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FDD14AN06LA0-F085 FDD14AN06LA0-F085 ONSEMI fdd14an06l_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 50A
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 32nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 33mΩ
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MC10H124FNG MC10H124FNG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D0C3EB97820&compId=MC10H124FNG.pdf?ci_sign=bfa6616118030aaf438391c9ae2880e2f3187943 Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Type of integrated circuit: digital
Number of channels: 4
Kind of package: tube
Manufacturer series: 10H
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Operating temperature: 0...75°C
Case: PLCC20
Number of inputs: 5
Number of outputs: 8
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MC10H124FNR2G MC10H124FNR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D0C3EB97820&compId=MC10H124FNG.pdf?ci_sign=bfa6616118030aaf438391c9ae2880e2f3187943 Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: 10H
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Operating temperature: 0...75°C
Case: PLCC20
Number of inputs: 5
Number of outputs: 8
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MC10H125FNG MC10H125FNG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D9D75B07820&compId=MC10H125FNG.pdf?ci_sign=a36b44e44a8d84a1c2ea1b391e763d40cf1aae18 Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Type of integrated circuit: digital
Number of channels: 4
Kind of package: tube
Manufacturer series: 10H
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Operating temperature: 0...75°C
Case: PLCC20
Number of inputs: 8
Number of outputs: 4
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MC10H125FNR2G MC10H125FNR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D9D75B07820&compId=MC10H125FNG.pdf?ci_sign=a36b44e44a8d84a1c2ea1b391e763d40cf1aae18 Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: 10H
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Operating temperature: 0...75°C
Case: PLCC20
Number of inputs: 8
Number of outputs: 4
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CAT25040VI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C70760D5&compId=CAT25010-D.pdf?ci_sign=ce95be0e3f46d9f22d0f4b1eb8accd053c9655cb Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Operating temperature: -40...85°C
Case: SOIC8
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 4kb EEPROM
Mounting: SMD
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DF01M DF01M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE797B01887CA95C748&compId=DF005-10m.pdf?ci_sign=a2ba58420bf47aec9f9d95208f646afa11972b67 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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1N5360BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5360BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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MURS320T3G MURS320T3G ONSEMI murs320t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 818 шт:
термін постачання 21-30 дні (днів)
10+45.82 грн
14+30.26 грн
50+23.87 грн
67+13.87 грн
183+13.08 грн
Мінімальне замовлення: 10
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MURS480ET3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BCF858BD5560CE&compId=MURS480ET3G.PDF?ci_sign=a1d08ef18151d7efef07c515d5c9e865097430cd Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
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MURS105T3G ONSEMI murs120t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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MUR140RLG ONSEMI mur120-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
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FFSB0665A ONSEMI ffsb0665a-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 9A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Load current: 9A
Semiconductor structure: single diode
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FFSB0665B ONSEMI ffsb0665b-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
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FFSB0665B-F085 ONSEMI ffsb0665b-f085-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
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MM3Z33VT1G MM3Z33VT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 870 шт:
термін постачання 21-30 дні (днів)
56+7.64 грн
79+5.04 грн
115+3.45 грн
133+2.96 грн
583+1.58 грн
Мінімальне замовлення: 56
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SZMM3Z33VT1G SZMM3Z33VT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Manufacturer series: MM3ZxxT1G
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
21+18.91 грн
Мінімальне замовлення: 21
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DF005S DF005S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F719CFE3C74469&compId=DF005S.pdf?ci_sign=71de7becbc26bb3965fe3784af153c93ce6e0759 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 382 шт:
термін постачання 21-30 дні (днів)
10+42.77 грн
25+34.28 грн
39+24.12 грн
106+22.80 грн
Мінімальне замовлення: 10
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FDMC510P FDMC510P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF4A9FB488FE28&compId=FDMC510P.pdf?ci_sign=d08e6b2b6a6fde3eb522f243000d92dc86bb3da8 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Mounting: SMD
Case: MLP8
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
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FDMC510P-F106 ONSEMI FDMC510P-D.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -50A; 41W; MLP8
Mounting: SMD
Case: MLP8
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 12mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -50A
