Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMUN2113LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMUN2130LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Current gain: 3...5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMUN2140LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...250 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC74VHCT373ADTRG | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...85°C Case: TSSOP20 Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: 3-state Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Kind of integrated circuit: 3-state; D latch; octal Family: VHCT Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MC74VHCT373ADWRG | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO20WB Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: 3-state Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Kind of integrated circuit: 3-state; D latch; octal Family: VHCT Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX79C2V7 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 75µA Manufacturer series: BZX79C |
на замовлення 2420 шт: термін постачання 21-30 дні (днів) |
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NCV7343D20R2G | ONSEMI |
![]() Description: IC: interface Type of integrated circuit: interface |
на замовлення 18000 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT132ADR2G | ONSEMI |
![]() Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT Type of integrated circuit: digital Number of channels: 4 Kind of package: reel; tape Kind of input: with Schmitt trigger Manufacturer series: VHCT Kind of gate: NAND Technology: CMOS; TTL Kind of integrated circuit: Schmitt trigger Family: VHCT Mounting: SMD Operating temperature: -40...85°C Case: SOIC14 Number of inputs: 2 Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBRS130LT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.395V |
на замовлення 4664 шт: термін постачання 21-30 дні (днів) |
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FSA2259UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2 Type of integrated circuit: analog switch Number of channels: 2 Case: UMLP10 Supply voltage: 1.65...4.4V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: SPDT x2 Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDS6680A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1630 шт: термін постачання 21-30 дні (днів) |
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74VHC14M | ONSEMI |
![]() ![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Manufacturer series: VHC Quiescent current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MURB1620CTT4G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 0.895V Max. load current: 16A Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 634 шт: термін постачання 21-30 дні (днів) |
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MURB1620CTRT4G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 16A Semiconductor structure: common anode; double Case: D2PAK Kind of package: reel; tape Reverse recovery time: 85ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MURF1620CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 16A; tube; TO220FP Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 16A Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SS14 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Power dissipation: 1.1W |
на замовлення 3650 шт: термін постачання 21-30 дні (днів) |
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NRVHP820LFST1G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 8A; 35ns; LFPAK56; Ufmax: 1V; Ifsm: 175A Mounting: SMD Max. off-state voltage: 200V Max. load current: 16A Max. forward voltage: 1V Load current: 8A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 175A Application: automotive industry Kind of package: reel; tape Type of diode: rectifying Case: LFPAK56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NTD360N80S3Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Case: DPAK Drain-source voltage: 800V Drain current: 8.2A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 32.5A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDS4480 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 10.8A Pulsed drain current: 45A Power dissipation: 2.5W Case: SO8 On-state resistance: 21mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2385 шт: термін постачання 21-30 дні (днів) |
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FDG6304P | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W Case: SC70-6; SC88; SOT363 Drain-source voltage: -25V Drain current: -0.41A On-state resistance: 1.9Ω Type of transistor: P-MOSFET x2 Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.5nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC10H350FNG | ONSEMI |
![]() Description: IC: digital; Ch: 4; SMD; PLCC20; 0÷75°C; tube; IN: 8; OUT: 4; 10H Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 4 Mounting: SMD Case: PLCC20 Operating temperature: 0...75°C Kind of package: tube Number of inputs: 8 Number of outputs: 4 Manufacturer series: 10H |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NCP81234MNTXG | ONSEMI |
![]() Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck Type of integrated circuit: PMIC Input voltage: 4.5...20V Output voltage: 5.2...5.5V Frequency: 180...1320kHz Mounting: SMD Case: QFN28 Topology: buck Number of channels: 2 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NC7WZ17P6X-L22347 | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: SC70-6 Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Part status: Not recommended for new designs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NC7WZ17L6X | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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MM3Z12VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 12V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 469 шт: термін постачання 21-30 дні (днів) |
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MM3Z16VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
на замовлення 1871 шт: термін постачання 21-30 дні (днів) |
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MM3Z24VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 24V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 5669 шт: термін постачання 21-30 дні (днів) |
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MM3Z27VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 27V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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MM3Z30VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 30V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 5809 шт: термін постачання 21-30 дні (днів) |
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MM3Z15VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 15V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 1224 шт: термін постачання 21-30 дні (днів) |
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MM3Z13VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 12V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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SZMM3Z12VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.3W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 12V Application: automotive industry Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 820 шт: термін постачання 21-30 дні (днів) |
