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NTJD4401NT1G NTJD4401NT1G onsemi ntjd4401n-d.pdf Description: MOSFET 2N-CH 20V 0.63A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 4811 шт:
термін постачання 21-31 дні (днів)
10+33.23 грн
16+19.66 грн
100+12.40 грн
500+8.71 грн
1000+7.76 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
NTS4001NT1G NTS4001NT1G onsemi nts4001n-d.pdf Description: MOSFET N-CH 30V 270MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 5 V
на замовлення 1573 шт:
термін постачання 21-31 дні (днів)
12+28.48 грн
19+16.76 грн
100+10.55 грн
500+7.37 грн
1000+6.55 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
NTA4001NT1G NTA4001NT1G onsemi nta4001n-d.pdf Description: MOSFET N-CH 20V 238MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
на замовлення 36053 шт:
термін постачання 21-31 дні (днів)
19+17.41 грн
30+10.29 грн
100+6.35 грн
500+4.37 грн
1000+3.85 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
NTA4151PT1G NTA4151PT1G onsemi nta4151p-d.pdf Description: MOSFET P-CH 20V 760MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-75, SOT-416
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 301mW (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 94875 шт:
термін постачання 21-31 дні (днів)
20+16.61 грн
29+10.74 грн
100+6.31 грн
500+5.15 грн
1000+4.83 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
NTE4151PT1G NTE4151PT1G onsemi nta4151p-d.pdf Description: MOSFET P-CH 20V 760MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 313mW (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
на замовлення 81932 шт:
термін постачання 21-31 дні (днів)
12+26.90 грн
18+17.60 грн
100+11.88 грн
500+8.63 грн
1000+7.80 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
NTA4153NT1G NTA4153NT1G onsemi nta4153n-d.pdf description Description: MOSFET N-CH 20V 915MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
на замовлення 164351 шт:
термін постачання 21-31 дні (днів)
17+18.99 грн
28+11.12 грн
100+6.92 грн
500+4.77 грн
1000+4.21 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
NTE4153NT1G NTE4153NT1G onsemi nta4153n-d.pdf Description: MOSFET N-CH 20V 915MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
на замовлення 113013 шт:
термін постачання 21-31 дні (днів)
15+21.36 грн
22+13.94 грн
100+9.38 грн
500+6.78 грн
1000+6.11 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
NTGS4111PT1G NTGS4111PT1G onsemi ntgs4111p-d.pdf Description: MOSFET P-CH 30V 2.6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
на замовлення 16015 шт:
термін постачання 21-31 дні (днів)
6+59.34 грн
10+35.43 грн
100+22.91 грн
500+16.44 грн
1000+14.81 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
NTHD3100CT1G NTHD3100CT1G onsemi nthd3100c-d.pdf Description: MOSFET N/P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
на замовлення 16649 шт:
термін постачання 21-31 дні (днів)
3+112.35 грн
10+68.34 грн
100+45.58 грн
500+33.60 грн
1000+30.65 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTHD4401PT3G NTHD4401PT3G onsemi nthd4401p-d.pdf Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
NTHD4502NT1G NTHD4502NT1G onsemi nthd4502n-d.pdf Description: MOSFET 2N-CH 30V 2.2A CHIPFET
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 640mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V
товару немає в наявності
В кошику  од. на суму  грн.
NTHD4508NT1G NTHD4508NT1G onsemi nthd4508n-d.pdf Description: MOSFET 2N-CH 20V 3A CHIPFET
Part Status: Active
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.13W
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику  од. на суму  грн.
NTJD4152PT1G NTJD4152PT1G onsemi ntjd4152p-d.pdf Description: MOSFET 2P-CH 20V 0.88A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
на замовлення 65346 шт:
термін постачання 21-31 дні (днів)
11+29.27 грн
18+17.37 грн
100+10.92 грн
500+7.63 грн
1000+6.79 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
NTJS3151PT1G NTJS3151PT1G onsemi ntjs3151p-d.pdf Description: MOSFET P-CH 12V 2.7A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 625mW (Ta)
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
8+41.14 грн
10+32.15 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
NTJS4151PT1 NTJS4151PT1 onsemi ntjs4151p-d.pdf Description: MOSFET P-CH 20V 3.3A SOT-363
Part Status: Obsolete
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
NTJS4405NT1G NTJS4405NT1G onsemi ntjs4405n-d.pdf Description: MOSFET N-CH 25V 1A SC88/SC70-6
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 630mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
NTQD4154ZR2 NTQD4154ZR2 onsemi NTQD4154Z-D.pdf Description: MOSFET 2N-CH 20V 7.5A 8-TSSOP
товару немає в наявності
В кошику  од. на суму  грн.