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FDME510PZT ONSEMI fdme510pzt-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET
Mounting: SMD
Case: MicroFET
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -15A
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FSQ321LX ONSEMI Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.6A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 19Ω
Power: 10W
Application: SMPS
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SZ1SMB5933BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NTBG060N065SC1 ONSEMI ntbg060n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Case: D2PAK-7
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 50mΩ
Power dissipation: 85W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Gate charge: 74nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...18V
Pulsed drain current: 130A
Mounting: SMD
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FCD600N60Z ONSEMI fcd600n60z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCD600N65S3R0 ONSEMI fcd600n65s3r0-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7660AS ONSEMI fdms7660as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS0310AS ONSEMI fdms0310as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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SZ1SMA5925BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 10V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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FQA40N25 FQA40N25 ONSEMI fqa40n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Gate charge: 110nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 160A
Mounting: THT
Case: TO3PN
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
2+292.75 грн
5+194.62 грн
13+184.38 грн
Мінімальне замовлення: 2
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MJD350T4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9CDDEC5F654143&compId=MJD340G.pdf?ci_sign=12472b6532ea9144316d04054ab6c4b191e42f7f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Mounting: SMD
Case: DPAK
Frequency: 10MHz
Collector-emitter voltage: 300V
Current gain: 30...240
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
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NZL6V8AXV3T1G ONSEMI nzl5v6axv3t1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 4.5V
Kind of package: reel; tape
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NZQA6V8AXV5T1G ONSEMI nzqa5v6axv5-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Mounting: SMD
Case: SOT553
Max. off-state voltage: 4.3V
Kind of package: reel; tape
Peak pulse power dissipation: 20W
Max. forward impulse current: 1.6A
Number of channels: 4
Version: ESD
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FGH50N3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EA4DD31AB4C0CE&compId=FGH50N3.PDF?ci_sign=1b08b89d55287b0337fe8ab3f2231b8c18eadf1b Category: THT IGBT transistors
Description: Transistor: IGBT; 300V; 75A; 463W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 300V
Collector current: 75A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 228nC
Kind of package: tube
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CPH6341-TL-W CPH6341-TL-W ONSEMI cph6341-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 1.6W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 10nC
Pulsed drain current: -20A
на замовлення 270 шт:
термін постачання 21-30 дні (днів)
9+50.91 грн
10+40.03 грн
48+19.38 грн
131+18.36 грн
Мінімальне замовлення: 9
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SZMM3Z3V0T1G SZMM3Z3V0T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
18+23.76 грн
29+13.63 грн
50+8.45 грн
100+6.97 грн
227+4.07 грн
623+3.85 грн
Мінімальне замовлення: 18
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N24RF64DWPT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A779660D5&compId=N24RF64-D.pdf?ci_sign=ef42442f3e5bcd8f97473c7ccf8fde5521ee39de Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C,RF; 8kx8bit/2kx32bit; 1.8÷5.5V
Mounting: SMD
Operating temperature: -40...105°C
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 64kb EEPROM
Case: SOIC8
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Kind of memory: EEPROM
Memory organisation: 8kx8bit/2kx32bit
Access time: 400ns
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N24RF64EDTPT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A7797A0D5&compId=N24RF64-D.pdf?ci_sign=cf625b6825d72ff851a42235a9d372140a84706f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C,RF; 8kx8bit/2kx32bit; 1.8÷5.5V
Mounting: SMD
Operating temperature: -40...105°C
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 64kb EEPROM
Case: TSSOP8
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Kind of memory: EEPROM
Memory organisation: 8kx8bit/2kx32bit
Access time: 400ns
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NSVBAT54HT1G ONSEMI bat54ht1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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NCP785AH150T1G NCP785AH150T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Operating temperature: -40...85°C
Tolerance: ±5%
Output voltage: 1.5V
Output current: 10mA
Type of integrated circuit: voltage regulator
Input voltage: 25...450V
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MM3Z4V7T1G MM3Z4V7T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 2741 шт:
термін постачання 21-30 дні (днів)
56+7.64 грн
79+5.04 грн
115+3.45 грн
134+2.95 грн
710+1.30 грн
1950+1.23 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MM3Z4V7ST1G MM3Z4V7ST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 8994 шт:
термін постачання 21-30 дні (днів)
56+7.67 грн
76+5.20 грн
149+2.65 грн
170+2.32 грн
185+2.14 грн
682+1.36 грн
