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8720BMT110TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.35A; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.1V Output current: 0.35A Case: WDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8720BMTW090TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 0.35A; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 0.9V Output current: 0.35A Case: WDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8720BMTW120TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.35A; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V Output current: 0.35A Case: WDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FAN7081MX-GF085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; MillerDrive™; SO8; -500÷250mA Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Technology: MillerDrive™ Case: SO8 Output current: -500...250mA Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 10ns Application: automotive industry Kind of package: reel; tape Kind of output: inverting Voltage class: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5230B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
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SZMMSZ5230BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZMMSZ4V7T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SZMM5Z4V7T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SOD523F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FCP190N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ8V2ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZMMSZ8V2ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZMMSZ8V2T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP51400MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Operating temperature: -40...125°C Output current: 3A Type of integrated circuit: PMIC Application: for DDR memories Output voltage: -0.1...3.5V Case: DFN10 Kind of integrated circuit: DDR memory termination regulator Number of channels: 1 Operating voltage: 0.5...1.8/2.375...5.5V DC Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCP51401MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Operating temperature: -40...125°C Output current: 3A Type of integrated circuit: PMIC Application: for DDR memories Output voltage: -0.1...3.5V Case: DFN10 Kind of integrated circuit: DDR memory termination regulator Number of channels: 1 Operating voltage: 0.5...1.8/2.375...5.5V DC Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCP51402MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Operating temperature: -40...125°C Output current: 3A Type of integrated circuit: PMIC Application: for DDR memories Output voltage: -0.1...3.5V Case: DFN10 Kind of integrated circuit: DDR memory termination regulator Number of channels: 1 Operating voltage: 0.5...1.8/2.375...5.5V DC Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV51400MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Operating temperature: max. 150°C Output current: 3A Type of integrated circuit: PMIC Application: automotive industry; for DDR memories Output voltage: -0.1...3.5V Case: DFN10 Kind of integrated circuit: DDR memory termination regulator Number of channels: 1 Operating voltage: 0.5...1.8/2.375...5.5V DC Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV51400MWTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Operating temperature: max. 150°C Output current: 3A Type of integrated circuit: PMIC Application: automotive industry; for DDR memories Output voltage: -0.1...3.5V Case: DFN10 Kind of integrated circuit: DDR memory termination regulator Number of channels: 1 Operating voltage: 0.5...1.8/2.375...5.5V DC Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| FAN251040MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SMD; reel,tape Type of integrated circuit: PMIC Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP81140MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; QFN32; buck; 4÷6.5VDC Operating temperature: -40...100°C Output current: 850µA Type of integrated circuit: PMIC Case: QFN32 Number of channels: 1 Frequency: 290...590kHz Operating voltage: 4...6.5V DC Topology: buck Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
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MMBT3904 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
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1N4756A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 47V; DO41; single diode; bulk; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 47V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT54C | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
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1N4007 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Power dissipation: 3W |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
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MMSZ4706T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 19V; SMD; SOD123; single diode; reel,tape Tolerance: ±5% Manufacturer series: MMSZ4xxTxG Mounting: SMD Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 19V Type of diode: Zener |
на замовлення 127 шт: термін постачання 14-30 дні (днів) |
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MC74HC20ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Kind of package: reel; tape Family: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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MC74HC20ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: SO14 Kind of package: tube Family: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 6710 шт В кошику од. на суму грн. |
| 74VHCT14AMX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| MC74VHCT14ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of inputs: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74VHCT14ADTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; SMD
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Operating temperature: -55...125°C
Number of inputs: 1
Kind of integrated circuit: hex; inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; SMD
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Operating temperature: -55...125°C
Number of inputs: 1
Kind of integrated circuit: hex; inverter; Schmitt trigger
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S1K |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 6.6pF
Power dissipation: 1.4W
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 6.6pF
Power dissipation: 1.4W
Features of semiconductor devices: glass passivated
на замовлення 1871 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.11 грн |
| 43+ | 9.82 грн |
| 52+ | 7.94 грн |
| 100+ | 7.47 грн |
| 176+ | 5.38 грн |
| 483+ | 5.08 грн |
| S1KFP |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| FDC8886 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Pulsed drain current: 25A
Power dissipation: 1.6W
Gate charge: 7.4nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 36mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Pulsed drain current: 25A
Power dissipation: 1.6W
Gate charge: 7.4nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 36mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBTA13LT3G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; 30V; 300mA; 225mW; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23-3
Mounting: SMD
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; 30V; 300mA; 225mW; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23-3
Mounting: SMD
Frequency: 125MHz
на замовлення 90000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30000+ | 1.46 грн |
| MC74AC540DWG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Technology: CMOS
Family: AC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Technology: CMOS
Family: AC
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.88 грн |
| 10+ | 52.82 грн |
| 48+ | 51.99 грн |
| 74AC540SCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 40µA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MC74AC540DWR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Technology: CMOS
Family: AC
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Technology: CMOS
Family: AC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FDMS039N08B |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Pulsed drain current: 400A
Power dissipation: 104W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 3.9mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Pulsed drain current: 400A
Power dissipation: 104W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 3.9mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| FDMS0300S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Pulsed drain current: 180A
Power dissipation: 96W
Gate charge: 133nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 2.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Pulsed drain current: 180A
Power dissipation: 96W
Gate charge: 133nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 2.5mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| FDMS0309AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Pulsed drain current: 100A
Power dissipation: 50W
Gate charge: 47nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 4.8mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Pulsed drain current: 100A
Power dissipation: 50W
Gate charge: 47nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 4.8mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| FDMS0310AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Pulsed drain current: 100A
Power dissipation: 41W
Gate charge: 37nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 6mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Pulsed drain current: 100A
Power dissipation: 41W
Gate charge: 37nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 6mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| FDMS0312AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Pulsed drain current: 100A
Power dissipation: 36W
Gate charge: 31nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 6.8mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Pulsed drain current: 100A
Power dissipation: 36W
Gate charge: 31nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 6.8mΩ
Mounting: SMD
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| MJ21195G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 649.69 грн |
| 3+ | 430.80 грн |
| 7+ | 406.86 грн |
| 25+ | 391.18 грн |
| 1N5927BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; CASE59; single diode; bulk; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; CASE59; single diode; bulk; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N59xxB
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| NSR0320MW2T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 5A
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| NSR0320XV6T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT563
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT563
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 7A
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| MMBT2222A |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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Мінімальне замовлення: 10 шт
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| MM3Z5V1C |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3Z
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| NSBC143ZDXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 4000pcs.