NTR2101PT1G NTR2101PT1G onsemi ntr2101p-d.pdf Description: MOSFET P-CH 8V SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 10007 шт:
термін постачання 21-31 дні (днів)
9+37.98 грн
14+22.55 грн
100+14.35 грн
500+10.12 грн
1000+9.04 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
NTR4101PT1G NTR4101PT1G onsemi ntr4101p-d.pdf Description: MOSFET P-CH 20V 1.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
на замовлення 132570 шт:
термін постачання 21-31 дні (днів)
11+30.06 грн
17+18.06 грн
100+11.40 грн
500+7.98 грн
1000+7.10 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
NTR4501NT1G NTR4501NT1G onsemi ntr4501n-d.pdf Description: MOSFET N-CH 20V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
на замовлення 186067 шт:
термін постачання 21-31 дні (днів)
11+30.86 грн
17+18.44 грн
100+11.64 грн
500+8.16 грн
1000+7.26 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
NTR4503NT1G NTR4503NT1G onsemi ntr4503n-d.pdf Description: MOSFET N-CH 30V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V
на замовлення 20900 шт:
термін постачання 21-31 дні (днів)
9+37.18 грн
14+22.09 грн
100+14.09 грн
500+9.96 грн
1000+8.91 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
NTS2101PT1G NTS2101PT1G onsemi nts2101p-d.pdf Description: MOSFET P-CH 8V 1.4A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 8 V
на замовлення 45895 шт:
термін постачання 21-31 дні (днів)
9+38.77 грн
14+23.08 грн
100+14.68 грн
500+10.36 грн
1000+9.26 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
NTZD3152PT1G NTZD3152PT1G onsemi ntzd3152p-d.pdf Description: MOSFET 2P-CH 20V 0.43A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 13894 шт:
термін постачання 21-31 дні (днів)
13+25.32 грн
20+15.24 грн
100+9.54 грн
500+6.64 грн
1000+5.89 грн
2000+5.26 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
NTZD3154NT1G NTZD3154NT1G onsemi ntzd3154n-d.pdf Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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NTZD3155CT1G NTZD3155CT1G onsemi ntzd3155c-d.pdf Description: MOSFET N/P-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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NTZS3151PT1G NTZS3151PT1G onsemi ntzs3151p-d.pdf Description: MOSFET P-CH 20V 860MA SOT563
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 170mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 17645 шт:
термін постачання 21-31 дні (днів)
13+26.11 грн
16+19.73 грн
100+11.85 грн
500+10.30 грн
1000+7.01 грн
2000+6.45 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
MAC212A10 MAC212A10 onsemi MAC212A8_10.pdf Description: TRIAC 800V 12A TO220AB
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Obsolete
Supplier Device Package: TO-220AB
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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1SMA33AT3 1SMA33AT3 onsemi 1_SZ1_SMAxxAT3G_Series.pdf Description: TVS DIODE 33VWM 53.3VC SMA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 7.5A
Capacitance @ Frequency: 375pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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1SS383T1G 1SS383T1G onsemi 1SS383T1G%20Rev2.pdf Description: DIODE ARR SCHOTT 40V 300MA SC-82
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SC-82
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
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MAC4DSMT4 MAC4DSMT4 onsemi MAC4DSM_SN.pdf Description: TRIAC SENS GATE 600V 4A DPAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 40A @ 60Hz
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Hold (Ih) (Max): 15 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Logic - Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
MBRB4030T4 MBRB4030T4 onsemi MBRB4030-D.pdf Description: DIODE SCHOTTKY 30V 40A D2PAK
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 40A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MM3Z18VST1 MM3Z18VST1 onsemi MM3ZxxxST1%2CST3.pdf Description: DIODE ZENER 18V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Obsolete
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
товару немає в наявності
 Мінімальне замовлення: 27000 шт
В кошику  од. на суму  грн.