1874+1.28 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MM5Z4V7T1G MM5Z4V7T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C405FC01D0A0D6&compId=MM5ZxxxT1G.PDF?ci_sign=50a5312bc1eb36c8e1e32b0a5807402ec676aafc Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
на замовлення 2080 шт:
термін постачання 21-30 дні (днів)
46+9.33 грн
64+6.22 грн
95+4.18 грн
113+3.51 грн
446+2.07 грн
1225+1.95 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
FSB50550US ONSEMI FAIRS46910-1.pdf?t.download=true&u=5oefqw Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Number of channels: 6
Power dissipation: 14.5W
Technology: Motion SPM® 5
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: MOSFET three-phase bridge
Mounting: SMD
Operating temperature: -40...150°C
Case: SPM5H-023
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
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NTMJS1D4N06CLTWG ONSEMI ntmjs1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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FSA4157AP6X ONSEMI fsa4157-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 1µA
Kind of output: SPDT
Kind of package: reel; tape
Technology: TTL
Mounting: SMD
Operating temperature: -40...85°C
Case: SC70-6
Supply voltage: 2.7...5.5V DC
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NLHV4157NDFT2G NLHV4157NDFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63576AF4460D3&compId=NLHV4157N-D.pdf?ci_sign=1fdf53ec6f267b4ba03b7970744a22f99f32ddd8 Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -12÷-4VDC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: SPDT; switch
Mounting: SMD
Operating temperature: -55...125°C
Case: SC88
Number of inputs: 2
Supply voltage: -12...-4V DC
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FDN327N FDN327N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF875E74E87E28&compId=FDN327N.pdf?ci_sign=647dba67650dcc6217d7c8ab71a22b7dc59b804a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Mounting: SMD
Drain current: 2A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 6.3nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: SuperSOT-3
Drain-source voltage: 20V
на замовлення 524 шт:
термін постачання 21-30 дні (днів)
13+34.79 грн
17+23.64 грн
21+19.62 грн
50+13.00 грн
85+10.87 грн
233+10.32 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
FDN5632N-F085 FDN5632N-F085 ONSEMI fdn5632n-f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 1.1W; SuperSOT-3
Mounting: SMD
Drain current: 1.7A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SuperSOT-3
Drain-source voltage: 60V
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)
7+63.64 грн
11+38.61 грн
41+22.61 грн
113+21.35 грн
500+20.49 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MC33071DR2G MC33071DR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
на замовлення 2354 шт:
термін постачання 21-30 дні (днів)
9+47.52 грн
11+39.32 грн
33+28.13 грн
91+26.63 грн
1000+25.77 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FAN7842MX FAN7842MX ONSEMI fan7842-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Operating temperature: -40...125°C
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 140ns
Pulse fall time: 80ns
Number of channels: 2
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 200V
Mounting: SMD
Case: SOP8
Supply voltage: 10...20V DC
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FDN340P FDN340P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BDB12564E13440C4&compId=FDN340P.pdf?ci_sign=837bebb062c1067f868956117920b37c4697bddb Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -10A
Mounting: SMD
Case: SuperSOT-3
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
на замовлення 4640 шт:
термін постачання 21-30 дні (днів)
14+32.24 грн
18+22.06 грн
25+16.86 грн
95+9.69 грн
260+9.22 грн
3000+8.90 грн
Мінімальне замовлення: 14
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MMBZ5242BLT1G MMBZ5242BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; 1uA
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Leakage current: 1µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
на замовлення 423 шт:
термін постачання 21-30 дні (днів)
56+7.66 грн
97+4.10 грн
129+3.06 грн
149+2.65 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
NC7WZ125L8X-L22185 ONSEMI Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+14.26 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TIP30CG TIP30CG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CB51EFCFAE9820&compId=TIP29A-C_TIP30A-C.pdf?ci_sign=d0ea39944a06a9b634764395908636d5e2cab8c9 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
8+55.16 грн
45+20.64 грн
50+20.57 грн
Мінімальне замовлення: 8
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FDMS86550 ONSEMI fdms86550-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
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GBPC3508 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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74LVX541MTC 74LVX541MTC ONSEMI 74LVX541-D.pdf Category: Level translators
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; 2÷3.6VDC
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: tube
Case: TSSOP20
Manufacturer series: LVX
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Mounting: SMD
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NB4L16MMNG NB4L16MMNG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D866AEA5820&compId=NB4L16MMNG.pdf?ci_sign=4a85cbbe4b0b7efbdded3bdada92317e2e59b429 Category: Level translators
Description: IC: digital; buffer,transceiver,translator; Ch: 1; 3.8VDC; SMD
Supply voltage: 3.8V DC
Frequency: 5GHz
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Case: QFN16
Kind of integrated circuit: buffer; transceiver; translator
Operating temperature: -40...85°C
Mounting: SMD