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MM3Z33VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 33V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MM3Z10VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 10V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MM3Z18VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 18V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FDMC86184 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33 Case: Power33 Drain-source voltage: 100V Drain current: 36A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 54W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 266A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NUP5120X6T1G | ONSEMI |
![]() Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SOT563; Ch: 5 Max. off-state voltage: 5V Semiconductor structure: unidirectional Breakdown voltage: 6.2...7.2V Number of channels: 5 Kind of package: reel; tape Type of diode: TVS array Mounting: SMD Case: SOT563 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NUP5120X6T2G | ONSEMI |
![]() Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SOT563; Ch: 5 Max. off-state voltage: 5V Semiconductor structure: unidirectional Breakdown voltage: 6.2...7.2V Number of channels: 5 Kind of package: reel; tape Type of diode: TVS array Mounting: SMD Case: SOT563 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74ACT00MTCX | ONSEMI |
![]() ![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC74ACT00DR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Technology: TTL Mounting: SMD Case: SOIC14 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: ACT Manufacturer series: ACT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74ACT00DTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDV303N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.68A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 6725 шт: термін постачання 21-30 дні (днів) |
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FDMS0312AS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56 Mounting: SMD Drain-source voltage: 30V Drain current: 22A On-state resistance: 6.8mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 31nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Case: Power56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBRS130T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.6V |
на замовлення 2183 шт: термін постачання 21-30 дні (днів) |
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FDS8884 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 8.5A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 13nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 269 шт: термін постачання 21-30 дні (днів) |
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US1GFA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NRVUS1GFA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Max. forward impulse current: 30A Application: automotive industry Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBT489LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.31/0.71W Case: SOT23; TO236AB Current gain: 300...900 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SMMBT5089LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 50mA Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 400...1200 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LL4148 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: SOD80 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.5W Max. load current: 0.5A |
на замовлення 10896 шт: термін постачання 21-30 дні (днів) |
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SMS05CT1G | ONSEMI |
![]() Description: Diode: TVS array; 6.2÷7.2V; 24A; 350W; common anode; TSOP6; Ch: 5 Max. off-state voltage: 5V Semiconductor structure: common anode Max. forward impulse current: 24A Breakdown voltage: 6.2...7.2V Number of channels: 5 Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.35kW Mounting: SMD Case: TSOP6 |
на замовлення 806 шт: термін постачання 21-30 дні (днів) |
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MB10S | ONSEMI |
![]() ![]() ![]() Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDS6612A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 37mΩ Drain current: 8.4A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Drain-source voltage: 30V Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD239CTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 30W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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6N139SM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 400-2000%@0.5mA Case: Gull wing 8 Slew rate: 10kV/μs Manufacturer series: 6N139M |
на замовлення 950 шт: термін постачання 21-30 дні (днів) |
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MMBD7000LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; SOT23; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: switching Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: double series |
на замовлення 5865 шт: термін постачання 21-30 дні (днів) |
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SMMBD7000LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 1.6A Case: SOT23 Mounting: SMD Application: automotive industry Kind of package: reel; tape Type of diode: switching Max. off-state voltage: 100V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: double series Reverse recovery time: 4ns Max. forward impulse current: 1.6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74ACT244SCX | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA Manufacturer series: ACT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74ACT244DTR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74ACT244DWG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: ACT |
товару немає в наявності |
В кошику од. на суму грн. |
MMUN2113LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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MMUN2130LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
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MMUN2140LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
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MC74VHCT373ADTRG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; D latch; octal
Family: VHCT
Mounting: SMD
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; D latch; octal
Family: VHCT
Mounting: SMD
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MC74VHCT373ADWRG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; D latch; octal
Family: VHCT
Mounting: SMD
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; D latch; octal
Family: VHCT
Mounting: SMD
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BZX79C2V7 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 75µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 75µA
Manufacturer series: BZX79C
на замовлення 2420 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.90 грн |
58+ | 6.67 грн |
71+ | 5.44 грн |
118+ | 3.26 грн |
250+ | 2.44 грн |
477+ | 1.89 грн |
1000+ | 1.72 грн |
NCV7343D20R2G |
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Виробник: ONSEMI
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 48.77 грн |
MC74VHCT132ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: VHCT
Kind of gate: NAND
Technology: CMOS; TTL
Kind of integrated circuit: Schmitt trigger
Family: VHCT
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: VHCT
Kind of gate: NAND
Technology: CMOS; TTL
Kind of integrated circuit: Schmitt trigger
Family: VHCT
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
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MBRS130LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.395V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.395V