MRS1504T3 MRS1504T3 onsemi mrs1504t3-d.pdf Description: DIODE GEN PURP 400V 1.5A SMB
Supplier Device Package: SMB
Current - Average Rectified (Io): 1.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
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MURB1660CTT4 MURB1660CTT4 onsemi murb1660ct-d.pdf Description: DIODE ARRAY GP 600V 8A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MURHB860CTT4 MURHB860CTT4 onsemi murhb860ct-d.pdf Description: DIODE ARRAY GP 600V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NSBA114TDXV6T1 NSBA114TDXV6T1 onsemi NSBA114EDXV6-D.pdf Description: TRANS 2PNP PREBIAS 0.5W SOT563
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NSBC123JDXV6T1 NSBC123JDXV6T1 onsemi NSBC114EDXV6Tx.pdf Description: TRANS 2NPN PREBIAS 0.5W SOT563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC123JPDXV6T1 NSBC123JPDXV6T1 onsemi NSBC114EPDXV6T1%2C5_Series.pdf Description: TRANS PREBIAS NPN/PNP SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
SMF5.0AT1 SMF5.0AT1 onsemi SMF5.0AT1%20Series.pdf Description: TVS DIODE 5VWM 9.2VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Obsolete
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MAC15SM MAC15SM onsemi Description: TRIAC SENS GATE 600V 15A TO220
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 15 A
Part Status: Obsolete
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Hold (Ih) (Max): 10 mA
Operating Temperature: -40°C ~ 110°C (TJ)
Configuration: Single
Triac Type: Logic - Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MCR8SM MCR8SM onsemi MCR8SDG_MG_NG.pdf Description: SCR 600V 8A TO220AB
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MSR860 MSR860 onsemi msr860-d.pdf Description: DIODE STANDARD 600V 8A TO2202
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
MAC16CN MAC16CN onsemi MAC16CMG_NG.pdf Description: TRIAC 800V 16A TO220
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 16 A
Part Status: Obsolete
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 150A @ 60Hz
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
MAC4DCN-001 MAC4DCN-001 onsemi MAC4DCM_CN.pdf Description: TRIAC 800V 4A IPAK
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: IPAK
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 40A @ 60Hz
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 35 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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MAC8SM MAC8SM onsemi MAC8SDG_MG_NG.pdf Description: TRIAC SENS GATE 600V 8A TO220AB
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MBR2515L MBR2515L onsemi mbr2515l-d.pdf Description: DIODE SCHOTTKY 15V 25A TO220-2
Current - Reverse Leakage @ Vr: 15 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 15 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 25A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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MCR12LD MCR12LD onsemi Description: SCR 400V 12A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: TO-220
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 2.2 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 8 mA
Current - Hold (Ih) (Max): 20 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Through Hole
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MSR1560 MSR1560 onsemi msr1560-d.pdf Description: DIODE STANDARD 600V 15A TO2202
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
1SMA33AT3 1SMA33AT3 onsemi 1_SZ1_SMAxxAT3G_Series.pdf Description: TVS DIODE 33VWM 53.3VC SMA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 7.5A
Capacitance @ Frequency: 375pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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MCR12DSMT4 MCR12DSMT4 onsemi MCR12DSM_N.pdf Description: THYRISTOR SCR 12A 600V DPAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 6 mA
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MCR716T4 MCR716T4 onsemi MCR716_718.pdf Description: THYRISTOR SCR 4A 400V DPAK
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 2.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A @ 60Hz
Current - Gate Trigger (Igt) (Max): 75 µA
Current - Hold (Ih) (Max): 5 mA
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
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MRS1504T3 MRS1504T3 onsemi mrs1504t3-d.pdf Description: DIODE GEN PURP 400V 1.5A SMB
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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MURHB860CTT4 MURHB860CTT4 onsemi murhb860ct-d.pdf Description: DIODE ARRAY GP 600V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
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NSBA114TDXV6T1 NSBA114TDXV6T1 onsemi NSBA114EDXV6-D.pdf Description: TRANS 2PNP PREBIAS 0.5W SOT563
товару немає в наявності
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NSBC123JPDXV6T1 NSBC123JPDXV6T1 onsemi NSBC114EPDXV6T1%2C5_Series.pdf Description: TRANS PREBIAS NPN/PNP SOT563
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
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NSBC144EPDXV6T1 NSBC144EPDXV6T1 onsemi NSBC114EPDXV6T1%2C5_Series.pdf Description: TRANS BR NPN/PNP DUAL 50V SOT563
Packaging: Cut Tape (CT)
товару немає в наявності