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FDD14AN06LA0-F085 fdd14an06l_f085-d.pdf
FDD14AN06LA0-F085
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 50A
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 32nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 33mΩ
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MC10H124FNG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D0C3EB97820&compId=MC10H124FNG.pdf?ci_sign=bfa6616118030aaf438391c9ae2880e2f3187943
MC10H124FNG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Type of integrated circuit: digital
Number of channels: 4
Kind of package: tube
Manufacturer series: 10H
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Operating temperature: 0...75°C
Case: PLCC20
Number of inputs: 5
Number of outputs: 8
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MC10H124FNR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D0C3EB97820&compId=MC10H124FNG.pdf?ci_sign=bfa6616118030aaf438391c9ae2880e2f3187943
MC10H124FNR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: 10H
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Operating temperature: 0...75°C
Case: PLCC20
Number of inputs: 5
Number of outputs: 8
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MC10H125FNG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D9D75B07820&compId=MC10H125FNG.pdf?ci_sign=a36b44e44a8d84a1c2ea1b391e763d40cf1aae18
MC10H125FNG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Type of integrated circuit: digital
Number of channels: 4
Kind of package: tube
Manufacturer series: 10H
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Operating temperature: 0...75°C
Case: PLCC20
Number of inputs: 8
Number of outputs: 4
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MC10H125FNR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D9D75B07820&compId=MC10H125FNG.pdf?ci_sign=a36b44e44a8d84a1c2ea1b391e763d40cf1aae18
MC10H125FNR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: 10H
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Operating temperature: 0...75°C
Case: PLCC20
Number of inputs: 8
Number of outputs: 4
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CAT25040VI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C70760D5&compId=CAT25010-D.pdf?ci_sign=ce95be0e3f46d9f22d0f4b1eb8accd053c9655cb
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Operating temperature: -40...85°C
Case: SOIC8
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 4kb EEPROM
Mounting: SMD
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DF01M pVersion=0046&contRep=ZT&docId=005056AB752F1EE797B01887CA95C748&compId=DF005-10m.pdf?ci_sign=a2ba58420bf47aec9f9d95208f646afa11972b67
DF01M
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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1N5360BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5360BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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MURS320T3G murs320t3-d.pdf
MURS320T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 818 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+45.82 грн
14+30.26 грн
50+23.87 грн
67+13.87 грн
183+13.08 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MURS480ET3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BCF858BD5560CE&compId=MURS480ET3G.PDF?ci_sign=a1d08ef18151d7efef07c515d5c9e865097430cd
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
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MURS105T3G murs120t3-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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MUR140RLG mur120-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
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FFSB0665A ffsb0665a-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 9A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Load current: 9A
Semiconductor structure: single diode
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FFSB0665B ffsb0665b-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
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FFSB0665B-F085 ffsb0665b-f085-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
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MM3Z33VT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z33VT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 870 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.64 грн
79+5.04 грн
115+3.45 грн
133+2.96 грн
583+1.58 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
SZMM3Z33VT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
SZMM3Z33VT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Manufacturer series: MM3ZxxT1G
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+18.91 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DF005S pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F719CFE3C74469&compId=DF005S.pdf?ci_sign=71de7becbc26bb3965fe3784af153c93ce6e0759
DF005S
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 382 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.77 грн
25+34.28 грн
39+24.12 грн
106+22.80 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
FDMC510P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF4A9FB488FE28&compId=FDMC510P.pdf?ci_sign=d08e6b2b6a6fde3eb522f243000d92dc86bb3da8
FDMC510P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Mounting: SMD
Case: MLP8
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
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FDMC510P-F106 FDMC510P-D.PDF
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -50A; 41W; MLP8
Mounting: SMD
Case: MLP8
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 12mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -50A
