| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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NTHD4401PT3G | onsemi |
 Description: MOSFET 2P-CH 20V 2.1A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTHD4502NT1G | onsemi |
Description: MOSFET 2N-CH 30V 2.2A CHIPFET Supplier Device Package: ChipFET™ Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Current - Continuous Drain (Id) @ 25°C: 2.2A Drain to Source Voltage (Vdss): 30V Power - Max: 640mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTHD4508NT1G | onsemi |
Description: MOSFET 2N-CH 20V 3A CHIPFET Part Status: Active Supplier Device Package: ChipFET™ Vgs(th) (Max) @ Id: 1.2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3A Drain to Source Voltage (Vdss): 20V Power - Max: 1.13W Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTJD4152PT1G | onsemi |
Description: MOSFET 2P-CH 20V 0.88A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 |
на замовлення 59839 шт: термін постачання 21-31 дні (днів) |
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NTJS3151PT1G | onsemi |
Description: MOSFET P-CH 12V 2.7A SC88/SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.2V @ 100µA Power Dissipation (Max): 625mW (Ta) |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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NTJS4151PT1 | onsemi |
Description: MOSFET P-CH 20V 3.3A SOT-363 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTJS4405NT1G | onsemi |
Description: MOSFET N-CH 25V 1A SC88/SC70-6 Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTQD4154ZR2 | onsemi |
Description: MOSFET 2N-CH 20V 7.5A 8-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTR2101PT1G | onsemi |
Description: MOSFET P-CH 8V SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 4 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 10007 шт: термін постачання 21-31 дні (днів) |
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NTR4101PT1G | onsemi |
Description: MOSFET P-CH 20V 1.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V |
на замовлення 42980 шт: термін постачання 21-31 дні (днів) |
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NTR4501NT1G | onsemi |
Description: MOSFET N-CH 20V 3.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
на замовлення 49492 шт: термін постачання 21-31 дні (днів) |
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NTR4503NT1G | onsemi |
Description: MOSFET N-CH 30V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V |
на замовлення 20900 шт: термін постачання 21-31 дні (днів) |
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NTS2101PT1G | onsemi |
Description: MOSFET P-CH 8V 1.4A SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-3 (SOT323) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 8 V |
на замовлення 45895 шт: термін постачання 21-31 дні (днів) |
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NTZD3152PT1G | onsemi |
Description: MOSFET 2P-CH 20V 0.43A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 1461 шт: термін постачання 21-31 дні (днів) |
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NTZD3154NT1G | onsemi |
Description: MOSFET 2N-CH 20V 0.54A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTZD3155CT1G | onsemi |
Description: MOSFET N/P-CH 20V 0.54A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTZS3151PT1G | onsemi |
Description: MOSFET P-CH 20V 860MA SOT563 Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 170mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 17645 шт: термін постачання 21-31 дні (днів) |
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MAC212A10 | onsemi |
Description: TRIAC 800V 12A TO220AB Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 12 A Part Status: Obsolete Supplier Device Package: TO-220AB Voltage - Gate Trigger (Vgt) (Max): 2 V Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Current - Gate Trigger (Igt) (Max): 50 mA Current - Hold (Ih) (Max): 50 mA Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Single Triac Type: Standard Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1SMA33AT3 | onsemi |
Description: TVS DIODE 33VWM 53.3VC SMA Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 53.3V Voltage - Breakdown (Min): 36.7V Unidirectional Channels: 1 Supplier Device Package: SMA Voltage - Reverse Standoff (Typ): 33V Current - Peak Pulse (10/1000µs): 7.5A Capacitance @ Frequency: 375pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1SS383T1G | onsemi |
Description: DIODE ARR SCHOTT 40V 300MA SC-82 Packaging: Tape & Reel (TR) Package / Case: SC-82 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 300mA (DC) Supplier Device Package: SC-82 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MAC4DSMT4 | onsemi |
Description: TRIAC SENS GATE 600V 4A DPAK Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 4 A Supplier Device Package: DPAK Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - Non Rep. Surge 50, 60Hz (Itsm): 40A @ 60Hz Current - Gate Trigger (Igt) (Max): 10 mA Current - Hold (Ih) (Max): 15 mA Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Single Triac Type: Logic - Sensitive Gate Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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MBRB4030T4 | onsemi |