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RB520S30T1 RB520S30T1 onsemi NEXP-S-A0002882736-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 200MA 30V SOD523
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BZX84C3V3ET1 BZX84C3V3ET1 onsemi BZX84C2V4ET1-D.pdf Description: DIODE ZENER 3.3V 225MW SOT23-3
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6%
Packaging: Cut Tape (CT)
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EMC2DXV5T1 EMC2DXV5T1 onsemi emc2dxv5t1-d.pdf Description: TRANS PREBIAS NPN/PNP SOT553
Part Status: Obsolete
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
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NSBC124EPDXV6T1 NSBC124EPDXV6T1 onsemi NSBC114EPDXV6T1%2C5_Series.pdf Description: TRANS PREBIAS NPN/PNP SOT563
Supplier Device Package: SOT-563
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
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NTJD4401NT1G ntjd4401n-d.pdf
NTJD4401NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.63A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 4811 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.23 грн
16+19.66 грн
100+12.40 грн
500+8.71 грн
1000+7.76 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
NTS4001NT1G nts4001n-d.pdf
NTS4001NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 270MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 5 V
на замовлення 1573 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+28.48 грн
19+16.76 грн
100+10.55 грн
500+7.37 грн
1000+6.55 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
NTA4001NT1G nta4001n-d.pdf
NTA4001NT1G
Виробник: onsemi
Description: MOSFET N-CH 20V 238MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
на замовлення 36053 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+17.41 грн
30+10.29 грн
100+6.35 грн
500+4.37 грн
1000+3.85 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
NTA4151PT1G nta4151p-d.pdf
NTA4151PT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 760MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-75, SOT-416
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 301mW (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 94875 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+16.61 грн
29+10.74 грн
100+6.31 грн
500+5.15 грн
1000+4.83 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
NTE4151PT1G nta4151p-d.pdf
NTE4151PT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 760MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 313mW (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
на замовлення 81932 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+26.90 грн
18+17.60 грн
100+11.88 грн
500+8.63 грн
1000+7.80 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
NTA4153NT1G description nta4153n-d.pdf
NTA4153NT1G
Виробник: onsemi
Description: MOSFET N-CH 20V 915MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
на замовлення 164351 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+18.99 грн
28+11.12 грн
100+6.92 грн
500+4.77 грн
1000+4.21 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
NTE4153NT1G nta4153n-d.pdf
NTE4153NT1G
Виробник: onsemi
Description: MOSFET N-CH 20V 915MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
на замовлення 113013 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.36 грн
22+13.94 грн
100+9.38 грн
500+6.78 грн
1000+6.11 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
NTGS4111PT1G ntgs4111p-d.pdf
NTGS4111PT1G
Виробник: onsemi
Description: MOSFET P-CH 30V 2.6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
на замовлення 16015 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.34 грн
10+35.43 грн
100+22.91 грн
500+16.44 грн
1000+14.81 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
NTHD3100CT1G nthd3100c-d.pdf
NTHD3100CT1G
Виробник: onsemi
Description: MOSFET N/P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
на замовлення 16649 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.35 грн
10+68.34 грн
100+45.58 грн
500+33.60 грн
1000+30.65 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTHD4401PT3G nthd4401p-d.pdf
NTHD4401PT3G
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
товару немає в наявності
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NTHD4502NT1G nthd4502n-d.pdf
NTHD4502NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 2.2A CHIPFET
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 640mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V
товару немає в наявності
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NTHD4508NT1G nthd4508n-d.pdf
NTHD4508NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 20V 3A CHIPFET
Part Status: Active
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.13W
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
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NTJD4152PT1G ntjd4152p-d.pdf
NTJD4152PT1G
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.88A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
на замовлення 65346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.27 грн
18+17.37 грн
100+10.92 грн
500+7.63 грн
1000+6.79 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
NTJS3151PT1G ntjs3151p-d.pdf