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FDME510PZT fdme510pzt-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET
Mounting: SMD
Case: MicroFET
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -15A
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FSQ321LX
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.6A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 19Ω
Power: 10W
Application: SMPS
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SZ1SMB5933BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NTBG060N065SC1 ntbg060n065sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Case: D2PAK-7
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 50mΩ
Power dissipation: 85W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Gate charge: 74nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...18V
Pulsed drain current: 130A
Mounting: SMD
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FCD600N60Z fcd600n60z-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCD600N65S3R0 fcd600n65s3r0-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7660AS fdms7660as-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS0310AS fdms0310as-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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SZ1SMA5925BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 10V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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FQA40N25 fqa40n25-d.pdf
FQA40N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Gate charge: 110nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 160A
Mounting: THT
Case: TO3PN
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+292.75 грн
5+194.62 грн
13+184.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MJD350T4G pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9CDDEC5F654143&compId=MJD340G.pdf?ci_sign=12472b6532ea9144316d04054ab6c4b191e42f7f
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Mounting: SMD
Case: DPAK
Frequency: 10MHz
Collector-emitter voltage: 300V
Current gain: 30...240
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
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NZL6V8AXV3T1G nzl5v6axv3t1-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 4.5V
Kind of package: reel; tape
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NZQA6V8AXV5T1G nzqa5v6axv5-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Mounting: SMD
Case: SOT553
Max. off-state voltage: 4.3V
Kind of package: reel; tape
Peak pulse power dissipation: 20W
Max. forward impulse current: 1.6A
Number of channels: 4
Version: ESD
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FGH50N3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EA4DD31AB4C0CE&compId=FGH50N3.PDF?ci_sign=1b08b89d55287b0337fe8ab3f2231b8c18eadf1b
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 300V; 75A; 463W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 300V
Collector current: 75A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 228nC
Kind of package: tube
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CPH6341-TL-W cph6341-d.pdf
CPH6341-TL-W
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 1.6W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 10nC
Pulsed drain current: -20A
на замовлення 270 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.91 грн
10+40.03 грн
48+19.38 грн
131+18.36 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SZMM3Z3V0T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
SZMM3Z3V0T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.76 грн
29+13.63 грн
50+8.45 грн
100+6.97 грн
227+4.07 грн
623+3.85 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
N24RF64DWPT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A779660D5&compId=N24RF64-D.pdf?ci_sign=ef42442f3e5bcd8f97473c7ccf8fde5521ee39de
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C,RF; 8kx8bit/2kx32bit; 1.8÷5.5V
Mounting: SMD
Operating temperature: -40...105°C
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 64kb EEPROM
Case: SOIC8
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Kind of memory: EEPROM
Memory organisation: 8kx8bit/2kx32bit
Access time: 400ns
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N24RF64EDTPT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A7797A0D5&compId=N24RF64-D.pdf?ci_sign=cf625b6825d72ff851a42235a9d372140a84706f
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C,RF; 8kx8bit/2kx32bit; 1.8÷5.5V
Mounting: SMD
Operating temperature: -40...105°C
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 64kb EEPROM
Case: TSSOP8
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Kind of memory: EEPROM
Memory organisation: 8kx8bit/2kx32bit
Access time: 400ns
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NSVBAT54HT1G bat54ht1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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NCP785AH150T1G ncp785a-d.pdf
NCP785AH150T1G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Operating temperature: -40...85°C
Tolerance: ±5%
Output voltage: 1.5V
Output current: 10mA
Type of integrated circuit: voltage regulator
Input voltage: 25...450V
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MM3Z4V7T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z4V7T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 2741 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.64 грн
79+5.04 грн
115+3.45 грн
134+2.95 грн
710+1.30 грн
1950+1.23 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MM3Z4V7ST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z4V7ST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 8994 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.67 грн
76+5.20 грн
149+2.65 грн
170+2.32 грн
185+2.14 грн
682+1.36 грн