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 4000pcs.
Current gain: 80...200
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| NSBC143ZF3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...200
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| NVMFS5C628NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS5C628NLAFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS5C628NLWFAFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 1500 шт
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| NVMFS5C628NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS5C628NWFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDA69N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 151 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 308.40 грн |
| 4+ | 241.81 грн |
| 11+ | 228.60 грн |
| FDP52N20 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 134 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.07 грн |
| 9+ | 112.24 грн |
| 24+ | 106.46 грн |
| MBRS2H100T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.65V
Max. load current: 130A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.65V
Max. load current: 130A
Kind of package: reel; tape
на замовлення 172 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.10 грн |
| 13+ | 33.84 грн |
| 15+ | 28.97 грн |
| 50+ | 20.63 грн |
| 51+ | 18.73 грн |
| 100+ | 18.40 грн |
| 139+ | 17.66 грн |
| 74LVTH162244MTD |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; BiCMOS; SMD
Technology: BiCMOS
Case: TSSOP48
Mounting: SMD
Kind of package: tube
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; BiCMOS; SMD
Technology: BiCMOS
Case: TSSOP48
Mounting: SMD
Kind of package: tube
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
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Мінімальне замовлення: 3800 шт
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| 2V7002WT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W; ESD
Mounting: SMD
Case: SC70; SOT323
Pulsed drain current: 1.4A
Power dissipation: 0.28W
Gate charge: 0.7nC
Polarisation: unipolar
Version: ESD
Drain current: 0.22A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W; ESD
Mounting: SMD
Case: SC70; SOT323
Pulsed drain current: 1.4A
Power dissipation: 0.28W
Gate charge: 0.7nC
Polarisation: unipolar
Version: ESD
Drain current: 0.22A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.5Ω
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| NCV8720BMT120TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV8720BMT110TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.1V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.1V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV8720BMTW090TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.9V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.9V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV8720BMTW120TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| FAN7081MX-GF085 |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SO8; -500÷250mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Technology: MillerDrive™
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: inverting
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SO8; -500÷250mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Technology: MillerDrive™
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: inverting
Voltage class: 600V
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| MMSZ5230B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
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Мінімальне замовлення: 10 шт
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| SZMMSZ5230BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| SZMMSZ4V7T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| SZMM5Z4V7T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| FCP190N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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| MMSZ8V2ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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| SZMMSZ8V2ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| SZMMSZ8V2T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| NCP51400MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating temperature: -40...125°C
Output current: 3A
Type of integrated circuit: PMIC
Application: for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating temperature: -40...125°C
Output current: 3A
Type of integrated circuit: PMIC
Application: for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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| NCP51401MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating temperature: -40...125°C
Output current: 3A
Type of integrated circuit: PMIC
Application: for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating temperature: -40...125°C
Output current: 3A
Type of integrated circuit: PMIC
Application: for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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| NCP51402MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating temperature: -40...125°C
Output current: 3A
Type of integrated circuit: PMIC
Application: for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating temperature: -40...125°C
Output current: 3A
Type of integrated circuit: PMIC
Application: for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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| NCV51400MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating temperature: max. 150°C
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry; for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating temperature: max. 150°C
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry; for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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| NCV51400MWTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating temperature: max. 150°C
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry; for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating temperature: max. 150°C
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry; for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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| FAN251040MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
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| NCP81140MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN32; buck; 4÷6.5VDC
Operating temperature: -40...100°C
Output current: 850µA
Type of integrated circuit: PMIC
Case: QFN32
Number of channels: 1
Frequency: 290...590kHz
Operating voltage: 4...6.5V DC
Topology: buck
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN32; buck; 4÷6.5VDC
Operating temperature: -40...100°C
Output current: 850µA
Type of integrated circuit: PMIC
Case: QFN32
Number of channels: 1
Frequency: 290...590kHz
Operating voltage: 4...6.5V DC
Topology: buck
Mounting: SMD
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Мінімальне замовлення: 4000 шт
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| MMBT3904 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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Мінімальне замовлення: 25 шт
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| 1N4756A |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 47V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 47V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 1W; 47V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 47V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: bulk
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| BAT54C |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
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Мінімальне замовлення: 25 шт
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| 1N4007 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 3W
товару немає в наявності
Мінімальне замовлення: 10 шт
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| MMSZ4706T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; SOD123; single diode; reel,tape
Tolerance: ±5%
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 19V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; SOD123; single diode; reel,tape
Tolerance: ±5%
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 19V
Type of diode: Zener
на замовлення 127 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.11 грн |
| 97+ | 4.29 грн |
| 105+ | 3.96 грн |
| 127+ | 3.30 грн |
| MC74HC20ADTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
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Мінімальне замовлення: 7500 шт
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| MC74HC20ADG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: tube
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: tube
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 6710 шт
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од. на суму грн.