NTJS3151PT1G
Виробник: onsemi
Description: MOSFET P-CH 12V 2.7A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 625mW (Ta)
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.14 грн
10+32.15 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
NTJS4151PT1 ntjs4151p-d.pdf
NTJS4151PT1
Виробник: onsemi
Description: MOSFET P-CH 20V 3.3A SOT-363
Part Status: Obsolete
Packaging: Cut Tape (CT)
товару немає в наявності
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NTJS4405NT1G ntjs4405n-d.pdf
NTJS4405NT1G
Виробник: onsemi
Description: MOSFET N-CH 25V 1A SC88/SC70-6
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 630mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Active
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NTQD4154ZR2 NTQD4154Z-D.pdf
NTQD4154ZR2
Виробник: onsemi
Description: MOSFET 2N-CH 20V 7.5A 8-TSSOP
товару немає в наявності
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NTR2101PT1G ntr2101p-d.pdf
NTR2101PT1G
Виробник: onsemi
Description: MOSFET P-CH 8V SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 10007 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.98 грн
14+22.55 грн
100+14.35 грн
500+10.12 грн
1000+9.04 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
NTR4101PT1G ntr4101p-d.pdf
NTR4101PT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 1.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
на замовлення 132570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.06 грн
17+18.06 грн
100+11.40 грн
500+7.98 грн
1000+7.10 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
NTR4501NT1G ntr4501n-d.pdf
NTR4501NT1G
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
на замовлення 186067 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.86 грн
17+18.44 грн
100+11.64 грн
500+8.16 грн
1000+7.26 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
NTR4503NT1G ntr4503n-d.pdf
NTR4503NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V
на замовлення 20900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.18 грн
14+22.09 грн
100+14.09 грн
500+9.96 грн
1000+8.91 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
NTS2101PT1G nts2101p-d.pdf
NTS2101PT1G
Виробник: onsemi
Description: MOSFET P-CH 8V 1.4A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 8 V
на замовлення 45895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.77 грн
14+23.08 грн
100+14.68 грн
500+10.36 грн
1000+9.26 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
NTZD3152PT1G ntzd3152p-d.pdf
NTZD3152PT1G
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.43A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 13894 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.32 грн
20+15.24 грн
100+9.54 грн
500+6.64 грн
1000+5.89 грн
2000+5.26 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
NTZD3154NT1G ntzd3154n-d.pdf
NTZD3154NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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NTZD3155CT1G ntzd3155c-d.pdf
NTZD3155CT1G
Виробник: onsemi
Description: MOSFET N/P-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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NTZS3151PT1G ntzs3151p-d.pdf
NTZS3151PT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 860MA SOT563
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 170mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 17645 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.11 грн
16+19.73 грн
100+11.85 грн
500+10.30 грн
1000+7.01 грн
2000+6.45 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
MAC212A10 MAC212A8_10.pdf
MAC212A10
Виробник: onsemi
Description: TRIAC 800V 12A TO220AB
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Obsolete
Supplier Device Package: TO-220AB
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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1SMA33AT3 1_SZ1_SMAxxAT3G_Series.pdf
1SMA33AT3
Виробник: onsemi
Description: TVS DIODE 33VWM 53.3VC SMA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 7.5A
Capacitance @ Frequency: 375pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
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1SS383T1G 1SS383T1G%20Rev2.pdf
1SS383T1G
Виробник: onsemi
Description: DIODE ARR SCHOTT 40V 300MA SC-82
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SC-82
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
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MAC4DSMT4 MAC4DSM_SN.pdf
MAC4DSMT4
Виробник: onsemi
Description: TRIAC SENS GATE 600V 4A DPAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 40A @ 60Hz
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Hold (Ih) (Max): 15 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Logic - Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
MBRB4030T4 MBRB4030-D.pdf
MBRB4030T4
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 40A D2PAK
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 40A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MM3Z18VST1 MM3ZxxxST1%2CST3.pdf
MM3Z18VST1
Виробник: onsemi
Description: DIODE ZENER 18V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Obsolete
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
товару немає в наявності
Мінімальне замовлення: 27000 шт
В кошику  од. на суму  грн.