Description: DIODE SCHOTTKY 30V 40A D2PAK Current - Reverse Leakage @ Vr: 350 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io): 40A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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MM3Z18VST1 | onsemi |
Description: DIODE ZENER 18V 200MW SOD323 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: SOD-323 Part Status: Obsolete Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V |
товару немає в наявності |
Мінімальне замовлення: 27000 шт В кошику од. на суму грн. | ||||||||||||
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MRS1504T3 | onsemi |
Description: DIODE GEN PURP 400V 1.5A SMB Supplier Device Package: SMB Current - Average Rectified (Io): 1.5A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MURB1660CTT4 | onsemi |
Description: DIODE ARRAY GP 600V 8A D2PAK Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 60 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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MURHB860CTT4 | onsemi |
Description: DIODE ARRAY GP 600V 4A D2PAK Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 4A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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NSBA114TDXV6T1 | onsemi |
Description: TRANS 2PNP PREBIAS 0.5W SOT563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NSBC123JDXV6T1 | onsemi |
Description: TRANS 2NPN PREBIAS 0.5W SOT563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Supplier Device Package: SOT-563 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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NSBC123JPDXV6T1 | onsemi |
Description: TRANS PREBIAS NPN/PNP SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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SMF5.0AT1 | onsemi |
Description: TVS DIODE 5VWM 9.2VC SOD123FL Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 21.7A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MAC15SM | onsemi |
Description: TRIAC SENS GATE 600V 15A TO220 Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 15 A Part Status: Obsolete Supplier Device Package: TO-220 Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Current - Gate Trigger (Igt) (Max): 5 mA Current - Hold (Ih) (Max): 10 mA Operating Temperature: -40°C ~ 110°C (TJ) Configuration: Single Triac Type: Logic - Sensitive Gate Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCR8SM | onsemi |
Description: SCR 600V 8A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MSR860 | onsemi |
Description: DIODE STANDARD 600V 8A TO2202 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||
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MAC16CN | onsemi |
Description: TRIAC 800V 16A TO220 Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 16 A Part Status: Obsolete Supplier Device Package: TO-220 Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Non Rep. Surge 50, 60Hz (Itsm): 150A @ 60Hz Current - Gate Trigger (Igt) (Max): 35 mA Current - Hold (Ih) (Max): 50 mA Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Single Triac Type: Standard Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||
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MAC4DCN-001 | onsemi |
Description: TRIAC 800V 4A IPAK Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 4 A Supplier Device Package: IPAK Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - Non Rep. Surge 50, 60Hz (Itsm): 40A @ 60Hz Current - Gate Trigger (Igt) (Max): 35 mA Current - Hold (Ih) (Max): 35 mA Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Single Triac Type: Standard Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MAC8SM | onsemi |
Description: TRIAC SENS GATE 600V 8A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR2515L | onsemi |
Description: DIODE SCHOTTKY 15V 25A TO220-2 Current - Reverse Leakage @ Vr: 15 mA @ 15 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A Voltage - DC Reverse (Vr) (Max): 15 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 25A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCR12LD | onsemi |
Description: SCR 400V 12A TO220AB Package / Case: TO-220-3 Packaging: Tube Voltage - Off State: 400 V Current - On State (It (RMS)) (Max): 12 A Supplier Device Package: TO-220 Current - Off State (Max): 10 µA Voltage - On State (Vtm) (Max): 2.2 V Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - On State (It (AV)) (Max): 7.6 A Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Current - Gate Trigger (Igt) (Max): 8 mA Current - Hold (Ih) (Max): 20 mA Operating Temperature: -40°C ~ 125°C SCR Type: Standard Recovery Mounting Type: Through Hole |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MSR1560 | onsemi |
Description: DIODE STANDARD 600V 15A TO2202 Current - Reverse Leakage @ Vr: 15 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 15A Technology: Standard Reverse Recovery Time (trr): 45 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||
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1SMA33AT3 | onsemi |
Description: TVS DIODE 33VWM 53.3VC SMA Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 53.3V Voltage - Breakdown (Min): 36.7V Unidirectional Channels: 1 Supplier Device Package: SMA Voltage - Reverse Standoff (Typ): 33V Current - Peak Pulse (10/1000µs): 7.5A Capacitance @ Frequency: 375pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCR12DSMT4 | onsemi |