на замовлення 4664 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.93 грн |
26+ | 14.79 грн |
50+ | 10.96 грн |
100+ | 9.66 грн |
126+ | 7.13 грн |
346+ | 6.74 грн |
1000+ | 6.51 грн |
FSA2259UMX |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2
Type of integrated circuit: analog switch
Number of channels: 2
Case: UMLP10
Supply voltage: 1.65...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: SPDT x2
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2
Type of integrated circuit: analog switch
Number of channels: 2
Case: UMLP10
Supply voltage: 1.65...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: SPDT x2
Technology: CMOS; TTL
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FDS6680A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1630 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.90 грн |
10+ | 49.66 грн |
27+ | 33.72 грн |
74+ | 31.88 грн |
500+ | 30.65 грн |
74VHC14M | ![]() |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Manufacturer series: VHC
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Manufacturer series: VHC
Quiescent current: 20µA
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MURB1620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 634 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 126.27 грн |
10+ | 83.53 грн |
15+ | 63.61 грн |
40+ | 59.77 грн |
500+ | 57.48 грн |
MURB1620CTRT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common anode; double
Case: D2PAK
Kind of package: reel; tape
Reverse recovery time: 85ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common anode; double
Case: D2PAK
Kind of package: reel; tape
Reverse recovery time: 85ns
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MURF1620CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; TO220FP
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; TO220FP
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
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SS14 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 3650 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.03 грн |
43+ | 9.12 грн |
100+ | 6.59 грн |
178+ | 5.06 грн |
491+ | 4.75 грн |
NRVHP820LFST1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; LFPAK56; Ufmax: 1V; Ifsm: 175A
Mounting: SMD
Max. off-state voltage: 200V
Max. load current: 16A
Max. forward voltage: 1V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 175A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Case: LFPAK56
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; LFPAK56; Ufmax: 1V; Ifsm: 175A
Mounting: SMD
Max. off-state voltage: 200V
Max. load current: 16A
Max. forward voltage: 1V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 175A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Case: LFPAK56
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NTD360N80S3Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Case: DPAK
Drain-source voltage: 800V
Drain current: 8.2A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 32.5A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Case: DPAK
Drain-source voltage: 800V
Drain current: 8.2A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 32.5A
Mounting: SMD
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FDS4480 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.8A
Pulsed drain current: 45A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.8A
Pulsed drain current: 45A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2385 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.97 грн |
7+ | 58.24 грн |
21+ | 44.52 грн |
56+ | 42.15 грн |
500+ | 41.54 грн |
FDG6304P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W
Case: SC70-6; SC88; SOT363
Drain-source voltage: -25V
Drain current: -0.41A
On-state resistance: 1.9Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W
Case: SC70-6; SC88; SOT363
Drain-source voltage: -25V
Drain current: -0.41A
On-state resistance: 1.9Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
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MC10H350FNG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; SMD; PLCC20; 0÷75°C; tube; IN: 8; OUT: 4; 10H
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 4
Mounting: SMD
Case: PLCC20
Operating temperature: 0...75°C
Kind of package: tube
Number of inputs: 8
Number of outputs: 4
Manufacturer series: 10H
Category: Level translators
Description: IC: digital; Ch: 4; SMD; PLCC20; 0÷75°C; tube; IN: 8; OUT: 4; 10H
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 4
Mounting: SMD
Case: PLCC20
Operating temperature: 0...75°C
Kind of package: tube
Number of inputs: 8
Number of outputs: 4
Manufacturer series: 10H
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NCP81234MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...20V
Output voltage: 5.2...5.5V
Frequency: 180...1320kHz
Mounting: SMD
Case: QFN28
Topology: buck
Number of channels: 2
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...20V
Output voltage: 5.2...5.5V
Frequency: 180...1320kHz
Mounting: SMD
Case: QFN28
Topology: buck
Number of channels: 2
Operating temperature: -40...125°C
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NC7WZ17P6X-L22347 |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Part status: Not recommended for new designs
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Part status: Not recommended for new designs
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NC7WZ17L6X |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 6.93 грн |
MM3Z12VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 469 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.10 грн |
95+ | 4.06 грн |
121+ | 3.19 грн |
149+ | 2.57 грн |
182+ | 2.11 грн |
MM3Z16VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 1871 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.08 грн |
71+ | 5.44 грн |
141+ | 2.74 грн |
677+ | 1.33 грн |
1860+ | 1.26 грн |
MM3Z24VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 24V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 24V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 5669 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 7.72 грн |
74+ | 5.21 грн |
93+ | 4.14 грн |
145+ | 2.64 грн |
500+ | 1.66 грн |
751+ | 1.20 грн |
2064+ | 1.13 грн |
MM3Z27VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 27V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 27V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.25 грн |
76+ | 5.06 грн |
98+ | 3.92 грн |
141+ | 2.73 грн |
500+ | 1.85 грн |
651+ | 1.38 грн |
1789+ | 1.30 грн |
MM3Z30VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 30V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 30V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 5809 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.55 грн |
53+ | 7.28 грн |
100+ | 3.95 грн |
386+ | 2.32 грн |
1000+ | 2.30 грн |
1061+ | 2.20 грн |
3000+ | 2.16 грн |
MM3Z15VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 15V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 15V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 1224 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.45 грн |
93+ | 4.14 грн |
138+ | 2.79 грн |
162+ | 2.37 грн |
500+ | 1.66 грн |
672+ | 1.33 грн |
MM3Z13VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.86 грн |
39+ | 9.89 грн |
51+ | 7.63 грн |
100+ | 4.95 грн |
325+ | 2.76 грн |
894+ | 2.61 грн |
SZMM3Z12VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.3W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Application: automotive industry
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.3W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Application: automotive industry