1874+1.28 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MM5Z4V7T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C405FC01D0A0D6&compId=MM5ZxxxT1G.PDF?ci_sign=50a5312bc1eb36c8e1e32b0a5807402ec676aafc
MM5Z4V7T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
на замовлення 2080 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.33 грн
64+6.22 грн
95+4.18 грн
113+3.51 грн
446+2.07 грн
1225+1.95 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
FSB50550US FAIRS46910-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Number of channels: 6
Power dissipation: 14.5W
Technology: Motion SPM® 5
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: MOSFET three-phase bridge
Mounting: SMD
Operating temperature: -40...150°C
Case: SPM5H-023
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
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NTMJS1D4N06CLTWG ntmjs1d4n06cl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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FSA4157AP6X fsa4157-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 1µA
Kind of output: SPDT
Kind of package: reel; tape
Technology: TTL
Mounting: SMD
Operating temperature: -40...85°C
Case: SC70-6
Supply voltage: 2.7...5.5V DC
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NLHV4157NDFT2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63576AF4460D3&compId=NLHV4157N-D.pdf?ci_sign=1fdf53ec6f267b4ba03b7970744a22f99f32ddd8
NLHV4157NDFT2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -12÷-4VDC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: SPDT; switch
Mounting: SMD
Operating temperature: -55...125°C
Case: SC88
Number of inputs: 2
Supply voltage: -12...-4V DC
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FDN327N pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF875E74E87E28&compId=FDN327N.pdf?ci_sign=647dba67650dcc6217d7c8ab71a22b7dc59b804a
FDN327N
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Mounting: SMD
Drain current: 2A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 6.3nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: SuperSOT-3
Drain-source voltage: 20V
на замовлення 524 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.79 грн
17+23.64 грн
21+19.62 грн
50+13.00 грн
85+10.87 грн
233+10.32 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
FDN5632N-F085 fdn5632n-f085-d.pdf
FDN5632N-F085
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 1.1W; SuperSOT-3
Mounting: SMD
Drain current: 1.7A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SuperSOT-3
Drain-source voltage: 60V
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.64 грн
11+38.61 грн
41+22.61 грн
113+21.35 грн
500+20.49 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MC33071DR2G mc34071-d.pdf
MC33071DR2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
на замовлення 2354 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.52 грн
11+39.32 грн
33+28.13 грн
91+26.63 грн
1000+25.77 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FAN7842MX fan7842-d.pdf
FAN7842MX
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Operating temperature: -40...125°C
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 140ns
Pulse fall time: 80ns
Number of channels: 2
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 200V
Mounting: SMD
Case: SOP8
Supply voltage: 10...20V DC
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FDN340P pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BDB12564E13440C4&compId=FDN340P.pdf?ci_sign=837bebb062c1067f868956117920b37c4697bddb
FDN340P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -10A
Mounting: SMD
Case: SuperSOT-3
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
на замовлення 4640 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+32.24 грн
18+22.06 грн
25+16.86 грн
95+9.69 грн
260+9.22 грн
3000+8.90 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MMBZ5242BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5242BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; 1uA
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Leakage current: 1µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
на замовлення 423 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.66 грн
97+4.10 грн
129+3.06 грн
149+2.65 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
NC7WZ125L8X-L22185
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+14.26 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TIP30CG pVersion=0046&contRep=ZT&docId=005056AB82531ED999CB51EFCFAE9820&compId=TIP29A-C_TIP30A-C.pdf?ci_sign=d0ea39944a06a9b634764395908636d5e2cab8c9
TIP30CG
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+55.16 грн
45+20.64 грн
50+20.57 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FDMS86550 fdms86550-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
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GBPC3508 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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74LVX541MTC 74LVX541-D.pdf
74LVX541MTC
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; 2÷3.6VDC
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: tube
Case: TSSOP20
Manufacturer series: LVX
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Mounting: SMD
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NB4L16MMNG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D866AEA5820&compId=NB4L16MMNG.pdf?ci_sign=4a85cbbe4b0b7efbdded3bdada92317e2e59b429
NB4L16MMNG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; buffer,transceiver,translator; Ch: 1; 3.8VDC; SMD
Supply voltage: 3.8V DC
Frequency: 5GHz
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Case: QFN16
Kind of integrated circuit: buffer; transceiver; translator
Operating temperature: -40...85°C
Mounting: SMD
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