Description: THYRISTOR SCR 12A 600V DPAK Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 12 A Supplier Device Package: DPAK Voltage - Gate Trigger (Vgt) (Max): 1 V Current - On State (It (AV)) (Max): 7.6 A Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Current - Gate Trigger (Igt) (Max): 200 µA Current - Hold (Ih) (Max): 6 mA SCR Type: Sensitive Gate Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCR716T4 | onsemi |
Description: THYRISTOR SCR 4A 400V DPAK Voltage - Off State: 400 V Current - On State (It (RMS)) (Max): 4 A Supplier Device Package: DPAK Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - On State (It (AV)) (Max): 2.6 A Current - Non Rep. Surge 50, 60Hz (Itsm): 25A @ 60Hz Current - Gate Trigger (Igt) (Max): 75 µA Current - Hold (Ih) (Max): 5 mA SCR Type: Sensitive Gate Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MRS1504T3 | onsemi |
Description: DIODE GEN PURP 400V 1.5A SMB Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMB Current - Average Rectified (Io): 1.5A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MURHB860CTT4 | onsemi |
Description: DIODE ARRAY GP 600V 4A D2PAK Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 4A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NSBA114TDXV6T1 | onsemi |
Description: TRANS 2PNP PREBIAS 0.5W SOT563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NSBC123JPDXV6T1 | onsemi |
Description: TRANS PREBIAS NPN/PNP SOT563 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NSBC144EPDXV6T1 | onsemi |
Description: TRANS BR NPN/PNP DUAL 50V SOT563 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB520S30T1 | onsemi |
Description: DIODE SCHOTTKY 200MA 30V SOD523 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84C3V3ET1 | onsemi |
Description: DIODE ZENER 3.3V 225MW SOT23-3 Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 225 mW Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Impedance (Max) (Zzt): 95 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±6% Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMC2DXV5T1 | onsemi |
Description: TRANS PREBIAS NPN/PNP SOT553 Part Status: Obsolete Supplier Device Package: SOT-553 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NSBC124EPDXV6T1 | onsemi |
Description: TRANS PREBIAS NPN/PNP SOT563 Supplier Device Package: SOT-563 Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NZL5V6AXV3T1 | onsemi |
Description: TVS DIODE 3VWM 7VC SC89-3 Power Line Protection: No Power - Peak Pulse: 50W Voltage - Clamping (Max) @ Ipp: 7V Voltage - Breakdown (Min): 5.32V Unidirectional Channels: 2 Supplier Device Package: SC-89-3 Voltage - Reverse Standoff (Typ): 3V Current - Peak Pulse (10/1000µs): 10.1A (8/20µs) Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTJD1155LT1G | onsemi |
Description: MOSFET N/P-CH 8V 1.3A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 |
на замовлення 53250 шт: термін постачання 21-31 дні (днів) |
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NTS4101PT1G | onsemi |
Description: MOSFET P-CH 20V 1.37A SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V Power Dissipation (Max): 329mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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NTJD1155LT1G | onsemi |
Description: MOSFET N/P-CH 8V 1.3A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 |
на замовлення 53758 шт: термін постачання 21-31 дні (днів) |
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NTS4101PT1G | onsemi |
Description: MOSFET P-CH 20V 1.37A SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V Power Dissipation (Max): 329mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V |
на замовлення 2073 шт: термін постачання 21-31 дні (днів) |
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MC74VHC4052DR2 | onsemi |
Description: IC SWITCH SP4T X 2 100OHM 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 95MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Crosstalk: -60dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 80pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NLAS4684MNR2 | onsemi |
Description: IC SWITCH SPDT X 2 800MOHM 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 800mOhm -3db Bandwidth: 9.5MHz Supplier Device Package: 10-DFN (3x3) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 15pC Crosstalk: -83dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 60mOhm Switch Time (Ton, Toff) (Max): 30ns, 30ns Channel Capacitance (CS(off), CD(off)): 102pF, 104pF Current - Leakage (IS(off)) (Max): 1µA Number of Circuits: 2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BAT54XV2T1 | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR120ESFT1 | onsemi |
Description: DIODE SCHOTTKY 20V 1A SOD123FL Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. |
| NTHD4401PT3G |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| NTHD4502NT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 2.2A CHIPFET
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 640mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V
Description: MOSFET 2N-CH 30V 2.2A CHIPFET
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 640mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V
товару немає в наявності
В кошику
од. на суму грн.