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 820 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.81 грн |
33+ | 11.88 грн |
50+ | 8.20 грн |
100+ | 7.05 грн |
152+ | 5.90 грн |
416+ | 5.59 грн |
MM3Z33VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 33V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 33V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
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MM3Z10VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 10V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 10V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
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MM3Z18VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 18V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 18V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
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FDMC86184 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Case: Power33
Drain-source voltage: 100V
Drain current: 36A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 266A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Case: Power33
Drain-source voltage: 100V
Drain current: 36A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 266A
Mounting: SMD
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NUP5120X6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SOT563; Ch: 5
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Breakdown voltage: 6.2...7.2V
Number of channels: 5
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SOT563; Ch: 5
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Breakdown voltage: 6.2...7.2V
Number of channels: 5
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
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NUP5120X6T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SOT563; Ch: 5
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Breakdown voltage: 6.2...7.2V
Number of channels: 5
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SOT563; Ch: 5
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Breakdown voltage: 6.2...7.2V
Number of channels: 5
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
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74ACT00MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MC74ACT00DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
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MC74ACT00DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
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FDV303N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 6725 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.81 грн |
33+ | 11.65 грн |
50+ | 8.06 грн |
100+ | 6.97 грн |
242+ | 3.75 грн |
664+ | 3.54 грн |
FDMS0312AS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 6.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 6.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
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MBRS130T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.6V
на замовлення 2183 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.36 грн |
20+ | 19.77 грн |
50+ | 15.71 грн |
96+ | 9.43 грн |
263+ | 8.89 грн |
1000+ | 8.51 грн |
FDS8884 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 8.5A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 13nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 8.5A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 13nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 269 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.69 грн |
14+ | 29.20 грн |
50+ | 18.16 грн |
136+ | 17.24 грн |
US1GFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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NRVUS1GFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 30A
Application: automotive industry
Max. forward voltage: 1.3V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 30A
Application: automotive industry
Max. forward voltage: 1.3V
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MMBT489LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SMMBT5089LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 400...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 400...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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LL4148 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.5A
на замовлення 10896 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.43 грн |
81+ | 4.75 грн |
93+ | 4.14 грн |
149+ | 2.57 грн |
500+ | 1.82 грн |
953+ | 0.95 грн |
2616+ | 0.90 грн |
SMS05CT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; 24A; 350W; common anode; TSOP6; Ch: 5
Max. off-state voltage: 5V
Semiconductor structure: common anode
Max. forward impulse current: 24A
Breakdown voltage: 6.2...7.2V
Number of channels: 5
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: TSOP6
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; 24A; 350W; common anode; TSOP6; Ch: 5
Max. off-state voltage: 5V
Semiconductor structure: common anode
Max. forward impulse current: 24A
Breakdown voltage: 6.2...7.2V
Number of channels: 5
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: TSOP6
на замовлення 806 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.11 грн |
27+ | 14.56 грн |
50+ | 12.18 грн |
85+ | 10.58 грн |
234+ | 9.96 грн |
500+ | 9.58 грн |
MB10S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
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FDS6612A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Drain current: 8.4A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Drain-source voltage: 30V
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Drain current: 8.4A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Drain-source voltage: 30V
Kind of channel: enhancement
Gate-source voltage: ±20V
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BD239CTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
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6N139SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 400-2000%@0.5mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 400-2000%@0.5mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
на замовлення 950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 124.62 грн |
10+ | 76.63 грн |
18+ | 52.88 грн |
47+ | 49.81 грн |
250+ | 48.28 грн |
MMBD7000LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: double series
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: double series
на замовлення 5865 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.43 грн |
95+ | 4.06 грн |
117+ | 3.30 грн |
129+ | 2.98 грн |
500+ | 2.32 грн |
669+ | 1.35 грн |
1839+ | 1.27 грн |
SMMBD7000LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 1.6A
Case: SOT23
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 100V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 4ns
Max. forward impulse current: 1.6A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 1.6A
Case: SOT23
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 100V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 4ns
Max. forward impulse current: 1.6A
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74ACT244SCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: ACT
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MC74ACT244DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: ACT
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MC74ACT244DWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: ACT
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