MRS1504T3 mrs1504t3-d.pdf
MRS1504T3
Виробник: onsemi
Description: DIODE GEN PURP 400V 1.5A SMB
Supplier Device Package: SMB
Current - Average Rectified (Io): 1.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
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MURB1660CTT4 murb1660ct-d.pdf
MURB1660CTT4
Виробник: onsemi
Description: DIODE ARRAY GP 600V 8A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MURHB860CTT4 murhb860ct-d.pdf
MURHB860CTT4
Виробник: onsemi
Description: DIODE ARRAY GP 600V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NSBA114TDXV6T1 NSBA114EDXV6-D.pdf
NSBA114TDXV6T1
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
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NSBC123JDXV6T1 NSBC114EDXV6Tx.pdf
NSBC123JDXV6T1
Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC123JPDXV6T1 NSBC114EPDXV6T1%2C5_Series.pdf
NSBC123JPDXV6T1
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
SMF5.0AT1 SMF5.0AT1%20Series.pdf
SMF5.0AT1
Виробник: onsemi
Description: TVS DIODE 5VWM 9.2VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Obsolete
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MAC15SM
MAC15SM
Виробник: onsemi
Description: TRIAC SENS GATE 600V 15A TO220
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 15 A
Part Status: Obsolete
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Hold (Ih) (Max): 10 mA
Operating Temperature: -40°C ~ 110°C (TJ)
Configuration: Single
Triac Type: Logic - Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MCR8SM MCR8SDG_MG_NG.pdf
MCR8SM
Виробник: onsemi
Description: SCR 600V 8A TO220AB
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MSR860 msr860-d.pdf
MSR860
Виробник: onsemi
Description: DIODE STANDARD 600V 8A TO2202
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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MAC16CN MAC16CMG_NG.pdf
MAC16CN
Виробник: onsemi
Description: TRIAC 800V 16A TO220
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 16 A
Part Status: Obsolete
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 150A @ 60Hz
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MAC4DCN-001 MAC4DCM_CN.pdf
MAC4DCN-001
Виробник: onsemi
Description: TRIAC 800V 4A IPAK
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: IPAK
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 40A @ 60Hz
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 35 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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MAC8SM MAC8SDG_MG_NG.pdf
MAC8SM
Виробник: onsemi
Description: TRIAC SENS GATE 600V 8A TO220AB
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MBR2515L mbr2515l-d.pdf
MBR2515L
Виробник: onsemi
Description: DIODE SCHOTTKY 15V 25A TO220-2
Current - Reverse Leakage @ Vr: 15 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 15 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 25A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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MCR12LD
MCR12LD
Виробник: onsemi
Description: SCR 400V 12A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: TO-220
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 2.2 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 8 mA
Current - Hold (Ih) (Max): 20 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Through Hole
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MSR1560 msr1560-d.pdf
MSR1560
Виробник: onsemi
Description: DIODE STANDARD 600V 15A TO2202
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Мінімальне замовлення: 50 шт
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1SMA33AT3 1_SZ1_SMAxxAT3G_Series.pdf
1SMA33AT3
Виробник: onsemi
Description: TVS DIODE 33VWM 53.3VC SMA
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 7.5A
Capacitance @ Frequency: 375pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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MCR12DSMT4 MCR12DSM_N.pdf
MCR12DSMT4
Виробник: onsemi
Description: THYRISTOR SCR 12A 600V DPAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 6 mA
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MCR716T4 MCR716_718.pdf
MCR716T4
Виробник: onsemi
Description: THYRISTOR SCR 4A 400V DPAK
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 4 A
Supplier Device Package: DPAK
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 2.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A @ 60Hz
Current - Gate Trigger (Igt) (Max): 75 µA
Current - Hold (Ih) (Max): 5 mA
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MRS1504T3 mrs1504t3-d.pdf
MRS1504T3
Виробник: onsemi
Description: DIODE GEN PURP 400V 1.5A SMB
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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MURHB860CTT4 murhb860ct-d.pdf
MURHB860CTT4
Виробник: onsemi
Description: DIODE ARRAY GP 600V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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NSBA114TDXV6T1 NSBA114EDXV6-D.pdf
NSBA114TDXV6T1
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
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NSBC123JPDXV6T1 NSBC114EPDXV6T1%2C5_Series.pdf
NSBC123JPDXV6T1
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
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NSBC144EPDXV6T1 NSBC114EPDXV6T1%2C5_Series.pdf
NSBC144EPDXV6T1
Виробник: onsemi
Description: TRANS BR NPN/PNP DUAL 50V SOT563
Packaging: Cut Tape (CT)
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RB520S30T1 NEXP-S-A0002882736-1.pdf?t.download=true&u=5oefqw
RB520S30T1
Виробник: onsemi
Description: DIODE SCHOTTKY 200MA 30V SOD523
Packaging: Cut Tape (CT)
Part Status: Obsolete
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BZX84C3V3ET1 BZX84C2V4ET1-D.pdf
BZX84C3V3ET1
Виробник: onsemi
Description: DIODE ZENER 3.3V 225MW SOT23-3
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6%
Packaging: Cut Tape (CT)
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EMC2DXV5T1 emc2dxv5t1-d.pdf
EMC2DXV5T1
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT553
Part Status: Obsolete
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
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NSBC124EPDXV6T1 NSBC114EPDXV6T1%2C5_Series.pdf
NSBC124EPDXV6T1
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
Supplier Device Package: SOT-563
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
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