| NTHD4508NT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 20V 3A CHIPFET
Part Status: Active
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.13W
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET 2N-CH 20V 3A CHIPFET
Part Status: Active
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.13W
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| NTJD4152PT1G |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.88A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: MOSFET 2P-CH 20V 0.88A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
на замовлення 59839 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.02 грн |
| 18+ | 17.42 грн |
| 100+ | 10.96 грн |
| 500+ | 7.66 грн |
| 1000+ | 6.81 грн |
| NTJS3151PT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 12V 2.7A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 625mW (Ta)
Description: MOSFET P-CH 12V 2.7A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 625mW (Ta)
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.03 грн |
| 10+ | 31.28 грн |
| NTJS4151PT1 |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 3.3A SOT-363
Part Status: Obsolete
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.3A SOT-363
Part Status: Obsolete
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NTJS4405NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 1A SC88/SC70-6
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 630mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Active
Description: MOSFET N-CH 25V 1A SC88/SC70-6
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 630mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| NTQD4154ZR2 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 7.5A 8-TSSOP
Description: MOSFET 2N-CH 20V 7.5A 8-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| NTR2101PT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 8V SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 8V SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 10007 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.95 грн |
| 14+ | 21.94 грн |
| 100+ | 13.96 грн |
| 500+ | 9.85 грн |
| 1000+ | 8.80 грн |
| NTR4101PT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 1.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
Description: MOSFET P-CH 20V 1.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
на замовлення 42980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.02 грн |
| 17+ | 18.16 грн |
| 100+ | 11.44 грн |
| 500+ | 8.01 грн |
| 1000+ | 7.12 грн |
| NTR4501NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
на замовлення 49492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.79 грн |
| 16+ | 18.53 грн |
| 100+ | 11.68 грн |
| 500+ | 8.18 грн |
| 1000+ | 7.28 грн |
| NTR4503NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V
Description: MOSFET N-CH 30V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V
на замовлення 20900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.18 грн |
| 14+ | 21.50 грн |
| 100+ | 13.71 грн |
| 500+ | 9.69 грн |
| 1000+ | 8.67 грн |
| NTS2101PT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 8V 1.4A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 8 V
Description: MOSFET P-CH 8V 1.4A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 8 V
на замовлення 45895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.72 грн |
| 14+ | 22.46 грн |
| 100+ | 14.28 грн |
| 500+ | 10.08 грн |
| 1000+ | 9.01 грн |
| NTZD3152PT1G |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.43A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2P-CH 20V 0.43A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 1461 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.40 грн |
| 20+ | 15.27 грн |
| 100+ | 9.57 грн |
| 500+ | 6.66 грн |
| 1000+ | 5.91 грн |
| NTZD3154NT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| NTZD3155CT1G |
|
Виробник: onsemi
Description: MOSFET N/P-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| NTZS3151PT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 860MA SOT563
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 170mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 860MA SOT563
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 170mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 17645 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.40 грн |
| 16+ | 19.20 грн |
| 100+ | 11.53 грн |
| 500+ | 10.02 грн |
| 1000+ | 6.82 грн |
| 2000+ | 6.27 грн |
| MAC212A10 |
|
Виробник: onsemi
Description: TRIAC 800V 12A TO220AB
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Obsolete
Supplier Device Package: TO-220AB
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: TRIAC 800V 12A TO220AB
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Obsolete
Supplier Device Package: TO-220AB
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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| 1SMA33AT3 |
|
Виробник: onsemi
Description: TVS DIODE 33VWM 53.3VC SMA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 7.5A
Capacitance @ Frequency: 375pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 33VWM 53.3VC SMA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 7.5A
Capacitance @ Frequency: 375pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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| 1SS383T1G |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 40V 300MA SC-82
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SC-82
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 300MA SC-82
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SC-82
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
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| MAC4DSMT4 |
|
Виробник: onsemi
Description: TRIAC SENS GATE 600V 4A DPAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 40A @ 60Hz
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Hold (Ih) (Max): 15 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Logic - Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: TRIAC SENS GATE 600V 4A DPAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 40A @ 60Hz
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Hold (Ih) (Max): 15 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Logic - Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| MBRB4030T4 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 40A D2PAK
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 40A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 40A D2PAK
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 40A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 800 шт
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| MM3Z18VST1 |
|
Виробник: onsemi
Description: DIODE ZENER 18V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Obsolete
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Description: DIODE ZENER 18V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Obsolete
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
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Мінімальне замовлення: 27000 шт
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| MRS1504T3 |
|
Виробник: onsemi
Description: DIODE GEN PURP 400V 1.5A SMB
Supplier Device Package: SMB
Current - Average Rectified (Io): 1.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE GEN PURP 400V 1.5A SMB
Supplier Device Package: SMB
Current - Average Rectified (Io): 1.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
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| MURB1660CTT4 |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 8A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 600V 8A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 800 шт
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| MURHB860CTT4 |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 600V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 800 шт
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| NSBA114TDXV6T1 |
|
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Description: TRANS 2PNP PREBIAS 0.5W SOT563
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| NSBC123JDXV6T1 |
|
Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4000 шт
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| NSBC123JPDXV6T1 |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN/PNP SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4000 шт
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| SMF5.0AT1 |
|
Виробник: onsemi
Description: TVS DIODE 5VWM 9.2VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5VWM 9.2VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Obsolete
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| MAC15SM |
Виробник: onsemi
Description: TRIAC SENS GATE 600V 15A TO220
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 15 A
Part Status: Obsolete
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Hold (Ih) (Max): 10 mA
Operating Temperature: -40°C ~ 110°C (TJ)
Configuration: Single
Triac Type: Logic - Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRIAC SENS GATE 600V 15A TO220
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 15 A
Part Status: Obsolete
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Hold (Ih) (Max): 10 mA
Operating Temperature: -40°C ~ 110°C (TJ)
Configuration: Single
Triac Type: Logic - Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| MCR8SM |
|
Виробник: onsemi
Description: SCR 600V 8A TO220AB
Description: SCR 600V 8A TO220AB
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| MSR860 |
|
Виробник: onsemi
Description: DIODE STANDARD 600V 8A TO2202
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 600V 8A TO2202
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 50 шт
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| MAC16CN |
|
Виробник: onsemi
Description: TRIAC 800V 16A TO220
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 16 A
Part Status: Obsolete
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 150A @ 60Hz
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRIAC 800V 16A TO220
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 16 A
Part Status: Obsolete
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 150A @ 60Hz
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Мінімальне замовлення: 50 шт
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| MAC4DCN-001 |
|
Виробник: onsemi
Description: TRIAC 800V 4A IPAK
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: IPAK
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 40A @ 60Hz
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 35 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: TRIAC 800V 4A IPAK
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: IPAK
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 40A @ 60Hz
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 35 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| MAC8SM |
|
Виробник: onsemi
Description: TRIAC SENS GATE 600V 8A TO220AB
Description: TRIAC SENS GATE 600V 8A TO220AB
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| MBR2515L |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 15V 25A TO220-2
Current - Reverse Leakage @ Vr: 15 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 15 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 25A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SCHOTTKY 15V 25A TO220-2
Current - Reverse Leakage @ Vr: 15 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 15 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 25A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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| MCR12LD |
Виробник: onsemi
Description: SCR 400V 12A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: TO-220
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 2.2 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 8 mA
Current - Hold (Ih) (Max): 20 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Through Hole
Description: SCR 400V 12A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: TO-220
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 2.2 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 8 mA
Current - Hold (Ih) (Max): 20 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Through Hole
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| MSR1560 |
|
Виробник: onsemi
Description: DIODE STANDARD 600V 15A TO2202
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 600V 15A TO2202
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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| 1SMA33AT3 |
|
Виробник: onsemi
Description: TVS DIODE 33VWM 53.3VC SMA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 7.5A
Capacitance @ Frequency: 375pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: TVS DIODE 33VWM 53.3VC SMA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 7.5A
Capacitance @ Frequency: 375pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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| MCR12DSMT4 |
|
Виробник: onsemi
Description: THYRISTOR SCR 12A 600V DPAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 6 mA
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: THYRISTOR SCR 12A 600V DPAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 6 mA
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| MCR716T4 |
|
Виробник: onsemi
Description: THYRISTOR SCR 4A 400V DPAK
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 2.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A @ 60Hz
Current - Gate Trigger (Igt) (Max): 75 µA
Current - Hold (Ih) (Max): 5 mA
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: THYRISTOR SCR 4A 400V DPAK
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 2.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A @ 60Hz
Current - Gate Trigger (Igt) (Max): 75 µA
Current - Hold (Ih) (Max): 5 mA
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| MRS1504T3 |
|
Виробник: onsemi
Description: DIODE GEN PURP 400V 1.5A SMB
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 400V 1.5A SMB
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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| MURHB860CTT4 |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 600V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| NSBA114TDXV6T1 |
|
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Description: TRANS 2PNP PREBIAS 0.5W SOT563
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| NSBC123JPDXV6T1 |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Description: TRANS PREBIAS NPN/PNP SOT563
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
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| RB520S30T1 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 200MA 30V SOD523
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: DIODE SCHOTTKY 200MA 30V SOD523
Packaging: Cut Tape (CT)
Part Status: Obsolete
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| BZX84C3V3ET1 |
|
Виробник: onsemi
Description: DIODE ZENER 3.3V 225MW SOT23-3
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 3.3V 225MW SOT23-3
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6%
Packaging: Cut Tape (CT)
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| EMC2DXV5T1 |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT553
Part Status: Obsolete
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Description: TRANS PREBIAS NPN/PNP SOT553
Part Status: Obsolete
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
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| NSBC124EPDXV6T1 |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
Supplier Device Package: SOT-563
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Description: TRANS PREBIAS NPN/PNP SOT563
Supplier Device Package: SOT-563
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
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| NZL5V6AXV3T1 |
|
Виробник: onsemi
Description: TVS DIODE 3VWM 7VC SC89-3
Power Line Protection: No
Power - Peak Pulse: 50W
Voltage - Clamping (Max) @ Ipp: 7V
Voltage - Breakdown (Min): 5.32V
Unidirectional Channels: 2
Supplier Device Package: SC-89-3
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 10.1A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Description: TVS DIODE 3VWM 7VC SC89-3
Power Line Protection: No
Power - Peak Pulse: 50W
Voltage - Clamping (Max) @ Ipp: 7V
Voltage - Breakdown (Min): 5.32V
Unidirectional Channels: 2
Supplier Device Package: SC-89-3
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 10.1A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
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| NTJD1155LT1G |
|
Виробник: onsemi
Description: MOSFET N/P-CH 8V 1.3A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: MOSFET N/P-CH 8V 1.3A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
на замовлення 53250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.05 грн |
| 6000+ | 5.28 грн |
| NTS4101PT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 1.37A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 329mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
Description: MOSFET P-CH 20V 1.37A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 329mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
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Мінімальне замовлення: 3000 шт
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| NTJD1155LT1G |
|
Виробник: onsemi
Description: MOSFET N/P-CH 8V 1.3A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: MOSFET N/P-CH 8V 1.3A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
на замовлення 53758 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.02 грн |
| 17+ | 17.72 грн |
| 100+ | 11.17 грн |
| 500+ | 7.81 грн |
| 1000+ | 6.95 грн |
| NTS4101PT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 1.37A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 329mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
Description: MOSFET P-CH 20V 1.37A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 329mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
на замовлення 2073 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.48 грн |
| 19+ | 16.46 грн |
| 100+ | 10.35 грн |
| 500+ | 7.23 грн |
| 1000+ | 6.42 грн |
| MC74VHC4052DR2 |
|
Виробник: onsemi
Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 95MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 80pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 95MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 80pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
товару немає в наявності
В кошику
од. на суму грн.
| NLAS4684MNR2 |
|
Виробник: onsemi
Description: IC SWITCH SPDT X 2 800MOHM 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-DFN (3x3)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 800MOHM 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-DFN (3x3)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAT54XV2T1 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR120ESFT1 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.